法国专利FR3046298A1 OPTOELECTRONIC LIGHT EMISSION DEVICE

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专利摘要:
The invention relates to an optoelectronic light emitting device (1) comprising: at least one light-emitting diode (40) having an emission surface (44) capable of emitting a so-called excitation light radiation; and - a photoluminescent material (31) which covers the emission surface (44), the photoluminescent material comprising photoluminescent particles adapted to at least partially convert said excitation light radiation through the emission surface (44) in a light radiation called photoluminescence. The optoelectronic device comprises at least one photodiode (50), adjacent to the light-emitting diode (40), having a receiving surface (54) coated with the photoluminescent material (31), and adapted to detect at least a portion of the radiation of excitation and / or photoluminescence radiation from the photoluminescent material (31) through the receiving surface.
公开号:FR3046298A1
申请号:FR1563251
申请日:2015-12-23
公开日:2017-06-30
发明作者:Ivan-Christophe Robin；Hubert Bono；Yohan Desieres
申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
IPC主号:

专利说明:

TECHNICAL FIELD The invention relates to an optoelectronic light emitting device comprising at least one light emitting diode coated with a photoluminescent particle material. The invention finds application particularly in lighting systems which it is desired to control or adjust the emission spectrum associated with light emitting diodes.
STATE OF THE PRIOR ART
There are optoelectronic devices including light-emitting diodes whose emission surface is covered by a photoluminescent material. This is particularly the case of lighting systems emitting a white light.
The light-emitting diodes are formed of a stack of semiconductor layers adapted to emit light radiation, for example blue or ultraviolet. The semiconductor layers are generally made based on a material comprising elements of column III and of column V of the periodic table, such as a III-N compound, in particular gallium nitride (GaN), nitride indium and gallium (InGaN) or aluminum and gallium nitride (AIGaN).
According to the desired characteristics of the emission spectrum of the optoelectronic device, a layer of photoluminescent material covers the emission surface of the light-emitting diode, the photoluminescent material being adapted to convert at least a portion of the so-called excitation light radiation emitted by the light-emitting diode, in a light radiation called photoluminescence of greater wavelength. The photoluminescent material may comprise particles dispersed in a binding matrix, for example particles of yttrium garnet and aluminum activated by the cerium ion, called YAG: Ce.
However, there is a need to control the characteristics of the emission spectrum of the optoelectronic device and in particular that associated with the light emitting diode itself. There is also a need for an optoelectronic device having a monolithic structure which allows a high density of light-emitting diodes.
DISCLOSURE OF THE INVENTION The object of the invention is to remedy at least in part the disadvantages of the prior art, and more particularly to propose an optoelectronic light emitting device comprising: at least one light emitting diode having a surface emission, able to emit a light radiation said excitation; and a photoluminescent material which covers the emission surface, the photoluminescent material comprising photoluminescent particles adapted to convert at least in part said excitation light radiation through the emission surface into a so-called photoluminescence light radiation.
According to the invention, the optoelectronic device comprises at least one photodiode, adjacent to the light-emitting diode, having a reception surface coated with the photoluminescent material, and adapted to detect at least a portion of the excitation radiation and / or the radiation of photoluminescence from the photoluminescent material through the receiving surface.
Some preferred but non-limiting aspects of this source are the following:
The light-emitting diode and the photodiode may each have a mesa structure, the emission surface and the receiving surface being substantially coplanar.
The light-emitting diode and the photodiode may each comprise a first doped semiconductor portion according to a first conductivity type and a second doped semiconductor portion according to a second conductivity type opposite to the first conductivity type, the first and second semiconductor portions being substantially coplanar respectively. and made of a material of the same composition.
The first doped semiconductor portion of the light emitting diode and that of the photodiode have a side flank having a step surface formed by a second portion of the first semiconductor portion doped with respect to a first portion thereof.
A lateral electrical connection element may extend between the light emitting diode and the adjacent photodiode, so as to be in electrical contact with the step surface of the first doped semiconductor portion, the lateral connection element being further electrically isolated from the second doped semiconductor portion and active regions located between the first and second semiconductor portions doped with dielectric portions covering lateral flanks of the mesa structures.
The light-emitting diode and the photodiode may each comprise an active zone located between the first and second doped semiconductor portions, the active areas being substantially coplanar and made of a material of the same composition.
The active zones of the light emitting diode and the photodiode may each comprise at least one first quantum well, said first quantum well of the active zone of the light emitting diode being adapted to emit the excitation light radiation at a so-called wavelength. excitation.
The active areas of the light emitting diode and the photodiode may each comprise at least one second quantum well, said quantum well of the active zone of the photodiode being adapted to detect the photoluminescence light radiation.
The second quantum well may be located between a first N-type doped semiconductor portion and the first quantum well.
An optical filter may be disposed between the photoluminescent material and the photodiode receiving surface, the filter being adapted to transmit the photoluminescence radiation and to block transmission of the excitation radiation.
The optoelectronic device may further comprise a control device adapted to modify the excitation light radiation emitted by the light emitting diode from a light detection signal detected by the photodiode. The invention also relates to a method of manufacturing an optoelectronic light emitting device according to any one of the preceding claims, wherein: i) at least one light emitting diode having a transmitting surface and adapted to emit a light radiation said excitation, and at least one adjacent photodiode having a receiving surface; ii) covering the emission and reception surfaces of a photoluminescent material comprising photoluminescent particles adapted to convert at least in part said excitation light radiation through the emission surface into a so-called photoluminescence light radiation. Step i) can comprise the substeps in which: a. a layer stack comprising a first doped semiconductor layer and a second doped semiconductor layer between which an active layer having at least one quantum well is interposed; b. the stack of layers is etched to form a mesa structure for forming a light-emitting diode and a mesa structure for forming an adjacent photodiode, each mesa structure being formed of a stack of a first doped semiconductor portion, an active region and a second doped semiconductor portion, the first doped semiconductor portion of said mesa structures having a lateral flank having a step surface; vs. dielectric portions covering the lateral flanks of the mesa structures are produced with the exception of the offset surfaces; d. an electrically conductive material is deposited between the mesa structures, the conductive material being in contact with the step-off surface of the first doped semiconductor portion and electrically isolated by the dielectric portions of the zone and the second doped semiconductor portion.
