• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A process for the wet chemical treatment of semiconductor wafers, in which the semiconductor wafers are treated with treatment liquids, has the semiconductor wafers firstly treated with an aqueous HF solution, then treated with an aqueous O3 solution and finally treated with water or an aqueous HCl solution, these treatments forming a treatment sequence.
    公开号:US20010003680A1
    申请号:US09/425,694
    申请日:1999-10-22
    公开日:2001-06-14
    发明作者:Roland Brunner；Helmut Schwenk；Johann Zach
    申请人:Wacker Siltronic AG；
    IPC主号:H01L21-02052
    专利说明:
    [0001] 1. Field of the Invention [0001]
    [0002] The present invention relates to a process for the wet chemical treatment of semiconductor wafers, in which the semiconductor wafers are treated with treatment liquids, in particular a process for the cleaning of silicon semiconductor wafers. [0002]
    [0003] 2. The Prior Art [0003]
    [0004] A treatment process of this type has been described, for example, by M. Meuris et al. in [0004] Solid State Technology, July 1995, p. 109. SUMMARY OF THE INVENTION
    [0005] It is an object of the present invention to provide a process by which metallic impurities and particles can be removed particularly effectively from semiconductor wafers. [0005]
    [0006] The above object is achieved according to the present invention by providing a process for the wet chemical treatment of semiconductor wafers, in which the semiconductor wafers are treated with treatment liquids, wherein the semiconductor wafers are firstly treated with an aqueous HF solution, then with an aqueous O[0006] 3 solution and finally with water or an aqueous HCl solution, these treatments forming a treatment sequence.
    [0007] It has been found that the object is achieved by this treatment sequence, which does not need to be interrupted by rinsing with water or another treatment liquid and is carried out exclusively at a pH which is lower than pH 7. The treatment according to the invention with the treatment liquids indicated is performed in treatment baths. It is preferable to circulate the treatment liquid, that is to take some of this liquid from the corresponding treatment bath and return it back after having been filtered. This saves on outlay for the required chemicals and for deionized water. The addition of fresh water or other liquids to the treatment baths is to be avoided since, when valves are opened, pressure impulses are created and particles can be introduced into the treatment baths. The treatment according to the invention is therefore different from a rinsing treatment, in which fresh treatment liquid is supplied continuously or at intervals. [0007]
    [0008] The treatments include treating the semiconductor wafers firstly in a bath with an aqueous HF solution, then in a bath with an aqueous O[0008] 3 solution and finally in a bath with water or an aqueous HCl solution, form a treatment sequence B2 Sequence B2 may be preceded by a treatment B1 of the semiconductor wafers in a bath with an aqueous SC1 solution. An SC1 solution contains NH4OH and H2O2 or TMAH (= tetramethylammonium hydroxide) and H2O2 is preferred. The treatment sequence B2 may also be followed by a treatment B3 of drying the semiconductor wafers. The drying treatment is preferably carried out using the centrifugal, hot water, isopropanol or marangoni principle.
    [0009] It is particularly preferable to arrange the sequencing of the treatment of the semiconductor wafers according to the term m*(B[0009] 1+B2)+ B3, with m being an integer number. The treatment B1 and the treatment sequence B2 are carried out in succession, and this takes place m times, before the drying treatment B3 is performed.
    [0010] The aqueous HF solution used in the treatment sequence B[0010] 2 preferably contains HF in a concentration of from 0.001% to 2% by weight and optionally HCl in a concentration of up to 2% by weight and optionally a surfactant. A mixture of alkylbenzenesulfonate and fatty amine polyglycol ethers in a concentration of 0.001% to 2% by weight is particularly preferred as a surfactant additive. The aqueous O3 solution used in the treatment sequence B2 preferably contains O3 in a concentration of from 1 to 30 ppm and optionally HF in a concentration of from 0.0001% to 2% by weight and is optionally exposed to megasonic waves. The liquid used last in the treatment sequence B2 is water or an aqueous HCl solution, which preferably contains HCl in a concentration of from 0.001% to 10% by weight. The liquid may optionally contain O3 and optionally be exposed to megasonic waves. The temperature of the bath is preferably at a temperature of from room temperature to 80° C.
