• 专利附录
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    • 专利摘要:
    This method is carried out in an installation comprising an enclosure (10), a support (20) for the substrate, a counter-electrode, at least one head (30) provided with at least one electrode (8) adapted to create an electric discharge , means for diffusing (42) an inert gas and injection means (7) of at least one active gas mixture to said support, comprising a reactive gas capable of being activated by said electric discharge, the means for injection being placed between the diffusion means and the support, the head and the support defining at least one outlet for the inert gas and / or the active gas mixture. According to this method, both the inert gas and the active gas mixture are introduced continuously to said support, the reactive gas is continuously activated in said electric discharge and the surface of said moving substrate is treated, evacuated continuously, by said outlet, the gaseous atmosphere of the internal volume comprising a fraction of the inert gas and of the active gas mixture, the effective section of the outlet is adjusted and / or the total flow rate of the inert gas and of the active gas mixture is adjusted, so that the internal volume of each head is slightly overpressure relative to the interior volume of the enclosure.
    公开号:FR3035122A1
    申请号:FR1553503
    申请日:2015-04-20
    公开日:2016-10-21
    发明作者:Eric Gat
    申请人:COATING PLASMA IND；
    IPC主号:
    专利说明:

    [0001] FIELD OF THE INVENTION The invention relates to a method of surface treatment of a moving substrate. It relates more specifically to a process in which the substrate is subjected to a plasma generated in a gaseous mixture, which leads to the modification of the surface state of this substrate and / or to the formation of a deposit on the aforementioned surface . The invention relates in particular to such a process, which can be carried out at a pressure close to atmospheric pressure, and which is suitable for the continuous surface treatment of polymer films in coils ("roll-to-roll" process "). STATE OF THE ART Methods are already known for modifying and improving the surface properties of a substrate by means of a plasma. Such properties of interest may be, for example, the surface energy or the adhesion properties of this substrate. The substrates targeted by the invention may be in particular insulators such as polymer films, or even metal films. According to these known methods, for the deposition of a thin solid layer on the surface of a substrate, this surface is subjected to a plasma created by an electric discharge in a gas and, simultaneously or subsequently, the substrate thus treated is exposed to a gaseous mixture which contains an active gaseous compound capable of inducing the deposition of this thin solid film. It is also known to continuously implement methods of treating a substrate by means of an electric discharge in a gaseous mixture, in which the substrate is set in motion at speeds of between about ten and several hundred hours. meters per minute, typically within a room. The latter contains, in addition to the electrodes necessary for the creation of the discharge, a device for injecting the active gas mixture, as well as means for evacuation of gaseous effluents.
    [0002] US-B-8 851 012 discloses a method of treating the surface of a substrate, using a head equipped with a first electrode, as well as a central channel for feeding a polymer or a carrier gas, via auxiliary channels. This document teaches certain dimensional ranges, especially as regards the distance between the substrate and the injection members of the various gaseous compounds. This document provides a spatial separation between the injection of a carrier gas and the diffusion of a plasma gas. FR 2,816,726 A describes a process of the above type, which is implemented by means of an installation comprising a chamber for receiving the electrodes. This installation 10 is further provided with auxiliary units, for respectively preventing the entry of air into the chamber, as well as the exit of the gaseous mixture from this chamber. Each auxiliary unit comprises a nitrogen injection slot for the creation, in use, of "knives" gaseous. Means are further provided for regulating the gas flow rates so as to maintain a pressure difference close to zero between the interior of the chamber and the outside atmosphere. However, the method described in FR-A-2,816,726 involves certain disadvantages. Firstly, it uses gaseous knives that involve a high consumption of nitrogen. In addition, the control of the conditions inside the chamber is relatively complex to implement. In particular, the pressure inside the chamber is difficult to regulate stably and reproducibly. In other words, this pressure is subject to significant variations, which are not favorable to the proper control of this process. Finally, the installation described in FR-A-2 816 726, allowing the implementation of this method, is relatively heavy and expensive.
    [0003] In view of the foregoing, it is an object of the present invention to overcome, at least partially, the disadvantages of the prior art discussed above. Another object of the invention is to propose a process which, while ensuring a reliable surface treatment of a substrate, in particular of the "roll to roll" type, at a pressure close to atmospheric pressure, makes it possible to reduce significantly the amount of inert gas consumed, compared to the prior art. Another object of the invention is to provide such a method, which is convenient to control and which can be implemented using a relatively simple installation.
    [0004] According to the invention, the above objectives are achieved by means of a method of surface treatment of a moving substrate, in an installation comprising an enclosure; a support for the substrate, received in said enclosure; a counter electrode; at least one head defining an interior volume open toward the support, said head being provided with at least one electrode adapted to cooperate with said counter electrode to create an electric discharge; diffusion means for diffusing an inert gas towards said support; and injection means, separate from the diffusion means, for injecting at least one active gas mixture into said support, this active gaseous mixture comprising a reactive gas capable of being activated by said electric discharge; the injection means being placed between the diffusion means and the support; the head and the support defining at least one outlet for the inert gas and / or the active gas mixture, wherein (i) introducing both the inert gas and the active gas mixture to said support, so as to pressing the active gas mixture against said support; (ii) reactive gas is activated in said electric discharge and the surface of said moving substrate is treated; (iii) evacuating, through said outlet, the gaseous atmosphere of the interior volume (V), said gaseous atmosphere comprising a fraction of the inert gas and the active gas mixture; (iv) adjusting the effective cross-section of the outlet and / or adjusting the total flow rate of the inert gas and the active gas mixture, so that the pressure difference (P1-P0; P2-P0) between the internal volume of each head and the interior volume of the enclosure is greater than 10 Pascal, 30 knowing that the steps (i) to (iv) are not necessarily chronological. The method according to the invention eliminates the use of input and output units associated with nitrogen knives, as known from FR-A-2 816 726. Therefore, this method allows a substantial reduction in inert gas consumption compared to this state of the art. The overall structure of the installation, allowing the implementation of the method of the invention, is significantly simplified.
