• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
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    • 专利摘要:
    PURPOSE: An epoxy resin composition for sealing a semiconductor device is provided to improve a laser marking characteristic and prevent a crack by using an ortho-cresol-novolac resin and a diglycidyl-hexamethyl-biphenyl epoxy resin as an epoxy resin and a metal complex compound of azo series as a coloring agent. CONSTITUTION: An epoxy resin composition for sealing a semiconductor device includes an epoxy resin, a hardener, a hardening accelerator, an inorganic filler, a coloring agent, and a flame retardant as necessary ingredients. A mixture of an ortho-cresol-novolac resin and a diglycidyl-hexamethyl-biphenyl epoxy resin is used as the epoxy resin. A metal complex compound of azo series is used as the coloring agent. Total contents of the epoxy resins are 5 to 15 weight percent. The contents of the diglycidyl-hexamethyl-biphenyl epoxy resin of the epoxy resins are 1 to 8 weight percent.
    公开号:KR20020052688A
    申请号:KR1020000082117
    申请日:2000-12-26
    公开日:2002-07-04
    发明作者:김재신
    申请人:안복현；제일모직주식회사；
    IPC主号:
    专利说明:

    Epoxy resin composition for encapsulating semiconductor device
    [1] The present invention relates to an epoxy resin composition for sealing semiconductor devices, and more particularly, ortho cresol novolac resin and / or diglycidyl hexamethyl biphenyl epoxy resin, phenol novolac resin and / or cyclopentadiene resin, The present invention relates to an epoxy resin composition for sealing a semiconductor device, including a curing accelerator, an inorganic filler, an azo metal complex, and a flame retardant, which has enhanced adhesion and crack resistance to a wafer chip surface and improved type definition of laser marking.
    [2] In recent years, the degree of integration of semiconductor devices has been improved day by day, and thus the size of wirings, the size of devices and the size of multilayer wirings are rapidly progressing. On the other hand, in the case of the package which protects a semiconductor element from an external environment, compactness and thickness reduction are accelerating from the viewpoint of high-density mounting to a printed board, ie, surface mounting.
    [3] As described above, in a resin-sealed semiconductor device in which a large semiconductor device is sealed in a small and thin package, the frequency of failure due to a package crack or an aluminum pad becomes very high due to thermal stress caused by temperature and humidity changes in the external environment. There is a problem that vision errors occur frequently due to the lack of type definition in the marking process.
    [4] In order to solve this problem, there is a strong need to develop a method for improving the reliability of the epoxy resin composition for sealing semiconductor devices, and as a specific method, various rubber components, in particular, a modifier such as a silicone polymer having excellent thermal stability A method for achieving low elasticity by adding (see Japanese Patent Application Laid-Open No. 63-1894, Japanese Patent Application Laid-open No. Hei 5-291436), and a method for improving the laser marking characteristics by controlling the content and particle size distribution of the filler have been proposed. come.
    [5] However, conventional methods that rely only on carbon black as colorants have not been able to fundamentally improve the laser marking clarity of small, thin packages.
    [6] An object of the present invention is to solve the above problems of the prior art, using an ortho cresol novolak resin and diglycidyl hexamethyl biphenyl epoxy resin as an epoxy resin, and using an azo metal complex compound as a colorant The present invention provides an epoxy resin composition for sealing semiconductor elements with improved laser marking properties and crack resistance.
    [7] That is, the present invention is an epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, a colorant, and a flame retardant as essential components, wherein the epoxy resin is an ortho cresol novolac resin of Formula 1 and By using a mixture of diglycidyl hexamethyl biphenyl epoxy resin and using an azo-based metal complex compound as the colorant, an epoxy resin composition for semiconductor element sealing excellent in laser marking properties and crack resistance is provided.
    [8]
    [9] (G in the formula is a glycidyl group, R is a methyl group or a hydroxyl group, n is 0 to 5)
    [10]
    [11] (Wherein R is a methyl group or a hydrogen group, n is 0-3)
    [12] Hereinafter, the present invention will be described in more detail.
    [13] The epoxy resin composition for sealing a semiconductor device of the present invention includes an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, a coloring agent, and a flame retardant. The components of the epoxy resin composition of the present invention will be described in more detail as follows.
