• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to ion sources based on the principle of surface ionization, and can be used in electronic technology. The aim of the invention is to increase the brightness of the source. The source contains a vapor supply system for an ionizable substance and an ionizer. The ionizer is designed as a set of elements. In one of the elements there is a central part 11, which is an ion emitter. The ion emitter is located opposite the emission orifice. 4 hp f-ly, 7 ill.
    公开号:SU1473724A3
    申请号:SU853901400
    申请日:1985-05-15
    公开日:1989-04-15
    发明作者:Слодзиан Жорж；Дэнь Бернар；Жирард Франсуа
    申请人:Оффис Насьональ Дъэтюд Э Де Решерш Аэроспасьель О.Н.Э.Р.А. (Фирма)；
    IPC主号:
    专利说明:

    5

    cm
    The invention relates to ion sources based on the principle of surface ionization, and can be used in electronic technology.
    The aim of the invention is to increase the brightness of the source.
    Figure 1 shows the ion source. Longitudinal section; figure 2 shows the working channel of the ionizer, longitudinal section; on fig.Z - view along arrow A in figure 2 (on the ion emitter); 4 shows an ion source together with a system of odds.


    world and ion acceleration; FIG. 3 shows an example of an ionizer channel; Fig. 6 illustrates an exemplary embodiment of an ion beam forming system; Fig. 7 is a diagram of the formation of an ion beam.
    The ion source contains a system 1 for supplying vapor of an ionizable substance to the channel 2 for supplying vapor to a condenser 3, partially blocked by a diaphragm with an emission hole 4 with a diameter of 0.1-1 mm. The ionizer is designed as a system 5 of superposed conductive elements 6-8 with holes forming a cylindrical channel and one element 9 in the form of an aperture with holes 10 at the periphery that fit into the cylindrical channel.
    The central part 11 of element 9 forms an ion emitter located opposite the emission port 4. The substance to be ionized is, for example, in the form of a sublimated compound 12 located inside the vapor supply system. In the case of cesium ions, its salts such as cesium iodide or cesium aluminosilicate can be used. The ion formation and acceleration system, for example, in the form of a grounded extraction electrode 13 with an opening 14, may contain an additional electrode 15 insulated from the extraction electrode 1, to which a potential negative relative to the electrode 13 may be applied. The beam forming system can also be provided with a heat shield 16, for example, of tantalum. An element 17 of lanthanum hexaboride can be installed between the system of elements 6-9 and the end wall of the ionizer 3. Figure 1-7 also shows the trajectories of ions 18 and secondary electrons 19.
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    The ion source works as follows.
    Ionizer 3 is heated in one way or another to a temperature of 1000–1500 ° C, which ensures effective surface ionization of the substance being localized, which enters the working channel of the ionizer, formed by elements 6-9 (FIG. 3).
    In most cases, a subliminate compound of an ionizable substance placed in the solid state in the supply system I can be used. Performing the ionizer in the manner described above provides a high probability of the collision of atoms with the channel walls and their ionization. The use of an ion emitter, made in the form of the central part of element 9, is particularly effective. The shape of the emitter surface should be chosen taking into account the effect of the extracting electric field and the field of spatial charge of ions. The implementation of the Central part 1I of the element 9 convex (fig.Z) increases efficiency.
    The spatial charge of ions can be caused by electrons emitted by a specially installed element 17 from lanthanum hexaboride. This allows an increase in the intensity of the ion beam and the brightness of the source.
    At high ion energies (on the order of 10 keV), the problem of controlling the secondary electrons knocked out by the ions from the extraction electrode 13 arises with the aid of an additional electrode 15, to which a potential controlling the secondary electrons is applied. In the case of a potential negative to the extraction electrode (-320 V), the secondary electrodes are cut off. When a positive potential is applied (+320 V), a beam of electrons with trajectories 19 is formed, focused on the ion emitter. It also increases the intensity of the ion beam 18 and the brightness of the source.
