![]() Method of producing thin layers of superconducting oxide materials
专利摘要:
A superconductive thin layer of an oxidic material is manufactured by contacting at least two starting substances with each other, after which diffusion and a chemical reaction in the solid state occur by means of increasing the temperature, while forming the superconductive thin layer. 公开号:SU1678219A3 申请号:SU884356199 申请日:1988-07-26 公开日:1991-09-15 发明作者:Виллен Северин Ян;Де Вит Гийсбертус;Мишель Де Леув Дагоберт;Адрианус Хенрикус Антониус Мутсарс Корнелис 申请人:Н.В.Филипс Глоэлампенфабрикен (Фирма); IPC主号:
专利说明:
The invention relates to a method for producing a superconducting thin layer of an oxide material. The aim of the invention is to prevent undesirable interaction of the superconducting layer and the substrate. The invention is based on an experimentally established phenomenon, according to which, due to the diffusion of raw materials and the subsequent chemical reaction between them, it is possible to achieve the formation of a super-reduced layer, the composition of which varies slightly in the direction perpendicular to this thin layer. Part This layer has a composition with optimal superconducible properties. Since the resistance of this layer when used is zero, the transmission of electric current occurs (essentially) exclusively through this layer. The starting materials may come into contact with each other, for example, in the form of two bulk substrate materials, on the interface surface of which a superconducting layer is formed. In a preferred embodiment of the method according to the invention, one of the starting materials forms a substrate on which CM 3 16 Another (other) raw material (materials) in the form of a thin layer is applied to the core, after which the entire composition is heated. In an alternative embodiment of the process according to the invention, the starting materials are deposited on an inert substrate in the form of two thin layers, followed by a temperature increase step. After the temperature increase step, the superconducting thin layer may optionally be processed at a high temperature in an oxidizing atmosphere. In a preferred embodiment of the method according to the invention, the temperature increase in order to stimulate diffusion and chemical reaction is carried out under oxidizing conditions. The most suitable superconducting material for this case is YBa Cu507 & with Tc 90 K. Meaning & equal to about 0.1 - 0.5. Oxygen can be partially replaced by fluorine, for example, up to 1 atom in the above general formula, which leads to some increase in Tc. In accordance with a preferred embodiment of the invention, a Y Cu205 substrate is used on which a thin layer of Bac2 O2 is formed. Ba-rich compounds are usually less suitable for use as a substrate because of their poor fusing properties in this case and their rather strong susceptibility to negative influence from moisture. In an alternative embodiment of the invention, a CuO substrate with a Y тонBa407 thin layer formed on its surface is used. The advantages of this embodiment of the invention include the fact that a suitable substrate can easily and easily be fabricated by iSO, and also that yttrium ions and barium ions are already present in the desired ratio, so that it is possible to obtain a material of composition define It should also be borne in mind that, as a rule, it exists in the form of carbonate CO. This compound has no effect on diffusion and chemical reaction. In another preferred embodiment of the invention, the substrate YzBaCu05 is used, on which a thin layer of a mixture of CuO (40 mol.%) and BacO (60 mol.%). The method of the invention can be used to make superconducting oxide materials, for example, Bi, Ca, and Sr cuprates. Another group of acceptable superconducting materials is made on the basis of LaxMe2 xCuO. In this case, Me is selected from the group CaSr and Ba, and x ranges between 1 and 2. La can be replaced, for example, Y, Tc of the resulting film Tc 40 K. The thin layer of these superconducting materials can be easily and simply obtained by the formation of thin layers of LagCuO. and BaMeSiOts. one on the surface of the other on an inert substrate followed by a temperature increase to stimulate the desired diffusion and chemical reaction. Example 1. An appropriate amount of YgCugpg-powder is isostatically pressed under a pressure of 800 MPa with the final formation of a tablet with a diameter of 25 mm. Then for 30 minutes in an atmosphere of air, this tablet is compressed under a pressure of 100 MPa until it reaches a density that is 95-100% of the theoretical density. The surface is then carefully polished to a roughness of less than 1 micron. Using a laser sputtering method in vacuum, we form a 1 µm thick BacOi layer on the surface. This layer is amorphous and consists of BaCOj, which upon subsequent heating is converted to BaClOg. The molar ratio of Ba and C in this layer is preferably 1: 1. Then, the substrate and the formed thin layer are heated to 850 ° C at a rate of 200 ° C / h and maintained at this temperature for 2 hours. Then the block thus formed is cooled at a rate of 100 ° C / h to 20 ° C. All this procedure takes place in an oxygen atmosphere at a pressure of 0.1 MPa. The results of x-ray diffraction measurements suggest that a chemical reaction of + 4BaCuOz + n02- - 2YBaЈCu OfЈ produces some amount of YBazCu 07. Formed amount of BaClou. completely was not used, but a thinner YBaCu O layer is formed between the superconducting layer (about 0.5 µm thick) and the substrate. Then scratches were applied to the surfaces and a gold layer was formed by vapor deposition to ensure good electrical contacts with the superconducting layer. The results of the resistance measurements indicate that the value of Tc is approximately equal to 93 K, and the width of the