• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A three-dimensional photonic integrated structure comprising a first semiconductor substrate (22) incorporating at least one first waveguide (24), a second semiconductor substrate (32) incorporating at least one second waveguide (34), and at least one intermediate region (INT) situated between the two substrates and comprising at least one dielectric layer (23), the second substrate (3) comprising at least one optical coupler (36) configured to receive a light signal (L1), and the first substrate (2) and said at least one dielectric layer (23) having a reflector element (26) below and facing said at least one lattice coupler (36) and adapted to reflect at least a portion of said light signal (L1).
    公开号:FR3051561A1
    申请号:FR1654523
    申请日:2016-05-20
    公开日:2017-11-24
    发明作者:Frederic Boeuf；Charles Baudot
    申请人:STMicroelectronics Crolles 2 SAS；
    IPC主号:
    专利说明:

    Integrated photonic device with improved optical coupling
    Embodiments of the invention relate to integrated photonic devices, and in particular the coupling of this type of device with an external optical signal, derived for example but not limited to an optical fiber.
    Conventionally, to couple a photonic integrated circuit to an optical signal coming for example from an optical fiber, an optical coupler is made in the active layer of the integrated circuit making it possible to redirect the light signal in a waveguide made in the structure.
    During coupling, part of the input optical signal passes through the coupler and is not transmitted in the waveguide. There are means for improving the efficiency of the coupling, such as for example optimizing the thickness of the buried insulating layer in the case of silicon-on-insulator substrate (SOI), a well-known Silicon On Insulator. of the skilled person). However, even with optimum thickness, part of the signal is lost.
    Another solution is to place a reflective layer, for example metallic, under the buried layer, so that the rays passing through the coupler are reflected back and forth in the coupler. However, the realization of such a layer requires specific process steps.
    Thus, according to one embodiment, it is proposed here to further reduce the losses of an optical signal arriving on an integrated optical coupler. In this respect, it is advantageously proposed to use not a single integrated circuit but an integrated three-dimensional structure comprising several stacked substrates (forming a monolithic structure), and to make a reflector in one of its substrates, under the optical coupler.
    This has the advantage of limiting the losses of the optical signal and of making the reflector with existing manufacturing processes, such as etchings and deposition of dielectric material.
    In one aspect, there is provided a three-dimensional photonic integrated structure comprising a first semiconductor substrate incorporating at least one first waveguide, a second semiconductor substrate incorporating at least one second waveguide, and at least one region intermediate between the two substrates and having at least one dielectric layer; the second substrate comprises at least one optical coupler configured to receive a light signal, and the first substrate and said at least one dielectric layer comprise a reflector element situated opposite said at least one lattice coupler and capable of reflecting at least a part of said light signal. The reflective element comprises for example a portion of the first semiconductor substrate and a portion of said dielectric material layer.
    Thus, by producing the reflector element in a substrate comprising other photonic components, a specific process step is dispensed with to obtain the optical reflector.
    According to one embodiment, the intermediate region may further comprise at least one additional semiconductor layer embedded in the dielectric layer and located opposite the optical coupler, the reflector element further comprising said additional layer.
    Preferably, the product of the thickness of the portion of the first semiconductor substrate by its refractive index and the product of the thickness of the portion of said dielectric material layer by its refractive index are both approximately equal to the quarter of the wavelength of the light signal.
    The first substrate and the second substrate may be semiconductor films located on insulating layers, thus forming silicon-on-insulator substrates. In this case, the intermediate region advantageously comprises the buried insulating layer on which the second substrate is located.
    According to one embodiment, at least a portion of the reflective element, for example said portion of the first substrate, has a thickness less than or equal to the thickness of the first substrate. Thus, said portion can be etched or left as it is.
    In particular, the thickness of said portion of the first semiconductor substrate may correspond to the thickness of other photonic components made in the first semiconductor substrate.
