• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    This method relates to the protection against moisture of a device comprising a first and a second electronic component (10a, 10b) respectively having two facing surfaces, said surfaces: - being separated by a non-zero distance and less than 10 micrometers; having an area greater than 100 mm 2; - being connected by a set of electrical interconnect elements (16) spaced apart from each other by an empty space of material, This method comprises applying a deposit of atomic thin layers to the device so as to form a layer (34) mineral material covering at least said interconnecting elements, the mineral material layer having a water vapor permeance less than or equal to 10-3 g / m2 / day.
    公开号:FR3047604A1
    申请号:FR1650873
    申请日:2016-02-04
    公开日:2017-08-11
    发明作者:Francois Marion；Tony Maindron
    申请人:Commissariat a lEnergie Atomique CEA；Thales SA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    Hybrid electronic device protected against moisture and method of
    PROTECTION AGAINST MOISTURE OF A HYBRID ELECTRONIC DEVICE
    Field of the invention
    The present invention relates to the reliability of connections between two assembled components. The invention is more particularly applicable in the assembly of two electronic components according to the so-called "face-to-face" technique, better known by the Anglo-Saxon "flip chip", which provides vertical interconnections between the two components. The invention thus finds particular application in assemblies known as "chip on chip", "chip on wafer" and "wafer on wafer". The invention is advantageously applicable to devices requiring interconnections of metal units with very small steps, in particular for the production of imagers of very large dimensions and with very small steps, such as, for example, large heterogeneous detection matrices comprising a a large number of connections, temperature-sensitive and cold-hybridized detection matrices, or detection matrices sensitive to mechanical stresses. The invention also applies advantageously to structures called "3D", which comprise a stack of circuits made of different materials and therefore sensitive to thermal stresses. The invention is also particularly applicable to high sensitivity detectors capable of detecting a limited number of photons, in particular a single photon. The invention is also applicable to the cold hybridization of components.
    STATE OF THE ART The assembly of two electronic components by the so-called "flip chip" technique, for example by thermocompression, usually consists in forming electrically conductive solder balls on one face of a first electronic component and on a face of a second component according to a predetermined connection pattern. The first component is then transferred to the second component so as to match the respective solder balls thereof, then the assembly is pressed and heated. The contacted beads deform and melt to form electrical interconnections perpendicular to the main plane of the electronic components, usually in the form of a wafer.
    It is thus generally obtained a device comprising two electronic components separated by a distance of between 1 micrometer and 10 micrometers, the facing area of which is greater than 100 mm 2 (for example two square surfaces of 10 millimeters on the side opposite the one of the other). Usually, the surface density of interconnections is between 1010 / m2 and 1012 / m2.
    A problem with this type of assembly is that the vertical interconnections obtained by the hybridization are sensitive to thermal stresses, especially since the first and second components consist of different materials. Indeed, the components most often have different coefficients of thermal expansion, so that under the effect of a temperature variation, the interconnections are subjected to a shear which weakens and breaks them.
    In order to increase the thermo-mechanical reliability of a hybrid assembly and to provide interconnection protection against the environment, it is generally intended to fill the space between the two components by a layer of resin, known as resin "coating" or "underfill", the action of filling this space being known as underfilling. The shearing forces are thus distributed over the entire layer separating the two hybridized components, and no longer only on the interconnections, the latter thus being effectively protected. This is called "coated flip-chip". For example, reference can be made to the document "Underfill material selection for flip chip technology" by Diana C. Chiang, Thesis (S.M.), Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.
    Two volume-filling techniques separating the two hybridized components by solder balls are known: the first is known under the term "fast flow", and the second is known under the term "no-flow". These techniques are for example described in the document "Characterization of a No-Flow Underfill Encapsulant During the Solder Reflow Process", C.P. Wong et al., Proceedings of the Electronic Components and Technoloy Conference, 1998, pages 1253-1259.
    A "flip-chip" assembly followed by a "fast flow" coating is now described in relation with FIGS. 1 to 4.
    In a first step (FIG. 1), a first electronic component 10a provided with solder balls 12a on one of its faces 14a is aligned with a second electronic component 10b, also provided with solder balls 12b on one of its faces 14b. Pressure is then exerted on the second component according to the illustrated arrows further raising the temperature of the assembly to a temperature greater than or equal to the melting temperature of the constituent metal of the balls 12a, 12b. The balls 12a, 12b then solidify with each other by thermocompression to form interconnections 16 (Figure 2). In a subsequent step (FIG. 3), usually following the application of a deoxidation flow to clean the interconnections 16, an electrically insulating liquid resin 18 is deposited using a distributor 20 on the face 14a of the first component 10a. The resin 18 then migrates by capillary action in the volume separating the surfaces facing the parallel faces 14a, 14b and ends up completely filling this volume 20, thus drowning the electrical interconnections 16 (FIG. 4). The resin 18 is then solidified, usually by applying a heat treatment, or "curing". A final step of connecting the hybridized device with external elements (not shown) is then implemented (FIG. 5), for example by connecting connection pads 22, provided for this purpose on the first component 10a, by wires 24. (so-called "wire-bonding" connections).
