• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a magnetic memory point, comprising: a pad (31) having a magnetic layer portion (34) between a conductive layer portion (32) and a non-magnetic layer portion (36), the magnetic layer having a magnetization perpendicular to the plane of the layers; and an elbow conductor track (42) comprising a central portion extended by two arms (44A, 44B), the stud being disposed entirely on the track, in which, for each arm, a current flowing towards the stud along the median axis of the arm sees the part of the stud closest to the arm in majority on his left for one of the arms (44A), and in majority on his right for the other of the arms (44B).
    公开号:FR3042634A1
    申请号:FR1559914
    申请日:2015-10-16
    公开日:2017-04-21
    发明作者:Gilles Gaudin；Ioan Mihai Miron；Olivier Boulle；Safeer Chenattukuzhiyil
    申请人:Centre National de la Recherche Scientifique CNRS；Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    MAGNETIC MEMORY POINT
    Field
    The present application relates to a magnetic memory point, and more particularly to a current-induced reversal type magnetic memory point.
    Presentation of the prior art
    French Patent No. 2,963,152 describes a magnetic memory point as shown schematically in FIGS. 1A, 1B and 1C. FIGS. 1A and 1B respectively show a sectional view and a perspective view of a magnetic memory point as described with reference to FIGS. 1c-1f, 2a-2b and 3a-3d of French Patent No. 2,963,152. Figure IC is a simplified top view of this memory point.
    As illustrated in FIGS. 1A and 1B, this memory point comprises, above a conductive track 1, a stud 3. The stud 3 comprises a stack of regions each of which is formed of a portion of a thin layer or a stack of several thin layers. The conductive track 1 is for example formed on a substrate 5 consisting of a silicon wafer coated with a silicon oxide layer and is connected between terminals A and B. The stack constituting the pad 3 comprises successively from of the track 1, a region 10 of a non-magnetic conductive material, a region 11 of a magnetic material, a region 12 of a non-magnetic material, a region 13 of a magnetic material and an electrode 14. The material of the layer 12 can be driver it is preferably an insulating material sufficiently thin to be traversed by electrons tunneling effect. There is a structural difference between the non-magnetic regions 10 and 12 so as to have an asymmetric system in a direction orthogonal to the plane of the layers. This difference may result in particular from a difference in material, thickness, or growth mode of these layers.
    Lists of materials that can constitute the various layers are given in the aforementioned patent. The magnetic materials of regions 11 and 13 are formed under conditions such that they have a magnetization directed orthogonally to the plane of the layers. The magnetic material of the layer 13 is formed under conditions such that it retains an intangible magnetization (trapped layer). The upper electrode layer 14 is connected to a terminal C.
    The programming of the memory point is performed by circulating a current between the terminals A and B, while a horizontally oriented field H (parallel to the plane of the layers and the direction of the current between the terminals A and B) is applied. According to the relative directions of the current between the terminals A and B and the field vector H, the layer 11 is programmed so that its magnetization is oriented upwards or downwards.
    For the reading of this memory point, a voltage is applied between the terminal C and one or other of the terminals A and B. The resulting current between the terminal C and one or other of the terminals A and B takes different values according to the relative direction of the magnetizations of the layers 11 and 13: high value if the two magnetizations are in the same direction and low value if the two magnetizations are in opposite directions.
    A feature of the memory point described above is that its programming is done through a current flowing between terminals A and B and a magnetic field applied in the plane of the layers, parallel to the current. No current flows from terminal A or B to terminal C during programming. This has the advantage of completely dissociating the read and write operations of the memory point.
    Many alternative embodiments are possible. In particular, each layer described above may consist of a stack of layers in a manner known in the art to acquire the desired characteristics.
    The layer portion 10 of a non-magnetic conductive material may be omitted, provided that the track 1 is made of a non-magnetic material suitable for the growth of the magnetic layer 11. The track 1 may then have an extra thickness under the stud 3. For the reversal of the magnetization in the layer 11 can be done, it is also necessary that spin-orbit pairs are present in the magnetic layer. To do this, it is necessary for example that the layer in contact with this layer 11 (or separated from it by a thin separating layer) is made of a material or composed of materials with strong spin-orbit coupling. Another solution is, for example, that the contact between the magnetic layer 11 and one or the other of the layers 10 and 12 creates this spin-orbit coupling; this can be achieved for example by hybridization of the magnetic layer 11 with the layer 12 if it consists of an insulator (see "Spin-orbit coupling effect by minority interface resonance states in single-crystal magnetic tunnel junctions ", Y. Lu et al., Physical Review B, Vol 86, p.184420 (2012)).
