• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a high-pass infrared plasmonic filter (1) comprising, through a copper layer (3) interposed between two layers of a dielectric material, a matrix of patterns (9) made of the dielectric material, each pattern being in the shape of a Greek cross, the arms (11, 13) of adjacent patterns being collinear, the ratio of the width (B) to the length (A) of each arm being between 0.3 and 0.6, and the distance (D) separating the ends facing adjacent pattern arms being less than 10 nm.
    公开号:FR3044431A1
    申请号:FR1561454
    申请日:2015-11-27
    公开日:2017-06-02
    发明作者:Desprolet Romain Girard；Sandrine Lhostis；Salim Boutami
    申请人:Commissariat a lEnergie Atomique CEA；STMicroelectronics SA；STMicroelectronics Crolles 2 SAS；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    PLASMON FILTER
    Field
    The present application relates to a high-pass type plasmonic filter adapted to pass infrared light and block visible light.
    Presentation of the prior art
    The plasmonic filters comprise a pattern of a dielectric material extending through a metal layer or vice versa, the pattern being generally repeated periodically in this layer.
    The patent application WO 2010/029097 describes an example of a plasmonic filter comprising a crucifome pattern of a dielectric material periodically repeated in a metal layer. This filter is narrow bandpass type, that is to say that the range of wavelengths for which the filter passes more than 50% of the light received has a width of less than a hundred nanometers.
    In certain applications, particularly in the field of image sensors, when it is desired to make a high-pass filter blocking visible light and allowing infrared light to pass, a layer of a material, commonly called black resin, is used. absorbing visible light and transparent to infrared light. However, the use of black resin poses various problems, in particular because the black resin degrades when it is subjected to temperatures higher than 250 ° C., which makes it difficult, once the deposition of the black resin has been carried out, to realization of other structures that involve heat treatments. In addition, it is difficult to delimit black resin on small areas corresponding to elementary pixels.
    It would therefore be desirable to have a high-pass filter permitting infra-red light and blocking visible light, not using a black resin-type absorbent layer. summary
    Thus, one embodiment provides an infrared high-pass plasmonic filter comprising, through a copper layer sandwiched between two layers of a dielectric material, a pattern matrix of the dielectric material, each pattern being in the form of Greek cross, the arms of adjacent patterns being collinear, the ratio of the width to the length of each arm being between 0.3 and 0.6, and the distance separating the opposite ends of arms from adjacent patterns being less than 10 nm.
    According to one embodiment, the thickness of the copper layer is between 50 and 500 nm.
    According to one embodiment, the optical index of the dielectric material is between 1.3 and 2.3.
    According to one embodiment, the dielectric material is silicon nitride.
    According to one embodiment, the length of the arms is between 70 and 195 nm.
    According to one embodiment, the distance is between 3 and 7 nm.
    According to one embodiment, the ratio is between 0.35 and 0.55.
    Another embodiment provides an image sensor comprising, in and on a semiconductor layer portion, at least a first pixel for receiving visible light and at least a second pixel for receiving infrared light, each pixel being surmounted by a bandpass filter band in the visible and each second pixel being surmounted by a high-pass infrared plasmonic filter as mentioned above.
    Brief description of the drawings
    These and other features and advantages will be set forth in detail in the following description of particular embodiments in a nonlimiting manner with reference to the accompanying figures in which: FIGS. 1A and 1B schematically show an embodiment of FIG. a high-pass plasmonic filter in the infrared; FIGS. 2 to 5 illustrate the normalized transmission rate as a function of the wavelength for filters of the type of that of FIGS. 1A and 1B; and FIG. 6 schematically represents an example of a device comprising a filter of the type of that of FIGS. 1A and 1B.
    detailed description
    The same elements have been designated by the same references in the various figures which, moreover, are not drawn to scale. For the sake of clarity, only the elements that are useful for understanding the described embodiments have been shown and are detailed.
    In the description which follows, the terms "upper" and "lower" refer to the orientation of the elements concerned in the corresponding figures. Unless otherwise specified, the term "in the order of" and the terms "substantially" and "about" mean within 10%, preferably within 5%.
    Figures 1A and 1B schematically represent a portion of a high-pass infrared plasmonic filter. Fig. 1A is a sectional and perspective view, and Fig. 1B is a top view.
