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    公开号:NL1036597A1
    申请号:NL1036597
    申请日:2009-02-18
    公开日:2009-09-01
    发明作者:Arie Jeffrey Den Boef
    申请人:Asml Netherlands Bv；
    IPC主号:
    专利说明:

    METROLOGY METHOD AND APPARATUS, LITHOGRAPHIC APPARATUS, AND DEVICE MANUFACTURING METHOD
    FIELD
    [0001] The present invention relates to methods and apparatus for metrology usable, for example, in the manufacture of devices by lithographic techniques and to methods of manufacturing devices using lithographic techniques.
    BACKGROUND
    A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g., including part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the "scanning" direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
    In lithographic processes, it is desirable to frequently create measurements of the structures created, e.g., for process control and verification. Various tools for making such measurements are known, including scanning electron microscopes, which are often used to measure critical dimension (CD), and specialized tools for measuring overlay, the accuracy of alignment or two layers in a device. Recently, various forms of scatterometers have been developed for use in the lithographic field. These devices directly a beam of radiation onto a target and measure one or more properties of the scattered radiation - e.g., intensity at a single angle of reflection as a function of wavelength; intensity at one or more wavelengths as a function of reflected angle; or polarization as a function of reflected angle - to obtain a "spectrum" from which a property or interest of the target can be determined. Determination of the property of interest may be performed by various techniques: e.g. reconstruction of the target structure by iterative approaches such as rigorous coupled wave analysis or finite element methods; library searches; and principal component analysis.
    In currently available scatterometers, the target is relatively large, e.g., 40pm by 40pm, grating and the measurement beam generates a spot that is narrower than the grating (i.e., the grating is underfilled). This simplifies reconstruction of the target as it can be viewed as infinite. However, it would be desirable to reduce the size of the target, e.g. to 10pm by 10pm or even 5pm by 5pm, in order that it could be positioned in amongst product features, rather than in the scribe lane. Placing the target in among the product features increased accuracy of measurement because the narrower target is affected by process variations in a more similar way to the product features and because less interpolation may be needed to determine the effect of a process variation at the current feature site .
    However, in order to reduce the target size, it is desirable to reduce a corresponding size of the measurement spot, which is limited by diffraction effects and the positioning accuracy of the stage carrying the substrate being measured and therefore it is desirable to substantially modify and / or redesign an existing metrology device.
    SUMMARY
    It is desirable to provide an improved metrology device, e.g., that can make measurement on a smaller target.
    According to an aspect of the invention, there is provided a metrology apparatus configured to measure a property or a target on a substrate, the apparatus including a first source configured to emit a first illumination beam of radiation; a second source configured to emit a second illumination beam of radiation; a beam selection device configured to select one of the first and second illumination beams as a measurement beam of radiation; an objective lens configured to direct the measurement beam onto the target on the substrate and to collect radiation diffracted by the target; a sensor configured to detect an angle resolved spectrum in a pupil plane or the objective lens.
    According to an aspect of the invention, there is provided a lithographic apparatus including: an illumination optical system arranged to illuminate a pattern; a projection optical system arranged to project an image of the pattern on a substrate; and a metrology device configured to measure a property of a target on the substrate, the device including a first source configured to emit a first illumination beam of radiation; a second source configured to emit a second illumination beam of radiation; a beam selection device configured to select one of the first and second illumination beams as a measurement beam of radiation; an objective lens configured to direct the measurement beam onto the target on the substrate and to collect radiation diffracted by the target; a sensor configured to detect an angle resolved spectrum in a pupil plane or the objective lens.
    [0009] According to an aspect of the invention, there is provided a method of measuring a property of a target on a substrate, the method including: generating at least one of a first or second illumination beam, the first and second illumination beams differing in at least one of spatial extent and range of angles; selecting one of the first and second illumination beams as a measurement beam and directing the measurement beam onto the target; collecting radiation diffracted from the marker using an objective lens; detecting an angle-resolved spectrum in a pupil plane or the objective lens.
    LETTER DESCRIPTION OF THE DRAWINGS
    Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which: [0011] Figure 1 depicts a lithographic apparatus according to an embodiment of the invention; Figure 2 depicts a lithographic cell or cluster according to an embodiment of the invention; Figure 3 depicts an angle-resolved scatterometer according to an embodiment of the invention; Figure 4 depicts the radiation sources and beam selection arrangements of the angle resolved scatterometer or Figure 3; Figure 5 depicts one of the radiation sources of Figure 4; Figure 6 depicts a supercontinuous laser; Figure 7 depicts the measurement branches of an embodiment of the invention; and [0018] Figure 8 depicts the radiation sources and beam selection arrangements of an embodiment of the invention.
    DETAILED DESCRIPTION
    Figure 1 schematically depicts a lithographic apparatus LA. The apparatus includes an illumination system (illuminator) IL configured to condition a radiation beam B (eg UV radiation or DUV radiation), a patterning device support or support structure (eg a mask table) MT constructed to support a patterning device (eg a mask ) MA and connected to a first positioner PM configured to accurately position the patterning device in accordance with certain parameters; a substrate table (e.g., a wafer table) WT constructed to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate in accordance with certain parameters; and a projection system PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (eg including one or more dies) of the substrate W. | 0020] The illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination of, for directing, shaping, or controlling radiation.
    The patterning device support holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is hero in a vacuum environment. The patterning device support can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The patterning device support may be a frame or a table, for example, which may be fixed or movable as required. The patterning device support may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms "reticle" or "mask" may be considered synonymous with the more general term "patterning device." The term "patterning device" used should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate . It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
    The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase shift, and attenuated phase shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam, which is reflected by the mirror matrix.
    The term "projection system" used should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the radiation exposure being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term "projection lens" may also be considered as synonymous with the more general term "projection system".
    As depicted here, the apparatus is of a transmissive type (e.g., employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g., employing a programmable mirror array or a type referred to above, or employing a reflective mask).