    The use of this source is especially effective for the formation of an ion probe, for which the emission orifice with a diameter of 1-1 mm is used.
    Both positive and negative can be obtained at the source.
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    权利要求:
    Claims (5)
    [1]
    1. A source of ions with surface ionization containing a system for supplying vapors of an ionized substance to a chamber opposite the emission hole forms an ion emitter, while the emission hole 5 has a characteristic size satisfying the condition 0.1 mm <d <s 1 mm and with extension outward.
    [2]
    2. The ion source according to claim 1, characterized in that the ionizable substance is contained in a sublimating chemical compound.
    The channel for supplying vapors to the ionizer including an ion emitter partially overlapping the channel, while from the output end 1 the channel is blocked by a wall with an emission hole behind which there is an ion beam formation and acceleration system including an extracting electrode, distinguishes I mean that, in order to increase the brightness of the source, the ionizer
    [3]
    3. The ion source according to claim 1, characterized in that the ion emitter is convex towards the emission hole.
    [4]
    4. The ion source according to claim 2, characterized in that a disk from is installed between the wall with the emission hole and the system of conductive elements with holes. lanthanum hexaboride with a hole coaxial is filled in the form of a system of conductive elements superimposed with an emission hole and equal to each other with holes forming in the center 25 a cylindrical channel with a cross section smaller than the cross section of the vapor supply channel to the ionizer, and one element in the form of a diaphragm with open-. tii at the periphery, fit into the mentioned cylindrical channel, its diameter.
    [5]
    5. The ion source according to π.1, characterized in that an additional electrode is installed between the wall with the emission hole and the extraction electrode and means are added for supporting the control potential with respect to the extracting central part of the said electrode.
    1 gig!
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    同族专利:
    公开号 | 公开日
    EP0165140A1|1985-12-18|
    US4801849A|1989-01-31|
    EP0165140B1|1988-05-18|
    FR2564636B1|1990-07-06|
    JPS6151729A|1986-03-14|
    DE3562842D1|1988-06-23|
    FR2564636A1|1985-11-22|
    JPH0451929B2|1992-08-20|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US2486452A|1945-04-30|1949-11-01|Cons Eng Corp|Mass spectrometry|
    NL89525C|1954-05-25|
    US3283193A|1962-05-14|1966-11-01|Ellison Company|Ion source having electrodes of catalytic material|
    US3336475A|1964-02-05|1967-08-15|Electro Optical Systems Inc|Device for forming negative ions from iodine gas and a lanthanum boride contact ionizer surface|
    US3864575A|1970-07-25|1975-02-04|Nujeeb Hashmi|Contact ionization ion source|
    DE2222396B2|1972-05-06|1975-04-30|Bodenseewerk Perkin-Elmer & Co Gmbh, 7770 Ueberlingen|Selective ionization detector|
    JPS57205953A|1981-06-12|1982-12-17|Jeol Ltd|Ion source|IL81375A|1987-01-23|1990-11-05|Univ Ramot|Method and apparatus for producing ions by surface ionization of energy-rich molecules and atoms|
    US4954750A|1988-07-07|1990-09-04|Albert Barsimanto|Flexible ion emitter|
    JPH042031A|1990-04-18|1992-01-07|Matsushita Electric Ind Co Ltd|Ion source device|
    GB2460664A|2008-06-04|2009-12-09|Hiden Analytical Ltd|A surface ionization ion source|
    US11031205B1|2020-02-04|2021-06-08|Georg-August-Universität Göttingen Stiftung Öffentlichen Rechts, Universitätsmedizin|Device for generating negative ions by impinging positive ions on a target|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    FR8407606A|FR2564636B1|1984-05-16|1984-05-16|SOURCE OF IONS OPERATING BY SURFACE IONIZATION, IN PARTICULAR FOR THE REALIZATION OF AN IONIC PROBE|
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