    As is known per se, the resin is a mixture of a glue as a main component, for example an epoxy glue, and a solvent which makes it possible to adjust the viscosity of the resin and which is evaporated during the heat treatment. of the resin. The mixture may also comprise curing agents, especially polymerization agents, for example a catalyst, a photoinitiator or a thermo-initiator, and / or surfactants, for example silane, which increases the adhesion and the wettability of the resin on the surfaces of the components with which it comes into contact, and / or particles to adjust the coefficient of thermal expansion of the resin, usually referred to as "fillers".
    The first problem posed by the "flip chip coated" technique is that of the presence of a polymer in the filler resin. However, polymers are inherently "non-hermetic", that is to say that they can not constitute in the long term a barrier against moisture. In addition, their effectiveness against moisture greatly degrades when the device undergoes significant thermal excursions. More particularly, corrosion of the interconnections 16 is observed in the presence of adsorbed moisture. Indeed, the interconnections generally consist of a complex stack of metallic materials (welds, intermetallics, bonding metals, barrier metals to the diffusion of welds, etc ...), so that these structures have chemical potentials. conducive to accelerated corrosion in the presence of moisture.
    Furthermore, the moisture involves the swelling of the coating resins after absorption of moisture, which induces mechanical forces tending to separate the components and leading to the premature rupture of the interconnections 16.
    Thus, the only coating material of the state of the art does not allow good resistance to climatic stresses.
    Expose the invention
    The object of the present invention is to provide increased moisture resistance interconnections connecting two components reported on one another, particularly in the context of a hybridization type "flip-chip". To this end, the subject of the invention is a method for protecting against moisture a device comprising a first and a second electronic component respectively having two facing surfaces, said surfaces being separated by a non-zero distance and less than 10 micrometers; having an area greater than 100 mm2; and being connected by a set of electrical interconnection elements spaced from each other by an empty space of material.
    According to the invention, the method comprises applying a deposit of atomic thin layers to the device so as to form a layer of mineral material covering at least said interconnection elements, the layer of mineral material having a vapor permeability less than or equal to 10'3 g / m2 / day.
    For the purposes of the invention, inorganic material is understood to mean inorganic or ceramic materials having ionic bonds and / or covalent bonds, in particular inorganic materials characterized by their mechanical and thermal resistance (eg refractory materials) and their good barrier quality. water vapor. Among the inorganic materials used as waterproofing electrical interconnections include oxides and / or dielectric nitride, especially those of formulas T1O2, ZrC> 2, SiOx, SiNx, SiOxNy, ZnSe, ZnO, Sb2C> 3, the oxides of aluminum (eg Al2O3), and transparent conductive oxides (or "OTC", eg indium-tin oxide ("ITO") or aluminum-doped zinc oxide ("AZO")).
    In other words, the invention consists in waterproofing the interconnections of two components, for example assembled according to a "flip-chip" technique, this waterproofing occurring after the hybridization but before coating with the resin. The surface of the interconnections is thus covered with a mineral material, and therefore a material which is both non-corrodible by water and which forms an effective barrier to water. In addition, the waterproofing material has a form of adhesion with metals. Finally, since the interconnections are not corroded, they are therefore more resistant to humidity-induced resin swelling.
    In addition, it is considered that conventional vapor deposition techniques (e.g. PVD, CVD, but also ALD) are not suitable for coating interconnections that are located in a volume having a very large aspect ratio. In fact, the interconnections have such a high surface density that there is no "direct" path from the edge of the hybrid device, ie the point of entry of the vapor into the volume between the two components, and the interconnections housed in the heart of the device. In particular, for each of these interconnections, there is a multitude of interconnections that mask the vapor phase. It should also be noted that the coating is always made in the liquid phase, using the capillarity for its progression between the two components. In particular, it has not been proposed in the state of the art to use vapor deposition techniques for coating, even though these techniques are capable of depositing material thicknesses of several tens of micrometers, and therefore much greater thicknesses than the usual distance between the two hybridized components (from lpm to 10 pm). This means that it is considered that the volume between the two components interspersed with a multitude of interconnections is accessible only by capillarity, the vapor phase deposits being instead used to deposit or fill empty cavities of any material which offer direct paths to their walls for the vapor phase.
