• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to a thin film transistor liquid crystal display device manufacturing method, and more particularly, to a thin film transistor liquid crystal display device manufacturing method for preventing the residue of the ITO film, comprising the steps of: loading a glass substrate on which the ITO film is to be deposited into the chamber; Heating the glass substrate in a heating chamber; Cleaning the heated glass substrate using plasma; Depositing an ITO film on the cleaned glass substrate; And unloading the glass substrate on which the ITO film is deposited in the chamber. Therefore, by preventing the organic matter in the plasma, it is possible to prevent the residue of the local ITO film to improve the yield when producing high value-added panels, such as FFS or IPS mode, it is possible to reduce the investment cost to the dedicated process equipment, If the use of the buffer layer is required, the same equipment as the buffer layer can be cleaned at the same cost, thereby reducing the production cost.
    公开号:KR20020039467A
    申请号:KR1020000069293
    申请日:2000-11-21
    公开日:2002-05-27
    发明作者:조진희；이교웅；임승무
    申请人:주식회사 현대 디스플레이 테크놀로지；
    IPC主号:
    专利说明:

    Thin-film transistor liquid crystal display device manufacturing method {METHOD OF MANUFACTURING THIN FILM TRANSISTOR LCD}
    [9] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film transistor liquid crystal display device, and more particularly, to manufacturing a thin film transistor liquid crystal display device capable of preventing residue during deposition of indium tin oxide by preventing organic matter on a glass substrate by plasma. It's about how.
    [10] In general, thin film transistor liquid crystal display devices such as FFS (Fringe Field Switching) or IPS (In-Plane Switching) mode generally use two pixel electrodes to realize a wide viewing angle. Unlike ordinary thin film transistors, an ITO film is directly deposited on a glass substrate.
    [11] The biggest defect of the substrate which has been subjected to the ITO film deposition process is that the sorting of the gate and the common electrode occurs, because a residue remains on the glass substrate during the etching of the ITO film, thereby connecting the gate and the common electrode.
    [12] The reasons for the residue of ITO are as follows. First, the ITO film has a much higher adhesion to the glass substrate than the adhesion between the amorphous silicon layer, the gate, and the Al layer, which is deposited on the liquid crystal display device substrate, and the source and drain metal. Appears high. Second, there is a difference in the etching rate between the amorphous ITO film and the crystalline ITO film. The amorphous ITO film has a faster etching rate than the crystalline ITO film. This is not the same, resulting in ITO residue on the substrate. Thirdly, in the photo process for etching the ITO film, this material remains on the surface of the photoresist film, blocking the etching solution, and only a portion thereof is not etched, resulting in residue.
    [13] Related to the present invention relates to the first method, wherein ITO residues are generated on the surface due to the enhanced adhesion to the glass substrate. When organic matter remains on the glass substrate, In is released from the target when ITO sputtering for deposition of the ITO film. When the 2 0 3 and Sn0 2 agglomerates stick to the glass substrate, the high energy of the sputtered particles causes the ITO particles to entangle with the organics and deposit. In this process, oxides such as SiO 2 , CaO, and MgO, which are the main components of glass, form a strong bonding force with ITO particles to form an ITO film, and when etching, it takes more time than etching a pure ITO film. It cannot be etched, leaving a residue.
    [14] 1 and 2 show a conventional ITO film deposition process in which such ITO residues occur.
    [15] 1 is a flowchart illustrating a process of depositing a first (1st) ITO film on a glass substrate during a typical liquid crystal display device manufacturing process, and FIG. 2 is a detailed flowchart of a conventional ITO film deposition process.
    [16] As shown in FIG. 1, obtaining an insulated glass substrate to be a substrate (S101), cleaning the same with ultraviolet (Ultra Violet) or detergent (S103), and depositing an ITO film on the cleaned glass substrate. (S105) is made.
    [17] The process of depositing the ITO film is described in detail in FIG. In order to deposit an ITO film on the glass substrate, it is moved to a load rock chamber (S201) and a step of moving it to a heating chamber (S203), which is vacuumed so that impurities do not penetrate after loading. The process takes place in a state. The glass substrate is heated in the heating chamber S203 and then unloaded (S207) to move the glass substrate to the ITO film deposition process chamber (S205).
    [18] When the ITO film deposition process is performed as described above, many residues are left due to the organic material of the glass substrate, and in order to prevent such residues, a method of structurally completely disconnecting using 7 or 8 masks and proper etching during ITO film etching during the process There is an over etching method for etching more than necessary etching time.
