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    • 专利摘要:
    In an active pixel sensor comprising a photodiode PHD, a memory node MN and a read node SN, the memory node being designed to contain the charges generated by the photodiode at the end of an integration period allowing integration into the mode. global shutter and a correlated double-sampling readout, it is expected that the memory storage capacity of the memory node is at least N times greater than the charge storage capacity of the photodiode (N integer greater than or equal to 2) and provision is made to make at each integration and read cycle, during the integration time Tint (i), N transfers Tri1, Tri2, Tri3 charges from the photodiode to the memory node and the N transfers are equitably distributed over the duration of integration. The dynamics of the sensor is improved in a strong light environment.
    公开号:FR3039928A1
    申请号:FR1557460
    申请日:2015-08-03
    公开日:2017-02-10
    发明作者:Frederic Mayer；Frederic Barbier；Stephane Gesset
    申请人:e2v Semiconductors SAS；
    IPC主号:
    专利说明:

    METHOD FOR CONTROLLING AN ACTIVE PIXEL IMAGE SENSOR
    TECHNICAL FIELD The invention relates to electronic image sensors operating from pixels active in MOS technology. More specifically, the invention relates to a method for controlling the different transistors that constitute the active pixel.
    State of the art
    The active pixels most often comprise a photodiode transforming the received photons into electrical charges, and several MOS transistors making it possible to control the reading of these charges and their conversion into electrical voltage. In a matrix sensor, the pixel lines are addressed individually and the voltages from the pixels are applied to column conductors common to the pixels of the same column. Reading circuits at the bottom of the column make it possible to read and convert in digital the voltages present on the columns. For example, the voltages present on the columns are sampled for each line of pixels addressed. The samples are stored in read circuit capacities. The samples are then converted to digital by an analog-to-digital converter (for example a converter for each column of pixels).
    Active pixels using a photodiode generally comprise at least four transistors: a transfer transistor serves to discharge the charges of the photodiode to a so-called reading node, which is a capacitive charge storage node; a read transistor which is mounted as a voltage follower and whose gate is connected to the read node to establish on its source a voltage representing the voltage of this node; a line selection transistor controlled by a line conductor for selecting an entire row of pixels and connecting the output of the follower transistor of each pixel to the column conductor corresponding to that pixel and thereby to the reading circuit at the bottom of the column; and a reset transistor for resetting the potential of the read node to a reference value.
    The measurement of the quantity of charges generated by the photodiode is obtained by making the difference between the potential level of the reading node obtained after the transfer, and the reference potential level after re-initialization of the reading node.
    Active pixel structures can be controlled in different ways. In particular, the capture of the images can be done using the so-called "global shutter" technique where all the pixels integrate charges generated by the light during an integration period which is the same for all. Then the pixels are read line by line. In the so-called "rolling shutter" sliding window capture technique, the integration period is shifted in time from one pixel line to the other.
    The "global shutter" technique makes it possible to avoid distortion effects when images of moving objects are captured.
    In an active pixel structure with four or five transistors, the sequencing of the integration phase common to all the pixels is as follows: the time of an initialization control pulse, the evacuation of the charges is forced all the photodiodes. The end of the pulse sets the beginning of the integration time of the photodiodes: they can again accumulate the charges generated under the effect of the light to which they are exposed. The evacuation of the charges can be obtained by simultaneously conducting the time of the initialization pulse, the transfer transistor and the resetting transistor of the read node. The charges are then discharged to the drain of the reset transistor. But it is generally preferred to use a fifth specific transistor, whose source is connected to the photodiode of the pixel, and the charges are discharged to the drain of this transistor. all the transfer transistors are turned on simultaneously, the time of a control pulse applied to their gate: the charges generated and accumulated by each photodiode since the beginning of the current integration time, flow into the reading node associated. It is the end of this transfer control pulse that sets the end of the integration time for all the pixels.
