• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to the field of microelectronics and can be used in lithographic operations in the manufacture of semiconductor templates. devices and integrated circuits with a high degree of integration. The goal is to increase the productivity of the process of manufacturing a free mask for electron and ion-beam systems. The purpose of the invention is achieved by forming a free mask pattern by electroplating nickel onto an auxiliary conductor onto a second substrate through a contact mask from a dry film photoresist, and the pattern of a contact mask is obtained using a nuclear filter with a statically distributed pore as a template. The method allows us to simplify the process of forming a free mask pattern while maintaining high resolution and the required thickness of the resulting structure. 7 hp f-ly. fS (L 00 01 to 4 cl
    公开号:SU1352445A1
    申请号:SU827772638
    申请日:1982-09-13
    公开日:1987-11-15
    发明作者:Франк ШМИДТ；Хорст Тырроф
    申请人:Феб Центрум Фюр Форшунг Унд Технологие Микроэлектроник (Инопредприятие)；
    IPC主号:
    专利说明:

    one
    The invention relates to microelectronics and can be used in lithographic operations in the manufacture of templates for semiconductor devices and integrated circuits with a high degree of integration.
    A known method of making a free mask for projection electron and ion beam systems is based on forming a first nickel pattern on an electrically conductive substrate, applying a layer of resist, lithographic shaping of a contact mask, electroplating the nickel pattern and removing the contact mask and the substrate.
    A disadvantage of the known method is the need to repeat the formating operations of the resist masks multiple times, followed by galvanic naranhivaniye coating to obtain a given thickness, which complicates the process and makes it quite long.
    The purpose of the invention is to increase the productivity of the process by simplifying it.
    The essence of the invention is to form open zones in the receiving mask of my free mask with the help of a raster, for the creation of which a template of a nuclear filter type is used. A high-energy beam with a very small dispersion coefficient is used to make the ishblon.
    Example I. A substrate of Riston dry film resistin 5–10 µm thick is sequentially deposited onto a substrate predominantly of silicon or aluminum, a layer of silicon dioxide and a negative electron-resistor layer are applied on top of a substrate. The pattern of a nuclear filter type pattern (a type of “Nucleated Pore with an average distance between pores of the order of 2 µm, a concentration of apertures in the range of 2–810 cm, an inner diameter of apertures in the range of 0.8–1.2 µm) is transferred using an electron beam lithographs into the electron-resistive layer. To expose, the largest raster of the image of the electron-beam setup is chosen (in most cases, 10 microns). The pattern of the mask formed is transferred by the method of plasma-chemical etching into a layer of silicon dioxide. Next, the resist layer is subjected to ion-beam etching through a mask from SUD, with POMOP.1I oxygen ions using the obtained, thus the relief is galvanically increased to the thickness of the riston film the first layer of nickel. Then, a negative electron-resist layer with a thickness of 1-2 microns is applied to the formed pattern in the nickel coating, in which the tonological pattern of the integrated circuit is formed by electron-beam lithography. After conducting the second opera
    2
    By increasing the second thin nickel layer, etching the substrate and removing the dry film residue, a ready-made free mask is obtained for use in
    5 projection lithography.
    If it is required to obtain a drawing with a higher resolution, then ionolithography is used in the formation of the auxiliary mask from silicon dioxide, and molybdenum is used in the form of an ionoresist.
    Example 2. A first layer of nickel with a thickness of about 5 microns is deposited onto a substrate, for example, from silicon or aluminum mini, and then a contact mask is formed lithographically using a nuclear filter type pattern, the pattern of which is etched by an ion beam with a voltage of 1 kV and current density 1 mA / cm is transferred to the nickel layer. At the same time, the current density and voltage should be chosen so as to eliminate shrinkage or decomposition of the contact mask and provide the ratio of the rates of nickel etching and mask 1. In this case, t 54 mm / min is achieved for nickel etching. With the appropriate selection of gas mixtures for etching it
    25
    the ratio can be optimized so that only minor mask residues are preserved without substantially etching the surface of the substrate. After removing the remnants of the contact buck by means of plasma etching or continuous ion-beam etching, a photoresist or electronic is applied to this lattice (honeycomb) structure, the resist and pattern is transferred onto the resist layer using photo- or ion-beam lithography.
    25 After the usual appearance and replenishment, galvanic deposition of the second nickel layer with a thickness of approximately 5 μm is carried out. After removing the resist and the substrate, a free mask is obtained.