Electrical connection elements adapted to directly bias the light emitting diode and indirectly the photodiode from electrically conductive polarization portions located on a face opposite the photoluminescent material can be made.
BRIEF DESCRIPTION OF THE DRAWINGS Other aspects, objects, advantages and characteristics of the invention will appear better on reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made in FIG. 1a is a diagrammatic cross-sectional view of an optoelectronic light-emitting device according to an embodiment in which the cover comprises photoluminescent blocks, and FIG. 1b is a variant in which FIG. hood has a photoluminescent layer; FIG. 2a is a schematic sectional view of an optoelectronic light emission device according to another embodiment adapted to detect photoluminescence radiation, and FIG. 2b is a detailed view of the stack of semiconductor portions of the electroluminescent diode and the adjacent photodiode of such an optoelectronic device; Figures 3a to 3h illustrate the steps of a method of producing an optoelectronic device according to another embodiment.
DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
In the figures and in the remainder of the description, the same references represent identical or similar elements. In addition, the various elements are not represented on the scale so as to favor the clarity of the figures. In addition, the terms "substantially", "approximately", "approximately" extend to "within 10%". An optoelectronic device having at least one light emitting diode and a photodiode disposed adjacent thereto, the emitting surface of the light emitting diode and the receiving surface of the photodiode being coated with a photoluminescent material comprising photoluminescent particles. The photodiode is adjacent to the light-emitting diode insofar as it is on the same side and in the vicinity thereof with respect to the photoluminescent material.
The emission surface is a surface of the light-emitting diode through which a so-called excitation light radiation is emitted. The receiving surface is a surface of the photodiode through which incident light radiation is received and detected by the photodiode.
The photoluminescent material is a material adapted to at least partially convert an incident light radiation, emitted by the light emitting diode, into a so-called photoluminescence light radiation of a different wavelength. The particles are elements of a photoluminescent material, distinct from one another, whose shape can be arbitrary, for example spherical, angular, flattened or elongated, or any other shape. The size of the particles is here the smallest dimension of the particles and the average size is the arithmetic average of the particle size.
Figure la is a schematic sectional view of an optoelectronic light emitting device according to one embodiment.
For the rest of the description, a three-dimensional orthonormal coordinate system (Χ, Υ, Ζ) is defined here, in which the plane (X, Y) is substantially parallel to the plane of the transmission and reception surfaces, and the Z axis is oriented in a direction orthogonal to the transmitting and receiving surfaces.
The optoelectronic device 1 comprises here: a. a first printed circuit chip 10, called an optoelectronic chip, comprising at least one light emitting diode 40 and a photodiode 50 disposed adjacent thereto. The optoelectronic chip 10 here comprises a matrix of light-emitting diodes 40 defining a matrix of light pixels, at least a portion of the pixels of which comprises a photodiode 50. b. a second printed circuit chip 20, called a control chip, disposed on a so-called rear face 11b of the electronic chip 10. The control chip 20 has connection elements for biasing the light-emitting diodes 40 and the photodiodes 50. c. a cover 30 disposed on a so-called front face 11a of the optoelectronic chip 10, opposite to the rear face 11b, and comprising the photoluminescent particle material.
The optoelectronic chip 10 comprises a plurality of light-emitting diodes 40 and photodiodes 50 each formed of a stack of first and second doped semiconductor portions, between which is an active area. The active area is the region of a diode where light radiation is emitted (in the case of a light emitting diode) or detected (in the case of a photodiode).
Light-emitting diodes 40 and photodiodes 50 form mesa structures substantially coplanar with each other. By mesa structure is meant a structure formed of a stack of substantially planar layers or semiconductor portions whose active area is projecting above a growth substrate following an etching step. The structure of the light-emitting diodes and photodiodes may be the same or similar to the structure described in Fan et al titled III-nitride micro-emitter arrays development and applications, J. Phys. D: Appl. Phys. 41 (2008) 094001. Alternatively, and preferably, it may be identical or similar to the structure described in the patent application FR1456085 filed on 27/06/2014, the text of which is considered to be an integral part of the present description. . The mesa structures are substantially coplanar in the sense that the semiconductor portions of the light emitting diodes and those of the photodiodes are mutually coplanar.
The light-emitting diode 40 comprises a stack formed of a first semiconductor portion 41 doped with a first type of conductivity, for example of N type, and of a second semiconductor portion 42 doped with a second type of conductivity opposite to the first type. , for example P type between which is interposed an active zone 43 so-called emissive at which is generated the light radiation of the diode. One face of the first N-doped portion 41, opposite to the active zone 43, forms a transmission surface 44 through which the emitted light radiation is emitted.
The photodiode 50 comprises a stack formed of a first semiconductor portion 51 doped with a first type of conductivity, for example of N type, and of a second semiconductor portion 52 doped with a second type of conductivity opposite to the first type, for example of type P, between which is interposed a so-called active detection zone 53 at which incident incident light radiation is detected. One face of the first N-doped portion 51, opposite to the active area 53, forms a receiving surface 54 through which incident light radiation is received.
In this example, each semiconductor portion 41, 42, 43 of the light-emitting diodes 40 is respectively coplanar with that 51, 52, 53 of the photodiodes 50, and have a substantially identical thickness and composition. More precisely, the first N-doped portions 41 of the light-emitting diodes 40 are coplanar with those 51 of the photodiodes 50, and have a substantially identical thickness and composition. Materials of the same composition are materials made of elements of the periodic table in an identical proportion. It is the same for the P-doped portions 42, 52 and for the active areas 43, 53. Thus, the thicknesses of the light-emitting diodes and photodiodes are substantially identical. On the other hand, the emitting surface 44 and the receiving surface 54 are substantially coplanar. Each light-emitting diode 40 and photodiode 50 further comprises an electrically conductive portion 45, 55 in contact with a face of the second portion 42, 52 doped (here P type) opposite the active zone 43, 53. The thickness of the conductive portion 45, 55 may be between 3 nm and 500 nm. The conductive portions 45, 55 are preferably substantially coplanar.