    The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and / or two or more mask tables). In such "multiple stage" machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
    The lithographic apparatus may also be a type of at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, e.g., water, so-to-fill space between the projection system and the substrate. Liquid immersion may also be applied to other spaces in the lithographic apparatus, for example, between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term "immersion" as used does not mean that a structure, such as a substrate, must be submerged in liquid, but rather only means that liquid is located between the projection system and the substrate during exposure.
    Referring to Figure 1, the illuminator IL receives a radiation beam from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to be part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD including, for example, suitable directing mirrors and / or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
    The illuminator IL may include an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and / or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) or the intensity distribution in a pupil plane or the illuminator can be adjusted. In addition, the illuminator IL may include various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section. {00301 The radiation beam B is incident on the patterning device (e.g., mask) MA, which is hero on the patterning device support (e.g., mask table MT), and is patterned by the patterning device. Having traversed the patterning device (eg mask) MA, the radiation beam B passes through the projection system PS, which is the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF (eg interferometric device, linear encoder, 2-D encoder or capacitive sensor), the substrate table WT can be moved accurately, eg so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in Figure 1) can be used to accurately position the patterning device (eg mask) MA with respect to the path of the radiation beam B, eg after mechanical retrieval from a mask library, or during a scan. In general, movement of the patterning device support (eg mask table) MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM . Similarly, movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the patterning device support (e.g. mask table) MT may be connected to a short-stroke actuator only, or may be fixed.
    Patterning device (e.g., mask) MA and substrate May be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one provided on the patterning device (e.g., mask) MA, the mask alignment marks may be located between the dies. Small alignment markers may also be included within dies, in among the device features, in which case it is desirable that the markers are as small as possible and do not require any different imaging or process conditions than adjacent features. The alignment system, which detects the alignment markers is described further below.
    [0032] The depicted apparatus could be used in at least one of the following modes: 1. In step mode, the patterning device support (eg mask table) MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (ie a single static exposure). The substrate table WT is then shifted in the X and / or Y direction so that a different target portion can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
    2. In scan mode, the patterning device support (e.g., mask table) MT and the substrate table WT are scanned synchronously while a pattern is imparted to the radiation beam is projected onto a target portion C (i.e., a single dynamic exposure). The velocity and direction of the substrate table WT relative to the patterning device support (e.g., mask table) MT may be determined by the (de-) magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) or the target portion in a single dynamic exposure, whereas the length of the scanning motion has the height (in the scanning direction) of the target portion.
    3. In another mode, the patterning device support (eg mask table) MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern is imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array or a type as referred to above.
    Combinations and / or variations on the modes described above or use or entirely different modes or use may also be employed.
    Lithographic apparatus LA is an so-called dual stage type which has two substrate tables WTa, WTb and two stations - an exposure station and a measurement station - between which the substrate tables can be exchanged. While one substrate or one substrate table is being exposed at the exposure station, another substrate can be loaded onto the other substrate table at the measurement station and various preparatory steps carried out. The preparatory steps may include mapping the surface control of the substrate using a level sensor LS and measuring the position of alignment markers on the substrate using an alignment sensor AS. This allows a substantial increase in the throughput of the apparatus. If the position sensor IF is not capable of measuring the position of the substrate table while it is at the measurement station as well as at the exposure station, a second position sensor may be provided to enable the positions of the substrate table to be tracked at both stations.
    As shown in Figure 2, the lithographic apparatus LA forms part of a lithographic cell LC, also sometimes referred to a lithocell or cluster, which also includes apparatus for perform pre-and post-exposure processes on a substrate. Conventionally these include spin coaters SC to deposit resist layers, developers DE to develop exposed resist, chill plates CH and bake plates BK. A substrate handler, or robot, RO picks up substrates from input / output ports I / Ol, 1/02, moves them between the different process apparatus and delivers then to the loading bay LB of the lithographic apparatus. These devices, which are often collectively referred to as the track, are under the control of a track control unit TCU which is itself controlled by the supervisory control system SCS, which also controls the lithographic apparatus via the LACU lithography control unit. Thus, the different apparatus can be operated to maximize throughput and processing efficiency.
    The angle-resolved scatterometer, is shown in Figure 3. In this sensor, the radiation emitted by radiation source unit 2 (described further below) is focused using lens system 12 through filter 13 and polarizer 17, reflected by partially reflective surface 16 and is focused on substrate W via a microscope objective lens 15, which has a high numerical aperture (NA), preferably at least 0.9 and more preferably at least 0.95. Immersion sensors may also have lenses with numerical apertures over 1. Lens system 12 is arranged to provide a desired illumination mode, e.g. annular or conventional, and preferably so that the parameters of that mode, e.g., Omn, ooutcr or σ, are adjustable. The reflected radiation then transmits through partially reflective surface 16 into a detector 18 in order to have the scatter spectrum detected. The detector may be located in the back-projected pupil plane 11, which is at the focal length of the lens system 15, however, the pupil plane may be re-imaged with auxiliary optics (not shown) onto the detector. The pupil plane is a plane in which the radial position of radiation defines the angle of incidence on the substrate and the angular position defines azimuth angle of the radiation. The detector is preferably a two-dimensional detector so that a two-dimensional angular scatter spectrum or the substrate target can be measured. The detector 18 may be, for example, an array or CCD or CMOS sensors.
    A reference beam is often used for example to measure the intensity of the incident radiation. To do this, when the radiation beam is incident on the beam splitter 16 part of it is transmitted through the beam splitter as a reference beam towards a reference mirror 14. The reference beam is then projected onto a different part of the same detector 18.
    The detector 18 may measure the intensity of scattered light at a single wavelength range, or the intensity separately at multiple wavelengths or integrated over a wavelength range. Furthermore, the detector may separately measure the intensity of transverse magnetic and transverse electric-polarized light and / or the phase difference between the transverse magnetic and transverse electric-polarized light.
