• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a method of manufacturing an electronic device (30) comprising a film (32) comprising the steps of: forming at least one layer of a solution comprising a solvent and a compound comprising a polymer selected from group comprising poly (vinylidene trifluoroethylene fluoride - chlorofluoroethylene) (P (VDF-TrFE-CFE)), poly (vinylidene fluoride - trifluoroethylene - chlorotrifluoroethylene) (P (VDF-TrFE-CTFE)) and a mixture of these compounds, the chlorine content in molecules of the copolymer being greater than or equal to 3%; and irradiating at least the layer with pulses of at least one ultraviolet radiation.
    公开号:FR3043836A1
    申请号:FR1561045
    申请日:2015-11-17
    公开日:2017-05-19
    发明作者:Abdelkader Aliane；Mohammed Benwadih
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Field
    The present application relates to a method of manufacturing an electronic device comprising a film of a polyvinylidene fluoride (PVDF) copolymer and an electronic device obtained by such a method.
    Presentation of the prior art
    It is known to produce an electronic device comprising a film of a PVDF copolymer. According to one example, the electronic device corresponds to a metal-oxide gate field effect transistor, also called MOS transistor, the film of the PVDF copolymer forming the gate insulator of the transistor. According to another example, the electronic device corresponds to a pyroelectric and / or piezoelectric device that can be used as a sensor, for example as a pressure sensor, as a switch or as a device for energy recovery.
    The PVDF copolymers are semi-crystalline polymers which, after the polymerization stage, have a degree of crystallinity that is generally between 45% and 55%. The PVDF copolymer may comprise crystalline phases of three types α, β and y. After the polymerization step, the crystalline phase obtained is generally in the majority phase a. The electrical insulation properties of the resulting film are generally not suitable for use as a gate insulator of a MOS transistor. In addition, the β phase may have pyroelectric and piezoelectric properties while phase a does not. As a result, the film obtained after polymerization is not suitable for use in a pyroelectric and / or piezoelectric device.
    An additional treatment must then generally be provided to convert at least part of the phase a to β phase, which provides the desired electrical insulation properties, pyroelectric properties and / or piezoelectric properties. The treatment may further cause an increase in the crystallinity of the film.
    This treatment may comprise: thermal annealing, for example at a temperature of between 110 ° C. and 170 ° C. for a time varying from several minutes to several hours; the application to the film of an electric field of high intensity for several hours; and / or ionizing the air around the film of the PVDF copolymer.
    It may be desirable to form the PVDF copolymer film on a substrate of plastic material, for example polyethylene naphthalate (PEN) or polyethylene terephthalate (PET). It may further be desirable to form the film of the PVDF copolymer on a substrate on which or in which other electronic components are also made.
    A disadvantage of the treatments described above is that they may not be compatible with the use of a plastic substrate or with the formation of electronic components, in particular because of the high temperatures and / or applied mechanical stresses. Another disadvantage of mechanical stretching treatments of the polymer, application of an electric field or ionization of air is that they can be complex to implement, especially on an industrial scale. Another disadvantage of thermal annealing and application of an electric field is that they can have a significant duration. summary
    One embodiment aims to overcome the disadvantages of the manufacturing processes of the electronic devices described above.
    Another embodiment is directed to the manufacture of an electronic device comprising a film of a PVDF copolymer on a plastic substrate.
    Another embodiment is directed to the manufacture of an electronic device comprising a film of a PVDF copolymer on a substrate on which or in which other electronic components are also formed.
    Another embodiment aims at reducing the duration of the manufacturing process of an electronic device comprising a film of a PVDF copolymer.
    Another embodiment is a manufacturing method that can be implemented on an industrial scale.
    Thus, an embodiment provides a method of manufacturing an electronic device comprising a film comprising the steps of: forming at least one layer of a solution comprising a solvent and a compound comprising a polymer selected from the group consisting of poly (vinylidene fluoride - trifluoroethylene - chlorofluoroethylene)), poly (vinylidene fluoride - trifluoroethylene - chlorotrifluoroethylene)) and a mixture of these compounds, the chlorine content in molecules of the copolymer being greater than or equal to 3%; and irradiating at least the layer with pulses of at least one ultraviolet radiation.
