• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The rare earth metal-containing bismuth titanate ferroelectric material of the present invention, Bi 4-x R x Ti 3 O 12 (wherein R is Nd, Gd, Pr, Sm or a mixture thereof, x is a number from 0.25 to 1.25) is 700 ℃ It has a low phase formation temperature below and a high residual polarization value (2P r ) of 15 μC / cm 2 or more, and the nonvolatile polarization reduction amount after repeated long-term polarization reversal is 20% or less, which is excellent in fatigue resistance. .
    公开号:KR20020078532A
    申请号:KR1020010017819
    申请日:2001-04-04
    公开日:2002-10-19
    发明作者:전웅；장현명；박병학
    申请人:학교법인 포항공과대학교；
    IPC主号:
    专利说明:

    FERROELECTRIC BISMUTH TITANATE HAVING RARE EARTH ELEMENTS
    [6] The present invention relates to ferroelectric materials, and more particularly to bismuth (Bi), rare earth metals such as Nd, Gd, Pr, Sm or mixtures thereof, and titanium (Ti), wherein the rare earth metal (R ) Is related to a ferroelectric material of the general formula Bi 4-x R x Ti 3 O 12 , having a content (x) in the range of 0.25 to 1.25.
    [7] Since the research of applying ferroelectric materials to memory chips in the late 1980s, commercialization of his products has become more visible in many countries. Basic requirements for such ferroelectric random access memory (FRAM) devices include high phase transition temperature (T C ), high residual polarization (P r ), low phase generation temperature, and low electric field ( coercive field) (E c ). As a ferroelectric material that satisfies these conditions, Korean Patent Application No. 96-17011 (Korean Patent Publication No. 99-233999) discloses a lead zirconate titanate (PZT) (Pb (Zr x Ti 1-x ) O 3 ) thin film. James F. Scott et al. Have reported on strontium bismuth titanate (SrBi 2 Ti 2 O 9 ) ("Ferroelectric Memories", Science vol. 246 , 1400 (1989)).
    [8] In a ferroelectric memory (FRAM) device, information is input or stored by using a difference in the amount of charge during positive polarization and negative polarization. At this time, when the difference in the amount of charge in the positive polarization and the negative polarization is large, the possibility of error in detecting the signal is low, and the design and manufacture of the device are easy. In order to increase the difference in charge amount between positive and negative polarization, a material having a high residual polarization amount should be used.
    [9] In addition, fatigue should not appear in the ferroelectric material during repeated polarization inversion while inputting and storing information in the FRAM device. When such a fatigue phenomenon occurs, the amount of residual polarization (P r value) is significantly reduced, thereby making it difficult to detect an electrical signal when reading and storing information and increasing the possibility of error.
    [10] In the case of PZT, although it is useful as a material for ferroelectric memory elements due to the high amount of residual polarization, fatigue phenomenon occurs and deterioration of residual polarization occurs when polarization inversion is performed about 10 7 times. To improve this, Takashi Nakamura et al. Developed an electrode material containing IrO 2 , RuO 2 , composite oxides, etc. ("Preparation of Pb (Zr, Ti) O 3 thin films on electrodes including IrO 2 ", Applied Physics Letter vol. 65 , No. 12 , 1522-1524 (1994)). However, these electrode materials are not only expensive but also difficult to manufacture, resulting in low economic efficiency.
    [11] In addition, in the case of the SBT, the fatigue resistance is excellent, but the difference in the amount of charges between the positive and negative polarizations is as small as 10 μc / cm 2 , which makes the signal difficult to detect and has a high possibility of error. In addition, since the ferroelectric phase generating temperature is a high temperature of 750 ℃ or more, the heat treatment temperature is increased during fabrication of the memory device, causing a failure rate to be increased.
    [12] In order to solve these problems, bakbaeho etc. La-containing titanate, bismuth has a lower phase formation temperature while having a high P r value SBT contrast, as well as not exhibit fatigue even after 3x10 10 meeting polarization reversal SBT contrast (BLT, Bi 3.25 La 0.75 Ti 3 O 12 ) has been developed and reported ("Lanthanum-substituted bismuth titanate for use in non-volatile memories", Nature , vol. 401 , 14 (1999)). However, the BLT has room for improvement because the residual polarization value is relatively lower than that of PZT.
