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    • 专利摘要:
    PURPOSE: To provide a chemical amplification type positive type resist composition containing a resin component and an acid generator, suitable for excimer laser lithography using ArF, KrF or the like, excellent in performance balance of resolution and sensitivity and having high dry etching resistance. CONSTITUTION: The chemical amplification type positive type resist composition contains an alkali-insoluble resin having a polymerization unit derived from a monomer of formula (I) and made alkali-soluble by the action of an acid and an acid generator.
    公开号:KR20020073389A
    申请号:KR1020020013177
    申请日:2002-03-12
    公开日:2002-09-26
    发明作者:미야요시코；우에타니야스노리；후지시마히로아키
    申请人:스미또모 가가꾸 고교 가부시끼가이샤；
    IPC主号:
    专利说明:

    Chemical amplifying type positive resist composition
    [1] The present invention relates to a chemically amplified positive resist composition used for microfabrication of semiconductors.
    [2] The plate printing process using a resist composition was conventionally employed for the microfabrication of a semiconductor. In a plate printing process, the resolution can be improved in principle when the exposure wavelength is shortened, as represented by the formula of Rayleigh's diffraction limit. As an exposure light source for the flat plate printing process used in the manufacture of semiconductors, g-rays having a wavelength of 436 nm, i-rays having a wavelength of 365 nm, and KrF excimer lasers having a wavelength of 248 nm have been employed. Therefore, the wavelength is getting shorter every year. ArF excimer lasers with a wavelength of 193 nm are considered to be promising as next generation exposure light sources.
    [3] The lens used for the ArF excimer laser exposure machine has a short lifespan as compared to a lens for a conventional exposure light source. Therefore, it is desirable that the time required for exposure to ArF excimer laser light is short. For this reason, it is necessary to enhance the sensitivity of the resist. As a result, so-called chemically amplified resists have been used which utilize the catalysis of the acid generated by exposure and contain a resin having a group that is cleaved by the acid.
    [4] It is known that the resin used for the ArF excimer laser exposure resist does not have an aromatic ring in order to secure the transmittance of the resist, but it is known to have an alicyclic ring in place of the aromatic ring in order to impart dry etching resistance thereto. See Journal of Photopolymer Science and Technology, Vol. 9, No. 3, pages 387-398 (1996) by D. C. Hofer, various types of resins are known so far as such resins.
    [5] A resin used in a resist for ArF excimer laser exposure, comprising: a cross-copolymer comprising a polymer unit of an alicyclic olefin and a polymer unit of an unsaturated dicarboxylic anhydride [see T.I. Wallow et al., Proc, SPIE, vol. 2724, pp. 355-364 (1996)], polymers having alicyclic lactone structural units (Japanese Patent Laid-Open No. 2000-26446), and the like are known. However, none of these resins have been found to provide as dry etching resistance as high as aromatic rings.
    [6] SUMMARY OF THE INVENTION An object of the present invention is to provide a chemically amplified positive resist composition comprising a resin and an acid generator, which is suitable for a plate printing process using excimer laser light such as ArF and KrF. Excellent balance, high dry etching resistance.
    [7] The present inventors use a resin having a polymerized unit derived from a monomer having a specific structure as a part of the polymerized unit of the resin constituting the chemically amplified positive resist composition to balance performance such as resolution, profile, sensitivity, and adhesion. It has been found that a resist composition which is excellent in this and high in dry etching resistance can be obtained. The present invention has been completed based on this finding.
    [8] The present invention provides a chemically amplified positive resist composition comprising a resin and an acid generator which have polymerized units derived from the monomer of formula 1 and are insoluble in the alkali itself but are alkali-soluble due to the action of acid.
    [9]
    [10] In Formula 1 above,
    [11] R 1 and R 2 are independently hydrogen or an alkyl group having 1 to 4 carbon atoms,
    [12] R 3 is hydrogen or a methyl group.
    [13] The resist composition of the present invention includes a resin having a polymerized unit derived from the monomer of formula 1 above as the resin component. Specific examples of the monomer of the formula (1) include the following compounds, preferably the ones on the left.
    [14]
    [15] The resin as a component of the positive resist composition of the present invention is insoluble in alkali but becomes soluble due to the action of acid. The resin preferably contains polymerized units having groups which are deblocked due to the action of acids.