    According to one embodiment, the ultraviolet radiation is emitted by a source, said layer comprising a face exposed to ultraviolet radiation and the distance between said face and the source is between 2 cm and 10 cm.
    According to one embodiment, the duration of each pulse is between 500 ps and 2 ms.
    According to one embodiment, the energy fluence of ultraviolet radiation is between 10 J / cm 2 and 25 J / cm 2.
    According to one embodiment, only a portion of the layer is heated during the irradiation step.
    According to one embodiment, the irradiation step is followed by a thermal annealing step of the rest of the layer at a temperature between 80 ° C and 120 ° C.
    According to one embodiment, the solvent has an evaporation temperature of between 110 ° C. and 140 ° C.
    According to one embodiment, the solution comprises from 80% to 95% by weight of the solvent and from 5% to 20% by weight of the compound.
    According to one embodiment, the solvent is adapted to at least partially absorb the ultraviolet radiation.
    According to one embodiment, the compound further comprises ceramic particles.
    One embodiment also provides a piezoelectric and / or pyroelectric device comprising a layer comprising in majority a partially crystallized polymer chosen from the group comprising poly (vinylidene fluoride-trifluoroethylene-chlorofluoroethylene), polyvinylidene fluoride-trifluoroethylene - chlorotrifluoroethylene)) and a mixture of these compounds, the level of chlorine molecules of the copolymer being greater than or equal to 3%, wherein on at least a portion of the thickness of the layer, the crystalline phase or the crystalline phases of the polymer have the same crystallographic orientation.
    According to one embodiment, the layer comprises a first sublayer of said crystallized polymer in which the crystalline phase or the crystalline phases of the polymer have the same crystallographic orientation and a second sublayer of said polymer covered by the first underlayer and at contact of the first sub-layer in which the crystalline phase or the crystalline phases of the polymer have different crystallographic orientations.
    Brief description of the drawings
    These and other features and advantages will be set forth in detail in the following description of particular embodiments in a nonlimiting manner in connection with the accompanying figures, in which: FIGS. 1 and 2 show ray diffraction patterns X respectively obtained for films of a PVDF copolymer produced respectively according to a conventional manufacturing process and according to an embodiment of a manufacturing process; FIG. 3 represents evolution curves of the relative dielectric permittivity of films of a PVDF copolymer, respectively produced according to a conventional manufacturing method and according to one embodiment of a manufacturing method, as a function of the frequency of the voltage applied to the film; FIG. 4 shows evolution curves of the displacement of films of a PVDF copolymer, produced respectively according to a conventional manufacturing method and according to one embodiment of a manufacturing method, as a function of the tension applied to the film; FIGS. 5A to 5E are partial and schematic sections of structures obtained at successive stages of an embodiment of a method for manufacturing a MOS transistor comprising a film of a PVDF copolymer; and FIGS. 6A to 6D are partial and schematic sections of structures obtained at successive steps of an embodiment of a method for manufacturing a pyroelectric / piezoelectric device comprising a film of a PVDF copolymer.
    detailed description
    For the sake of clarity, the same elements have been designated by the same references in the various figures and, moreover, as is customary in the representation of the electronic circuits, the various figures are not drawn to scale. In addition, only the elements useful for understanding the present description have been shown and are described. Unless otherwise specified, the terms "approximately", "substantially", and "of the order of" mean within 10%, preferably within 5%.
    The inventors have demonstrated that by selecting particular copolymers of PVDF and by applying to them a particular heat treatment, a PVDF copolymer film having high piezoelectric and / or pyroelectric properties and / or a high dielectric constant is obtained.
    The PVDF copolymer comprises poly (vinylidene fluoride - trifluoroethylene - chlorofluoroethylene) (P (VDF - TrFE - CFE)), poly (vinylidene fluoride - trifluoroethylene - chlorotrifluoroethylene) (P (VDF - TrFE - CTFE)) or a mixture of these compounds. The chlorine content in molecules of the copolymer is greater than or equal to 3%, preferably greater than or equal to 4%.
