• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present disclosure is a method for manufacturing a device including chip (102) ultrasonically bonded via bump (104) and board (106) facing chip (102). The method for manufacturing a device includes a step of measuring a change in resistance value of each of a plurality of sensors (107) when bump (104) provided on chip (102) is mounted on board (106) where the plurality of sensors (107) are embedded directly below board electrode (105) on which bump (104) is pressed and a step of estimating a bonding surface of bump (104) on board electrode (105) based on the change in resistance value. As a result, the amount of deviation of a mounting position of chip (102) on board (106) can be calculated accurately.
    公开号:NL1044041A
    申请号:NL1044041
    申请日:2021-05-26
    公开日:2021-12-13
    发明作者:Sakurai Daisuke；Itoi Kiyokazu；Ikuta Keiko
    申请人:Panasonic Ip Man Co Ltd；
    IPC主号:
    专利说明:

    [110] [110] or [11(-)0]. The value in [] above is the Miller index for describing a crystal surface or a direction in a crystal lattice. With this configuration, semiconductor 511 has the maximum gauge ratio with respect to the strain in the direction in which the mounting load is applied. The main component of the measured change in resistance value AR depends on the compression strain (vertical strain £z).
    [001] [001] in the direction in which the mounting load is applied and a crystal orientation of
    [110] [110] or [11(-)0] in vibration direction D. In this case, device manufacturing apparatus 401 of Exemplary Embodiment 4 preferably includes electric wiring 418 for measuring a resistance value having a crystal orientation of [110] or [11(-)0]. With this configuration, semiconductor 512 has the maximum gauge ratio with respect to the plane strain in vibration direction D. The main component of the measured change in resistance value AR depends on plane strain ex in vibration direction D. In the ultrasonic mounting step, the change in resistance value of semiconductor 511 shows substantially the same tendency (including the same tendency) as the change in compression strain (vertical strain €z). Therefore, in the above equation (5) or equation (6), instead of constant value £z, of vertical strain €z, the resistance change ratio AR/RO when the resistance value becomes constant is used, and instead of constant value €'z4 of vertical strain €z, the amount of change in resistance value AR'/R'0 when bonding surface S' is obtained is used. As a result, processor 415 can estimate bonding surface S in the ultrasonic mounting step.
    In the ultrasonic mounting step, the change in resistance value of semiconductor 512 shows substantially the same tendency (including the same tendency) as the change in plane strain ex in the vibration direction. Therefore, processor 415 can estimate the degree of progress of the bonding of bonding surface S based on the change in amplitude Ax of the resistance value of semiconductor
    512.
    That is, according to device manufacturing apparatus 401 and the inspection method of device manufacturing apparatus 401 of Exemplary Embodiment 4, similar to Exemplary Embodiment 3, it is possible to non-destructively inspect the quality of the bonding state in the ultrasonic mounting step.
    According to device manufacturing apparatus 401 and the inspection method of device manufacturing apparatus 401 of Exemplary Embodiment 4, semiconductor 511 and semiconductor 512 are used as sensors. Thereby, for example, the number of electric wirings 418 can be reduced to less than half as compared with the case of using a general strain gauge shown in a non-patent document ("Strain gauge wiring method" https://www.kyowa-ei.com/jpn/technical/strain_gages/wiring.html: searched on April 6, 2020). Since a circuit for strain conversion is not required, measurer 413 can be simplified.
    权利要求:
    Claims (19)
    [1]
    A method of manufacturing a device, the device comprising a chip and a printed circuit board facing the chip, the chip being ultrasonically bonded via a bump, the method comprising: a step of measuring a change in resistance value from each of a plurality of sensors when the bump provided on the chip is placed on the printed circuit board, the plurality of sensors being inserted directly below an electrode on which the bump is printed; a step of estimating a bonding area of the bump to the electrode in accordance with the change in the resistance value; and a step of determining a quality of a bonding state between the chip and the printed circuit board in accordance with the estimated bonding plane.
    [2]
    The method of manufacturing a device according to claim 1, further comprising: a step of estimating an overlap area between the interface area of the bump to the electrode and each of the sensors in accordance with the change in the resistance value; a step of estimating a contour of the bonding plane from the overlap area; a step of obtaining a center of the bonding plane from the contour of the bonding plane; and a step of calculating a degree of positional deviation between the center of the bonding face and a center of the electrode.
    [3]
    The method of manufacturing a device according to claim 1, wherein each of the sensors is a piezoresistive type sensor in a rectangular shape.
    [4]
    The method of manufacturing a device according to claim 1, wherein the sensors comprise a plurality of piezoresistive type sensors arranged linearly apart from each other.