    It will be noted that the memory point of FIGS. 1A and 1B can be broken down into two elements: a storage element comprising the track 1 provided with the terminals A and B and the layer portions 10, 11 and 12, and a reading element comprising in the example given above layers 13 and 14 and the electrode C. With the same storage element, various reading modes could be envisaged, for example an optical reading.
    Figure IC is a simplified top view of the pad 3. Only the track 1 and the pad 3 are shown, as well as the terminals A and B connected to contacts 15 and 16.
    As indicated above, the memory point of FIGS. 1A-1C is programmable by the application of a current between terminals A and B simultaneously with the application of a magnetic field having a non-zero component in the direction of the current. Examples of means for generating a magnetic field are given in the aforementioned patent application. The application of an external field or the realization of specific magnetic layers suitable for creating the field H poses problems of practical realization.
    The patent application US 2014/0010004 describes a magnetic memory point that can be programmed by applying a current in the absence of a magnetic field. Figure 2 is a schematic bottom view of a magnetic memory point corresponding to Figure 18A of this patent application. A magnetic pad 20 comprises a stack of portions of layers similar to the layers of the magnetic pad 3 described in relation to FIGS. 1A-1C. The stud 20 has an elongated rectangle shape. Two separate electrodes 24A and 24B arranged at the ends of the rectangle and protruding from the same large side of the rectangle are connected to terminals A and B and make it possible to circulate a current in the magnetic layer 11. The direction of the current flow , from terminal A to terminal B or from terminal B to terminal A, sets the programmed value. Such a configuration of the memory point having separate electrodes under the pad poses various problems of implementation.
    There is a need for a programmable memory point by applying a current in the absence of a magnetic field that is simple to perform and sensitive to low currents. summary
    Thus, an embodiment provides a magnetic memory point, comprising a pad having a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion, the magnetic layer having a magnetization perpendicular to the plane of the layers; and an angled conductive track having a central portion extended by two arms, the stud being disposed entirely on the track, in which, for each arm, a current flowing towards the stud along the median axis of the arm sees the portion of the stud closer to the arm mostly on his left for one of the arms, and mostly on his right for the other arm.
    According to one embodiment, the conductive layer and the non-magnetic layer differ in their thickness, composition or structure.
    According to one embodiment, the magnetic layer has a thickness of less than 3 nm.
    According to one embodiment, the pad viewed from above has the shape of a disk.
    According to one embodiment, for each arm, the portion of the stud closest to the arm comprises an elongated portion in a direction making, in top view, an acute angle with the median axis of the arm.
    According to one embodiment, the acute angle is between 30 ° and 60 °.
    According to one embodiment, at least one of said elongated portions forms a point.
    According to one embodiment, at least one of said elongate portions has a rounded tip.
    According to one embodiment, the rounded tip has a radius of curvature of between 1 and 10 nm.
    According to one embodiment, the stud has an elongate fome along an axis and the track is substantially bent at right angles.
    According to one embodiment, the stud has a central portion elongated rectangle in the direction of one of the arms and disposed near the edge of the arm closest to the other arm.
    Another embodiment provides a method of programming a memory point, comprising a step of passing a current from one arm to another, the direction of current being selected to achieve the desired programming.
    Brief description of the drawings
    These and other features and advantages will be set forth in detail in the following description of particular embodiments in a non-limiting manner with reference to the accompanying figures in which: FIGS. 1A, 1B and 1C are respectively a view of cut and in perspective and from above a magnetic memory point; Figure 2 is a schematic bottom view of a magnetic memory point; Figures 3A and 3B are respectively a schematic perspective view and a schematic top view of an embodiment of a magnetic memory point; Figs. 4A-4C are schematic top views of other embodiments of a magnetic memory point; and Figs. 5A-5C are schematic top views of other embodiments of a magnetic memory point. detailed description
    The same elements have been designated with the same references in the various figures and, moreover, the various figures are not drawn to scale. For the sake of clarity, only the elements that are useful for understanding the described embodiments have been shown and are detailed.
