• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: An apparatus for measuring the size and the overlay of a pattern of a semiconductor wafer is provided to reduce the measuring time by continuously measuring the size and the overlay of the pattern of the semiconductor wafer. CONSTITUTION: An apparatus for measuring the size and the overlay of a pattern of a semiconductor wafer has a measuring chamber(100). A partition(30) is slidably installed in the measuring chamber(100) so as to divide the measuring chamber(100) into a size measuring chamber(10) and an overlay measuring chamber(20). A common stage(40) is installed at a lower portion of the size measuring chamber(10) and the overlay measuring chamber(20). The size measuring chamber(10) includes a size measuring stage(12), a wafer stage(14) on which a wafer(1) is loaded, and an electronic beam source(18). The overlay measuring chamber(20) includes an over-layer measuring stage(22) and a halogen lamp(26).
    公开号:KR20000059932A
    申请号:KR1019990007870
    申请日:1999-03-10
    公开日:2000-10-16
    发明作者:이병철
    申请人:황인길；아남반도체 주식회사；
    IPC主号:
    专利说明:

    A device for continuously measuring the pattern size and overlay of a semiconductor wafer {APPARATUS FOR MEASURING A PATTERN SIZE AND AN OVERLAY ON A WAFER CONTINUOUSLY}
    The present invention relates to semiconductor wafer fabrication, and more particularly, to an apparatus capable of continuously measuring the size and overlay of a multilayer pattern formed on a semiconductor wafer.
    As is well known, semiconductor wafer processing is performed by forming various kinds of films on the surface of each semiconductor wafer in a lot unit, and repeatedly scraping off a specific portion of the semiconductor wafer using a pattern mask. It refers to the whole process of constructing an electronic circuit having the same pattern on each chip.
    In the above-described semiconductor wafer processing, a photomasking process that generates ultraviolet rays from a stepper and transfers the circuit pattern drawn on the pattern mask to the surface of the semiconductor wafer is used to accurately align the semiconductor wafer deposited on the wafer stage. Accurate exposure dose or exposure time adjustment is required for aligned wafers. Therefore, after completion of the photomasking process, a measurement process is performed to confirm whether the process is performed correctly. In this case, the necessary measurement item in the measurement process is to first check whether the alignment between the pattern formed by the photomasking process performed previously and the pattern formed by the photomasking process performed correctly is performed. It is to check whether the size of the pattern transferred on the semiconductor wafer is formed to a desired size. Typically, the measurement of the pattern size and the overlay measurement are performed using a critical dimension scanning electronic beam microscope (CD SEM) and an overlay measuring device for measuring the exposure width formed on the semiconductor wafer.
    The electron scanning beam microscope first performs wafer alignment, which places the semiconductor wafer for measurement at the correct measurement position, and then emits an electron beam onto the aligned wafer, which is reflected from the wafer. By detecting the difference electron beam, the shape of the pattern on the semiconductor wafer is obtained and the size of the pattern is measured therefrom. The overlay measuring device is formed on a semiconductor wafer by performing the same wafer alignment as that performed in an electron scanning beam microscope, then emitting a visual beam onto the aligned wafer and detecting the reflected light beam reflected from the wafer. Measure the deviation of the previous pattern from the current pattern.
    The measurement of the pattern size and the overlay measurement on the typical semiconductor wafer described above are performed separately by the electron scanning beam microscope and the overlay measuring device, respectively. In the measurement procedure, the measurement of the pattern size by the electron scanning beam microscope is completed and then the wafer It is proceeding to measure the overlay by moving back to the overlay device.
    Therefore, due to such a double operation, a problem that takes a relatively long time for the semiconductor processing process has emerged. Therefore, in order to improve this, it is desirable to shorten the semiconductor processing time by continuously measuring the size and overlay of the pattern on the semiconductor wafer.
    Therefore, an object of the present invention is to provide a pattern size and overlay measuring apparatus capable of continuously executing pattern size and overlay measurement of a multilayer pattern formed on a semiconductor wafer.
