• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to a method and apparatus for forming a substantially uniform liquid layer on the surface of a top surface of a microelectronic substrate. The device may include a support that engages smaller than the entire lower surface of the microelectronic substrate to rotate the microelectronic substrate at a selected speed. The barrier can be rotated at the same rotational speed as the substrate to extend over the top surface of the microelectronic substrate to separate the rotating air population adjacent the inner surface and the top surface from the fixed air population outside the barrier. The rotating air population can reduce the likelihood of liquid / air interface disturbances creating non-uniformity in the liquid layer. Thus, the method and apparatus of the present invention can increase the range of thicknesses in which the liquid layer is formed and can plasticize the detailed geometric nonuniformity of the liquid layer.
    公开号:KR20020041418A
    申请号:KR1020027002606
    申请日:2000-08-28
    公开日:2002-06-01
    发明作者:시를리폴디.
    申请人:린치 마이클 엘.；마이크론 테크놀로지 인코포레이티드；
    IPC主号:
    专利说明:

    Method and apparatus for controlling air over a spinning microelectronic substrate
    [2] During the manufacture of microelectronic substrates such as memory chips, processor chips and field emission displays, an etching process is frequently used to form specific shapes on the microelectronic substrate or substrate assembly that forms the basis of the device. Conventional etching techniques include depositing a layer of photoresist material on a substrate to mask selected portions of the layer and to expose the unmasked portions to selected radiation. The selected radiation changes the solubility of the unmasked portions to be either soluble (in the case of positive photoresist) or insoluble (in the case of negative photoresist) when exposed to the selected solvent. The photoresist layer is then washed with a selected solvent to remove the exposed or unexposed photoresist material and expose a portion of the underlying substrate. The substrate is cleaned with an etchant that removes material from the exposed portions of the substrate, leaving portions of the substrate covered by the photoresist material intact.
    [3] Often, it is important to control the uniformity of the thickness at which photoresist material is deposited on the substrate. For example, when the photoresist material is deposited to a non-uniform thickness, certain portions of the photoresist material are overexposed to radiation, and other portions are in a state of insufficient exposure to radiation. If the photoresist material is overexposed, the edges between the masked and unmasked areas are smeared, making the process unsuitable for forming the microscopic shapes. If the photoresist material is underexposed, it may not have enough exposure time to change the solubility. Additionally, it may be desirable to maintain a relatively small overall thickness of the photoresist layer to increase the resolution of the shapes formed with this technique.
    [4] Photoresist material is typically deposited on a substrate or substrate assembly by placing the material in liquid form in the center of the substrate and spinning the substrate around its center to diffuse the materials outward by centrifugal force . A disadvantage of this technique is that the liquid photoresist material can interact with adjacent air masses to form ripples or other disturbances in the photoresist material, which affects the uniformity of the layer thickness. This problem is further exacerbated when the speed of the substrate increases, for example when the substrate rotates at high angular velocities and / or when the substrate has a large radius so that the linear velocity towards the edge of the substrate is high, even at moderate angular velocities. It is sharpened.
    [5] Another disadvantage of this technique is that the convective heat transfer rate changes over the surface of the substrate because the relative linear velocity between the substrate and the adjacent air population changes with distance from the substrate center. The change in heat transfer rate causes a change in the surface temperature of the substrate, which in turn causes the rate of evaporation of the fluid (and thus the thickness of the fluid) to change over the surface of the substrate.
    [6] Another disadvantage of this technique is that the speed chosen for the liquid photoresist material must take into account the rotational speed and diameter of the substrate. For example, for large substrates, a relatively viscous liquid may be selected to prevent the liquid from blowing out of the edge of the substrate before it has accumulated to a predetermined thickness. Such liquids may have too much viscosity for smaller substrates. Thus, the prior art typically uses liquids with different viscosities to form layers with different thicknesses. As an example, smaller viscous liquids can be used to form thinner layers, and higher viscous liquids can be used to form thicker layers. One problem with this approach is the need to control and / or adjust the viscosity of the liquid and to provide a number of liquid sources, each having a different viscosity. Additionally, because the angular velocity of the substrate is used to control the thickness of the liquid layer (eg, to increase the angular velocity to reduce the layer thickness), this technique allows liquids to wave or other disturbances at high angular velocities as described above. They have limitations because they can form.
    [7] 1 is a schematic partial broken partial side perspective view of a conventional device 10 having some of the above-described problems with rectangular substrates. The device 10 includes a motor 30 having a shaft 32 connected to a chuck 33 and a bowl 20. A substrate 12 having a rectangular planar shape is releasably mounted to the chuck 33 and both the substrate 12 and the bowl 20 are spun when the shaft 32 rotates. Thus, air adjacent to the substrate 12 is partially contained within the spinning bowl 20, so that at least some of the air is spun at the same speed as the substrate 12. A fluid supply conduit 23 places liquid onto the substrate 12 through the opening 24, and the liquid diffuses across the surface of the substrate 12 as the substrate 12 is spun. Excess liquid may be collected in the bowl 20 via the edge of the substrate 12 and removed from the bowl 20 via drain 21. Air is exhausted from the bowl 20 through the exhaust port 22.