    According to one embodiment, the heat treatment comprises the application of short pulses of ultraviolet (UV) radiation, or ultraviolet flashes, on a liquid layer comprising in majority the PVDF copolymer. This makes it possible to heat the liquid layer to promote the formation of the β crystalline phase. This makes it possible to locally heat the liquid layer without heating the substrate on which the layer comprising the PVDF copolymer is formed and / or without heating the electronic components adjacent to the film of the PVDF copolymer. A film of the PVDF copolymer having desired properties is thus obtained.
    By UV radiation is meant radiation whose wavelengths are, at least in part, between 200 nm and 400 nm. The UV radiation can be provided by a lamp, for example a Xenon lamp which can provide radiation which extends over a wavelength range wider than the range of 200 nm to 400 nm, for example over the range of 150 nm to 1000 nm. The distance between the emission source of the UV pulses and the face of the layer comprising predominantly the PVDF copolymer is between 2 cm and 10 cm. According to one embodiment, the duration of a UV pulse is between 10 μs and 5 ms, preferably between 500 μs and 2 ms. The duration between two successive UV pulses can be between 1 and 5 seconds. The fluence of the radiation (UV) may range from 1 J / cm 2 to 100 J / cm 2, preferably from 10 J / cm 2 to 25 J / cm 2. The number of pulses is between 1 and 100.
    Attempts have been made to compare the properties of a film of a PVDF copolymer, hereinafter referred to as a comparison film, obtained by a manufacturing method comprising a thermal annealing step by a long-term heating of the film and the properties of a film of a PVDF copolymer, hereinafter called test film, obtained by a manufacturing method comprising a step of applying UV pulses.
    The comparison film and the test film were each obtained from a 2 μm thick liquid layer formed by screen printing of a solution comprising 20% by weight of the copolymer P (VDF 600-TrITe). CTFE9,7) and 80% by weight of cyclopentanone. The solution was obtained by mixing 2 g of cyclopentanone and 0.4 g of P (VDF 4 TrFe 3 O, 3-CTFEc 7) powder at a temperature between 40 and 45 ° C for several hours. For the comparison film, the heated layer was deposited on a hot plate at 130 ° C for 15 minutes. For the test film, the layer was irradiated with 20 UV pulses provided by a UV lamp having radiation over a wavelength range that extends from 240 nm to 1000 nm, with more than 75% of the energy between 240 nm and 400 nm. The duration of each pulse was 2 ms. The duration between two successive pulses was 1 second. The energy fluence of UV radiation was 21 J / cm 2. The distance between the UV lamp and the top face of the PVDF copolymer layer was 4.5 cm.
    Figure 1 shows an X-ray diffraction pattern of the comparison film. The curve comprises several peaks of crystallization, in particular a peak P] _ for an angle 2θ] _ substantially equal to 18 °, a peak P2 of greater intensity for a 2Θ2 angle substantially equal to 22 °, a peak P3 intensity reduced for an angle 2Θ3 substantially equal to 34 °, and additional peaks at angles 2Θ greater than 2Θ3 and at lower intensities. This reflects the presence of β crystalline phases in the comparison film having different crystallographic orientations.
    Figure 2 shows an X-ray diffraction pattern of the test film. The curve C2 comprises a single peak P '] _ for the angle θ2 substantially equal to 18 °. This reflects the presence of a β crystalline phase in the test film having a single crystallographic orientation. The crystallinity level of the comparison film is strictly greater than the crystallinity level of the test film.
    The inventors have demonstrated that for the other copolymers of PVDF other than the polymers of the group comprising P (VDF-TrFE-CFE), P (VDF-TrFE-CTFE) or a mixture of these compounds, the diffraction pattern the X-ray of the test film was substantially identical to the X-ray diffraction pattern of the test film.
    The inventors have demonstrated an increase in the relative dielectric relative density εΓ with respect to the vacuum, also called the dielectric constant, of the test film relative to the comparison film.