    In order to achieve the above object, the apparatus according to the present invention is to measure the size of the pattern on the wafer and the overlay for continuous measurement of the measurement chamber, to divide the measurement chamber into the pattern size measurement chamber and the overlay measurement chamber so as to be slidably transportable in the center The installed partition, the pattern size measuring chamber and the common stage continuously installed on the lower surface of the overlay measuring chamber, the pattern size measuring chamber is a pattern size measuring stage, the stage where the common stage and the pattern size measuring stage intersect the common stage and the cross A wafer stage for mounting the wafer thereon and an electron beam source aligned with the wafer stage, wherein the overlay measuring chamber is overlaid with the common stage and the overlay measuring stage installed so as to be orthogonal to each other. It characterized in that it comprises a halogen lamp installed to be aligned in a line with the point where the ray measuring stage intersects.
    1 is a block diagram of an apparatus for measuring the pattern size and overlay of a semiconductor wafer according to the present invention.
    <Description of the code | symbol about the principal part of drawing>
    1: wafer 10: pattern size measuring room
    12: stage for measuring the pattern size 14: wafer stage
    16: electron beam control device 18: electron beam source
    20: overlay measuring room 22: overlay measuring stage
    24: halogen light control device 26: halogen lamp
    30: partition 32, 34: light emitting element
    33, 35: light receiving element 40: common stage
    100: measuring room
    Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
    1 is a block diagram of an apparatus capable of continuously measuring an overlay and a pattern size formed on a semiconductor wafer according to the present invention.
    As shown, the apparatus capable of continuously measuring the pattern size and the overlay on the semiconductor wafer according to the present invention is the measuring room 100, the measurement room 100 for measuring the pattern size and overlay and the pattern size measuring room 10 The partition 30 for partitioning into the overlay measurement chamber 20 and the pattern size measurement chamber 10 and the overlay measurement chamber 20 so as to pass through the lower center of the partition 30 and the partition 30 which is slidably transported in the center of the measurement chamber 100. It includes a common stage 40 continuously installed on the lower surface.
    The pattern size measuring chamber 10 is provided at a point where the pattern size measuring stage 12 and the common stage 40 and the pattern size measuring stage 12 intersect each other with the common stage 40 on the bottom surface thereof. And a wafer stage 14 for mounting the wafer 1 thereon and an electron beam control device 16 provided on the upper surface of the pattern size measuring chamber 10 so as to be aligned with the wafer stage 14 in a straight line. An electron beam circle 18 is provided in the electron beam control device 16.
    The overlay measuring room 20 is arranged so that the overlay measuring stage 22 and the common stage 40 and the overlay measuring stage 22 are arranged in a line with each other at right angles to the common stage 40 of the lower surface thereof. And a halogen light control device 24 installed on the upper surface of the overlay measurement chamber 20. Inside the halogen light control device 24, a halogen lamp 26 as a light source is provided.
    The apparatus according to the present invention is a sensor for detecting the movement of the wafer 1 arranged in the pattern size measuring chamber 10 and the overlay measuring chamber 20 centering on the partition 30 described above, for example, a light emitting element 32. And 34) and light receiving elements 33 and 35 respectively corresponding thereto.
    Looking at the pattern size and the overlay measurement process according to the present invention by the above-described configuration is as follows.
    First, when the wafer 1 to be measured is loaded into the pattern size measuring chamber 10 through the common stage 40, the electron beam source 18 in the electron beam control device 16 is turned on. Subsequently, the wafer 1 is seated at a desired position on the wafer stage 14 while moving on the stage 12 for pattern size measurement, and then the beam from the electron beam source 18 is irradiated to measure the pattern size. do.
    When the pattern size measurement is completed, the wafer 1 is directed to the partition 30 through the common stage 40. At this time, when the wafer 1 is sensed by the sensing action of the light emitting element 32 and the light receiving element 33 provided in the pattern size measuring room 10 and the detection signal is output, the partition 30 is slid upward and moved upwards. The circle 18 is turned off.
    Next, the wafer 1 is moved to the overlay measurement chamber 20 through the space below the partition 30 which is slid upward. The wafer 1 moved to the overlay measurement chamber 20 is detected by the light emitting element 34 and the light receiving element 35 installed in the overlay measurement chamber 20 and the movement of the wafer 1 to the overlay measurement chamber 20. When the output is performed, the partition 30 slides downward to cut off between the measurement chambers 100 and at the same time, the halogen lamp 26 of the halogen light control device 24 is turned on.