    After each integration period, the reading phase of the pixels can begin. It's a sequential reading, line by line. For each of the pixels of a line, the selection transistor of the pixel is turned on, the time of a selection control pulse, and in this time: the signal level which is established on the column conductor is sampled in the reading circuit at the foot of the pixel column; then, the time of a reset control pulse, the initialization transistor of the reading node is turned on and the reference level which is established on the column conductor is sampled in the reading circuit.
    The read circuit can then output a measurement of the difference between the signal level and the reference level. But this level is not an accurate measure of the amount of charge generated in the photodiode because the random noise said kTC is not eliminated. Indeed, this noise is generated by resetting the read node by the reset transistor and results in the fact that the potential at which the reading node is established is not quite certain.
    In order to eliminate this uncertainty, in order to improve the dynamics of the sensors towards the low light levels, it is necessary that the signal level is established on the reading node after its reset, so that this signal level takes into account this uncertainty. That is, the read node must first be initialized, the corresponding reference potential level sampled, then the signal level set (transfer) to then sample the signal level. We speak of correlated double sampling, called "CDS". With a structure with four or five transistors as presented, we only know how to do this with a "rolling shutter" type of integration. We do not know how to do it in "global shutter" type integration mode. Thus it has been possible to propose in the prior art structures comprising a memory node between the photodiode and the reading node. The memory node will make it possible to keep the charges generated by the photodiode after each of the integration times common to all the pixels, the time in each pixel line, to initialize the reading node of the pixels, to sample the level of corresponding reference in the read circuit of each of the pixels of the line, then to dump the loads of the memory node in the read node and to sample the signal level in the read circuit. These intermediate memory stage structures thus make it possible to use the "global shutter" capture technique and a correlated double sampling, allowing the precise measurement of the quantity of charges generated in the pixel photodiode for the integration period concerned. In practice, two transfer transistors (or gates) are provided, one between the photodiode and the memory node, and a second between the memory node and the reading node. The first transfer transistor between the photodiode and the memory node is then the one that controls the end of each integration time for all the pixels at the same time, which end coincides with the end of the transfer control pulse in the node. memory. The second transfer transistor is used in the pixel line reading phase.
    Examples of such structures can be found with a memory node between the photodiode and the read node in publications FR2961631, JP20063115150.
    In the invention, we are interested in these active pixel structures which comprise a memory node between the photodiode and the reading node, the correlated double sampling function thus being integrated into the pixel. These structures make it possible both to control the image capture by all the pixels simultaneously in the same integration time ("global shutter" function) and to perform a "CDS" reading of the pixels, line by line.
    These structures offer a downward dynamic that is optimized since they are low noise reading (CDS read).
    In the presence of strong light, there is however a risk of saturation of the photodiode, which limits the upward dynamic. However, the maximum storage capacity of the photodiodes depends on the surface occupied by the photodiode, which determines the size of the pixel. We do not try to increase it; the tendency is even to reduce it, and to compensate for the loss of aperture by the use of microlenses to focus the light on the photodiodes of the pixels. Summary of the invention
    According to the invention, in order to improve the upward dynamics of these sensors, it is proposed to adopt the following two measurements: firstly, it is expected that the storage capacity of the loads of the memory node is at least N times greater than the charge storage capacity of the photodiode (N integer greater than or equal to 2); on the other hand, it is planned to make N charge transfers from the photodiode to the memory node regularly spaced over the integration time.
