• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A magneto optical thin film recording medium is disclosed having very high carrier-to-noise ratios and high rotation angles. A transmission electron microscope photomicrograph (at 200,000 X) of one such medium is shown in Figure 1. These are multi-phase amorphous materials having magnetic anisotropy perpendicular to the plane of the thin film. They are produced in a triode vacuum sputtering process at vacuums in the range of 4 x 10<-><3> to 6 x 10<-><4> Torr. By adjusting process parameters such as substrate temperature, anode bias and deposition rate, the properties of the thin film can be altered.
    公开号:SU1503688A3
    申请号:SU843743753
    申请日:1984-05-16
    公开日:1989-08-23
    发明作者:Ниль Гарднер Ричард
    申请人:Миннесота Майнинг Энд Мануфакчуринг Компани (Фирма)；
    IPC主号:
    专利说明:

    The invention relates to computing and can be used in the construction of magneto-optical storage devices.
    The purpose of the invention is to increase the signal-to-noise ratio when reading information.
    The magneto-optical information carrier contains a non-magnetic substrate on which reflections are located;
    the domain containing amorphous gshenka with magnetic anisotropy, perpendicular to the film surface, and the transparent passivating layer. In this case, the domain-containing film is made of an ich alloy of at least one pe. jKo-land element from the group of gadolinium - Tep6in i - dysprosium and, in terms of mass, one measure of one transition metal. from the group iron - cobalt - chromium of thickness
    non (0.5 - 20) with a domain size (0.1 - 5) and with an angle of magneto-optical rotation of the polarization plane of at least 0.2A ° at a wavelength of 0.6328 10 m and at least 0.4 ° at a wavelength (0.780 - 0.850) -10 m The content of rare-earth element and transition metal in the alloy is 16-35 and 84-65 at.%, Respectively.
    Magneto-optical amorphous thin films can be made by known methods of applying thin films, such as sputtering, evaporation and spraying with cooling. When sprayed with hot cooling, the liquid from the film components hits the cold surface, where it cools quickly and hardens, forming an amorphous bulk film. Regardless of what deposition rate is used, the substrate temperature should be less than the temperature at which crystallization occurs, for to get amorphous magnetic materials.
    The most effective method of applying a thin film is spraying. The conditions for the deposition of amorphous thin films are: initial vacuum less than 1 50 Torr, spray pressure from 3 10 to 2, preliminary spraying of the material from the deposition source to clean its surface, substrate temperature 30 - 100 ° C, partial pressure argon.
    In the process of cathode sputtering, ions of argon gas bombard the cathode target from a hard alloy in the spray chamber, knocking out metal atoms by transferring the moment of accelerated ions to metal atoms near the surface of the target. The cathode is calcined, and the mass of ionized gas is the cathode and the anode, which is a plasma. The substrate is placed at the anode and the atoms of the metal alloy cross the space between the anode and cathode, precipitating or condensing on the substrate.
    It is possible to use many film substrates made of any material that has dimensional stability in order to minimize variations in radial displacements during recording and reproduction. You can also use semiconductor5


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    nicknames, insulators or metals. Suitable substrates include steel, spinel, quartz, sapphire, alumina, metals such as aluminum and copper, and polymers such as polymethyl methacrylate and polyester. The substrate is usually disc-shaped.
    The optical properties of an amorphous thin film are both a function of the composition and the method by which the composition is prepared or applied. It is known that rare earth metals are easily oxidized, the control of this oxidation is an important part of the present invention, which is a product of higher purity. If the anode is given a negative potential with respect to the plasma, then the resulting method is called sputtered deposition. This displacement causes the preferred removal of impurities, such as oxygen, from the base film during re-spraying.
    Radio frequency sputtering (rather than DC sputtering) can be used to clean and apply insulators, such as transparent dielectric films. In this method, an rf ac voltage is applied to the sputtering chamber using rf electrodes.
    In operation, the sputtering chamber is typically pumped to some initial background pressure (e.g., 4.0), after which spray gas (argon) is supplied. Typically, the substrate is cleaned by pre-spraying or spray etching for 60 seconds at a bias voltage of 300 V. The substrate is exposed to a stream of atoms from the target after the predetermined conditions for sputtering are achieved. The deposition rate of the magneto-optical film is usually 0.5-4.0 A / s in the case of the gadolinium-terbium-iron ternary alloy. A thin film thermocouple is installed near the anode substrate holder to measure the approximate temperature of the substrate and the equilibrium plasma.