Each light-emitting diode 40 and photodiode 50 has a structuring of the first N-doped portion 41, 51 forming a setback at a lateral flank resulting in an enlargement of the lateral dimensions in the (X, Y) plane. More specifically, each first portion 41, 51 doped N comprises a first portion 41a, 51a, located between the active zone 43, 53 and a second portion 41b, 51b, whose lateral dimensions are substantially identical to those of the active zone 43, 53. It also comprises a second part 41b, 51b, the face opposite to the first part 41a, 51a forms the emission surface 44 or reception 54, whose lateral dimensions are greater than those of the first part 41a, 51a at a lateral flank. Thus, the first portion 41, 51 doped N of the diodes 40, 50 has a recess surface 46, 56 which extends substantially orthogonal to the axis Z and which connects the lateral flanks of the first portions 41a, 51a and second Parts 41b, 51b. Furthermore, the active zone 43, 53 and the second portion 42, 52 doped P diodes 40, 50 have lateral flanks which extend continuously along the axis Z. The lateral dimensions of the second portion 41b, 51b of the first portion 41, 51 doped N is at least 1% greater than those of the first portion 41a, 51a. For example, for a width of the first portion 41a, 51a of the N doped portion of 80pm, the width of the second portion 41b, 51b may be 85pm.
The light-emitting diodes 40 and the photodiodes 50 may have a thickness of between 100 nm and 50 μm, the thickness of the first portion 41, 51 doped N may be between 50 nm and 20 μm, that of the active zone 43, 53 may be between 10nm and 500nm, and that of the second portion 42, 52 doped P can be between 50nm and 20pm. The lateral dimensions of the diodes, measured at the emission and reception surfaces, may be between 500 nm and a few millimeters, depending on the intended applications. Preferably, the lateral dimensions of the electroluminescent diodes are greater than those of the photodiodes.
The light-emitting diodes and the photodiodes may be made based on a semiconductor material III-V, that is to say mainly comprising at least one element of the column III and an element of the column V of the periodic table. The diodes may in particular be based on a III-N compound, such as for example GaN, InGaN, AIGaN, AlN, InN, AUnGaN. The active zones may comprise at least one quantum well made based on a semiconductor material having a band gap energy lower than that of the doped portions. For example, the doped portions are made of GaN and the active zone comprises an alternation of intrinsic (unintentionally doped) GaN semiconductor layers and at least one InGaN-based quantum well. The light-emitting diode may be adapted to emit a blue light, that is to say whose emission spectrum has an intensity peak of between 440 nm and 490 nm, and the photodiode is here adapted to detect the blue light emitted by the diode and received through the receiving surface.
The lateral flanks of the diodes are coated with a dielectric portion 47, 57, with the exception of the recess surfaces 46, 56. More specifically, the lateral flanks having no recess are covered in a continuous manner with a dielectric portion 47 , 57. The lateral flanks comprising a recess are coated with a dielectric portion in two parts: a first portion 47a, 57a which covers the lateral flanks of the portion 42, 52 doped P, the active zone 43, 53 and the first portion 41a, 51a of the N-doped portion 41, 51; and a second portion 47b, 57b, distinct from the first, which covers the lateral flanks of the second part 41b, 51b of the portion 41, 51 doped N. Thus, the recess surfaces 46, 56 are not coated with a dielectric portion 47, 57. The dielectric portion 47, 57 further covers the lateral flanks of the conductive portion 45, 55.
The optoelectronic chip further comprises 48.58 electrical connection elements, said side, interposed between the light emitting diodes 40 and adjacent photodiodes 50, which extend between the front faces 11a and rear 11b of the optoelectronic chip. Each light-emitting diode 40 thus has a lateral connection element 48 which extends between the dielectric portion 47a, 47b located at the recess 46 on the one hand, and the dielectric portion 57 of the photodiode 50 facing the other. The lateral connection element 48 is thus electrically isolated from the active zone 43 and the P-doped portion 42 of the light-emitting diode 40 on the one hand, and the photodiode 50 on the other side. However, it is in electrical contact with the N-doped portion 41 of the light-emitting diode 40 at the step surface 46 so as to be able to carry the N-doped portion 41 at a given electrical potential. Similarly, each photodiode 50 comprises a so-called lateral connection element 58 which extends between the dielectric portion 57a, 57b situated at the recess 56 on the one hand, and the dielectric portion 47 of the light-emitting diode 40 opposite each other. The lateral connection element 58 is thus electrically isolated from the active zone 53 and the P-doped portion 52 of the photodiode on the one hand, and from the light-emitting diode 40 on the other hand. However, it is in electrical contact with the N-doped portion 51 of the photodiode at the step surface 56 so as to be able to bring this N-doped portion 51 to a given electrical potential (of sign opposite to that of the element of FIG. lateral connection of the light-emitting diode). It should be noted that the lateral connection elements 48, 58 are electrically isolated from the conductive portions 45, 55 by the dielectric portions 47, 57. The thickness and the material of the dielectric portions 47, 57 are chosen so as to obtain a leakage current. acceptable between the conductive portion and the lateral connection elements. The thickness may be of the order of a few nanometers, for example between 3 nm and 5 nm depending on the dielectric material used.
In this example, the optoelectronic device comprises a dielectric layer 12 (optional) interposed between the light-emitting diodes and photodiodes on the one hand and the cover 30 photoluminescent material on the other hand. It is made of dielectric material, for example S13N4, so as to avoid any short circuit between the diodes and the corresponding lateral connection elements, and can improve the light extraction. The thickness of the dielectric layer 12 is for example between 500nm and 50pm, preferably between Ιμιτι and 5pm. It comprises a front face 12a and an opposite rear face 12b. The light-emitting diodes 40 and the photodiodes 50 are in contact with the rear face 12b of the dielectric layer at the respective transmitting and receiving surfaces. The front face 12a may have raised patterns (not shown) located opposite the emission surfaces so as to improve the extraction of the light radiation emitted by the light emitting diodes, and possibly facing the receiving surfaces.