    It is generally easy to provide a memory node having a storage capacity several times greater than the storage capacity of the photodiode without this resulting in an excessive reduction of the optical aperture of the pixel. Indeed, the memory node can be achieved by an insulated gate, whose capacity per unit area is much greater than the capacity per unit area of the photodiode. The invention thus relates to a method for controlling the active pixels of an image sensor, the active pixel comprising a photosensitive element, a reading node and a memory node between the photodiode and the reading node, and at least a first charge transfer transistor between the photosensitive member and the memory node, a second charge transfer transistor between the memory node and the read node, a read node resetting transistor, a follower transistor having its gate connected to the read node and a pixel select transistor which is connected between the source of the follower transistor and a column driver. The control method is characterized in that during each integration period, it performs N charge transfers from the photosensitive element to the memory node, with the memory node that is configured with a charge storage capacity that is at least N times that of the photosensitive element, N integer greater than two, where the N transfers are regularly spaced and obtained by application at regular intervals during said integration period, N control pulses on the gate of the first transfer transistor. The invention also relates to an image pickup method in an active pixel sensor comprising at least one line of active pixels in which the active pixels each comprise a photosensitive member, a read node and a memory node between the photosensitive member. and the read node, and at least one first charge transfer transistor between the photosensitive member and the memory node, a second charge transfer transistor between the memory node and the read node, a resetting transistor of the reading node, a follower transistor having its gate connected to the read node and a pixel selection transistor which is connected between the source of the follower transistor and a column driver, the display method being such that each cycle of integration and reading, it controls a common integration time on all the pixels simultaneously, then a reading phase of correlated double-sampling type pixels of each line successively. It is characterized in that during each common integration time, the display method simultaneously controls in all the pixels N charge transfers from the photosensitive element to the memory node, regularly spaced, N integer greater than or equal to 2, with the memory node which is configured with a charge storage capacity which is at least N times that of the photosensitive element, the N transfers being obtained by application at regular intervals during said common integration time, N control pulses on the gate of the first transfer transistor, and the end of the Nth transfer setting the end of the common integration time.
    Preferably, the read node has at least N times the charge storage capacity of the photosensitive member.
    Preferably, N is chosen to be 2 or 3. Other characteristics and advantages of the invention are presented in the following description, with reference to the appended drawings in which: FIG. 1 illustrates a general active pixel structure to which invention can apply; FIG. 2 is a timing diagram of the control signals of an active pixel according to an image taking method according to the invention. FIGS. 3a to 3d show the diagrams of the potentials in the pixel structure corresponding to different steps a) to d) of the integration time; and FIGS. 4a to 4c show the diagrams of the potentials in the pixel structure corresponding to different steps a ') to c') of the reading phase.
    Detailed description
    The active pixels are made in CMOS technology in a doped (for example P-doped) semiconductor active layer and furthermore comprise photodiodes, which are in principle self-polarized "pinned" photodiodes, capacitive storage nodes and transistors. Their achievements utilize the various CMOS technologies well known to those skilled in the art.
    For the explanations, it is placed in the context of a P-doped semiconductor active layer substrate, biased to a zero reference potential and whose circuits are powered by a positive supply voltage, denoted Vdd. One of ordinary skill in the art knows that polarizations should be inverted in the context of an N-doped semiconductor active layer substrate.
    FIG. 1 is a circuit diagram of a general active pixel structure with photosensitive element, memory node and read node, to which the invention can be applied. In this example, the pixel PIX comprises a photodiode PHD, a first capacitive storage node called memory node and denoted MN, a second capacitive storage node called reading node and denoted SN and at least 5 transistors which are: a first transistor transfer device TRAi (in practice a simple transistor gate), for discharging charges from the photodiode PHD to the memory node MN. a second transfer transistor TRA2 (in practice a simple transistor gate), making it possible to empty the memory node MN in the reading node. a reset transistor RST of the reading node SN, whose source is electrically connected to the reading node and the drain is connected to the positive supply voltage Vdd. a follower transistor SF whose gate is electrically connected to the read node SN, and the drain is biased to the supply voltage Vdd. a selection transistor SEL which receives on its gate a command for selecting the line of the pixel, the drain of which is electrically connected to the source of the follower transistor and whose source is connected to a column conductor (Col) of the matrix (The pixels being organized in a matrix manner into rows of pixels and pixel columns), each column conductor being connected at the foot of the column, to a read circuit CL common to all the pixels of the column.