    A higher vacuum in the triode device results in thin films of high density and with a higher refractive index.
    than the known magneto-optical films.
    The properties of the magneto-optical film on its surface may differ from the bulk properties of the film. This is particularly evident when comparing the results of measurements of coercivity for the surface and for the volume (non-oxygen content is 55–62 at.%). Analysis of the depth profile shows that the content of hydrogen within the limits of the Gd-Tb-Fe films is 200 times less than in SUD and is 0.3 at.%.
    When applying a magnetized amorphous film on the reflective layer
    in film. In some cases, the magneto-optical rotation of ages coercivity Hj changes by an order of magnitude. These changes are especially important in the optical memory system, since the interaction of the incident optical beam and storage materials based on rare-earth transition metals occurs in the first 150 - 200 A film. It is possible that the oxidation of the rare-earth element is the main reason for the change in the scientific research institute for the characteristics of a thin film on the surface.
    Passivation is a change in a chemically active metal surface to a substantially less reactive state. The coating of the film of rare earth elements and transition metals with a passivating layer, usually consisting of a film with a thickness of not more than 300 A SiOx (where x is not 2), eliminates the change in characteristics with time, and obtain higher values of magneto-optical rotation than previously obtained for films of rare earth elements and transition metals without such a layer. This is a significant increase in the stability of magneto-optical memory materials from rare-earth elements and transition metals. Other materials that can be used for the passivation layer are: titanium dioxide, SiOj, cerium oxide, alumina and aluminum nitride.
    Depth profiling of elements in a sample of a carrier containing a film of a Gd-Tb-Fe alloy, passivated with a glass coating of SiO, is carried out using Auger electron spectroscopy and mass spectroscopy of secondary ions. The results show that the oxygen content in the - Gd-Tb-Fe film is less than one atomic percent. Chemical analysis using electron spectroscopy shows that SiOx films deposited over Gd-Tb-Fe films have a value of x from 1.2 to 1.6 (or
    50
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    It is melting due to the fact that the Farad effect is added to the Kerr effect. The Farade effect rotates the plane of polarization of light as it passes back and forth through the magneto-optical layer, while the Kerr effect causes it to rotate on the surface of the layer. Therefore, it is advantageous to apply magnetized amorphous films on a substrate that is made reflective. Typical reflective layers are copper, aluminum or gold.
    The operation of the proposed storage medium can also be improved by the interference force. The counting beam reflected from the magneto-optical carrier has a regular component I, and a magneto-optically induced component 1m. The magnitude of the light rotation effect is 1.

    is determined both by the intrinsic properties of the carrier and the possibility of transmitting the rotated radiation from the carrier to some detection means outside the carrier. Optical interference layers affect this latter aspect. In addition to the optical effects, a surface layer of a transparent dielectric, such as glass, can reduce the effect of oxidation on an amorphous metal alloy. Such surface layers also reduce the effect of dust and 5 impurities on the passage of the reading beam (these carriers are usually referred to as interference-enhanced carriers). The sensitivity of the magnetic thin layer varies depending on the thickness of the dielectric interference layer covering it, and also on the composition of the magneto-optical amorphous alloy and on the wavelength of the incident light.
    An example. As a substrate, a polished aluminum disc on a polymeric lining having a diameter of 30 cm is used. This disc is prepared by coating with a polymer (e.g.
    styrene butadiene polymer) polished alnicle disc, which is preliminarily purified. A polymer solution (e.g., a solution containing 47 (solids in a solvent with a boiling point of more than 140 ° C) is applied onto the disk while simultaneously rotating. The solvent evaporates, leaving a thin polymer backing layer. The function of the backing layer is to obtain a very flat surface for The polymer should wet and adhere to the surface of the aluminum. The lined disc is covered with chromium oxide cross-section (to promote adhesion of the reflective layer to the substrate) using magnetron sputtering. When using a chromium target in an atmosphere of argon, water vapor and air. Chromium oxide is sprayed for 1-2 min at a target current of 500 mA and with a background working pressure of 210 Torr to
    to obtain the nucleation of the layer that promotes adhesion, 40 A thick. Other suitable primary materials can be oxides of titanium, tantalum and aluminum. Over this, a 1000-cm thick layer of copper is deposited using a vacuum
    resistive evaporation at a background pressure of 2-10 Torr. The substrate thus obtained is cleaned by spray etching for 60 seconds at a bias voltage of 300 V in the presence of argon. An interstitial glass film of SiOj silicon suboxide is deposited from a smoke source of silicon monoxide to a thickness of 250 A.