    Example 3. Described in example 1 struk40
    The tour on the substrate is subjected, after the application of the nuclear filter type, to such a treatment that the holes created by the nuclear radiation melt and that the substrate of the template material remains on the substrate.
    d5 with a diameter of about 1 micron. Then, the first nickel layer about 5 microns thick is applied by electroplating, so that a smooth surface is formed (a network of nickel with pads). Next, a photoresist or an electronic resist is applied, with the structure
    50 rounds of drawings are transferred according to the above method. After galvanic deposition of the second nickel layer, the substrate and the remains of the template are removed in accordance with Example 2.
    55
    权利要求:
    Claims (8)
    [1]
    1. A method of making a free mask for projection electron and ion beam systems, including forming a first nickel pattern on an electrically conductive substrate, applying a resist layer, lithographically forming a contact mask, electroplating a second nickel pattern, and removing the contact mask and the substrate, characterized by that, in order to increase the productivity of the process, when forming the first nickel pattern, a nuclear filter type template with statistically distributed pores, diameter sootnoschenie which satisfies P / M 0.05-0.2 (m), where M - masschtab reduction projection system, wherein the average distance between the pores is not more than 0.2 M (micrometers).
    [2]
    2. A method according to claim 1, characterized in that the formation of the first nickel pattern is carried out by electroplating it onto a substrate through a contact mask, the contact mask being made from a dry film photoresist.
    [3]
    3. Sp, specifically according to claim 2, characterized in that the contact mask is made using an auxiliary mask of a layer of silicon dioxide by ion-beam etching of a dry film photoresist ion. Editor M. Andrushenko Order 5273/46
    VNIIPI USSR State Committee for Inventions and Discoveries
    113035. Moscow, Zh-35, Raushsk nab. 4/5 Production and Printing Enterprise, Uzhgorod, ul. Project, 4
    oxygen, after which the auxiliary mask is removed.
    [4]
    4. A method according to claim 3, characterized in that the auxiliary mask is formed by electrolithography using a negative electron-resistor by selective etching.
    [5]
    5. A method according to claim 3, characterized in that the pattern of the auxiliary mask is formed by ion-beam lithography using molybdenum as a negative ion-recession.
    [6]
    6. The method according to claim 2, wherein that the contact mask is formed by superimposing a type of nuclear filter on the substrate and bombarding it with a stream of nuclear particles to form areas of a template material with an average diameter in the range of 0.1-1.5 microns.
    [7]
    7. Method according to claim 1, characterized in that the formation of the first nickel pattern is brought about by ion beam etching of the layer through a nuclear filter type pattern.
    [8]
    8. Method according to paragraphs. 1.2 and 7, characterized in that the first nickel pattern is formed with a thickness not exceeding 10 times the thickness of the second pattern.
    five
    Compiled by A. Khokhlov
    Tehred I. VeresKorrektor I. Erdein
    Circulation 421 Subscription
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    同族专利:
    公开号 | 公开日
    FR2515373B1|1985-04-12|
    DE3232174A1|1983-04-21|
    CS245264B1|1986-09-18|
    US4497884A|1985-02-05|
    DD206924A3|1984-02-08|
    CS707682A1|1985-06-13|
    GB2107618A|1983-05-05|
    FR2515373A1|1983-04-29|
    JPS5875837A|1983-05-07|
    GB2107618B|1985-07-10|
    引用文献:
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    FR2047340A5|1969-05-05|1971-03-12|Gen Electric|
    DE2512086C3|1975-03-19|1978-11-30|Siemens Ag, 1000 Berlin Und 8000 Muenchen|Process for the production of self-supporting, thin metal structures|US5310674A|1982-05-10|1994-05-10|Bar-Ilan University|Apertured cell carrier|
    US5272081A|1982-05-10|1993-12-21|Bar-Ilan University|System and methods for cell selection|
    US4772540A|1985-08-30|1988-09-20|Bar Ilan University|Manufacture of microsieves and the resulting microsieves|
    ATA331285A|1985-11-13|1988-11-15|Ims Ionen Mikrofab Syst|METHOD FOR PRODUCING A TRANSMISSION MASK|
    DE10137493A1|2001-07-31|2003-04-10|Heidenhain Gmbh Dr Johannes|Method for producing a self-supporting structure which can be irradiated electron-optically and structure produced using the method|
    FR2936361B1|2008-09-25|2011-04-01|Saint Gobain|PROCESS FOR PRODUCING AN ELECTROCONDUCTIVE SUBMILLIMETRIC GRID, ELECTROCONDUCTIVE SUBMILLIMETRIC GRID|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    DD23377381A|DD206924A3|1981-10-01|1981-10-01|METHOD FOR PRODUCING A FREE-SPACING DISTANCE MASK|
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