• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: An image sensor is provided to improve the photo sensitivity by improving a transmission rate of a beam inputted to a light receiving element. CONSTITUTION: An oxynitride layer(201) and HSO layer(202) are selectively deposited on an upper portion of a light receiving element(102). Elements including the light receiving element(102) are formed on a substrate(101). An insulation layer and a metal wire are formed on the substrate(101). For protecting the elements, an oxide layer(107) is provided. The insulation layer and the oxide layer(107) are selectively etched to expose the light receiving element(102). The oxynitride layer(201) and HSO layer(202) are deposited on the exposed light receiving element(102) and are flattened.
    公开号:KR20000044584A
    申请号:KR1019980061083
    申请日:1998-12-30
    公开日:2000-07-15
    发明作者:우선웅
    申请人:김영환；현대전자산업 주식회사；
    IPC主号:
    专利说明:

    Image sensor with high light sensitivity
    The present invention relates to a method of manufacturing an image sensor, and more particularly to a method of manufacturing an image sensor having a high light sensitivity.
    In general, an image sensor is a semiconductor device that converts an optical image into an electrical signal. In a double charge coupled device (CCD), individual metal-oxide-silicon (MOS) capacitors are very different from each other. A device in which charge carriers are stored and transported in a capacitor while being in close proximity, and a CMOS (Complementary MOS) image sensor is a CMOS technology that uses a control circuit and a signal processing circuit as peripheral circuits. Is a device that employs a switching method that makes MOS transistors by the number of pixels and sequentially detects the output using them.
    In manufacturing such various image sensors, efforts are being made to increase the photo sensitivity of the image sensor. For example, the CMOS image sensor is composed of a light sensing portion for detecting light and a CMOS logic circuit portion for processing the detected light into an electrical signal to make data. In order to increase the light sensitivity, the area of the light sensing portion in the overall image sensor area is increased. Efforts have been made to increase the percentage of occupancy (commonly referred to as "Fill Factor"), but there is a limit to such efforts under a limited area since the logic circuit part cannot be removed. Therefore, in order to increase the light sensitivity, a lot of research has focused on the condensing technology that changes the path of light incident to the area other than the light sensing part and collects the light sensing part, and one of them forms a micro lens on the color filter. That's how. However, the method of improving the light sensitivity by the condensing technology has reached a certain limit to increase the light sensitivity as the image sensor becomes more highly integrated.
    Therefore, the light transmittance must be prevented from being lowered by the thin films (insulating films) stacked on the light sensing element (photodiode) to improve the light sensitivity.
    1 is a cross-sectional view schematically showing a conventional image sensor structure, and shows structures of layers stacked on a light receiving element (photodiode).
    Referring to FIG. 1, a light receiving device 102, such as a photodiode, is formed on a silicon substrate 101, and a pre-metal dielectrics (PMD) layer 103 is formed thereon, and a first metal layer (top) is formed thereon. 104, an inter-metal dielectric layer 105, and a second metal layer 106 are formed in this order. An oxide film 107 and a nitride film 108 are sequentially stacked on the second metal layer 106 as a protective film for protecting the device, and in the case of a color image sensor, a color filter array (CFA) 109 and an OCM are disposed thereon. (over coating material) layer 110 is formed in sequence. And a microlens (not shown) for condensing is formed thereon.
    The OCM layer 110 is applied for the purpose of uniform manufacturing of the microlenses and for adjusting the focal length, and a composite polymer similar to the microlens material or an oxide film having a refractive index similar to the microlens material is mainly used. do. As the material of the color filter array 109, a composite multimer such as a dyed photoresist is mainly used. As the PMD layer 103 and the IMD layer 105, a silicon oxide thin film is usually applied.
    As such, the conventional CMOS image sensor has been manufactured based on a back end of line (BEOL) process technology based on double level metalization (DLM) or triple level metalization (TLM). However, the intensity of visible light passing through the microlens, the OCM layer, and the color filter array is about 50% of the intensity incident from the outside, and the light having this intensity passes through the protective film, the IMD layer, and the PMD layer. At this time, the refractive index, extinction coefficient or interface of each layer causes refractive, reflection, and transmission interference. Eventually, the light incident on the light receiving element has a strength that is significantly reduced than the light intensity passing through the color filter array due to the above interaction.