    In the description which follows, unless otherwise stated, when reference is made to absolute position qualifiers, such as the terms "high", "low", etc., or relative, such as "above", " below "," upper ", etc., reference is made to the orientation of the element concerned in FIGS. 1A, 1B and 3A. Unless otherwise specified, the expressions "substantially" and "of the order of" mean, in the case of an orientation, within 10 degrees, preferably within 5 degrees.
    FIGS. 3A and 3B are respectively a schematic perspective view and a schematic top view of an embodiment of a magnetic memory point 30.
    The magnetic memory point 30 comprises a pad 31. The stud 31 comprises, from bottom to top, a conductive layer portion 32, a programmable magnetic layer portion 34 having a magnetization orthogonal to the plane of the layers, a non-magnetic layer portion 36 different from the layer 32, a magnetic layer portion 38 and an electrode 40. The conductive layer 32 and the non-magnetic layer 36 differ in their thickness, composition or structure. The electrode 40 is connected to a terminal C. The layers 32, 34, 36, 38 and 40 are similar to the thin layers forming the respective regions 10, 11, 12, 13 and 14 previously described in relation to FIGS. .
    The stud 31 is formed in its entirety on a conductive track 42 provided at its ends with contacts with terminals A and B. The track 42 is bent and comprises two arms 44A and 44B of respective median axes 45A and 45B. The angle between the median axes 45A and 45B may be between 30 ° and 150 °, preferably between 60 ° and 120 °, for example of the order of a right angle. The two arms 44A and 44B meet at a central portion 46 of the track 42. The stud 31 has a top view in the shape of a disc and is disposed on the central portion 46 in a position off center relative to at the median axes 45A and 45B. An observer placed on the median axis 45A of the arm 44A and looking toward the stud along the median axis 45A sees the stud essentially on its left. If the observer is placed on the median axis 45B and looks towards the stud along the median axis 45B, he sees the stud essentially on his right.
    In operation, the memory point 30 is connected to a device not shown adapted to circulate a current between the terminals A and B. The inventors have observed that the passage of the current from the terminal A to the terminal B imposes an orientation to the magnetization of the programmable layer 34. The passage of the current from the terminal B to the terminal A imposes the opposite orientation. Thus, the programming of the memory point is obtained in the absence of a device for creating a magnetic field.
    It will be noted that the track 42 is continuous under the stud 31 and extends around the stud. When the programming current flows between the terminals A and B, the path of the current takes a particular configuration in the track under the stud and around the stud, as well as in the layers 32 and 34 of the stud. Indeed, the current from the arm 44A sees the stud on its left. The stud 31 is seen on the right by a current from the arm 44B. This configuration of the current in the pad, under the pad and around the pad allows programming.
    It will be noted that the stud 31 is located entirely on the track 42, which makes it possible to easily form the stud from the surface of the track 42. As a result, the conductive layer 32 can be omitted, provided that the material and the manufacturing method of the track 42 is suitable for the growth of the programmable magnetic layer 34.
    The reading of the memory point 30 is obtained, in a manner similar to the reading described in relation to FIGS. 1A and 1B, by measuring a resistance between the terminal C and the terminal A or B. The upper layers 38 and 40, as well as the terminal C, constitute a reading set. As a variant, the reading assembly can be omitted, and replaced for example by an electronic reading device using the extraordinary Hall effect or else an optical reading device.
    Figs. 4A-5C are schematic top views of other embodiments of a magnetic memory point. For the sake of clarity, elements of the memory points described in relation to FIGS. 4A to 5C having the same role as elements of the memory point 30 of FIGS. 3A and 3B are designated by the same references. Each of the magnetic memory points illustrated in FIGS. 4A to 5C comprises a pad integrally arranged on a track. Each pad comprises a portion of a stack of layers similar to the stack of layers of pad 31 described in connection with FIGS. 3A and 3B. Each stud is surmounted by a contact with a terminal C.
    In Figure 4A a magnetic point 50 comprises a stud 51 formed on a conductive track 52. The conductive track comprises a central bend between two arms 44A and 44B, and the stud 51 is disposed on the bend. The angle between the arms can be between 30 ° and 150 °, preferably between 60 ° and 120 °, for example of the order of a right angle. The arms 44A and 44B have respective median axes 45A and 45B and are provided at their ends with contacts with respective terminals A and B. In plan view, the pad 51 has the shape of an elongated rectangle 53 which extends to from each of its short sides by two points 55, 56. The axis 54 of the rectangle makes angles between 30 and 60 °, for example substantially equal to 45 °, with the median axes 45A and 45B, the two arms 44A and 44B lying on the same side of the axis 54. The median axis 45A and the axis 54 make an acute angle 58A oriented in the clockwise direction, while the central axis 45B and the axis 54 make a acute angle 58B counterclockwise.