    The target on substrate May be a marker in the form of a grating. Usually, in scatterometry, the scatterometry data or the target is used to reconstruct it, e.g. using iterative techniques in combination with methods to calculate the scattering or light from periodic structures such as Rigorous Coupled Wave Analysis and Finite Element Methods.
    Alternatively, the iterative methods can be (partly) replaced by a library search or spectra obtained by simulation. However, it is also possible to use techniques such as Principal Component Analysis to obtain information of the property of interest directly from the measured spectra.
    The radiation source unit 2 is shown in more detail in Figure 4. The source includes a first source module 21, which may include a xenon lamp and provides a first illumination beam IB1, and a second source module 22, which provides a second illumination beam IB2. The second source module may include a supercontinuous laser 221 as shown in Figure 5, which directs light into an acousto-optical tunable filter (AOTF) 222 which is used to select a narrow range or wavelengths from the broadband (white light) output of the supercontinuum laser 221 to form the second illumination beam. A beam selection unit 25 in the remainder of the metrology device, depicted MS in Figure 4. Other wavelength selection devices, such as interference filters and dispersive elements (eg gratings and prisms), may be used in place of the acousto-optical tunable filter .
    The acousto-optical tunable filter 222 is shown in more detail in Figure 5 and includes an acousto-optical crystal 2221 to which are connected to a piezoelectric transducer 2222, driven by a high-frequency driver circuit 2223, and an acoustic absorber 2224 Transducer 2222 creates acoustic waves in the crystal 2221 with a wavelength determined by the mechanical properties (speed of sound) or the crystal and driving frequencies. As these waves propagate through the crystal they form a periodic redistribution of the refractive index of the crystal due to the alternating expansion and contraction of the crystal lattice. This forms a diffraction grating which diffracts the light passing through it, although diffraction occurs throughout the region of interaction rather than at a single point and only radiation meeting phase and / or momentum matching conditions is diffracted. The net effect is that radiation of a narrow band or wavelengths is diffracted from the main beam and can be selected by a spatial and / or polarizing filter 2225. The center wavelength of the diffracted beam is dependent on the driving frequency of the transducer so it can be controlled within quite a wide range and very rapidly, dependent on the response time of the driver circuit 2223, the transducer 2222 and the crystal 2221. The intensity of the diffracted beam is also controlled by the intensity of the acoustic waves.
    Suitable materials which can be used for the acoustic optical crystal include: Quartz (S1O2), KDP (KH2PO4), Paratellurite or tellurium dioxide (Te02), LiNbC> 3, calomel or mercuric chloride (Hg2Cl2), TAS (TaaAsSej ) and Te (tellurium), magnesium fluoride (MgF), and sapphire (aluminum oxide, Al 2 O 3). The crystal selected according to the detailed geometry or the acousto-optical tunable filter. If a birefringent crystal is used, the filter may also select a particular polarization state.
    High frequency drive unit 2223 is connected to the control unit CU or the scatterometer which provides a drive signal to cause the transducer to acoustic waves or an appropriate frequency to select a narrow band or wavelengths centered on a desired wavelength, as required for a given measurement. The bandwidth of the transmitted beam is preferably less than 20nm, less than 15nm, less than lnm or less than 5nm. The exact relationship between frequency of drive signal and selected wavelength depends on the particular crystal employed and the geometry of the device. In some cases, by applying a drive signal having two or more components of different frequencies Ωι to fin, the filter can be operated to select a multiple of components each centered around a different wavelength, which forms a polychromatic beam that allows a multiple of measurements to be made simultaneously. The intensities of the different frequency components or the drive signal can be varied to individually control the intensities of the different wavelengths in the polychromatic beam.
    The supercontinuous laser 221 is illustrated in Figure 6. It includes a pulsed laser source 2211 whose output is fed into a non-linear medium 2212, e.g., a photonic crystal fiber. The pulsed source 2211 emits very short pulses, e.g., or femtosecond or picosecond duration, or a narrow band or wavelengths which are spread by the non-linear medium 2212 into a broadband beam of radiation. This type of source can provide a powerful beam with a low diet and a suitable range of wavelengths.
    Outputs of the first and second sources 21, 22 are conveniently led to the beam selection unit 25 by optical fibers 23 and 24. Fiber 23 may include a multimode fiber and fiber 25 may include an endlessly single-mode PM fiber.
    The beam selection unit in this embodiment includes a tilting mirror 254 driven by actuator 255 to select one of the illumination beams IB1, IB2 as the measurement beam MB. The tilting mirror is positioned in a back-projected substrate plane, which is a plane conjugate with the substrate having the target being measured, created by an optical system including a first condensing lens 256. A second condensing lens 253 creates a back-projected pupil plane, that is a plane that is a Fourier transform of the back-projected substrate plane, in which is positioned an aperture plate 252. The aperture plate 252 has two apertures separated by a small distance. In one aperture, a secondary source is formed by a third condensing lens 251 which collects light from the first source 21 output by fiber 23. In the other aperture, the output from the fiber 24, carrying light from second source 22, is located.
    With the above arrangement, the two illumination beams are brought together on the tilting mirror 254, but have different angle of incidence. Thus, by changing the angle of the tilting mirror 254 by only a small amount, e.g. less than 50mrad in an embodiment, one of the illumination beams can be selected and directed along the axis or first condensing lens 256.
    The other beam is directed off-axis and blocked by an aperture stop 257 provided on a further back-projected pupil plane. Aperture stop 257 is preferably provided in a turret or carousel driven by actuator 258 so that a selected one of a variety of apertures can be interposed into the optical path, chosen in accordance with the illumination beam.
    [0051] It will be appreciated that the above embodiment can easily be extended to encompass more than two light sources to provide additional flexibility. For example, multiple monochromatic light sources may be used instead of a super-continuum laser and AOTF to provide a choice of wavelength. The spacing of the multiple sources in the aperture plate 252, the focal lengths of condenser lenses 256 and 253 and the range of movement of the tiltable mirror can be chosen to accommodate the desired number of sources.