    The filter 1 comprises a copper layer 3 interposed between two layers 5 and 7 of a dielectric material (not shown in FIG. 1B). Copper layer 3 is traversed throughout its thickness by patterns 9 preferably made of the same dielectric material as layers 5 and 7. Each pattern 9 has the shape of a Greek cross, that is to say of a cross comprising two arms 11 and 13 orthogonal, respectively of length A and width B, these two arms intersecting at their centers so as to define four branches having substantially the same dimensions. The patterns 9 are periodically arranged in the layer 3, in a period P, so as to form a matrix of patterns 9 in which the arms 11 of the patterns 9 of the same column are collinear and the arms 13 of the patterns 9 of a same line are collinear. Thus, the arms 11 of adjacent patterns 9 of the same column have ends facing each other and the arms 13 of adjacent patterns 9 of the same line have ends facing each other. In other words, the arms 11 and 13 are respectively aligned with other arms 11 and 13. A distance D, equal to the period P minus the length A of the arms 11 and 13, separates the ends with respect to screw arms 11 and 13 of adjacent patterns 9.
    It has been previously seen that a plasmonic filter comprising cruciform patterns of a dielectric material in a metal layer as described in the patent application WO 2010/029097 is of the band-pass type.
    The inventors have demonstrated that the filter of FIGS. 1A and 1B can be a high-pass filter in the infrared if one places oneself under the following conditions: the metal layer 3 is made of copper and preferably has a thickness between At 50 and 500 nm, the optical index of the dielectric material of the layers 5 and 7 and the units 9 is preferably between 1.3 and 2.3, the distance D is less than or equal to 10 nm, and the ratio B / A of the width B of the arms on their length A is between 0.3 and 0.6.
    The fact that layer 3 is a copper layer is a characteristic of the filter described here. Indeed, the absorption of copper, especially copper plasmons, is strong in the visible and low in the infrared.
    The aforementioned conditions for the filter of FIGS. 1A and 1B to be a high-pass filter in the infrared will now be explained in relation with FIGS. 2 to 5. These figures represent curves illustrating the influence of the parameters A, B, D and P and the optical index n of the dielectric material of the patterns 9 and layers 5 and 7 on the normalized transmission rate of a filter of the type of that of Figures IA and IB. Unless otherwise indicated, the filters used to obtain the curves of FIGS. 2 to 5 have patterns 9 and layers 5 and 7 made of silicon nitride, a copper layer 3 with a thickness of 150 nm, a period P equal to 150 nm, and arms 11 and 13 of width B equal to 65 nm and length A equal to 145 nm.
    FIG. 2 represents four curves 21, 23, 25 and 27 illustrating, for plasmonic filters of the type of that of FIGS. 1A and 1B, the normalized transmission rate T as a function of the wavelength λ for various values of the distance D.
    Curve 21 corresponds to a filter in which D = 5 nm (A = 145 nm and B / A = 0.45). For wavelengths between about 380 and 780 nm, the normalized transmission rate T is less than 0.2. From a wavelength substantially equal to 800 nm, T becomes greater than 0.5. This wavelength corresponds to the cut-off wavelength of the filter. For wavelengths greater than the cut-off wavelength, T is greater than 0.6. In particular, between 900 nm and 2000 nm, T is substantially equal to 0.75.
    Curve 23 corresponds to a filter in which D = 10 nm (A = 135 nm and B / A = 0.48). Like the filter of the curve 21, the filter of the curve 23 has a normalized transmission rate T less than 0.2 for wavelengths of about 380 and 780 nm, and a cut-off wavelength substantially equal to 800 nm. In contrast, T remains greater than 0.5 only for wavelengths between the cut-off wavelength and about 1700 nm. More particularly, at about 900 to 1500 nm, T is greater than 0.6.
    Curve 25 corresponds to a filter in which D = 15 nm (A = 125 nm and B / A = 0.52). The normalized transmission rate T is greater than 0.5 for a wavelength range extending from 850 to 1100 nm only, and for most wavelengths greater than 1100 nm, T is less than 0 4.
    Curve 27 corresponds to a filter in which D = 20 nm (A = 115 nm and B / A = 0.56). The filter of curve 27 has a normalized transmission rate T greater than 0.5 for a wavelength range extending from 850 to 1000 nm only, and for most wavelengths greater than 1000 nm , T is less than 0.3.
    Thus, a filter of the type of that of FIGS. 1A and 1B constitutes a high-pass filter in the infrared when D is less than or equal to 10 nm (curves 23 and 21), preferably when D is of the order of 5. nm (curve 21). On the other hand, a filter of the type of that of FIGS. 1A and 1B is not a high-pass filter in the infrared when D is greater than 10 nm (curves 25 and 27).