    [0005] In addition, the Applicant has discovered that, surprisingly, injecting the active gas mixture in the vicinity of the substrate, while diffusing the inert gas from within the chamber itself, provides a quality plasma treatment. satisfactory. Indeed, this avoids any substantial leakage of this active gas mixture out of the chamber. In other words, substantially all of the reactive gas is deposited on the plasma-exposed surfaces. Without wishing to be bound by this theory, the inventors believe that this may be due to the fact that the gaseous mixture is repelled, or plated, against the substrate, under the effect of the inert gas. The latter also avoids any significant entry into the discharge zone defined by the electrodes, air optionally loaded with impurities such as dust, carried by the moving substrate. This plating effect of the gaseous mixture, by the inert gas, is also ensured by the slight overpressure of the head relative to the rest of the enclosure. The pressure difference between the interior volumes of this head and this chamber is typically greater than 10 Pascal (Pa). Advantageously, this difference is greater than 20 Pascal, in particular 50 Pascal.
    [0006] It will further be appreciated that the present invention is advantageous in terms of safety and flexibility with respect to the solution described in FR-A-2 816 726. Indeed, in this prior solution, the treatment chamber can not be used. placed at a high overpressure value, in order to avoid any significant leakage of nitrogen into the ambient atmosphere. As a result, there is a risk that this overpressure will be low, or that there will be a reversal of pressures likely to induce an inadvertent arrival of oxygen in the enclosure. The value of the overpressure used in the present invention can first be modified by adjusting the effective section of the outlet. This is typically achieved by acting on the position of the head relative to the support. In this case, if the head is moved away from the support, this tends to reduce the value of this overpressure whereas, if the head is brought closer, the value of this overpressure is increased. In addition or in substitution, it is also possible to act on the value of the overall gas flow, formed by the sum of the respective flow rates of the inert gas and of the active gas mixture. In this case, if this overall flow is increased, this tends to increase the value of this overpressure. On the other hand, a decrease in this overall flow rate is accompanied by a reduction of this overpressure value.
    [0007] According to other features of the invention: (a) the effective cross-section of the outlet is adjusted and / or the total flow rate of the inert gas and the active gas mixture is adjusted, so that the pressure difference between the volume interior of each head 5 and the interior volume of the enclosure is greater than 20 Pascal, in particular greater than 50 Pascal; (b) injecting the inert gas at a flow rate of between 1 and 10 liters per square meter, in particular between 2.5 and 5 liters per square meter; (c) injecting the active gas mixture at a flow rate of between 1 and 100 milliliters per square meter, in particular between 5 and 50 milliliters per square meter; (d) the ratio between the flow rate of the inert gas and the flow rate of the active gas mixture is between 100 and 10,000, in particular between 500 and 5,000; (e) positioning the head relative to the support, so that the height of the outlet is between 0.5 and 2.5 millimeters, in particular between 0.8 and 1.2 millimeters; (F) injecting the inert gas into at least one inert gas injection point, the distance between each inert gas injection point and the support being between 50 and 150 millimeters, especially between 75 and 125 millimeters; (g) the active gas mixture is injected into at least one gaseous mixture injection point, the distance between each gaseous mixture injection point and the support being between 0.5 and 3.0 millimeters, in particular between 1 and 0 and 1.5 millimeters; (h) measuring the oxygen concentration in the interior volume of each head and adjusting the effective cross section of the outlet and / or adjusting the total flow of the inert gas and the active gas mixture, if this measured concentration is outside a predetermined range; (I) the active gas mixture comprises, in addition to the reactive gas, a carrier gas; (j) using an inert gas of a first type, in particular nitrogen, and a carrier gas of a different type, in particular helium; (k) the reactive gas comprises at least one monomer and / or at least one dopant; (I) injecting a first active gas mixture comprising hydrogen as a reactive gas into at least one upstream injection member to remove at least a portion of the oxygen boundary layer present at the surface of the substrate, then injecting a second active gas mixture different from the first active gas mixture, in at least one downstream injection member, to the surface of the substrate released from at least a portion of said oxygen layer; (M) the or each upstream injection member is provided in an additional upstream chamber, separate from the chamber, while the or each downstream injection member is provided in the chamber; (N) the or each upstream injection member is provided in a first head, or upstream head, of the chamber, while the or each downstream injection member is provided in a second head, or downstream head, the enclosure; (o) the or each upstream injection member, thus the or each downstream injection member, are provided in a single head; (p) the substrate is passed through an auxiliary chamber placed upstream of the enclosure, and this substrate is pressed by means of at least one roller received in this auxiliary chamber, in order to at least partially eliminate the layer of air present on the surface of the substrate 10 (q) the internal volume of this auxiliary chamber is depressurized. These additional features (a) to (q) can be implemented individually or in any combination. The above objectives are also achieved by means of an installation for carrying out a method as above, comprising: an enclosure; a support for the substrate, received in said enclosure; a counter electrode; at least one head defining an interior volume open towards the support, said head being provided with at least one electrode adapted to cooperate with said counter electrode to create an electric discharge; diffusion means for diffusing an inert gas towards said support; and injection means, separate from the diffusion means, for injecting at least one active gas mixture into said support, this active gas mixture comprising a reactive gas capable of being activated by said electric discharge; the injection means being placed between the diffusion means and the support, the head and the support defining at least one outlet for the inert gas and / or the active gas mixture, this installation further comprising means for adjusting the the effective section of the outlet and / or means for adjusting the total flow rate of the inert gas and the active gas mixture. According to an advantageous characteristic, the installation further comprises an auxiliary chamber, placed upstream of the chamber, said auxiliary chamber being provided with at least one pressing roll adapted to at least partially eliminate the air layer present at the surface of the substrate.