    [16] Specific examples of groups that are deblocked due to the action of acids are alkyl esters, acetal esters, such as methoxymethyl esters, ethoxymethyl esters, 1-ethoxyethyl, having from about 1 to 6 carbon atoms characterized by tertiary butyl esters. Esters, 1-isobutoxyethyl ester, 1-isopropoxyethyl ester, 1-ethoxypropyl ester, 1- (2-methoxyethoxy) ethyl ester, 1- (2-acetoxyethoxy) ethyl ester, 1- [2- (1-adamantyloxy) ethoxy] ethyl ester, 1- [2- (1-adamantanecarbonyloxy) ethoxy] ethyl ester, tetrahydro-2-furyl ester and tetrahydro Carboxylic esters, including 2-pyranyl esters) and cycloaliphatic esters such as 2-alkyl-2-adamantyl, 1- (1-adamantyl) -1-alkylalkyl, and isobornyl ester) Includes various types of.
    [17] Monomers which lead to polymerized units with carboxylic acid esters as described above are acrylic monomers such as methacrylic esters and cycloaliphatic monomers to which acrylic acid esters or carboxylic acid ester groups are linked, for example norbornene carboxylic acid esters, tricyclo Decene carboxylic acid ester and tetracyclodecene carboxylic acid ester. Otherwise, it is described in Iwasa et al., Journal of Photopolymer Science and Technology, Vol. 9, No. 3, pp. 447-456 (1996), it may be an ester formed by an alicyclic group of an alicyclic carboxylic acid ester with acrylic acid or methacrylic acid.
    [18] Among the monomers described above, groups which are deblocked due to the action of acids contain alicyclic groups such as 2-alkyl-2-adamantyl and 1- (1-adamantyl) -1-alkylalkyl It is preferably used because having a bulky group exhibits excellent resolution. Examples of monomers having a bulky group containing an alicyclic group include (meth) acrylic acid 2-alkyl-2-adamantyl, (meth) acrylic acid 1- (1-adamantyl) -1-alkylalkyl, 5- Norbornene-2-carboxylic acid 2-alkyl-2-adamantyl and 5-norbornene-2-carboxylic acid 1- (1-adamantyl) -1-alkylalkyl.
    [19] Among other things, it is preferable to use (meth) acrylic acid 2-alkyl-2-adamantyl as its monomer for its excellent resolution. Typical examples of (meth) acrylic acid 2-alkyl-2-adamantyl include 2-methyl-2-adamantyl acrylate, 2-methyl-2-adamantyl methacrylate and 2-ethyl-2-adamant acrylate. Methyl, 2-ethyl-2-adamantyl methacrylate and 2-n-butyl-2-adamantyl acrylate. Among others, 2-methyl-2-adamantyl acrylate and 2-methyl-2-adamantyl methacrylate are preferable.
    [20] Another monomer having a group which is deblocked due to the action of the acid can also be used if necessary.
    [21] The resins according to the invention may also have polymerized units derived from monomers which do not have any groups which are deblocked due to the action of acids. Examples of such monomers include (meth) acrylic acid esters, cycloaliphatic olefins, unsaturated dicarboxylic anhydrides, and (meth) acrylonitrile. Specifically, the following compounds are included:
    [22] 3-hydroxy-1-adamantyl acrylate,
    [23] 3-hydroxy-1-adamantyl methacrylate,
    [24] 3,5-dihydroxy-1-adamantyl acrylate,
    [25] 3,5-dihydroxy-1-adamantyl methacrylate,
    [26] α-acryloyloxy-γ butyrolactone,
    [27] α-methacryloyloxy-γ-butyrolactone,
    [28] β-acryloyloxy-γ-butyrolactone,
    [29] β-methacryloyloxy-γ-butyrolactone,
    [30] 5-acryloyloxy-2,6-norborene carbolactone,
    [31] 5-methacryloyloxy-2,6-norbornene carbolactone,
    [32] 2-norbornene,
    [33] 2-hydroxy-5-norbornene,
    [34] 5-norbornene-2-carboxylate,
    [35] Methyl 5-norbornene-2-carboxylate,
    [36] 5-norbornene-2-carboxylate-t-butyl,
    [37] 1-cyclohexyl-1-methylethyl 5-norbornene-2-carboxylate,
    [38] 1- (4-methylcyclohexyl) -1-methylethyl 5-norbornene-2-carboxylate,
    [39] 1- (4-hydroxycyclohexyl) -1-methylethyl 5-norbornene-2-carboxylate,
    [40] 1-methyl-1- (4-oxocyclohexyl) ethyl 5-norbornene-2-carboxylate,
    [41] 1- (1-adamantyl) -1-methylethyl 5-norbornene-2-carboxylate,
    [42] 1-methylcyclohexyl 5-norbornene-2-carboxylate,
    [43] 2-methyl-2-adamantyl 5-norbornene-2-carboxylate,
    [44] 2-ethyl-2-adamantyl 5-norbornene-2-carboxylate,
    [45] 2-hydroxy-1-ethyl 5-norbornene-2-carboxylate,
    [46] 5-norbornene-2-methanol,
    [47] 5-norbornene-2,3-dicarboxylic anhydride, etc.,
    [48] Maleic anhydride and
    [49] Itaconic anhydride.