    [8] One potential drawback of the device 10 shown in FIG. 1 is that the bowl 20 can be heavy and difficult to spin smoothly at high speeds. Additionally, drain 21 and exhaust port 22 may be connected to drain line 23a and exhaust line 23b, respectively, which are secured to bowl 20 by fluid-tight rotational coupling. Should be. In addition, the bowl 20 is partially open, so that when the substrate 12 rotates at high speed, it may take time to bring the air population adjacent to the substrate 12 to reach the same speed as the substrate 12. Can be.
    [9] 2 is a schematic partial broken partial side perspective view of another conventional device 10a that includes a motor 30a coupled to chuck 33a by shaft 32a. The chuck 33a includes a rectangular recess 36 for receiving a rectangular substrate 12. The lid 40 is releasably disposed on the chuck 33a to rotate with the substrate 12 and the chuck 33a. The lid 40 is fluidized from the fluid supply conduit 23 to the surface of the substrate 12. And an opening 41 to allow passage therethrough. The apparatus 10a has a drain 21 and an exhaust port 22 for removing liquid and gas from an area adjacent to the substrate 12 and adds a collection vessel 20a fixed to the motor 30a. It includes.
    [10] One problem with the apparatus 10a shown in FIG. 2 is that the liquid disposed on the substrate 12 has a lower surface of the substrate 12 and a wall of the recess 36 in which the substrate 12 is disposed therein. Can be captured in between. Another defect is that the recess 36 is sized with respect to the rectangular substrate 12, so that it is unsuitable for the round substrate or round, especially when the diameter of the round substrate exceeds the width of the recess 36. This makes the substrate unusable.
    [1] The invention relates, by way of example, to a method and apparatus for controlling the behavior of air on a spinning microelectronic substrate during application of liquid to the microelectronic substrate.
    [13] 1 is a schematic partial broken partial side perspective view of a device according to the prior art;
    [14] 2 is a schematic partial broken partial side perspective view of a device according to the prior art;
    [15] 3 is a schematic partial broken partial side perspective view of the device according to the invention;
    [16] 4 is a schematic partial broken partial side perspective view of the device according to the invention;
    [11] The present invention is directed to a method and apparatus for uniformly diffusing a liquid across the surface of a spinning microelectronic substrate. An apparatus according to one aspect of the invention may include a support for joining a microelectronic substrate and for rotating the microelectronic substrate at a first speed. The microelectronic substrate may have a first surface containing a liquid and a second surface facing away from the first surface having a coupling portion configured to bond smaller than the entire second surface. A rotation barrier adjacent to the support separates the first portion of the gas rotating with the microelectronic substrate adjacent the microelectronic substrate from the second portion of the gas substantially fixed relative to the microelectronic substrate and spaced apart from the microelectronic substrate. Rotate at a second speed substantially the same as the first speed.
    [12] In a method according to one aspect of the present invention, by placing a barrier to separate a first volume of rotating gas adjacent to the first surface from a substantially fixed second volume of gas, the liquid having a single viscosity has a first value. And may be distributed over the first surface of the substrate in a substantially uniform thickness ranging from to a second value that is 3000 dB greater than the first value. By way of example, the 3000 kV range may extend in the range of about 5000 kV to about 8000 kV or between about 7000 kV and about 10000 kV. The viscosity can be selected from about 6 cps to about 20 cps and the liquid can be distributed in varying thicknesses by less than 20 kPa.
    [17] The present invention relates to an apparatus and method for distributing liquid over surfaces of a microelectronic substrate and / or substrate assembly. Numerous details of specific embodiments of the invention are set forth in FIGS. 3 and 4 and the following detailed description to provide an understanding through these embodiments. However, those skilled in the art will appreciate that the present invention may have other additional embodiments, or may be practiced without some of the details described in the following description.
    [18] 3 is a schematic partial cutaway partial side perspective view of an apparatus 110 for spinning the substrate 112 and the barrier 140 at substantially the same speed to distribute liquid over the substrate 12 in accordance with an embodiment of the present invention. . The substrate 112 may have a substantially round flat plate shape and has a diameter of at least about 8 inches. For example, in one embodiment, the substrate 112 has a diameter of about 12 inches, and in another embodiment, the substrate 112 can be appropriately supported by the device 110 while the substrate is in a uniform manner. It can have other diameters and shapes as long as the liquid can be distributed on 112.
    [19] The device 110 may include a motor 130 having a drive shaft 132 coupled to the support assembly 131 to rotate the support assembly about the axis 136 as indicated by arrow A. The support assembly 131 may include a substrate support 133 supporting the substrate 112 so that the outer and upper surfaces 113 of the lower surface 114 of the substrate 112 are exposed. Thus, the substrate support 133 is less than the lateral extent of the substrate 112 in the same direction, i.e., the lateral direction perpendicular to the axis 136, in which the substrate 112 can protrude above the substrate support 133. It can have a range.
