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    • 专利摘要:
    The invention relates to a papillary impression sensor (100) comprising, superimposed on a contact surface for applying the imprint to be imaged, a matrix optical sensor and lighting means. The illumination means are arranged between the contact surface and a detection surface (125) of the matrix optical sensor, and consist of a plurality of organic light emitting diodes (101), called OLEDs. Each OLED (101) extends in one piece over more than one third of a width (L1) of said detection surface, and the OLEDs extend together in one or two sets of parallel patterns distributed between them. according to the length (L2) of the detection surface. This OLED configuration makes it possible to arrange the OLED driving transistors outside the detection surface. (125).
    公开号:FR3046275A1
    申请号:FR1563178
    申请日:2015-12-23
    公开日:2017-06-30
    发明作者:Jean-Francois Mainguet；Jerome Boutet；Joel Yann Fourre；Francois Templier
    申请人:Commissariat a lEnergie Atomique CEA；Safran SA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    OLED LIGHT FINGER SENSOR DESCRIPTION
    TECHNICAL FIELD The invention relates to the field of sensors for imaging an imprint related to the particular folds of the skin, in particular a fingerprint, but also a palmar, plantar, or phalangeal imprint. These various imprints are collectively referred to as papillary impressions.
    STATE OF THE PRIOR ART
    Various prior art papillary impression sensors, in particular optical type sensors, in which the acquisition of an image of the impression merely implements an illumination of the impression and then an acquisition of image using a photosensitive component.
    These optical type sensors are generally in the form of a stack comprising a lower light-emitting layer, called a backlighting layer, a matrix of photo-detectors, and optionally a transparent protective layer on which the user must position. his finger.
    An object of the present invention is to provide an optical type papillary impression sensor, ultimately resulting in an image of improved quality, in comparison with the devices of the prior art.
    STATEMENT OF THE INVENTION
    This objective is achieved with a papillary impression sensor comprising, superimposed, a contact surface for applying the imprint to be imaged, a matrix optical sensor, and lighting means.
    According to the invention, the lighting means are disposed between said contact surface and a detection surface of the matrix optical sensor.
    They consist of a plurality of organic light-emitting diodes, called OLEDs, each OLED extending in one piece over more than one-third of a width of said detection surface, and the OLEDs extending together in a directional direction. or two sets of patterns parallel to each other distributed along the length of the detection surface.
    According to the invention, the lighting means are formed by OLEDs.
    The general knowledge of a person skilled in the art would have led him to have the OLEDs under the matrix optical sensor, forming the photosensitive component described in the introduction.
    An idea underlying the invention consists in noting that it is more advantageous to arrange the OLEDs over a detection surface of the matrix optical sensor. This arrangement allows the OLEDs and the matrix optical sensor to be made during a single manufacturing process on a single substrate.
    In order to offer a great modularity of illumination, the lighting means are formed by a plurality of light-emitting diodes. The general knowledge of a person skilled in the art would have led him to arrange the OLEDs in OLED matrix, according to a grid of several lines and several columns, an OLED being placed at each intersection of a line and a column. In particular, it would have provided an OLED for each pixel of the matrix optical sensor. The invention proposes here to overcome this prejudice. The OLEDs according to the invention thus simply form one or two series of parallel patterns each formed in one piece.
    The OLEDs can thus be driven from the edge of the fingerprint sensor, without the control means extending between two OLEDs, above the center of the detection surface.
    In addition, this configuration of OLEDs in lines makes it possible to acquire different images of a papillary impression, corresponding to the ignition of different series of OLED lines, these images being able to be combined to obtain an image of improved quality.
    Preferably, each OLED is connected to a control unit, arranged to control the switching on and off of the OLED, an orthogonal projection of the control units in the plane of the detection surface being located outside the OLED. said detection surface.
    A distance between the matrix optical sensor and the contact surface is advantageously less than 25 μm.
    Each OLED can extend in one piece over more than 90% of the width of said detection surface, the OLEDs extending together in a single series of patterns parallel to each other.
    Preferably, the lighting means consist of OLEDs of different types, which differ in the central wavelength of the light radiation that they are adapted to emit.
    The OLEDs may each include a spectral filter and share together a same organic semiconductor layer adapted to emit multi-spectral radiation, and the different types of OLEDs may differ by the central wavelength of the transmission band of the spectral filter.
    Advantageously, each OLED has two distinct emission central wavelengths, depending on the value of a bias voltage applied to it, and the different types of OLEDs differ by the bias voltage supplied by a connected control unit. to the OLED.
    The organic light-emitting diodes preferably comprise at least one first type of organic light-emitting diode, adapted to emit light radiation with a central wavelength of less than 590 nm, and a second type of organic light-emitting diode, suitable for emitting light radiation of central wavelength greater than 600 nm.