    The optical coupler may be of single polarization type, and in this case be coupled to a single waveguide or polarization separation type and then be coupled to a plurality of waveguides. Other advantages and features of the invention will become apparent on examining embodiments of the invention, in no way limiting, and the accompanying drawings in which: - Figures 1 to 5 show embodiments of the invention.
    FIG. 1 illustrates a monolithic photon structure SPM according to one embodiment of the invention.
    The SPM photonic structure comprises a carrier substrate 1, on which two silicon-on-insulator substrates 2 and 3 separated by an intermediate region INT are formed and in which several photonic components are made.
    The structure also includes an interconnection region (BEOL, "Back End Of Line" according to the acronym well known to those skilled in the art) not shown here for simplification purposes.
    On the upper face of the SPM structure can be fixed for example an optical fiber, delivering an incident optical signal L1 whose wavelength is for example close to one thousand three hundred ten nanometers.
    Here, the input optical signal arrives on the structure with a low angle par, for example between eight and thirteen degrees.
    The first SOI-type substrate 2 comprises a first substrate proper, or semiconductor film 22, and a first buried insulating layer 21 (known to those skilled in the art under the acronym "BOX", for Buried Oxide ), here a layer of silicon dioxide conventionally having a thickness of seven hundred nanometers.
    The first buried insulating layer 21 is located here under the first semiconductor film 22, having here for example a thickness of three hundred nanometers.
    Several photonic components are made by etching in the first silicon film 22, then embedded in a first layer of dielectric material 23, here silicon dioxide, so that the assembly formed by the first silicon film 22 and the first dielectric layer 23 is four hundred and fifty nanometers thick.
    The first substrate 22 comprises in particular a first waveguide 24 and a set of active components, including for example a photodetector 25.
    The second SOI substrate 3, made directly above the dielectric material layer 23 by molecular bonding, comprises a second buried insulating layer 31 of a thickness, for example equal to one hundred nanometers, forming with the dielectric material layer 23 the intermediate region INT, and on which is the second substrate itself, or second semiconductor film 32, for example silicon.
    The second substrate 3 comprises photonic components etched in the second semiconductor film 32 and embedded in a second layer of dielectric material 33. Here, the components include in particular a second waveguide 34 optically coupled to a network coupler 36.
    The SPM structure also comprises a reflector element 26, here a Bragg mirror conventionally formed by several layers having different refractive indices.
    In this example, the Bragg mirror 26 comprises two stacked layers, including a first layer formed by a portion 220 of the first silicon film 22, and a second layer formed by the stack of a portion 230 of the first dielectric layer 23. and a portion 310 of the second buried insulating layer 31 of the second substrate 3.
    The thicknesses of the two layers of the Bragg mirror 26 are chosen here so that the product of the thickness of each layer by the refractive index of the material that composes it is at most a quarter of the wavelength. the incident signal Ll. This feature makes it possible to further increase the efficiency of the mirror 26. However, this value is only indicative, and the result of the product can be adapted so as to be more or less close to this value as a function of the thickness of the first buried insulating layer 21.
    Here, the thickness of the portion 220 of the first substrate 22 is the same as the thickness of the components of the first substrate, in particular the first waveguide 24 and the photodiode 25. Thus, the realization of the Bragg mirror 26 does not requires no specific process step.
    It should be noted that the drawings presented here are simplified sectional views of embodiments of the invention. Thus, although the second waveguide 34 and the optical coupler 36 are represented in the same sectional plane, they can actually be in separate planes and / or be oriented in different directions.
    As illustrated in FIG. 2, the network coupler 36 is a single-polarization type coupler, that is to say that a light signal L2 coming from the coupler and entering the second waveguide 34 is polarized according to a single state of polarization, for example here a transverse electric polarization, that is to say a polarization in which the component of the electric field of the light wave is perpendicular to the plane of incidence (also known by the man of the trade under the name "polarization s").