    It may include a sixth transistor AB, which allows the initialization of the photodiode, allowing the evacuation of the charges through its drain. An advantage of this sixth transistor is that it allows a so-called anti-glare function, that is to say by polarizing its gate at a determined voltage below the transistor conduction threshold, the potential can be adjusted. the barrier of the semiconductor region under the gate, at a level which allows the evacuation of excess charges in the photodiode, by the drain of the transistor. When not provided the initialization of the photodiodes is obtained by activating together in each pixel, the transistors TRA-i, TRA2 and RST.
    Note that some transistors of the pixel can be in practice shared between at least two pixels, which can be interesting when one seeks to make small pixels with a high filling factor. For example, the follower transistor and the line selection transistor are shared between two or four pixels of the same column. The initialization transistor of the photodiode can also be shared between at least two pixels. The active layer area required for controlling the pixels is then reduced. The invention applies equally well to these shared transistor pixel structures.
    The PHD photodiode is usually a self-polarized photodiode at a Vpin voltage defined by the technology, that is to say that it has on the diffused N-type region, a P-type surface diffused region and the superficial region is worn. to the reference potential (zero) of the substrate.
    The read node SN, which is the equivalent of a capacitance, is in practice constituted by a floating potential N-doped semiconductor region. The storage capacity of the charges of the reading node corresponds at least to that of the photodiode. This capacity depends in particular on the concentration of dopants and the geometry of the memory node.
    The memory node MN is the equivalent of a capacity for storing the charges generated and accumulated by the photodiode at the end of an integration period. In practice, this memory node is not a floating broadcast like the reading node. It must indeed be possible to set its potential at a determined level which must be greater than the photodiode voltage Vpin, at least in the charge transfer phase of the photodiode to the memory node; and which must be less than the supply voltage Vdd, at least in the load transfer phase of the memory node to the read node. Its potential can therefore be variable, depending on the phase concerned, that is to say according to whether the memory node is the source or destination of the transferred loads. But it can also be fixed. In the rest of the explanation, and in the drawings it is this option (fixed potential) which is represented, for simplicity.
    For example, the memory node is a semiconductor region surmounted by a gate, and this gate is biased to a potential which makes it possible to establish the memory node semiconductor region under the gate at a determined potential level between the Vpin level. of the photodiode and Vdd. The charge storage capacity under this gate then depends on the gate capacity (and therefore its geometry), the dopant concentration, etc. There are other embodiments of the memory node in the prior art of transistors said to (at least) six transistors. For example, patent publications WO2006130443, US598629, or FR2961631.
    In an example where the substrate is of the P type, these different transistors will be of NMOS type, that is to say with source and drain regions which are N type diffusions on either side of a P-type channel, under the gate.
    This term "transistor" is used to facilitate understanding in terms of electrical diagram such as the diagram of FIG. 1. However, in the physical constitution of the pixel, these transistors are not necessarily all conventionally constituted, independently of the other elements. of the pixel, with a source region, a drain region, a channel region separating the drain source and an insulated gate above the channel. In the actual physical constitution of the pixel, some transistors are in fact essentially constituted by an insulated gate to which a control potential can be applied. Thus, for example, the first transfer transistor TRAi will be constituted by a simple transfer gate TRArg isolated from the substrate, surmounting a P-type channel region which is situated between the N region of the PHD photodiode (source of TRA). ι) and the region N of the memory node NM (drain of TRA-i). Likewise: the source of the second transfer transistor TRA2 may be the region N of the memory node NM, and the drain of this transistor TRA2 may be the region N of the reading node SN. Also the source of the initialization transistor AB may be the N region of the photodiode which accumulates charges generated by the light; and the source of the RST transistor may be the N region of the read node. The invention is not directed to a particular active pixel technology, but to the use of a photodiode active pixel structure, read node, and memory node between the photodiode and read node, for example, a structure such as described above with or without anti-glare transistor AB. Also, the active pixel structure may include one or more transistors shared with at least one other pixel.