    [50] The resin used in the present invention varies depending on the type of radiation used for exposure for patterning and the type of other polymerized units contained as necessary, but preferably 5 to 50 mol% of the monomer of Formula 1 is combined with other monomers. Obtained by superposition | polymerization as needed.
    [51] Copolymerization can be carried out by conventional methods. For example, the copolymer resins specified in the present invention dissolve the required monomers in an organic solvent and azo compounds (e.g. 2,2'-azo-bisisobutyronitrile or dimethyl 2,2'-azobis (2-methylprop). It can be obtained by polymerizing it in the presence of a polymerization initiator). After the reaction, it is advantageous to reprecipitate and purify it.
    [52] An acid generator, which is another component of the resist composition, is a substance that is decomposed to generate an acid by applying radiation such as light, a cell beam, or the like to the material itself or a resist composition containing the material. The acid generated from the acid generator acts on the resin to cleave groups that can be cleaved by the action of the acid present in the resin.
    [53] Such acid generators include, for example, other onium salt compounds, organo-halogen compounds, sulfone compounds, sulfonate compounds and the like.
    [54] Specific examples of this are
    [55] Diphenyl iodonium trifluoromethanesulfonate,
    [56] 4-methoxyphenylphenyl iododonium hexafluoroantimonate,
    [57] 4-methoxyphenylphenyl iododonium trifluoromethanesulfonate,
    [58] Bis (4-tert-butylphenyl) iodonium tetrafluoroborate,
    [59] Bis (4-tert-butylphenyl) iodonium hexafluorophosphate,
    [60] Bis (4-tert-butylphenyl) iodonium hexafluoroantimonate,
    [61] Bis (4-tert-butylphenyl) iodonium trifluoromethanesulfonate,
    [62] Bis (4-tert-butylphenyl) iodonium camphorsulfonate,
    [63] Triphenylsulfonium hexafluorophosphate,
    [64] Triphenylsulfonium hexafluoroantimonate,
    [65] Triphenylsulfonium trifluoromethanesulfonate,
    [66] 4-methoxyphenyldiphenylsulfonium hexafluoroantimonate,
    [67] 4-methoxyphenyldiphenylsulfonium trifluorosulfonate,
    [68] p-tolyldiphenylsulfonium trifluoromethanesulfonate,
    [69] p-tolyldiphenylsulfonium perfluorobutanesulfonate,
    [70] p-tolyldiphenylsulfonium perfluorooctanesulfonate,
    [71] 2,4,6-trimethylphenyldiphenylsulfonium trifluoromethanesulfonate,
    [72] 4-tert-butylphenyldiphenylsulfonium trifluoromethanesulfonate,
    [73] 4-phenylthiophenyldiphenylsulfonium hexafluorophosphate,
    [74] 4-phenylthiophenyldiphenylsulfonium hexafluoroantimonate,
    [75] 1- (2-naphthoylmethyl) thioranium hexafluoroantimonate,
    [76] 1- (2-naphthoylmethyl) thioranium trifluoromethanesulfonate,
    [77] 4-hydroxy-1-naphthyldimethylsulfonium hexafluoroantimonate,
    [78] 4-hydroxy-1-naphthyldimethylsulfonium trifluoromethanesulfonate,
    [79] Cyclohexylmethyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate,
    [80] Cyclohexylmethyl (2-oxocyclohexyl) sulfonium perfluorobutanesulfonate,
    [81] Cyclohexylmethyl (2-oxocyclohexyl) sulfonium perfluorooctanesulfonate,
    [82] 2-methyl-4,6-bis (trichloromethyl) -1,3,5-triazine,
    [83] 2,4,6-tris (trichloromethyl) -1,3,5-triazine,
    [84] 2-phenyl-4,6-bis (trichloromethyl) -1,3,5-triazine,
    [85] 2- (4-chlorophenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [86] 2- (4-methoxyphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [87] 2- (4-methoxy-1-naphthyl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [88] 2- (benzo [d] [1,3] dioxolan-5-yl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [89] 2- (4-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [90] 2- (3,4,5-trimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [91] 2- (3,4-dimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [92] 2- (2,4-dimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [93] 2- (2-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [94] 2- (4-butoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [95] 2- (4-pentyloxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine,