    However, the inventors have succeeded in depositing a layer of mineral material on interconnections housed in an aspect ratio volume greater than or equal to 103 (this value corresponding, for example, to facing surfaces which are square with a 10 millimeter side and which are spaced 10 microns apart) with surface densities of interconnections greater than 1010 / m 2.
    According to a particular embodiment, the layer of mineral material material has a thickness of between 10 nanometers and 100 nanometers, in particular for a mineral material consisting of alumina (Al2O3). A thickness of 10 nanometers allows a good waterproofing of the interconnections. It is further noted that beyond 100 nm no significant gain in terms of impermeability is obtained.
    According to one embodiment: the application of the deposition of thin atomic layers comprises the placement of the structure in a chamber and the injection into said chamber of reactive gases for the formation of the layer of mineral material; and the injection of the reactive gases is carried out without pumping the enclosure.
    In other words, during the deposition, the enclosure is not traversed by a continuous flow of the precursors used by the ALD deposit, as is conventionally the case of an ALD deposit. Indeed, in this conventional mode of operation with pumping, the species may not have time to diffuse everywhere in the asperities that represent the inter-component volume and interconnections. In addition, there may also exist gas flows disturbed by these asperities (vortex generation for example), giving rise to a non-homogeneous deposited layer, or even to uncovered portions. By stopping the pumping, the species have time to diffuse without producing gas disturbance.
    According to an optional embodiment, the method comprises the deposition of a filling material completely filling the empty space of material separating the facing surfaces of the two components, the deposition of the filling material being carried out after the deposition of the coating layer. mineral material on the interconnecting elements. The invention also relates to a device comprising a first and a second electronic component respectively having two facing surfaces, said surfaces being separated by a non-zero distance and less than 10 micrometers; having an area greater than 100 mm2; being connected by a set of separate electrical interconnection elements.
    According to the invention, this device comprises a layer of mineral material covering at least said interconnection elements, the layer of mineral material having a permeability to water vapor less than or equal to 10'3 g / m2 / day.
    Such a device is much more reliable against corrosion of these interconnections and thus has a longer life.
    According to one embodiment, the inorganic material is selected from the group consisting of compounds of formula SiOx, SiNx, SiOxNy, ZnSe, ZnO, Sb2C> 3, aluminum oxides and transparent conductive oxides (OTC).
    According to one embodiment, the layer of mineral material has a thickness of between 10 nanometers and 100 nanometers.
    According to one embodiment, the device comprises a filling material completely filling the space separating the facing surfaces of the two components.
    BRIEF DESCRIPTION OF THE FIGURES
    The present invention will be better understood on reading the description which will follow, given solely by way of example, and made with reference to the appended drawings, in which identical references designate identical elements, and in which: FIGS. 1 to 5 are diagrammatic sectional views illustrating a method of manufacturing a hybridized device by a technique "flip-chip" according to the state of the art, as discussed above; and FIGS. 6 to 8 are diagrammatic cross-sectional views illustrating a method of manufacturing a hybridized device by a "flip-chip" technique according to the invention, comprising a step of waterproofing the electrical interconnections.
    Detailed description of the invention
    Referring to FIGS. 6 to 8, a method of manufacturing a device 30 comprising two electronic components 10a, 10b, hybridized and having electrical interconnections 16, starts in a manner similar to the state of the art, such as, for example described in connection with FIGS. 1 and 2. This device comprises two electronic components, for example separated by a distance of between 1 micrometer and 10 micrometers, whose facing area is greater than 100 mm 2 (for example two square surfaces of 10 mm side opposite one another), and whose surface density of interconnections is between 10! M and 10 / m.
    Once the hybridization is complete, and before the application of a coating material 18, a step of waterproofing the electrical interconnections 16 by a mineral layer is implemented by means of a deposit "ALD".
    As is known per se, the ALD is an atomic layer deposition technique which consists in successively exposing a surface placed in an enclosure, or "reaction chamber", with different chemical precursors, in order to obtain ultra-thin layers. . The deposition of an atomic layer is usually carried out in 4 steps: a) injection into the chamber of a first gaseous precursor resulting in the formation on the surface of a monolayer consisting of chemisorbed species and other physisorbed species; b) purge the reaction chamber, for example by means of a purge with ultra pure nitrogen to remove all unreacted species and any reaction by-products; c) injecting into the chamber a second gaseous precursor causing the formation of the desired layer of material on the surface; d) purging the chamber to remove unreacted species and any reaction by-products. Conventionally, a pumping of the chamber is implemented during the injection of the precursors to produce a flow of the latter in the enclosure.