    FIG. 3 represents evolution curves D 1 and D 2 of the relative dielectric permittivity εΓ, also called the dielectric constant, of the comparison film and of the test film as a function of frequency, respectively. The measurement of the relative dielectric pennittivity εΓ has been carried out by placing each film between two electrodes between which a sinusoidal voltage is applied. The relative dielectric permittivity εΓ of the test film is greater than the relative dielectric permittivity of the comparison film for frequencies below 5.10 ^ Hz. In particular, for frequencies below 100 Hz, the increase in the relative dielectric permittivity is at least 15%. For P (VDF-TrEE-CTFE), the dielectric constant at less than 10 Hz is greater than or equal to 55. For P (VDF-TrFE-CFE), the dielectric constant at less than 10 Hz is greater than or equal to 65.
    The inventors have demonstrated an increase in the piezoelectric and / or pyroelectric activity of a comparison film with respect to the test film.
    FIG. 4 represents evolution curves E 1 and E 2 of the displacement, expressed in arbitrary units, respectively of the comparison film and of the test film as a function of the tension applied to the film. The displacement measurement was carried out by placing each film between two electrodes between which the control voltage is applied. The inventors have demonstrated an increase of more than 50% in the displacement of the test film relative to the comparison film.
    FIGS. 5A to 5E illustrate an embodiment of a method of manufacturing an electronic device comprising a MOS transistor whose gate insulator is formed by a film of a PVDF copolymer.
    FIG. 5A is a partial and schematic sectional view of the structure obtained after forming, on a substrate 10, first and second electrically conductive portions 12, 14. The thickness of the substrate 10 can be between 5 μm and 1000 μm. . The substrate 10 may be a rigid substrate or a flexible substrate. A flexible substrate may, under the action of an external force, deflate, including bending, without breaking or tearing. An example of a rigid substrate comprises a substrate made of silicon, germanium or glass. Preferably, the substrate 12 is a flexible film. An example of a flexible substrate comprises a film made of PEN (polyethylene naphthalate), PET (polyethylene terephthalate), PI (polyimide) or PEEK (polyetheretherketone). Preferably, the substrate 10 may have a thickness of 10 μm to 300 μm and exhibit flexible behavior.
    Each conductive portion 12, 14 may be made of a metallic material selected from the group consisting of silver, gold, nickel, platinum, aluminum, titanium, copper, tungsten and an alloy or a mixture at least two of these metals, or a conductive polymer, for example poly (3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT: PSS). Each conductive portion 12, 14 may have a thickness between 10 nm and 300 nm. The deposition of the conductive portions 12, 14 on the substrate 10 can be achieved by a physical vapor deposition or by printing techniques, in particular by screen printing or by inkjet printing, or by spraying.
    FIG. 5B shows the structure obtained after forming a semiconductor portion 16 on the conductive portions 12, 14. The semiconductor portion 16 has a thickness of between 20 nm and 200 nm, preferably between 20 nm and 100 nm. The semiconductor portion 16 may be of a semiconductor organic material. It can be composed of small organic N-type molecules, especially perylenes and their derivatives, small P-type organic molecules, especially pentacenes and their derivatives, P-type polymers, especially polythiophenes and their derivatives, or polymers. N-type, especially vinylenes, polymers containing azoles, polythiophenes and their derivatives.
    FIG. 5C represents the structure obtained after having deposited a portion of a liquid portion 18, possibly viscous, on the portion 16, and possibly on a portion of the conductive portions 12, 14. The liquid layer portion 18 comprises a solvent and a compound comprising predominantly a copolymer of PVDF dissolved in the solvent. The thickness of the portion 18 is between 100 nm and 8 pm, preferably between 100 nm and 5 pm. The portion 18 comprises a face 20 on the opposite side to the semiconductor portion 16.
    The PVDF copolymer comprises P (VDF-TrFE-CFE), P (VDF-TrFE-CTFE) or a mixture of these compounds. The chlorine content in molecules of the copolymer is greater than or equal to 3%, preferably greater than or equal to 4%.
    The compound may further comprise fillers. The fillers may correspond to ceramic particles, for example particles of barium titanate (BaPiOg), particles of lead titanate zirconate (PbZrTiC> 3 or PZT), particles of lead titanate (PbTiOg) or tantalate particles of lithium (LiTaC> 3). The concentration by weight of fillers in the compound relative to the weight of the PVDF copolymer can vary from 5% to 25%.