    In the invention, the following two measurements are provided for controlling the active pixel: the storage capacity of the charges of the memory node is at least N times greater than the charge storage capacity of the photodiode (N greater than or equal to at 2); and N load transfers from the photodiode to the memory node, which are regularly spaced, are carried out during each integration period during a periodic cycle of integration and reading of charges.
    Thus, as illustrated by the timing diagram of FIG. 2 in an example where N is equal to 3, after the beginning of the integration duration Tint (i) of an ith integration and reading cycle, fixed by the falling edge of the gate control pulse AB-g of the photodiode initialization transistor AB, N = 3 control pulses Tri-ι, Tri2 and Tri3 are successively applied to the gate TRArg of the first transistor of FIG. transfer, TRA-ι. And the falling edge of the last (Nth) pulse Tri3 marks the end of the current integration time Tint (i).
    In this way, in the case of a strong light environment, since the charges are transferred in several times during the integration period, the photodiode will be able to continue to accumulate charges throughout the integration period; the charges add up in the memory node at each transfer. The transfers are made at regular intervals, distributed equitably over the integration period Tint. That is to say, in this example where N = 3, there is substantially the same time interval between the beginning of integration and the 1st transfer, between the 1st and the 2nd transfer and between the 2nd and 3rd transfer .
    The two measures of the invention allow a pixel control method which has the technical effect of multiplying by N the charge accumulation capacity in each pixel over the duration of the integration period for a given capacitance of the photodiode. But this accumulation is not done in the photodiode. In the invention this accumulation is done in the memory node, by the fact of the discharge at regular intervals charges of the photodiode in this memory node over the entire integration period. As indicated above, we do not have the same technological limitations for the memory node as for the photodiode: it is therefore known to make a memory node with the desired storage capacity, at least equal to N times the capacity of the photodiode, without penalizing the size of the pixel.
    The reading node also has, preferably, a capacity at least equal to N times that of the photodiode.
    Preferably, N is 2 or 3.
    An active pixel sensor having the general (electrical) structure of FIG. 1 is especially adapted to an image taking method using an integration time common to all the pixels ("global shutter1"), with a reading of the pixels line by line, which is a correlated double sampling read, called reading CDS by the reading circuit at the bottom of each column.
    The control method according to the invention, which uses a memory node whose capacity is at least N times that of the photodiode is particularly suitable and advantageous for such an image taking method.
    Such an image taking method is now described based on the chronogram of the control signals of the transistors shown in FIG. 2 and diagrams of the potentials of FIGS. 3 and 4. In FIGS. 3 and 4, the value of FIG. potential of the different grids represented by a rectangle, is indicated by the background color of this rectangle: white = zero; black = VDD; gray = intermediate potential. Also, for ease of understanding, the steps and Figures 3 or 4 that correspond to the steps are referenced by the same letter. Finally, it will be noted that the timing diagrams and potential barrier representation of FIGS. 2 to 4 correspond to a P type active layer sensor context. A person skilled in the art will be able to transpose to an active layer sensor N context.
    We start from an initial state (not shown in Figures 3 and 4) in which the transistors are all in the non-conductive state.
    Each periodic cycle of integration and reading comprises a duration of integration Tint common to all the pixels, then a reading "CDS" of the pixels, line by line.
    As illustrated in FIG. 2, each integration and read cycle begins with a step a) of initialization of all the photodiodes simultaneously. A corresponding diagram of potentials in the structure is illustrated in Figure 3a.
    In this step, an initialization control pulse AB (G) is applied simultaneously to the gate AB-g of all the initialization transistors AB: they are then strongly conductive and empty the associated photodiode of all charges, via the drain DAB of this transistor. In a structure without an anti-glare transistor AB, the photodiodes would be initialized by making simultaneously conductive, the time of the initialization pulse, the first and second transfer transistors and the resetting transistor of the read node. The charges would then be discharged to the drain of the reset transistor.
