• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: A method is provided to elevate the reliability of a measured value in the measurement of a micro-roughness of the surface of a silicon wafer by employing a calibration method of a measurer. CONSTITUTION: A method for measuring a micro-roughness of a silicon wafer is performed by the following sequences. A surface roughness calibration is performed by a standard sample after finishing the calibration of a measured length of an atomic force microscope. Additionally, the standard sample is measured before the measured value is compared with a real value. If the measured value is not included in the range of an allowable error of the real value, the parameter of an atomic force microscope is reset. After the completion of the calibration of the roughness, the surface roughness of a silicon wafer is measured by the atomic force microscope.
    公开号:KR20000055079A
    申请号:KR1019990003538
    申请日:1999-02-03
    公开日:2000-09-05
    发明作者:김영은
    申请人:이창세；주식회사 실트론；
    IPC主号:
    专利说明:

    How to measure micro roughness of silicon wafer {MICROROUGHNESS MEASURING METHOD OF SILICON WAFER}
    The present invention relates to a method for measuring microroughness of a silicon wafer surface using an atomic force microscope.
    In general, as the semiconductor industry is highly integrated and line width design rules are refined, it is known that the surface characteristics of silicon wafers have a great influence on the performance and yield of devices. In particular, the micro-roughness of the surface of the silicon wafer is of increasing importance as it is highly integrated. The micro roughness of such a silicon wafer surface is measured using an atomic microscope or the like.
    Fig. 1 shows a flow chart of measuring the fine roughness of the wafer surface using a conventional atomic force microscope. Conventional microscopic measurement of the wafer surface using an atomic microscope includes operating the atomic microscope (ST1), and correcting the XY axis (ST2).
    The above-described step of correcting the XY axis (ST2) is the same as the step of measuring the grating sample (ST2-1), the step of measuring the pattern width of the grating sample (ST2-2), comparing the measured value and the true value In step ST2-3, if the measured value is not within a certain range of the true value, the instrument parameters are reset (ST2-4), and if the measured value is within a certain range of the true value, the calibration of the equipment is completed (ST2-3). -5). Then, the roughness and the like of the silicon wafer surface are measured (ST3). Here, the grating sample is a pattern of regular sized patterns, which is to set the measurement length of the instrument based on the size. The measured value is the value obtained by measuring, and the true value is a known value.
    In this method, the conventional atomic force microscope for measuring the roughness of the wafer surface is measured without setting a separate initial value, thereby increasing the range of measurement error, thereby having a problem in that the measurement value is not reliable.
    Accordingly, an object of the present invention is to solve the problems of the prior art described above, and to provide a method of calibrating a device for measuring the micro-roughness of the wafer surface to increase the reliability of the measured value when measuring the surface micro-roughness of the silicon wafer. have.
    1 is a flow chart showing a method for measuring the micro-roughness of a silicon wafer using a conventional atomic microscope;
    2 is a flow chart illustrating a method of measuring the micro-roughness of the wafer using an atomic microscope according to an embodiment of the present invention.
    The present invention provides a method for measuring the surface roughness of a silicon wafer, the method comprising: measuring the micro-roughness measurement equipment of the silicon wafer surface based on the grating sample to set the measurement length of the equipment before measuring the surface of the silicon wafer, the equipment And measuring the surface roughness of the standard sample after the measuring length setting step of the to reset the roughness measurement parameters of the equipment.
    In particular, resetting the roughness measurement parameter of the above-described equipment
    Measuring a standard sample having a certain roughness, comparing the measured value with a true value after measuring the standard sample, and determining if the measured value is not within the tolerance of the true value, and resetting the parameter of the equipment. It provides a method of calibrating the surface roughness measurement equipment of the silicon wafer further comprising the step.
    The above-mentioned standard sample consists of a glass substrate for liquid crystal display devices which has surface roughness of the range of 1-3 GPa.
    Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in more detail.
    FIG. 2 is a flowchart showing an embodiment according to the present invention, which shows a method of correcting a parameter of a suitable atomic microscope in advance in order to measure the surface roughness of a silicon wafer. As described above, a turn-on step (ST10) for operating the atomic microscope by adjusting the atomic microscope to measure the surface roughness of the silicon wafer, adjusting and setting the measurement length of the atomic microscope (ST20), and setting the measurement length of the atomic microscope Resetting the roughness measurement parameter of the equipment by measuring the surface roughness of the standard sample after the step (ST30) and measuring the surface roughness of the silicon wafer by the electron microscope (ST40) after the setting step is finished.