    Advantageously, the device 30 is placed in the chamber, in particular on a support 32, and the injection of the precursors is carried out without pumping, so that the precursors bathe the device 30 and diffuse integrally in the volume 20 between the components 10a, 10b without causing gas disturbance. There is thus obtained a layer 34 deposited on the entire exposed surface of the device 30, and therefore on the interconnections 16 (FIG. 6).
    The layer of mineral material deposited by ALD is advantageously an electrically insulating layer, in particular a layer of material of formula TiC 2, ZrO 2, SiO x, SiNx, SiO x N y, ZnSe, ZnO, Sb 2 C 3, aluminum oxides (eg Al 2 O 3 ) and transparent conducting oxides (or "OTC", eg indium-tin oxide ("ITO") or zinc oxide doped with aluminum ("AZO")), in particular of a thickness between 10 nanometers and 100 nanometers. There is thus obtained a layer whose permeability to water vapor is less than or equal to 10 -3 g / m 2 / day.
    Advantageously, a layer of Al 2 O 3, TiO 2 or ZrO 2 is deposited. These materials, in addition to their waterproofing property, have good wettability with the resins usually used for filling, and thus help the progression by capillarity of the resin.
    In a first variant, the layer 34 consists of a single material.
    In a second variant, the layer 34 is a multilayer of different inorganic materials, called nanolaminates, which makes it possible to combine different properties of permeability, or to block gas diffusion paths in a layer by the deposition of a layer of material. different. Advantageously, the layer 34 is a bi-Al 2 O 3 / TiO 2 layer or a Al 2 O 3 / ZrO 2 bilayer. A bilayer notably makes it possible to passivate the layer in contact with the interconnections (e.g. Al203) with a moisture-stable material.
    Due to the insulating nature of the impervious layer 34, the connection pads 22 of the device are not accessible to an electrical connection, in particular by wire-bonding. The method therefore continues with the release of at least one of these connection pads 22, advantageously by the implementation of an isotropic etching, of normal direction to the main plane of the device, as illustrated by the arrows This isotropic etching has the effect of removing impervious layer portions on the upper face of the second component 10b and impervious layer portions 34 of the first component 10a which are not facing the second component 10b, and consequently, the layer portions 34 covering the connection pads 22. The isotropic etching is for example an ionic machining (unidirectional ion bombardment), an isotropic plasma etch, etc. If necessary, the lateral edges 36 of the device are also released, for example by tilting the device 30 during the isotropic attack, while preventing the attack from reaching the interconnections 16.
    Once the interconnections 16 have been waterproofed, the manufacturing process is continued in a conventional manner by filling the inter-component volume with resin 18 and connecting the zones 22, for example as described with reference to FIGS. 3 to 5. There is thus obtained a hybridized device, whose interconnections are coated by an impervious layer 34 and whose volume 20 between the electronic components 10a and 10b is filled with resin 18 (Figure 8). As a numerical example, the waterproofing process has been tested on the display of a projector comprising a matrix of 1746 × 1000 pixels (and therefore as many interconnections) at a pitch of 10 microns, hybridized on a CMOS control matrix. provided with micro-tubes coated with a gold layer and respectively inserted into the indium balls of the matrix of pixels, the interconnections being constituted by micro-tubes inserted in balls. The size of the active matrix is thus 17.46 mm by 10 mm and the matrix of pixels is spaced from the control matrix by a distance of 5 micrometers. Such hybridization is described for example in the documents WO 2009/115686 and US 2011/0094789. Thanks to the invention, a layer of 25 nanometers of Al 2 O 3 was deposited by ALD on each of the interconnections, the process ending in the coating by capillarity with the aid of a resin such as "Epotek 353ND © © Epoxy Technology Inc., USA. In view of the foregoing, it is understood that the invention applies to any type of hybridization "flip-chip" (thermocompression of balls, insertion of male elements in female elements, insertion of solid or hollow elements in balls of lower ductility, insertion at ambient temperature or not, etc ...).
    Similarly, the invention applies to any device having two components facing each other and connected by interconnections, electrical or otherwise, the device was obtained by hybridization "flip-chip" or not.
    Likewise, although a final underfilling step has been described, the invention also covers devices which do not have such a coating.