    Advantageously, the OLEDs comprise: a first type of OLED, adapted to emit a central wavelength light radiation of between 400 and 495 nm; a second type of OLED, adapted to emit light radiation of central wave between 495 and 590 nm, and a third type of OLED, adapted to emit a light radiation of central wavelength greater than 600 nm.
    OLEDs may together form a periodic arrangement, with an elementary pattern comprising said several types of OLEDs.
    The OLEDs may together form a periodic arrangement, with an elementary pattern such that the average repeat pitch of an OLED type adapted to emit at a first wavelength is less than the average repeat pitch of a type of OLED adapted to emit at a second wavelength greater than the first wavelength.
    Each OLED may have a band shape, with OLEDs forming parallel bands between them.
    Preferably, each OLED extends above the array optical sensor, without overlapping the photosensitive areas of the pixels of the array optical sensor.
    The OLEDs are advantageously transparent and extend above the matrix optical sensor (120; 320) by covering the photosensitive areas of the pixels of said sensor.
    Preferably, the OLEDs are regularly distributed along the length of the detection surface of the matrix optical sensor, with a repetition pitch equal to the pixel pitch of the matrix optical sensor along said length.
    BRIEF DESCRIPTION OF THE DRAWINGS
    The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIG. 1A schematically illustrates a view from above of a first embodiment of a papillary impression sensor according to the invention; - Figures IB and IC schematically illustrate sectional views along two orthogonal axes, the fingerprint sensor shown in Figure IA; FIG. 2 illustrates an example of a papillary impression sensor as diagrammatically represented in FIGS. 1A-1C; FIG. 3 illustrates a second embodiment of a papillary impression sensor according to the invention; FIG. 4 illustrates a third embodiment of a papillary impression sensor according to the invention; FIGS. 5 and 6 illustrate two embodiments of a papillary impression sensor according to the invention, comprising means for controlling the OLEDs; and FIGS. 7A and 7B schematically illustrate two embodiments of a papillary impression sensor according to the invention, presenting OLEDs of different types adapted to emit at different wavelengths.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    Figures IA to IC schematically illustrate a first embodiment of a papillary impression sensor according to the invention. In the following, we will consider, by way of example and without limitation, that it is a fingerprint sensor 100.
    FIG. 1A is a view from above of this sensor, in a plane (XOY), while FIGS. 1B and 1C are sectional views respectively in a plane orthogonal to the plane (XOY) and parallel to the axis (OY) , and in a plane orthogonal to the plane (XOY) and parallel to the axis (OX).
    FIG. 1A illustrates more particularly the illumination means of the sensor according to the invention, formed by light-emitting diodes 101, called OLEDs for "Organic Light-Emitting Diode". For example, the fingerprint sensor has more than ten OLEDs.
    Throughout the text, an OLED designates an organic light-emitting diode whose ignition and extinction are controlled by a potential difference of the order of a few volts, between an upper electrode and a lower electrode surrounding a stack of layers (s). ) organic semiconductor (s).
    OLED technology offers a great deal of flexibility in terms of sizing, emission wavelength, peak emission width, and so on.
    In particular, the OLEDs may have a repetition pitch of less than 1 mm, or even 500 μm or less. They can also be very close to each other. For example, two neighboring OLEDs may be spaced less than 10 pm from each other, or even less than 5 pm, or even adjacent.
    Another advantage is that they can be deposited at a low temperature (approximately 80-100 ° C.), which does not imply any significant incompatibility with other technologies used in the impression sensor according to the invention. .
    The OLEDs 101 are arranged above a matrix optical sensor 120. In other words, the lighting means according to the invention and the matrix optical sensor are aligned along an axis (OZ) orthogonal to the plane (XOY). .
    The matrix optical sensor 120 is formed of a plurality of photo-detectors 102 arranged in a grid. The grid preferably has a square mesh with N rows and M columns. Each photo-detector 102 corresponds to a pixel of the matrix optical sensor 102. FIG. 1 B illustrates in particular a line of pixels of the matrix optical sensor 120. FIG. 1C illustrates in particular a column of pixels of the matrix optical sensor 120. The extent of the lines defines the width L1 of the detection surface 125 of the matrix optical sensor. The extent of the columns defines the length L2 of the detection surface of the matrix optical sensor. The width L1 of the detection surface 125 of the matrix optical sensor is aligned with the axis (OY). The length L2 of the fingerprint sensor 100 is aligned with the axis (OX). The largest side of the matrix optical sensor can be indifferently the length or the width. The pixel pitch of the matrix optical sensor is for example 50 μm, or 25 μm.
    The detection surface 125 is framed in dashed lines in FIG. 1A, and symbolized by a dotted line in FIGS. 1B and 1C.
    The photo-detectors 102 are for example PiN diodes (for "P-Type Intrinsic N-Type") made of inorganic material such as silicon for example. In a variant, the photo-detectors are organic photodetectors (called OPDs), or phototransistors, or any other photosensitive element.