    Correcting and setting the measurement length of the atomic microscope described above (ST20) comprises measuring the grating sample (ST21), measuring the pattern area of the grating sample after measuring the grating sample (ST22), and the measured value and Comparing the known true value (ST23), comparing the measured value with the true value, and resetting the measurement length of the atomic microscope (ST24) so that the measured value does not fit within the error range of the true value, the measured value is the true value If it is in the error tolerance of the step further comprises the step of completing the correction of the measurement length (ST25). By resetting the measurement length of the atomic microscope in the step ST24 of resetting the measurement length of the atomic microscope described above, the reference of the measurement length of the atomic microscope can be set. As described in the prior art, the grating sample is a pattern in which regular patterns are arranged regularly, and the measuring length of the equipment is set based on the size.
    Subsequently, when the measurement length correction of the atomic microscope is completed (ST25), the surface roughness correction step (ST30) of the atomic microscope by the standard sample is performed, which is the step of measuring the standard sample (ST31), the measured value and the true value. Comparing step (ST32), if the measured value is not within the error tolerance of the true value, the step of resetting the parameters of the atomic microscope (ST33), and the step of completing the roughness correction (ST34).
    After such correction, the surface roughness of the silicon wafer is measured by an atomic force microscope. On the other hand, the above-mentioned standard sample is preferably a glass substrate having a surface roughness of about 1 to 3 GPa. As for such a glass substrate, the glass substrate used for a liquid crystal display device is more preferable. These standard samples satisfy the conditions to be used in the present invention. The conditions of the standard sample to be used in the present invention should have a constant roughness on the entire surface of the standard sample, the surface of the standard sample should not be easily oxidized in the atmosphere, the standard sample surface should not be damaged by the tip, It should have roughness similar to that of the sample surface to be measured.
    Table 1 below shows the measured surface roughness of the glass substrate for a liquid crystal display device used as a standard sample for the micro-crossing correction of the atomic microscope in the present invention. The manufacturer of the surface roughness using equipment is Park Scientific Instruments (PSI), the instrument model name is AutoProbe M5, and the measurement area is 2 × 2 μm 2 .
    Table 1
    Number of measurementsGlass substrate surface roughness measurement of liquid crystal displayRoughness Average of Silicon Wafer One1.48 Å0.8 to 1.1 Å 21.37 Å
    As shown in Table 1 above, the glass substrate for the liquid crystal display device satisfies the conditions to be used in the present invention, such that the surface roughness satisfies the condition of 1 to 3 GPa, and thus a standard sample for correcting the surface roughness parameter of the atomic microscope Is suitable as.
    In the present invention, when measuring the micro-roughness of the silicon surface by an atomic microscope, by repeatedly using the glass substrate for the liquid crystal display device as a standard sample to correct the atomic microscope before the measurement, the daily deviation of the measurement value is minimized and the error of the measurement range You can increase the reliability of your measurements by reducing.
    权利要求:
    Claims (4)
    [1" claim-type="Currently amended] In the method of measuring the surface roughness of a silicon wafer,
    Before measuring the surface of the silicon wafer to calibrate the micro roughness measurement equipment of the silicon wafer surface based on the grating sample to set the measurement length of the equipment,
    Resetting the roughness measurement parameter of the device by measuring the surface roughness of the standard sample after the measuring length setting step of the device
    Method for calibrating the surface roughness measurement equipment of the silicon wafer comprising a.
    [2" claim-type="Currently amended] The method of claim 1, wherein resetting the roughness measurement parameter of the equipment
    Measuring a standard sample with a constant roughness,
    Determining the same by comparing the measured value with the true value after measuring the standard sample;
    Resetting the parameters of the instrument if the measured value is not within the tolerance of the true value
    Method for calibrating the surface roughness measurement equipment of the silicon wafer further comprising.
    [3" claim-type="Currently amended] The method of claim 1 or 2, wherein the standard sample has a surface roughness of between 1 GPa and 3 GPa using a glass substrate.
    [4" claim-type="Currently amended] The method of claim 1 or 2, wherein the standard sample comprises a glass substrate for a liquid crystal display device.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1999-02-03|Application filed by 이창세, 주식회사 실트론
    1999-02-03|Priority to KR1019990003538A
    2000-09-05|Publication of KR20000055079A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019990003538A|KR20000055079A|1999-02-03|1999-02-03|Microroughness measuring method of silicon wafer|
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