    [14] The epoxy resin (hereinafter referred to as component (1)) used in the present invention is an ortho cresol novolak resin of formula (1), a diglycidyl hexamethyl biphenyl epoxy resin of formula (2) or a mixture thereof.
    [15] [Formula 1]
    [16]
    [17] (G in the formula is a glycidyl group, R is a methyl group or a hydroxyl group, n is 0 to 5)
    [18] [Formula 2]
    [19]
    [20] (Wherein R is a methyl group or a hydrogen group, n is 0-3)
    [21] The diglycidyl hexamethyl biphenyl epoxy resin in the component (1) is a high purity epoxy resin having an epoxy equivalent of 190 to 230 and a softening point of 70 to 110 ° C, which is 2,2 ', 3,3', 5,5 It is obtained by adding epichlorohydrin to '-hexamethyl-4,4'-biphenol and ring-opening at low temperature. Detailed preparation methods are described in the following preparation examples.
    [22] The diglycidyl hexamethyl biphenyl epoxy resin thus obtained has a rigid skeleton structure and is superior in mechanical strength and shrinkage properties as compared to conventional biphenyl epoxy resins. Significant improvement can be obtained, and there is an advantage of improving adhesion to the chip as well as improving crack resistance during curing.
    [23] The content of the component (1) is preferably 5 to 15% by weight based on the total composition, wherein the content of diglycidyl hexamethyl biphenyl epoxy resin in the component (1) is 1 to 8% by weight based on the total composition. It is preferable that it is%.
    [24] The curing agent (hereinafter referred to as component (2)) usable in the present invention is a phenol novolak resin, a cyclopentadiene resin of the formula (3) or a mixture thereof.
    [25]
    [26] (Wherein R is a methyl group or a hydrogen group, n is 0-4)
    [27] The content of the component (2) is preferably 1 to 10% by weight based on the total composition, when out of the above range, a large amount of unreacted epoxy group or phenol group is generated, resulting in poor reliability.
    [28] The curing accelerator (hereinafter referred to as component (3)) used in the present invention is a component necessary for promoting the curing reaction of the component (1) and the component (2), for example benzyldimethylamine, triethanolamine, triethylene Tertiary amines such as diamine, dimethylaminoethanol and tri (dimethylaminomethyl) phenol; And organic phosphines such as triphenylphosphine, diphenylphosphine, and phenylphosphine, and the like, and one or two or more thereof may be used alone or in combination.
    [29] The content of the component (3) is preferably 0.1 to 0.3% by weight based on the total composition.
    [30] In the present invention, the curing rate may be adjusted by introducing a latent curing catalyst in addition to the curing accelerator. The latent curing catalyst (hereinafter referred to as component (4)) is a necessary component to properly control the curing rate due to the increased reaction rate due to the introduction of diglycidyl hexamethyl biphenyl epoxy resin, for example triazine isocyanate. Dazole compounds; And triphenylphosphine adducts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate, and one or two or more of these may be used alone or in combination.
    [31] The content of component (4) is preferably 0.05 to 0.4% by weight based on the total composition.
    [32] As the inorganic filler (hereinafter referred to as component (5)) used in the present invention, it is preferable to use fused or synthetic silica having an average particle size of 0.1 to 35.0 µm.
    [33] The content of the component (5) is preferably 70 to 90% by weight based on the whole composition. If the content is less than 70% by weight, not only sufficient strength and low thermal expansion can be realized, but also moisture is easily penetrated, which is fatal to reliability deterioration. On the other hand, when the content exceeds 90% by weight, the flow characteristics of the composition are lowered, which is not good because there is a fear of poor moldability.
    [34] The colorant used in the present invention (hereinafter referred to as component (6)) is an azo-based metal complex having one or two or more azo groups, and the metal component of the metal complex may be any metal capable of coordinating bonding. Preference is given to using azo metal complex compounds of the formula (4) or (5).
    [35]
    [36] (Wherein R is Cr, Co or Mn atom)
    [37]
    [38] (Wherein R is Cr, Co or Mn atom)
    [39] The content of the component (6) is preferably 0.05 to 2% by weight based on the total composition. If the content is less than 0.05% by weight, sufficient laser marking improvement cannot be obtained. If the content is more than 2% by weight, it is difficult to maintain reliability under severe conditions for a prescribed time in forming a semiconductor package.