    The network coupler 36 is made above the Bragg mirror 26. As a result, a large part of the incident rays passing through the coupler 36 arrive on the mirror 26 in order to be reflected towards the coupler 36 and coupled to the waveguide. 34. Thus, the signal losses due to the coupling are reduced. For a wavelength close to one thousand three hundred and ten nanometers, such a mirror has a reflectivity of 90%, for an incident wave L1 in transverse electric mode (TE, according to the acronym well known to those skilled in the art), arriving at an angle at an angle Θ of 13 °.
    The second waveguide 34 has a portion made above the first waveguide 24, and having the same dimensions. Thus, these two parallel portions of the first and second waveguides form an adiabatic coupler allowing light transfer from the second waveguide to the first waveguide.
    Figure 3 illustrates an embodiment in which the first portion 220 of the first semiconductor film 22 has been further etched so as to make it less thick. This thickness may, for example and advantageously, correspond to the silicon thickness of certain semiconductor portions of photonic components etched in the first semiconductor film 22, so that the same etching step can serve to form these components. Photonics and the Bragg mirror 26.
    Thus, the Bragg mirror is here formed by the first portion 220 of the first silicon film 22 having in this example a thickness of one hundred and fifty nanometers, by the first portion 230 of the dielectric material layer 23, thus having a thickness of three hundred nanometers, and a portion 310 of the buried insulating layer 31 of the second substrate 3, a thickness of one hundred nanometers.
    Thus, the Bragg mirror is optimized to reflect an incident signal Ll 'here having a wavelength close to one thousand five hundred and fifty nanometers. For this wavelength, such a mirror has a reflectivity of 80%, for an incident wave Ll 'in transverse electric mode, arriving at an angle angle Θ of 13 °.
    FIG. 4 illustrates another embodiment of the invention, in which the intermediate region INT comprises an additional silicon layer 27, for example made of polycrystalline silicon or of amorphous silicon, with a thickness of one hundred and fifty nanometers, carried out above of the first silicon film 22 to further improve the reflectivity of the Bragg mirror 26.
    Here, the portion 220 of the first silicon layer has been etched so as to have a thickness of one hundred and fifty nanometers. It has been covered with a first portion 231 of the first layer of dielectric material 23, which has been flattened before the deposition and etching of the additional silicon layer 27, which has itself been covered with a second portion 232 of the first layer of dielectric material 23.
    Thus, in this example, the Bragg mirror comprises four layers: the first portion 220 of the first silicon film 22, having a thickness of one hundred and fifty nanometers, a first portion 231 of the first layer of dielectric material, here a thickness of one hundred fifty nanometers, - the additional silicon layer 27, and - the stack of a second portion 232 of the first layer of dielectric material 23, of a thickness of fifty nanometers and a portion 310 of the buried insulating layer 31 of the second substrate 3, of a thickness of one hundred nanometers.
    Thus, it is particularly advantageous that the two thicknesses of the pairs of silicon and silicon dioxide layers are identical, which makes it possible to have improved reflectivity. However, it would be possible to envisage a mirror having different layer thicknesses.
    As illustrated in FIG. 5, the network coupler is in this example a polarization splitter type coupler (PSGC) according to the Anglo-Saxon acronym well known to those skilled in the art). However, this embodiment is compatible with a single polarization coupler.
    Thus, a light signal L1 passing through the coupler 36 will be separated into two sub-signals of distinct polarizations. For example, a first sub-signal L3 here will be transversely electric polarized and directed in the second waveguide 34, and a second sub-signal L4 will be directed in a third waveguide 37 and transversely polarized magnetic (or polarization p), that is to say a polarization in which the component of the magnetic field of the light wave is perpendicular to the plane of incidence.
    It should be noted that the embodiments presented here are by no means limiting. In particular, although a Bragg reflector having a thickness of five hundred and fifty nanometers has been presented, it is quite possible to envisage a reflector having a different thickness, preferably but not exclusively, with layers whose product of the thickness by the refractive index is close to a quarter of the wavelength of the incident signal. It is the same for the number of layers of the mirror which can vary from the examples illustrated in Figures 1, 3 and 4.