    [0008] DESCRIPTION OF THE FIGURES The invention will be described below, with reference to the accompanying drawings, given solely by way of non-limiting examples, in which: FIG. 1 is a front view, illustrating an installation allowing the setting implementation of a surface treatment method according to the invention. FIG. 2 is a perspective view, illustrating an enclosure belonging to the installation of FIG. 1. FIG. 3 is a perspective view, illustrating on a larger scale a head 10 belonging to the installation of FIG. front wall of this head being omitted. FIG. 4 is a front view illustrating the head of FIG. 3. FIG. 5 is a front view illustrating a tube that belongs to the head of FIG. 3. FIGS. 6 and 7 are views on a larger scale, illustrating details VI and VII in Figure 5.
    [0009] FIG. 8 is a front view, illustrating on an even larger scale two electrodes and a tube which belong to the head of FIG. 3. FIG. 9 is a front view, illustrating an installation allowing the implementation of FIG. an alternative embodiment of the method according to the invention. Figures 10 and 11 are diagrammatic front views, similar to Figure 9, illustrating two alternative embodiments of the method according to the invention. Figure 12 is a front view, similar to Figure 9, illustrating an installation for implementing a further embodiment of the method according to the invention.
    [0010] The following numerals are used in the present description: 7, 7 ', 7 "Tubes 130 Width 30 L7 Length 7 V Internal Volume 30 D7 Diameter 7 E Input R7 Rotation Direction of 7 S Output d7 Distance between 7 and S 40 Upper part of 30 8, 8 ', 8 "Electrodes 42 Diffusers L8 Length of 8 50 Bottom of 30 18 Width of 8 60 Filter d8 Distance between 8 and S 71 Holes of 7 10 Enclosure 72 Holes of 7 110 Width of 10 L71 Length of 71 L10 Length of 10 76 Flange 3035122 8 11 Top wall of 10 78 Screed 12 Front wall of 10 d78 Distance between 7 and 8 13 Rear wall of 10 90 Source of nitrogen 14 Side wall of 10 91 Upstream 15 Sidewall 10 92 Downstream 16 Rails 94 Sensor 17 Drive 96 Controller 18 Window 97 Line 19 Door 98 Line 20 Drum 110 Enclosure R20 Rotation 20 116, 116 ', 116 "Rails SUB Substrate 1301 to 130, Heads 22 Nip 210 Enclosure 30 Head 221 Pre-chamber 31 Cover E210 Input of 210 32 Front wall of 30 S210 Output of 210 33 Rear wall of 30 E221 Input of 221 34 Side wall of 30 222, 222 'Rollers 35 Side wall of 30 224 Suction device L30 Length of 30 Detailed description Installation of the invention firstly comprises a body or enclosure 10, which has an upper wall 11 and peripheral walls, formed by parallel front and rear walls 13 and parallel side walls 14 and 15. for example, its length L10, namely the distance between the walls 12 and 13, is between 1000 mm and 2000 mm. By way of example, its width 110, namely the distance between the walls 14 and 15, is between 1000 mm and 2000 mm. The enclosure is also provided with a pipe 17, of a type known per se, for sucking an excess of gas out of the interior volume of the enclosure 10. As shown schematically in FIG. illustrates only the enclosure from the rear, rails 16 extend between the walls 12 and 13. They are fixed on these walls, by any appropriate means. The function of these rails will be described in the following. A window 18 and a door 19 are provided on the rear wall 13, to allow access to the rails 16.
    [0011] The installation further comprises a drum 20 which is rotated, in use, in the direction indicated by the arrow R20. This drum forms a support for the substrate SUB intended to be treated in accordance with the invention. In the present embodiment, this drum provides an additional counter electrode function, which cooperates with electrodes which will be described in the following. However, this counter electrode can be formed by another component of the installation. For example, the substrate is made of polypropylene, while its thickness is between 20 and 100 microns.
    [0012] In its upstream part, with reference to the displacement of the substrate, the drum is associated with a pressure roller 22 (called by the skilled person also "nip"), of a type known per se. This secondary roller 22 makes it possible to press the substrate against the drum 20, so as to avoid the formation of a layer of air between this substrate and this drum. This makes it possible to avoid any local defect of treatment on the substrate. Above the drum 20, a head 30 is provided, which is equipped with tubes and electrodes, as will be explained in the following. The width 130 of the head 30 is significantly smaller than that 110 of the enclosure. This head extends along an arc of the circle 20 defined by the drum 20, approximately centrally. The length L30 of this head is for example slightly less than that L10, particularly if the substrate covers substantially the entire length of the drum. However, if this substrate covers only a portion of this drum, the length L30 of this head may be substantially less than L10, so that the head does not protrude longitudinally beyond the substrate. With reference to FIGS. 3 and 4, the head 30 comprises a cover 31 and peripheral walls, formed by parallel front and rear walls 32 and 33, as well as by side walls 34 and 35. For example, it is made of PET (polyethylene terephthalate). For the sake of clarity, the front wall 32 is omitted in FIG. 3, while it is shown in FIG. 4. The upper parts of the side walls cooperate with the rails 16, in order to fix the head. In a preferred manner, this attachment makes it possible to mount the head 30 on the rails 16 in a removable manner, in particular by snapping.
    [0013] This head 30 defines an internal volume V which is open towards the drum 20. The latter defines, with each free edge 30E and 30S of the head, two spaces E and S respectively forming an input E and an output S. L input E corresponds to the upstream side, through which the substrate is admitted, while the output S corresponds to the downstream side. As will be described in more detail in the following, this output ensures the continuous evacuation of the gaseous atmosphere initially present in the volume V. The height of each space E and S, namely the distance between each free edge 30E, 30S and the support is typically between 0.5 and 2.5 millimeters, preferably between 0.8 and 1.2 millimeters. If this height is too low, the output of inert gas is insufficient and the lamination effect is not satisfactory. On the other hand, if this height is too high, there is not a sufficient pressure value between the head and the rest of the enclosure. In FIG. 1, the height HS is represented, the effective section of the output S being defined by the product (HS * L30) of the height HS by the length L30.
