• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Abstract The present invention relates to using spin transfer torque underneath a nanocontact on amagnetic thin film with perpendicular magnetic anisotropy (PMA), provides generation ofdissipative magnetic droplet solitons and magnetic droplet-skyrmions and report on their richdynamical properties. Micromagnetic simulations identify the conditions necessary tonucleate and drive droplet-skyrmions over a wide range of currents and fields. Micromagneticsimulations also demonstrate how droplets and droplet-skyrmions can be used as skyrmioninjectiors and detectors in skyrmion-based magnetic memories. The droplet-skyrmion can becontrolled using both current and magnetic fields, and is expected to have applications in spintronics, magnonics, skyrmionics, and PMA-based domain-wall devices. Fig. 1'A 19
    公开号:SE1450442A1
    申请号:SE1450442
    申请日:2014-04-09
    公开日:2015-10-10
    发明作者:Johan Åkerman
    申请人:Nanosc Ab；
    IPC主号:
    专利说明:

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    权利要求:
    Claims (20)
    [1] 1. A spin oscillator device (1) comprising a spin oscillator (2) having a magnetic film (3) with perpendicular magnetic anisotropy; and; characterised in that the spin oscillator device (1) comprises means (4) configured to generate magnetic droplet solitons skyrmions (5), wherein the means (4) is configured to control the droplet skyrmionss-solitons (5) by means of applying current (I) and/or magnetic (.(OH) fields, wherein the spin oscillator (2) is a spin torque oscillator, STO, wherein a nano-contact, NC, (6) is provided on the magnetic film (3) providing a "NC-STO" (2, 6), wherein the means (4) is configured to apply spin transfer torque, STT, underneath the NC (6).
    [2] 2. The spin oscillator device (1) according to claim 1, wherein the spin oscillator (2) is a spin torque oscillator, STO, wherein a nano-contact, NC, (6) is provided on said magnetic film (3) providing an NC-STO (2, 6), and the means (4) are configured to apply spin transfer torque underneath the NC (6).
    [3] 3. The spin oscillator device (1) according to claim 1, wherein the spin oscillator (2) is based on a spin Hall Effect.
    [4] 4. The spin oscillator device (1) according to claim 2, wherein the means (4) is configured to control the droplets sokens-skyrrnions (5) by means of applying current (I).
    [5] 5. The spin oscillator device (1) according to claim 2, wherein the means (4) is configured to control the droplets sokons•skyrmions (5) by means of magnetic (11.0H) fields.
    [6] 6. The slain osoillaton device according -to any ene of the siaims 1-2, or 4 5, wherein the NCSTO -(2, -6) -is- based- on- o-r-thogenal--psesdes-pin--valve-st-ask-s,
    [7] 7. 6. The spin oscillator device according to any one of the claims 2, or 4-5, wherein the NC-STO (2, 6) is based on perpendicular pseudospin valve stacks. The spin oscillator device according to any one of the claims 2, or 4-5, wherein the NCSTO (2, 6) is based on tilted pseudospin valve stacks.
    [8] 8. The spin oscillator device according to any one of the claims 1-2, or 4-5, wherein the NCSTO (2, 6) is based on orthogonal pseudospin valve stacks.
    [9] 9. The spin oscillator device according to any one of the claims 2, or 4-5, wherein the NCSTO (2, 6) is based on tilted pseudospin valve stacks where the tilt angle is non-uniform.
    [10] 10. The spin oscillator device according to any one of the claims 2, or 4-5, wherein the NCSTO (2, 6) is based on a magnetic tunnel junction, MTJ.
    [11] 11. The spin oscillator device according to any one of the claims 2, or 4-5, wherein the NCSTO (2, 6) is based on a combination of pseudospin valves and -magnetic tunnel junctions, MTJ.
    [12] 12. The spin oscillator device according to claim 8, wherein the tilted pseudospin valve stacks are made by layers having different crystalline characteristics.
    [13] 13. The spin oscillator device according to claim 8, wherein the tilted pseudospin valve stacks are made by two or more layers tilted at different angles.
    [14] 14. The spin oscillator device according to claim 1-13, wherein any of the magnetic properties have a spatial variation in any lateral direction.
    [15] 15. The spin oscillator device according to claim 144, wherein a microwave current, or microwave field, or a combination of microwave current and field, at nominally the same frequency as the spin oscillator device is provided in'ected so as to improve the intrinsic microwave signal of the spin oscillator device.
    [16] 16. The spin oscillator device according to claim 144, wherein a microwave current, or microwave field, or a combination of microwave current and field, at nominally any higher harmonic, or fractional harmonic, or lower sub-harmonic of the frequency of the spin oscillator device is provided injected so as to improve the intrinsic microwave signal of the spin oscillator device.
    [17] 17. The spin oscillator device according to claim 15-16, wherein the provided microwave current and/or field is originally generated by the spin oscillator device so as to provide feedback of the spin oscillator device onto itself.
    [18] 18. The spin oscillator device according to claim 1, wherein a magnetic field or a current modulates the operating point of the spin oscillator device.
    [19] 19. The spin oscillator device according to claim 18, wherein the modulating magnetic field or current modulates the operating point across the nucleation point of the magnetic droplet soliton.
    [20] 20. The spin oscillator device according to claim 1, where the spin oscillator device is employed for frequency shift keying. Use of a device according to any one of the claims 1-20 in one or more of: spintronics, magnonics, hard disk drives (reading head) or domain-wall devices 1/12 Insu- Nano-contact lator5 - 500 nm Cap 1r (Active Magnetic LAayAer11/1: ,,,,,,,,,,,,,,,„ Spacer /VVV‹ Polarizing Fixed Layer Base Electrode 8 9 3 7 A A AA. A A Active Magnetic Layer Cap Layer '8 3 Spacer Polarizing Fixed Layer Base Electrode FIG. VAFIG. l'B n4 he, /7 / / 1/2/ /I / / ------ --1.,,..• Cci -4 ( ter PO 4/4 Z_ A f .,e/ 4 j:i4Ce etrcA k, < pi 4 "/- . hili4 ee4e,ke 6 po /7,c-e f(A 3 3/ Insu-Nano-contact lator5 - 500 nm A r11Pr Polarizing Fixed Layer VV A11.,A Base Electrode Cap Layer Active Magnetic Layer Ground Contact Spacer
    1. ■■ FIG. I'D Ground Contact lnsu- Nano-conta lator 5 - 500 nrr Cap Layer Active Magnetic L Spacer ■ Polarizing Fixed L Base Electrod FIG. 'PE Ground Contact = MI FIG. IF Ground Contact lnsu- Nano-contact lator 5 - 500 nm Cap Layer AA A A A A ,Active Magnetic Layer /X///,,,,■7N/ Tr. Spacer Polarizing Fixed Layer Base Electrode 6/6 at = 0.09 t2 = 0.11t3= 0.29 14=0.315 t = 1.293 t= 1'296 t7= 1'298 tEs= 1'363 t= 1.555 1= 2.128 1
    0. 5 E" rr 1, - dIh6let I droplet-skyrmion 1i ,, .• static skyrmion It 1 dropleakyiimion i,1 ,...,_..."--.........._,.._,_"....., static skyrmion I 1 static shirmion- I11 - 11liI ,,1 I,11t
    0. 20.40.60.811.21.4 Time (ns)
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    法律状态:
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    US15/303,063| US10615748B2|2014-04-09|2015-04-02|Spin oscillator device|
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