• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a telephone line SLIC protection structure (3, 5) against overvoltages below a negative threshold or above a positive threshold, comprising at least one thyristor (32, 34) connected between each the telephone line and a reference potential (GND), in which for all the thyristors a metallization corresponding to the main electrode side trigger is in contact, by the entirety of its surface, with a corresponding semiconductor region; and the trigger (36, 38) is connected directly to a voltage source (58) defining one of said thresholds.
    公开号:FR3039014A1
    申请号:FR1556647
    申请日:2015-07-13
    公开日:2017-01-20
    发明作者:Jean-Michel Simonnet；Christian Ballon
    申请人:STMicroelectronics Tours SAS；
    IPC主号:
    专利说明:

    TELEPHONE LINE PROTECTION AGAINST OVERVOLTAGES
    Field
    The present application relates to a protection structure of an electronic circuit connected to a telephone line, against overvoltages due, for example, to lightning.
    Presentation of the prior art
    Figure 1 shows a protective structure of an electronic circuit connected to a telephone line corresponding to Figure 2 of US8687329 (B10278) of C. Appere, A. Bremond, and C. Ballon. An electronic circuit 1 for sending and receiving telephone signals, or SLIC (of the English "Subscriber Line Interface Circuit") is connected to a telephone line consisting of two conductors 3 and 5, at voltages Vpjp and Vrjnq. Sudden overvoltages, for example due to lightning, can occur on the conductors 3 and 5, and are likely to damage the circuit 1. The conductors 3, 5 are connected to a protective structure 7 capable, when the voltage on the one of the conductors comes out of an interval defined by two voltage thresholds, to discharge the overvoltage to a ground 9. The voltage thresholds are defined by sources of supply voltage 11 of positive potential Vp and 13 of negative potential Vp. The protective structure 7 comprises two cathode gate thyristors 15 and 17 whose cathodes are respectively connected to the conductors 3 and 5, and whose anodes are grounded. The triggers of the thyristors 15 and 17 are respectively connected to the emitters of two NPN transistors 19 and 21, the collectors of which are connected to ground 9, and the bases are connected to the supply voltage source 13 of negative potential Vp . The protective structure 7 also comprises two anode gate thyristors 23 and 25 whose anodes are respectively connected to the conductors 3 and 5, and whose cathodes are connected to the ground 9. The triggers of the thyristors 23 and 25 are respectively connected. to the emitters of two PNP transistors 27 and 29, whose collectors are connected to the ground 9, and the bases are connected to the supply voltage source 11 of positive potential V ^.
    In normal operation, the voltages of the conductors 3 and 5 remain between and V ^. All transistors are blocked, as are all thyristors.
    In case of negative overvoltage on the conductor 3, lower than the negative potential Vp the potential of the base of the transistor 19 becomes greater than the potential of its emitter, and the transistor 19 becomes on, which causes the closure of the thyristor 15. As long as it lasts the overvoltage on the line, the thyristor 15 remains on and discharges the overvoltage to ground 9.
    In the case of a negative overvoltage below the negative potential Vp on line 5, the operation is the same as that described for the case of a negative overvoltage on line 3, and involves thyristor 17 and transistor 21.
    Similarly, in the case of a positive overvoltage greater than the positive potential appearing on line 3 or 5, the operation is similar to the case of a negative overvoltage. A positive overvoltage on line 3 involves the anode gate thyristor 23 and the PNP transistor 27. A positive overvoltage on line 5 involves the anode gate thyristor 25 and the PNP transistor 29.
    After the end of an overvoltage, the thyristor involved opens only when the current passing through it becomes lower than its holding current. It is therefore necessary that the thyristor holding current is higher than the maximum current likely to flow in the telephone line. The maximum current is, for example, of the order of 150 mA. In order to obtain high holding currents, the thyristors are provided with emitter short circuits, as described, for example, in US Pat. No. 5,245,424 (B1712) by R. Pezzani and E. Bernier.
    A disadvantage of short-circuit thyristors of transmitters is that their sensitivity is low, i.e. they require a high trigger current to enter conduction. In addition, in the absence of overvoltage, no current must be able to flow between the protective structure and the conductors of the telephone line, whose voltages are between Vp and Vp. However, in each of the thyristors, the presence of short-circuits emitters allows the flow of a current between the trigger and the conductor of the telephone line connected to the thyristor.
    Consequently, a transistor is provided so that the junction between the emitter and the transistor base blocks the passage of a current in the absence of overvoltage. This transistor is also used to amplify the current delivered by the potential supply sources Vp and Vp to reach the trigger currents necessary for the priming of the thyristors. summary
    We seek here to provide a telephone line interface protection structure against overvoltages, at least partially overcoming some of the disadvantages of existing solutions.