    Control units of these photo-detectors are made here in thin film transistor technology, called TFT for "Thin-Film Transistor", on a substrate 130 made of glass. The invention is of course not limited to this TFT technology. It can be applied to other technologies, such as CMOS technology (for "Complementarity Metal-Oxide Semiconductor") or even printed electronics. The substrate may be made of silicon, metal or plastic, in particular for producing a flexible papillary impression sensor, etc.
    The matrix optical sensor 120 is configured to detect an optical signal emitted by the OLEDs 101 and backscattered onto an obstacle, here a finger.
    The OLEDs 101 are arranged above the matrix optical sensor 120.
    In particular, the OLEDs are arranged on the side of the matrix optical sensor opposite to the substrate 130, that is to say on the side of the detection surface 125 of the matrix optical sensor 120. The detection surface corresponds to the surface on which extend the photodetectors 102 in a plane parallel to the plane (XOY).
    This arrangement makes it possible to promote the amount of light entering the skin, in other words the tissues, and to minimize the diffusion of light before reaching the papillary impression.
    There is little light that can go directly from the OLEDs to the pixels of the optical array sensor. And even if there were, it would be enough not to exploit the pixels located directly under the OLED lit.
    The OLEDs 101 share with the matrix optical sensor 120 the same substrate 130. In other words, the OLEDs 101 and the matrix optical sensor 120 are integrated on the same substrate.
    Thus, the OLEDs and the matrix optical sensor can be made in a single manufacturing process. In particular, instead of manufacturing one then the other on a dedicated substrate and then gluing them together, the matrix optical sensor can be made by depositing layers on a substrate, then the OLEDs by depositing layers directly on the substrate. above the same substrate.
    In the example shown, a planarization layer 140 directly covers the photodetectors 102, the OLEDs being deposited directly on this planarization layer.
    In the first embodiment illustrated in FIGS. 1A-1C, the OLEDs 101 each extend in one piece along (OY), substantially over the entire width L1 of the detection surface 125 of the matrix optical sensor, for example at least 90% of this width.
    In the example illustrated in FIGS. 1A-1C, they extend even beyond the detection surface of the matrix optical sensor, which has the advantage of limiting edge effects on the images acquired. In other words, they extend above said detection surface, protruding from both sides of the latter in a plane (XOY).
    Here, OLEDs all have the same extent along the (OY) axis.
    In the example shown in Figures IA to IC, they also have the same dimensions according to (OX) and (OZ).
    They extend in patterns parallel to each other, here in parallel strips between them.
    Alternatively, each pattern has a trapezoidal shape, or in particular zigzag sinusoidal, or any other shape elongated according to (OY).
    The patterns here extend parallel in them and parallel to the axis (OY), that is to say parallel to the pixel lines of the matrix optical sensor.
    In a variant, the patterns may extend parallel to each other and slightly inclined relative to the axis (OY) and to the pixel lines of the matrix optical sensor. This inclination, less than 8 °, in some cases makes it possible to improve the resolution of the images obtained.
    The OLEDs 101 are distributed along the length L2 of the detection surface 125 of the matrix optical sensor. They are therefore located one below the other in a plane parallel to the plane (XOY), their ends being aligned on an axis parallel to (OX).
    They are therefore distributed here on a surface of dimensions greater than or equal to those of the detection surface 125 of the matrix optical sensor.
    The OLEDs are distributed here regularly along the length L2 of the detection surface 125 of the matrix optical sensor, with a repetition pitch PI equal to the pixel pitch of the matrix optical sensor along the axis (OX).
    Each OLED is connected to a control unit 111, configured to control the switching on and off of each OLED according to an addressing principle found in AMOLED technology (for "Active Matrix OLED").
    The driving units 111 extend entirely outside the detection surface 125 along one side thereof parallel to (OX).
    Each control unit 111 comprises at least one transistor, formed here on the substrate 130, at the periphery of the matrix optical sensor. On the gate of each transistor, drivers can be connected, for example to control predetermined switching on and off.
    The control units 111 are aligned one after the other along the axis (OX), that is to say along an axis orthogonal to the axis of elongation of the OLEDs.
    The control units 111 are placed on one side of an OLED, along its axis of elongation, on both sides of an OLED along its axis of elongation, or distributed between the two (which makes it possible to limit their pitch repetition on each side of the OLEDs).
    Here, the transistors are made in TFT technology, and made at the same time as transistors necessary for the operation of the matrix optical sensor.
    In a variant, the control units are not made on the substrate 130, but offset from it, and connected at the periphery thereof to an electrical contact connected to an OLED. They are for example made in CMOS technology, connected and possibly fixed at the periphery of the substrate 130. Again, they extend entirely outside the detection surface 125.
    In the AMOLED matrices of the prior art, the OLEDs are formed in a multi-line and multi-column matrix, and each driver unit is disposed near the corresponding OLED within the OLED grid. With such an AMOLED matrix, the control units would therefore extend inside the detection surface 125.
