• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention is a deionized water preheating system of the wet station, which requires a high temperature deionized water by heating the deionized water at room temperature to a high temperature in the equipment of the wet station without separately installing a heating unit for heating the deionized water at room temperature. In order to stably supply to the tank, it provides a deionized water preheating system having a preheating unit capable of preheating the deionized water at room temperature to a high temperature by utilizing the radiant heat emitted from a plurality of chemical tanks. The preheating unit according to the present invention includes a preheating guide installed around a plurality of chemical baths, and a high temperature pipe installed in the preheating guide among pipes supplied with deionized water at room temperature, and connected to a washing tank by turning around the plurality of chemical baths a plurality of times. In addition, the deionized water at room temperature supplied to the high temperature pipe is indirectly heated by receiving radiant heat emitted from the chemical tank while turning around the chemical tank a plurality of times.
    公开号:KR20000021331A
    申请号:KR1019980040350
    申请日:1998-09-28
    公开日:2000-04-25
    发明作者:정찬군
    申请人:윤종용；삼성전자 주식회사；
    IPC主号:
    专利说明:

    System for heating deionize water of wet station
    The present invention relates to a wet station, and more particularly, to a deionized water preheating system of a wet station for preheating the deionized water at room temperature to a high temperature by using radiant heat emitted from a chemical bath.
    The wet station is an apparatus for performing an etching step and a rinsing step for a wafer manufacturing process, and a wafer carrier having a plurality of wafers loaded in a chemical bath. The wafer is put in a wet etching process, and then the wafer carrier is put in a rinse bath, and after the cleaning process, the wafer is put in a spin dryer and the wafer is dried.
    1 is a schematic diagram showing a system for supplying chemical and deionized water of a wet station according to the prior art. In FIG. 1, the arrows indicate the direction of transfer of the wafer, and the other lines indicate the connector 78.
    Referring to FIG. 1, the wet station 100 includes two chemical baths 12 and 22 made of quartz, and three cleaning baths 32, 42 and 52 arranged in a row at predetermined intervals. Each chemical tank 12, 22 is provided with a chemical and each cleaning tank 32, 42, 52 has a chemical and deionized water supply system (hereinafter referred to as a "supply system") for supplying deionized water. Has an installed structure Hereinafter, in order to distinguish the chemical tanks 12 and 22 and the cleaning tanks 32, 42 and 52 which were provided in order, the 1st chemical tank 12, the 2nd chemical tank 22, and the 1st cleaning tank 32 from the front. ), The second washing tank 42 and the third washing tank 52. On the other hand, although not shown, the supply unit for supplying the wafer to proceed the process is provided in front of the first chemical tank 12, followed by the rotary washing machine and the accommodating portion for receiving the wafer is completed after the third cleaning tank (52) It is.
    The supply system is connected to the chemical tanks 12 and 22, respectively, and supplies chemical supply parts 14 and 24 to supply sulfuric acid (H 2 SO 4 ) and phosphoric acid (H 3 PO 4 ), and washing tanks 32, 42 and 52. Each is composed of a room temperature deionized water supply unit 36 for supplying deionized water at room temperature, respectively, the room temperature deionized water supply unit 36 and the first cleaning tank (2) to supply high temperature deionized water to the first cleaning tank (32). It further comprises a heating unit 34 provided between the 32. In addition, a valve 62 is provided between the chemical tanks 12 and 22, the cleaning tanks 32, 42 and 52, and the connection pipe 78 connecting the supply system.
    Here, the heating unit 34 is a tank in which the heater is embedded, and is a portion in which the deionized water at room temperature is supplied from the room temperature deionized water supply unit 36 to preheat the deionized water at room temperature to a high temperature of about 50 ° C. or higher. When the cleaning process is performed in the first cleaning tank 32, the valve 62 is opened to supply hot deionized water from the heating unit 34 to the first cleaning tank 32, or the normal temperature deionized water supply unit 36 is provided. ) Is supplied with deionized water at room temperature directly to proceed with the cleaning process. Typically, the first washing tank 32 is a washing tank in which a Quick Dumped Rinse (Q.D.R) process is performed.
    In the QDR process, when the wafer on which the wet etching process in the second chemical tank 22 is completed is supplied to the first cleaning tank 32, the hot deionized water preheated by the heater of the heating unit 34 is the first cleaning tank. While bubbling from the bottom of the bottom surface 32 to the first cleaning bath 32, the first bubbling cleaning process for the wafer proceeds for about 60 seconds, followed by draining the hot deionized water. The first spray cleaning process is performed by deionized water at room temperature sprayed from the upper portion of the first cleaning tank 32. Next, the above-described process is performed once more. And about three times of spray cleaning processes with normal temperature deionized water are included.