    [19] However, the method of increasing the number of masks and structurally disconnecting the wires has a problem of causing an increase in manufacturing cost, and the method of preventing residue by performing over etching of 200% or more adds etching time. Attack does not occur, but the manufacturing time per panel of the etching equipment is increased, resulting in an increase in the manufacturing cost, and also in the case of over etching, a short occurs, and thus there is a limit in preventing residue.
    [20] The present invention has been made to solve the above problems, to solve the local residue of the ITO film by improving the process before the deposition of the ITO film, the high before the deposition process of the ITO film after the cleaning process of the glass substrate or the cleaning process of the glass substrate The purpose of the present invention is to provide a method for preventing organic matter using a plasma having a density and a method for manufacturing a thin film transistor liquid crystal display device for preventing ITO film residue using a plasma in a nitride atmosphere to prevent activation of an oxide on a glass substrate surface. have.
    [1] 1 is a flowchart illustrating a process up to deposition of a 1st ITO film on a glass substrate of a general thin film transistor liquid crystal display device;
    [2] 2 is a detailed flowchart of a conventional ITO film deposition process,
    [3] 3 is a detailed flowchart of an ITO film deposition process according to the present invention.
    [4] (Explanation of symbols for the main parts of the drawing)
    [5] s101: glass substrate obtained s103: initial cleaning
    [6] s105: ITO film deposition s301: Load
    [7] s303: heating s304: plasma cleaning
    [8] s305: ITO film deposition s307: unload
    [21] In order to achieve the object of the present invention, the present invention provides a thin film transistor liquid crystal display device manufacturing method for preventing the residue of the ITO film, comprising the steps of: loading a glass substrate on which the ITO film is to be deposited into the chamber; Heating the glass substrate in a heating chamber; Cleaning the heated glass substrate using plasma; Depositing an ITO film on the cleaned glass substrate; Unloading the glass substrate on which the ITO film is deposited into a chamber; A method of depositing an ITO film during a thin film transistor liquid crystal display device array substrate manufacturing process, comprising: loading a glass substrate on which an ITO film is to be deposited into a chamber; Cleaning the glass substrate using plasma; Heating the glass substrate in a heating chamber; Depositing an ITO film on the heated glass substrate; Unloading the glass substrate on which the ITO film is deposited into a chamber; The glass substrate is heated to a temperature of 20 ~ 400 ℃, for generating gas in the plasma has a pressure of Ar, N 2, Xe, He, Ne, and for use, the occurrence of the plasma gas is 10 -4 to 10 - 2 Torr, the plasma wavelength is 150-350 nm, the plasma cleaning time is 0.1-120 s, a buffer layer is deposited on the glass substrate, cleaned with plasma, an ITO film is deposited, and the buffer layer The material used may be SiNx, and the buffer layer and the plasma ultraviolet light cleaning may be performed in the same chamber, and may be applied to the second ITO film deposition process of the ITO film deposition process.
    [22] The present invention can prevent the organic matter on the glass by plasma, thereby preventing the residue of the local ITO film to improve the yield in the production of high value-added panels, such as FFS or IPS mode, and also proceed without the reinforcement of the initial cleaning equipment Therefore, the production cost of the 5 mask panel is not increased, and the atmosphere of the glass surface can be equally controlled during the deposition of the first (1st) ITO film, so that an ITO film having uniform characteristics can be deposited. .
    [23] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
    [24] 3 is a detailed flowchart of the ITO film deposition process according to the present invention, as shown in the cleaning step of the glass substrate is the same, sputtering (sputtering) through the load rock chamber (S301) in the ITO film deposition process step After heating the glass substrate into the chamber at a temperature of 20 to 400 ° C. in the heating chamber S303, the organic material is cleaned in a plasma chamber with a plasma of 150 to 350 nm for 0.1 to 120 s before moving to the deposition process chamber (S304). Step).
    [25] (S305 and S307 not specified above are ITO film deposition and unloading in Fig. 2).
    [26] Even if the organic substrate is prevented by using plasma before the glass substrate is put into the load lock, since contamination by organic matter may occur during the transfer process, the organic material is frequently vacuumed and the deposition process is performed after vacuum cleaning. do. It is intended to solve the ITO film residue by removing the organic material of the glass substrate by the plasma and changing the surface of the glass substrate from an oxidizing atmosphere to a nitride atmosphere.