    When the control units are made on the same substrate with the matrix optical sensor, the invention then makes it possible to release, in the center of the detection surface, locations for transistors dedicated to the matrix optical sensor and not to the control of the OLEDs.
    In operation, the user puts his finger directly on the fingerprint sensor, in direct physical contact with a contact surface 106 thereof. The skin (or at least the skin of the ridges of the papillary impression) is in direct contact with the contact surface 106.
    The contact surface 106 is a part of the outer surface of the matrix optical sensor, located above the OLEDs and the matrix optical sensor.
    The contact surface 106 may belong to the upper surface of a thin protective layer 107 covering the OLEDs.
    Alternatively, the contact surface simply belongs to an upper electrode covering the OLEDs.
    The contact surface 106 is preferably flat, parallel to the plane (XOY).
    Where appropriate, gaps between adjacent OLEDs are filled by a transparent material.
    In order to limit diffusion effects between the finger and the matrix optical sensor, the distance H1 between it and the contact surface 106 must be reduced, for example less than 25 μm, preferably between 1 μm and 20 μm.
    The height H1 is measured according to (OZ), between the plane receiving the vertices of the photodetectors 102, and the plane receiving the vertices of the contact surface, the vertices of the contact surface being located above the OLEDs.
    OLEDs are interspersed in this height space H1. Therefore, the OLED thickness according to (OZ) is advantageously less than 25 μm and even 20 μm.
    For reasons of legibility of the figures, the contact surface is not necessarily shown in the following figures.
    In operation, all the OLEDs are not lit simultaneously, and only the pixels of the matrix optical sensor that are not located directly under an illuminated OLED can be processed.
    FIG. 2 illustrates in a slightly more detailed manner the fingerprint sensor 100, in a sectional view, along the same plane as FIG.
    Each OLED 101 is defined by the intersection of: a lower electrode 101A specific to said OLED (on the substrate side 130); an upper electrode 101B, common to all the OLEDs, which extends in one piece over the detection surface of the matrix optical sensor 120 (the electrode farthest from the substrate 130); and a stack 101C of at least one organic semiconductor layer, common to all OLEDs, which extends in one piece over the detection surface of the matrix optical sensor 120.
    Each OLED according to the invention is therefore defined by the intersection between the upper electrode, a lower electrode, and the stack of at least one organic semiconductor layer.
    In particular, the extent of an OLED in a plane parallel to the plane (XOY) corresponds to the intersection between the projection in this plane of the upper electrode, the projection in this plane of a lower electrode, and the projection in this plane of said stack.
    The boundaries of each OLED are represented in dashed lines.
    The lateral dimensions of an OLED are here defined by the extent of the lower electrode 101A in the (XOY) plane, which gives access to small dimensions of the OLEDs according to (OX), for example less than 20 μm, in particular 10 pm In addition, the spatial constraints during the deposition of the stack 101C are reduced. The assembly is covered with a protective layer, also called encapsulation layer, not shown. The upper surface of this protective layer forms the outer surface of the fingerprint sensor, including the contact surface on which the user places his finger for fingerprint reading. The stack 101C which extends full layer above the optical array sensor 120, is transparent over an OLED emission spectral band. The transmission coefficient on this spectral band is for example greater than 70%. It can be greater than 70%, between 450 and 750 nm.
    It is the same for the upper electrode 101B, which may be a thin metal or ΙΊΤΟ (indium tin oxide).
    According to a variant not shown, the stack of at least one organic semiconductor layer is specific to each OLED. The stacks of the several OLEDs are made for example by layer deposition through a mask.
    The lower electrodes 101A are opaque to the emission wavelength of the OLED (transmission coefficient for example less than 30% between 450 and 750 nm). This prevents the light emission supplied by the OLED being sent directly to the matrix optical sensor, without reflection on the imprint to be imaged. However, we can tolerate that the pixel under the OLED is dazzled, since in operation all the OLEDs will not be lit simultaneously. The efficiency of an OLED can be increased with reflective lower electrodes 101, for example with a reflection coefficient greater than 70% between 450 and 750 nm.
    In the example shown in FIG. 2, the repetition pitch of the OLEDs is constant, and equal to the pixel pitch of the matrix optical sensor according to (OX).
    In other words, each OLED corresponds to a row of pixels of the matrix optical sensor 120.
    FIG. 3 illustrates a variant in which the repetition pitch ΡΓ of the OLEDs is constant, and distinct from the pixel pitch P2 pixel of the matrix optical sensor according to (OX).
    The numerical references of FIG. 3 correspond to those of FIG. 1, the first digit being replaced by a 3.
    In particular, the repetition step PI 'is an integer multiple of P2.
    For example P2 is of the order of 50 μιτι or 25 μιτι, and PI 'is between 10 and 20 times greater, for example of the order of 500 μιτι, preferably less than one millimeter.
