• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    1443827 Cathode arrangement for reactive sputtering TRIPLEX SAFETY GLASS CO Ltd 4 April 1974 [27 April 1973] 20184/73 Heading C7F A cathode unit comprises a metal cathode 271 and a shield surrounding the cathode on all sides except that facing the substrate, the shield having spaced inner and outer walls 281, 282 between which a sputtering atmosphere is fed into the working space between cathode and substrate. The cathode may be of elongate rectangular form, and have means 52, 51, to pass cooling liquid therethrough; working gas is supplied at 331 and baffles 283, tallest immediately adjacent 331 and reducing in height with distance therefrom, control distribution of the gas along the cathode. Since no gas passes between 271 and 281, the breakdown voltage is higher than the applied cathode potential, e.g. a spacing of 2 to 6 mm. at 5 x 10<SP>-2</SP> Torr enables a working voltage of -2 to -5 KV to be used. The cathode may be In/Sn used in O 2 /Ar to deposit a mixed oxide on a sheet substrate using several parallel cathodes which are reciprocated to give a uniform coating; the substrate is electrically heated and its temperature measured by a thermocouple.
    公开号:SU764619A3
    申请号:SU2023934
    申请日:1974-04-26
    公开日:1980-09-15
    发明作者:Берроуз Кеннет；Хискатт Роберт
    申请人:Триплекс Сейфти Гласс Компани Лимитед (Фирма)；
    IPC主号:
    专利说明:

    (54) CATHODE UNIT
    one
    The invention relates to the field of vacuum coating and can be used, for example, in the preparation of metal oxide coatings on various substrates.
    A cathode block is known predominantly for sputtering devices for applying electrically conductive films, containing a metal cathode, a multilayer electrostatic screen surrounding the cathode from all sides, with the exception of the working portion of the cathode surface 1.
    However, this unit has a low reliability of operation due to the return of electrical breakdown between the cathode and the electrostatic screen.
    The purpose of the invention is to increase the reliability of the cathode by preventing the possibility of electrical breakdown between the cathode and the electrostatic screen. x ,,
    For this, the cathode block is mainly used for devices for sputtering electrically conductive films containing a metal cathode, a multi-layer electrostatic shield surrounding the cathode from all sides, except for the working surface of the cathode surface; pipeline, one end of which is introduced into the gap between the walls of the electrostatic screen, and the other end is connected to the supply system of neutral gas.
    FIG. 1 is a diagram of the structure of the cathode block; FIG. 2 is a section through the cathode block; FIG. 3 10 layout of the pipeline and cathode blocks.
    The cathode block, preferably for sputtering devices for applying electrically conductive films, comprises a conduit 1 ,. one end of which is inserted into the gap between walls 2 and 3, forming a multi-layer electrostatic screen surrounding the metal cathode 4
    20 from all sides except the worker
    the surface of the cathode 4. The second end of the pipeline 1 is connected to the supply system, neutral gas.
    The cathode block functions as follows.
    Several cathode block placed in a vacuum chamber (not shown). Pipeline 1 is connected to all cathode blocks. The metal is sprayed onto the substrate 5,
    This is located in a vacuum chamber and located above the cathode blocks. When the metal is sprayed, the cathode 4 is heated. In order to cool the cathode 4, its internal cavity is filled with water supplied through pipe b or 7. However, of these pipes is the filling and the second is the cooling water discharging.
    Pipeline 1 supplies neutral gas. Pipelines may be several. To achieve greater uniformity of flow in the cavity between walls 2 and 3, additional baffles may be located. birth 8.9.
    For a rectangular cathode 4 with dimensions of 7.5 to 60 cm, the total gas flow rate of the electrostatic screen is approximately 15 l / s at a pressure of 0.05 mm Hg. The gap between walls 2 and 3 can be selected from 3 to 5 mm. The operating voltage of the cathode block is selected from 2 to 5 kV.
    -2 Pressure in vacuum chamber 5x10 mm
    Hg
    The presence of a neutral gas between walls 2 and 3 eliminates the possibility
    sample between the cathode 4 and the walls 2 and 3, forming an electrostatic screen.
