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    • 专利摘要:
    PURPOSE: A method for manufacturing a field effect transistor(FET) for preventing a lateral diffusion of a source/drain region is provided to control a short channel effect and a punch-through effect by having a vertically buried oxide layer for preventing an impurity in a source/drain region from diffusing laterally. CONSTITUTION: A method for manufacturing a field effect transistor(FET) for preventing a lateral diffusion of a source/drain region comprises the steps of: forming a gate pattern sequentially including a gate electrode, a capping layer, and a sacrificial polysilicon layer on a semiconductor substrate in which an isolation process is carried out; forming a first gate spacer on a sidewall of the gate pattern; performing an over-etching regarding the resultant structure to etch a part of the semiconductor substrate except the region of the sacrificial polysilicon layer of the gate pattern and the gate pattern; depositing an insulation layer for forming a vertically buried oxide layer on the entire surface of the over-etched resultant structure; anisotropic-etching the vertically buried oxide layer so that the vertically buried oxide layer can be remained only on a bottom sidewall of the etched semiconductor substrate; performing a selective epitaxial growth in a portion not covered by the bottom of the etched semiconductor substrate and the vertically buried oxide layer, and forming an epitaxial layer having a shape protruded to the gate pattern; and eliminating the capping layer of the gate pattern to form a silicide layer on the gate electrode and the source/drain region.
    公开号:KR20000056248A
    申请号:KR1019990005386
    申请日:1999-02-18
    公开日:2000-09-15
    发明作者:송원상；박정우；이길광；최태희
    申请人:윤종용；삼성전자 주식회사；
    IPC主号:
    专利说明:

    Field effect transistor to prevent horizontal diffusion of source / drain regions and manufacturing method thereof FET structure with reduced short channel effect and punchthrough
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a field effect transistor (FET) and a method of manufacturing the same.
    As the size and design rules of semiconductor devices are gradually reduced, the scale-down of metal oxide semiconductor FETs (MOSFETs), which is an important element constituting semiconductor devices, is also accelerating. However, reducing the size of the MOSFET reduces the gate effect channel length, causing punch through and short channel effects (SCE) between the source and drain. In order to improve such punch-through and short channel effects, research on semiconductor devices using selective epitaxial growth (hereinafter, referred to as “SEG”) is being conducted. At this time, when forming an epitaxial layer of an elevated source / drain using SEG, due to the edge facet of the epitaxial layer, the semiconductor device is subjected to an ion implantation and heat treatment process for subsequent source / drain formation. There is a problem of deterioration of the characteristics.
    1 is a cross-sectional view showing the problem of the FET manufacturing process in the prior art.
    Referring to FIG. 1, a gate pattern including a gate insulating film 55, a gate electrode 57, and a gate spacer 61 is formed on a semiconductor substrate 51 including a field oxide film 53 by an isolation process. The epitaxial layer 59 made of SEG is formed on the semiconductor substrate 51 on the side of the gate pattern.
    The above-described problem of the FET according to the related art is to perform an annealing process for activating the implanted impurities after the implantation of the gate pattern into the ion implantation mask due to the edge-cut face of the epi layer (A in the figure). Proceeding, non-uniform impurity regions B having locally deep junctions are formed in the source / drain regions 63, thereby deteriorating the electrical characteristics of the semiconductor device.
    In order to prevent the adverse effects of the epitaxial facet of the epitaxial layer, an epitaxial layer is grown by SEG and then covered with a gate spacer to cover the epitaxial facet of the epitaxial layer. However, this method does not put a limit on the extent region in which the source / drain regions expand during operation of the semiconductor device, so the punch through problem still remains. In addition, there is a method of adopting a silicon on insulator (SOI) structure, but it is not only less efficient in terms of manufacturing cost and manufacturing time, but also a problem of floating body effect. There is. In addition, a buried oxide layer can be partially inserted to produce pseudo SOI effects without the effect of floating body effects. Most of the existing buried oxide structures have a horizontal film structure under the source / drain regions. As a result, parasitic capacitance and junction leakage current between the source and drain are only reduced. Therefore, the impurity of the source / drain regions does not prevent lateral diffusion, and thus the problem of short channel effect cannot be solved, and punch-through phenomenon still remains.
    The technical problem to be achieved by the present invention is to provide a vertically buried oxide layer that can prevent impurities in the source / drain regions from being horizontally diffused to suppress short channel effects and punch through. To provide a method of manufacturing a FET that can be.
    Another object of the present invention is to provide a field effect transistor by the FET manufacturing method.
    1 is a cross-sectional view illustrating a problem of a field effect transistor (FET) manufacturing process in the prior art.
    2 to 7 are cross-sectional views illustrating a method of manufacturing a field effect transistor to prevent horizontal diffusion of source / drain regions according to an embodiment of the present invention.