    Each OLED can then extend over several rows of pixels of the array optical sensor 320.
    The different OLEDs can be close to each other. For example, the neighboring edges of two neighboring OLEDs are spaced a distance less than the width of a pixel of the matrix optical sensor along the axis (OX), in particular less than 25 μιτι or even 10 μιτι.
    FIG. 4 illustrates a third embodiment of a papillary impression sensor according to the invention.
    This embodiment will only be described for its differences with respect to the embodiment of FIGS. 1A-1C.
    According to this embodiment, the OLEDs are divided into two series.
    A first series of OLED 401A extends on the left side of the fingerprint sensor 400.
    It consists of OLEDs which each extend in one piece over approximately half of the detection surface 425 of the matrix optical sensor.
    They extend in particular above said detection surface, from the middle of the latter in the direction of the width L1, to the edge of this detection surface and even beyond, in the example of Figure 4.
    This first OLED series is driven by 411A control units, arranged on the left edge of the substrate.
    A second set of OLEDs 401B extends on the right side of the fingerprint sensor 400.
    The second series of OLEDs 401B is symmetrical with the first series of OLED 401A relative to a plane parallel to (XOZ) passing through the middle of the detection surface 425, in the direction of its width L1.
    This second series of OLED 401B is driven by control units 411B, arranged on the right edge of the substrate.
    Each OLED 401A of the first set of OLEDs, and its symmetrical 401B in the second set of OLEDs, are spaced a distance not greater than one third of the width L1 of the detection surface 425, preferably only a few micrometers.
    Figures 5 and 6 illustrate two embodiments of a fingerprint sensor according to the invention, comprising OLED control means, shown in a sectional view in a plane parallel to (XOZ).
    Here, the driving circuits of OLEDs and photodetectors of the matrix optical sensor, made using TFT technology, are illustrated on a glass substrate 530.
    The matrix optical sensor consists of photodetectors 502, here diodes PiN.
    Each photodetector 502 is connected to a transistor 521, ensuring the reading and then resetting thereof.
    The transistors 521 are formed directly on the glass substrate 530, separated from the photodetectors by an insulating layer 550. A connection extends through this insulating layer to connect each transistor 521 to a photodetector 502.
    Above each photodetector 502, in direct contact therewith, a metal connector 523 polarizes the latter.
    The photodetector has a transparent upper electrode.
    The upper surface of each photodetector 502 forms a photosensitive area of the matrix optical sensor. The assembly is covered with a second 540 insulation layer, which can be planarized before forming the OLEDs.
    In the embodiment of FIG. 5, each OLED has a specific stack 501D of organic semiconductor layers.
    An OLED is then defined by the intersection between a specific lower electrode 501A, the stack of organic semiconductor layers 501D, and the upper electrode 501B common to all OLEDs.
    The lower electrodes 501A are formed directly on the insulating layer 540.
    Each 501D stack of organic semiconductor layers 501D is formed directly on a lower electrode 501A.
    An upper electrode 501B covers the assembly, extending both on the stacks 501D and on the insulating layer 540.
    The lower electrodes 501A may be formed by layer deposition through a mask, or, to obtain smaller dimensions according to (OX), by depositing a layer on the entire surface of the layer 540, and then lithography and etching.
    The stacks 501D can be made by layer deposition through a mask, for example a metal mask called "shadow mask". The size of each stack 501D along the axis (OX) is less than 20 μm, or even 10 μm. The upper electrode 501B is deposited directly on the layer 540, or directly on the stacks 501D, where they are present.
    According to an advantageous variant, it is deposited through a mask, in stride, and in the same pumping as the OLED deposit.
    In this configuration, the stacks 501D each extend above the array optical sensor, without overlapping the photodetectors 502. In other words, they extend only between two rows of photodetectors 502.
    In the example illustrated in FIG. 5, the repetition pitch of the OLEDs is greater than the pixel pitch, so that a single OLED for three pixels of the matrix optical sensor has been illustrated.
    In this way, they can be opaque without disturbing the detection, by the photodetectors, of a signal emitted by the OLEDs and backscattered on a human tissue having a papillary impression, for example a finger.
    Similarly, the lower electrode 501A may be opaque, and reflective, so that the OLEDs do not emit toward the substrate 530. The assembly is covered with a thin film encapsulation layer.
    In this example, the OLED control means are not integrated on the substrate 530.
    The electrodes are each connected to a metal connector disposed at the edge of the substrate, and a wire connection (not shown) connects these metal connectors to remote control means.
    In a variant, OLED driving transistors are integrated on the edge of the substrate 530, outside the detection surface, as detailed above.
    FIG. 6 illustrates a variant of the embodiment of FIG. 5, which will only be described for its differences with respect to FIG. 5. The reference numerals of FIG. 6 correspond to the reference numerals of FIG. 5, the first digit being replaced by a 6.
