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    • 专利摘要:
    PURPOSE: An apparatus for coating HMDS is provided to prevent the creation of the particles by preventing the water and the fume from remaining in a vapor filter. CONSTITUTION: An apparatus for coating HMDS comprises a source tank(41)having a HMDS solution(42) therein. A bubbling line(43) for injecting a first nitrogen gas is connected to the source tank(41) so as to allow the HMDS solution(42) to be vaporized. A nitrogen line(45) for injecting a second nitrogen gas is connected to the source tank(41) so as to dilute the vaporized HMDS solution. A vapor line(51) is connected to the source tank(41) so as to inject the HMDS vapor into a semiconductor wafer. A vapor filter(44) is installed in the vapor line(51) so as to filter the diluted HMDS vapor.
    公开号:KR20000059960A
    申请号:KR1019990007913
    申请日:1999-03-10
    公开日:2000-10-16
    发明作者:김용수
    申请人:윤종용；삼성전자 주식회사；
    IPC主号:
    专利说明:

    Etching coating device {Apparatus for coating HMDS}
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to an EDM coating apparatus (hereinafter referred to as "HMDS").
    In general, in order to manufacture a semiconductor device on a semiconductor wafer such as a silicon wafer, various semiconductor manufacturing processes such as a film forming process, an ion implantation process, and a photolithography process are required. In particular, in the photolithography process, HMDS is applied to improve adhesion between the material film and the photoresist applied later on the semiconductor wafer on which the material film is formed. Subsequently, after the photoresist is applied onto the HMDS-coated semiconductor wafer, a material layer pattern is formed in a desired form through exposure and development. Here, the conventional HMDS coating apparatus which coats the said HMDS is demonstrated.
    1 is a schematic view for explaining the HMDS coating apparatus according to the prior art.
    Specifically, the conventional HMDS coating apparatus has a source tank (1) containing the HMDS solution (2), the bubbling line (3) and nitrogen line (5) is connected to the source tank (1). The bubbling line 3 is provided with a flow meter 7 for adjusting the flow rate of nitrogen gas, and a bubbling filter 9 for filtering impurities of the nitrogen gas at the rear end of the flow meter 7. Nitrogen passing sequentially through the flow meter 7 and the bubbling filter 9 along the bubbling line 3 is injected into the source tank 1 to bubble the HMDS solution 2 to vaporize it. Let's do it. The nitrogen line 5 is provided with a flow meter 11 for adjusting the flow rate of nitrogen gas, and a dilution filter 13 at the rear end of the flow meter 11, and a source tank through the nitrogen line 5. Nitrogen gas is injected into (1).
    In addition, the HMDS vapor 4 gasified in the source tank 1 is diluted with nitrogen gas injected by the nitrogen line 5, and the diluted HMDS vapor 4 is chambered through the steam line 15. To a semiconductor wafer (not shown) on the plate 19 in 17.
    A first solenoid valve 21 and a flow meter 23 are connected to the steam line 15, and a steam filter 25 and a second solenoid ball 27 are connected to a rear end of the flow meter 23. have. The first solenoid valve 21 and the second solenoid valve 27 control the on and off of diluted HMDS vapor. An overflow tank 29 for storing the overflowed HMDS vapor is connected to the first solenoid valve 21. The flow meter 23 regulates the amount of dilute HMDS vapor 4. The steam filter 25 serves to filter impurities and the like of the HMDS vapor 4. That is, the air filter connected to the air line 33 after the diluted HMDS vapor 4 passes through the first solenoid belt 21, the flow meter 23, the steam filter 25 and the second solenoid valve 27. It is diluted with air through 31 and applied onto a semiconductor wafer (not shown) located on the plate 19 of the chamber 17. In FIG. 1, the air filter 31 is a filter used semi-permanently.
    By the way, in the conventional HMDS coating apparatus, the filters 9, 13, and 25 are provided in the nitrogen line 5, the bubbling line 3, and the steam line 15, respectively, and there is a high possibility that any one of them may have a pressure change. There is a problem that a lot of equipment efficiency and failure occurs. Further, in the conventional HMDS coating apparatus, when the defects of the filters 9, 13, and 25 occur, a pattern formed on the semiconductor wafer is defective, for example, a defect such as photoresist lifting.
    In addition, in the conventional HMDS coating apparatus, even if the HMDS vapor 4 is filtered by the steam filter 25, there is a problem in that particles are generated in the semiconductor wafer when water is contained in the HMDS.
    Accordingly, the technical problem to be achieved by the present invention is to provide an HMDS coating apparatus capable of suppressing pattern defects and particle generation.
    1 is a schematic view for explaining the HMDS coating apparatus according to the prior art.
    Figure 2 is a schematic diagram for explaining the HMDS coating apparatus according to the present invention.