    Thus, an embodiment provides a telephone line SLIC protection structure against overvoltages below a negative threshold or above a positive threshold, comprising at least one thyristor connected between each conductor of the telephone line and a potential of reference, in which for all the thyristors a metallization corresponding to the main electrode side trigger is in contact, by the entirety of its surface, with a corresponding semiconductor region; and the trigger is connected directly to a voltage source defining one of said thresholds.
    According to one embodiment, adapted to the case where the positive threshold is zero, each conductor of the telephone line is coupled to the anode of a diode and to the cathode of a cathode gate thyristor, the cathodes of the diodes and the anodes of the thyristors being coupled to the reference potential; a common negative voltage source being connected to the two triggers of the two thyristors.
    According to one embodiment, each line is connected to the cathode of a cathode gate thyristor and to the anode of an anode gate thyristor, the anodes of the cathode gate thyristors and the cathodes of the thyristor gate thyristors. anode trigger being coupled to the reference potential; the triggers of the cathode gate thyristors being directly connected to a common negative voltage source defining the negative threshold; and the gates of the anode gate thyristors being directly connected to a common positive voltage source defining the positive threshold.
    According to one embodiment, thyristors and diodes are made in the same monolithic component.
    According to one embodiment, all the thyristors are made in the same monolithic component.
    According to one embodiment, at least one of the voltage sources is a power supply of the SLIC.
    According to one embodiment, at least one of the voltage sources comprises at least one battery.
    Brief description of the drawings
    These and other features and advantages will be set forth in detail in the following description of particular embodiments made in a nonlimiting manner in relation to the appended figures among which: FIG. 1, previously described, represents a protective circuit against overvoltages below a negative threshold or above a positive threshold, connected to a telephone line; FIG. 2A shows an embodiment of a protection circuit against overvoltages below a negative threshold or above a positive threshold, connected to a telephone line; FIG. 2B is a sectional view of an example of a monolithic component implementing the circuit of FIG. 2A; FIG. 3A shows a structure for protecting against overvoltages below a negative threshold or greater than zero, connected to a telephone line, according to another embodiment; Figure 3B is a sectional view of an example of a monolithic component implementing the circuit of Figure 3A.
    detailed description
    The same elements have been designated with the same references in the various figures and, moreover, the various figures are not drawn to scale. For the sake of clarity, only the elements that are useful for understanding the described embodiments have been shown and are detailed.
    In the following description, when reference is made to absolute position qualifiers, such as the terms "high", "low", "left", "right", reference is made to the orientation of the figures in FIG. a normal position of use.
    FIG. 2A shows an embodiment of a protection circuit against overvoltages below a negative threshold or above a positive threshold, connected to a telephone line, on the SLIC side. The two conductors 3 and 5 of the line, at voltages V ^ jp and Vrjnq, are connected to a protective structure 30. The structure 30 comprises two thyristors 32, 34 with cathode gate, having gates 36 and 38, and whose anodes are connected to GND ground. The cathode 40 of the thyristor 32 is connected to the conductor 3, and the cathode 42 of the thyristor 34 is connected to the conductor 5. The structure 30 also comprises two thyristors 44 and 46 with anode trigger, having triggers 48 and 50, and the cathodes are connected to GND ground. The anode 52 of the thyristor 44 is connected to the conductor 3, and the anode 54 of the thyristor 46 is connected to the conductor 5.
    A positive potential is provided by a voltage source 56, and a negative potential Vp is provided by a voltage source 58. Each voltage source can supply or absorb a current while maintaining its potential at a value close to V i or V p. The triggers 36 and 38 of the cathode gate thyristors are connected directly to the voltage source 58, and the gates 48 and 50 of the anode gate thyristors are connected directly to the voltage source 56. The voltage sources 56 and 58 may possibly be power sources of the SLIC, for example batteries or stabilized continuous power supplies.
    All thyristors are devoid of emitter short circuits, that is, in each of the thyristors, the metallization zone corresponding to the main electrode side trigger is in contact, by the entirety of its surface , with the corresponding semiconductor region, and is not in partial contact with the layer to which the trigger is connected.
    In normal operation, the voltages of the conductors 3 and 5 remain between and Vy, and the thyristors are blocked.
    If a negative overvoltage, more negative than Vp, occurs on the conductor 3, the voltage of the cathode 40 becomes lower than the voltage of the trigger 36. A current flows from the trigger 36 to the cathode 40. The thyristor 32 being free of emitter short-circuits, it is very sensitive and closes quickly, which allows to evacuate the surge to ground.