    FIG. 3 represents four curves 31, 33, 35 and 37 illustrating, for plasmonic filters of the type of that of FIGS. 1A and 1B, the normalized transmission rate T as a function of the wavelength λ for various lengths A of the arms 11 and 13. More particularly, the curves 31, 33, 35 and 37 correspond to filters in which the length A is equal to 145 nm, 135 nm, 125 nm and 115 nm respectively, the period P is equal to 150 nm, 140 nm, 130 nm and 120 nm respectively, and the ratio B / A is equal to 0.45, 0.48, 0.52 and 0.56 respectively. As can be seen in FIG. 3, the curves 33, 35 and 37 have substantially the same shape as the curve 31 which corresponds to the curve 21 of FIG.
    Thus, in a filter of the type of that of FIGS. 1A and 1B, the length of the arms 11 and 13 of the patterns 9 has little or no influence on the response of the filter which remains of the high-pass type in the infrared since that we place ourselves in the conditions mentioned above.
    FIG. 4 represents six curves 40, 41, 43, 45, 47 and 49 illustrating, for plasmonic filters of the type of those of FIGS. 1A and 1B, the normalized transmission rate T as a function of the wavelength λ for various values of the ratio B / A of the width B over the length A of the arms 11 and 13 of the cruciform patterns 9. The curves 40, 41, 43, 45, 47 correspond to filters in which the ratio B / A is equal to 0 , 86, 0.72, 0.59, 0.45, 0.31 and 0.17, respectively, that is to say here that the width B of arms 11 and 13 is equal to 125 nm, 105 nm , 85 nm, 65 nm, 45 nm, and 25 nm respectively.
    The filters corresponding to the curves 40 and 41 (B / A greater than 0.6) have respective normalized transmission rates T greater than 0.6 and 0.3 for wavelengths less than 700 nm. These filters therefore let a large part of the visible light received pass.
    The filter corresponding to curve 49 (B / A less than 0.3) has a normalized transmission rate T less than 0.5 for wavelengths longer than 1000 nm. This filter therefore blocks a large part of the received infrared light and is not suitable for use as a high-pass filter in the infrared.
    The filters corresponding to the curves 43, 45 and 47, for which B / A is equal to 0.59, 0, 45 and 0.31 respectively, constitute high-pass filters in the infrared. More particularly, for the filter corresponding to the curve 43, the normalized transmission rate T is less than 0.2 between about 380 and 750 nm, the cut-off wavelength is about 780 nm, and T is substantially constant and 0.8 between 800 and 2000 nm. The filter corresponding to the curve 45 is the same as the filter corresponding to the curve 21 of FIG. 2 and the curves 45 and 21 are similar. For the filter corresponding to the curve 47, T is less than 0.1 between about 380 and 750 nm, the cutoff wavelength is about 850 nm, and T is substantially constant and equal to 0.55 between 850 and 2000. nm.
    Thus, a filter of the type of FIGS. 1A and 1B constitutes a high-pass filter in the infrared when the ratio B / A is between 0.3 and 0.6, the characteristics of this filter being better when B / A is between 0.35 and 0.55, for example equal to 0.45 (curve 45). In addition, it can be seen that the cut-off wavelength of such a filter increases when the ratio B / A decreases.
    FIG. 5 represents four curves 51, 53, 55 and 57 illustrating, for plasmonic filters of the type of that of FIGS. 1A and 1B, the normalized transmission rate T as a function of the wavelength λ for various values of the optical index n of the dielectric material of the patterns 9 and of the layers 5 and 7. The curves 51, 53, 55 and 57 correspond to filters for which the optical index n of this material is equal to 1, 1.5, 2 and 2.5 respectively, the filter corresponding to the curve 55 being the same as that corresponding to the curve 21 of Figure 2.
    The filter corresponding to curve 51 has a cut-off wavelength of 600 nm but a normalized transmission rate T less than 0.5 for infrared wavelengths longer than 900 nm.
    The filter corresponding to curve 57 has a cut-off wavelength of about 1000 nm. The normalized transmission rate T of this filter is greater than 0.5 for wavelengths greater than the cut-off wavelength. However, T is highly variable for wavelengths greater than the cut-off wavelength.
    The filter corresponding to the curve 53 has a cut-off wavelength of about 700 nm, a nominated transmission rate T of less than 0.2 for wavelengths shorter than the cut-off wavelength, and a rate of T greater than 0.5 for wavelengths between the cut-off wavelength and 1900 nm. This filter is therefore suitable for use as a high-pass filter in the infrared.
