• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Particles are then depoted in a flexible stainless steel tube that facilitates connection between a vertical furnace and a reactive gas supply system for supplying the reactant gas to a vertical deposition furnace. An LP CVD facility is disclosed that has a particle inflow prevention device that prevents process defects caused by particles introduced into a vertical deposition together with a reaction gas by separating from this flexible stainless tube. According to the present invention, a wafer board on which a wafer is loaded is loaded to form a deposition film on a wafer, a pressure generating portion for forming a predetermined pressure inside the deposition furnace, and a deposition furnace so that a desired deposition film is formed on the wafer. It includes a reaction gas supply system for supplying gas, and a flexible tube is installed between the reaction gas supply system and the deposition furnace, and a flexible tube for filtering particles generated in the flexible tube between the flexible tube and the deposition furnace. The filter unit is formed.
    公开号:KR19990056589A
    申请号:KR1019970076587
    申请日:1997-12-29
    公开日:1999-07-15
    发明作者:강희세；조성범；김진성；박재구
    申请人:윤종용；삼성전자 주식회사；
    IPC主号:
    专利说明:

    Low pressure vapor deposition equipment with particle ingress prevention device
    The present invention relates to an LP CVD apparatus (low pressure vapor deposition equipment) having a particle inflow prevention apparatus, and more particularly, a reaction for supplying a reaction gas into a vertical furnace and a vertical deposition furnace of a low pressure vapor deposition equipment. Process defects caused by particles introduced into the vertical deposition together with reactant gas after particles are depoted in a flexible stainless steel tube that facilitates the gas supply system to be separated from the flexible stainless steel tube. The present invention relates to an LP CVD facility having a particle inflow prevention device that prevents this from occurring.
    In general, the LP CVD apparatus injects certain reaction gases into a certain temperature and a low pressure funnel, and maintains the appropriate conditions. The process of depositing on the silicon wafer used as the mother material of this semiconductor product is performed.
    The LP CVD apparatus has a good step coverage of the deposited film, and can deposit a good quality deposited film on a large amount of wafers, thereby enabling a low production cost process.
    1 and 2 show a conventional LP CVD facility.
    Conventional LP CVD equipment is a reactor (funace) 10 as a whole, a low pressure generating unit 30, which is a low pressure forming device that makes the interior of the deposition in a low pressure state, the reaction gas for supplying the reaction gas to the deposition furnace (10) It is formed of a supply system 20.
    The reaction gas supply system 20 includes a reaction gas supply unit 28 for supplying a reaction gas, a gas filter 21 for removing particles contained in the reaction gas when the reaction gas flows into the deposition furnace 10, and , A plurality of air valves 22 and 24 for supplying / closing the reaction gas, a mass flow controller 23 for controlling the flow rate of the reaction gas, and the reaction gas into the deposition furnace 10. A flexible tube formed between the nozzle 26 and the air valve 24 to facilitate disassembly / assembly of the nozzle 26 and the deposition furnace 10 and the reaction gas supply system 20 which are injected into the inside. (flexible tube; 25). The inside of this flexible tube 25 is not electropolishing.
    In addition, the deposition furnace 10 includes an outer tube 1 and an inner tube 2 having different diameters, a wafer boat 3 positioned inside the inner tube 2, an outer tube 1, and an inner tube 2. ) And is formed as a through hole (not shown) for accommodating the nozzle 26 of the reaction gas supply system 20. In addition, the outer tube 1 is provided with a waste gas generated after the reaction is completed and an exhaust port (not shown) through which unreacted gas is exhausted.
    The exhaust port is provided with a low pressure generating section 30.
    The low pressure generator 30 includes an exhaust tube 36 connected to an exhaust port of the deposition furnace 10, a vacuum pump 32 connected to the exhaust tube 36, and a pressure drop within the deposition furnace 10. It consists of the scrubber 34 which is a neutralizing apparatus which neutralizes the unreacted gas and waste gas exhausted through the vacuum pump 32. As shown in FIG.
    The operation of the conventional LP CVD apparatus configured as described above will be described with reference to the accompanying drawings. After the wafer boat 3 on which the wafer to be processed is loaded is set in the deposition furnace 10, the vacuum pump 32 is turned on. Through the deposition furnace 10 to form a constant low pressure inside, the deposition temperature is set. When the desired low pressure state and the process temperature are set in the deposition furnace 10, the reaction gas supply system 20 transfers the reaction gas from the reaction gas supply unit 28 to the gas filter 21, the flow control unit 23, and the flexible tube. Reaction gas passed through the flexible tube 25 is injected into the inner tube 2 inside the deposition furnace 10 through the nozzle 26.
