• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    PURPOSE: A method for examining defect of a semiconductor device is provided to eliminate noises when detecting the semiconductor device, by changing filter values in a process of detecting outer defect related to a mask pattern of the semiconductor device. CONSTITUTION: A method for examining defect of a semiconductor device compares pixels with neighboring patterns and detects defect which are not conformed. The defect examining method eliminates noises by making a gray level of a matrix array in a filter, which is used for finding out substantial defect. The gray level have over 70 in the middle and under 55 in the circumference.
    公开号:KR20000027842A
    申请号:KR1019980045878
    申请日:1998-10-29
    公开日:2000-05-15
    发明作者:박용준
    申请人:김영환；현대전자산업 주식회사；
    IPC主号:
    专利说明:

    Fault inspection method of semiconductor device
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a defect inspection method of a semiconductor device, and more particularly, to a defect inspection method of a semiconductor device that can effectively reduce noise in a process of detecting an appearance defect related to a mask pattern of a device on a peninsula. will be.
    As ultra-fine technology is developed to manufacture next-generation ultra high-density semiconductor devices, and high resolutions of 0.1 to 0.25 µm fine line widths can be achieved, defects affecting devices are becoming smaller and smaller. As the density of such patterns increases, it is difficult to detect defects by conventional optical defect inspection by optical microscopy. Therefore, automatic inspection machines have been devised and put into practical use in KLA, Toshiba, and NEC.
    This method of the automatic tester is divided into two types, the adjacent pattern comparison method and the design data comparison method, and the adjacent pattern comparison method is the most widely used method. Based on the premise that there can be almost nothing in the network, it is compared with an adjacent reference, and if there is a difference, it is determined that the chip is defective somewhere.
    KLA's most widely used auto-inspector, for example, is a sensor that senses the amount of light reflected from a light source, such as a helium-xenon lamp, depending on the surface characteristics on the wafer and digitizes it. This is classified and compared with adjacent chips on both sides to treat defects as defects.
    Color variation defects occur mainly in two cases, the first being caused by the unevenness of the thickness of the photoresist film during the exposure process, and the second when the cleaning or wet etching is performed. In both cases, there is no big problem in the process, but since it is classified as a defect in the defect detection equipment, it is difficult to accurately collect defects affecting the semiconductor device and wastes a lot of time during inspection.
    Therefore, in order to reduce the cause of such noise in the defect detection of semiconductor devices, devices such as UBB (Ultra Broad Band) and SAT (Segmented Auto Threshold) are attached and used, but such equipment is used in addition to the existing defect detection equipment. There are problems such as the purchase of new expensive equipment and the addition of a new process for noise detection.
    Therefore, the technical problem to be achieved by the present invention is to detect the defects by comparing the pixels of the adjacent pattern in order to effectively reduce the effect of noise due to the topology of the device when detecting the defect of the semiconductor device as described above Note that the differential value captured by the pixel sensor changes slowly as it passes through the filter, in the case of noise that is not a real defect, while the color displacement defect does not change smoothly, so it is detected as a defect and not detected as noise. The present invention provides a method of reducing noise of color displacement defects by modifying the reference filter.
    1A to 1C are photographs of defect inspection results according to a conventional defect inspection method.
    2 is a photograph of the result of implementing the defect inspection method according to an embodiment of the present invention.
    A defect detection method of a semiconductor device according to the present invention for achieving the above technical problem is a defect inspection apparatus for comparing a pixel of the adjacent pattern to detect a mismatch as a defect, the filter used to reduce noise and find the actual defect The gray level of the matrix array is set to 70 or more in the center and less than 55 in the periphery thereof to effectively remove noise.
    In the defect detection method of the semiconductor device of the present invention, the gray level is obtained by grading the degree of brightness of reflected light on the wafer surface by the light source. For example, KLA's automatic defect inspection machine can use a grade of 255.
    In the defect detection method of the semiconductor device of the present invention, it is preferable to use the (3x3) matrix structure of F3, which is a heavy filter, in the case of using the KLA's automatic defect checker with the following gray level values.
    Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.
    1A to 1C are photographs of a photomask in accordance with a conventional defect detection method.
    When detecting a defect of a photomask using a conventional KLA automatic inspection machine, the structure of the conventional heavy filter F3 filter is composed of the following (3x3) matrix structure.
    When the defect is detected by using such a conventional filter, the map photo of the photomask shows a color displacement noise region as indicated by a thick ellipse line in FIG. 1A. The total number of defects at this time was 2013, including the color displacement defects. When the OM and SEM photographs of these color shift noise portions were checked, there was no abnormality on the actual device as shown in FIGS. 1B and 1C.
    According to the defect detection method of the semiconductor device of the present invention, the defect was measured by adjusting the value of the F3 filter as follows using a KLA automatic inspection machine.
    As a result, the color displacement defects did not appear as shown in FIG. 2, and the total number of defects was also 1054, indicating that the effect of noise was greatly reduced.
    As described above and the present invention, a conventional defect inspection apparatus provides a highly effective defect detection method that can effectively remove noise during defect detection of a semiconductor device by simply changing the value of a filter.
    权利要求:
    Claims (2)
    [1" claim-type="Currently amended] A defect inspection apparatus for comparing a pixel of an adjacent pattern and detecting a mismatch as a defect,
    A method for detecting defects in a semiconductor device, characterized in that noise is removed by setting the gray level of the matrix matrix of the filter used to reduce noise and find actual defects to be 70 or more in the center and less than 55 in its periphery.
    [2" claim-type="Currently amended] 2. The method of detecting a defect of a semiconductor device according to claim 1, wherein the filter has a gray level value of the matrix array as follows.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-10-29|Application filed by 김영환, 현대전자산업 주식회사
    1998-10-29|Priority to KR1019980045878A
    2000-05-15|Publication of KR20000027842A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019980045878A|KR20000027842A|1998-10-29|1998-10-29|Method for examining defect of semiconductor device|
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