    [20] The support assembly 131 extends radially outward beyond the substrate support 133 and the substrate 112 to support and rotate the barrier support 134 that supports and rotates the barrier 140 when the matrix assembly 131 rotates. Additionally included. Barrier support 134 includes a plurality of spaced struts 135 to regulate radial movement of barrier 140 relative to barrier support 134. Alternatively, barrier 140 may rotate independently of substrate 112 as will be described in more detail below with reference to FIG. 4.
    [21] In one embodiment, the barrier 140 has a substantially circular planar shape and extends around it over the substrate 112 so that the static external air volume 150 outside the barrier 140 rotates inside the barrier 140. Separate from air volume 160. Thus, the barrier 140 is coupled to the drive shaft 132 via the barrier support 134 to spin at the same speed as the substrate 112. The barrier 140 includes an upper wall 145 that is substantially parallel to the upper surface 113 of the substrate 112. The barrier 140 also includes sidewalls 144 extending downward from the top wall 145 to the barrier support 134. In one aspect of this embodiment, the top wall 145 and the sidewall 144 are substrate 112 by a relatively small distance (enlarged for illustration in FIG. 3) to maintain a relatively small internal air volume 160. Spaced apart from For example, the top wall 145 may be spaced apart from the top surface 113 of the substrate 112 by a distance of at least about 1 mm to about 10 mm or some other distance. Sidewall 144 may be separated from outer edge 115 of substrate 112 by a distance of about 5 mm to about 10 mm or some other distance. The advantage of this shape is that it can reduce the time required to spin the internal air volume 160 to reach the same speed as the substrate 112.
    [22] The top wall 145 of the barrier 140 is aligned with the nozzle opening 124 of the liquid supply conduit 123 to allow liquid to descend from the nozzle opening 124 to the top surface 123 of the plate 112. Opening 141. The top surface 145 also includes an engaging portion 147 for positioning the barrier 140. By way of example, the device 110 includes a control arm 142 having a positioning head 143 for releasably engaging with the engaging portion 147 of the barrier 140. Once the positioning head 143 is engaged with the barrier 140, the control arm 142, for example, while removing or installing the substrate 112 from the substrate support 133, from the barrier support 134, and The barrier 140 can be moved toward it. In one aspect of this embodiment, the positioning head 143 may be coupled to a vacuum source (not shown) to grip the barrier 140 with suction force, with the control arm 142 towards the barrier support 134. And may be remotely operated to move the barrier 140 in a direction away therefrom. In other embodiments, the control arm 142 and positioning head 143 may have other devices for positioning the barrier 140.
    [23] The side wall 144 of the barrier 140 may be inclined to form a truncated cone, or alternatively, the side wall 144 may be vertical to form a cylindrical portion, or may have any other structure. Sidewalls 144 provide drain holes 146 adjacent to barrier support 134 positioned to allow liquid to flow out of substrate 112 to flow through the space between drain hole 146 and strut 135. It may include. In other embodiments, the barrier 140 may have other shapes and structures to separate the outer air volume 150 from the inner air volume 160 and to drain excess liquid out of the substrate 112. .
    [24] In one embodiment, the nozzle 112, the substrate 112, and the drive shaft so that the substrate 112 is spun around its center, and the nozzle opening 124 distributes the liquid to the center of the substrate upper surface 113. 132 are each aligned with axis 136. In one embodiment, the liquid supply conduit 123 may be coupled to a source of liquid (not shown) that includes a photoresist material for etching the substrate 112 as described above. Alternatively, liquid supply conduit 123 can be coupled to a source of other liquids.
    [25] The device 110 may further include a collection vessel 120, which is fixed relative to the motor 130 and drives the shaft 132 to collect excess liquid flowing from the substrate. And coaxially around the substrate 112. The collection vessel 120 may include a base 126 extending outwardly from the drive shaft 132 below the substrate 112 and a wall 125 extending upwardly around the substrate 112. Thus, the collection vessel 120 may collect liquid that flows over the edge 115 of the substrate 112 when the substrate 112 spins. The seal 127 between the drive shaft 132 and the base 126 prevents liquid collected in the collection vessel 120 from leaking around the drive shaft 132. Drain 121 under base 126 guides the collected liquid out of collection vessel 120 via drain tube 127. The collection vessel 120 may also include an exhaust port 122 having an adjustable flow zone for controlling air flow out of the collection vessel 125 past the substrate 112.
    [26] In a method according to an embodiment of the present invention, the control arm 142 positions the barrier 140 on the barrier support 134, and the substrate 112 and the barrier 140 have an internal air volume 160. Rotate together until spinning at substantially the same speed as 112). A liquid supply conduit 123 then places the liquid on the top surface 113 of the substrate 112, where the liquid flows outward under the influence of centrifugal force toward the edge of the substrate 112. In one aspect of this embodiment, the rotational speed of both the substrate 112 and the barrier 140 can reach 4,000 rpm, and in an additional aspect of this embodiment, the rotational speed is in the range of about 2,000 rpm to about 4,000 rpm. May be present or some other rotational speed.