    At the moment of the end of the overvoltage, at first the thyristor 32 is still passing, and is traversed by a current, flowing from the ground to the conductor 3. As the thyristor is devoid of emitter short circuits, its holding current is low. Thus, the current flowing through the thyristor remains a priori higher than its holding current. However, since the gate of the thyristor is maintained at the potential Vp less than the potential of the cathode, a part of the current from the mass is diverted towards the voltage source 58 instead of flowing towards the cathode, which causes the opening of the thyristor. In other words, the charges present in the gate layer during the conduction of the thyristor are absorbed by the voltage source 58. These charges being no longer available to maintain the thyristor passing, it opens. This operation is possible because the voltage source 58 is a true voltage source capable of maintaining the potential VL while absorbing a portion of the current. This operation would be impossible if the potential Vp was defined, for example, by a Zener diode as described in the two aforementioned patents.
    In case of negative overvoltage, more negative than the potential Vp, on the line 5, the operation is identical and involves the cathode gate thyristor 34.
    In the case of a positive overvoltage greater than Vp on line 3 or 5, the operation is similar, and involves the corresponding anode gate thyristor 44 or 46.
    In the foregoing, it will be understood that comparisons of overvoltages to potential values are, where appropriate, at a near-diode voltage drop.
    Figure 2B is a sectional view of an example of a monolithic component implementing the circuit 30 of Figure 2A. The monolithic component is made from a semiconductor substrate 60 slightly doped N type, the semiconductor being for example silicon. The front face of the component is at the top of the section and the back is at the bottom. The component is divided into two symmetrical parts with respect to the axis of the figure. The left half contains thyristors 32 and 44, and the right half contains thyristors 34 and 46. Only the left half will be detailed here, the right half being symmetrical and its operation identical.
    The thyristors have a vertical structure and, at the rear of the component, a metallization 62 defines the reference potential, GND.
    The anode gate thyristor 44 is located between a metallization 64 on the front face and the metallization 62. It comprises an anode region 66 of the P type in contact with the metallization 64, a trigger zone 68 of the N type without contact. with the metallization 64 and which contains the region 66, a P type box 70 which contains the zone 68, a portion of the N type substrate 60, and a N-type strongly doped cathode layer 72 in contact with the metallization 62. The avalanche voltage P / N between the anode region 66 and the gate area 68 is greater than Vp. The gate area 68 is in contact, via a heavily doped N-type zone 74, with a metallization 76.
    The cathode gate thyristor 32 is located between a metallization 78 on the front face and the metallization 62. It comprises an N-type cathode region 80 in contact with the metallization 78, a P type trigger zone 82 without contact with the metallization. metallization 78 and which contains the region 80, a portion of the N-type substrate 60, a P type rear-face box 84, in contact with the metallization 62 via a strongly doped anode layer 86 of the type P. The avalanche voltage P / N between gate area 82 and cathode region 80 is greater than Vp. Trigger region 82 is in contact, via a heavily P-doped area 88, with a metallization 90. Typically, the component has channel stop regions 92.
    The metallizations 64 and 78 are intended to be connected together to the conductor 3 (Vpjp).
    The trigger metallization 76 of the thyristor 44 is intended to be in direct contact with the voltage source 56 of potential V 1. The trigger metallization 90 of the thyristor 32 is intended to be in direct contact with the voltage source 58 of potential Vp.
    FIG. 3A represents another embodiment of a protection structure adapted to cases where the positive threshold is zero, that is to say to the potential of the ground GND, to the near-direct diode voltage drop. The two conductors 3 and 5 of the telephone line are connected to a protection structure 100. The negative potential Vp is provided by a voltage source 58. The structure 100 comprises the thyristors 32 and 34, connected in the same manner as in FIG. protection structure 30 described above. The structure 100 also includes diodes 102 and 104 whose anodes are respectively connected to the conductors 3 and 5, and the cathodes are connected to GND ground.
    In case of negative overvoltage, the operation of the protective structure 100 is similar to that of the protective structure 30 of FIG. 2A. In case of positive overvoltage on the conductor 3, higher than the direct voltage drop of a PN junction, the overvoltage is deflected to ground through the diode 102. The operation is similar with the diode 104 in case of overvoltage positive on the driver 5.