In this example, the optoelectronic device further comprises an electrical connection layer 13 (optional) interposed between the diodes 40, 50 and the control chip 20, facilitating the electrical connection between the optoelectronic chip and the control chip. The connection layer 13 thus comprises electrical connection elements 14 ensuring the connection between the lateral connection elements 48, 58 with conductive portions 22 of the control chip on the one hand, and connection elements 14 ensuring the connection between the conductive portions 45, 55 with other conductive portions 22 of the control chip. The connection elements 14 are electrically isolated from each other by a dielectric material 15. The coupling layer 13 has a substantially constant thickness, and a face opposite to the diodes forms the rear face 11b of the optoelectronic chip.
The optoelectronic light emitting device further comprises a control chip 20 assembled to the optoelectronic chip at the rear face 11b. The control chip provides in particular the electrical connection of the diodes 40, 50 so as to ensure the light emission by the light-emitting diodes and the detection by the photodiodes. Thus, the conductive portions 22 ensure the direct connection of the light-emitting diodes 40 and the indirect connection of the photodiodes 50. More specifically, a first negative electric potential is applied to the N-doped portions 41 of the light-emitting diodes via the connection elements. 48 and a first positive potential is applied to the P-doped portions 42 by the conductive portions 45. In addition, a second negative potential is applied to the P-doped portions 52 of the photodiodes by the conductive portions 55 and a second positive potential is applied to the portions. 51 N-doped by the lateral connection elements 58. It is thus able to apply a different potential difference to light emitting diodes and photodiodes. The control chip may also comprise the electronic elements, of the transistor type, providing emission control of the light-emitting diodes and the reading of the electrical detection signal of the photodiodes. Alternatively, it may be a passive component comprising essentially only electrical connection lines of the conductive portions to remote electronic elements.
The light-emitting device may further comprise a servo-control device adapted to correlate the electrical control signal of the light-emitting diodes as a function of the electrical signal for detecting adjacent photodiodes. It is then possible to increase or decrease the emission intensity of the light-emitting diodes as a function of the intensity of the light radiation detected by each adjacent photodiode. This servo device can be located in the control chip or be remote.
The light-emitting device may further comprise a device for analyzing the electrical signal for detecting the photodiode. It is then possible to compare the intensity of the detected light radiation with respect to a threshold value, and to modify the electrical control signal of the light-emitting diode as a function of a deviation from the threshold value, or even to issue information to destination of a user.
The optoelectronic device also comprises a cover 30 comprising the photoluminescent material 31 with photoluminescent particles. The photoluminescent material 31 covers the emission surface 44 of the light emitting diode and the receiving surface 54 of the photodiode. By coating, is meant to cover partially or completely a surface. The photoluminescent material here fully covers the transmitting and receiving surfaces.
The photoluminescent material comprises photoluminescent particles adapted to absorb at least a portion of the excitation light radiation emitted by the light-emitting diode and to emit in response a luminescence light radiation at a wavelength of luminescence greater than the wavelength excitation. The photoluminescent material is generally called phosphor (phosphor). The photoluminescent material may be in the form of a layer or pad or block. By layer is meant a material whose thickness is less than its lateral dimensions of length and width in the plane (X, Y), for example less than 10 times, 20 times or more. By pad or block is meant a material whose lateral dimensions of length and width are smaller than those of a layer and whose thickness may be of the order of magnitude of the lateral dimensions. By way of purely illustrative example, the photoluminescent material may be adapted to emit in the green, that is to say that the photoluminescence emission spectrum has a peak intensity of between 495 nm and 560 nm, and may for example be realized at Particle base of SrSi202N2: Eu. It can be adapted to emit in the yolk, that is to say that the emission spectrum by photoluminescence has a peak intensity of between 560nm and 580nm, and be made for example based on particles of YAG: Ce . Of course, other materials are possible as well as an emission in orange or in red. The size of the photoluminescent particles may be micrometer and be between lpm and 50 pm, the average size being of the order of 10 pm.
As a variant, the photoluminescent material may comprise monocrystalline photoluminescent particles of nanometric size, also called semiconductor nanocrystals. The semiconductor nanocrystals can be made of cadmium selenide (CdSe), indium phosphorus (InP), zinc sulphide (ZnS), zinc selenide (ZnSe), cadmium telluride (CdTe), zinc (ZnTe), cadmium oxide (CdO), zinc oxide and cadmium oxide (ZnCdO), zinc sulphide and cadmium sulphide (CdZnS), zinc and cadmium selenide (CdZnSe), sulphide silver and indium (AglnS2) and a mixture of at least two of these compounds, or any equivalent material. The photoluminescent particles then have an average size of between 0.2 nm and 1000 nm, for example between 1 nm and 100 nm, and especially between 2 nm and 30 nm. The size and / or composition of the photoluminescent particles are chosen according to the desired luminescence wavelength. Thus, CdSe photoluminescent particles having an average size of about 3.6 nm are suitable for converting blue light to red light, and CdSe particles of an average size of about 1.3 nm are suitable for converting light. blue light in green light.
The photoluminescent particles are preferably dispersed in a binder matrix in the form of a transparent and optically inert material providing a binder function with respect to the photoluminescent particles. By transparent material is meant a material which transmits at least 50% of the incident light and preferably at least 80%. By optically inert is meant a material that does not emit light in response to incident light absorption. The matrix may be made of silica or an at least partially transparent plastic material, in particular silicone or polylactic acid (PLA).
The photoluminescent material has a thickness which depends in particular on the type of photoluminescent particles. In the case of particles of micrometric size such as YAG: Ce, the thickness can be between 100prn and 500pm, and be for example of the order of 200pm. In the case of particles of nanometric size such as CdSe nanocrystals, it may be less than 50 μm, or even less than 30 μm, and may for example be of the order of 1 μm to 5 μm.