    [27] In an alternative method, the liquid supply conduit 123 may be disposed on the substrate 112 before the substrate 112 is spun to reach an initial relative low speed with the barrier 140 in place. The initial rotational speed can be chosen lower than the lowest rate at which the liquid forms a non-uniform shape with the adjacent air population (eg, about 1,000 rpm). The control arm 142 then lowers the barrier 140 into place on the spinning barrier support 134 and releases the barrier 140. The rotational speed of the substrate 112 and the barrier 140 can be gradually increased at higher rpm, while simultaneously spinning the internal air volume 160 up to the same rotational speed of the substrate 112 and the barrier 140. Liquid may be diffused on face 113.
    [28] In another method, when the substrate 112 and the barrier 140 rotate, gas may be selectively removed from the internal air volume 160. By way of example, the exhaust port 122 can be opened continuously or periodically to evict gaseous or gas containing components from within the barrier 140. Accordingly, barrier 140 and / or barrier support 134 may have vents 148 that allow some fluid communication between internal air volume 160 and external air volume 150 (drain holes ( In addition to 146). By way of example, gas may pass through the drain hole 146 out of the internal air volume 160 and through the vent 148 into the internal air volume 160. Alternatively, barrier 140 may be periodically lifted from the barrier support to allow gas to escape from barrier 140.
    [29] In the method described above with reference to FIG. 3, the rotating internal air volume 160 is characterized by the fact that the liquid is undulated on the top surface 113 of the substrate 112, in particular toward the outer edge of the substrate 112, or other ratios. Reduces the tendency to form uniform shapes. Rotating internal air volume 160 also reduces the rate of convective heat transfer from substrate 112. Thus, the liquid can be deposited to a more uniform thickness over the entire top surface 113. For example, in one embodiment, the liquid may be deposited at a thickness varying from about 10 microns to about 30 microns across the surface of the substrate 112 having a diameter of 8 inches or more (even up to 12 inches or more). In other embodiments, the liquid may be deposited at a thickness varying by about 10 mm or less across the surface of the substrate 112, or the liquid may be deposited at a thickness having a different thickness variation on the substrate 112 having a different diameter. .
    [30] Additionally, a liquid having a single viscosity can be used to form a layer on the substrate 112 having a thickness in a range larger than possible without the barrier 140. For example, in one embodiment, a fluid having a single viscosity value between about 5 cps and 20 cps is within a range of about 3000 kPa on the substrate 112 (greater than 8 inches and having a diameter of at least 12 inches). It may be deposited to a selected uniform thickness. In one embodiment, a liquid having a viscosity of about 5 cp to about 10 cp is deposited on the substrate 112 at a thickness of about 5,000 kPa to about 8,000 kPa by rotating the substrate at a speed of about 2,000 rpm to about 4,000 rpm. Can be. The specific viscosity value and rotational speed selected to form the desired thickness can be selected based on factors such as the evaporation rate of the liquid. In another embodiment, by placing a liquid having a viscosity of about 10 cp to about 20 cp on the substrate 112 and rotating the substrate at about 2,000 rpm to about 4,000 rpm, the thickness is about 7,000 kPa to about 10,000 kPa It can be a range. This is different from conventional devices where the liquid supply conduit 123 must be connected to a plurality of liquid sources (each having a different viscosity) in order to deposit liquid layers of different thickness on different substrates 112.
    [31] Other features of the method and apparatus described above with reference to FIG. 3 eliminate the need for rotating the collection container 120, unlike conventional devices, while the substrate 112 is attached to the bottom surface 114 of the substrate 112. That is, it can be supported in a manner that does not capture fluid. Thus, the bottom surface 114 of the substrate 112 may remain relatively free of contaminants while liquid is deposited on the top surface 113. In addition, the device 110 may be simpler to manufacture and operate because the collection vessel 120 is fixed relative to the motor 130 and may be a rotary seal between the drain 121 and the drain line 127. Eliminates the need for wealth
    [32] 4 is a schematic partial cutaway side perspective view of a device 210 having a barrier 240 that rotates independently of the substrate 112 in accordance with another embodiment of the present invention. The device 210 includes a motor 230 having a drive shaft 232 coupled to a substrate support 233 for supporting a substrate 112. The drive shaft may rotate about axis 236 as indicated by arrow A in substantially the same manner as described above with reference to FIG. 3. The device 210 has a collection vessel 220 disposed in an angular direction around the substrate 112 and drive shaft 232 for collecting fluid and evacuating air substantially the same as described above with reference to FIG. 3. It may further comprise.