    [0011] All percents by weight are based upon the total solution weight. [0011]
    [0012] Other objects and features of the present invention will become apparent from the following detailed description considered in connection with the accompanying examples which disclose embodiments of the present invention. It should be understood, however, that the examples are designed for the purpose of illustration only and not as a definition of the limits of the invention. [0012] DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
    [0013] The comparison below of an invention example with comparative examples shows the advantageous effect of the present invention. [0013]
    [0014] The table contains the results (3 sigma values) of conventional counts of particles of specific size (LPD= light point defects), which were in each case carried out on 20 polished semiconductor wafers after a wet chemical treatment sequence and drying which was the same for all the semiconductor wafers. [0014]
    [0015] The example (B) comprised the treatment sequence: HF bath, deionized water/ozone bath, HCl bath with megasonic exposure. [0015]
    [0016] Comparative Example 1 (C1) comprised the treatment sequence: HF bath, deionized water/ozone bath, rinsing with deionized water outside the bath. [0016]
    [0017] Comparative Example 2 (C2) comprised the treatment sequence: HF bath, deionized water/ozone bath with subsequent rinsing using deionized water in the bath and megasonic exposure. [0017]NumberLPD (μM) >0.3 >0.2 >0.16 >0.12 B 3 7 30 480 C1 4 13 50 550 C2 10 50 140 550
    [0018] Accordingly, while a few embodiments of the present invention have been shown and described, it is to be understood that many changes and modifications may be made thereunto without departing from the spirit and scope of the invention as defined in the appended claims. [0018]
    权利要求:
    Claims (10)
    [1" id="US-20010003680-A1-CLM-00001] 1. A process for the wet chemical treatment of semiconductor wafers with treatment liquids, comprising the steps of
    firstly treating the semiconductor wafers with an aqueous HF solution;
    then treating the semiconductor wafers with an aqueous O3 solution; and
    then treating the semiconductor wafers with a liquid selected from the group consisting of water and an aqueous HCl solution;
    whereby these treatment steps forming a treatment sequence B2.
    [2" id="US-20010003680-A1-CLM-00002] 2. The process as claimed in
    claim 1 ,
    wherein the treatment sequence B2 is preceded by a treatment B1 of the semiconductor wafers with an aqueous SC1 solution.
    [3" id="US-20010003680-A1-CLM-00003] 3. The process as claimed in
    claim 1 ,
    wherein the treatment sequence B2 is followed by a treatment B3 comprising drying the semiconductor wafers.
    [4" id="US-20010003680-A1-CLM-00004] 4. The process as claimed in
    claim 3 ,
    wherein the treatment of the semiconductor wafers is sequenced according to the term m*(B1+ B2)+ B3,
    m being an integer number and the treatment B1 and the treatment sequence B2 being carried out in succession, and
    this taking place m times, before the drying treatment B3 is performed.
    [5" id="US-20010003680-A1-CLM-00005] 5. The process as claimed in
    claim 1 ,
    wherein in treatment sequence B2, the aqueous HF solution contains HF in a concentration of from 0.001% to 2% by weight and optionally HCl in a concentration of up to 2% by weight and optionally a surfactant; and
    wherein all percents by weight are based upon the total solution weight.
    [6" id="US-20010003680-A1-CLM-00006] 6. The process as claimed in
    claim 1 ,
    wherein in treatment sequence B2, the aqueous O3 solution contains O3 in a concentration of from 1 ppm to 30 ppm and is optionally exposed to megasonic waves.
    [7" id="US-20010003680-A1-CLM-00007] 7. The process as claimed in
    claim 1 ,
    wherein the treatment liquid used last in the treatment sequence B2 contains ozone and is optionally exposed to megasonic waves.
    [8" id="US-20010003680-A1-CLM-00008] 8. The process as claimed in
    claim 3 ,
    wherein the drying treatment is carried out using a step selected from the group consisting of centrifuging, using hot water, using isopropanol, and using marangoni principle.
    [9" id="US-20010003680-A1-CLM-00009] 9. The process as claimed in
    claim 2 ,
    wherein in treatment B1 the aqueous SC1 solution contains a liquid selected from the group consisting of NH4OH and H2O2, and TMAH (= tetramethylammonium hydroxide) and H2O2.
    [10" id="US-20010003680-A1-CLM-00010] 10. The process as claimed in
    claim 1 , comprising
    carrying out each treatment with a treatment liquid in a bath.