    权利要求:
    Claims (9)
    [1" id="c-fr-0001]
    A three-dimensional photonic integrated structure comprising a first semiconductor substrate (22) incorporating at least one first waveguide (24), a second semiconductor substrate (32) incorporating at least one second waveguide (34) , and at least one intermediate region (INT) situated between the two substrates (22, 32) and comprising at least one dielectric layer (23), the second substrate (32) comprising at least one optical coupler (36) configured to receive a light signal (L1), and the first substrate (22) and said at least one dielectric layer (23) having a reflector element (26) located below and facing said at least one lattice coupler (36) and able to reflect at least a part of said light signal (Ll).
    [2" id="c-fr-0002]
    2. Structure according to claim 1, wherein the reflector element (26) comprises a portion (220) of the first semiconductor substrate (22) and a portion (230) of said layer (23) of dielectric material.
    [3" id="c-fr-0003]
    3. Structure according to claim 2, wherein the product of the thickness of the portion of the first semiconductor substrate (220) by its refractive index and the product of the thickness of the portion (230) of said layer of dielectric material by its refractive index are both approximately equal to one quarter of the wavelength of the light signal (L1)
    [4" id="c-fr-0004]
    4. Structure according to one of claims 1 to 3, wherein the intermediate region (INT) further comprises at least one additional semiconductor layer (27) embedded in the dielectric layer (23) and located opposite the optical coupler (36), the reflector element (26) further comprising said additional layer (27).
    [5" id="c-fr-0005]
    The structure of any one of claims 1 to 4, wherein the first substrate (22) and the second substrate (32) are semiconductor films on insulating layers, and the intermediate region (INT) comprises the insulating layer (31) on which is located the second semiconductor film (32).
    [6" id="c-fr-0006]
    6. Structure according to any one of claims 1 to 5 wherein at least a portion of the reflector element (26) has a thickness less than or equal to the thickness of the first substrate (22).
    [7" id="c-fr-0007]
    The structure of claim 6, wherein the thickness of said portion (220) of the first semiconductor substrate (22) corresponds to the thickness of other photonic components made in the first semiconductor substrate.
    [8" id="c-fr-0008]
    The structure of any one of claims 1 to 7, wherein the optical coupler (36) is a single-polarized array coupler and is coupled to a single waveguide (34).
    [9" id="c-fr-0009]
    The structure of any one of claims 1 to 7, wherein the optical coupler (36) is a polarization-splitting array coupler and is coupled to a plurality of waveguides (34,37).
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    法律状态:
    2017-04-20| PLFP| Fee payment|Year of fee payment: 2 |
    2017-11-24| PLSC| Publication of the preliminary search report|Effective date: 20171124 |
    2018-04-23| PLFP| Fee payment|Year of fee payment: 3 |
    2019-04-19| PLFP| Fee payment|Year of fee payment: 4 |
    2020-04-22| PLFP| Fee payment|Year of fee payment: 5 |
    2022-02-11| ST| Notification of lapse|Effective date: 20220105 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1654523|2016-05-20|
    FR1654523A|FR3051561B1|2016-05-20|2016-05-20|INTEGRATED PHOTONIC DEVICE WITH ENHANCED OPTICAL COUPLING|FR1654523A| FR3051561B1|2016-05-20|2016-05-20|INTEGRATED PHOTONIC DEVICE WITH ENHANCED OPTICAL COUPLING|
    US15/377,848| US10126497B2|2016-05-20|2016-12-13|Integrated photonic device with improved optical coupling|
    US16/156,601| US10656331B2|2016-05-20|2018-10-10|Integrated photonic device with improved optical coupling|
    US16/847,189| US11231548B2|2016-05-20|2020-04-13|Integrated photonic device with improved optical coupling|
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