    [0014] The value of the height of each space E and S can be varied by moving the head 30 relative to the drum 20. This possibility is shown by the arrow T30 which emphasizes the translation movement of the head relative to the support, as well as only by the arrow R30 which emphasizes the rotational movement of this head relative to this support. As will be explained in the following, the modification of the relative position of the head and the support makes it possible to modify the effective section of the output. The head is divided into two parts by a filter 60, hereinafter referred to as upper 40 and lower 50. In its upper part 40, the head is provided with diffusion means 25 connected to a source of inert gas such as nitrogen, as will be described in the following. In the illustrated example, these diffusion means are formed of several diffusers 42, of any appropriate type. In FIG. 4, D42 is the injection distance, namely the distance between the outlet 30 of the diffusers 42 and the substrate SUB. These diffusers, which have a plurality of diffusion holes, are formed regularly on the surface of the head. This filter, which is known per se, has among others the function of improving the homogeneity of the nitrogen sent to the lower part 50 of the head.
    [0015] The lower portion 50 of the head first receives injection members of an active gas mixture. In the illustrated example, these members are injection tubes 7, 7 'and 7 ", three in number, or alternatively, a different number of injection members may be provided and / or provide that these injection members are structurally different from a tube, namely that they are formed for example by a perforated bar.The lower part 50 of the head further receives three electrodes 8, 8 'and 8 " , which are arranged alternately with respect to the tubes 7, 7 'and 7 ", in the direction of rotation of the drum In other words, the upstream tube 7 is placed between the side wall 34 and the upstream electrode 8, while the tubes 7 'and 7 "are placed between adjacent electrodes, namely 8, 8' and 8 ', 8".
    [0016] According to other variants not shown, the invention encompasses other mutual arrangements of tubes and electrodes. For example, two electrodes may be placed side by side, or a first tube may be disposed between an upstream electrode 8 "and the side wall 35. Two tubes may also be placed side by side, being arranged between two electrodes or between a side wall and an electrode.
    [0017] By way of example, the tubes are made of metal, or of plastics material, such as a polymeric material, in particular PET. They are connected to a not shown source of an active gas mixture, in order to perform a plasma treatment of the substrate SUB.
    [0018] The structure of the tube 7 will now be described, knowing that the other tubes 7 'and 7 "have the same structure As shown in Fig. 5, the tube 7 is elongate and has a circular cross-section. is slightly less than that L30 of the head, is included as an example between 20 and 2000 millimeters, its external diameter D7 is for example between 10 and 20 millimeters.The tube 7 is pierced by two parallel rows 71 and 72 orifices, made by any suitable method, these orifices extend along a length L71, which represents a substantial part of the total length of these tubes.
    [0019] In the example, there are two rows of orifices, which are mutually offset. This reduces the effects of injection turbulence, while improving the homogeneity of the final deposit. This avoids any inadvertent deposit of a parasitic film on the electrodes themselves, which would be likely to reduce the deposition rate on the substrate 35 and would be detrimental to the quality of this deposit. The two ends of each tube are mounted on flanges 76, located close to the front and rear walls, respectively. According to an advantageous embodiment, at least 3035122 one of these ends is fixed on a yoke 78, supported by a respective flange, which has the shape of a cylinder part (see Figure 7). Therefore, this tube can be rotated about its main longitudinal axis, as shown by the arrow R7, which makes it possible to vary the injection angle of the gaseous mixture towards the substrate. This ensures a reduction of the effects due to the injection turbulence, as will be explained in the following. In addition, each tube is advantageously fixed to the head removably, by snap-fastening or the like. Therefore, a given tube can be replaced by another similar tube, especially in case of failure. The expression "different tubes" means that at least one of the following parameters varies from one tube to another: - Total size of the tube - Size of the orifices 15 - Positioning of these orifices, in particular number of rows - Length L71 the perforated area. Advantageously, each electrode has a smooth outer surface, which avoids the creation of turbulence in the plasma formation zone. This electrode is preferably made of ceramic material, which makes it possible to treat an electrically conductive substrate. Alternatively, the electrodes may be made of any other suitable material, such as metallic material. The structure of the electrode 8 will now be described, since the electrodes 8 'and 8 "have the same structure With reference to Figures 4 and 8, the electrode 8 is elongated and has a square cross section. Its length L8 is substantially equal to that L7 of the tube 7, while its width 18 is similar to the diameter D7 of the tube 7, in particular between 10 and 20 millimeters.
    [0020] The two ends of each electrode are attached to the flanges 76 (FIG. 4) near the ends of the tubes. Unlike tubes, these electrodes are not mounted on these flanges with a possibility of rotation. The electrodes 8 are connected to a source of very high voltage, not shown.
    [0021] In addition, each electrode is advantageously fixed to the head removably by any appropriate means. Therefore, a given electrode can be replaced by another similar electrode, especially in case of failure. This electrode may also be replaced by another electrode of a different type. The term "different electrodes" means that at least one of the following parameters varies from tube to tube: - Total electrode size - electrode material 5 - electrode shape. As also shown in FIG. 4, the electrodes 8 are connected to a common source of nitrogen 90 via upstream lines 91. Nitrogen flows along these electrodes and then downstream lines 92 which open into each diffuser 42 .