    [33] The barrier 240 includes a barrier shaft 247 extending upwardly and angularly around the liquid supply conduit 223. The barrier shaft 247 may be connected to the motor 249 (eg, via gears 248a and 248b) to rotate the barrier 240. Thus, the barrier 240 may rotate at a speed independent of the speed at which the substrate support 233 and the substrate 112 rotate. In one aspect of this embodiment, the speed at which barrier 240 rotates may match the speed at which substrate 112 rotates, such that internal air volume 260 within barrier 240 causes barrier 240 and substrate to rotate. Rotating with 112, the external air volume 250 can remain substantially static in substantially the same manner as described above with reference to FIG. 3.
    [34] In one embodiment, the flange 237 may be connected to the drive shaft 232 and extend radially outward below the substrate support 233. The barrier 240 extends over and around the substrate 112 and is spaced apart from the flange 237 to form an annular gap 238 between the flange and the barrier 240. In one embodiment, a plurality of nozzles 270 may be disposed in the gap 238 and may be connected to the cleaning fluid source 271. Accordingly, the nozzle 270 may direct the cleaning fluid toward the bottom surface 114 of the substrate 112 to remove contaminants from the bottom surface. In one embodiment, the source 271 may be connected to a temperature controller 272 to control the evaporation rate of the liquid disposed on the top surface 113 of the substrate 112 of the substrate 112 and the temperature of the substrate 112. Can be.
    [35] In an additional aspect of this embodiment shown in FIG. 4, the gap 238 between the barrier 240 and the flange 237 is a substrate after the barrier 240 has been disposed of, for example, liquid on the substrate 112. It may be lifted upwards to access substrate 112 to remove 112. In an additional aspect of this embodiment, the barrier 240 may be lifted with the control arm 242 with the positioning head 243 in substantially the same manner as described above with reference to FIG. 3. Alternatively, barrier shaft 247 may be directly connected to axial actuator 225 to move barrier 240 upwards and downwards.
    [36] A feature of the apparatus shown in FIG. 4 is that the barrier 240 can be rotated independently of the substrate 112 while the barrier 240 can still be rotated at the same speed as the substrate 1112. In contrast, a feature of the apparatus described above with reference to FIG. 3 is that the barrier 140 can rotate at the same speed as the substrate 112 at all times when the barrier 140 is supported by the barrier support 134. It is guaranteed to spin the internal air volume 160 at the same speed.
    [37] While specific embodiments of the invention have been described above for purposes of illustration, various modifications may be made without departing from the spirit and scope of the invention. For example, where the environment adjacent to the substrate includes gases other than air, the barrier described above with reference to FIGS. 3 and 4 may separate the other gas into an internal volume and an external volume. Accordingly, the invention is limited only by the appended claims.
    权利要求:
    Claims (63)
    [1" claim-type="Currently amended] A method for applying liquid to a microelectronic substrate having a first surface and a second surface facing away from the first surface, the method comprising:
    Supporting the substrate by bonding less than the entire second surface of the microelectronic substrate;
    Disposing a liquid on the first surface of the microelectronic substrate,
    A second velocity substantially equal to the first velocity without placing the barrier between the first and second volumes and rotating the vessel located below the microelectronic substrate to collect a portion of the liquid falling from the microelectronic substrate Rotating the barrier with the microelectron, thereby separating the first volume of rotating gas adjacent the first surface of the microelectronic substrate from the second volume of substantially static gas adjacent the first volume of the gas. Method of applying liquid to the substrate.
    [2" claim-type="Currently amended] The method of claim 1, wherein rotating the barrier comprises rotating the barrier at about 2,000 rpm to about 4,000 rpm,
    Distributing the liquid comprises forming a liquid layer having a variation in thickness in the range of about 10 mm 3 to about 30 mm 3,
    The method of applying a liquid further comprises selecting the microelectronic substrate to have a circular flat plate shape having a diameter of about 12 inches.
    [3" claim-type="Currently amended] The method of claim 1, wherein disposing the liquid on the first surface of the microelectronic substrate comprises placing the liquid on the first surface prior to rotating the microelectronic substrate,
    Positioning the barrier includes positioning the barrier adjacent the substrate after the substrate has rotated at a first speed, and rotating the microelectronic substrate and the barrier around the axis of rotation at a third speed greater than the first speed. The method of applying a liquid to a microelectronic substrate further comprising the step of accelerating.
    [4" claim-type="Currently amended] The liquid in a microelectronic substrate of claim 1, further comprising removing the barrier between the rotational volume of the gas and the substantially static volume of the gas after the liquid has moved onto the surface of the microelectronic substrate. How to apply it.
    [5" claim-type="Currently amended] The method of claim 1, wherein disposing the liquid comprises directing a stream of liquid through an opening in the barrier towards the substrate.
    [6" claim-type="Currently amended] The method of claim 1, further comprising: exhausting gas between the barrier and the substrate through a first opening in the barrier;
    Introducing a gas between the barrier and the substrate through a second opening in the shield.
    [7" claim-type="Currently amended] The method of claim 1, wherein disposing a liquid on the microelectronic substrate comprises disposing a photoresist material on the microelectronic substrate.