    Furthermore, as well as switching between illumination beams IB1, IB2, the tiltable mirror can be used, in combination with an appropriate aperture stop 257, to control the angle of illumination at the wafer. The tiltable mirror may be tiltable about one or two axes. Preferably, to avoid positioning errors, the tiltable mirror pivots about the point of incidence of the illumination beams IB 1, IB2.
    The basic illumination arrangement of the metrology device is Kohler illumination so that the source size and angular distribution in the back-projected pupil plane at aperture plate 252 respectively determine the angular distribution of illumination and spot size on the substrate. Thus, the illustrated arrangement allows for rapid switching between illumination or a small area from a wide range of angles, using the first source module, and illumination or a larger area from a narrow range of angles, using the second source module. By use of a sufficiently powerful source and a rapidly tiltable mirror, a large number of measurements using different angles or illumination can be tasks in a short period or time. Alternatively, by integrating measurements tasks while tilting the mirror by small amounts about one or two axes, or by using an integrating sensor, a measurement based on a larger illuminated area and a wide range of illumination angles can be obtained. With an embodiment of the invention, a small measurement spot may be provided for underfill relatively large targets, eg in the scribe line, for accurate measurements while a larger spot with a well defined illumination angle may be provided for measurements of relatively small targets, eg in-those markers.
    [0054] The two sources may both be kept on during use of the apparatus to allow rapid selection between them or selectively energized as required.
    In an embodiment of the invention, the measurement branch of the metrology device can be supplemented by an additional, high-speed sensor, as shown in Figure 7. The additional measurement branch 40 includes: a partly-silvered mirror or beam splitter 41 to directly some light reflected from the target and collected by objective 15 into the measurement branch; imaging optics 42 to project an image of the pupil plane of the objective 15 onto an adjustable aperture stop 44; and a further lens or lens system 45 to form an image of the target on second sensor 46, which may be a CMOS camera. In some particular occasions a high-speed camera is desirable. A folding mirror 43 is provided for convenience. The adjustable aperture stop 44 can allow selective blocking of the zero order, e.g. for overlay measurements, but pass it, e.g., for CD measurements.
    The above apparatus can be used to measure overlay as follows. Two images of the overlay target, e.g. a biased grating, are obtained using respective different angles or illumination. In an embodiment, the illumination or the target for the two images is inclined to the normal by the same angle but in opposite directions. Using a pattern recognition algorithm, the area of the grating can be identified in each image and an intensity value obtained from the identified area. The overlay can then be determined from the difference in intensity values. This method can be extended to measure overlay in two directions by taking two further images with the illumination angle rotated azimuthally by about 90 degrees.
    Another embodiment of the invention differs from the embodiment of the invention described above in the source modules but is otherwise the same. It is shown in Figure 8. Rather than a supercontinuous laser, the second source module 22 'includes a xenon lamp and fiber 24' is a multimode fiber similar to fiber 23. An additional condensing lens 259 is also included between the end of fiber 24 'and the aperture plate 252'. The folding mirror illustrated is merely for convenience and can be omitted if desired. Aperture plate 252 'has aperture sizes appropriate to the beams generated by the two source modules.
    Thus, in the embodiment of Figure 8, the second source module 22 is equivalent in structure and set up to the first source module 21, but differs in that the fiber 24 has a different diameter than fiber 23. For example, fiber 23 may have a diameter or about 100pm and fiber 24 'a diameter or about 400pm. Since the ends of fibers 21 and 24 'are imaged on the tiltable mirror 254, the tiltable mirror can be used to simply and quickly select between sources and hence the size of the spot illuminated on the substrate W. As in the embodiment of Figure 4 more than two sources can be used to enable a wider choice of spot sizes.
    Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin film magnetic heads, etc .. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms "wafer "or" die "Read may be considered as synonymous with the more general terms" substrate "or" target portion ", respectively. The substrate referred to may be processed, before or after exposure, in for example a track (a tool that typically applies to a layer of resist to a substrate and develops the exposed resist), a metrology tool and / or an inspection tool. Where applicable, the disclosure may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multilayer IC, so that the term substrate used may also refer to a substrate that already contains multiple processed layers.