    [13] Accordingly, an object of the present invention is Bi 4-x R x Ti 3 O 12 (a ferroelectric material having a low phase formation temperature and a high residual polarization value compared to SBT, and having a durability against fatigue caused by repeated polarization reversal) With the proviso that R is Nd, Gd, Pr, Sm or a mixture thereof.
    [1] 1 is a schematic diagram showing the crystal structure of Bi 4-x R x Ti 3 O 12 which is a rare earth metal-containing bismuth titanic ferroelectric material according to the present invention;
    [2] 2 and 3 are X-ray diffraction (XRD) of the ferroelectric material Bi 4-x R x Ti 3 O 12 (x = 0.25 to 1.25) thin film prepared in Examples 1-7 and 8-10 of the present invention Represents a pattern;
    [3] 4 shows the X-ray diffraction patterns of the ferroelectric materials Bi 4-x Nd × Ti 3 O 12 (x = 0 and 1.45) thin films prepared in Comparative Examples 1 and 2;
    [4] 5-11 and 12-14 illustrate PE (polarization-field) according to the applied voltage change of the Bi 4-x R x Ti 3 O 12 ferroelectric thin films prepared in Examples 1-7 and 8-10 of the present invention. : polarization-electric field represents a change in the hysteresis curve and the amount of nonvolatile polarization reduction due to polarization reversal;
    [5] 15 and 16 show changes in PE hysteresis curve and polarization reversal according to applied voltage changes of Bi 4 Ti 3 O 12 and PbZr 0.4 Ti 0.5 O 3 (PZT) ferroelectric thin films prepared in Comparative Examples 1 and 3, respectively. Nonvolatile polarization reduction amounts are shown respectively.
    [14] In the present invention, rare earth metal-containing bismuth titanate (Bi 4-x R x Ti 3 O 12 ), having a low phase generation temperature of 700 ° C. or lower, and a high residual polarization amount compared to BLT, and without fatigue phenomenon due to repeated polarization inversion. (BRT) provides ferroelectric materials. The rare earth metal (R) is Nd, Gd, Pr, Sm or a mixture thereof, and x has a range of 0.25 to 1.25.
    [15] Hereinafter, the present invention will be described in more detail.
    [16] Bismuth titanate is known as a ferroelectric, and has a low melting point and a high volatility. The source of this ferroelectric phenomenon is the perovskite unit lattice in the bismuth titanate crystal lattice, which is adjacent to bismuth and has relatively low stability. Therefore, if the polarization reversal is caused by repeatedly applying the electric field to the bismuth titanic ferroelectric material, the oxygen atoms constituting the perovskite are highly likely to be lost, which causes the fatigue reversal of the polarization reversal, resulting in a reduction of the residual polarization and thus the material. The reliability of is lowered.
    [17] The present inventors examined elements that can replace bismuth in the bismuth titanate crystal lattice while maintaining the perovskite unit grid in order to increase the stability of the perovskite. As a result, rare earth metals such as Nd, Gd, Pr, which have a valence of +3 equal to bismuth and an ion radius similar to bismuth, can easily replace bismuth in the crystal lattice, as well as cause high phase transition temperatures. And Sm was derived. Bi 4-x R x Ti 3 O 12 , the rare earth metal-containing bismuth titanate ferroelectric material, has a crystal structure as shown in FIG. 1.
    [18] The rare earth metal-containing bismuth titanate ferroelectric material of the present invention may be manufactured in various forms such as thin films and bulks such as ceramics, and requires high residual polarization values and durability against fatigue phenomena occurring upon repeated polarization reversal. Applications of various ferroelectric materials, for example ferroelectric memory, sensors, electro-optical field and the like can be effectively used.
    [19] The ferroelectric material Bi 4-x R x Ti 3 O 12 (BRT) (x = 0.25 to 1.25) according to the present invention may be formed in a thin film form by conventional methods, for example, sol coating, sputtering, laser ablation, or the like. Can be prepared.
    [20] Specific examples of the sol coating method as one method for producing a thin film of the ferroelectric material are as follows: Bismuth by dissolving each organic or inorganic salt containing the rare earth metal (R), bismuth and titanium in a solvent: It is prepared by forming a sol mixed with a rare earth metal: titanium in a molar ratio in the range of 4-x: x: 3, coating it on a substrate, and drying and heat-treating it.