    [0022] In addition, a sensor 94, of any suitable type, is adapted to measure the oxygen content in the vicinity of the electrodes. As shown in FIG. 3, the sensor is positioned near the inlet E. This sensor is connected to a controller 96, via a line 97, so as to control the nitrogen flow through an additional line 98 , which opens into the source 90. The smallest distance between the injection orifices 71, 72 and the substrate SUB is referenced d7, while d8 denotes the smallest distance between each electrode 8 and the substrate. The distance d8 is, for example, between 500 and 2500 micrometers, typically between 500 and 1500 micrometers, in particular equal to 1000 micrometers. Advantageously, the distance d7 is slightly greater than that d8. In this way the head can be positioned relative to the counter electrode 20, as explained above, without risk of contact between the tubes 7 and against this electrode.
    [0023] Each tube is disposed substantially equidistant from the two electrodes, between which it is located. For example, the smallest distance d78 between a tube and an electrode is between 5 and 10 millimeters. If the distance d78 is too low, an electric arc may occur. On the other hand, if d78 is too high, this can create a substantial dead volume, in which gaseous mixture can flow.
    [0024] Different possibilities of implementing the method according to the invention, by means of the above installation, will now be explained in what follows. In a prior phase, nitrogen is first admitted into the volume V via the diffusers 42. The substrate is not set in motion until the oxygen concentration measured by the sensor 94 falls below a given threshold, for example equal to 20 ppm (parts per million). When the value of this concentration is appropriate, then the substrate is displaced by the support, while the active gas mixture is injected through the tubes 7, and a discharge is generated by the electrodes 8. This active gaseous mixture comprises a reactive gas capable of being activated by the aforementioned electric discharge. This reactive gas may comprise: at least one dopant type compound capable of modifying the surface of the substrate for the purpose of a subsequent treatment, of grafting or molecular functionalization type. By way of example, this dopant may be: an oxidizing gas, such as O 2, O 2, N 2 O or air 10 - a reducing gas, such as H 2 - a hydrocarbon, such as C 2 H 2 - a fluorinated gas, such as CHF 3. at least one monomer-type compound capable of creating a deposition layer on the surface of the substrate, by polymerization with monomers present in the active gas mixture and / or on the surface of the substrate. This surface may have previously undergone molecular functionalization, as defined above, or may subsequently undergo such functionalization. By way of example, this monomer can be: an organosilicate, such as TEOS (tetraethyl orthosilicate), a non-cyclic organosiloxane, such as HM DSO (Hexamethyl Di Siloxane), a cyclic organosiloxane, such as OCTMS (octamethylcyclo), Tetra siloxane) - an organosilane, such as OTES (Tri Ethoxy-N-Octylsilane). The reactive gas may therefore consist of the monomer or the dopant or a mixture of monomer and dopant. In the case of a mixture, the ratio between the volume fractions of the dopant and the monomer is, for example, between 10 and 30. The gaseous mixture may consist of the reactive gas, ie it does not include any substantial fraction of another component. In particular, the gaseous mixture may consist of one or more dopants alone, especially in the case where the latter lend themselves to such a use without any particular danger, such as N 2 O or O 2. The gaseous mixture may comprise, in addition to the reactive gas, a carrier gas. The latter can be defined as a gas capable of transporting the reactive gas, without modifying the nature of the latter or the nature of the substrate. In this case, the ratio between the volume fractions of the carrier gas and the reactive gas is, for example, between 10 and 100.
    [0025] A carrier gas may be chosen, which is identical to the inert gas injected by the diffusers 42. In this case, it may be typically nitrogen. According to an advantageous variant, it is possible to choose a carrier gas which is different from the inert gas. In particular, it is possible to choose a carrier gas which has improved plasmagenic properties with respect to nitrogen, such as a noble gas such as helium. Indeed, since the amount of carrier gas used is much less than the amount of inert gas, this does not generate unacceptable additional costs.
    [0026] One of the applications targeted by the invention is plasma assisted deposition. In this case, a reactive mixture composed of at least one monomer, advantageously associated with at least one dopant and with a carrier gas, is used. Since the dopant is injected at the same time as the monomer, this increases the quality and the homogeneity of the deposit, in particular thanks to the fact that the ratio between their concentrations is homogeneous over the treated surface of the substrate. Another of the applications targeted by the invention is plasma-assisted grafting. In this case, a reactive mixture composed of at least one dopant, associated optionally with a carrier gas, is used. Since the dopant is injected as close as possible to the substrate, it has a very satisfactory homogeneity on the surface thereof. In addition, substantial loss of dopant is avoided since the risks of entrainment by the inert gas are reduced. Finally, in the case where the dopant is acetylene, the inadvertent formation of powder on the electrodes is greatly reduced.
    [0027] The inert gas, injected continuously by the diffusers 42, tends to press on the substrate the gaseous mixture, which is injected through the tubes 7, namely closer to the substrate. In order to guarantee a satisfactory plating effect, the internal volume V of the head 30 is maintained in slight overpressure with respect to the rest of the enclosure 10.
    [0028] As explained above, an appropriate value of this overpressure is ensured by modifying, where appropriate, the position of the head relative to the support, according to the arrows T30 and / or R30. This tends to modify the height of the outlet S and consequently its effective section, namely the section of this outlet through which the evacuated gas can flow out of the volume V. In addition or in substitution, it is also possible to act on the value of the overall gas flow, formed by the sum of the respective flow rates of the inert gas and the active gas mixture.
    [0029] Advantageously, the oxygen concentration is measured continuously by the sensor 94 is measured continuously during the plasma treatment. If this concentration exceeds the aforementioned threshold, the control device 90 increases the nitrogen flow, in order to reduce this oxygen concentration. It will further be appreciated that the flow of nitrogen through the electrodes via the lines 91 allows the heat to be removed from these electrodes. Figures 9 to 11 illustrate another advantageous embodiment of the invention. The mechanical elements of these FIGS. 9 to 11, which are similar to those of the embodiment of FIGS. 1 to 8, are assigned the same reference numbers increased by 100. The enclosure 110 is equipped with several pairs of rails 116 , 116 'and 116 ", which extend side by side in the direction of displacement of the substrate In other words, there are respectively upstream 116, intermediate 116' and downstream 116" rails. Access to these rails is authorized by windows and doors not shown, as described above. In addition, the installation comprises several heads 1301 to 130, which may be identical or different, according to the definition given above.
