• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The grinding process of SAPPHIRE WAFLE, in which the product is placed on the machine table, and processed by the periphery of the grinding wheel, is characterized in that, in order to reduce the curvature of the ground wafer, the abrasive particles of the tool are moved in the direction of tilting the sapphire wafer layers with a deviation of no more than i 35. N & e
    公开号:SU1127526A3
    申请号:SU813358451
    申请日:1981-11-16
    公开日:1984-11-30
    发明作者:Като Итиро；Сузуки Сигеказу
    申请人:Токио Сибаура Денки Кабусики Кайся；Тосиба Керамикс Ко,Лтд (Фирма)；
    IPC主号:
    专利说明:

    This invention relates to methods for grinding single crystal sapphire wafers used in semiconductor devices. Single-crystal sapphires have a hexagonal crystal structure. The surface of the sapphire wafer is usually ground by fixing the wafers in the waffle holder, together with the latter, linear reciprocating motion of the rotating grinding wheel. The orientation of the wafer is chosen so that the orientation face is parallel to the direction of grinding. An arbitrary orientation of the cut relative to the direction of grinding is also used. However, sapphire wafers, ground by these methods, often turn out to be generally markedly curved, which leads to various difficulties when installing semiconductor devices on them, in particular, a displacement of the mask occurs. The aim of the invention is to reduce the curvature of ground polished waffles. To achieve this goal, the wafer mounted on the table of the machine is machined with the periphery of the grinding wheel in such a way that the tool particles move in the direction of inclination of the sapphire wafer layer with a deviation of i 35. FIG. 1 shows the structure of a sapphire wafer; in fig. 2-4 - the nature and magnitude of the curvature of the wafer when grinding it in different directions; in fig. 5 shows the directions for grinding wafers when performing experiments; in fig. 6 shows the relationship between the direction of grinding and the amount of curvature, in FIG. 7-9 options for grinding sapphire wafers Sapphire wafers for semiconductor devices are made such that A number of planes 1 (Fig. 1) of the atomic lattice is oriented parallel to and across the wafer at an angle of 57.6 ° to the flat surface 2. The boundaries of one of these planes 1 are indicated by the position 3. If we count the planes 1 as layers, then the direction indicated in FIG. Г arrow A, indicates the direction in which the layers are usually inclined to the plane 2. In the future, this direction will be called the normal direction of the inclination of the layers, which also implies the directions deflected from arrow A at 135 ° angles. For convenience, the directions deflected from the arrow A at a large angle will be called opposite to the inclination of the layers. During processing, if the particles of the rotating grinding wheel move in the direction of the normal inclination of the layers, the wafer curvature is minimal. To confirm this, the samples of sapphire wafers were ground in the usual direction, parallel to the orienting face, i.e. in the direction oriented at an angle of 45 to the direction of the normal inclination of the layers, in the direction of the inclination of the layers and in the direction opposite to the direction of the inclination of the layers. The curvature of the ground wafer samples was measured from the back of the wafer. In those cases when the wafer was polished in the usual direction (Fig. 2), its curvature reached 75 microns. In addition, the wafer acquired an irregular shape. This disadvantage seems to be related to the fact that grinding was performed in the direction opposite to the inclination of the layers, which resulted in noticeable damage to the wafer and the appearance of microcracks of great depth and density, as well as significant residual stresses. when the samples were polished in the direction opposite to the normal inclination of the layers (Fig. 3), the wafer deflection reached 80 microns, although the shape of the curvature was not irregular, as in the previous version. If the sapphire wafer samples were ground in the direction of the normal inclination of the layers (Fig. 4), the deflection of the ground sapphire wafer was much smaller (40 µm) than in the two previous cases. In addition, the wafer did not have an irregular shape. Samples of sapphire wafers were also polished in nine directions, indicated by letters of the Latin alphabet from e to m (Fig. 5). A comparison was made of the curvature values of ground sapphire wafers. FIG. 5 arrow A shows directions-. normal inclination of layers. There were nine samples of sapphire wafers with a thickness of 235 microns and nine specimens with a thickness of 350 microns. The results are shown in FIG. 6. It can be seen that when grinding is performed in the direction of normal tilting of the layers (in directions e and f), the wafer deflection is noticeably less than when grinding in the direction opposite to the tilt of the layers. Accordingly, wafers with the least deflection are obtained by grinding in the direction of the normal inclination of the layers. To solve the method, the safire wafer holder 5 is placed on the work table 6 and is driven in a straight-forward reciprocating motion in the direction indicated by the arrow. E. A saffire wafer 5 is pressed against the surface of the wafer holder 4 in this way; so that the particles of the rotating grinding stone move at a certain angle to the normal inclination of the layers of sapphire wafer 5. The grinding wheel 7 rotating in the direction of the arrow F is brought into contact with the surface of the wafer 5. Since the wheel 7 rotates at a much higher speed than the speed of the linear return - by the obtuse movement of the wafperdergate 4, the parts of the circle 7 always twist in the direction of the normal inclination of the layers of sapphire wafer 5, irrespective of whether the wafer is displaced from or towards the circle. The sapphire wafer 5 can be attached to the holder with a 4 vacuum. 64 FIG. 8 shows another embodiment of this method in which several wafers 5 can be ground simultaneously. And in this case all the sapphire wafers are fixed on the working table 8 so that the particles of the rotating grinding wheel move in the direction of the normal inclination of the layers. At the same time, the approximate flat 9 of each sapphire wafer 5 is located at an angle of 45 ° to the direction of grinding. FIG. 9 shows an example of processing sapphire waffie 5 with two circles. The upper plane of the wafer is processed by a conical grinding wheel 10, and the lower by a flat grinding wheel 11. In this case, the conical circle must have a sufficiently long generatrix, and the sapphire wafer is installed at a point remote from the top of the circle. Then it can be considered that the forming circle tO moves parallel to the surface of the sapphire wafer 5. The forming conical circle 10 should move in the direction of the normal inclination of the layers of sapphire wafer 5. Then the bottom plane 5 will be ground in the direction of the normal inclination of the flat circle. The third embodiment of the proposed method allows simultaneously grinding both planes with sapphire wafers in the direction of the normal inclination of the layers.
     WOO fpOHUt HO fftint / ft Orientation / s. tS 4 Normals Angle I nvema I new MO / r0ef / ffw / e ftaMKtwr ISOfi 235Mj (fL 90 (pui.S HcHffpHCfffbwe value Mff loaded granite WMU H (rtjpaefff i90 Hue I like $ obliquely inclined
    权利要求:
    Claims (1)
    [1]
    METHOD FOR GRINDING A Sapphire Wafer, in which the product is installed on the machine table, and the processing is carried out by the periphery of the grinding wheel, characterized in that, in order to reduce the curvature of the polished wafer, the abrasive particles of the tool are moved in the direction of inclination of the sapphire wafer layers with a deviation of not more than £ 35.