    Although specific reference may have been made above to the use of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows , is not limited to optical lithography. In imprint lithography a topography in a patterning device the pattern created on a substrate. The topography of the patterning device may be pressed into a layer or resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
    The terms "radiation" and "beam" used include compass and all types of electromagnetic radiation, including ultraviolet (UV) radiation (eg having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (eg having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
    The term "lens", where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
    While specific expired of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (eg semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
    The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope or the clauses set out below. Other aspects of the invention are set out as in the following numbered clauses: 1. A metrology apparatus configured to measure a property or a target on a substrate, including the apparatus: a first source configured to emit a first illumination beam of radiation; a second source configured to emit a second illumination beam of radiation; a beam selection device configured to select one of the first and second illumination beams of radiation as a measurement beam of radiation; an objective lens configured to direct the measurement beam of radiation onto the target on the substrate and to collect radiation diffracted by the target; a sensor configured to detect an angle resolved spectrum in a pupil plane or the objective lens. 2. An apparatus according to clause 1, including at least one of the first and second sources comprising: a broadband radiation source arranged to emit a first beam or radiation having a first wavelength range; a wavelength selection device arranged to select from the first beam of radiation as an output beam a second beam of radiation having a second wavelength range, the second wavelength range being narrower than the first wavelength range. 3. An apparatus according to clause 2, the wavelength selection device is selected from the group consisting of an acousto-optical tunable filter, a dispersive element and an interference filter. 4. An apparatus according to clause 2, where the broadband radiation source is a supercontinuous laser. 5. An apparatus according to clause 1, where at least one of the first and second sources comprises a xenon lamp. 6. An apparatus according to clause 1, comprising the first source comprises a xenon lamp and the second source comprises: a broadband radiation source arranged to emit a first beam or radiation having a first wavelength range; a wavelength selection device arranged to select from the first beam of radiation as an output beam a second beam of radiation having a second wavelength range, the second wavelength range being narrower than the first wavelength range. 7. An apparatus according to clause 6, the wavelength selection device is selected from the group consisting of an acousto-optical tunable filter, a dispersive element and an interference filter. 8. An apparatus according to clause 6, where the broadband radiation source is a supercontinuous laser. 9. An apparatus according to clause 1, each of the first and second sources comprising a xenon lamp. 10. An apparatus according to clause 1, the objective lens has a pupil plane and the first and second sources are configured so that the first and second illumination beams have respective spatial extents and angular ranges at a plane conjugate with the pupil plane of the objective lens, at least one of the spatial extent and angular range of the first illumination beam being different from the spatial extent and angular range of the second illumination beam so that a spot formed by the measurement beam of radiation on the substrate differs in size, or illumination angle, or both size and illumination angle according to whether the beam selection device selects the first or second illumination beam as the measurement beam of radiation. 11. An apparatus according to clause 1, where the beam selection device comprises a tiltable mirror. 12. An apparatus according to clause 11, where the tiltable mirror is tiltable about two axes. 13. An apparatus according to clause 11, the beam selection device comprises an optical system configured to directly the first and second illumination beams onto a pivot point of the tiltable mirror. 14. An apparatus according to clause 11, the tiltable mirror is configured so that changes in its orientation change the angle of incidence or the measurement beam or radiation on the substrate. 15. An apparatus according to clause 11, the beam selection device further comprises a selectable aperture stop. 16. An apparatus according to clause 1, further comprising an additional sensor, a beam splitter configured to directly a part of the radiation collected by the objective lens to the additional sensor and an imaging optical system configured to form an image of the target on the additional sensor. 17. A lithographic apparatus including: an illumination optical system arranged to illuminate a pattern; a projection optical system arranged to project an image of the pattern onto a substrate; and a metrology device configured to measure a property of a target on the substrate, including the device: a first source configured to emit a first illumination beam of radiation; a second source configured to emit a second illumination beam of radiation; a beam selection device configured to select one of the first and second illumination beams of radiation as a measurement beam of radiation; an objective lens configured to direct the measurement beam of radiation onto the target on the substrate and to collect radiation diffracted by the target; a sensor configured to detect an angle resolved spectrum in a pupil plane or the objective lens. 18. An apparatus according to clause 17, including an exposure station and a measurement station, the substrate table being moveable between the exposure station and the measurement station, and the metrology device being positioned at the measurement station. 19. A method of measuring a property of a target on a substrate, including the method: generating at least one of a first or a second illumination beam, the first and second illumination beams, differing in at least one of a spatial extent and range of angles ; selecting one of the first and second illumination beams as a measurement beam and directing the measurement beam onto the target; collecting radiation diffracted from the target using an objective lens; detecting an angle-resolved spectrum in a pupil plane or the objective lens. 20. A method according to clause 19, selecting one of the first or the second illumination beam is based on a size, or type, or both the size and type of the target.