    A current flowing along the median axis 45A towards the pad 51 sees the part closest to the stud on its left. A current flowing along the median axis 45B towards the pad 51 sees the portion closest to the stud on its right. Thus, the circulation of a current between the terminals A and B imposes an orientation on the magnetization of the programmable layer 34 in the parts of the pad 51 closest to the arms 44A and 44B. The inventors have observed and demonstrated that, remarkably, this locally imposed orientation then extends to the magnetization of the layer 34 of the whole of the stud. Thus, the magnetic memory point 50 is programmable by a current flowing between the terminals A and B without the need to add a magnetic field.
    In addition, the portions of the stud 51 closest to the arms 44A and 44B have tip shapes. The inventors have observed and demonstrated that the presence of such points advantageously makes it possible to program the memory point with a reduced current.
    Figure 4B shows a variant 60 of the memory point 50 described above. The memory point 60 comprises a pad 61 on a track 62. The track 62 has arms 44A and 44B arranged in the same manner as the arms 44A and 44B of the track 52 of the memory point 50. The arms are connected to a central portion 46. The stud 61 has a shape and a disposition similar to those of the stud 51, and extends in two points 64 and 65 along an axis 66. The axis 66 forms angles 68A and 68B with the median axes 45A and 45B. identical to the angles 58A and 58B of the memory point 50.
    FIG. 4C represents another variant of the memory point 50 described above. The memory point 70 comprises a stud 71 on a track 72. The track 72 has arms 44A and 44B disposed in the same manner as the arms 44A and 44B of the track 52 of the memory point 50. The two arms connected to a central portion form a rounded bend in the shape of a turn. The stud 71 has a shape and a disposition similar to those of the stud 51, and extends in two points 74 and 75 along an axis 76. The axis 76 forms with the median axes 45A and 45B angles 78A and 78B identical to the angles 58A and 58B of memory point 50.
    The bends of the tracks 62 and 72 shown in FIGS. 4B and 4C allow the pads 61 and 71 to be more elongated than the pad 51 of FIG. 4A and to have sharper tips. In addition, the shape of each of these elbows prevents a portion of the current passes in parts of the elbow remote from the pad. As a result, the memory points 61 and 71 of FIGS. 4B and 4C can be programmed with a lower current while retaining the simple shape of the pad 51 of FIG. 4A.
    In FIG. 5A, a magnetic memory point 80 comprises a stud 81 disposed on a track 82. The conductive track comprises a central bend between two arms 44A and 44B, and the stud 81 is placed on the bend. The angle between the arms can be between 15 ° and 75 °, preferably between 30 ° and 60 °, for example of the order of 45 °. The stud 81 comprises a central portion 83 disposed on the central portion of the track on the arm 44B near the edge on the same side as the arm 44A. The central portion 83 has the shape of an elongated rectangle in the direction of the arm 44B. The central portion 83 extends from each of its short sides by portions 84 and 85 shaped tip. The portion 84 extends on the arm 44B side along an axis 86 making an acute angle between 30 ° and 60 °, for example substantially equal to 45 ° with the central axis 45B. The portion 85 extends opposite the arm 44A along the central axis 87 of the central portion 83 and its tip is close to the edge of the arm 44A opposite the arm 44B. The middle axis 45A and the axis 87 make an acute angle 88A oriented in the clockwise direction, while the median axis 45B and the axis 86 make an acute angle 88B counterclockwise.
    In FIG. 5B, a magnetic memory point 90 comprises a stud 91 disposed on a track 92. The conductive track comprises a central bend between two arms 44A and 44B, and the stud 91 is placed on the bend. The angle between the arms can be between 30 ° and 150 °, preferably between 60 ° and 120 °, for example of the order of a right angle. The stud 91 comprises a central portion 93 disposed on the central portion of the track on the arm 44B near the edge on the same side as the arm 44A. The central portion 93 has an elongated rectangle shape whose long sides are parallel to the median axis 45B. The central portion 93 extends from its short sides by tip-shaped portions 94 and 95. The portion 94 extends on the arm 44B side in a direction 96 making an angle between the center line 45B ° and 60 °, for example substantially equal to 45 °. The portion 95 extends opposite the arm 44A in a direction 97 forming with the central axis 45A an angle of between 30 ° and 60 °, for example substantially equal to 45 °. The median axis 45A and the axis 97 make an acute angle 98A oriented in the clockwise direction, while the median axis 45B and the axis 96 make an acute angle 98B oriented counterclockwise.