    Therefore, conventionally, since the light of much lower intensity than that of the original target is incident, the light sensitivity of the light receiving element is considerably reduced. In addition, the photocharges formed by the incident light are naturally reduced so that the total number of photocharges accumulated per unit time is reduced. Therefore, when the speed of the device is slow, the photocharges that can be processed per unit time are further reduced, which greatly affects the performance of the device.
    The present invention has been made to solve the problems of the prior art as described above, and an object of the present invention is to provide an image sensor and a method of manufacturing the same by improving the light sensitivity by improving the transmittance of light incident on the light receiving element.
    1 is a cross-sectional view schematically showing a conventional image sensor structure;
    Figure 2 is a cross-sectional view schematically showing the image sensor structure according to an embodiment of the present invention.
    * Explanation of symbols for main parts of the drawings
    101: silicon substrate 102: light receiving element
    103: PMD layer 104: first metal layer
    105: IMD layer 106: second metal layer
    107 oxide film for protective film 108 nitride film
    109: color filter array 110: OCM layer
    201: oxynitride layer 202: HSO layer
    203: silicon oxide film (capping layer)
    The present invention for achieving the above object is characterized in that in the image sensor having a light receiving element, the oxynitride layer and the HSO layer is selectively stacked on the light receiving element.
    In addition, the image sensor manufacturing method of the present invention comprises the steps of preparing a substrate on which the related elements including the light receiving element is formed; Forming an interlayer insulating film and a metal wiring on the substrate; Forming an oxide film for protecting the device; Selectively etching the interlayer insulating layer and the oxide layer stacked on the light receiving element to expose the light receiving element; And stacking and planarizing an oxynitride layer and an HSO layer on the exposed light receiving device.
    DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. do. Like reference numerals designate like elements as in the prior art.
    2 is a cross-sectional view schematically showing an image sensor structure according to an embodiment of the present invention.
    Referring to FIG. 2, a light receiving device 102 such as a photodiode is formed on the silicon substrate 101, and an oxynitride layer 201 and hydrogen silsesquioxane (HSO) are formed in an upper region of the light receiving device 102. Layer 202 is laminated. The oxynitride layer 201 is a kind of anti-reflective coating (ARC) to prevent light reflected from the silicon surface. The hydrogen silsesquioxane (HSO) layer 202 is a low dielectric material having a refractive index of 1.40 and excellent light transmittance. Meanwhile, in the logic element region such as a peripheral circuit other than the region of the light receiving element 102, the pre-metal dielectric layer (PMD) layer 103, the first metal layer 104 and the inter-metal dielectric layer (IMD) layer 105, and The second metal layer 106 is formed in this order, and an oxide film 107 is laminated on the second metal layer 106 as a protective film for protecting the device.
    The HSO layer 202 and the device protection oxide film 107 are flattened while maintaining the same height horizontally, and a silicon oxide film 203 by PECVD is formed thereon as a capping layer thereon, as necessary. A color filter array (CFA) 109 and a microlens (not shown) are formed in this order.
    Preferably, the oxynitride layer 201 has a SiH 4 flow rate of 0.3 SLM, a N 2 0 flow rate of 0.2 SLM, an N 2 flow rate of 2 SLM, a pressure of 30 Torr and a power of 1 KW. Then, it is formed by chemical vapor deposition (CVD) so as to have a thickness of 44 nm and a refractive index of 2.5.
    The PMD layer 103 is formed by stacking a low pressure CVD (LPCVD) TEOS film and an O 3 BPSG film at 300 nm and 500 nm, respectively. The IMD layer 105 is formed by stacking a silicon oxide film and an SOG film. As the material of the color filter array 109, a composite multimer such as a dyed photoresist is mainly used.