    The end of the common initialization pulse AB (G) causes the transistors AB to go back to the non-conductive state and sets the Start-INT start of the integration time Tint (i) for all the photodiodes PHD simultaneously: they can at this point again accumulate the charges generated under the effect of the light to which they are exposed. This is step b) illustrated in Figures 2 and 3b. The following step c) (FIGS. 2 and 3c) consists in applying, by the control signal TRA1 (G) applied to all the gratings TRA-ig of the pixels, a first control pulse Tri-ι: the first transfer transistors TRAi are at this time strongly conductive and the charges generated and accumulated by each photodiode since the Start-INT start of the current integration time, flow into the associated memory node. In the example, the voltage level corresponding to the active state of the control pulse Trii is an intermediate level V1 between 0 and Vdd, to lower the potential barrier of the semiconductor region under the gate TRA-ig at a level that allows the charges of the photodiode to be discharged into the memory node. At the end of the control pulse Tri-i, the photodiode starts to accumulate the charges: it is the step d) (Figures 2 and 3d), until the next control pulse Tri2.
    Thus, steps c) and d) apply to all the pixels simultaneously and are repeated successively until the Nth transfer pulse, which is the third pulse Tri3 in the example illustrated in FIG. 2: the end of this N -th impulse marks the end Stop-INT of the current integration time Tint (i).
    A new integration time Tint (i + 1) of a new periodic cycle (integration and then reading) can begin, taking steps a, b, c, d described above.
    With the end stop-INT of the current integration time Tint (i), the next phase of reading the pixels can begin. It's a sequential reading, line by line. The selection of the pixels of a line consists in applying a selection control pulse on the gate SEL-g of the selection transistor SEL of the pixels (FIG. 2: command SEL (O) for the first row of rank 0), which has for effect for each pixel of the selected line to electrically connect the source of the follower transistor SF of the pixel to the corresponding column conductor and therefore to the reading circuit CL, the time of this selection pulse. The CDS reading of the pixels of the selected line is performed in this selection time, and comprises the following sequence of steps a ') to d'): - a ') the gate RST-g of the node resetting transistor The reading of the pixels of the selected line is drawn at the zero potential (FIG. 2: control signal RST (O) at zero for the line of rank 0), this grid being maintained at Vdd otherwise. The potential of the column conductor then establishes a reference level that is sampled in the reading circuit at the bottom of the column. This sampling is shown in Figures 2 and 4a by the SHR command. b ') the second transfer transistor TRA2 of the selected line is turned on, the time of a level control pulse Vdd applied to their gate TRA2-g (signal TRA2 (0) for the selected line of rank 0 - Figure 2), allowing the transfer of the loads of the memory node in the reading node (Figures 2 and 4b). c) at the end of this transfer pulse, the potential of the column conductor is established at a signal level representative of the quantity of charges in the reading node, and this signal level is sampled in the signal circuit. reading at the bottom of the column (SHS, Figures 2 and 4c). -d ') The gate RST-g of the transistor is brought back to the potential Vdd (RST (0) = Vdd) then the line is deselected (end of the selection pulse SEL (O) - Figure 2).
    Steps a 'to apply simultaneously to all the pixels of the selected line.
    The sequence of the reading steps a ') and d') is repeated for each of the rows of pixels successively, as illustrated in FIG. 2 for the next line of rank 1, with the corresponding control signals SEL (1), RST ( 1) andTRA2 (1).
    At the same time as the read phase following an integration duration Tint (i) takes place, or after this reading phase, a new integration duration (Tint (i + 1)) of an integration cycle and next reading can start.