    [40] In the present invention, the azo-based metal complex compound may be used as a colorant by mixing with a conventional organic and / or inorganic colorant, wherein the content of the azo-based metal complex compound is 20% by weight or more based on the total colorant.
    [41] Flame retardants used in the present invention (hereinafter referred to as component (7)) 100 parts by weight of polyglycidyl ether brominated phenol epoxy having an epoxy equivalent of 250 to 300 and a bromine content of 35 to 40% by weight and 20 to 40 weight of antimony trioxide It is preferable to mix and use a part.
    [42] The content of component (7) is preferably 0.8 to 1.5% by weight based on the total composition. If the content is less than 0.8% by weight can not achieve the flame retardancy of the UL94 V-O level, if it exceeds 1.5% by weight in the high temperature, high pressure and high humidity environment is not good because the chip corrosion caused by bromine and antimony trioxide.
    [43] In addition, the epoxy resin composition of the present invention includes a release agent such as higher fatty acids, natural fatty acids, paraffin wax, ester wax; Crosslinking enhancers; Flame retardant aids; And a labeling agent etc. can also be added as needed.
    [44] The epoxy resin composition of the present invention is uniformly mixed using the above-mentioned components using a Henssel mixer or Loedige mixer, and then melt kneaded with a roll mill or kneader, cooled and Through the grinding process, it is made into a final powder product.
    [45] As a method of sealing a semiconductor device using the epoxy resin composition prepared as described above, a low pressure transfer molding method is most commonly used, but molding may also be performed by injection or casting.
    [46] Hereinafter, the present invention will be described in more detail with reference to examples, but these examples are for illustrative purposes only and should not be construed as limiting the present invention.
    [47] Production Example
    [48] Into a round-necked flask, 0.3 mol of 2,2 ', 3,3', 5,5'-hexamethyl-4,4'-biphenol and 6.0 mol of epichlorohydrin were added, followed by aqueous tetraammonium chloride solution at 100 ° C. The reaction was carried out for 8 hours under a nitrogen atmosphere while slowly dropping the mole. Then, the temperature was lowered to 5 ° C. or lower, 50% aqueous sodium hydroxide solution was added, and the reaction was continued for 4 hours while maintaining the temperature. After the reaction was completed, an aqueous methanol solution was added to the reaction mixture, which was then vigorously stirred, followed by purification and drying to obtain diglycidyl hexamethyl biphenyl epoxy resin used in the present invention.
    [49] Examples 1-3
    [50] As shown in Table 1 below, each component was weighed, and then uniformly mixed with a Henschel mixer to prepare a primary composition in powder form, melt kneaded at 100 ° C. within 10 minutes using a kneader, and then cooled and ground. The final epoxy resin composition was prepared through the process. The epoxy resin composition thus obtained was molded into a SMD (surface mount) type SOT package semiconductor device at 175 ° C. for 60 seconds using an MPS (Multi Plunger System) molding machine, followed by post-curing at 175 ° C. for 3 hours to produce a specimen. . Physical properties were evaluated for each of the specimens, and the evaluation results are shown in Table 1 below.
    [51] Comparative Examples 1 to 3
    [52] After weighing each component as shown in Table 2 below, an epoxy resin composition was prepared in the same manner as in the above Examples, and a specimen was prepared. The physical properties of each of the specimens thus obtained were evaluated, and the evaluation results are shown in Table 2 below.