    Here, the stack 601C of organic semiconductor layers is common to all OLEDs, as shown in FIG.
    Each OLED is connected to a transistor 611 forming a driving unit, and integrated on the substrate 630. A connection extends through the insulating layer 650 to connect each transistor 611 to the lower electrode 601A of an OLED.
    Transistors 611 are formed on substrate 630 at the edge of the sensing surface.
    Alternatively, although it is less interesting from the point of view of space as explained above, one could also arrange the transistors at the center of the substrate.
    Each OLED is advantageously monochrome, that is to say configured to emit radiation with a spectral width of less than 80 nm, for example in blue, or in red, or in green.
    At least two OLEDs may be configured to transmit at respective wavelengths different from each other.
    FIG. 7A illustrates, in a view from above and schematically, an example of a fingerprint sensor 700 in which at least two OLEDs are configured to transmit at different respective wavelengths one of the other.
    A first type of OLED, denoted B, is configured to emit blue radiation at a wavelength between 400 and 495 nm.
    A second type of OLED, denoted R, is configured to emit red radiation at a wavelength between 620 and 750 nm.
    One can thus best characterize a sample having a papillary impression, by studying a radiation backscattered by this sample, and for several wavelengths preferably located in the visible. Indeed, the skin absorbs more or less depending on the wavelength. Here, the two wavelengths chosen are located substantially at both ends of the visible spectrum.
    Since red light propagates further into living tissue, so-called R-red OLEDs may be more spaced from each other than so-called blue-emitting OLEDs.
    In the example illustrated in FIG. 7A, all the OLEDs are of the same size and regularly spaced from one another. The OLEDs together form a periodic arrangement, with a multi-spectral elemental pattern comprising two OLEDs emitting in blue and an OLED emitting in red. Thus, the average repetition pitch of an OLED emitting in blue is less than the average repetition pitch of an OLED emitting in the red.
    According to a variant not shown, the different types of OLED, which differ in their emission wavelength, have an extent according to (OX) which depends on the central wavelength of emission. The shorter this wavelength, the smaller the range according to OX.
    FIG. 7A also shows schematically control units 711 each comprising a transistor.
    FIG. 7B illustrates a variant in which the fingerprint sensor 700 'comprises lighting means which have three types of OLEDs.
    A first type of OLED, denoted B, is configured to emit blue radiation at a wavelength between 400 and 495 nm.
    A second type of OLED, denoted G, is configured to emit radiation in the green, at a wavelength of between 495 and 570 nm, more particularly between 500 and 570 nm.
    A third type of OLED, denoted R, is configured to emit red radiation at a wavelength between 620 and 750 nm.
    OLEDs emitting in blue, in green, and in red together form a periodic arrangement, with a multi-spectral elementary pattern comprising two OLEDs of the first type (emitting in blue), an OLED of the second type (emitting in the green) and an OLED of the third type (emitting in the red).
    In particular, each OLED emitting in the blue which is framed by two OLEDs, is framed by an OLED emitting in the red and an OLED emitting in the green.
    Thus, the repetition pitch of OLEDs emitting in blue is still lower than that of other types of OLED (1 OLED out of 2 emits in blue, one in 4 emits in red, one in 4 emits in the green).
    One can imagine all kinds of variants, including variants including OLED emitting outside the visible spectrum, for example in the near infrared (between 700 and 950 nm) or the near ultraviolet (between 350 and 440 nm).
    Each OLED can be covered with a color filter, to refine a wavelength emitted in the direction of the papillary impression.
    An extension of the elementary units along the axis (OX) is preferably less than or equal to 10 mm, for example between 3 mm and 10 mm, or even between 3 mm and 5 mm.
    In operation, only OLEDs emitting at the same wavelength can be lit simultaneously.
    A scan can be performed so that each OLED is lit exactly once and turned off otherwise. Alternatively, series of several OLEDs are switched on simultaneously.
    OLEDs of different colors can be made in different ways.
    For example, the emission wavelength of an OLED is a function of the nature of the stack of corresponding organic semiconductor layers.
    After having structured the lower electrodes, the stacks of organic semiconductor layers of different natures are deposited successively through different masks. For example, a stack is deposited for an emission in blue, by masking the lower electrodes dedicated to the emission in the red and in the green. Then, we move the mask and deposit a stack for a red emission, masking the lower electrodes dedicated to the emission in blue and green. We do the same for the show in the green.
    In a variant, the emission wavelength of an OLED is a function of the nature of a spectral filter covering the upper electrode and forming an integral part of the OLED according to the invention.
    For example, after having structured the lower electrodes, a single stack of organic semiconductor layers is deposited for emission in the blank, and the whole is covered by the common upper electrode. Subsequently, successive filter layers are deposited and etched with respect to the lower electrodes. This technique is very precise, and makes it possible to produce monochromatic OLEDs of only a few microns according to (OX), the OLED then comprising the spectral filter covering the upper electrode.