    Explanation of symbols on the main parts of the drawings
    100: semiconductor substrate, 102: field oxide film,
    104: gate insulating film, 106: gate electrode,
    108: capping layer, 110: sacrificial polysilicon layer,
    112: gate spacer, 114 buried oxide layer,
    116: epi layer, 118: silicide layer,
    120: source / drain region, 124: source / drain depletion region,
    In order to achieve the above technical problem, the present invention provides a first process of forming a gate pattern in which a gate electrode, a capping layer, and a sacrificial polysilicon layer are sequentially formed on a semiconductor substrate in which device isolation is performed, and a first process on a sidewall of the gate pattern A second process of forming a gate spacer, a third process of etching a portion of the semiconductor substrate in the region excluding the sacrificial polysilicon layer of the gate pattern and the gate pattern by performing a transient etching on the resultant, and the entire surface of the resultant of the transient etching A fourth process of depositing an insulating film for forming a vertically buried oxide layer in the second process, and a fifth process of performing anisotropic etching on the vertical investment oxide layer so that the vertical investment oxide layer remains only on a lower sidewall of the etched semiconductor substrate. And at a portion not covered by the bottom of the etched semiconductor substrate and the vertical buried oxide layer. Performing a selective epitaxial growth (SEG) to form an epitaxial layer having a protruding shape on the gate pattern; removing the capping layer of the gate pattern; and forming a silicide layer on the gate electrode and the source / drain regions. A field effect transistor manufacturing method for preventing horizontal diffusion of a source / drain region, comprising a seventh step of forming, and a field effect transistor thereby.
    According to a preferred embodiment of the present invention, the capping layer is suitably formed using an oxide film, and after the sixth step, further proceeding to form a source / drain having a deep junction. Suitable.
    According to the present invention, a vertical buried oxide layer is formed in the channel portion to prevent horizontal diffusion of impurities in the source / drain regions, thereby reducing the change in threshold voltage due to the short channel effect, and reducing the horizontal level of the source / drain regions. By limiting direction expansion, latch-up and punch through phenomena can be significantly reduced. At the same time, it is possible to further increase the formation height of the epi layer with respect to the edge facet of the epi layer, thereby preventing a problem in that a junction is formed at a non-uniform depth in the source / drain region.
    Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
    The present invention can be implemented in other ways without departing from its spirit and essential features. For example, in the above preferred embodiment, the device isolation film is formed in the trench method, but it may be configured in the LOCOS method. Alternatively, the sacrificial polysilicon layer may be replaced with any other film that may be removed together when the semiconductor substrate is etched to a certain depth when dry etching is performed. Therefore, the content described in the following preferred embodiments is exemplary and not intended to be limiting.
    2 to 7 are cross-sectional views illustrating a method of manufacturing a field effect transistor to prevent horizontal diffusion of source / drain regions according to an embodiment of the present invention.
    Referring to FIG. 2, a trench isolation process is performed on the semiconductor substrate 100 to form a field oxide layer 102 defining an active region and an inactive region. Subsequently, an oxidation process is performed on the surface of the semiconductor substrate 100 to form a gate insulating film 104. The polysilicon layer for the gate electrode 106, the oxide layer to be used as the capping layer 108, and the sacrificial polysilicon layer 110 are sequentially stacked on the semiconductor substrate 100 on which the gate insulating layer 104 is formed. Subsequently, a gate pattern is formed by etching the polysilicon layer for the gate electrode 106, the oxide film to be used as the capping layer 108, and the sacrificial polysilicon layer 110, and using a nitride film (SIN) on the sidewall thereof. (112, gate spacer) is formed.
    The gate pattern referred to in the present invention refers to a pattern including a plurality of films connected to the gate electrode 106.
    Referring to FIG. 3, in the semiconductor substrate on which the gate pattern is formed, overetching may be performed to etch exposed polysilicon. Accordingly, a portion of the semiconductor substrate 100 existing between the gate pattern and the field oxide layer 102 and the sacrificial polysilicon layer 110 exposed from the gate pattern are removed, and etching is performed on the gate spacer 112 ′, thereby increasing its height. Is reduced similarly to the capping layer 108. Subsequently, a film quality for forming an oxide film 114, for example, a vertically buried oxide layer, is deposited on the entire surface of the semiconductor substrate which has undergone the excessive etching.
    Referring to FIG. 4, dry etching is performed on the oxide layer to form a vertical buried oxide layer 114 ′ in a shape in which the oxide layer remains only on the sidewall of the semiconductor substrate 100 removed by the excessive etching. At this time, the height of the vertical buried oxide layer 114 ′ is adjusted to the dry etching conditions so as to be less than the surface of the original semiconductor substrate 100. Therefore, polysilicon is exposed to the outside of the gate pattern lower portion D and the overetched portion C on the surface of the semiconductor substrate 100.