    The reaction gas injected into the inner tube 2 undergoes a chemical reaction to change the phase from the gas phase to the solid phase, and the solid generated as the product of the phase change is deposited on the wafer loaded on the wafer boat 3.
    Thereafter, the unreacted gas that has not reacted and the waste gas generated after the reaction are moved to the space between the inner tube 2 and the outer tube 1, and then exhausted to the scrubber 34 through the vacuum pump 32.
    However, the conventional LP CVD equipment had the following problems.
    The reaction gas supplied from the reaction gas supply part passes through the flow control part, passes through the flexible tube, and finally flows into the deposition furnace through the nozzle, and the flexible tube inevitably generates a curved part, and thus reacts to the curved part. Depo of the thin deposited film due to the gas is very easily generated, and the deposited film is separated from the flexible tube even by a small impact from the outside and flows into the deposition together with the reaction gas, causing process defects due to particles.
    For this reason, the flexible tube is periodically separated to remove the deposited film deposited on the inner surface of the flexible tube by an etching method using a chemical. Here, various problems are generated.
    The biggest problem is that the deposited film deposited on the flexible tube is etched by the chemical, and then the chemical is cleaned with ultrapure water, and then inert gas such as nitrogen gas is blown into the flexible tube for a long time to remove the ultrapure water again. Since the removal time is long, the ultrapure water removal time is long, even after the ultrapure water is removed by nitrogen, a small amount of ultrapure water remains.
    Accordingly, the present invention has been devised in view of such a conventional problem, and the LP CVD apparatus having the particle inflow prevention apparatus of the present invention uses a flexible tube that generates a large amount of particles, and regenerates particles generated from the flexible tube. In order to filter, a filter for finally filtering particles is added between the flexible tube and the deposition furnace to prevent particles generated from the flexible tube from entering the deposition.
    1 is a conceptual diagram showing a conventional LP CVD facility.
    Figure 2 is a block diagram showing a conventional LP CVD facility.
    3 is a conceptual diagram illustrating an LP CVD apparatus having a particle inflow prevention apparatus according to the present invention.
    4 is a block diagram showing an LP CVD facility according to the present invention.
    LP CVD equipment having a particle inflow prevention apparatus for achieving the object of the present invention is a deposition furnace to load a wafer boat loaded with a wafer to form a deposition film on the wafer, and to form a predetermined pressure inside the deposition furnace And a pressure gas generation unit and a reaction gas supply system for supplying a reaction gas to the deposition furnace so that a desired deposition film is formed on the wafer, and a flexible tube is installed between the reaction gas supply system and the deposition furnace, and the flexible tube and the deposition furnace. Between the furnace is characterized in that the flexible tube filter portion for filtering the particles generated in the flexible tube is formed.
    Hereinafter, an LP CVD apparatus having an apparatus for preventing particle inflow of the present invention will be described with reference to FIGS. 3 and 4.
    LP CVD apparatus having a particle inflow prevention apparatus of the present invention is a deposition furnace 110 for performing deposition on a wafer as a whole, a reaction gas supply system 120 for supplying a reaction gas to the deposition furnace 110, and the deposition furnace ( Particles generated by the flexible tube formed in the low pressure generating unit 130 and the reaction gas supply system 120 to make the low pressure 110 and exhaust the waste gas and unreacted gas generated in the deposition furnace It is composed of a particle inflow prevention unit to prevent the flow into the deposition furnace (110).
    To describe these in more detail, the vapor deposition furnace 110 includes an outer tube 111 having a vertical shape, an inner tube 112 that is inserted into the outer tube 111 because the diameter is smaller than that of the outer tube 111, and It is formed by the flange 114 which supports the outer tube 111 and the inner tube 112. As shown in FIG.
    The inner side of the inner tube 112 is loaded with a wafer boat 113 carrying a plurality of wafers.
    Meanwhile, a reaction gas supply system 120 is connected to the inner tube 112, and a low pressure generation unit 130 is connected to the outer tube 111.
    The reaction gas supply unit 128 that connects the reaction gas is in communication with the reaction gas supply system 120.