    权利要求:
    Claims (1)
    [1]
    A lithography device comprising: an illumination device adapted to provide a radiation beam; a carrier constructed to support a patterning device, the patterning device being capable of applying a pattern in a section of the radiation beam to form a patterned radiation beam; a substrate table constructed to support a substrate; and a projection device adapted to project the patterned radiation beam onto a target area of the substrate, characterized in that the substrate table is adapted to position the target area of the substrate in a focal plane of the projection device.
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US5049740A|1984-12-26|1991-09-17|Hughes Aircraft Company|Multiple field of view sensor|
    US6393037B1|1999-02-03|2002-05-21|Lambda Physik Ag|Wavelength selector for laser with adjustable angular dispersion|
    US6750968B2|2000-10-03|2004-06-15|Accent Optical Technologies, Inc.|Differential numerical aperture methods and device|
    US7046376B2|2002-07-05|2006-05-16|Therma-Wave, Inc.|Overlay targets with isolated, critical-dimension features and apparatus to measure overlay|
    SG125926A1|2002-11-01|2006-10-30|Asml Netherlands Bv|Inspection method and device manufacturing method|
    US7317531B2|2002-12-05|2008-01-08|Kla-Tencor Technologies Corporation|Apparatus and methods for detecting overlay errors using scatterometry|
    US7061623B2|2003-08-25|2006-06-13|Spectel Research Corporation|Interferometric back focal plane scatterometry with Koehler illumination|
    CN100517569C|2004-08-09|2009-07-22|株式会社尼康|Optical characteristic measuring device and measuring method, exposure device and method, and device manufacturing method|
    US7588868B2|2004-10-06|2009-09-15|Cadence Design Systems, Inc.|Method and system for reducing the impact of across-wafer variations on critical dimension measurements|
    US7453577B2|2004-12-14|2008-11-18|Asml Netherlands B.V.|Apparatus and method for inspecting a patterned part of a sample|
    US7502101B2|2005-02-25|2009-03-10|Nanometrics Incorporated|Apparatus and method for enhanced critical dimension scatterometry|
    US20070002336A1|2005-06-30|2007-01-04|Asml Netherlands B.V.|Metrology apparatus, lithographic apparatus, process apparatus, metrology method and device manufacturing method|
    US7576900B2|2005-12-30|2009-08-18|Industrial Technology Research Institute|System and method for holographic storage|
    US7589832B2|2006-08-10|2009-09-15|Asml Netherlands B.V.|Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device method|
    US7969577B2|2006-09-14|2011-06-28|Asml Netherlands B.V.|Inspection apparatus, an apparatus for projecting an image and a method of measuring a property of a substrate|
    US20080144036A1|2006-12-19|2008-06-19|Asml Netherlands B.V.|Method of measurement, an inspection apparatus and a lithographic apparatus|
    US7852459B2|2007-02-02|2010-12-14|Asml Netherlands B.V.|Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method|
    US7701577B2|2007-02-21|2010-04-20|Asml Netherlands B.V.|Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method|
    US7570358B2|2007-03-30|2009-08-04|Asml Netherlands Bv|Angularly resolved scatterometer, inspection method, lithographic apparatus, lithographic processing cell device manufacturing method and alignment sensor|
    US8189195B2|2007-05-09|2012-05-29|Asml Netherlands B.V.|Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method|
    US7808638B2|2007-07-13|2010-10-05|Kla-Tencor Corporation|Scatterometry target and method|
    EP2048543B1|2007-10-09|2013-12-04|ASML Netherlands B.V.|An optical focus sensor, an inspection apparatus and a lithographic apparatus|
    US8190025B2|2008-02-28|2012-05-29|Olympus Corporation|Wavelength selective switch having distinct planes of operation|
    NL1036597A1|2008-02-29|2009-09-01|Asml Netherlands Bv|Metrology method and apparatus, lithographic apparatus, and device manufacturing method.|
    US8218146B2|2009-02-13|2012-07-10|Northrop Grumman Systems Corporation|System and method for detecting a target substance|NL1036597A1|2008-02-29|2009-09-01|Asml Netherlands Bv|Metrology method and apparatus, lithographic apparatus, and device manufacturing method.|
    US8218146B2|2009-02-13|2012-07-10|Northrop Grumman Systems Corporation|System and method for detecting a target substance|
    NL2005192A|2009-08-24|2011-02-28|Asml Netherlands Bv|Metrology method and apparatus, lithographic apparatus, device manufacturing method and substrate.|
    NL2005523A|2009-10-28|2011-05-02|Asml Netherlands Bv|Selection of optimum patterns in a design layout based on diffraction signature analysis.|
    NL2007176A|2010-08-18|2012-02-21|Asml Netherlands Bv|Substrate for use in metrology, metrology method and device manufacturing method.|
    NL2007765A|2010-11-12|2012-05-15|Asml Netherlands Bv|Metrology method and inspection apparatus, lithographic system and device manufacturing method.|
    WO2012062501A1|2010-11-12|2012-05-18|Asml Netherlands B.V.|Metrology method and apparatus, and device manufacturing method|
    WO2012126684A1|2011-03-24|2012-09-27|Asml Netherlands B.V.|Substrate and patterning device for use in metrology, metrology method and device manufacturing method|
    KR20140056336A|2011-08-23|2014-05-09|에이에스엠엘 네델란즈 비.브이.|Metrology method and apparatus, and device manufacturing method|
    NL2009273A|2011-08-31|2013-03-04|Asml Netherlands Bv|Level sensor arrangement for lithographic apparatus, lithographic apparatus and device manufacturing method.|
    NL2009508A|2011-10-24|2013-04-25|Asml Netherlands Bv|Metrology method and apparatus, and device manufacturing method.|
    KR101761735B1|2012-03-27|2017-07-26|에이에스엠엘 네델란즈 비.브이.|Metrology method and apparatus, lithographic system and device manufacturing method|
    NL2010458A|2012-04-16|2013-10-17|Asml Netherlands Bv|Lithographic apparatus, substrate and device manufacturing method background.|
    NL2010717A|2012-05-21|2013-11-25|Asml Netherlands Bv|Determining a structural parameter and correcting an asymmetry property.|