    Referring to Figure 5, the epitaxial layer 116 by the SEG is grown on the resultant. At this time, the growth of silicon takes place in two places. One is under the gate pattern (D), and the other is the bottom surface (C) of the overetched semiconductor substrate 100. Therefore, the epi layer 116 is formed in the shape (E) protruding from the side of the gate pattern under the influence of the silicon grown under the gate pattern (D), and the epi layer (116) growing on the over-etched bottom surface (C) in the remaining area ( 116 is formed in a plane. Subsequently, an ion implantation is formed using the gate pattern as an ion implantation mask to implant an impurity into the source / drain region 120, and then an ion implanted impurity is activated through a heat treatment process.
    The shape of the protruding epi layer E plays an important role in solving the non-uniform deep junction problem of the source / drain regions occurring in the edge facet of the epi layer in the prior art. That is, impurities implanted in the impurity profile of the entire source / drain region 120 form shallow junctions in the channel region, and source / drain having a uniform shape in the remaining regions. The area 120 will be formed.
    Referring to FIG. 6, the capping layer (108 of FIG. 5) at the top of the gate pattern is removed from the resultant to form a space F in which a silicide layer may be self-aligned in a subsequent process. do. When the capping layer 108 is removed after the source / drain regions 120 are formed, the gate electrode 106 and the epi layer 116, which is the source / drain regions, may be electrically shorted. There is an advantage.
    Referring to FIG. 7, a silicide layer 118, which is an alloy of polysilicon and a metal, is formed by depositing a metal layer for silicide formation on a semiconductor substrate from which the capping layer is removed and performing a heat treatment process. At this time, the metal layer that did not cause the silicide reaction on the gate spacer 112 ′ is removed through a cleaning process. Therefore, the vertical buried oxide layer 114 according to the present invention is subjected to reverse bias in the semiconductor device, even if the source / drain depletion region 124 is expanded in the direction of the arrow under the gate channel. ) Acts as a blocking film that prevents the expansion of the beam into the horizontal direction. Therefore, it plays an important role in suppressing occurrence of short channel effect and suppressing punch through phenomenon due to expansion of the depletion region.
    The present invention is not limited to the above embodiments, and it is apparent that many modifications can be made by those skilled in the art within the technical spirit to which the present invention belongs.
    Therefore, according to the present invention described above, first, by forming a vertical buried oxide layer in the channel portion which can prevent the diffusion of horizontal impurities in the source / drain regions, the change in the threshold voltage due to the short channel effect is reduced, By limiting the horizontal extension of the / drain region, latch-up and punch through phenomena can be significantly reduced.
    Second, in the present invention, the formation height of the epitaxial layer on the edge facet of the epitaxial layer may be further increased to prevent a problem in that the junction is formed at a non-uniform depth in the profile of the source / drain region.
    Third, since the capping layer covering the gate electrode is removed after the epitaxial layer is grown, a short circuit problem between the gate and the source / drain can be suppressed.
    权利要求:
    Claims (4)
    [1" claim-type="Currently amended] Forming a gate pattern in which a gate electrode, a capping layer, and a sacrificial polysilicon layer are sequentially formed on a semiconductor substrate in which device isolation is performed;
    A second process of forming a first gate spacer on sidewalls of the gate pattern;
    Performing a third etching process on the resultant to etch a portion of the semiconductor substrate in a region excluding the sacrificial polysilicon layer of the gate pattern and the gate pattern;
    A fourth step of depositing an insulating film for forming a vertically buried oxide layer on the entire surface of the resultant of the excessive etching;
    A fifth process of performing anisotropic etching on the vertical buried oxide layer such that the vertical buried oxide layer remains only on the lower sidewall of the etched semiconductor substrate;
    A sixth step of forming an epitaxial layer having a protruding shape on the gate pattern by performing selective epitaxial growth (SEG) on the bottom of the etched semiconductor substrate and the portion not covered by the vertical buried oxide layer;
    And a seventh step of removing the capping layer of the gate pattern and forming a silicide layer on the gate electrode and the source / drain region.
    [2" claim-type="Currently amended] The method of claim 1,
    And the capping layer is formed by using an oxide film.
    [3" claim-type="Currently amended] The method of claim 1,
    And after the sixth step, further forming a source / drain having a deep junction, further preventing horizontal diffusion of the source / drain region.
    [4" claim-type="Currently amended] A field effect transistor having a structure manufactured by the method of claim 1.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1999-02-18|Application filed by 윤종용, 삼성전자 주식회사
    1999-02-18|Priority to KR1019990005386A
    2000-09-15|Publication of KR20000056248A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019990005386A|KR20000056248A|1999-02-18|1999-02-18|FET structure with reduced short channel effect and punchthrough|
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