transition zone is approximately 10 K. At 240 K, a relatively sharp decrease in the resistance by 5-10% occurred in the temperature range of 10 K. It is possible that this was due to the presence of other phases here and changes in the composition of YBa CujOj.jJ within the existing range of this compound. Since Tc depends on the composition and since the optimum layer always has a decisive influence on the measurement results, some changes may occur in the position and thickness of the layer in which resistance is measured. Example 2. Using a spray method, to the state of plasma, a layer of approximately 3 microns was formed on a substrate of CuO. The procedure was carried out as described in example 1 of the heating stage, during which after diffusion the following chemical reaction occurs: 6 Cuo + Ugva407-CO + p20 00, 2 YBa Cu307 g. J In the whole layer, the reciprocal amounts of Y and Ba reach the desired value. At the points where the superconsolidated layer is rich in the content of CuO, the layer is less orthorhombic or simply less orthorhombic and, consequently, less superconducible. Nevertheless, using the method of the invention, layers of optimal composition can be obtained with a TЈ of approximately 90 K. This method is easily regulated, since the formation of an optimal superconducting layer does not depend critically on the parameters of the layer formation process. Example 3. Using the sputtering method on a Y BaCuO substrate, a layer is formed consisting of a mixture of CuO and BaCiOl with a molar ratio of 2: 3. The heating step of example 1 is then carried out during which immediately after completion of diffusion | the following chemical reaction occurs: 0 five 0 five 0 five 0 five 0 + 3 BaCu02 + Y2BaCu05 + 2 CuO + n YBa2Cu307 s. Example 4 By the method of vapor deposition on a sapphire (alumina) substrate, a layer of LaSrCu04-Pa was formed by the same substrate using the same method to form a layer of La-CuO. Then, as a result of heating to 950 C for 2 hours, diffusion and chemical reaction in the solid phase was caused: La2CuO + T.aSrCu04 - 2 LaxSr2 x. with the final formation of a boundary layer whose composition has changed as a function of location. The end result of this treatment was that at some specific temperatures, a magnetic field and an electric current, a thin layer is always formed that has an optimal composition, which is usually achieved at x 1.8.
权利要求:
Claims (4) [1] 1. A method of producing a superconducting thin layer of oxide material by depositing the initial oxide materials on a substrate followed by heat treatment in an oxidizing environment, characterized in that, in order to prevent the interaction of the superconducting layer and the substrate, at least two initial oxide materials are used, which deposit t in the form of two layers arranged one above the other in mechanical contact, and the treatment in an oxidizing medium is carried out in the mode of formation of a superconducting thin layer at the interface la layers due to diffusion and chemical reactions occurring in the solid phase. [2] 2. The method according to claim 1, which is different from the fact that a substrate is used as one layer of the starting oxide material. [3] 3. A method according to claim 2, characterized in that, in order to obtain a superconducting thin layer, a substrate material is used on which a layer of YBaCuO is applied. [4] 4. A method according to claim 2, characterized in that, in order to obtain a superconducting thin layer 71678219 8 YBaCu Of-S, B as a material of a sub-material consisting of spoons use CuO, on the surface of 40 mol.% CuO and 60 mol.% BaCuOg. which is deposited .6. Method pop 1, characterized in that, for the purpose of obtaining 5. The method according to claim 2, distinguishing between a thin superconducting layer and the fact that, in order to obtain, LaxHe2 xСиОф, nor a thin superconducting layer where Ca - Sr and Ba YBaЈdi30T $, as a material1 xЈ2, YgBaCuOg is used as the initial oxide substrate, and it is used on coaxial materials. and b to put a thin oxide layer of LaMeCu04.
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同族专利:
公开号 | 公开日 EP0301656A1|1989-02-01| NL8701788A|1989-02-16| US4988672A|1991-01-29| JPS6451305A|1989-02-27| KR890002908A|1989-04-11|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题 US3296684A|1962-09-24|1967-01-10|Nat Res Corp|Method of forming intermetallic superconductors| DE1256507B|1964-12-12|1967-12-14|Siemens Ag|Process for the production of superconducting layers| IT1004408B|1974-03-22|1976-07-10|Cominato Nazionale Per L En Nu|PROCEDURE FOR THE PRODUCTION OF SUPERCONDUCTOR CABLES IN NB3 AL DROWNED IN A COPPER MATRIX AND SUPER CONDUCTOR CABLES OBTAINED WITH IT| US4367102A|1980-01-22|1983-01-04|Siemens Aktiengesellschaft|Method for the manufacture of a superconductor containing an intermetallic compounds|EP0579279B1|1989-07-19|1995-12-06|Mitsubishi Materials Corporation|Single-crystal wafer having a superconductive ceramic thin film formed thereon| US5200389A|1989-03-13|1993-04-06|The Tokai University Juridicial Foundation|Method for manufacturing an oxide superconducting article| JPH0712928B2|1989-03-13|1995-02-15|学校法人東海大学|Superconducting article manufacturing method| EP0406126B2|1989-06-30|1997-12-17|Sumitomo Electric Industries, Ltd.|Substrate having a superconductor layer| US5206213A|1990-03-23|1993-04-27|International Business Machines Corp.|Method of preparing oriented, polycrystalline superconducting ceramic oxides| US5284825A|1990-05-14|1994-02-08|General Atomics|Contaminant diffusion barrier for a ceramic oxide superconductor coating on a substrate|
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申请号 | 申请日 | 专利标题 NL8701788A|NL8701788A|1987-07-29|1987-07-29|METHOD FOR MANUFACTURING A SUPER-CONDUCTIVE THIN LAYER| 相关专利
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