    [0030] According to a first possibility not shown, a single head can be positioned on a first pair of rails, in particular the intermediate pair 116 '. A first type of substrate treatment can be performed as described above. Figure 10 shows another possibility in which two heads, for example those 1301 and 1302, are placed on respective rails, for example those 116 and 116 '. If these heads are identical, a thicker deposit can be obtained without reducing the speed of the substrate. On the other hand, if these heads are different, namely that their tubes are fed with different gas mixtures, the final deposit may include two layers of different natures.
    [0031] According to an advantageous embodiment, it is possible to produce, in the first head 1301, a preliminary plasma treatment aimed at at least partially removing the boundary oxygen layer present on the substrate. For this purpose, the gaseous mixture injected into this first head is, for example, nitrogen, or a mixture of nitrogen and hydrogen. This ensures a significant reduction in the amount of gas consumed in the second head 1302, for the inerting of its interior volume. Therefore, the total amount of gas consumed to inert the two heads 1301 and 1302 is globally decreased.
    [0032] It will be appreciated that the threshold treatment described in the above paragraph may also be carried out in the case where a single head is provided, such as that of FIGS. 1 to 8. In this case nitrogen, or the mixture of nitrogen and hydrogen is injected into the upstream part of the head, for example into the tube 7. Another gaseous mixture is then injected into the downstream part of the head, for example into the tubes 7 Fig. 11 shows yet another possibility in which three heads, for example those 1301, 1302 and 1303, are placed on the three pairs of rails If these heads are identical, an even thicker deposit may be provided. If, however, two of these heads are identical but the third is different, the final deposit may include two layers of different natures, one of which is thicker than the other. if the three heads are different from each other other, the final deposit may include three layers of different natures. It is also possible to provide, in the upstream head 1301, a preliminary plasma treatment as described immediately above. Figure 12 illustrates an advantageous variant of the invention. The mechanical elements of this FIG. 12, which are similar to those of the first embodiment of FIGS. 1 to 8, are assigned the same reference numbers increased by 200. The enclosure 210 is substantially closed and has three openings, namely that defined by the exhaust pipe 217, and two slots. An upstream slot, or input slot E210 ensures the passage of the substrate arriving in the interior volume of the chamber while a downstream slot, or exit slot S210 ensures the passage of SUB substrate out of this interior volume. The installation shown in this figure 12 further comprises an additional chamber, or preliminary chamber 221, which is located opposite the inlet E210 and which receives two drive rollers 222 and 222 '. This preliminary chamber 221 has its own entrance slot E221, which allows the arrival of the substrate. The output of this chamber 221 coincides with the entrance E210 of the main enclosure. The preliminary chamber may be releasably connected to the main enclosure by any suitable means. In use, the substrate is compressed between the rollers 222 and 222 ', which substantially eliminates the air layer potentially present on the two opposite faces of the substrate.
    [0033] In the example illustrated, the installation comprises a single head 230. In a variant, several heads can be provided, as in the example of FIGS. 9 to 11. In this respect, the provision of a separate preliminary chamber 221 is provided. may avoid the use of the roller 22 of Figure 1. Therefore, a larger angular portion of the drum 220 is accessible, especially for its association with several heads. Advantageously, provision can be made for a suction device 224 placed in the vicinity of the inlet E221. In use, this device 224 can be advantageously activated, so as to place the internal volume of the chamber 221 in a slight depression with respect to the interior volume of the enclosure 210. By way of indication, the difference in pressures between the enclosure 210 and the chamber 221 is typically between 10 and 100 Pascal, in particular between 20 and 50 Pascal. This improves the elimination of the air layer between the rollers 222 and 222 '.
    [0034] As a variant not shown, it is possible to actuate the suction device 224 while injecting an inerting gas, such as nitrogen. In this way, the internal volume of the chamber 221 is not depressed. This avoids entering a significant amount of air into the chamber 221 via the entrance E221.
    [0035] As a further variant, also not shown, it is possible to realize in the chamber 221 a preliminary plasma treatment, such as that described with reference to FIG. 10. This makes it possible to eliminate all or part of the coating layer even more efficiently. limit oxygen present on the substrate.
    [0036] Examples The invention is illustrated below by examples which, however, do not limit its scope. These examples relate to two types of plasma treatments.
    [0037] EXAMPLE 1 An installation such as that described in FIGS. 1 to 9 is used. The enclosure has an overall volume of 1.15 m 3, and the head has a volume of 0.02 m 3. Three tubes with a diameter of 15 millimeters, three electrodes with a width of 35 millimeters, and eight identical diffusers are used. The respective distances are as follows: - d7 = 1.2 millimeter 3035122 19 -18 = 1.0 millimeter - d78 = 5.0 millimeters - D42 = 120 millimeters - HS = 0.8 millimeters.
    [0038] A PET film, whose width is 1,200 millimeters and whose thickness is 12 micrometers, is scanned at a speed of 10 meters per minute. TEOS (Tetraethyl OrthoSilicate) is used as a monomer - as a dopant, N 2 O 2 - as inert gas, nitrogen - as a carrier gas, nitrogen. The monomer is vaporized at a temperature in the region of 60 ° C. by means of a CEM (Controlled Evaporator Mixer) type cell in a DBD (Dielectric Barrier Discharge) type electric discharge. In a first embodiment, according to the invention, the reactive gas mixture, consisting of the monomer, the dopant and the carrier gas, is injected into the tubes 7 at flow rates of 30 grams / hour, respectively. minute and 9 liters / minute. Inerting nitrogen is also injected at a rate of 300 liters / minute, by the diffusers 42.