In FIG. 1a, the cover 30 has a plurality of photoluminescent blocks 31 each of which covers a light-emitting diode 40 and the adjacent photodiode 50. Each photoluminescent block 31 is contained in a space provided in the cover, delimited by side walls advantageously inclined and covered with a coating 32 reflecting vis-à-vis radiation emission and photoluminescence, for example a film of aluminum. The thickness of the cover depends in particular on that of the photoluminescent material. It may be made of an insulating, semiconductive or conductive material, in particular depending on whether the dielectric light extraction layer is present or not. For example, it is made of silicon. The lateral dimensions of the luminescent blocks are adjusted to the lateral dimensions, in the plane (X, Y), of a pair of light emitting diodes and the adjacent photodiode. It can thus be understood, according to the applications, between 2pm and 1mm. For example, it may be of the order of ΙΟΟμιτι in the case of a "lighting" application of the light emission device, and be of the order of 5pm to 20pm in the case of a "screen" application of the light emitting device. The cover 30 may further comprise a layer or plate 33 of a material transparent to the wavelengths of excitation and photoluminescence.
In operation, a direct voltage is applied to the light-emitting diodes 40 so that they emit light radiation at a so-called excitation wavelength, for example a blue light whose emission spectrum has a peak of intensity around 480nm. The light radiation is emitted towards the photoluminescent material 31 through the emission surface 44.
The photoluminescent material 31 converts at least a portion of the incident excitation radiation into a photoluminescence light radiation at a second wavelength called photoluminescence, for example in a green light whose emission spectrum has a peak of intensity. at 530nm in the case where the photoluminescent material comprises particles of SrSi 2 O 2 N 2: Eu.
Thus, the emission spectrum of the light-emitting device locally corresponds to the superposition of at least a portion of the light radiation emitted by the light-emitting diode and not converted by the photoluminescent material, and at least a portion of the radiation light converted by the photoluminescent material.
Moreover, a voltage is applied indirectly to the photodiodes 50 so that they detect incident light radiation received through the receiving surface 54.
According to the invention, insofar as the photoluminescent material 31 comprises photoluminescent particles and covers the emitting and receiving surfaces 44, a portion of the excitation light radiation is scattered, or backscattered, towards the surface of the light emitting surface. receiving 54 of the adjacent photodiode 50. Thus, insofar as the active area 53 of the photodiode 50 is made of a material of identical composition to that of the light emitting diode 40, the photodiode is adapted to detect at least a portion of the backscattered excitation radiation. The electrical signal of the photodiode resulting from the detection of incident light radiation is then read.
When the photoluminescent particles have a mean size less than the excitation wavelength, as is the case of the semiconductor nanocrystals mentioned above, the diffusion of the excitation radiation towards the adjacent photodiode is a Rayleigh scattering which is essentially isotropic. When the photoluminescent particles have a mean size greater than the excitation wavelength, as is the case for example YAG: Eu grains, the diffusion is a diffusion of Mie. In both types of scattering, the backscattered component of the light radiation is non-zero and can therefore be detected by the adjacent photodiode.
Thus, the optoelectronic light emitting device has the advantage of emitting light with an emission spectrum which depends in particular on the properties of the photoluminescent material and the emission spectrum of the light-emitting diodes, while allowing local detection. part of the light emitted by each of the light-emitting diodes.
There is thus an optoelectronic light emission device with integrated and localized control of the emission of the light-emitting diodes. The detection by the adjacent photodiode is facilitated insofar as the active detection zone has the same optical and electronic properties as those of the active emission zone.
Thus, the light radiation actually emitted by the light-emitting diodes is accessed by the detection carried out by the adjacent photodiodes, independently of the light conversion produced by the photoluminescent particles. This is particularly advantageous when the light-emitting device comprises a plurality of photoluminescent blocks adapted to convert the excitation light to different photoluminescence wavelengths, for example when certain photoluminescent blocks are adapted to convert in the red, d others in the green, others again in the yellow, etc. Thus, irrespective of the wavelengths of the photoluminescence radiation of the different blocks, the detection of the excitation light radiation of the different light-emitting diodes is carried out locally by the adjacent photodiodes.
Moreover, the mesa coplanar structuring and with recess of the light-emitting diodes and photodiodes makes it possible to obtain a high density of diodes, with lateral dimensions of the light-emitting diodes and photodiodes which can be of the order of 10 pm to 50 pm. The electrical connection of the diodes is also facilitated while ensuring good electrical insulation between the electrical connection elements.
Finally, the light-emitting device comprises electroluminescent diodes and monolithically integrated photodiodes, which can be obtained simultaneously by the manufacturing method detailed below.
Fig. 1b illustrates another embodiment of the light emitting device shown in Fig. 1a. It differs essentially by the cover 30 of photoluminescent material on the one hand and by the electrical connection layer 13 on the other.
In this example, the optoelectronic chip is similar to that shown in FIG. 1a, except that connection elements 22 here provide the electrical connection of the lateral connection element 48 of the light-emitting diode as well as of the conductive portion 55. of the photodiode adjacent to the same conductive portion 22 of the control chip 20. The lateral connection element 48 of the light-emitting diode 40 is here arranged between the light-emitting diode 40 and the adjacent photodiode 50. Thus, the portion 52 doped P of the photodiode and the N-doped portion 41 of the light-emitting diode are each carried at the same electrical potential.
In a variant where the lateral connection element of the photodiode is situated between the light-emitting diode and the adjacent photodiode (see FIG. 2a), a connection element can ensure the electrical connection of the conductive portion of the light-emitting diode and the light-emitting diode. lateral connection element of the photodiode adjacent to the same conductive portion of the control chip. Thus, the P-doped portion of the light-emitting diode and the N-doped portion of the adjacent photodiode are each carried at the same electrical potential.
Furthermore, the cover 30 here comprises a layer of a material 31 with photoluminescent particles identical or similar to that described above. Thus, the same material covers a plurality of pairs of light emitting diode and adjacent photodiode.
FIGS. 2a and 2b illustrate another embodiment of the optoelectronic light emitting device, which differs from that illustrated in FIG. 1a, essentially in that the optoelectronic device is adapted to emit excitation radiation by light-emitting diodes. and detecting at least a portion of the photoluminescence radiation by adjacent photodiodes.
In this example, the photoluminescent material cover 30 and the control chip 20 are identical or similar to those described with reference to FIG. The light-emitting diodes 40 and the photodiodes 50 have a mesa coplanar structure identical to that described with reference to FIG.