    [21] In addition, the ferroelectric material Bi 4-x R x Ti 3 O 12 (BRT) (x = 0.25 to 1.25) according to the present invention may be prepared in a ceramic form by a conventional method.
    [22] As one method for preparing a ceramic of the ferroelectric material, specific examples are as follows: Bismuth: Rare Earth Metals: Titanium is mixed and dried with each organic or inorganic salt comprising a molar ratio in the range of 4-x: x: 3 And sintered.
    [23] The invention can be better understood by the following examples, which are intended for the purpose of illustration of the invention and are not intended to limit the scope of protection defined by the appended claims.
    [24] Example
    [25] Formation of Ferroelectric Thin Films
    [26] General formula Bi 4-x R x Ti 3 in sol form obtained by dissolving bismuth, rare earth metal, and titanium isopropoxide in acetic acid solvent so that the kind and content of rare earth metals are as shown in Table 1. A bismuth titanate composition of O 12 was coated onto a Pt coated substrate (Pt / TiO 2 / SiO 2 / Si substrate). The coated thin film was dried at room temperature, and then heat-treated at 700 ° C. for 60 minutes in an oxygen atmosphere to prepare the rare earth metal-containing bismuth titanate thin films, respectively. A Pt electrode was deposited on the ferroelectric thin film to obtain a capacitor.
    [27]
    [28] X-ray diffraction (XRD) patterns of the Bi 4-x R x Ti 3 O 12 ferroelectric thin films prepared in Examples 1-7 and 8-10 are shown in FIGS. 2 and 3, respectively, and Comparative Example 1 X-ray diffraction patterns of the Bi 4-x Nd x Ti 3 O 12 (x = 0 and 1.45) thin films prepared in FIG. 2 are shown in FIG. 4.
    [29] Figure 2 is a graph showing the crystallization behavior of the B 4-x Nd x Ti 3 O 12 ferroelectric thin film after annealing for 1 hour at 650 ℃, the xRD diffraction pattern was observed in the composition of x 0.25 to 1.25. This means that the crystal growth of the thin film proceeded at a temperature of 650 ℃. 3 is a graph showing the crystal formation behavior of B 4-x R x Ti 3 O 12 (R = Pr, Gd and Sm, x = 0.85) ferroelectric thin film after heat treatment at 700 ° C. for 1 hour. From the observation of XRD diffraction patterns in all the compositions, it can be seen that crystal growth proceeded at a temperature of 700 ° C. On the other hand, from Fig. 4, x = 0 thin film, that is, Bi 4 Ti 3 O 12 when the heat treatment at 650 ℃ for 1 hour as the XRD diffraction pattern observed crystal growth proceeded, but x = 1.45 thin film, That is, Bi 2.55 Nd 1.45 Ti 3 O 12 can be seen that the crystal growth did not proceed because the XRD diffraction pattern is not observed.
    [30] Durability test on dielectric properties and fatigue phenomena of thin films
    [31] The residual polarization value (2P r ) of the ferroelectric thin film obtained above and the occurrence of fatigue phenomena caused by 3x10 10 polarization reversal were measured by the electric field-residual polarization measurement method, and the result was compared with that of the conventional PZT thin film. Compared with Example 3) is shown in Table 2 and Figures 5 to 16, respectively.
    [32]
    [33] PE (polarization-field) according to the applied voltage change of Bi 4-x Nd x Ti 3 O 12 prepared in Examples 1 to 7 and Bi 3.15 R 0.85 Ti 3 O 12 ferroelectric thin films prepared in Examples 8 to 10 The nonvolatile polarization reduction amount according to the hysteresis curve change and the polarization reversal are illustrated in FIGS. 5-11 and 12-14, respectively.
    [34] As shown in FIGS. 5-14 and Table 2, in the bismuth titanate ferroelectric material, when the content of rare earth metals Nd, Gd, Pr, and Sm is 0.25 to 1.25 mol, the residual polarization value (2P r ) of the ferroelectric thin film is All were 17-100 μC / cm 2 , and no fatigue phenomenon occurred. It has a significantly improved residual polarization value compared to the residual polarization value (2P r ) of SBT and BLT, which is generally known as a material without fatigue phenomenon, is 16 μC / cm 2 or less and 24 μC / cm 2 or less, respectively. This is a big step forward in terms of its use as a ferroelectric memory material that requires durability against fatigue phenomenon caused by repetitive polarization reversal.