    The compound may therefore comprise a mixture of at least one copolymer of PVDF and at least one ceramic, for example the following mixtures: P (VDF-TrFE-CTFE) / BaTiOg, P (VDF-TrFE-CFE) / BaTiO 3 , (VDF-TrFE-CTFE) / PbZrTiO 3, P (VDF-TrFE-CFE) / PbZrTiO 3, P (VDF-TrFE-CTFE) / PbTiO 3, P (VDF-TrFE-CFE) / PbTiO 3, P (VDF-TrFE -CTFE) / LiTaO3 and P (VDF-TrFE-CFE) / LiTaOg.
    Preferably, the solvent is a polar solvent. This advantageously makes it possible to improve the dissolution of the PVDF copolymer. Preferably, the solvent is adapted to absorb, at least partially, the UV radiation, for example over a range of wavelengths between 200 nm and 400 nm. According to one embodiment, the evaporation temperature of the solvent is between 110 ° C and 140 ° C, preferably between 110 ° C and 130 ° C, more preferably between 120 ° C and 130 ° C. The solvent may be selected from the group consisting of cyclopentanone, dymethylsulphoxide (DMSO), dymethylformamide (DMF), gamma-butyrolactone (GBL), methyl ethyl ketone (MEK), acetone, dimethylacetamide (DMAc). ) and N-methyl-E-pyrrolidone (NMP). Preferably, the solvent is cyclopentanone.
    Portion 18 comprises from 1% to 30%, preferably from 1% to 20%, by weight of the compound comprising mainly the PVDF copolymer and from 70% to 99%, preferably from 80% to 99%, by weight of the solvent. Advantageously, the concentration by weight of the solvent is chosen to adjust the viscosity of the solution obtained to enable the implementation of printing techniques. The method of forming the liquid layer portion 18 may correspond to a so-called additive process, for example by direct printing of the portion 18 at the desired locations, for example by inkjet printing, heliography, screen printing, flexography, coating by spraying (English spray coating) or drops deposit (English drop-casting). The method of forming the liquid layer portion 18 may correspond to a so-called subtractive process, in which the liquid layer is deposited on the entire structure and in which the unused portions are subsequently removed, for example by photolithography or laser ablation. . Depending on the material considered, the deposition on the entire structure may be carried out for example by liquid, sputtering or evaporation. This may include processes such as spin coating, spray coating, heliography, slot-die coating, blade-coating, flexography or screen printing.
    FIG. 5D illustrates a step of irradiating at least a portion of the portion 18 on the side of the face 20, resulting in the surface formation of the portion 18 of a layer 22 comprising the PVDF copolymer substantially comprising crystals having the same crystallographic orientation, the remainder of the portion 18 covered by the layer 22 being substantially unmodified. The irradiation with UV rays is represented diagrammatically in FIG. 5D by the arrows 23. The irradiation is carried out by a succession of UV radiation pulses, or ultraviolet flashes, which have the characteristics described previously. The final thickness of the layer 22 depends in particular on the number of UV pulses and the composition of the portion 18. According to one embodiment, the entire portion 18 may be modified during the irradiation step. By way of example, for a thickness of the layer 22 of 100 nm, the number of UV pulses can vary from 1 to 2 with a fluence between 10 J / cm 2 and 15 J / cm 2 and for a thickness of layer 22 of the order of 4 pm, the number of UV pulses can be of the order of 2 to 6 with a fluence between 17 J / cm ^ and 21 J / cm ^.
    Advantageously, the solvent of the liquid layer portion 18 absorbs at least part of the UV radiation. This makes it possible to improve the heating of the UV-based compound and to promote the formation of the β crystalline phase. The evaporation temperature of the solvent is advantageously greater than 110 ° C. in order to avoid too rapid evaporation of the solvent before the formation of the β-crystalline phase which occurs between 120 ° C. and 130 ° C. The step of exposing the portion 18 to UV pulses may be followed by a thermal annealing step, for example a thermal annealing step on a heating plate, for example at a temperature of between 80 ° C. and 120 ° C. for a period of between 5 minutes and 30 minutes. This hot-plate thermal annealing step does not modify the structure of the layer 22. Preferably, the irradiation and global thermal annealing step cause evaporation of more than 50% by weight, preferably more than 80%. by weight, of the solvent of the layer portion 18.