    [8" claim-type="Currently amended] The method of claim 1, wherein rotating the microelectronic substrate comprises rotating the microelectronic substrate to about 4,000 rpm.
    [9" claim-type="Currently amended] The method of claim 1, further comprising selecting the viscosity of the liquid to be about 5 cp to about 20 cp.
    [10" claim-type="Currently amended] The method of claim 1, wherein disposing the liquid is performed after the volume of air between the microelectronic substrate and the barrier is rotated at substantially the first speed.
    [11" claim-type="Currently amended] The method of claim 1, wherein disposing the liquid is performed before the microelectronic substrate is rotated.
    [12" claim-type="Currently amended] The method of claim 1, further comprising selecting the microelectronic substrate to have a substantially circular plate shape and a diameter greater than 8 inches.
    [13" claim-type="Currently amended] The method of claim 1, further comprising cleaning the bottom surface of the substrate with a cleaning liquid.
    [14" claim-type="Currently amended] 14. The method of claim 13, further comprising controlling the temperature of the cleaning liquid to control the rate of heat transfer to or from the bottom surface of the substrate.
    [15" claim-type="Currently amended] 2. The method of claim 1, wherein distributing the liquid to a substantially uniform thickness comprises forming a liquid layer having a thickness that varies to about 10 mm 3 or less.
    [16" claim-type="Currently amended] A method of applying liquid to a substantially circular microelectronic substrate having a diameter greater than about 8 inches,
    Supporting a bottom surface of the microelectronic substrate,
    Disposing a single liquid having a substantially uniform viscosity on the upper surface of the microelectronic substrate facing away from the lower surface;
    Substantially rotate the microelectronic substrate at a first speed about an axis of rotation of the microelectronic substrate and rotate the volume of air between the barrier and an upper surface of the microelectronic substrate at a substantially first speed. Rotating the barrier spaced apart from the top surface of the microelectronic substrate around the axis of rotation at the same second speed, thereby substantially uniformly ranging from a first value to a second value about 3,000 microseconds greater than the first value. A method of applying a liquid to a microelectronic substrate, the method comprising distributing a liquid over a top surface in thickness.
    [17" claim-type="Currently amended] 17. The liquid application of claim 16 wherein distributing the liquid comprises distributing the liquid over the top surface with a substantially uniform thickness having a value from about 5,000 mm 3 to about 8,000 mm 3. How to.
    [18" claim-type="Currently amended] 17. The liquid application of claim 16 wherein distributing the liquid comprises distributing the liquid over the top surface with a substantially uniform thickness having a value from about 7,000 mm 3 to about 10,000 mm 3. How to.
    [19" claim-type="Currently amended] 17. The method of claim 16, wherein rotating the microelectronic substrate comprises rotating the microelectronic substrate to reach about 4,000 rpm.
    [20" claim-type="Currently amended] 17. The method of claim 16, further comprising selecting a viscosity of the liquid to be between about 5 cp and about 20 cp.
    [21" claim-type="Currently amended] 17. The method of claim 16, further comprising selecting the liquid to include a photoresist material.
    [22" claim-type="Currently amended] 17. The method of claim 16, wherein disposing the liquid comprises guiding the liquid through an opening in the barrier.
    [23" claim-type="Currently amended] 17. The method of claim 16, wherein disposing the liquid is performed after the volume of air between the microelectronic substrate and the barrier is rotated at substantially the first speed.
    [24" claim-type="Currently amended] 17. The method of claim 16, wherein disposing the liquid is performed prior to rotating the microelectronic substrate.
    [25" claim-type="Currently amended] 17. The method of claim 16, further comprising rotating the substrate at an initial speed lower than the first speed prior to placing the liquid on the substrate and prior to rotating the substrate at a first speed. Applying a liquid to a microelectronic substrate.
    [26" claim-type="Currently amended] 17. The method of claim 16, further comprising cleaning the bottom surface of the substrate with a cleaning liquid.
    [27" claim-type="Currently amended] 27. The method of claim 26, further comprising controlling the temperature of the cleaning liquid to control the rate of heat transfer to or from the bottom surface of the substrate.
    [28" claim-type="Currently amended] 27. The method of claim 26, wherein distributing the liquid to a substantially uniform thickness comprises applying a liquid to the microelectronic substrate comprising forming a liquid layer having a thickness change within a range from about 10 microns to about 30 microns. Way.
    [29" claim-type="Currently amended] A method of applying a liquid to a microelectronic substrate having an upper surface and a lower surface opposite the upper surface,
    Selecting the microelectronic substrate to have a diameter greater than 8 inches;
    Supporting a bottom surface of the microelectronic substrate;
    Disposing a liquid having a viscosity in the range of about 5 cp to about 20 cp on the top surface of the microelectronic substrate,
    Rotating the microelectronic substrate at about 4,000 rpm to distribute the liquid on the surface of the microelectronic substrate to a substantially uniform thickness of about 5,000 kPa to about 10,000 kPa;
    Rotating the barrier spaced apart from the surface of the microelectronic substrate at a second speed substantially the same as the first speed such that the barrier and the top surface of the microelectronic substrate rotate at a substantially first speed. How to apply liquid to.