    According to another variant, the emission wavelength of an OLED is a function of a supply voltage applied thereto.
    This variant is adapted to perform two types of OLEDs. After structuring the lower electrodes, a single stack of organic semiconductor layers is deposited which can have two central wavelengths of emission, and the whole is covered by the common upper electrode. Then, each OLED will emit in either wavelength depending on the voltage applied to the corresponding lower electrode. For example, it will emit green at 3 V, and blue for a voltage greater than 4 V. This technique also allows OLEDs to be made of only a few microns depending on (OX).
    The fingerprint sensor thus produced may be used to obtain an image of said imprint having an improved quality, relative to the images obtained according to the prior art.
    In particular, by switching on different combinations of OLEDs, we acquire a series of images that can be combined to overcome defects such as the effect of ambient lighting, pixel saturation, dirt on the sensor of the camera. fingerprints, etc.
    The fingerprint sensor according to the invention can also be used to discriminate a living tissue from an imitation, by calculating absorption and diffusion coefficients of an imaged sample, from at least one image acquired for at least one reason for switching on and off the OLEDs.
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    A papillary impression sensor (100; 300; 400; 500; 600; 700; 700 ') comprising, superimposed, a contact surface for applying the imprint to be imaged therein, a matrix optical sensor (120; 320), and illumination means, characterized in that the illumination means are arranged between said contact surface and a detection surface (125; 425) of the matrix optical sensor, and consist of a plurality of organic light-emitting diodes (101 401A, 401B; 701), said OLEDs, each OLED extending in one piece over more than one-third of a width (L1) of said detection surface, and the OLEDs extending together in one or more two sets of patterns parallel to each other distributed along the length (L2) of the detection surface.
    [2" id="c-fr-0002]
    2. Sensor (100; 300; 400; 500; 600; 700; 700 ') according to claim 1, characterized in that each OLED (101; 401A, 401B; 701) is connected to a control unit (111; 411A). , 411B; 611; 711), arranged to control the switching on and off of the OLED, an orthogonal projection of the control units in the plane of the detection surface (125; 425) being located outside the said detection surface.
    [3" id="c-fr-0003]
    A sensor (100; 300; 400; 500; 600; 700; 700 ') according to claim 1 or 2, characterized in that a distance (H1) between the array optical sensor (120; 320) and the surface of contact (106) is less than 25 μm.
    [4" id="c-fr-0004]
    A sensor (100; 300; 500; 600; 700; 700 ') according to any one of claims 1 to 3, characterized in that each OLED extending in one piece over more than 90% of the width (Ll) of said detection surface (125), the OLEDs extending together in a single series of patterns parallel to each other.
    [5" id="c-fr-0005]
    5. Sensor (700; 700 ') according to any one of claims 1 to 4, characterized in that the lighting means consist of OLED (701) of different types, which differ by the central wavelength of the light radiation that they are adapted to emit.
    [6" id="c-fr-0006]
    6. Sensor (700; 700 ') according to claim 5, characterized in that the OLEDs each comprise a spectral filter and share together a same organic semiconductor layer adapted to emit a multi-spectral radiation, and in this the different types OLEDs differ in the central wavelength of the transmission band of the spectral filter.
    [7" id="c-fr-0007]
    Sensor (700; 700 ') according to claim 5, characterized in that each OLED has two distinct emission central wavelengths, depending on the value of a bias voltage applied to it, and in that the different types of OLEDs differ in the polarization voltage provided by a control unit connected to the OLED.
    [8" id="c-fr-0008]
    8. Sensor (700) according to any one of claims 5 to 7, characterized in that the organic light-emitting diodes comprise at least a first type of organic light-emitting diode (701), adapted to emit a wavelength light radiation a central lower than 590 nm, and a second type of organic light-emitting diode (701), adapted to emit a light radiation of central wavelength greater than 600 nm.
    [9" id="c-fr-0009]
    9. Sensor (700 ') according to any one of claims 5 to 7, characterized in that the OLEDs comprise: »a first type of OLED (701), adapted to emit light of central wavelength included between 400 and 495 nm, * a second type of OLED (701), adapted to emit a light of central wavelength between 495 and 590 nm, and - a third type of OLED (701) adapted to emit light radiation with a central wavelength greater than 600 nm.
    [10" id="c-fr-0010]
    10. Sensor (700) according to any one of claims 5 to 9, characterized in that the OLED together form a periodic arrangement, with an elementary pattern comprising said several types of OLED (701).
    [11" id="c-fr-0011]
    11. Sensor (700) according to any one of claims 5 to 10, characterized in that the OLEDs (701) together form a periodic arrangement, with an elementary pattern such as the average repeat pitch of an OLED type. adapted to emit at a first wavelength is less than the average repetition rate of an OLED type adapted to emit at a second wavelength greater than the first wavelength.