    权利要求:
    Claims (1)
    [1]
    1. For the application of the Federal Republic of Germany No. 2149606, cl. C 23 C 15/00, 1971 (prototype).
    类似技术:
    公开号 | 公开日 | 专利标题
    SU764619A3|1980-09-15|Cathode block
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    SU740157A3|1980-06-05|Device for coating surface of base with transparent electroconducting film
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    EP0152472A1|1985-08-28|Rotatable sputtering apparatus
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    GB1039691A|1966-08-17|Vacuum coating and ion bombardment apparatus
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    US3536602A|1970-10-27|Glow inhibiting method for glow discharge apparatus
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    DE2433382A1|1975-01-30|DEVICE FOR VAPORIZATION OF THIN LAYERS UNDER VACUUM
    GB766459A|1957-01-23|Improvements in or relating to high-vacuum coating devices
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    US3537973A|1970-11-03|Sequential sputtering with movable targets
    US3544445A|1970-12-01|Floating shield in a triode sputtering apparatus protecting the base from the discharge
    US3629095A|1971-12-21|In or relating to vacuum apparatus
    JPS61241930A|1986-10-28|Plasma chemical vapor deposition device
    RU2023744C1|1994-11-30|Cathode device for application of coatings by ion-plasma method
    JP4904725B2|2012-03-28|Winding type vacuum deposition method
    JPH07135440A|1995-05-23|Method for forming zno thin film
    JPS58101420A|1983-06-16|Forming method of deposited film
    KR101683726B1|2016-12-20|apparatus for processing substrates
    同族专利:
    公开号 | 公开日
    FR2227345A1|1974-11-22|
    NL7404891A|1974-10-29|
    CH590936A5|1977-08-31|
    SE408913B|1979-07-16|
    FR2227345B1|1977-10-14|
    GB1443827A|1976-07-28|
    ZA742375B|1975-11-26|
    JPS539594B2|1978-04-06|
    AU6775774A|1975-10-16|
    CA1024937A|1978-01-24|
    DE2418008A1|1974-11-21|
    IT1010755B|1977-01-20|
    US3890217A|1975-06-17|
    BE814286A|1974-10-28|
    JPS5013275A|1975-02-12|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US3325394A|1963-07-01|1967-06-13|Ibm|Magnetic control of film deposition|
    US3526584A|1964-09-25|1970-09-01|Western Electric Co|Method of providing a field free region above a substrate during sputter-depositing thereon|
    US3369991A|1965-01-28|1968-02-20|Ibm|Apparatus for cathode sputtering including a shielded rf electrode|
    US3361659A|1967-08-14|1968-01-02|Ibm|Process of depositing thin films by cathode sputtering using a controlled grid|
    US3595775A|1969-05-15|1971-07-27|United Aircraft Corp|Sputtering apparatus with sealed cathode-shield chamber|US3945911A|1974-08-28|1976-03-23|Shatterproof Glass Corporation|Cathodes for sputter-coating glass sheets or other substrates|
    US3976555A|1975-03-20|1976-08-24|Coulter Information Systems, Inc.|Method and apparatus for supplying background gas in a sputtering chamber|
    US4009090A|1975-12-03|1977-02-22|Shatterproof Glass Corporation|Sputter-coating of glass sheets or other substrates|
    FR2403645B2|1977-09-14|1981-08-21|Vide & Traitement Sa|
    US4116806A|1977-12-08|1978-09-26|Battelle Development Corporation|Two-sided planar magnetron sputtering apparatus|
    US4175030A|1977-12-08|1979-11-20|Battelle Development Corporation|Two-sided planar magnetron sputtering apparatus|
    JPH0144785B2|1980-12-27|1989-09-29|Clarion Co Ltd|
    US4362611A|1981-07-27|1982-12-07|International Business Machines Corporation|Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield|
    US4420385A|1983-04-15|1983-12-13|Gryphon Products|Apparatus and process for sputter deposition of reacted thin films|
    US4526670A|1983-05-20|1985-07-02|Lfe Corporation|Automatically loadable multifaceted electrode with load lock mechanism|
    US20050211544A1|2004-03-29|2005-09-29|Seagate Technology Llc|Electrical biasing of gas introduction means of plasma apparatus|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    GB2018473A|GB1443827A|1973-04-27|1973-04-27|Reactive sputtering apparatus and cathode units therefor|
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