    In order to achieve the above technical problem, the present invention provides a source tank containing an HMDS solution, a bubbling line connected to the source tank to inject nitrogen gas capable of vaporizing the HMDS solution, and the source tank A nitrogen line connected to the nitrogen line for injecting nitrogen to dilute the vaporized HMDS, a steam line connected to the source tank and capable of injecting the diluted HMDS vapor onto a semiconductor wafer in a chamber; It provides a HMDS coating apparatus comprising a steam filter installed to filter the diluted HMDS vapor in the steam line at the top of the chamber. A flow meter may be connected to the bubbling line and the nitrogen line. An air line may be connected to the steam line.
    Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
    Figure 2 is a schematic diagram for explaining the HMDS coating apparatus according to the present invention.
    Specifically, in the HMDS coating apparatus of the present invention, a source tank 41 containing an HMDS solution 42 and a bubbling line 43 and a nitrogen line 45 are connected to the source tank 41. The bubbling line 43 is provided with a flow meter 47 for adjusting the flow rate of nitrogen gas. Nitrogen gas passing through the flow meter 47 along the bubbling line 43 is injected into the source tank 41 to bubble and vaporize the HMDS solution 42. The nitrogen line 45 is provided with a flow meter 49 for adjusting the flow rate of nitrogen gas, and nitrogen gas is injected into the source tank 41 through the nitrogen line 45. In particular, since the filter is not installed in the nitrogen line 45 and the bubbling line 43 in the HMDS coating apparatus of the present invention, it is possible to prevent the problems that may occur in the filter to increase the facility efficiency.
    In addition, the HMDS vapor 44 gasified in the source tank 41 is diluted with nitrogen gas injected by the nitrogen line 45, and the diluted HMDS vapor 44 is semiconductor through the vapor line 51. Is applied to the wafer. A first solenoid valve 53 and a flow meter 55 are connected to the steam line 51, and a second solenoid valve 57 and a steam filter 59 are connected to a rear end of the flow meter 55. have. The first solenoid valve 53 and the second solenoid valve 57 regulate the on and off of the diluted HMDS vapor 44, and the flow meter 55 controls the amount of the diluted HMDS vapor 44. The vapor filter 57 serves to filter impurities and the like of the HMDS vapor 44. The diluted HMDS vapor 44 passes through the first solenoid valve 53, the flow meter 55, the second solenoid valve 57 and the steam filter 59 and then the air filter 63 of the air line 61. Is diluted with air through and applied onto a semiconductor wafer (not shown) located on plate 67 in chamber 65. In FIG. 2, the air filter 63 is a filter used semi-permanently.
    In particular, in the HMDS application apparatus of the present invention, the steam filter 59 is installed on the top of the chamber 65. In this case, even if water or fume is generated in the HMDS vapor 44 by the steam filter 59, the HMDS vapor 44 is applied at about 120 ° C., so that the water in the steam filter is removed by high heat. That is, the HMDS application apparatus of the present invention installs the vapor filter 59 on the top of the chamber to apply the HMDS vapor 44 on the semiconductor wafer in a state where there is essentially no moisture or fume accumulated in the vapor filter 59.
    As mentioned above, although this invention was demonstrated concretely through the Example, this invention is not limited to this, A deformation | transformation and improvement are possible with the conventional knowledge in the art within the technical idea of this invention.
    As described above, in the HMDS coating apparatus of the present invention, the filter is not installed in the nitrogen line and the bubbling line, thereby improving the facility efficiency due to the filter. In addition, in the HMDS coating apparatus of the present invention, by placing the steam filter at the upper end of the chamber, it is possible to prevent the generation of moisture or fume in the steam filter, thereby suppressing particle generation in the semiconductor wafer.
    权利要求:
    Claims (3)
    [1" claim-type="Currently amended] Source tank containing HMDS solution;
    A bubbling line connected to the source tank to inject nitrogen gas capable of vaporizing the HMDS solution;
    A nitrogen line connected to the source tank for injecting nitrogen to dilute the vaporized HMDS;
    A vapor line connected to the source tank and capable of injecting the diluted HMDS vapor onto a semiconductor wafer in a chamber; And
    And a steam filter installed in the steam line at the top of the chamber to filter the diluted HMDS vapor.
    [2" claim-type="Currently amended] The HMDS coating apparatus according to claim 1, wherein a flow meter is connected to the bubbling line and the nitrogen line.
    [3" claim-type="Currently amended] The HMDS coating apparatus according to claim 1, wherein an air line is connected to the steam line.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1999-03-10|Application filed by 윤종용, 삼성전자 주식회사
    1999-03-10|Priority to KR1019990007913A
    2000-10-16|Publication of KR20000059960A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019990007913A|KR20000059960A|1999-03-10|1999-03-10|Apparatus for coating hmds|
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