The active zone 53 of the photodiodes is adapted to detect the photoluminescence light radiation received through the reception surface 54. For this, as illustrated in detail in FIG. 2b, the active zone 53 comprises at least one quantum well 3 made based on a semiconductor material having a band gap energy lower than that of the doped portions 51, 52 and for detecting the received photoluminescence radiation. Insofar as the photoluminescence wavelength is greater than the excitation wavelength, the quantum well 3 has a band gap energy lower than that of the quantum wells 2 adapted to detect the excitation radiation. By way of example, the quantum well 3 can be made of InGaN with 23% indium to detect photoluminescence radiation in the green at about 530nm. Alternatively, the quantum well 3 may be made of 30% indium InGaN to detect red photoluminescence radiation at about 600 nm.
Insofar as the active detection zones 53 and emission 43 have the same material composition, the photoluminescence detection quantum well 3 is also present in the active zone 43 of the adjacent light emitting diode. In order not to modify the emission properties of the light-emitting diodes, the quantum well 3 is preferably situated between the quantum wells 2 and the N-doped portion 41. Indeed, the mobility of the holes being smaller than that of the electrons, the emission light radiation takes place essentially in the quantum wells 2 situated near the P-doped portion 42. Thus, the emission spectrum of the light-emitting diodes is not modified by the presence of the quantum well for detecting photoluminescence in the zones. active emissive.
In the active zone 53 of the adjacent photodiode, the quantum well 3 can detect the photoluminescence radiation as well as the excitation radiation. To detect only the photoluminescence radiation, it is advantageous that an optical filter 4 is provided between the receiving surface 54 of the photodiodes and the photoluminescent material 31, so as to transmit the photoluminescence light radiation and to block the transmission of the radiation. bright of excitement. The optical filter may be formed, in known manner, of a multilayer stack of dielectric materials such as, for example, SiN and SiO 2.
Thus, the light-emitting device has the aforementioned advantages while being able to detect photoluminescence light converted by the photoluminescence material as close as possible to the light-emitting diode, insofar as the photoluminescence emission is substantially isotropic. In the case where the cover comprises photoluminescent blocks adapted to emit at different wavelengths, the different photodiodes thus make it possible to detect the intensity of the various components of the overall emission spectrum of the optoelectronic device itself. By slaving the control signal of the different light-emitting diodes to the photodiode detection signal, it is possible to modify the overall emission spectrum of the optoelectronic device. Moreover, in the case where the cover comprises a photoluminescent material which continuously covers the light-emitting diodes and the photodiodes, the light-emitting device makes it possible to detect the photoluminescent spatial response of the material and thus to establish the spatial distribution or the photoluminescence mapping of the material.
Moreover, in order to optimize the light emission efficiency of the light-emitting diodes, a film of a reflective material (not shown) assumes the face of the insulating portions of the light-emitting diodes opposite the face in contact with the semiconductor portions. The film may be made of aluminum, silver, or any other material whose reflectance at the excitation wavelength is greater than or equal to 80%, preferably greater than or equal to 90%, or even 95%.
Moreover, so as to limit the transmission of the excitation radiation to the active zone of the photodiode, in particular when the incident excitation radiation has an angle of incidence vis-à-vis the optical filter resulting in a decreasing the rate of rejection of the excitation radiation by the filter, a film of an absorbent material (not shown) coating the face of the insulating portions of the photodiodes opposite to the face in contact with the semiconductor portions. The film may be made of gold or any other material whose absorbance at the excitation wavelength is greater than or equal to 80%, preferably greater than or equal to 90%, or even 95%.
An exemplary method of producing a light emitting device according to another embodiment is now described with reference to Figures 3a to 3h. This example is similar to that described in the patent application FR 1456085 filed on 27/06/2014, the text of which is considered as an integral part of the present description.
With reference to FIG. 3a, a stack formed of an N-doped semiconductor layer 61, on a growth substrate 60, is provided with an active layer 63 comprising quantum wells, of which at least one quantum well is said to be emissive and at least one a so-called detection quantum well described with reference to FIG. 2a interposed between barrier layers, and a doped semiconductor layer 62. The free surface of the P-doped layer is then coated with an electrically conductive layer 65, for example aluminum or silver. These stacked layers are intended to form the P-doped portions 42, 52, the N-doped portions 41, 51 and the active areas 43, 53 of the light-emitting diodes and photodiodes, as well as the conductive portions 45, 55. Note that the layer N-doped 61 may comprise a heavily doped N + portion covering the substrate, covered with a portion having a lower doping level. The two parts of the N-doped layer may be made of the same material or of two different materials. Furthermore, the growth substrate may be an insulating material, for example sapphire, or a semiconductor material, for example silicon, or based on a III-V or II-VI material.
Structured studs 64 of hard mask are then deposited. Plots of large lateral dimensions are intended for the formation of the electroluminescent diodes while pads of lower lateral dimensions are intended for the formation of the photodiodes. The pads 64 have a structure forming a recess 64a at a lateral flank. Thus, each stud 64 comprises a first portion 64b, forming a base which rests on the conductive layer 65, the lateral dimensions subsequently define those of the second portion 41b, 51b of the N-doped portions 41, 51 of the diodes. It comprises a second portion 64c, which extends from the first portion 64b, the lateral dimensions of which subsequently define those of the first portion 41a, 51a of the N-doped portions of the active zone 43, 53 and the portion 42 , 52 P-doped diodes. The thicknesses of the two parts of the hard masks are chosen as a function of the etching speed of the different materials of the stack of layers.
With reference to FIG. 3b, etching of the stack of the conductive layer 65, of the P-doped layer 62, of the active layer 63, and of a portion of the N-doped layer 61, is carried out from FIG. exposed surface of the stack between the pads 64 of hard mask. The portion 64a forming step of the hard mask pads is also etched during this step. The etching is a dry etching, such as reactive ion etching or plasma etching.