    [35] Meanwhile, as shown in Table 2 and FIG. 15, in the case of the ferroelectric thin film containing no rare earth metal of Comparative Example 1 (x = 0), that is, Bi 4 Ti 3 O 12 , residual polarization due to polarization inversion The rapid decrease of was not observed, but the residual polarization value was about 3 μC / cm 2 , which makes it less usable. As in Comparative Example 2, in the case of x = 1.45, that is, a Bi 2.55 Nd 1.45 Ti 3 O 12 ferroelectric thin film, the development of the ferroelectric phase was insufficient at 700 ° C., and thus the residual polarization due to the application of the electric field could not be measured. On the other hand, PZT of Comparative Example 3 is a typical ferroelectric material of high commercial value due to the high residual polarization amount as described above, but as shown in Table 2 and FIG. 16, the nonvolatile polarization reduction amount (P) after 3 × 10 10 polarization inversions (P nv = P sw -P ns ) was 60%, and the occurrence of fatigue phenomenon was observed as the residual polarization amount decreased with increasing number of polarization inversions.
    [36] From the above results, in the rare earth metal-containing bismuth titanate ferroelectric material according to the present invention, when the rare earth metal content (x value) is less than 0.25 mole, the residual polarization amount becomes smaller, resulting in a lower commercial value. It can be seen that the formation of ferroelectric crystal phase is suppressed due to the increase in temperature, and thus does not exhibit ferroelectric properties. Therefore, the rare earth metal-containing bismuth titanate thin film (Bi 4-x R x Ti 3 O 12 ) has a high residual polarization value and fatigue phenomenon. In order to have durability, it is understood that the rare earth metal content is preferably in the range of 0.25 to 1.25.
    [37] Rare earth metal-containing ferroelectric materials Bi 4-x R x Ti 3 O 12 produced by the present invention, provided that R is Nd, Gd, Pr, Sm or mixtures thereof, x being 0.25 to 1.25 It can be effectively used in the application of various ferroelectric materials, for example, ferroelectric memory, sensor, electro-optical field, etc., which require durability against fatigue and repetitive polarization.
    [38] The material represented by the general formula Bi 4-x R x Ti 3 O 12 of the present invention (wherein R is Nd, Gd, Pr, Sm or a mixture thereof, x is 0.25 to 1.25) is a low It has a phase formation temperature and high residual polarization value (2P r ) of more than 15 μC / cm 2 , and the fatigue phenomenon does not occur because the decrease of non-volatile polarization (P nv = P sw -P ns ) after long-term polarization reversal is 20% or less. Do not.
    [39] Simple modifications or changes of the present invention can be easily carried out by those skilled in the art, and all such modifications or changes can be seen to be included in the scope of the present invention.
    权利要求:
    Claims (4)
    [1" claim-type="Currently amended] Ferroelectric material having a composition of the general formula Bi 4-x R x Ti 3 O 12 , wherein R is a rare earth metal selected from the group consisting of Nd, Gd, Pr, Sm and mixtures thereof, x being a number ranging from 0.25 to 1.25 ).
    [2" claim-type="Currently amended] The method of claim 1,
    A ferroelectric material, characterized in that it is manufactured in a thin film form by coating a substrate in which a solution of each salt containing Bi: R: Ti in a molar ratio of 4-x: x: 3 is dissolved in a solvent.
    [3" claim-type="Currently amended] The method of claim 1,
    A ferroelectric material, which is manufactured in a ceramic form by drying and sintering each salt containing Bi: R: Ti in a molar ratio of 4-x: x: 3.
    [4" claim-type="Currently amended] An article comprising the ferroelectric material of claim 1.
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    同族专利:
    公开号 | 公开日
    KR100425531B1|2004-03-30|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-04-04|Application filed by 학교법인 포항공과대학교
    2001-04-04|Priority to KR10-2001-0017819A
    2002-10-19|Publication of KR20020078532A
    2004-03-30|Application granted
    2004-03-30|Publication of KR100425531B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR10-2001-0017819A|KR100425531B1|2001-04-04|2001-04-04|Ferroelectric bismuth titanate having rare earth elements|
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