    Figure 3B is a sectional view of an example of a monolithic component implementing the circuit of Figure 3A. The component is symmetrical about the axis of the figure, and only the left part will be described. This component is made from a weakly doped N-type substrate 60, provided with a metallization 62 on the rear face. The left part comprises the diode 102 and the thyristor 32, and the right part comprises the diode 104 and the thyristor 34. The thyristors 32 and 34 are made in the manner described in FIG. 2B. The diode 102 is formed between a front face metallization 106 and the metallization 62, its anode zone corresponds to a P type box 108, in contact with the metallization 106 via a heavily doped layer 110 of the type P, its cathode zone corresponds to a portion of the substrate 60 and a heavily doped N-type layer 112. The metallization 106 is in contact with the metallization 78 and is intended to be connected to the conductor 3.
    An advantage of the protective structures described herein, in which the thyristors are devoid of emitter short circuits, is that the operation does not require a transistor, which allows a reduction of the surface of the component, nor of external components (diodes or transistors) which reduces cost and bulk.
    Another advantage is that the thyristors without emitter short circuits are very sensitive, which allows a fast trigger and thus improves the quality of the protection.
    In addition, the characteristics of the thyristors can be chosen independently of the maximum current likely to flow in the telephone line. Thus, telephone lines of different characteristics may be protected by protective structures of the same characteristics.
    Particular embodiments have been described. Various variations and modifications will be apparent to those skilled in the art. In particular, although the making of the monolithic components has been described from an N-type substrate, it will be clear to those skilled in the art that they can be made from P-type substrates.
    权利要求:
    Claims (7)
    [1" id="c-fr-0001]
    1. Telephone line SLIC interface protection structure (3, 5) against overvoltages below a negative threshold or above a positive threshold, comprising at least one thyristor (32, 34) connected between each conductor of the telephone line and a reference potential (GND), in which for all the thyristors: a metallization (64, 78) corresponding to the main electrode on the gate side is in contact, by the entirety of its surface, with a semiconductor region (66, 80); and the trigger (36, 38) is connected directly to a voltage source (58) defining one of said thresholds.
    [2" id="c-fr-0002]
    2. Structure according to claim 1 adapted to the case where the positive threshold is zero, wherein: each conductor (3, 5) of the telephone line is coupled to the anode of a diode (102, 104) and to the cathode (40, 42) of a cathode gate thyristor (32, 34), the cathodes of the diodes and the anodes of the thyristors being coupled to the reference potential; a common negative voltage source (58) is connected to both triggers of the two thyristors.
    [3" id="c-fr-0003]
    3. Structure according to claim 1, wherein: each line is connected to the cathode (40, 42) of a cathode gate thyristor (32, 34) and to the anode (52, 54) of a thyristor Anode gate (44,46), the anodes of the cathode gate thyristors and the cathodes of the anode gate thyristors being coupled to the reference potential; the triggers (36, 38) of the cathode gate thyristors are directly connected to a common negative voltage source (58) defining the negative threshold; and the gates (48, 52) of the anode gate thyristors are directly connected to a common positive voltage source (56) defining the positive threshold.
    [4" id="c-fr-0004]
    4. Structure according to claim 2, wherein the thyristors (32, 34) and the diodes (102, 104) are made in the same monolithic component.
    [5" id="c-fr-0005]
    5. Structure according to claim 3, wherein all the thyristors (32, 34, 44, 46) are made in the same monolithic component.
    [6" id="c-fr-0006]
    The structure of claims 1 to 5, wherein at least one of the voltage sources (56, 58) is a SLIC power source.
    [7" id="c-fr-0007]
    7. Structure according to claims 1 to 6, wherein at least one of the voltage sources (56, 58) comprises at least one battery.
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    法律状态:
    2016-06-22| PLFP| Fee payment|Year of fee payment: 2 |
    2017-01-20| PLSC| Search report ready|Effective date: 20170120 |
    2017-06-21| PLFP| Fee payment|Year of fee payment: 3 |
    2018-06-21| PLFP| Fee payment|Year of fee payment: 4 |
    2020-06-23| PLFP| Fee payment|Year of fee payment: 6 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1556647A|FR3039014B1|2015-07-13|2015-07-13|TELEPHONE LINE PROTECTION AGAINST OVERVOLTAGES|
    FR1556647|2015-07-13|FR1556647A| FR3039014B1|2015-07-13|2015-07-13|TELEPHONE LINE PROTECTION AGAINST OVERVOLTAGES|
    US15/045,935| US10148810B2|2015-07-13|2016-02-17|Protection of a telephone line against overvoltages|
    CN201910011078.6A| CN109546640B|2015-07-13|2016-02-29|Overvoltage protection for telephone lines|
    CN201610113619.2A| CN106356827B|2015-07-13|2016-02-29|To the overvoltage protection of telephone line|
    CN201620153580.2U| CN205724872U|2015-07-13|2016-02-29|Structure and the excess voltage protection of overvoltage is avoided for protection circuit|
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