    FIG. 5E shows the structure obtained after having deposited a second conductive portion 26 on the layer 22. The conductive portion 26 may have the same composition as the conductive portions 12, 14. The conductive portion 26 may have a thickness of between 10 nm and 300 nm. The deposition of the conductive portion 26 can be achieved by a physical vapor deposition or by printing techniques, in particular by screen printing or by inkjet printing, or by spraying. An annealing step can then be provided, for example by irradiation of the conductive portion 26 by UV pulses having a fluence of between 15 J / cm ^ and 25 J / cm ^.
    A MOS transistor 30 is then obtained. The conductive portion 26 forms the gate of the transistor 30. The stack of the insulating layers 22 and 24 forms the gate insulator 32 of the transistor 30. The conductive portions 12 and 14 form the drain and source contacts of the transistor 30. The transistor channel 30 is formed in the semiconductor layer 16.
    The X-ray diffraction pattern of the layer 22 is similar to the curve C2 shown in FIG. 2. The X-ray diffraction pattern of the layer 24 is analogous to the curve Cg shown in FIG. 1. The dielectric constant of the The gate insulator of the MOS transistor 30 is thus increased in contact with the gate 26. This advantageously makes it possible to increase the drain current of the MOS transistor 30 in the on state. The inventors have furthermore demonstrated that the leakage currents of the MOS transistor are reduced.
    FIGS. 6A to 6D illustrate an embodiment of a method for manufacturing an electronic component having the structure of a metal-oxide-metal capacitor, also called a MIM capacitor, and which can be used in particular as a sensor or as a actuator.
    FIG. 6A represents the structure obtained after the formation of a conductive portion 40 on the substrate 10. The formation of the conductive portion 40 can be carried out as previously described for the formation of the conductive portions 12, 14 in connection with the Figure 5A.
    FIG. 6B shows the structure obtained after the formation, on the conductive portion 40, of a liquid portion 42, possibly viscous. The liquid layer portion 42 comprises a solvent and a compound comprising predominantly a copolymer of PVDF dissolved in the solvent. The composition of the portion 42 and the method of depositing the portion 42 may correspond to what has been previously described for the portion 18 in connection with Figure 5C. The face of the portion 42 opposite to the conductive portion 40 is designated by the reference 43.
    FIG. 6C shows the structure obtained after irradiation of the portion 42 on the side of the face 43. The irradiation process of the portion 42 can correspond to what has been described previously for the irradiation of the portion 18 in relation to the Figure 5D. It causes the formation of a layer 44 similar to the layer 22 shown in FIG. 5D, the crystalline structure of which is modified by the irradiation, on the surface of the portion 42. Global annealing of the layer 42 can then be provided for forming a layer 45 similar to the layer 24 shown in Figure 5D.
    FIG. 6D shows the structure obtained after the formation of a conductive portion 46 on the substrate 10. The formation of the conductive portion 46 can be carried out as previously described for the formation of the conductive portion 26 in connection with FIG. 5E.
    An electronic component 50 having the structure of a capacitor MIM is then obtained. The conductive portions 40 and 46 form the electrodes of the electronic component. The X-ray diffraction pattern of the layer 44 is analogous to the curve Cg shown in FIG. 2. For some electronic components, in particular for a capacitor, it may be desirable for the entire portion 42 to be modified during the step of FIG. irradiation. In this case, the global thermal annealing step of the portion 42 is not present and the total duration of the manufacturing process of the electronic component can be reduced. For the realization of a piezoelectric sensor comprising the layers 44 and 45, it may be desirable for the layer 44 to be located on the side of the electrode 46 used for making measurements.
    Particular embodiments have been described. Various variations and modifications will be apparent to those skilled in the art.