    However, the reading of all the lines must be completed before the first transfer pulse Tri1 produced after a duration Tint (i + 1) / N according to the beginning of the next integration time Tint (i + 1). The invention which has just been described makes it possible to improve the dynamics of an active pixel with an intermediate memory node between the photosensitive element and the reading node, by avoiding technological constraints, without increasing the surface area of the photosensitive element. One can even consider decreasing this photosensitive element area by offsetting the loss of fill factor by using a microlens on each pixel to focus the light toward the photosensitive surface of the pixel. The invention is particularly advantageous for miniaturized sensors if it is furthermore envisaged to implement it with memory node technologies which offer a capacitance per unit area which is intrinsically greater than that permitted by pinned photodiode technologies. .
    权利要求:
    Claims (6)
    [1" id="c-fr-0001]
    A method of controlling an active pixel in an image sensor, the active pixel structure (PIX) comprising a photosensitive member (PHD), a read node (SN) and a memory node (MN) between the photosensitive member and the read node, and at least one first charge transfer transistor (TRA) between the photosensitive member and the memory node, a second charge transfer transistor (TRA2) between the memory node and the read node , a reset transistor (RST) of the read node, a follower transistor (SF) having its gate connected to the read node and a selection transistor (SEL) of the pixel which is connected between the source of the follower transistor and a column conductor (Col), the control method being characterized in that it comprises N charge transfer from the photosensitive member to the memory node regularly spaced during the integration time, N integer greater than two, controlled by applicatio n at regular intervals during said integration period, N control pulses (Tri-ι, Tri2, Tri3) on the gate (TRArg) of the first transfer transistor, the memory node being configured with a charge storage capacity which is at least N times that of the photosensitive element.
    [2" id="c-fr-0002]
    The control method of claim 1, wherein the read node has at least N times the charge storage capacity of the photosensitive member.
    [3" id="c-fr-0003]
    3. Control method according to claim 1 or 2, wherein N is 2 or 3.
    [4" id="c-fr-0004]
    An image pickup method in an active pixel sensor comprising at least one active pixel line, wherein the active pixels each comprise a photosensitive member (PHD), a read node (SN), and a memory node (MN). ) between the photosensitive member and the read node, and at least one first charge transfer transistor (TRA-i) between the photosensitive member and the memory node, a second charge transfer transistor (TRA2) between the node memory and the read node, a reset transistor (RST) of the read node, a follower transistor (SF) having its gate connected to the read node and a selection transistor (SEL) of the pixel which is connected between the source of the follower transistor and a column conductor (Col), the image taking method being such that at each integration and read cycle, it controls a common integration time on all the pixels simultaneously, and then a phase type reading correlatively double-sampling the pixels of each line successively, characterized in that during each common integration time, the image-taking method simultaneously controls, in all the pixels, N charge transfers from the photosensitive element to the memory node, regularly spaced, N integer greater than or equal to 2, with the memory node which is configured with a charge storage capacity which is at least N times that of the photosensitive element, the N transfers being controlled by application at regular intervals during said integration time, N control pulses (Tri-ι, Tri2, Tri3) on the gate (TRA-ig) of the first transfer transistor, and the end of the Nth transfer setting the end of the integration time.
    [5" id="c-fr-0005]
    The image pickup method of claim 4, wherein the read node has at least N times the charge storage capacity of the photosensitive member.
    [6" id="c-fr-0006]
    The image pickup method of claim 4 or 5, wherein N is 2 or 3.