    Subsequently, the wafer 1 is moved through the common stage 40 to the overlay measuring stage 22 and moved along the overlay measuring stage 22 to be positioned at a desired position, and then overlay measurement is performed. Thereafter, the wafer 1 having finished the pattern size and the overlay measurement is moved from the measurement chamber 100 to the predetermined position through the common stage 40, and the halogen lamp 26 is turned off.
    As described above, the present invention has been described and illustrated with reference to preferred examples, but it will be understood by those skilled in the art that various modifications can be made without departing from the spirit and scope of the present invention.
    Therefore, since the size and the overlay of the pattern formed on the semiconductor wafer can be continuously measured by the apparatus according to the present invention, the pattern size measurement and the overlay measurement time made in each conventional equipment are shortened, and the two measurement processes By being continuously performed in the equipment, there is an effect that can make the equipment more efficient.
    权利要求:
    Claims (7)
    [1" claim-type="Currently amended] An apparatus for measuring the size and overlay of a multilayer pattern formed on a semiconductor wafer,
    Measuring room for continuously measuring the pattern size and overlay on the wafer,
    Partition for partitioning the measuring room into the pattern size measuring room and the overlay measuring room, the partition installed in the center of the measuring room so as to be slidable,
    It includes a common stage continuously installed on the lower surface of the pattern size measuring room and the overlay measuring room,
    The pattern size measuring chamber may include a pattern size measuring stage installed to be orthogonal to the common stage, a wafer stage for mounting a wafer thereon, and a wafer stage mounted at a point where the common stage and the pattern size measuring stage intersect. Having electron beam sources aligned in a straight line,
    The overlay measuring chamber may include an overlay measuring stage installed to be orthogonal to the common stage, and a halogen lamp installed to be aligned with the intersection point of the common stage and the overlay measuring stage. Size and overlay measuring device.
    [2" claim-type="Currently amended] The semiconductor wafer pattern size and overlay measuring apparatus of claim 1, further comprising a sensor for detecting a wafer moving from the pattern size measuring chamber to the overlay measuring chamber.
    [3" claim-type="Currently amended] 3. The apparatus of claim 2, wherein the sensor comprises a light emitting element and a light receiving element.
    [4" claim-type="Currently amended] The semiconductor wafer pattern size and overlay measuring apparatus of claim 2, wherein the partition is slidably transferred in an up and down direction by a detection signal that the sensor detects and outputs a wafer movement.
    [5" claim-type="Currently amended] The method of claim 1, further comprising a light emitting element and a light receiving element installed in the pattern size measuring chamber and another light emitting element and a light receiving element installed in the overlay measuring chamber to detect the movement of the wafer from the pattern size measuring chamber to the overlay measuring chamber. A device for measuring the size and overlay of a semiconductor wafer pattern.
    [6" claim-type="Currently amended] 6. The method of claim 5, wherein the partition is slid upward and the electron beam source is turned off by a detection signal that is detected and output by a wafer by a sensing action of a light emitting element and a light receiving element of the pattern size measuring chamber. An apparatus for measuring the size and overlay of semiconductor wafer patterns.
    [7" claim-type="Currently amended] The method of claim 6, wherein the partition is slid downward to block the measurement chamber by the sensing action of the light emitting element and the light receiving element of the overlay measurement chamber, and the size of the pattern, characterized in that the halogen lamp is turned on Overlay measuring device.
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    同族专利:
    公开号 | 公开日
    KR100289999B1|2001-05-15|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1999-03-10|Application filed by 황인길, 아남반도체 주식회사
    1999-03-10|Priority to KR1019990007870A
    2000-10-16|Publication of KR20000059932A
    2001-05-15|Application granted
    2001-05-15|Publication of KR100289999B1
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019990007870A|KR100289999B1|1999-03-10|1999-03-10|Apparatus for measuring a pattern size and an overlay on a wafer continuously|
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