    权利要求:
    Claims (10)
    [1" id="c-fr-0001]
    A method of manufacturing an electronic device (30; 50) comprising a film (32; 42) comprising the steps of: forming at least one layer (18; 42) of a solution comprising a solvent and a compound comprising a polymer selected from the group consisting of poly (vinylidene fluoride - trifluoroethylene - chlorofluoroethylene) (P (VDF-TrFE-CFE)), poly (vinylidene fluoride - trifluoroethylene - chlorotrifluoroethylene) (P (VDF-TrFE-CTFE )) and a mixture of these compounds, the level of chlorine molecules of the copolymer being greater than or equal to 3%, and irradiating at least the layer with pulses of at least one ultraviolet radiation.
    [2" id="c-fr-0002]
    The method of claim 1, wherein the ultraviolet radiation is emitted from a source, wherein said layer (18; 42) comprises a face (20; 44) exposed to ultraviolet radiation and wherein the distance between said face and the source is between 2 cm and 10 cm.
    [3" id="c-fr-0003]
    The method of claim 1 or 2, wherein the duration of each pulse is between 500 ps and 2 ms.
    [4" id="c-fr-0004]
    4. A process according to any one of claims 1 to 3, wherein the energy fluence of ultraviolet radiation is between 10 J / cm 2 and 25 J / cm 2.
    [5" id="c-fr-0005]
    The method of any one of claims 1 to 4 wherein only a portion of the layer (18) is heated during the irradiation step.
    [6" id="c-fr-0006]
    The method of claim 5, wherein the irradiating step is followed by a thermal annealing step of the remainder of the layer (18) at a temperature between 80 ° C and 120 ° C.
    [7" id="c-fr-0007]
    7. Process according to any one of claims 1 to 6, wherein the solvent has an evaporation temperature of between 110 ° C and 140 ° C.
    [8" id="c-fr-0008]
    The process of any one of claims 1 to 7, wherein the solution comprises from 80% to 95% by weight of the solvent and from 5% to 20% by weight of the compound.
    [9" id="c-fr-0009]
    9. A piezoelectric and / or pyroelectric device comprising a layer (32; 42) comprising in majority a partly crystallized polymer selected from the group comprising poly (vinylidene fluoride - trifluoroethylene chlorofluoroethylene) (P (VDF-TrFE-CFE)), poly (vinylidene fluoride - trifluoroethylene - chlorotrifluoroethylene) (P (VDF-TrFE-CTFE)) and a mixture of these compounds, the chlorine content in molecules of the copolymer being greater than or equal to 3%, in which at least part of the thickness of the layer, the crystalline phase or the crystalline phases of the polymer have the same crystallographic orientation.
    [10" id="c-fr-0010]
    10. Device according to claim 9, wherein the layer (32) comprises a first sublayer (22) of said crystallized polymer in which the crystalline phase or the crystalline phases of the polymer have the same crystallographic orientation and a second underlayer ( 24) of said polymer covered by the first sub-layer and in contact with the first sub-layer in which the crystalline phase or the crystalline phases of the polymer have different crystallographic orientations.
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    WO2015071567A1|2013-11-15|2015-05-21|Commissariat A L'energie Atomique Et Aux Energies Alternatives|Process for manufacturing a pyroelectric and/or piezoelectric device|
    FR3019381A1|2014-03-31|2015-10-02|Commissariat Energie Atomique|ELECTROACTIVE ACTUATOR AND METHOD OF MAKING|
    FR3066495B1|2017-05-22|2020-12-11|Arkema France|FORMULATION OF ELECTROACTIVE INK FOR INKJET PRINTING|
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    CN111393686B|2020-03-13|2021-06-08|中山大学|Modified block copolymer with ultraviolet light induced crystal form transformation and preparation method and application thereof|
    法律状态:
    2016-11-30| PLFP| Fee payment|Year of fee payment: 2 |
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    FR1561045A|FR3043836B1|2015-11-17|2015-11-17|ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME|
    FR1561045|2015-11-17|FR1561045A| FR3043836B1|2015-11-17|2015-11-17|ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME|
    EP16197981.0A| EP3171419A1|2015-11-17|2016-11-09|Electronic device and method for manufacturing same|
    US15/351,555| US20170141291A1|2015-11-17|2016-11-15|Electronic device and method of manufacturing the same|
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