    [30" claim-type="Currently amended] 30. The microelectronic substrate of claim 29, wherein rotating the microelectronic substrate is performed without rotating the collection vessel located below the bottom surface of the microauthor substrate to collect liquid flowing from the microelectronic substrate. How to apply a liquid.
    [31" claim-type="Currently amended] 30. The method of claim 29, wherein rotating the micro substrate comprises spinning the microelectronic substrate at a speed between about 2,000 and about 4,000 rpm.
    [32" claim-type="Currently amended] 30. The method of claim 29, wherein disposing the liquid comprises directing a stream of liquid towards the substrate through an opening in the barrier.
    [33" claim-type="Currently amended] 30. The method of claim 29, wherein disposing a liquid on the microelectronic substrate comprises dispensing a photoresist material on the microelectronic substrate.
    [34" claim-type="Currently amended] 30. The method of claim 29, wherein distributing the liquid to a substantially uniform thickness comprises forming a liquid layer having a thickness variation within a range from about 10 microns to about 20 microns.
    [35" claim-type="Currently amended] An apparatus for disposing a fluid on a first surface of a microelectronic substrate having a second surface facing away from the first surface, the apparatus comprising:
    A support rotatable about an axis of rotation at a first speed, the support having a coupling for engaging the microelectronic substrate, the microelectronic substrate projecting thereon;
    A conduit having an opening positioned adjacent said support for disposing fluid on a first surface of said microelectronic substrate,
    A rotational barrier adjacent said support, capable of rotating at a second speed substantially the same as said first speed,
    The barrier is at least partially above the first surface of the baby microelectronic substrate, facing the first surface of the microelectronic substrate, the first of the gas rotating with the microelectronic substrate adjacent the surfaces of the microelectronic substrate; And place a portion away from the microelectronic substrate to separate from the second portion of the gas that is substantially static relative to the microelectronic substrate.
    [36" claim-type="Currently amended] 36. The apparatus of claim 35, wherein the support comprises a flange facing the second surface of the microelectronic substrate and extending radially outward from the axis of rotation,
    The barrier is spaced apart from the flange to form a gap between the flange and a barrier facing the second surface of the microelectronic substrate,
    Wherein the device further comprises a plurality of nozzles positioned adjacent the gap to direct the cleaning liquid towards the second surface of the microelectronic substrate.
    [37" claim-type="Currently amended] 36. The apparatus of claim 35, wherein the support comprises a flange extending radially outward from the axis of rotation toward the microelectronic substrate.
    The barrier is spaced apart from the flange to form a gap between the flange and the barrier facing the second surface of the microelectronic substrate,
    The apparatus includes a plurality of nozzles positioned adjacent the gap, the nozzle being coupled to the cleaning liquid source for guiding the cleaning liquid toward the second surface of the microelectronic substrate,
    A temperature controller coupled to the wash liquor source for controlling the temperature of the wash liquor;
    And further comprising a collection vessel located below the microelectronic substrate for collecting liquid ejected from the surfaces of the microelectronic substrate as the microelectronic substrate rotates,
    And the barrier and support are rotated relative to the collection vessel.
    [38" claim-type="Currently amended] 36. The apparatus of claim 35, wherein the barrier is coupled to the support to rotate with the support,
    At least a portion of the barrier is substantially parallel to the first surface of the microelectronic substrate and has an opening through which liquid passes.
    [39" claim-type="Currently amended] 36. The fluid placement device of claim 35, wherein the barrier is removably attached to the support and is movable relative to the support between an attachment position and a release position.
    [40" claim-type="Currently amended] 36. The fluid placement device of claim 35, wherein the support comprises a barrier support extending outwardly beyond the engagement portion to support the barrier.
    [41" claim-type="Currently amended] 36. The fluid placement device of claim 35, further comprising a collection vessel extending outwardly beyond the engagement portion to collect fluid falling from the substrate.
    [42" claim-type="Currently amended] 36. The barrier of claim 35 wherein said barrier comprises a first opening for evacuating gas between said substrate and said barrier when said substrate is joined by said support, and said barrier when said substrate is joined by a support. And a second opening for introducing gas between the substrates.
    [43" claim-type="Currently amended] 36. The fluid placement device of claim 35, wherein the barrier has a substantially circular cross-sectional shape when crossed by a plane substantially parallel to the microelectronic substrate.
    [44" claim-type="Currently amended] 36. The fluid placement device of claim 35, further comprising a microelectronic substrate having a substantially circular plate shape.
    [45" claim-type="Currently amended] 45. The fluid placement device of claim 44, wherein the microelectronic substrate has a diameter greater than about 8 inches.