Referring to Figure 3c, etching is continued from the exposed surface of the stack not covered by the pads 64 hard mask. Thus, a plurality of mesa coplanar structures each formed of a stack of a conductive portion 45, 55, a portion 42, 52 doped with P, an active zone 43, 53, and a portion 41 are obtained. , N-doped 51 having a recess 46, 56 between a first portion 41a, 51a in contact with the active zone and a second portion 41b, 51b covering the substrate 60. The first portion 41a, 51a of the N-doped portion has lateral dimensions in the plane (X, Y) lower than those of the second part 41b, 51b so as to form a recess surface 46, 56. Preferably, the mesa structures intended to form light-emitting diodes have lateral dimensions greater than those of the electrodes. adjacent mesa structures for forming photodiodes. The conductive portions have an exposed surface, that is to say free of any hard mask residues.
With reference to FIG. 3d, the insulating portions 47, 57 arranged in the spaces between the mesa structures and covering the side flanks thereof, with the exception of the recess surfaces 46, 56 are produced. The insulating portions may be obtained by a conformal deposition of a layer of a dielectric material, for example SiN having a thickness of between 3 nm and 100 nm, continuously covering the mesa structures and the exposed surface of the substrate. Only the portions located on the lateral flanks of the mesa structures are then preserved by dry etching the portions of the dielectric layer situated between the mesa structures, on the recess surfaces and on the face of the conductive portions.
Optionally, by conventional steps of lithography, etching and cathodic sputtering or chemical vapor deposition type deposition, a film made of a reflective material with respect to the wavelength of excitation, for example in aluminum or silver, covering the exposed surface of the insulating portions which cover the lateral flanks of the mesa structures intended to form light-emitting diodes. As an illustration, the thickness of the film may be less than or equal to 50 nm in the case of aluminum, or be less than or equal to 75 nm in the case of silver. It is also possible to produce a film made of an absorbent material with respect to the excitation wavelength, for example in gold, covering the exposed surface of the insulating portions that cover the lateral flanks of the mesa structures intended to form photodiodes. . As an illustration, the thickness of the film may be greater than or equal to 100 nm in the case of gold. Dry etching is optionally performed to expose the surface of the conductive portions again, and to electrically insulate the conductive portions of the reflective or absorbent films by the insulating portions. In the case where the reflective and absorbent films are electrically conductive, they can cover the corresponding recess surfaces.
With reference to FIG. 3e, the lateral connection elements 48, 58 are formed by filling the space between the mesa structures. For this, a full plate deposition of an electrically conductive material is carried out, followed by a chemical mechanical planarization and / or etching, for example an RIE etching, so as to remove the deposited conductive material covering the mesa structures. and thus make free the upper face of the conductive portions 45, 55 and that of the insulating portions 47, 57. The upper face obtained is then substantially flat.
With reference to FIG. 3f, an electrical connection layer 13 is made covering the upper face of the structure obtained at the end of the preceding step, the coupling layer is formed of a dielectric material surrounding connection elements. 14 which extend between the two opposite faces of the layer 13 and come into contact with the conductive portions 45, 55 and lateral connection elements 48, 58. For this, a dielectric layer is deposited on the structure obtained, then by lithography. and etching, cavities are defined for receiving the connection elements. These cavities are then filled by a full-plate deposit of an electrically conductive material, for example aluminum, followed by a chemical mechanical planarization. The coupling layer has a substantially flat free face adapted to a gluing for example direct with a control chip.
With reference to FIG. 3g, the structure formed on a control chip 20 is fixed at the free surface of the connection layer 13. The control chip comprises electrically conductive portions 22 of polarization coming into contact with the connection elements The fixing may in particular be ensured by direct bonding, or molecular bonding, between the respective metal surfaces of the optoelectronic chip and the control chip, as well as between the respective dielectric surfaces of the two chips. Alternatively, attachment by electrical connection microbeads and / or thermocompression can also be performed.
In this example, the growth substrate 60 is removed, for example by mechano-chemical planarization and / or dry etching, so as to expose the upper face of the optoelectronic chip having the emission 44 and receiving 54 surfaces of the diodes. 40, 50.
Subsequently, by means of conventional lithography, etching and deposition steps, optical filters 4 cover the receiving surface 54 of the photodiodes, for example by alternating layer portions of dielectric materials. The upper face of the optoelectronic chip and the optical filters 4 are then covered with a layer 12 of a dielectric material which is then planarized, for example mechanochemically. The free face of the layer may be locally structured so as to form relief patterns arranged facing the emission surfaces and possibly the receiving surfaces.
With reference to FIG. 3h, a cap 30 is fixed with blocks 31 of photoluminescent particle material on the front face 11a of the optoelectronic chip, so that the photoluminescent material covers the emission surface 44 of the light-emitting diodes and the receiving surface 54 of the adjacent photodiodes. Here, each photoluminescent block 31 is opposite a pixel comprising a light emitting diode and an adjacent photodiode. Photoluminescent blocks may have different luminescence wavelengths from each other.
It is thus possible to attach to the optoelectronic chip, by thermocompression or direct bonding, a frame comprising a mesh of through openings intended to receive the photoluminescent blocks, and then to fill the openings by a so-called photoluminescent material deposition additive method. The process may be inkjet, heliographic, screen printing, flexographic, spray coating or drop coating, or any other suitable technique. The binder matrix can then be polymerized, for example by ultraviolet radiation.
Specific embodiments have just been described. Various variations and modifications will occur to those skilled in the art.
Thus, the embodiments described above mention an N doped portion having a step surface and a doped portion P located opposite the control chip. The conductivity types of the doped portions can of course be reversed.
Moreover, some blocks may not comprise photoluminescent material but an optically inert material, that is to say not emitting light in response to possible absorption of the excitation radiation, and comprising scattering particles dispersed in a binding matrix. The diffusing particles may have a mean nanometric size, for example between 0.2 nm and 1000 nm, possibly of the order of 5 nm to 10 nm, or a mean micrometric size, for example between 50 μm and 50 μm, possibly of the order of 10pm.

权利要求:
Claims (14)
[1" id="c-fr-0001]
An optoelectronic light emitting device (1), comprising: at least one light-emitting diode (40) having an emitting surface (44), able to emit a so-called excitation light radiation; and - a photoluminescent material (31) which covers the emission surface (44), the photoluminescent material comprising photoluminescent particles adapted to at least partially convert said excitation light radiation through the emission surface (44) in a light radiation called photoluminescence; characterized in that it comprises at least one photodiode (50), adjacent to the light-emitting diode (40), having a receiving surface (54) coated with the photoluminescent material (31), and adapted to detect at least a portion of the excitation radiation and / or photoluminescence radiation from the photoluminescent material (31) through the receiving surface (54).