    In order to manufacture an image sensor having a structure as shown in FIG. 2, a wafer on which related CMOS devices including the light receiving device 102 are formed is prepared, and then the PMD layer 103, the first metal layer 104 and the IMD layer 105 are prepared. The second metal layer 106 and the oxide film 107 as a protective film are stacked, and the stacked thin films in the upper region of the light receiving device are selectively etched to expose the light receiving device 102. Subsequently, the oxynitride layer 201 and the HSO layer 202 are laminated, and planarized by etching back or chemical mechanical polishing (CMP) to expose the oxide film 107. Thereafter, the capping layer and the color filter array are formed. Since the HSO material has excellent planarization characteristics, the grooves formed on the wafer are excellent in filling the grooves generated by selectively etching the stacked thin films. In addition, the image sensor having the structure of FIG. 2 may be implemented by those skilled in the art in various ways.
    Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
    The present invention is to improve the transmittance of light incident on the light receiving element by selectively forming an HSO layer having excellent light transmittance on the light receiving element, it is possible to manufacture a product having a superior light sensitivity than the conventional image sensor, at the same time the reliability of the device Also secured.
    权利要求:
    Claims (2)
    [1" claim-type="Currently amended] In the image sensor having a light receiving element,
    And an oxynitride layer and an HSO layer selectively stacked on the other part of the light receiving element.
    [2" claim-type="Currently amended] Preparing a substrate on which related elements including a light receiving element are formed;
    Forming an interlayer insulating film and a metal wiring on the substrate;
    Forming an oxide film for protecting the device;
    Selectively etching the interlayer insulating layer and the oxide layer stacked on the light receiving element to expose the light receiving element; And
    Stacking and planarizing an oxynitride layer and an HSO layer on the exposed light receiving device
    Image sensor manufacturing method comprising a.
    类似技术:
    公开号 | 公开日 | 专利标题
    US10367030B2|2019-07-30|Photoelectric conversion device and method for producing photoelectric conversion device
    US9450011B2|2016-09-20|Solid-state image sensor and imaging system
    US9429723B2|2016-08-30|Optical waveguides in image sensors
    US8816457B2|2014-08-26|Sensor structure for optical performance enhancement
    US9257326B2|2016-02-09|Method of making backside illuminated image sensors
    TWI599025B|2017-09-11|Semiconductor image sensor device and method for manufacturing the same
    US8384133B2|2013-02-26|Image sensor comprising anti-reflection layer having high refractive index
    US6617189B1|2003-09-09|Method of fabricating an image sensor
    US7531860B2|2009-05-12|Image sensor and method of forming the same
    US9570503B2|2017-02-14|Ridge structure for back side illuminated image sensor
    US7833817B2|2010-11-16|Fabricating method of image sensor
    US7803647B2|2010-09-28|Optical transmission improvement on multi-dielectric structure in advance CMOS imager
    US7883917B2|2011-02-08|Semiconductor device with bonding pad
    US7259791B2|2007-08-21|Method of making solid-state image pickup device in-layer lens with antireflection film with intermediate index of refraction
    US7400003B2|2008-07-15|Structure of a CMOS image sensor and method for fabricating the same
    US8525098B2|2013-09-03|Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
    KR100860466B1|2008-09-25|CMOS Image Sensor and Method for Manufacturing thereof
    US6861686B2|2005-03-01|Structure of a CMOS image sensor and method for fabricating the same
    US8187909B2|2012-05-29|Backside illuminated image sensor having deep light reflective trenches
    USRE44637E1|2013-12-10|Method of fabricating an imaging device for collecting photons
    US10269857B2|2019-04-23|Image sensor comprising reflective guide layer and method of forming the same
    US8766340B2|2014-07-01|Solid-state imaging apparatus and manufacturing method thereof
    US7544982B2|2009-06-09|Image sensor device suitable for use with logic-embedded CIS chips and methods for making the same
    CN101494229B|2010-12-08|Solid-state imaging element
    US7524690B2|2009-04-28|Image sensor with a waveguide tube and a related fabrication method
    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-12-30|Application filed by 김영환, 현대전자산업 주식회사
    1998-12-30|Priority to KR1019980061083A
    2000-07-15|Publication of KR20000044584A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019980061083A|KR20000044584A|1998-12-30|1998-12-30|Image sensor having high photo sensitivity|
    [返回顶部]