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    TW201720137A|2017-06-01|
    EP3332548B1|2020-04-15|
    US20180367748A1|2018-12-20|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    EP2247093A2|2009-04-30|2010-11-03|Omnivision Technologies, Inc.|Image sensor with global shutter|
    US20110019045A1|2009-07-26|2011-01-27|Chi-Shao Lin|Method and apparatus for simultaneous electronic shutter action frame storage and correlated double sampling in image sensor|
    EP2634595A1|2012-03-01|2013-09-04|Omnivision Technologies, Inc.|Circuit configuration and method for time of flight sensor|
    US20140247378A1|2013-03-01|2014-09-04|Apple Inc.|Exposure control for image sensors|
    CN101083713B|2003-02-07|2012-07-04|（株）赛丽康|A cmos active pixel and a operating method there of|
    JP2006311515A|2005-03-29|2006-11-09|Konica Minolta Holdings Inc|Solid-state image-sensing device|
    KR100691183B1|2005-06-21|2007-03-09|삼성전기주식회사|Image sensor with anti-saturation function of pixel level|
    US7674648B2|2007-03-21|2010-03-09|Eastman Kodak Company|Extended dynamic range using variable sensitivity pixels|
    JP5568880B2|2008-04-03|2014-08-13|ソニー株式会社|Solid-state imaging device, driving method of solid-state imaging device, and electronic apparatus|
    JP5258551B2|2008-12-26|2013-08-07|キヤノン株式会社|Solid-state imaging device, driving method thereof, and imaging system|
    US9000500B2|2009-12-30|2015-04-07|Omnivision Technologies, Inc.|Image sensor with doped transfer gate|
    GB2477083A|2010-01-13|2011-07-27|Cmosis Nv|Pixel structure with multiple transfer gates to improve dynamic range|
    JP5616106B2|2010-04-14|2014-10-29|浜松ホトニクス株式会社|Solid-state imaging device|
    FR2961631B1|2010-06-18|2012-07-27|E2V Semiconductors|PIXEL IMAGE SENSOR WITH SIX TRANSISTORS|
    JP5721405B2|2010-11-22|2015-05-20|キヤノン株式会社|Imaging system, control method thereof, and program|
    JP5673063B2|2010-12-15|2015-02-18|ソニー株式会社|Solid-state imaging device, driving method, and electronic apparatus|
    EP2697311A1|2011-04-12|2014-02-19|Hewlett-Packard Industrial Printing Ltd.|Mill base composition and uv curable ink composition comprising same|
    JP2014160930A|2013-02-19|2014-09-04|Sony Corp|Solid-state imaging element, method for driving the same, and electronic apparatus|
    JP5968350B2|2014-03-14|2016-08-10|キヤノン株式会社|Imaging apparatus and imaging system|FR3046897B1|2016-01-19|2018-01-19|Teledyne E2V Semiconductors Sas|METHOD FOR CONTROLLING AN ACTIVE PIXEL IMAGE SENSOR|
    EP3883692A1|2018-11-19|2021-09-29|Berkeley Lights, Inc.|Microfluidic device with programmable switching elements|
    CN110336965B|2019-06-28|2021-10-22|西安理工大学|Active pixel swing extension system and method for CMOS image sensor|
    CN112437236A|2020-11-24|2021-03-02|长春长光辰芯光电技术有限公司|Pixel exposure method|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1557460|2015-08-03|
    FR1557460A|FR3039928B1|2015-08-03|2015-08-03|METHOD FOR CONTROLLING AN ACTIVE PIXEL IMAGE SENSOR|FR1557460A| FR3039928B1|2015-08-03|2015-08-03|METHOD FOR CONTROLLING AN ACTIVE PIXEL IMAGE SENSOR|
    US15/747,057| US10587830B2|2015-08-03|2016-07-29|Method for controlling an active pixel image sensor|
    JP2018505660A| JP2018523945A|2015-08-03|2016-07-29|Method for controlling an active pixel image sensor|
    KR1020187003298A| KR20180036969A|2015-08-03|2016-07-29|Method for controlling an active pixel image sensor|
    CN201680045708.6A| CN107852473B|2015-08-03|2016-07-29|Method for controlling active pixel image sensor|
    PCT/EP2016/068221| WO2017021328A1|2015-08-03|2016-07-29|Method for controlling an active pixel image sensor|
    EP16745728.2A| EP3332548B1|2015-08-03|2016-07-29|Method for controlling an active pixel image sensor|
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    TW105124338A| TWI705711B|2015-08-03|2016-08-01|Method for controlling an active-pixel image sensor|
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