[2" id="c-fr-0002]
Optoelectronic device (1) according to claim 1, wherein the light-emitting diode (40) and the photodiode (50) each have a mesa structure, the emission surface (44) and the receiving surface (54) being substantially coplanar.
[3" id="c-fr-0003]
Optoelectronic device (1) according to claim 1 or 2, wherein the light-emitting diode (40) and the photodiode (50) each comprise a first semiconductor portion (41, 51) doped according to a first conductivity type and a second portion. semiconductor (42, 52) doped according to a second conductivity type opposite to the first conductivity type, the first and second semiconductor portions being respectively substantially coplanar and made of a material of the same corpuscle.
[4" id="c-fr-0004]
Optoelectronic device (1) according to claim 3, wherein the first doped semiconductor portion (41) of the light emitting diode and that (51) of the photodiode each have a lateral flank having a recess surface (46, 56) formed by a second portion (41b, 51b) of the first doped semiconductor portion (41, 51) to a first portion (41a, 51a) thereof.
[5" id="c-fr-0005]
Optoelectronic device (1) according to claim 4, wherein a lateral electrical connection element (48, 58) extends between the light-emitting diode (40) and the adjacent photodiode (50), so as to be in electrical contact with the step surface (46, 56) of the first doped semiconductor portion (41, 51), the lateral connection element being further electrically isolated from the second doped semiconductor portion (42, 52) and active regions (43, 51). , 53) located between the first (41, 51) and second (42, 52) semiconductor portions doped with dielectric portions (47, 57) covering lateral flanks of the mesa structures.
[6" id="c-fr-0006]
Optoelectronic device (1) according to any one of claims 3 to 5, in which the light-emitting diode and the photodiode each comprise an active zone (43, 53) located between the first (41, 51) and second (42, 52) doped semiconductor portions, the active areas being substantially coplanar and made of a material of the same composition.
[7" id="c-fr-0007]
Optoelectronic device (1) according to claim 6, in which the active zones (43, 53) of the light emitting diode and of the photodiode each comprise at least one first quantum well (2), said first quantum well of the active zone. (43) of the light emitting diode being adapted to emit the excitation light radiation at an excitation ondexfite length.
[8" id="c-fr-0008]
Optoelectronic device (1) according to claim 7, in which the active areas (43, 53) of the light-emitting diode and the photodiode each comprise at least one second quantum well (3), said quantum well of the active zone ( 53), the photodiode being adapted to detect the photoluminescence light radiation.
[9" id="c-fr-0009]
Optoelectronic device (1) according to claim 8, wherein the second quantum well (3) is located between a first N-type doped semiconductor portion (41, 51) and the first quantum well (2).
[10" id="c-fr-0010]
Optoelectronic device (1) according to any one of claims 1 to 9, comprising an optical filter (4) disposed between the photoluminescent material (31) and the receiving surface (54) of the photodiode, the filter being adapted to transmitting the photoluminescence radiation and blocking a transmission of the excitation radiation.
[11" id="c-fr-0011]
Optoelectronic device (1) according to any one of claims 1 to 10, further comprising a control device adapted to modify the excitation light radiation emitted by the light emitting diode from a light radiation detection signal. detected by the photodiode (50).
[12" id="c-fr-0012]
12. A method of manufacturing an optoelectronic light emitting device (1) according to any one of the preceding claims, comprising the following steps: i) the production of at least one light-emitting diode (40) having a surface of emission (44) and able to emit a so-called excitation light radiation, and at least one adjacent photodiode (50) having a receiving surface (54); ii) covering the emission (44) and receiving (54) surfaces with a photoluminescent material (31) having photoluminescent particles adapted to at least partially convert said excitation light radiation through the emission surface; (44) in a light radiation called photoluminescence.
[13" id="c-fr-0013]
13. Method according to the preceding claim, wherein step i) comprises the following substeps: * a. providing a layer stack comprising a first doped semiconductor layer (61) and a second doped semiconductor layer (62) between which is interposed an active layer (63) having at least one quantum well (2); b. etching the stack of layers to form a mesa structure for forming a light emitting diode (40) and a mesa structure for forming an adjacent photodiode (50), each mesa structure being formed of a stack of one first doped semiconductor portion (41, 51), an active region (43, 53) and a second doped semiconductor portion (42, 52), the first doped semiconductor portion (41, 51) of said mesa structures having a flank lateral having a recess surface (46, 56); vs. producing the dielectric portions (47, 57) covering the lateral flanks of the mesa structures with the exception of the recess surfaces; d. depositing an electrically conductive material (48,58) between the mesa structures, the conductive material being in contact with the recess (46,56) of the first doped semiconductor portion (41,51) and electrically isolated by the portions dielectric (47, 57) of the active region (43, 53) and the second doped semiconductor portion (42, 52).
[14" id="c-fr-0014]
14. The method of claim 13, including a step of producing electrical connection elements (14) adapted to direct bias the light emitting diode (40) and indirectly the photodiode (50) from electrically conductive portions (22). ) of polarization located on a face opposite to the photoluminescent material (31).

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法律状态:
2016-12-29| PLFP| Fee payment|Year of fee payment: 2 |

2017-06-30| PLSC| Publication of the preliminary search report|Effective date: 20170630 |

2018-01-02| PLFP| Fee payment|Year of fee payment: 3 |

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2020-12-28| PLFP| Fee payment|Year of fee payment: 6 |

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FR1563251A|FR3046298B1|2015-12-23|2015-12-23|OPTOELECTRONIC LIGHT EMISSION DEVICE|FR1563251A| FR3046298B1|2015-12-23|2015-12-23|OPTOELECTRONIC LIGHT EMISSION DEVICE|

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US15/389,837| US10396239B2|2015-12-23|2016-12-23|Optoelectronic light-emitting device|

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