    The filter corresponding to the curve 55 has a cut-off wavelength of approximately 800 nm, a normalized transmission rate T of less than 0.2 for wavelengths shorter than the cut-off wavelength, and a rate of T greater than 0.6 for wavelengths greater than the cut-off wavelength.
    Thus, for a filter of the type of FIGS. 1A and 1B to constitute a high-pass filter in the infrared, a dielectric material whose optical index n is between 1.3 and 2 is preferably chosen. 3. Silicon nitride whose optical index n is substantially equal to 2 can be chosen as the dielectric material. By way of example of dimensions, in an infrared high-pass filter of the type shown in FIGS. 1A and 1B: the thickness of the copper layer 3 is between 50 and 500 nm, for example equal to 150 nm, the period P can be between 75 and 200 nm, for example equal to 150 nm, for D equal to 5 nm, the length A of the arms 11 and 13 may be between 70 and 195 nm, for example equal to 145 nm, and the width B of the arms may be between 45 and 85 nm, for example equal to 65 nm, when A is 145 nm, and between 35 and 65 nm, for example 45 nm, when A is 110 nm.
    More particularly, among the various filters studied, the filter constituting the best high-pass filter in the infrared is that of the curves 21, 31, 45 and 55 of Figures 2, 3, 4 and 5 respectively. In such a filter: the dielectric material of the patterns 9 and curves 5 and 7, for example silicon nitride, has an optical index of between 1.3 and 2.3, the width B of the arms 11 and 13, for example equal to 65 nm when the length A is equal to 145 nm, is such that the ratio B / A is between 0.35 and 0.55, and - the distance D is of the order of 5 nm, c that is to say between 3 and 7 nm.
    The plasmonic filter of FIGS. 1A and 1B can be made by a damascene method. A layer of dielectric material whose thickness corresponds to that of the layer 5 plus that of the patterns 9 is formed. This layer is etched at the locations where it is desired to form the copper layer 3. Copper is deposited and then removed to the dielectric material by etching so as to leave in place the copper layer 3 flat surface. The layer 7 of the dielectric material is then deposited.
    An example of application of a plasmonic filter of the type of that of Figures IA and IB will now be described.
    Fig. 6 is a sectional view schematically showing an example of an image sensor comprising an infrared high pass plasmonic filter of the type of that of Figs. 1A and 1B.
    The image sensor 61 comprises, in and on a portion of a semiconductor layer 63, for example a silicon substrate, a matrix 65 of pixels 65R, 65G, 65B intended to
    receive visible light, and a matrix 67 67IR pixels for receiving infrared light. The pixels 65R, 65G and 65B are for example intended to receive visible light respectively red, green and blue and can be arranged according to a Bayer network. Although, in this example, the pixel matrix 65 and the pixel matrix 67 are disjoint, the two pixel matrices 65 and 67 can also constitute a single matrix, the 67IR pixels can then be regularly arranged between the 65R pixels. , 65G and 65B. Each pixel 65R, 65G, 65B and 67IR is surmounted by a filter 69R, 69G, 69B and 69IR respectively. The filters 69R, 69G, 69B may be band-pass plasmon filters, for example filters of the type of those of the patent application WO 2010/029097, adapted to allow the visible light to pass, for example light respectively red, green and blue. The filters 69R comprise a metal layer 71 interposed between two layers 73 and 75 of a dielectric material, the metal layer 71 being traversed throughout its thickness by a hole filled with the dielectric material, the hole being able to be repeated periodically in the metal layer 71 The filters 69G, 69B are for example similar to the filters 69R with the difference that the dimensions of the hole or holes are chosen according to the light that these filters passes. The filters 69IR are plasmonic filters of the type of those of FIGS. 1A and 1B, each comprising a copper layer 3 interposed between two layers 5 and 7 of a dielectric material and a periodic cruciform pattern extending through the entire thickness of 3. The pattern dimensions and repetition pattern period P are chosen so that the 69IR filters are high pass filters in the infrared.
    In operation, the image sensor receives light from the side of the coated semiconductor layer of filters 69R, 69G, 69B and 69IR. For example, the metal layer 71 may be aluminum, gold, silver or copper. In the case where the layer 71 is made of copper, the layers 71 and 3 may correspond to portions of the same layer of copper. The dielectric material of the layers 73 and 75 may be different from that of the layers 5 and 7, for example silicon oxide. The dielectric material of the layers 73 and 75 may also be the same as that of the layers 5 and 7. In the latter case, the layers 73 and 5 may correspond to portions of the same layer, and / or the layers 7 and 75 can correspond to portions of the same layer.