    [46" claim-type="Currently amended] 45. The fluid placement device of claim 44, wherein the microelectronic substrate has a diameter of about 12 inches.
    [47" claim-type="Currently amended] 36. The fluid placement device of claim 35, wherein said support is rotatable to reach about 4,000 rpm.
    [48" claim-type="Currently amended] 36. The fluid placement device of claim 35, further comprising a cleaning liquid source in fluid communication with the second surface of the microelectronic substrate for cleaning the second surface.
    [49" claim-type="Currently amended] 49. The fluid placement device of claim 48, further comprising a temperature controller coupled to a cleaning liquid source for controlling the heat transfer rate from the micro substrate and the temperature of the cleaning fluid.
    [50" claim-type="Currently amended] 49. The fluid placement device of claim 48, further comprising a liquid having a viscosity within the range of 5 cps to 20 cps.
    [51" claim-type="Currently amended] 49. The fluid placement device of claim 48, further comprising a liquid comprising a photoresist material.
    [52" claim-type="Currently amended] An apparatus for placing fluid on a first surface of a microelectronic substrate having a second surface opposite the first surface, the apparatus comprising:
    A support rotatable about an axis of rotation, the support having a coupling for coupling to the microelectronic substrate, the coupling being configured to engage smaller than the entire second surface of the microelectronic substrate;
    A conduit having an opening positioned adjacent said support for disposing fluid on a surface of said microelectronic substrate;
    A fixed receiving container positioned adjacent said support for collecting fluid from a microelectronic substrate, with which said engagement of said support can rotate;
    A barrier coupled to the support, the barrier rotatable with a coupling to the container,
    The barrier is spaced apart from and adjacent to the microelectronic substrate, such that the first portion of the gas that rotates with the microelectronic substrate adjacent to the microelectronic substrate is spaced apart from the microelectronic substrate so that the microelectronic A fluid placement device that separates from a second portion of the gas that is substantially static relative to the substrate.
    [53" claim-type="Currently amended] 53. The fluid placement device of claim 52, wherein the containment vessel includes a base, a sidewall extending upwardly from the base, and an upward opening for collecting fluid from the microelectronic substrate.
    [54" claim-type="Currently amended] 53. The fluid placement device of claim 52, wherein the receiving container is located below the support.
    [55" claim-type="Currently amended] 53. The fluid placement device of claim 52, wherein the containment vessel comprises one or more ports for removing fluid collected within the containment vessel.
    [56" claim-type="Currently amended] 53. The fluid placement device of claim 52, wherein at least a portion of the barrier is substantially parallel to the surface of the substrate and has an opening through which liquid passes.
    [57" claim-type="Currently amended] 53. The apparatus of claim 52, wherein the support comprises a flange extending radially outward from the axis of rotation, wherein the barrier is spaced apart from the flange to form a gap between the flange and a barrier facing the second surface of the microelectronic substrate. It is
    Wherein the device further comprises a plurality of nozzles positioned adjacent the gap to direct the cleaning liquid towards the second surface of the microelectronic substrate.
    [58" claim-type="Currently amended] 53. The fluid placement device of claim 52, wherein the barrier is removably attached to the support and is movable relative to the support between an attachment position and a release position.
    [59" claim-type="Currently amended] 53. The fluid placement device of claim 52, further comprising a microelectronic substrate having a substantially circular plate shape.
    [60" claim-type="Currently amended] 60. The fluid placement device of claim 59, wherein the microelectronic substrate has a diameter greater than about 8 inches.
    [61" claim-type="Currently amended] 60. The fluid placement device of claim 59, wherein the microelectronic substrate has a diameter of about 12 inches.
    [62" claim-type="Currently amended] 53. The fluid placement device of claim 52, further comprising a liquid having a viscosity within a range of between 5 cp and 20 cp.
    [63" claim-type="Currently amended] 53. The fluid placement device of claim 52, further comprising a liquid comprising a photoresist material.
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    同族专利:
    公开号 | 公开日
    EP1216107A4|2009-10-21|
    US20030211232A1|2003-11-13|
    KR100752535B1|2007-08-29|
    US6872254B2|2005-03-29|
    US6261635B1|2001-07-17|
    US20010020443A1|2001-09-13|
    AU7084000A|2001-03-26|
    JP2003528708A|2003-09-30|
    US6576055B2|2003-06-10|
    EP1216107A1|2002-06-26|
    WO2001015818A1|2001-03-08|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1999-08-27|Priority to US09/384,830
    1999-08-27|Priority to US09/384,830
    2000-08-28|Application filed by 린치 마이클 엘., 마이크론 테크놀로지 인코포레이티드
    2002-06-01|Publication of KR20020041418A
    2007-08-29|Application granted
    2007-08-29|Publication of KR100752535B1
    优先权:
    申请号 | 申请日 | 专利标题
    US09/384,830|1999-08-27|
    US09/384,830|US6261635B1|1999-08-27|1999-08-27|Method for controlling air over a spinning microelectronic substrate|
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