    [53] CompositionExample 1Example 2Example 3 Ortho Cresol Noble Epoxy Resin8.505.101.40 Diglycidylhexamethylbiphenyl epoxy resin4.706.705.12 Brominated epoxy0.760.800.73 Antimony trioxide0.150.200.3 Cyclo Pentadiene Curing Agent1.853.403.00 Phenolic Noblec Hardener6.203.040.90 Triphenylphosphine0.170.120.10 Latent curing catalyst0.070.090.05 Silica77.0080.0087.80 Carbon black-0.200.30 Azo Metal Complex0.400.150.10 Carnauba Wax0.100.100.10 Blood wax0.100.100.10 CO 2 laser marking color developmentGreatGreatGood Yag laser marking color developmentGreatGreatGood definitionGreatGreatGood Cold shock evaluation (10% or more occurrence of package crack and chip peeling)After 100 cycles0/1000/1000/100 After 200 cycles0/1000/1000/100 After 300 cycles0/1000/1000/100
    [54] CompositionComparative Example 1Comparative Example 2Comparative Example 3 Ortho Cresol Noble Epoxy Resin11.505.00- Biphenyl epoxy resin-4.007.00 Brominated epoxy0.700.600.70 Antimony trioxide0.300.300.20 Cyclo Pentadiene Curing Agent--3.50 Phenolic Noblec Hardener5.504.10- Triphenylphosphine0.150.150.15 Silica81.0085.0087.60 Carbon black0.350.350.35 γ-glycithoxypropyltrimethoxysilane0.300.300.30 Laccarnauba Wax0.100.100.10 Blood wax0.100.100.10 CO 2 laser marking color developmentusuallyusuallyGood Yag laser marking color developmentInadequateInadequateusually definitionInadequateInadequateInadequate Cold shock evaluation (10% or more occurrence of package crack and chip peeling)After 100 cycles0/1000/1000/100 After 200 cycles12/1000/1000/100 After 300 cycles58/10016/1000/100
    [55] [Property evaluation method]
    [56] * Laser marking color development
    [57] : After marking the laser with a CO 2 PLUS type laser and a YAG laser, color development and clarity were evaluated.
    [58] * Cold Shock Test
    [59] : 100 ~ 200 and 300 cycles are severely tested for 10 minutes at high temperature (150 ℃) and low temperature (-65 ℃) with a Thermal Shock Tester, and package cracks and ultrasonic waves (C-SAM) are installed. The chip peeling state was observed.
    [60] As described in detail above, the epoxy resin composition for semiconductor element sealing of the present invention is not only excellent in crack resistance, but also excellent in clarity of laser marking, and thus is useful for manufacturing a small and thin package of a surface mount method.
    权利要求:
    Claims (6)
    [1" claim-type="Currently amended] In the epoxy resin composition for sealing a semiconductor device comprising an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, a colorant, and a flame retardant as essential components, wherein the epoxy resin is an ortho cresol novolac resin of Formula 1 and An epoxy resin composition for semiconductor element sealing, wherein a mixture of glycidyl hexamethyl biphenyl epoxy resin is used, and an azo metal complex compound is used as the colorant.
    [Formula 1]
    (G in the formula is a glycidyl group, R is a methyl group or a hydroxyl group, n is 0 to 5)
    [Formula 2]
    (Wherein R is a methyl group or a hydrogen group, n is 0-3)
    [2" claim-type="Currently amended] The method of claim 1,
    The content of the total composition of the epoxy resin is 5 to 15% by weight, the content of diglycidyl hexamethyl biphenyl epoxy resin in the epoxy resin is 1 to 8% by weight based on the total composition Epoxy resin composition for sealing.
    [3" claim-type="Currently amended] The method of claim 1,
    0.05 to 0.4% by weight of triazine isocyanate imidazole compound, tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, or a mixture thereof as a latent curing catalyst for controlling the curing rate in addition to the curing accelerator. Epoxy resin composition for semiconductor element sealing, further comprising.
    [4" claim-type="Currently amended] The method of claim 1,
    Epoxy resin composition for sealing a semiconductor device, characterized in that the azo metal complex compound has a structure of the formula (4) or (5).
    [Formula 4]
    (Wherein R is Cr, Co or Mn atom)
    [Formula 5]
    (Wherein R is Cr, Co or Mn atom)
    [5" claim-type="Currently amended] The method of claim 1,
    An epoxy resin composition for semiconductor element sealing, further comprising an organic colorant, an inorganic colorant, or a mixture thereof as a colorant in addition to the azo metal complex compound.
    [6" claim-type="Currently amended] The method of claim 5,
    The epoxy resin composition for sealing a semiconductor device, characterized in that the content of the azo-based metal complex compound in the colorant mixture is 20% by weight or more.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2000-12-26|Application filed by 안복현, 제일모직주식회사
    2000-12-26|Priority to KR1020000082117A
    2000-12-26|Priority claimed from KR1020000082117A
    2002-07-04|Publication of KR20020052688A
    2002-10-12|Application granted
    2002-10-12|Publication of KR100355303B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020000082117A|KR100355303B1|2000-12-26|Epoxy resin composition for encapsulating semiconductor device|
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