    The memory points 80 and 90 shown in FIGS. 5A and 5B therefore have tip-shaped portions close to the arms. The orientation of these portions is such that, when an observer located on the median axis of the arm 44A looks at the stud in the direction of the median axis, he sees the tip on his left. The tip is on the right of an observer located on the median axis of the arm 44B and looking at the stud. Thus, the memory points 80 and 90 can be programmed in the same manner as the memory points described above in connection with FIGS. 3A, 3B and 4A to 4C. However, the points of the pads of the memory points 80 and 90 are sharper than the peaks of the memory dot pads of FIGS. 4A to 4C, which allows an advantageous additional reduction of the programming current.
    Although the particular examples of pads described in connection with FIGS. 4A-5B comprise tip-shaped portions having sharp angles, the actual shapes may be rounded. The radii of curvature may be, for example, between 1 and 10 nm. Alternatively, the tip-shaped portions may be replaced by rounded portions elongate in the same direction.
    FIG. 5C represents such a variant of the memory point 80 of FIG. 5A. A memory point 100 comprises a pad 101 disposed on the track 82 of the memory point 80. The stud 101 comprises a central portion 103 similar to the portion 83 of the stud 80 and arranged identically on the branch 44B. The portion 103 is extended by elongated rounded portions along the directions 86 and 87 of Figure 5A.
    An advantage of the memory point 100 is that the rounded shapes of the stud 101 make it easier to make, especially when the dimensions are small. By way of example, the dimensions in a direction orthogonal to the median axes 45A and 45B, or widths, of the arms 44A and 44B of FIGS. 3A to 5C are between 10 nm and 200 nm. The widths of the arms 44A and 44B may be different. By way of example, the current density used for S 2 programming the magnetic point is between 10 A / cm and 108 A / cm 2.
    The programmable magnetic layer may comprise an alloy having a clean perpendicular magnetic anisotropy, in particular FePt, FePd, CoPt, or a rare earth / transition metal alloy, in particular GdCo, TdFeCo. The programmable magnetic layer may comprise a metal or an alloy having in the stack a perpendicular magnetic anisotropy induced by the interfaces, in particular Co, Fe, CoFe, Ni, CoNi. One of the layers 32, 36 sandwiching the programmable magnetic layer 34 may be of a non-magnetic metal, such as Pt, W, Ir, Ru, Pd, Cu, Au, Bi, Hf or an alloy of these metals or under the fome of a stack of several layers of each of these metals.
    The conductive layer 32 may be of a non-magnetic or antiferromagnetic material. By way of example of antiferromagnetic materials, mention may be made of Mn-based alloys such as IrMn, FeMn, PtMn, or alloys of these compounds such as PtFeMn or oxides such as CoOx or NiOx.
    The non-magnetic layer 36 surmounting the programmable magnetic layer may be a dielectric oxide such as SiOx, AIOx, MgOx, TaOx, HfOx, or a dielectric nitride such as SiN, BNx, of a thickness to allow a tunnel effect. The thickness of one of the layers 32, 36 sandwiching the programmable magnetic layer may be between 0.5 nm and 200 nm, more particularly between 0.5 nm and 100 nm, and preferably less than 3 nm. The thickness of the programmable magnetic layer may be less than 3 nm.
    The magnetic layer 38 of the reading assembly may be of a magnetic material, or a magnetic material compound, or comprise several layers of magnetic and non-magnetic materials.
    Particular embodiments have been described. Various variations and modifications will be apparent to those skilled in the art. In particular, although particular configurations have been described, other configurations are possible in the condition that, for each arm, an outside observer placed on the arm looking at the stud in the direction of the median axis of the arm sees the part the nearest stud most of him on his left for one arm, and mostly on his right for the other arm.
    In addition, each layer of the magnetic point pads described above may consist of a stack of layers in a manner known in the art to acquire the desired characteristics.
    Furthermore, although in the magnetic memory points described, the arms are rectilinear, the arms can also be curved having in their parts closest to the stud the same direction as the straight arms, and having median axes defined by the median axes of the straight arms.