    WO2013178422A1|2012-05-29|2013-12-05|Asml Netherlands B.V.|Metrology method and apparatus, substrate, lithographic system and device manufacturing method|
    CN104380203B|2012-06-12|2017-09-08|Asml荷兰有限公司|Photon source, inspection equipment, etching system and device making method|
    WO2013189724A2|2012-06-22|2013-12-27|Asml Netherlands B.V.|Method of determining focus, inspection apparatus, patterning device, substrate and device manufacturing method|
    US9714827B2|2012-07-05|2017-07-25|Asml Netherlands B.V.|Metrology method and apparatus, lithographic system, device manufacturing method and substrate|
    NL2011816A|2012-11-30|2014-06-04|Asml Netherlands Bv|Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.|
    US10180628B2|2013-06-12|2019-01-15|Asml Netherlands B.V.|Method of determining critical-dimension-related properties, inspection apparatus and device manufacturing method|
    NL2013210A|2013-08-07|2015-02-10|Asml Netherlands Bv|Metrology method and apparatus, lithographic system and device manufacturing method.|
    WO2015055387A1|2013-10-17|2015-04-23|Asml Netherlands B.V.|Photon source, metrology apparatus, lithographic system and device manufacturing method|
    NL2013625A|2013-10-30|2015-05-04|Asml Netherlands Bv|Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method.|
    NL2013737A|2013-11-26|2015-05-27|Asml Netherlands Bv|Metrology method and apparatus, substrates for use in such methods, lithographic system and device manufacturing method.|
    KR101888028B1|2013-12-13|2018-08-13|에이에스엠엘 네델란즈 비.브이.|Inspection apparatus and methods, lithographic system and device manufacturing method|
    KR101953712B1|2013-12-13|2019-05-17|에이에스엠엘 네델란즈 비.브이.|Radiation source, metrology apparatus, lithographic system and device manufacturing method|
    US9913357B2|2013-12-13|2018-03-06|Asml Netherlands B.V.|Radiation source, metrology apparatus, lithographic system and device manufacturing method|
    WO2015090838A1|2013-12-19|2015-06-25|Asml Netherlands B.V.|Inspection methods, substrates having metrology targets, lithographic system and device manufacturing method|
    US10162271B2|2014-02-03|2018-12-25|Asml Netherlands B.V.|Metrology method and apparatus, substrate, lithographic system and device manufacturing method|
    US10156797B2|2014-02-17|2018-12-18|Asml Netherlands, B.V.|Method of determining edge placement error, inspection apparatus, patterning device, substrate and device manufacturing method|
    CN106030414B|2014-02-21|2018-10-09|Asml荷兰有限公司|The optimization of target arrangement and relevant target|
    CN106462078B|2014-05-13|2018-10-02|Asml荷兰有限公司|Substrate and measurement patterning device, method for measurement and device making method|
    EP3149544B1|2014-06-02|2018-10-10|ASML Netherlands B.V.|Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method|
    KR20170015984A|2014-06-30|2017-02-10|에이에스엠엘 네델란즈 비.브이.|Method of determining dose, inspection apparatus, patterning device, substrate and device manufacturing method|
    NL2014994A|2014-07-09|2016-04-12|Asml Netherlands Bv|Inspection apparatus and methods, methods of manufacturing devices.|
    WO2016015987A1|2014-07-28|2016-02-04|Asml Netherlands B.V.|Illumination system, inspection apparatus including such an illumination system, inspection method and manufacturing method|
    CN107924132B|2014-08-28|2021-02-12|Asml荷兰有限公司|Inspection apparatus, inspection method, and manufacturing method|
    US10948421B2|2014-08-28|2021-03-16|Asml Netherlands B.V.|Laser-driven photon source and inspection apparatus including such a laser-driven photon source|
    KR101986258B1|2014-08-29|2019-06-07|에이에스엠엘 네델란즈 비.브이.|Metrology method, target and substrate|
    WO2016030227A1|2014-08-29|2016-03-03|Asml Netherlands B.V.|Method for controlling a distance between two objects, inspection apparatus and method|
    WO2016034428A2|2014-09-01|2016-03-10|Asml Netherlands B.V.|Method of measuring a property of a target structure, inspection apparatus, lithographic system and device manufacturing method|
    WO2016045945A1|2014-09-26|2016-03-31|Asml Netherlands B.V.|Inspection apparatus and device manufacturing method|
    WO2016050453A1|2014-10-03|2016-04-07|Asml Netherlands B.V.|Focus monitoring arrangement and inspection apparatus including such an arragnement|
    WO2016078862A1|2014-11-21|2016-05-26|Asml Netherlands B.V.|Metrology method and apparatus|
    CN107111250B|2014-11-26|2019-10-11|Asml荷兰有限公司|Measure, computer product and system|
    WO2016096524A1|2014-12-19|2016-06-23|Asml Netherlands B.V.|Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method|
    WO2016124345A1|2015-02-04|2016-08-11|Asml Netherlands B.V.|Metrology method, metrology apparatus and device manufacturing method|
    KR102025214B1|2015-02-04|2019-09-25|에이에스엠엘 네델란즈 비.브이.|Instrumentation methods and devices, computer programs and lithography systems|
    WO2016124399A1|2015-02-06|2016-08-11|Asml Netherlands B.V.|A method and apparatus for improving measurement accuracy|
    CN107430352B|2015-03-25|2020-01-21|Asml荷兰有限公司|Measuring method, measuring apparatus and device manufacturing method|
    WO2016156360A1|2015-04-03|2016-10-06|Asml Netherlands B.V.|Inspection apparatus for measuring properties of a target structure|
    KR102048794B1|2015-04-21|2020-01-08|에이에스엠엘 네델란즈 비.브이.|Instrumentation methods and devices, computer programs and lithography systems|
    KR102066588B1|2015-06-12|2020-01-15|에이에스엠엘 네델란즈 비.브이.|Inspection apparatus, inspection method, lithographic apparatus, patterning device and manufacturing method|
    KR102162234B1|2015-06-17|2020-10-07|에이에스엠엘 네델란즈 비.브이.|Recipe selection based on consistency between recipes|
    NL2016925A|2015-06-18|2016-12-22|Asml Netherlands Bv|Method of metrology, inspection apparatus, lithographic system and device manufacturing method|
    WO2017016839A1|2015-07-24|2017-02-02|Asml Netherlands B.V.|Inspection apparatus, inspection method, lithographic apparatus and manufacturing method|
    NL2017271A|2015-08-20|2017-02-22|Asml Netherlands Bv|Metrology method and apparatus, substrates for use in such methods, lithographic system and device manufacturing method|
    NL2017300A|2015-08-27|2017-03-01|Asml Netherlands Bv|Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method|
    NL2017466A|2015-09-30|2017-04-05|Asml Netherlands Bv|Metrology method, target and substrate|
    KR102104843B1|2015-10-02|2020-04-28|에이에스엠엘 네델란즈 비.브이.|Measurement methods and devices, computer programs and lithography systems|