    The reaction gas supply unit 128 is connected to the first filter 121 and the connection pipe 129 for filtering particles contained in the reaction gas supplied from the reaction gas supply unit 128.
    The amount of the reaction gas required for the process is controlled while the reaction gas filtered by the particles in the first filter 121 passes through the flow rate control unit MFC 123 and the plurality of air valves 122 and 124.
    This air valve 124 is in communication with the flexible tube 125.
    The inner surface of the flexible tube 125 is not subjected to electropolishing, and the flexible tube 125 is formed so that many wrinkles are formed so that the tube can be bent or unfolded freely. To facilitate the work.
    However, the flexible tube 125 is easy to assemble / disassemble, but the thin film-type deposited film mainly deposited on the pleats of the flexible tube 125 is easy even if a very small impact is applied to the flexible tube 125. Particles generated from the flexible tube 125 separated from the inner surface of the castle tube 125 are immediately introduced into the inner tube 112 of the deposition furnace 110.
    On the other hand, at the end of the flexible tube 125, a second filter 126, which is a particle inflow prevention device for filtering particles generated from the flexible tube 125 is formed.
    A nozzle 127 for injecting the reaction gas into the inner tube 112 is formed in the second filter 126, which is a particle inflow prevention device for filtering the reaction gas including the particles generated by the flexible tube 125 again. have.
    The nozzle 127 is inserted through the through-holes formed in the outer tube 111 and the inner tube 112 again, and then is formed to inject the reaction gas into the inner tube 112.
    The low pressure generating unit 130 in communication with the outer tube 111 is in communication with the outer tube 111 to make the inside of the outer tube 111 at a low pressure, and pumped from the vacuum pump 132 It consists of the scrubber 134 which neutralizes unreacted gas and waste gas.
    Referring to the accompanying drawings, the operation of the LP CVD equipment having the present invention, the particle inflow prevention device configured as described above is as follows.
    First, when the temperature in the deposition furnace 110 is set to a process temperature and the pressure in the deposition furnace 110 is set by the vacuum pump 132 of the low pressure generating unit 130, the reaction gas supply system 120 may be The reaction gas supply unit 128 sends the reaction gas to the deposition furnace 110.
    Subsequently, the reaction gas supplied from the reaction gas supply unit 128 passes through the first filter 121 and then passes through the flow rate control unit 123 to set the reaction gas flow rate corresponding to the process conditions, and to adjust the flow rate according to the process conditions. The set reaction gas passes through the flexible tube 125 again.
    At this time, the flexible tube 125 is formed with wrinkles peculiar to the flexible tube 125, so that even if the inside of the flexible tube 125 is not electropolished, a deposition film by a reaction gas is formed.
    As described above, the deposited film generated by the flexible tube 125 generates particles by the impact even when the flexible tube 125 is subjected to a small impact, and the particles and the reactant gas generated in the flexible tube 125 are mixed. Flows into the second filter 126.
    At this time, the particles of the mixed particle-reaction gas are filtered by the second filter 126 and only the reaction gas is introduced into the deposition furnace 110 so that the deposition furnace 110 may minimize contamination by the particles.
    As described in detail above, another process defect between the flexible tube and the deposition furnace inlet is caused by a process defect caused by particles generated in the pleated portion of the flexible tube being introduced into the deposition furnace and deposited on the wafer located in the deposition furnace. By forming a filter to prevent in advance, there is an effect of preventing the yield, process defects, and the like.
    权利要求:
    Claims (1)
    [1" claim-type="Currently amended] A deposition vessel in which a wafer boat loaded with a wafer is loaded to form a deposition film on the wafer, a pressure generating portion for forming a predetermined pressure inside the deposition furnace, and a reaction gas in the deposition furnace so that a desired deposition film is formed on the wafer. It includes a reaction gas supply system for supplying,
    A flexible tube is installed between the reaction gas supply system and the deposition furnace, and a flexible tube filter unit is formed between the flexible tube and the deposition furnace to filter particles generated from the flexible tube. Low pressure vapor deposition equipment having a particle inflow prevention device.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-12-29|Application filed by 윤종용, 삼성전자 주식회사
    1997-12-29|Priority to KR1019970076587A
    1999-07-15|Publication of KR19990056589A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019970076587A|KR19990056589A|1997-12-29|1997-12-29|Low pressure vapor deposition equipment with particle ingress prevention device|
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