    Next, the wafer is moved to the second cleaning tank 42 and the third cleaning tank 52 to proceed with the cleaning process using deionized water at room temperature.
    This conventional supply system has the following problems because it is provided with a separate heating unit 34 for heating the deionized water at room temperature to a high temperature.
    First, a heater that heats deionized water at room temperature is a consumable that must be replaced periodically. However, if the heater is broken or malfunctions before the replacement cycle of the heater being used, contaminants enter the tank of the heating unit and are supplied to the first cleaning tank together with the hot deionized water to contaminate or preheat the wafer transferred to the first cleaning tank. This can cause problems with poor ability. And since a heater is a consumable, it bears the cost of heater purchase.
    Second, since the preheated by supplying the deionized water at room temperature to the tank of the heating portion, it is necessary to secure the process time for preheating. Thus, the process time can be long.
    Third, if the deionized water at room temperature filled in the tank of the heating unit is not preheated to the temperature necessary for supplying, the first cleaning process cannot proceed, so that the wafer can be stagnated in the second chemical tank before the first cleaning tank. This can cause process problems such as excessively wet the wafer.
    That is, it can be seen that such a problem is caused by having a separate heating unit for preheating the deionized water at room temperature.
    Accordingly, an object of the present invention is to provide a deionized water preheating system of a wet station capable of preheating deionized water at room temperature to a high temperature in equipment of the wet station without separately installing a heating unit.
    It is still another object of the present invention to provide a deionized water preheating system of a wet station capable of stably supplying hot deionized water.
    1 is a schematic diagram showing a system for supplying chemical and deionized water in a wet station according to the prior art;
    Figure 2 is a schematic diagram showing a preheating system of deionized water of the wet station according to an embodiment of the present invention,
    3 is a partial cutaway perspective view showing a preheating portion of the deionized water preheating system of the wet station in one embodiment of the present invention;
    4 is a plan view showing a preheating unit of the deionized water preheating system installed outside the chemical tank according to one embodiment of the present invention.
    Description of the main parts of the drawing
    112, 122: chemical tank 114, 124: chemical supply unit
    132, 142, 152: washing tank 136: room temperature deionized water supply unit
    162: valve 170: deionized water preheating system
    172: high temperature piping 173: preheating unit
    174: preheating guide 175: installation space
    176: home line 178: connector
    200: wet station
    In order to achieve the above object, the present invention is a deionized water preheating system of a wet station in which a plurality of chemical baths and a plurality of cleaning baths are installed in sequence, and a wet etching process and a cleaning process are performed. Wow; A pre-heating guide having a plurality of installation spaces in which a plurality of chemical baths can be respectively installed, wherein the chemical baths are spaced at predetermined intervals with respect to the inner surface of the installation space; And one end is connected to the deionized water supply, the other end is a high temperature pipe connected to a specific cleaning tank that requires the supply of high temperature deionized water, the center portion of the high temperature pipe is installed so as to pivot multiple times on the inner side of the plurality of installation spaces, High temperature piping spaced at predetermined intervals from the outer surface of the chemical tank to be installed in the space; wherein the deionized water at room temperature supplied from the deionized water supply unit to the high temperature piping passes through the high temperature piping of the inner surface of the installation space The pre-heated deionized water pre-heating system of the wet station, characterized in that it is preheated indirectly by the radiant heat released toward the installation space in the supply to a specific cleaning bath.
    It is preferable to form a groove line in the inner surface of the installation space of the preheating guide according to the present invention, and to install a high temperature pipe there. In addition, the preheating guide and the high temperature pipe are preferably made of Teflon material.
    The specific cleaning bath to which hot deionized water is supplied is the cleaning bath following the plurality of chemical baths, where the Q.D.R process takes place.
    Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention.
    2 is a schematic diagram illustrating a preheating system 170 of deionized water in a wet station in accordance with one embodiment of the present invention. In FIG. 2, the arrows indicate the direction of transfer of the wafer, and the other lines indicate connectors 172 and 178.
    Referring to FIG. 2, the wet station 200 in which the deionized water preheating system 170 is installed includes two chemical baths 112 and 122 made of quartz and three cleaning baths 132, 142 and 152 in a line. They are installed one after another at a predetermined interval, and each chemical tank 112 and 122 has a structure in which a supply system for supplying deionized water to each cleaning tank 132, 142 and 152 is provided. On the other hand, although not shown, the supply unit for supplying the wafer to proceed with the process is provided in front of the first chemical tank 112, the rotary dryer and the receiving unit for receiving the wafer is completed after the third cleaning tank 152 in order It is.