    WO2017089105A1|2015-11-27|2017-06-01|Asml Netherlands B.V.|Metrology target, method and apparatus, computer program and lithographic system|
    CN108369384A|2015-12-09|2018-08-03|Asml控股股份有限公司|Illuminator with flexibility|
    WO2017102264A1|2015-12-17|2017-06-22|Asml Netherlands B.V.|Source separation from metrology data|
    WO2017102428A1|2015-12-18|2017-06-22|Asml Netherlands B.V.|Focus monitoring arrangement and inspection apparatus including such an arrangement|
    CN108369389B|2015-12-21|2021-06-18|Asml荷兰有限公司|Method for measuring focus performance of lithographic apparatus, patterning device and apparatus, device manufacturing method|
    NL2017844A|2015-12-22|2017-06-28|Asml Netherlands Bv|Focus control arrangement and method|
    KR102190305B1|2015-12-23|2020-12-14|에이에스엠엘 네델란즈 비.브이.|Metrology method, metrology device and device manufacturing method|
    JP6697560B2|2015-12-23|2020-05-20|エーエスエムエル ネザーランズ ビー．ブイ．|Metrology method and apparatus|
    CN108475024B|2015-12-31|2021-02-09|Asml控股股份有限公司|Method and apparatus for focusing in an inspection system|
    US10437158B2|2015-12-31|2019-10-08|Asml Netherlands B.V.|Metrology by reconstruction|
    US10018560B2|2016-02-02|2018-07-10|Kla-Tencor Corporation|System and method for hyperspectral imaging metrology|
    CN108700824B|2016-02-19|2021-02-02|Asml荷兰有限公司|Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength selective filter for use therein|
    KR102188711B1|2016-02-26|2020-12-09|에이에스엠엘 네델란즈 비.브이.|Method for measuring structure, inspection apparatus, lithographic system and device manufacturing method|
    WO2017148665A1|2016-03-01|2017-09-08|Asml Netherlands B.V.|Metrology apparatus, method of measuring a structure and lithographic apparatus|
    US10453758B2|2016-03-01|2019-10-22|Asml Netherlands B.V.|Method and apparatus to determine a patterning process parameter using an asymmetric optical characteristic distribution portion|
    US10831111B2|2016-03-03|2020-11-10|Asml Netherlands B.V.|Metrology method and lithographic method, lithographic cell and computer program|
    WO2017148759A1|2016-03-04|2017-09-08|Asml Netherlands B.V.|Method for characterizing distortions in a lithographic process, lithographic apparatus, lithographic cell and computer program|
    WO2017153130A1|2016-03-07|2017-09-14|Asml Netherlands B.V.|Illumination system and metrology system|
    US11022896B2|2016-03-11|2021-06-01|Asml Netherlands B.V.|Mark position determination method|
    WO2017178220A1|2016-04-11|2017-10-19|Asml Netherlands B.V.|Metrology target, method and apparatus, target design method, computer program and lithographic system|
    CN109073987B|2016-04-15|2021-01-12|Asml荷兰有限公司|Method for adjusting actuation of a lithographic apparatus|
    KR102238466B1|2016-04-22|2021-04-09|에이에스엠엘 네델란즈 비.브이.|Determination of stack differences and correction techniques using stack differences|
    WO2017186483A1|2016-04-29|2017-11-02|Asml Netherlands B.V.|Method and apparatus for determining the property of a structure, device manufacturing method|
    KR102205364B1|2016-05-17|2021-01-20|에이에스엠엘 네델란즈 비.브이.|Measurement robustness improvement technology based on penetration-wavelength similarity|
    WO2017202602A1|2016-05-23|2017-11-30|Asml Netherlands B.V.|Selection of substrate measurement recipes|
    CN109313393A|2016-06-09|2019-02-05|Asml荷兰有限公司|Measuring equipment|
    CN109313404B|2016-06-09|2021-02-05|Asml荷兰有限公司|Radiation source|
    US10691029B2|2016-06-15|2020-06-23|Asml Netherlands B.V.|Substrate measurement recipe configuration to improve device matching|
    NL2019081A|2016-06-30|2018-01-09|Asml Holding Nv|Method and device for pupil illumination in overlay and critical dimension sensors|
    WO2018001747A1|2016-07-01|2018-01-04|Asml Netherlands B.V.|Illumination system for a lithographic or inspection apparatus|
    KR102221760B1|2016-07-15|2021-03-04|에이에스엠엘 네델란즈 비.브이.|Apparatus and method for design of metrology target field|
    KR20190031542A|2016-07-21|2019-03-26|에이에스엠엘 네델란즈 비.브이.|METHOD OF MEASURING TARGET, SUBSTRATE, METROLOGY DEVICE, AND LITHOGRAPHIC DEVICE|
    EP3279736A1|2016-08-01|2018-02-07|ASML Netherlands B.V.|Device and method for processing a radiation beam with coherence|
    WO2018028971A1|2016-08-11|2018-02-15|Asml Holding N.V.|Variable corrector of a wave front|
    US10578982B2|2016-08-17|2020-03-03|Asml Netherlands B.V.|Substrate measurement recipe design of, or for, a target including a latent image|
    WO2018036828A1|2016-08-23|2018-03-01|Asml Netherlands B.V.|Metrology apparatus for measuring a structure formed on a substrate by a lithographic process, lithographic system, and method of measuring a structure formed on a substrate by a lithographic process|
    KR102293144B1|2016-09-01|2021-08-26|에이에스엠엘 네델란즈 비.브이.|Automatic selection of measurement target measurement recipes|
    EP3290911A1|2016-09-02|2018-03-07|ASML Netherlands B.V.|Method and system to monitor a process apparatus|
    EP3291008A1|2016-09-06|2018-03-07|ASML Netherlands B.V.|Method and apparatus to monitor a process apparatus|
    KR102200257B1|2016-09-06|2021-01-11|에이에스엠엘 홀딩 엔.브이.|Device and method for focusing in inspection system|
    EP3293574A1|2016-09-09|2018-03-14|ASML Netherlands B.V.|Metrology method, apparatus and computer program|
    EP3293575A1|2016-09-12|2018-03-14|ASML Netherlands B.V.|Differential target design and method for process metrology|
    JP6855565B2|2016-09-27|2021-04-07|エーエスエムエル ネザーランズ ビー．ブイ．|Metrology recipe selection|
    EP3299890A1|2016-09-27|2018-03-28|ASML Netherlands B.V.|Metrology recipe selection|
    EP3309616A1|2016-10-14|2018-04-18|ASML Netherlands B.V.|Method of inspecting a substrate, metrology apparatus, and lithographic system|
    EP3321738A1|2016-11-10|2018-05-16|ASML Netherlands B.V.|Method of measuring a parameter of a device manufacturing process, metrology apparatus, substrate, target, device manufacturing system, and device manufacturing method|
    CN110140087B|2016-11-10|2021-08-13|Asml荷兰有限公司|Design and correction using stack differences|
    EP3321736A1|2016-11-10|2018-05-16|ASML Netherlands B.V.|Measurement system, lithographic system, and method of measuring a target|
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    WO2022008135A1|2020-07-09|2022-01-13|Asml Netherlands B.V.|Metrology method and apparatus and computer program|
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    EP3945367A1|2020-07-31|2022-02-02|ASML Netherlands B.V.|Method for controlling a manufacturing process and associated apparatuses|
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