    [0039] This configuration has led to the formation of a deposit whose surface energy measured on the width has a satisfactory homogeneity. This deposit has a very high surface energy, measured at 105 mN / m according to ASTM D-2578. The formation of a small amount of light colored powder on the electrodes and walls of the tubes is noted. A comparison was then made with a second implementation, which is not in accordance with the invention. For this purpose, the dopant N20 was injected, not into the tubes 7 with the monomer and the carrier gas, but into the diffusers 42 mixed with the inert gas. All other operating parameters were otherwise unchanged. This configuration led to the formation of a deposit whose homogeneity is much lower. Indeed the value of the surface energy varies, according to the width of the width, between 48 and 58 mN / m. The formation of a significantly greater amount of powder is noted on the electrodes and the walls of the tubes. In addition, this powder is brown in color.
    [0040] An installation such as that described in FIGS. 1 to 9 is used. The enclosure has an overall volume of 1.15 m 3, and the head has a volume of 0.02 m 3. Three tubes 5 having a diameter of 15 millimeters, three electrodes whose width is 15 millimeters, and eight identical diffusers are used. The respective distances are as follows: - d7 = 1.2 millimeter -18 = 1.0 millimeter 10 - d78 = 5.0 millimeter - D42 = 120 millimeter - HS = 0.8 millimeter. A film of PET, whose width is 1,200 millimeters and whose thickness is 12 micrometers, is scrolled at a speed of 100 meters per minute.
    [0041] According to one embodiment of the invention, the reactive gas mixture comprises two dopants and two carrier gases. This global gas mixture is composed of two elemental mixtures, injected simultaneously. Note that this overall gas mixture is free of monomer.
    [0042] The first elemental mixture, injected into the three tubes, comprises 5% hydrogen as a dopant, as well as nitrogen as the carrier gas. The flow rate of this first elemental mixture is 2 liters / minute (overall flow rate for the 3 tubes).
    [0043] The second elemental mixture, injected into the three tubes, comprises 1% acetylene as a dopant, as well as nitrogen as a carrier gas. The flow rate of this second elemental mixture is 2 liters / minute (overall flow rate for the 3 tubes). The inerting nitrogen is further injected at a rate of 480 liters / minute.
    [0044] The zones respectively adjacent to the substrate and adjacent to the electrodes 8, 8 'and 8 "respectively are called upstream, intermediate and downstream discharge zones, 40% of the gaseous reactive mixture passes into the upstream discharge zone, 67% of this mixture. It passes into the intermediate discharge zone, and 86% of this mixture passes into the downstream discharge zone 35. Under these conditions, only a very small fraction of the active gas mixture is discharged outside the head, without having It has been noted that the process of the invention makes it possible to improve the inerting power of nitrogen and to increase the stability of the plasma.The active species (H2 and C2H2) remain confined in the discharge zones of the head, this configuration makes it possible to obtain on the film treated at 100 meters / minute a high surface energy homogeneous over its width measured at 60 mN / m according to the ASTM D-2578 standard.
    [0045] A second implementation, which is not in accordance with the invention, was then made by way of comparison. For this purpose, the overall reaction mixture was injected not into the tubes 7 but into the diffusers 42 mixed with the inert gas (nitrogen).
    [0046] This configuration has led to lower performance grafting efficiency. In fact, a high surface energy homogeneous over the width of the treated film, measured at 60 mN / m according to the ASTM D-2578 standard, could not be reached at a film speed of PET greater than 75 meters / minute. . 20
    权利要求:
    Claims (10)
    [0001]
    REVENDICATIONS1. A method of surface treatment of a substrate (SUS) in motion, in an installation comprising - an enclosure (10; 110; 210); a support (20; 120; 220) for the substrate received in said enclosure; a counter electrode (20; 120; 220); at least one head (30; 1301-130; 230) defining an interior volume (V) open towards the support, said head being provided with at least one electrode (8, 8 ', 8 ") adapted to cooperating with said counterelectrode to create an electric discharge; - diffusion means (42) for the diffusion of an inert gas towards said support; and - injection means (7, 7 ', 7 "), separate diffusion means for injecting at least one active gas mixture into said support, said active gas mixture comprising a reactive gas capable of being activated by said electric discharge; the injection means being placed between the diffusion means and the support; the head and the support defining at least one outlet (S) for the inert gas and / or the active gas mixture, in which process (i) both the inert gas and the active gas mixture are introduced to said support, in order to press the active gas mixture against said support; (ii) reactive gas is activated in said electric discharge and the surface of said moving substrate is treated; (iii) evacuating, through said outlet (S), the gaseous atmosphere of the inner volume (V), said gaseous atmosphere comprising a fraction of the inert gas and the active gas mixture; (iv) adjusting the effective cross-section of the outlet (S) and / or adjusting the total flow rate of the inert gas and the active gas mixture, so that the pressure difference between the interior volume (V) of each head and the interior volume of the enclosure is greater than 10 Pascal, knowing that the steps (i) to (iv) are not necessarily chronological. 30
    [0002]
    2. Method according to claim 1, wherein the effective section of the outlet is adjusted and / or the total flow rate of the inert gas and of the active gas mixture is adjusted, so that the pressure difference between the internal volume of each head and the interior volume of the enclosure is greater than 20 Pascal, in particular greater than 50 Pascal. 35
    [0003]
    3. A method according to claim 1 or 2, wherein the oxygen concentration is measured in the interior volume of each head and the outlet cross-section is adjusted and / or the total flow rate of the inert gas and the mixture is adjusted. active gas, if this measured concentration is outside a predetermined range.
    [0004]
    4. Method according to one of the preceding claims, wherein the active gaseous mixture comprises, besides the reactive gas, a carrier gas.