    The supply system is connected to the chemical tanks 112 and 122, respectively, and supplies chemical supply parts 114 and 124 for supplying a mixture of sulfuric acid and phosphoric acid solution, and supplies deionized water at room temperature to the cleaning tanks 132, 142 and 152, respectively. It consists of a room temperature deionized water supply unit 136, in the present invention is provided with a preheating system 170 for supplying high temperature deionized water to the first cleaning tank (132). The preheating system 170 is comprised of the above-mentioned normal temperature deionized water supply part 136 and the preheating part 173 provided in the chemical tank 112,122. In addition, valves 162 are installed between the chemical tanks 112 and 122, the cleaning tanks 132, 142 and 152, and the connecting pipes 172 and 178 connecting the supply systems.
    The preheating unit 173 includes a preheating guide 174 installed around the first chemical tank 112 and the second chemical tank 122 and a connection pipe connected to the normal temperature deionized water supply unit 136 in the preheating guide 174. It is comprised by the high temperature piping 172 which is provided and is connected to the 1st washing tank 132 by turning the 1st chemical tank 112 and the 2nd chemical tank 122 several times. The reason why the preheating guide 174 and the high temperature wiring 172 are installed in the chemical tanks 112 and 122 is that the high temperature pipe 172 is made by using the radiant heat emitted from the chemical tanks 112 and 122 during the process. This is for preheating the deionized water at room temperature passing through the high temperature deionized water at 50 ° C or higher.
    The preheating unit 173 will be described in more detail with reference to FIGS. 3 and 4. 3 is a view showing a preheating unit 173 of the deionized water preheating system according to an embodiment of the present invention, Figure 4 is a diagram of the deionized water preheating system in the chemical bath (112, 122) according to an embodiment of the present invention It is a figure which shows the state which the preheating part 173 installed.
    3 and 4, the preheating guide 174 serves as a protective film to prevent the leakage of radiant heat emitted from the two chemical baths 112 and 122 to the outside, and a high temperature pipe 172 may be installed. As a part of the basic frame, it is made of heat-resistant plastic resin such as teflon, and two recessed installation spaces in which two chemical tanks 112 and 122 can be installed at predetermined intervals ( 175 is formed. When the chemical tanks 112 and 122 are installed in the installation space 175, the chemical tanks 112 and 122 are preferably spaced apart from the inner surface of the installation space 175 at predetermined intervals. The reason for this installation is that although the preheating guide 174 is made of a heat resistant plastic resin, the chemical baths 112 and 122 contain chemicals heated to a temperature of 120 ° C to 173 ° C as the process proceeds. When the chemical baths 112 and 122 are also heated to a temperature similar to that of the chemicals and the preheating guides 174 made of plastic contact the outer surfaces of the chemical baths 112 and 122, the shape of the preheating guide is deformed or preheated. This is because a defect may occur that the guide adheres to the chemical bath.
    One end of the high temperature pipe 172 is connected to the room temperature deionized water supply unit (136 of FIG. 2), and the other end is connected to a cleaning tank that requires supply of high temperature deionized water, that is, the first cleaning tank 132, and the center portion is The inner surfaces of the two installation spaces 175 are installed to be rotated a plurality of times. At this time, the high temperature pipe 172 installed in the installation space 175 is installed spaced apart at predetermined intervals from the outer surface of the chemical tank (112, 122). The reason is the same as the reason why the preheating guide 174 is spaced apart from the chemical tanks 112 and 122. The high temperature tubing 172 is also made of Teflon.
    In the installation of the high temperature pipe 172 on the inner side of the installation space 175, the high temperature pipe 172 is stably installed in the installation space 175, and the chemical tank 112 and the inner side of the installation space 175 are fixed. In order to reduce the distance between the 122, it is preferable to form a groove line 176 on which the high-temperature pipe 172 can be installed on the inner side of the installation space 175, and the groove line 176 is a high-temperature wiring ( It is more preferable to form a groove into which about half of 172 can be inserted. In addition, although the high-temperature wiring may be installed on the inner side of the installation space, there is a disadvantage in that the distance between the inner side of the installation space and the chemical bath is far. However, radiant heat emitted from the chemical bath can be used to preheat the deionized water passing through the high temperature wiring to a high temperature.