    [27] The basic principle of the cleaning process by the plasma is the same method as cleaning the organic material by ultraviolet light, the ultraviolet light emitted from the discharge of the inert gas remains on the glass substrate, and takes the method of burning off the remaining organic material. In addition, since the ultraviolet rays emitted according to the gas used at the time of discharge is different, the gas for plasma generation may be appropriately selected from Ar, N 2 , Xe, He, Ne, etc. under a pressure of 10 -4 to 10 -2 Torr. . In particular, when nitrogen gas is used, the surface of the glass substrate is nitrided to prevent not only organic matter removal but also reaction between the glass and the ITO film.
    [28] Another embodiment of the present invention can be applied not only to deposit an ITO film on a glass substrate, but also before depositing a second (2nd) ITO film and to clean the plasma when a buffer layer (SiNx) is used between the glass substrate and the 1st ITO film. The additional production cost can be reduced by depositing a buffer layer (SiNx) in the chamber.
    [29] Therefore, by removing the organic material on the glass substrate by the plasma in the ITO film deposition process step, it is possible to reduce the time when the ITO film is etched, to prevent the local ITO film residue to improve the yield in high value-added panel production.
    [30] As described above, according to the present invention, by removing the organic material on the glass substrate with plasma, it is possible to prevent the residue of the local ITO film to improve the yield in the production of high value-added panel, and to use the equipment currently in use, If the use of the buffer layer can be reduced, the same equipment as the buffer layer can be washed at the same cost, thereby reducing the production cost.
    [31] In addition, by increasing the cost of production without reinforcing the initial cleaning equipment, the production cost is not increased. When the first (1st) ITO film is deposited, the atmosphere of the entire glass substrate can be controlled in the same manner, so that an ITO film having uniform characteristics can be deposited. It has an effect.
    [32] The present invention is not limited to the above-described embodiments, and various changes can be made by those skilled in the art without departing from the gist of the present invention as claimed in the following claims.
    权利要求:
    Claims (10)
    [1" claim-type="Currently amended] In the thin film transistor liquid crystal display device manufacturing method for preventing the residue of the ITO film,
    Loading the glass substrate into which the ITO film is to be deposited into the chamber;
    Heating the glass substrate in a heating chamber;
    Cleaning the heated glass substrate using plasma;
    Depositing an ITO film on the cleaned glass substrate;
    And unloading the glass substrate on which the ITO film is deposited in a chamber.
    [2" claim-type="Currently amended] In the thin film transistor liquid crystal display device manufacturing method for preventing the residue of the ITO film,
    Loading the glass substrate into which the ITO film is to be deposited into the chamber;
    Cleaning the glass substrate using plasma;
    Heating the glass substrate in a heating chamber;
    Depositing an ITO film on the heated glass substrate;
    And unloading the glass substrate on which the ITO film is deposited in a chamber.
    [3" claim-type="Currently amended] The method according to claim 1 or 2,
    The glass substrate is heated to a temperature of 20 ~ 400 ℃ a thin film transistor liquid crystal display device manufacturing method.
    [4" claim-type="Currently amended] The method according to claim 1 or 2,
    The plasma generating gas is Ar, N 2 , Xe, He, Ne using a thin film transistor liquid crystal display device characterized in that.
    [5" claim-type="Currently amended] The method of claim 4, wherein
    The pressure of the plasma generating gas is 10 -4 ~ 10 -2 Torr, characterized in that the thin film transistor liquid crystal display device manufacturing method.
    [6" claim-type="Currently amended] The method of claim 4, wherein
    The wavelength of the plasma is 150 ~ 350nm characterized in that the thin film transistor liquid crystal display device manufacturing method.
    [7" claim-type="Currently amended] The method according to claim 1 or 2,
    The plasma cleaning time is 0.1 ~ 120s, characterized in that the thin film transistor liquid crystal display device manufacturing method.
    [8" claim-type="Currently amended] The method according to claim 1 or 2,
    A method of manufacturing a thin film transistor liquid crystal display device comprising depositing a buffer layer on the glass substrate, cleaning with plasma, and then depositing an ITO film.
    [9" claim-type="Currently amended] The method of claim 8,
    A method of manufacturing a thin film transistor liquid crystal display device using SiNx as the material used as the buffer layer.
    [10" claim-type="Currently amended] The method of claim 8,
    And the buffer layer and the plasma ultraviolet light cleaning may be performed in the same chamber.
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    同族专利:
    公开号 | 公开日
    KR100675927B1|2007-02-01|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2000-11-21|Application filed by 주식회사 현대 디스플레이 테크놀로지
    2000-11-21|Priority to KR20000069293A
    2002-05-27|Publication of KR20020039467A
    2007-02-01|Application granted
    2007-02-01|Publication of KR100675927B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR20000069293A|KR100675927B1|2000-11-21|2000-11-21|Method of manufacturing thin film transistor lcd|
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