    权利要求:
    Claims (9)
    [1" id="c-fr-0001]
    1. A method of protection against moisture of a device comprising a first and a second electronic components (10a, 10b) respectively having two facing surfaces, said surfaces being separated by a non-zero distance and less than 10 micrometers; having an area greater than 100 mm2; being connected by a set of electrical interconnection elements (16) spaced from each other by an empty space of material, characterized in that the method comprises applying a deposit of atomic thin layers to the device so as to forming a layer (34) of mineral material covering at least said interconnecting elements, the layer of mineral material having a water vapor permeability less than or equal to 10'3 g / m2 / day.
    [2" id="c-fr-0002]
    2. Method according to claim 1, characterized in that the inorganic material is selected from the group consisting of compounds of formula T1O2, ZrCh, SiOx, SiNx, SiOxNy, ZnSe, ZnO, SbiCri, aluminum oxides and oxides transparent conductors (OTC).
    [3" id="c-fr-0003]
    3. Method according to claim 1 or 2, characterized in that the layer of mineral material material has a thickness of between 10 nanometers and 100 nanometers.
    [4" id="c-fr-0004]
    4. Method according to any one of the preceding claims, characterized in that the application of the deposition of thin atomic layers comprises the placement of the structure in a chamber and the injection into said chamber of reactive gases for the formation of the layer of mineral material; and in that the injection of the reactive gases is carried out without pumping the enclosure.
    [5" id="c-fr-0005]
    5. Method according to any one of the preceding claims, characterized in that it comprises the deposition of a filling material completely filling the empty space of material separating the surfaces facing the two components, the deposition of the filling material. being performed after the deposition of the layer of mineral material on the interconnection elements.
    [6" id="c-fr-0006]
    6. Device comprising a first and a second electronic components respectively having two facing surfaces, said surfaces being separated by a non-zero distance and less than 10 micrometers; having an area greater than 100 mm2; being connected by a set of separate electrical interconnection elements, characterized in that it comprises a layer of mineral material covering at least said interconnecting elements, the layer of mineral material having a lower water vapor permeability or equal to 10'3 g / m2 / day.
    [7" id="c-fr-0007]
    7. Device according to claim 6, characterized in that the inorganic material is selected from the group consisting of compounds of formula TiC> 2, ZrC> 2, SiOx, SiNx, SiOxNy, ZnSe, ZnO, Sb2C> 3, the oxides of aluminum and transparent conductive oxides (OTC).
    [8" id="c-fr-0008]
    8. Device according to claim 6 or 7, characterized in that the layer of mineral material has a thickness of between 10 nanometers and 100 nanometers.
    [9" id="c-fr-0009]
    9. Device according to any one of claims 6 to 8, characterized in that it comprises a filling material completely filling the space between the facing surfaces of the two components.
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    同族专利:
    公开号 | 公开日
    KR20170093069A|2017-08-14|
    EP3203511A1|2017-08-09|
    US20170229321A1|2017-08-10|
    FR3047604B1|2018-02-02|
    EP3203511B1|2020-01-29|
    JP2017139461A|2017-08-10|
    US9793141B2|2017-10-17|
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    法律状态:
    2017-02-28| PLFP| Fee payment|Year of fee payment: 2 |
    2017-08-11| PLSC| Publication of the preliminary search report|Effective date: 20170811 |
    2018-02-26| PLFP| Fee payment|Year of fee payment: 3 |
    2020-02-28| PLFP| Fee payment|Year of fee payment: 5 |
    2021-02-26| PLFP| Fee payment|Year of fee payment: 6 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1650873A|FR3047604B1|2016-02-04|2016-02-04|HUMIDITY PROTECTED HYBRID ELECTRONIC DEVICE AND HUMIDITY PROTECTION METHOD OF HYBRID ELECTRONIC DEVICE|
    FR1650873|2016-02-04|FR1650873A| FR3047604B1|2016-02-04|2016-02-04|HUMIDITY PROTECTED HYBRID ELECTRONIC DEVICE AND HUMIDITY PROTECTION METHOD OF HYBRID ELECTRONIC DEVICE|
    US15/419,576| US9793141B2|2016-02-04|2017-01-30|Hybrid electronic device protected against humidity and method of protecting a hybrid electronic device against humidity|
    JP2017013825A| JP2017139461A|2016-02-04|2017-01-30|Hybrid electronic device protected against humidity and method of protecting hybrid electronic device against humidity|
    EP17153660.0A| EP3203511B1|2016-02-04|2017-01-30|Method for protecting a hybrid electronic device against moisture|
    KR1020170013682A| KR20170093069A|2016-02-04|2017-01-31|Hybrid electronic device protected against humidity and method of protecting a hybrid electronic device against humidity|
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