    Thus, only the red light passes through the filters 69R and reaches the pixels 65R. In the same way, only the blue light reaches the pixels 65B, only the green light reaches the 65G pixels and only the infrared light reaches the 67IR pixels.
    An advantage of such a sensor is that the pixels intended to receive the visible light and the pixels intended to receive the infrared light are produced in and on the same portion of the semiconductor layer, that is to say in and on the same integrated circuit chip.
    Another advantage of the sensor is that the high-pass filter in the infrared is not made by black resin which simplifies the manufacturing steps of this infrared filter. In particular, manufacturing steps requiring heat treatments at temperatures above 250 ° C can be performed after the 69IR filters have been manufactured. In addition, it is possible to define the infrared filters 69IR on small areas corresponding to the 67IR pixels, which makes it possible, in particular, when the 67IR pixels are regularly arranged among the pixels 65R, 65G and 65B, to simplify the manufacture of the filters 69IR relative to in case black resin is used.
    Another advantage of the sensor is that the filters 69R, 69B, 69G and 69IR are manufactured by successive steps of etching and deposition of metal and insulating layers commonly used in CMOS technologies. In addition, when the filters 69R, 69G, 69B and 69IR are of the same materials, they can be manufactured simultaneously which simplifies the manufacturing process of the sensor.
    Particular embodiments have been described. Various variations and modifications will be apparent to those skilled in the art. In particular, those skilled in the art will be able to adapt the dimensions of the patterns 9 and of the layers 3, 5 and 7, the material of the layers 5 and 7, and the period P so as to modify the cut-off wavelength, the rate T in the visible, the rate T for wavelengths greater than the cut-off wavelength, and the range of the wavelength range in which the filter is passing (T greater than or equal to 0, 5).
    The high-pass infrared plasmonic filter described above can be used in an image sensor comprising only pixels intended to receive infrared light, or more generally in other devices where it is desired to carry out a filtering high pass in the infrared.
    权利要求:
    Claims (8)
    [1" id="c-fr-0001]
    1. An infrared high-pass plasmonic filter (1) comprising, through a copper layer (3) interposed between two layers (5, 7) of a dielectric material, a matrix of patterns (9) made of the material dielectric, each pattern being in the form of a Greek cross, the arms (11, 13) of adjacent patterns being collinear, the ratio (B / A) of the width (B) to the length (A) of each arm being between 0 , 3 and 0.6, and the distance (D) separating the ends facing arm adjacent patterns being less than 10 nm.
    [2" id="c-fr-0002]
    2. Plasmon filter according to claim 1, wherein the thickness of the copper layer (3) is between 50 and 500 nm.
    [3" id="c-fr-0003]
    3. The plasmonic filter according to claim 1 or 2, wherein the optical index (n) of said dielectric material is between 1.3 and 2.3.
    [4" id="c-fr-0004]
    4. Plasmon filter according to any one of claims 1 to 3, wherein the dielectric material is silicon nitride.
    [5" id="c-fr-0005]
    5. Plasmon filter according to any one of claims 1 to 4, wherein the length (A) of the arms (11, 13) is between 70 and 195 nm.
    [6" id="c-fr-0006]
    6. The plasmonic filter according to any one of claims 1 to 5, wherein said distance (D) is between 3 and 7 nm.
    [7" id="c-fr-0007]
    The plasmonic filter according to any one of claims 1 to 6, wherein said ratio (B / A) is between 0.35 and 0.55.
    [8" id="c-fr-0008]
    An image sensor comprising, in and on a semiconductor layer portion, at least a first pixel (65R, 65B, 65G) for receiving visible light and at least one second (67RR) pixel for receiving light. infrared light, each first pixel being surmounted by a bandpass filter in the visible region (69R, 69B, 69G) and each second pixel being surmounted by a plasmonic filter (69IR) according to any one of claims 1 to 7 .
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1561454|2015-11-27|
    FR1561454A|FR3044431B1|2015-11-27|2015-11-27|PLASMON FILTER|FR1561454A| FR3044431B1|2015-11-27|2015-11-27|PLASMON FILTER|
    US15/357,871| US9810823B2|2015-11-27|2016-11-21|Plasmonic filter|
    EP16200330.5A| EP3173829A1|2015-11-27|2016-11-23|Plasmonic filter|
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