    [96] Diphenyl disulfone,
    [97] Di-p-tolyl disulfone,
    [98] Bis (phenylsulfonyl) diazomethane,
    [99] Bis (4-chlorophenylsulfonyl) diazomethane,
    [100] Bis (p-tolylsulfonyl) diazomethane,
    [101] Bis (4-tert-butylphenylsulfonyl) diazomethane,
    [102] Bis (2,4-xylylsulfonyl) diazomethane,
    [103] Bis (cyclohexylsulfonyl) diazomethane,
    [104] (Benzoyl) (phenylsulfonyl) diazomethane,
    [105] 1-benzoyl-1-phenylmethyl-p-toluenesulfonate (so-called benzointosylate),
    [106] 2-benzoyl-2-hydroxy-2-phenylethyl p-toluenesulfonate (so-called α-methylolbenzointosylate),
    [107] 1,2,3-benzenetriyl trimethanesulfonate,
    [108] 2,6-dinitrobenzyl p-toluenesulfonate,
    [109] 2-nitrobenzyl p-toluenesulfonate,
    [110] 4-nitrobenzyl p-toluenesulfonate,
    [111] N- (phenylsulfonyloxy) succinimide,
    [112] N- (trifluoromethylsulfonyloxy) succinimide,
    [113] N- (trifluoromethylsulfonyloxy) phthalimide,
    [114] N- (trifluoromethylsulfonyloxy) -5-norbornene-2,3-dicarboxyimide,
    [115] N- (trifluoromethylsulfonyloxy) naphthalimide,
    [116] N- (10-camphorsulfonyloxy) naphthalimide and the like.
    [117] In addition, in chemically amplified positive resist compositions, the addition of basic compounds, in particular basic nitrogen-containing organic compounds such as amines, as a quencher generally reduces performance degradation due to deactivation of the acid decomposed by leaving after exposure. You can. It is also preferable to add such a basic compound in the present invention. Specific examples of the basic compound used as the quencher include a compound of the formula:
    [118]
    [119] [Wherein R 11 , R 12 and R 17 are each independently aryl or alkyl optionally substituted with hydrogen, cycloalkyl, hydroxyl, amino optionally substituted with alkyl having 1 to 6 carbon atoms or having 1 to C atoms. 6 is alkoxy, R 13 , R 14 and R 15 are the same or different from each other and may be optionally substituted with alkoxy or alkyl, alkyl having 1 to 6 carbon atoms, which may be optionally substituted with hydrogen, cycloalkyl, aryl, hydroxyl Amino or alkoxy having 1 to 6 carbon atoms, R 16 is cycloalkyl or alkyl which may be optionally substituted with hydroxyl, amino or alkoxy having 1 to 6 carbon atoms, which may be optionally substituted with alkyl having 1 to 6 carbon atoms, A Is alkylene, carbonyl, imino, sulfide or disulfide]
    [120] Alkyl represented by R 11 to R 17 and alkoxy represented by R 13 to R 15 may have about 1 to 6 carbon atoms. The cycloalkyl of R 11 to R 17 may have about 5 to 10 carbon atoms, and the aryl of R 11 to R 15 and R 17 may have about 6 to 10 carbon atoms. The alkylene represented by A may have about 1 to 6 carbon atoms, and may be linear or branched.
    [121] The resist composition of the present invention preferably contains a resin in an amount of 80 to 99.9% by weight and an acid generator in an amount of 0.1 to 20% by weight based on the total weight of the resin and the acid generator. When the basic compound is used as a quencher, it is preferably contained in an amount in the range of 0.001 to 1 part by weight, more preferably 0.01 to 0.3 part by weight per 100 parts by weight of the resin. The composition may also contain small amounts of various additives, such as sensitizers, dissolution inhibitors, resins other than the above resins, surfactants, stabilizers and dyes, if necessary, unless otherwise detrimental to the object of the invention. It may be.