    权利要求:
    Claims (12)
    [1" id="c-fr-0001]
    A magnetic memory point, comprising: a pad (31; 51; 61; 71; 81; 91; 101) having a magnetic layer portion (34) between a conductive layer portion (32) and a non-magnetic layer portion; (36), the magnetic layer having a magnetization perpendicular to the plane of the layers; and an angled conductive track (42; 52; 62; 72; 82; 92; 102) having a central portion extended by two arms (44A, 44B), the block being disposed entirely on the track, wherein for each arm , a current flowing towards the stud along the median axis (45A, 45B) of the arm sees the portion of the stud closest to the arm, to a large extent on its left for one of the arms (44A), and in majority on its right for the other arm (44B).
    [2" id="c-fr-0002]
    A magnetic memory point according to claim 1, wherein the conductive layer (34) and the non-magnetic layer (36) differ in thickness, composition or structure.
    [3" id="c-fr-0003]
    Magnetic memory point according to claim 1 or 2, wherein the magnetic layer (34) has a thickness of less than 3 nm.
    [4" id="c-fr-0004]
    4. Magnetic memory point (30) according to any one of claims 1 to 3, wherein the stud (31) seen from above has the shape of a disk.
    [5" id="c-fr-0005]
    5. Magnetic memory point (50; 60; 70; 80; 90; 100) according to any one of claims 1 to 3, wherein for each arm (44A, 44B), the part of the stud closest to the arm comprises an elongated portion in a direction making, in plan view, an acute angle with the median axis (45A, 45B) of the arm.
    [6" id="c-fr-0006]
    The magnetic memory point of claim 5, wherein the acute angle is between 30 ° and 60 °.
    [7" id="c-fr-0007]
    The magnetic memory point (50; 60; 70; 80; 90) according to claim 5 or 6, wherein at least one of said elongate portions forms a tip.
    [8" id="c-fr-0008]
    A magnetic memory point (50; 60; 70; 80; 90) according to claim 5 or 6, wherein at least one of said elongated portions forms a rounded tip.
    [9" id="c-fr-0009]
    A magnetic memory point (50; 60; 70; 80; 90) according to claim 8, wherein the rounded tip has a radius of curvature of between 1 and 10 nm.
    [10" id="c-fr-0010]
    A magnetic memory point (50; 60; 70) according to any one of claims 5 to 9, wherein the stud (51; 61; 71) has an elongate shape along an axis (54; 66; 76) and the track (52; 62; 72) is substantially bent at right angles.
    [11" id="c-fr-0011]
    A magnetic memory point (80; 90; 100) according to any of claims 5 to 10, wherein the stud has a central portion (83; 93; 103) in the shape of an elongated rectangle in the direction of one arms (44B) and disposed near the edge of this arm closest to the other arm.
    [12" id="c-fr-0012]
    A method of programming a memory point according to any one of claims 1 to 11, comprising a step of passing a current from one arm to another, the direction of the current being selected to obtain the desired programming .
    类似技术:
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    同族专利:
    公开号 | 公开日
    CN108352445B|2021-09-28|
    CN108352445A|2018-07-31|
    EP3363056A1|2018-08-22|
    WO2017064394A1|2017-04-20|
    KR20180070581A|2018-06-26|
    FR3042634B1|2017-12-15|
    JP2018537846A|2018-12-20|
    JP6949834B2|2021-10-13|
    US10381059B2|2019-08-13|
    US20180308534A1|2018-10-25|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1559914A|FR3042634B1|2015-10-16|2015-10-16|MAGNETIC MEMORY POINT|FR1559914A| FR3042634B1|2015-10-16|2015-10-16|MAGNETIC MEMORY POINT|
    CN201680059574.3A| CN108352445B|2015-10-16|2016-10-05|Magnetic memory element|
    JP2018519285A| JP6949834B2|2015-10-16|2016-10-05|Magnetic memory element|
    KR1020187010538A| KR20180070581A|2015-10-16|2016-10-05|Magnetic memory element|
    EP16791653.5A| EP3363056A1|2015-10-16|2016-10-05|Magnetic memory element|
    PCT/FR2016/052568| WO2017064394A1|2015-10-16|2016-10-05|Magnetic memory element|
    US15/768,522| US10381059B2|2015-10-16|2016-10-15|Magnetic memory element|
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