Method for making semiconductor integrated circuits

专利摘要:
Improved integrated bipolar semiconductor structures and a method of fabricating same are disclosed. The logic circuit structures disclosed have enhanced density and speed power product. The teaching of the disclosed logic circuit structures includes utilization and extension of the known concepts of Current Hogging Injection Logic (CHIL) and Integrated Injection Logic (I2L). The disclosed method of fabrication includes a minimum number of process steps, where each step is well within the state of the art and does not contain critical alignment problems.
公开号:SU912065A3
申请号:SU772542550
申请日:1977-11-15
公开日:1982-03-07
发明作者:Х.Бергер Хорст；Курт Видманн Зигфрид
申请人:Интернэшнл Бизнес Машинз Корпорейшн (Фирма)；
IPC主号:

专利说明:

ion doping, creating the regions PI, P2 and P3. After oxidation, OKHccjr 6 is grown in windows with a thickness of 0.1 µm, insulating cover 7 is applied again (Fig. 4, which is photolithographically opened with window 8, which is noncritical in size (the so-called black mask). Thin oxide is removed through this mask over the PZ region by liquid etching. Then the mask 7 is removed, doping is carried out
/ g-hip, e.g., diffusion of phosphorus and repeated etching, remove the thin oxide over the P1 and P2 regions (Fig. 5).
The proposed method makes it possible to simplify the creation of the regions of the first conductivity and concurrency requirements, which occurs during repeated photolithographic operations. In turn, a single mask allows to bring the elements of the integrated circuits as close as possible, allowing a substantial increase in the density of the arrangement, and hence the degree of integration.
An uncritical mask for opening the emitter or collector areas allows photolithography without precise matching, which even simplifies the method and, consequently, reduces the cost of ready-made integrated semiconductor circuits with injection power.

权利要求:
Claims (2)
[1]
1. The patent of Germany No. 1789055, cl. 21 q 11/02, publ. 1978
[2]
2. For the FRG N 2419817, cl. 21 q 11/02, publ. 1974 (prototype).
Fg / f. /
FIG. g

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引用文献:

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NL7107040A|1971-05-22|1972-11-24|

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US3919005A|1973-05-07|1975-11-11|Fairchild Camera Instr Co|Method for fabricating double-diffused, lateral transistor|

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US3959809A|1974-05-10|1976-05-25|Signetics Corporation|High inverse gain transistor|

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DE2446649A1|1974-09-30|1976-04-15|Siemens Ag|BIPOLAR LOGIC CIRCUIT|

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US4058419A|1974-12-27|1977-11-15|Tokyo Shibaura Electric, Co., Ltd.|Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques|

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DE2509530C2|1975-03-05|1985-05-23|Ibm Deutschland Gmbh, 7000 Stuttgart|Semiconductor arrangement for the basic building blocks of a highly integrable logic semiconductor circuit concept based on multiple collector reversing transistors|US4199776A|1978-08-24|1980-04-22|Rca Corporation|Integrated injection logic with floating reinjectors|

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JPS55170895U|1979-05-26|1980-12-08|

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US4338622A|1979-06-29|1982-07-06|International Business Machines Corporation|Self-aligned semiconductor circuits and process therefor|

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US4794277A|1986-01-13|1988-12-27|Unitrode Corporation|Integrated circuit under-voltage lockout|

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US5177029A|1989-03-28|1993-01-05|Matsushita Electric Works, Ltd.|Method for manufacturing static induction type semiconductor device enhancement mode power|

法律状态:

优先权:

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申请号 | 申请日 | 专利标题

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DE2652103A|DE2652103C2|1976-11-16|1976-11-16|Integrated semiconductor arrangement for a logical circuit concept and method for their production|

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