    [122] The resist composition of the present invention generally becomes a resist liquid in which the above-described components are dissolved in a solvent and applied to a substrate such as a silicon wafer. The solvent used herein may be one that dissolves each component, a drying rate is suitable, provides a uniform and smooth coating after evaporation of the solvent, and may be one commonly used in this field.
    [123] Examples thereof include glycol ether esters such as ethylcellosolve acetate, methylcellosolve acetate and propylene glycol monomethyl ether acetate, esters such as ethyl lactate, butyl acetate, amyl acetate and ethyl pyruvate, ketones Examples: acetone, methyl isobutyl ketone, 2-heptanone and cyclohexanone) and cyclic esters such as γ-butyrolactone. Such solutions may be used alone or in combination of two or more thereof.
    [124] The resist film applied to the substrate and dried is exposed to light for patterning. Subsequently, after the heat treatment to promote the deprotection deblocking reaction, development with an alkaline developer is carried out. The alkaline developer used herein may be various kinds of aqueous alkali solutions used in the art. In general, aqueous solutions of tetramethylammonium hydroxide or (2-hydroxyethyl) trimethylammonium hydroxide (so-called choline) are often used.
    [125] The invention is described in more detail by way of examples, but should not be construed as limiting the scope of the invention to the examples. All parts in the examples are parts by weight unless otherwise noted. The weight average molecular weight is a value measured from gel permeation chromatography using polystyrene as a reference standard.
    [126] Resin synthesis example 1 (synthesis of resin A1)
    [127] 2-Methyl-2-adamantyl-methacrylate, 3-hydroxy-1-adamantyl methacrylate and 3-vinyl-γ-butyrolactone were 2: 2: 1 (20.0 g: 10.1 g: 4.8 g), and methyl isobutyl ketone equivalent to 2 weight times the total monomer is added to obtain a solution. In addition, azo-bisisobutyronitrile corresponding to 3 mol% of the total monomers is added as an initiator. Then it is heated to 80 ° C. and stirred for 15 hours. After cooling the reaction mass, it is purified by precipitation three times with a large amount of methanol to obtain a copolymer having a weight average molecular weight of about 8000. This copolymer is called Resin A1 below.
    [128] Resin synthesis example 2 (synthesis of resin AX)
    [129] 2-methyl-2-adamantyl-methacrylate, 3-hydroxy-1-adamantyl methacrylate and α-methacryloyloxy-γ-butyrolactone were added at 5: 2.5: 2.5 (20.0 g). 10.1 g: 7.8 g), and methyl isobutyl ketone corresponding to 2 weight times of the total monomers is added to obtain a solution. In addition, azobis isobutyronitrile corresponding to 2 mol% of the total monomers is added as an initiator. Then it is heated at 85 ° C. for about 8 hours. Subsequently, the precipitate was purified three times with a large amount of heptane to obtain a copolymer having a weight average molecular weight of about 14500. This copolymer is called Resin AX below.
    [130] Then, a resist composition is prepared using the acid generator and the quencher shown below in addition to each of the resins obtained in the previous resin synthesis example. The evaluation result thereof is shown below.
    [131] Example 1 and Comparative Example 1
    [132] The following components are mixed, dissolved, and filtered through a fluorine resin filter having a pore diameter of 0.2 µm to prepare a resist liquid.
    [133] Resin (Types see Table 1) 10 parts
    [134] Acid generator: 0.2 parts of p-tolyldiphenylsulfonium perfluorooctane sulfonate
    [135] Quencher: 2,6-diisopropyl aniline0.0075parts
    [136] Solvent: Propylene glycol monomethyl ether acetate 57 parts
    [137] γ-butyrolactone 3part
    [138] The organic antireflective coating composition ARC-25-8 (brewer) was coated on the silicon wafer and baked at 215 ° C. for 60 seconds to form an organic antireflective coating having a thickness of 780 kPa. The resist liquid prepared as described above is spin-coated and applied thereon so as to have a thickness of 0.39 μm after drying. After applying the resist, it is prebaked directly on a hot plate at 130 ° C. for 60 seconds. The wafer thus provided with the resist film was exposed to radiation using an ArF excimer stepper ("NSR ArF", manufactured by NICON, NA = 0.55, sigma = 0.6) to change the exposure dose step-by-line. and-space) patterns.