    [0005]
    5. Method according to claim 4, wherein using an inert gas of a first type, especially nitrogen, and a carrier gas of a different type, including helium. 10
    [0006]
    6. Method according to one of the preceding claims, wherein the reactive gas comprises at least one monomer and / or at least one dopant.
    [0007]
    7. Method according to one of the preceding claims, wherein a first active gaseous mixture comprising hydrogen as a reactive gas is injected into at least one upstream injection member in order to eliminate at least a part of the oxygen boundary layer present at the surface of the substrate, then a second active gaseous mixture different from the first active gaseous mixture is injected into at least one downstream injection member at the surface of the substrate released from at least one part of said oxygen layer. 20
    [0008]
    8. Method according to one of the preceding claims, wherein the substrate is passed through an auxiliary chamber (221) placed upstream of the enclosure, and this substrate is pressed by means of at least one roller (222, 222 ') received in this auxiliary chamber, to at least partially remove the air layer present on the surface of the substrate.
    [0009]
    9. Installation for carrying out a method according to any one of the preceding claims, comprising - an enclosure (10; 110; 210); a support (20; 120; 220) for the substrate (SUB) received in said enclosure; a counter electrode (20; 120; 220); at least one head (30; 1301-130n; 230), defining an internal volume (V) open towards the support, said head being provided with at least one electrode (8, 8 ', 8 ") adapted to cooperating with said counter electrode to create an electric discharge; - diffusion means (42) for diffusing an inert gas towards said support; and - injection means (7, 7 ', 7 ") for injecting at least one active gas mixture into said support, said active gas mixture comprising a reactive gas capable of being activated by said electric discharge; - the injection means being placed between the diffusion means and the support - the head and the support defining at least one outlet (S) for the inert gas and / or the active gas mixture, this installation further comprising means adjusting the effective section of the outlet and / or means for adjusting the total flow rate of the inert gas and the active gas mixture.
    [0010]
    10. Installation according to the preceding claim, characterized in that it further comprises an auxiliary chamber (221), placed upstream of the chamber, said auxiliary chamber being provided with at least one pressing roller (222, 222 '). ) adapted to at least partially remove the air layer present on the surface of the substrate.
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    FR2816726A1|2000-11-16|2002-05-17|Air Liquide|Surface treatment installation has regulator to adjust flow rate of gas drawn out of chamber, so as to maintain zero pressure difference between interior and exterior of chamber|
    US20030113479A1|2001-08-23|2003-06-19|Konica Corporation|Atmospheric pressure plasma treatmet apparatus and atmospheric pressure plasma treatment method|
    EP2762609A1|2013-01-31|2014-08-06|Applied Materials, Inc.|Common deposition platform, processing station and method of operation thereof|WO2018078237A1|2016-10-27|2018-05-03|Coating Plasma Industrie|Facility for treating the surface of a moving substrate in a controlled atmosphere, and method for defining the size thereof|
    FR3058161A1|2016-10-27|2018-05-04|Coating Plasma Industrie|SURFACE TREATMENT INSTALLATION OF A CONTROLLED ATMOSPHERE-MOVING SUBSTRATE, AND ITS SIZING METHOD|US4723507A|1986-01-16|1988-02-09|Energy Conversion Devices, Inc.|Isolation passageway including annular region|
    US6028014A|1997-11-10|2000-02-22|Lsi Logic Corporation|Plasma-enhanced oxide process optimization and material and apparatus therefor|
    CA2435852A1|2000-11-14|2002-05-23|Sekisui Chemical Co., Ltd.|A method for plasma treatment under the atmospheric pressure and an equipment therefor|
    JP2002246310A|2001-02-14|2002-08-30|Sony Corp|Method of forming thin semiconductor film, method of manufacturing semiconductor device, device used for executing the methods, and electro-optic device|
    JP2007208093A|2006-02-03|2007-08-16|Canon Inc|Method of forming deposition film and method of forming photovoltaic element|
    JP5291875B2|2006-11-01|2013-09-18|富士フイルム株式会社|Plasma device|
    JP5058909B2|2007-08-17|2012-10-24|株式会社半導体エネルギー研究所|Plasma CVD apparatus and thin film transistor manufacturing method|
    US8851012B2|2008-09-17|2014-10-07|Veeco Ald Inc.|Vapor deposition reactor using plasma and method for forming thin film using the same|
    US20110033638A1|2009-08-10|2011-02-10|Applied Materials, Inc.|Method and apparatus for deposition on large area substrates having reduced gas usage|
    KR20120090996A|2009-08-27|2012-08-17|어플라이드 머티어리얼스, 인코포레이티드|Method of decontamination of process chamber after in-situ chamber clean|
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    US20110143019A1|2009-12-14|2011-06-16|Amprius, Inc.|Apparatus for Deposition on Two Sides of the Web|
    KR101331420B1|2011-03-04|2013-11-21|가부시키가이샤 히다치 고쿠사이 덴키|Substrate processing apparatus and method of manufacturing semiconductor device|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1553503A|FR3035122B1|2015-04-20|2015-04-20|METHOD FOR SURFACE TREATMENT OF MOVING FILM AND INSTALLATION FOR IMPLEMENTING SAID METHOD|FR1553503A| FR3035122B1|2015-04-20|2015-04-20|METHOD FOR SURFACE TREATMENT OF MOVING FILM AND INSTALLATION FOR IMPLEMENTING SAID METHOD|
    US15/564,017| US20180144910A1|2015-04-20|2016-04-07|Method for treating the surface of a moving film, and facility for implementing said method|
    PCT/FR2016/050792| WO2016170242A1|2015-04-20|2016-04-07|Method for treating the surface of a moving film, and facility for implementing said method|
    EP16721872.6A| EP3380647B1|2015-04-20|2016-04-07|Method for treating the surface of a moving film, and facility for implementing said method|
    DK16721872T| DK3380647T3|2015-04-20|2016-04-07|Method of coating a moving film and plant for performing this method|
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