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    同族专利:
    公开号 | 公开日
    KR100351229B1|2002-09-09|
    SG83159A1|2001-09-18|
    US7172975B2|2007-02-06|
    JP2000164560A|2000-06-16|
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US5014737A|1989-11-13|1991-05-14|Allan Berman|Quartz integrated trough/sump recirculating filtered high-purity chemical bath|
    US5593538A|1995-09-29|1997-01-14|Motorola, Inc.|Method for etching a dielectric layer on a semiconductor|
    US5803980A|1996-10-04|1998-09-08|Texas Instruments Incorporated|De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue|
    US6273098B1|1997-11-24|2001-08-14|Cypress Semiconductor Corporation|Extension of the useful life of a chemical bath used to process a substrate|US6451124B1|2000-07-27|2002-09-17|Wacker Siltronic Gesellschaft Fur Halbleiterma Terialien Ag|Process for the chemical treatment of semiconductor wafers|
    US6562728B2|2001-09-11|2003-05-13|Mitsubishi Heavy Industries, Ltd.|Surface treatment method of germanium-containing semiconductor substrate that includes immersion of the substrate in chemical solutions to remove foreign matter|
    US20040069321A1|2002-10-11|2004-04-15|Christophe Maleville|Method and a device for producing an adhesive surface on a substrate|
    US20050139231A1|2003-12-31|2005-06-30|Commissariat A L'energie Atomique|Method of wet cleaning a surface, especially of a material of the silicon-germanium type|JP3076202B2|1994-07-12|2000-08-14|三菱マテリアルシリコン株式会社|Method of depositing polysilicon film for EG|
    US5516730A|1994-08-26|1996-05-14|Memc Electronic Materials, Inc.|Pre-thermal treatment cleaning process of wafers|
    DE59508757D1|1995-03-10|2000-11-02|Astec Halbleitertechnologie Gm|Method and device for cleaning silicon wafers|
    JP3575859B2|1995-03-10|2004-10-13|株式会社東芝|Semiconductor substrate surface treatment method and surface treatment device|
    US6132522A|1996-07-19|2000-10-17|Cfmt, Inc.|Wet processing methods for the manufacture of electronic components using sequential chemical processing|
    US5919311A|1996-11-15|1999-07-06|Memc Electronic Materials, Inc.|Control of SiO2 etch rate using dilute chemical etchants in the presence of a megasonic field|
    US6296714B1|1997-01-16|2001-10-02|Mitsubishi Materials Silicon Corporation|Washing solution of semiconductor substrate and washing method using the same|EP1132951A1|2000-03-10|2001-09-12|Lucent Technologies Inc.|Process of cleaning silicon prior to formation of the gate oxide|
    KR100822236B1|2000-11-30|2008-04-16|토소가부시키가이샤|Resist release agent|
    DE10239773B3|2002-08-29|2004-02-26|Wacker Siltronic Ag|Cleaning a semiconductor wafer comprises treating the wafer under megasound with an aqueous solution containing ozone, and treating the wafer with an aqueous solution containing hydrofluoric acid and hydrochloric acid|
    法律状态:
    1999-10-27| AS| Assignment|Owner name: WACKER-SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERI Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BRUNNER, ROLAND;SCHWENK, HELMUT;ZACH, JOHANN;REEL/FRAME:010343/0840 Effective date: 19991005 |
    2004-07-30| AS| Assignment|Owner name: SILTRONIC AG, GERMANY Free format text: CHANGE OF NAME;ASSIGNOR:WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AKTIENGESELLSCHAFT;REEL/FRAME:015596/0720 Effective date: 20040122 |
    2007-01-17| STCF| Information on status: patent grant|Free format text: PATENTED CASE |
    2010-07-30| FPAY| Fee payment|Year of fee payment: 4 |
    2014-07-31| FPAY| Fee payment|Year of fee payment: 8 |
    2018-07-30| MAFP| Maintenance fee payment|Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553) Year of fee payment: 12 |
    优先权:
    申请号 | 申请日 | 专利标题
    DE198534868||1998-11-19||
    DE19853486A|DE19853486A1|1998-11-19|1998-11-19|Process for the wet chemical treatment of semiconductor wafers|
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