    [5]
    A method of fabricating a device comprising a chip that is ultrasonically bonded via a bump and a printed circuit board facing the chip, the method comprising:
    a step of measuring a first voltage value and a second voltage value when the chip is ultrasonically bonded to the printed circuit board, whereupon a first voltage detector mounted on the printed circuit board detects the first voltage value in a direction towards the chip and the printed circuit board, and a second voltage detector provided on the printed circuit board and detecting the second voltage value in a direction perpendicular to the chip and printed circuit board direction; a step of estimating a change in the shape of the bump in accordance with the first voltage value; a step of estimating a state of a bonding interface between an electrode provided on the chip or the printed circuit board and the bump in accordance with the second voltage value; and a step of determining a quality of a connection state between the chip and the printed circuit board according to the estimated change in the shape of the bump and the state of the connection interface.
    [6]
    The method of manufacturing a device according to claim 5, wherein the first voltage detector and the second voltage detector are inserted into the printed circuit board.
    [7]
    A device manufacturing method according to claim 5, wherein the first voltage detector and the second voltage detector are provided on a side of the electrode provided on the printed circuit board opposite the side of the bump.
    [8]
    The method of manufacturing a device according to claim 7, wherein the first voltage detector and the second voltage detector are arranged directly below the electrode provided on the printed circuit board.
    [9]
    The method of manufacturing a device according to claim 6, wherein the first voltage detector is inserted near a center of a bonding pad between the electrode and the bump before an ultrasonic bonding step is initiated or immediately after the ultrasonic bonding step is initiated.
    [10]
    The method of manufacturing a device according to claim 9, wherein an area of the first voltage detector is smaller than an area of the bonding pad between the electrode and the bump obtained from a result of the ultrasonic bonding step.
    [11]
    The device fabrication method of claim 5, wherein the first voltage detector is configured with a semiconductor made of n-type Si and which estimates the change in the shape of the bump, and the second voltage detector is configured with a semiconductor which is made of p-type Si and which estimates the state of the bonding interface.
    [12]
    A device for manufacturing a device comprising: a platform holding a printed circuit board bumped to a chip; a connector head that applies ultrasonic vibrations to the chip as the chip is pressed toward the printed circuit board; a measuring device that measures a change in resistance value of each of a plurality of sensors when the on-chip bump is mounted on the printed circuit board, the plurality of sensors placed directly below an electrode on which the bump is pressed; and a processor estimating a state of a bonding plane of the bump on the electrode in accordance with the change in the resistance value.
    [13]
    The device manufacturing apparatus of claim 12, wherein the processor estimates an overlap area between the pad bonding surface of the bump to the electrode and each of the sensors in accordance with the change in the resistance value, estimates from the overlap region a contour of the bond pad , obtains a center of the bonding face from the contour, and calculates a degree of positional deviation between the center of the bonding face and a center of the electrode.
    [14]
    The device manufacturing apparatus according to claim 12, wherein each of the sensors is a piezoresistive type sensor in a rectangular shape.
    [15]
    A device manufacturing apparatus according to claim 12, wherein the sensors comprise a plurality of piezoresistive type sensors arranged linearly apart from each other.
    [16]
    A device manufacturing apparatus, comprising: a platform holding a printed circuit board bumped to a chip; a connector head that applies ultrasonic vibrations to the chip as the chip is pressed toward the printed circuit board; a measuring device which measures two voltages in accordance with an output of a first voltage detector mounted on the printed circuit board and detecting a voltage in a first direction which is a direction in which the platform and the connection head face each other, and an output of a second voltage detector, which is incorporated in the printed circuit board and detects a voltage in a second direction perpendicular to the first direction; and a processor that determines a quality of a bonding state between the chip and the printed circuit board in accordance with the measurement result of the measurement device.
    [17]
    The device manufacturing apparatus of claim 16, wherein the first voltage detector and the second voltage detector are incorporated in the printed circuit board.
    [18]
    An attachment structure comprising: a chip having a plurality of bumps; a printed circuit board having a plurality of printed circuit board electrodes; and a plurality of sensors disposed below the printed circuit board electrode, the plurality of sensors being radially arranged with respect to a center of the one printed circuit board electrode.
    [19]
    A mounting structure, comprising: a chip having a plurality of bumps; a printed circuit board having a plurality of printed circuit board electrodes; and a plurality of sensors disposed below the printed circuit board electrode, one of the plurality of sensors being a vertical voltage sensor disposed in the center of the printed circuit board electrode, and one of the plurality of sensors being a planar voltage sensor arranged around the vertical voltage sensor is installed.
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    同族专利:
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    CN113745122A|2021-12-03|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    JP3599003B2|2001-07-05|2004-12-08|松下電器産業株式会社|Bonding damage measurement method|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    JP2020093359A|JP2021190527A|2020-05-28|2020-05-28|Inspection method for device manufacturing apparatus, and device manufacturing apparatus|
    JP2020133003A|JP2022029624A|2020-08-05|2020-08-05|Device manufacturing equipment inspection method and device manufacturing equipment|
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