    [139] After exposure, it is post-exposure baked at 130 ° C. for 60 seconds on a hot plate, followed by paddle development for 60 seconds using a 2.38 wt% aqueous solution of tetramethylammonium hydroxide.
    [140] The line-and-space pattern on the organic antireflective film substrate after development is observed with a scanning electron microscope, and the effective sensitivity and resolution are measured by the following method. The results are shown in Table 1.
    [141] Effectiveness Sensitivity: The exposure amount at which the line-and-space pattern of 0.18 mu m becomes 1: 1.
    [142] Resolution: The minimum size of a line-and-space pattern separated by the exposure dose of effective sensitivity.
    [143] Measurement of Dry Etch Tolerance
    [144] A hexamethyldisilazane treated silicon wafer was spin coated with the resist liquid prepared above to give a thickness of 0.5 탆 after drying. The wafer coated with the resist liquid was prebaked directly on the hot plate for 60 seconds under the condition of 130 ° C, and then post-exposure baked without exposure on the hot plate for 60 seconds under the condition of 130 ° C, and then tetramethyl ammonium hydroxide Paddle develop for 60 seconds with 2.38 wt% aqueous solution.
    [145] After development, the wafer is etched with DEM-451 (ANELVA Corp.) using a mixed gas of 2.5 sccm of oxygen and 50 sccm of CHF 3 for 4 minutes at a vacuum of 16 Pa and generating power of 250 W. The film thickness difference before and after etching is expressed as a ratio to that obtained using a novolak resin (resist to I-line). Smaller values indicate higher dry etch resistance. Film thickness is measured by Lambda Ace (Dainippon Screen Mfg. Co. Ltd.).
    [146] numberSuzyEffectiveness sensitivity (mJ / ㎠)Resolution (μm)Dry etching resistance Example 1A1740.141.1 Comparative Example 1AX430.141.4
    [147] As shown in Table 1, the resist of Example 1 has excellent performance balance and high dry etching resistance.
    [148] The chemically amplified positive resist composition of the present invention is excellent in balance between resolution and sensitivity performance, and has high dry etching resistance. Thus, the composition shows good performance as a resist for KrF and ArF excimer lasers.
    权利要求:
    Claims (9)
    [1" claim-type="Currently amended] A chemically amplified positive resist composition having a polymer unit derived from a monomer of formula (1) and comprising an acid generator and a resin which is insoluble in the alkali itself but becomes alkali soluble due to the action of acid.
    Formula 1

    In Formula 1 above,
    R 1 and R 2 are independently hydrogen or an alkyl group having 1 to 4 carbon atoms,
    R 3 is hydrogen or a methyl group.
    [2" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 1, comprising an amount of 80 to 99.9% by weight of resin and an amount of 0.1 to 20% by weight of acid generator, based on the total weight of the resin and the acid generator.
    [3" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 1, wherein the molar ratio of the polymerized units derived from the monomer of formula (1) is 5 to 50% of the total polymerized units.
    [4" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 1, wherein the resin contains a polymer unit having a group which is deblocked due to the action of an acid.
    [5" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 4, wherein the group deblocked due to the action of an acid is 2-alkyl-2-adamantyl acrylate or 2-alkyl-2-adamantyl methacrylate.
    [6" claim-type="Currently amended] The method of claim 5, wherein the 2-alkyl-2-adamantyl or 2-alkyl-2-adamantyl acrylate is 2-methyl-2-adamantyl or 2-methyl-2-methacrylate. Adamantyl, chemically amplified positive resist composition.
    [7" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 1, further comprising a basic compound as a quencher.
    [8" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 7, wherein the basic compound is contained in an amount of 0.001 to 1 part by weight per 100 parts by weight of the resin.
    [9" claim-type="Currently amended] The chemically amplified positive resist composition according to claim 1, wherein the monomer of Formula 1 is a compound of Formula 2.
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    US20020168583A1|2002-11-14|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-03-15|Priority to JP2001073810A
    2001-03-15|Priority to JPJP-P-2001-00073810
    2002-03-12|Application filed by 스미또모 가가꾸 고교 가부시끼가이샤
    2002-09-26|Publication of KR20020073389A
    2009-03-16|Application granted
    2009-03-16|Publication of KR100888557B1
    优先权:
    申请号 | 申请日 | 专利标题
    JP2001073810A|JP4524940B2|2001-03-15|2001-03-15|Chemically amplified positive resist composition|
    JPJP-P-2001-00073810|2001-03-15|
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