    The wet etching process and the cleaning process performed in the chemical tanks 112 and 122 and the cleaning tanks 132, 142 and 152 of the wet station using the deionized water preheating system 170 according to the present invention will first be described. Chemicals 112 and 122 are supplied to chemical baths 112 and 122, respectively, at 114 and 124, respectively. In addition, the heater 116 embedded in the chemical tanks 112 and 122 heats the supplied chemical to a temperature required for the wet etching process. In a state of heating to 120 ° C. to 173 ° C., a wafer cassette loaded with a plurality of wafers to be subjected to the wet etching process in the supply unit is immersed in the chemical baths 112 and 122, and the wet etching process is performed for a predetermined time.
    Next, the wafer cassette from which the wet etching process is completed is picked up from the chemical baths 112 and 122 and put into the first cleaning bath 132 to clean the chemicals on the wafer and the residues removed from the wet etching process. The process proceeds. At this time, the QDR process is performed in the first washing tank 132, and high temperature deionized water is supplied to the three washing tanks 132 in order to proceed with the QDR process, and the supply of the high temperature deionized water is a deionized water preheating system ( 170). That is, the deionized water at room temperature passing through the high temperature pipe 172 installed on the inner side of the installation space 175 during the heating and wet etching process for the chemicals supplied to the chemical tanks 112 and 122 is a chemical substance. The preheating is performed by the deionized water having a high temperature of 50 ° C. or higher by radiant heat emitted from the chemical tanks 112 and 122 which are heated according to heating, and is supplied to the first cleaning tank 132 to perform the QDR process.
    Next, the wafer having the cleaning process completed in the first cleaning tank 132 is transferred to the second cleaning tank 142 and the third cleaning tank 152 to remove the deionized water at room temperature supplied from the normal temperature deionized water supply unit 136. The used washing process is advanced.
    In this way, in order to utilize the radiant heat emitted from the plurality of chemical tanks 112 and 122, the deionized water at room temperature is converted into high temperature deionized water by utilizing the structure of the high temperature piping 172 in which the chemical tanks 112 and 122 are pivoted. The preheating invention belongs to the scope of the technical idea of the present invention.
    Therefore, according to the structure of the present invention, it is possible to preheat the deionized water at room temperature to high temperature deionized water by using radiant heat emitted from a chemical tank without a preheating means such as a separate heater.
    And since the heating part which was conventionally required is removed, the problem by a heating part can be solved.
    权利要求:
    Claims (5)
    [1" claim-type="Currently amended] It is a deionized water preheating system of the wet station in which a plurality of chemical tanks and a plurality of cleaning tanks are installed in sequence, and a wet etching process and a cleaning process are performed.
    Room temperature deionized water supply unit for supplying deionized water at room temperature;
    A preheating guide having a plurality of installation spaces in which the plurality of chemical baths can be respectively installed, and wherein the chemical baths are spaced at predetermined intervals with respect to an inner surface of the installation space; And
    One end is connected to the deionized water supply part, and the other end is a high temperature pipe connected to a specific cleaning tank that requires supply of high temperature deionized water, and a central portion of the high temperature pipe is installed to be pivoted a plurality of times on inner surfaces of the plurality of installation spaces. And high temperature pipes spaced apart at predetermined intervals from an outer surface of the chemical bath to be installed in the installation space.
    The deionized water at room temperature supplied from the deionized water supply unit to the high temperature pipe is preheated indirectly by radiant heat emitted from the chemical tank toward the installation space while passing through the high temperature pipe of the inner side of the installation space and supplied to the specific cleaning tank. Deionized water preheating system of the wet station.
    [2" claim-type="Currently amended] The deionized water preheating system of the wet station of claim 1, wherein a groove line is formed on an inner side surface of the installation space in which the high temperature pipe may be installed.
    [3" claim-type="Currently amended] 2. The deionized water preheating system of claim 1, wherein the high temperature tubing is made of teflon material.
    [4" claim-type="Currently amended] 4. The deionized water preheating system of claim 3, wherein the preheating guide is made of Teflon material.
    [5" claim-type="Currently amended] 2. The deionized water preheating system of the wet station of claim 1, wherein the specific cleaning bath is a cleaning bath following a plurality of the chemical baths.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-09-28|Application filed by 윤종용, 삼성전자 주식회사
    1998-09-28|Priority to KR1019980040350A
    2000-04-25|Publication of KR20000021331A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019980040350A|KR20000021331A|1998-09-28|1998-09-28|System for preheating deionized water in wet station|
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