    类似技术:
    公开号 | 公开日 | 专利标题
    SU1127526A3|1984-11-30|Method of grinding sapphire wafer
    US4663890A|1987-05-12|Method for machining workpieces of brittle hard material into wafers
    KR970009861B1|1997-06-18|Method of manufacturing a semiconductor wafer
    US4344260A|1982-08-17|Method for precision shaping of wafer materials
    US4896459A|1990-01-30|Apparatus for manufacturing thin wafers of hard, non-metallic material such as for use as semiconductor substrates
    EP0039209B1|1985-03-20|Machine for grinding thin plates such as semiconductor wafers
    US5177908A|1993-01-12|Polishing pad
    US4445300A|1984-05-01|Method for grinding flat plates
    US4054010A|1977-10-18|Apparatus for grinding edges of planar workpieces
    TWI416653B|2013-11-21|Semiconductor wafer and processing method for same
    US5295331A|1994-03-22|Method of chamfering semiconductor wafer
    EP0439124A2|1991-07-31|Polishing pad with uniform abrasion
    US4084354A|1978-04-18|Process for slicing boules of single crystal material
    JPH07205001A|1995-08-08|Wafer chamfering machine
    EP0849039B1|2002-04-10|Lapping apparatus and lapping method
    EP0396326B1|1997-02-12|Method of processing substrate for semiconductor device
    JP2000031099A|2000-01-28|Fabrication of semiconductor wafer
    US5259149A|1993-11-09|Dicing blade hub and method
    JP2636383B2|1997-07-30|Wafer processing method
    CN109571232B|2020-05-19|Wafer grinding method and grinding system thereof
    JP2564223B2|1996-12-18|Cutout grinding tool and cutout grinding method for donut type substrate
    JPH07156050A|1995-06-20|Wafer chamfering machine
    GB2256822A|1992-12-23|Rounding off the edges of semiconductor discs
    GB2149330A|1985-06-12|Machining of workpieces consisting of brittle/friable materials
    KR20170087300A|2017-07-28|Edge grinding apparatus
    同族专利:
    公开号 | 公开日
    JPS632735B2|1988-01-20|
    JPS5789551A|1982-06-03|
    US4662124A|1987-05-05|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    DE1918347A1|1969-04-11|1970-10-29|Ernst Fr Weinz Fa|Control unit for grinding a single crystal|
    DE2809274A1|1978-03-03|1979-09-13|Wacker Chemitronic|PROCESS FOR COMPARISON OF POLISHING REMOVAL FROM DISCS DURING POLISHING|JPS60155358A|1984-01-23|1985-08-15|Disco Abrasive Sys Ltd|Method and device for grinding surface of semiconductor wafer|
    US5624501A|1995-09-26|1997-04-29|Gill, Jr.; Gerald L.|Apparatus for cleaning semiconductor wafers|
    EP0792955B1|1996-02-29|2002-08-14|Kyocera Corporation|Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same|
    US5827111A|1997-12-15|1998-10-27|Micron Technology, Inc.|Method and apparatus for grinding wafers|
    US5827112A|1997-12-15|1998-10-27|Micron Technology, Inc.|Method and apparatus for grinding wafers|
    JP3628554B2|1999-07-15|2005-03-16|株式会社日鉱マテリアルズ|Sputtering target|
    JP2005205542A|2004-01-22|2005-08-04|Noritake Co Ltd|Sapphire polishing grinding wheel and sapphire polishing method|
    JP4918229B2|2005-05-31|2012-04-18|信越半導体株式会社|Manufacturing method of bonded wafer|
    JP5681418B2|2010-09-08|2015-03-11|株式会社ディスコ|Processing method|
    CN102886716B|2011-07-19|2016-02-24|上海汇盛无线电专用科技有限公司|Sapphire ingot face grinding machine|
    US10052848B2|2012-03-06|2018-08-21|Apple Inc.|Sapphire laminates|
    US9221289B2|2012-07-27|2015-12-29|Apple Inc.|Sapphire window|
    US9232672B2|2013-01-10|2016-01-05|Apple Inc.|Ceramic insert control mechanism|
    JP6151529B2|2013-02-19|2017-06-21|株式会社ディスコ|Grinding method of sapphire wafer|
    US9678540B2|2013-09-23|2017-06-13|Apple Inc.|Electronic component embedded in ceramic material|
    US9632537B2|2013-09-23|2017-04-25|Apple Inc.|Electronic component embedded in ceramic material|
    US9154678B2|2013-12-11|2015-10-06|Apple Inc.|Cover glass arrangement for an electronic device|
    US9225056B2|2014-02-12|2015-12-29|Apple Inc.|Antenna on sapphire structure|
    US10406634B2|2015-07-01|2019-09-10|Apple Inc.|Enhancing strength in laser cutting of ceramic components|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    JP16167780A|JPS632735B2|1980-11-17|1980-11-17|
    [返回顶部]