    [12" id="c-fr-0012]
    The sensor (100; 300; 400; 500; 600; 700; 700 ') according to any one of claims 1 to 11, characterized in that each OLED (101; 401A, 401B; 701) has a band shape , the OLEDs forming bands parallel to each other.
    [13" id="c-fr-0013]
    13. Sensor (500) according to any one of claims 1 to 12, characterized in that each OLED extends above the optical array sensor, without overlapping the photosensitive areas (502) of the pixels of the matrix optical sensor.
    [14" id="c-fr-0014]
    14. The sensor (100; 300; 400; 600; 700; 700 ') according to any one of claims 1 to 12, characterized in that the OLEDs (101; 401A, 401B; 701) are transparent and extend above the matrix optical sensor (120; 320) by covering the photosensitive zones of the pixels of said sensor.
    [15" id="c-fr-0015]
    15. The sensor (100; 400; 600; 700; 700 ') according to any one of claims 1 to 14, characterized in that the OLEDs (101; 401A, 401B; 701) are regularly distributed along the length (L2). the detection surface of the matrix optical sensor, with a repetition pitch (PI) equal to the pixel pitch (P2) of the matrix optical sensor along said length.
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    同族专利:
    公开号 | 公开日
    US20190005296A1|2019-01-03|
    FR3046275B1|2018-12-07|
    US10719685B2|2020-07-21|
    EP3394792A1|2018-10-31|
    WO2017108881A1|2017-06-29|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    JP2003037708A|2001-07-25|2003-02-07|Casio Comput Co Ltd|Image authentication device|
    US20080317303A1|2007-06-25|2008-12-25|Hitachi, Ltd.|Imaging device and apparatus installed with the same|
    US20120256089A1|2011-04-06|2012-10-11|Seiko Epson Corporation|Sensing device and electronic apparatus|US10991751B2|2017-02-21|2021-04-27|Commissariat A L'energie Atomique Et Aux Energies Alternatives|Print sensor with gallium nitride LED|US20120321149A1|2011-05-17|2012-12-20|Carver John F|Fingerprint sensors|
    KR101376227B1|2013-09-17|2014-03-25|실리콘 디스플레이 |Optical fingerprint sensor|
    FR3016115B1|2014-01-06|2016-02-05|Commissariat Energie Atomique|CONTAINER INTERACTING WITH A REDUCED ENERGY CONSUMPTION USER BEFORE UNPACKING|
    FR3017952B1|2014-02-25|2016-05-06|Commissariat Energie Atomique|METHOD FOR DETERMINING A LIPID CONCENTRATION IN A MICROORGANISM|
    WO2017098758A1|2015-12-08|2017-06-15|コニカミノルタ株式会社|Optical fingerprint authentication device|
    FR3054696B1|2016-07-29|2019-05-17|Commissariat A L'energie Atomique Et Aux Energies Alternatives|THERMAL PATTERN SENSOR WITH MUTUALIZED HEATING ELEMENTS|
    FR3054697B1|2016-07-29|2019-08-30|Commissariat A L'energie Atomique Et Aux Energies Alternatives|METHOD OF CAPTURING THERMAL PATTERN WITH OPTIMIZED HEATING OF PIXELS|
    CN107092892B|2017-04-27|2020-01-17|上海天马微电子有限公司|Display panel and display device|FR3054698B1|2016-07-29|2018-09-28|Commissariat A L'energie Atomique Et Aux Energies Alternatives|ACTIVE THERMAL PATTERN SENSOR COMPRISING A PASSIVE MATRIX OF PIXELS|
    EP3885971A1|2020-03-24|2021-09-29|Imec VZW|A light emitter/sensor unit, a display, and a method for producing a display|
    法律状态:
    2016-12-29| PLFP| Fee payment|Year of fee payment: 2 |
    2017-06-30| PLSC| Publication of the preliminary search report|Effective date: 20170630 |
    2018-01-02| PLFP| Fee payment|Year of fee payment: 3 |
    2019-12-31| PLFP| Fee payment|Year of fee payment: 5 |
    2020-12-28| PLFP| Fee payment|Year of fee payment: 6 |
    2021-12-31| PLFP| Fee payment|Year of fee payment: 7 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1563178A|FR3046275B1|2015-12-23|2015-12-23|FOOT SENSOR WITH OLED LIGHTING|
    FR1563178|2015-12-23|FR1563178A| FR3046275B1|2015-12-23|2015-12-23|FOOT SENSOR WITH OLED LIGHTING|
    PCT/EP2016/082062| WO2017108881A1|2015-12-23|2016-12-21|Oled-illuminated print sensor|
    US16/064,759| US10719685B2|2015-12-23|2016-12-21|OLED-illuminated print sensor|
    EP16812966.6A| EP3394792A1|2015-12-23|2016-12-21|Oled-illuminated print sensor|
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