     The triode sputtering method is used to coat the resulting substrate with gadolinium-terbium-iron alloy. High purity gaseous argon is injected into the triode device and the background pressure is obtained.
    and deposition of a triple alloy film is carried out at a substrate displacement of 300 V and at a target displacement of 300 V. A deposition rate of 2.5 - 3 / S / s with a final film thickness of 285 A, 1360 A glass coating is applied from a SiO smoke source in vacuum at pressure below 9.040 in vacuum at a pressure below 9.0 Torr.
    The alloy target that is used to make this magnetospray.
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    ABOUT
    with about
    H
    tic film, is a set of desired components. The final composition of the deposited films is determined by the energy spectrum using x-ray fluorescence analysis. The composition of the obtained sample (number 34-195), which contains, at,%, is determined: gadolinium 6.5; terbium 10.0; iron 83.5.
    The table shows the various magneto-optical properties of the obtained sample (34-195) studied in examples 1-7 compared with some published values of the known magneto-optical carriers investigated in examples 8-12. All data for the obtained sample (34-195) were recorded and read with a disk radius of 115 mm,
    The work of the proposed magneto-optical information carrier, as well as the known ones, is based on thermomagnetic recording and non-destructive magneto-optical reading of information.
    Erasing can be done by recording new information on old sections of the media or simply exposing any given area to-. The screen is exposed to a laser beam of sufficient intensity followed by cooling of this element in the presence of a magnetic field oriented in the direction of the initially applied magnetic field. Recorded information can be erased entirely by creating a large magnetic bias field in the original direction and a scale for which a laser beam is not needed. Usually, in the process of recording, an external bias magnetic field is applied using a magnet mounted on top or bottom of the magneto-optical carrier, and during the erasing process, the direction of the magnet is reversed,
    Formula of invention
    1, A magneto-optical information carrier containing a non-magnetic substrate on which a reflective layer is located, a domain-containing amorphous film with magnetic anisotropy perpendicular to the surface of the film, and a transparent passivation layer, in order to increase the signal-to-noise ratio when reading information domenoso
    权利要求:
    Claims (2)
    [1]
    Claim
    1. A magneto-optical information carrier containing a non-magnetic substrate on which a reflective layer is located, a domain-containing amorphous film with magnetic anisotropy perpendicular to the film surface, and a transparent passivating layer, characterized in that, in order to increase the signal-to-noise ratio when reading information, the domain the holding film is made of an alloy of at least one rare-earth element from the group of gadolinium terbium of one iron (0.5- ... polaris
    - transitional dysprosium
    - cobalt 20) · Ι0 ' 8 μ s and at least a metal from the chrome group with a domain size
    1503688 Yu ι at least 0.24 ° at a wavelength. 0.6328 * 10 6 m and at least 0.4 ° no waves (0.780 - 0.850) · 10 ' 6
    [2]
    2. The storage medium according to claim 1, wherein the holding of the rare-earth element of the transition metal in the alloy is 16-35 and 84 - 65 at.! , Respectively.
    类似技术:
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    SU1503688A3|1989-08-23|Magnetooptical information carrier
    US4569881A|1986-02-11|Multi-layer amorphous magneto optical recording medium
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    EP0275189B1|1995-03-29|Stable magneto optic recording medium
    US5028305A|1991-07-02|Process for producing magneto-optic recording medium
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    JPH05174435A|1993-07-13|Magneto-optical recording medium
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    JPH05325278A|1993-12-10|Manufacture of magneto-optical recording medium
    同族专利:
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    AU586763B2|1989-07-20|
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    US4615944A|1986-10-07|
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    BR8402316A|1985-04-02|
    HK32690A|1990-05-04|
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    DE3479840D1|1989-10-26|
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    US49517583A| true| 1983-05-17|1983-05-17|
    US06/599,669|US4615944A|1983-05-17|1984-04-12|Amorphous magneto optical recording medium|LV930841A| LV5692A3|1983-05-17|1993-06-30|Magnetic-Optical Information Nuisance|
    LTRP1198A| LT2433B|1983-05-17|1993-09-28|MAGNETINE-OPTINE INFORMATION TIME|
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