• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method of adjusting the properties of a photonic circuit to coincide with expected properties, the photonic circuit having a waveguide (10) that includes a light propagation region (20) , characterized in that it comprises a step of modifying the refractive index of at least one zone of said region, said step being implemented by means of an ion implantation in the at least one zone (21 ). It extends to a waveguide whose light propagation region has at least one region of refractive index modified by ion implantation in which the light remains confined, and to a photonic circuit incorporating such a guide.
    公开号:FR3034875A1
    申请号:FR1553024
    申请日:2015-04-08
    公开日:2016-10-14
    发明作者:Karim Hassan；Corrado Sciancalepore；Bakir Badhise Ben；Sylvie Menezo
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The field of the invention is that of photonics and optoelectronics on micro silicon. BACKGROUND OF THE INVENTION NaNO-structured. The invention relates generally to waveguides for photonic circuits and more particularly relates to a technique for overcoming the manufacturing uncertainties of such circuits. STATE OF THE PRIOR ART The different photonic components, active and passive, form a complete component library which makes it possible to perform all the functions necessary for the processing of information by light on a chip, from transmission to reception, through low-loss transmission, wavelength division multiplexing, and high-frequency signal manipulation. This library contains lasers, RF components (modulators, photodiodes), passive components (guides, (of) multiplexers, resonant filters, couplers) and (de) coupling networks. Nevertheless, these components suffer for the most part from a weakness originating from the central material and common to all these components, silicon, whose refractive index is naturally sensitive to temperature variations. This intrinsic sensitivity requires particular attention during design because it can cause phase errors in the circuits, synonymous with a drastic drop in performance, or even the malfunction of one or more parts of the circuit. This detrimental sensitivity at first sight can be skillfully controlled by heating elements or electrical contacts placed near the components. In particular, a fine and dynamic management makes it possible to make spatio-frequential adjustments essential to overcome manufacturing uncertainties and thus to recalibrate optical signals in international standards (telecom / datacom). These heaters / electrodes are positioned in 'Back-End Of Line' (BEOL), ie the end of 5 manufacturing processes, for the management of thermal problems and spatio-frequency adjustments between transmission and reception bricks, including carrier multiplexing. optics. This active thermal control is however carried out at the cost of a significant energy consumption and possibly additional optical losses. In order to overcome the drawbacks of such an energy-intensive control, it has been proposed in International Application WO 2013/119981 A1 to add an additional material to the interface between the waveguide and its encapsulation layer in order to to have a post-manufacturing adjustment parameter. A UV insolation of this new interface material indeed changes the refractive index inside the guide, thus making it possible to readjust the spectral properties of a photonic circuit integrating such a guide. Nevertheless, this solution complicates the fabrication of the photonic circuits since the integration of this interface material with the circuit must be carried out during the manufacture of the latter. DISCLOSURE OF THE INVENTION The object of the invention is to propose a technique allowing the spectral properties of photonic components on silicon to be readjusted, after fabrication and on an industrial scale, without adding material to the guide / encapsulation interface, but by simply implementing BEOL post-manufacturing steps that can be easily integrated into a production line. To this end, it proposes a method of adjusting the properties of a photonic circuit to recalibrate them with expected properties, the photonic circuit comprising a waveguide which comprises a light propagation region, characterized in that it comprises a step of modifying the refractive index of at least one zone of said region, said step being implemented by means of an ion implantation in the at least one zone. Some preferred but nonlimiting aspects of this method are the following: it comprises, before the step of modifying the refractive index of the at least one zone, a step of detecting the spectral properties of the photonic circuit and a step determining implantation conditions as a function of the difference between the detected spectral properties and expected spectral properties; It comprises, before the step of modifying the refractive index of the at least one zone, a step of removing an encapsulation of the at least one zone, and, after the step of modifying the refractive index of the at least one zone, a step of encapsulating the at least one zone; it comprises, following the encapsulation step of the at least one zone, the deposition 15 of a metal electrode on the encapsulation of the at least one zone. The invention also extends to a waveguide for a photonic circuit, comprising a light propagation region, characterized in that said region has at least one region of refractive index modified by ion implantation in which the light remains. confined.
    [0002] Some preferred but non-limiting aspects of this waveguide are as follows: the ionic species implanted in the at least one region are ionic Group IV species, such as germanium ions; the at least one zone extends in the direction of propagation of light over a length greater than half the wavelength of light; the light propagation region is of the edge or strip type and the at least one zone is an upper portion of the edge or the strip which extends over a predetermined distance in the direction of propagation of the light ; the at least one zone has, in the light propagation direction, an input transition section whose size increases progressively, a center section of constant size, and an output transition section whose size decreases. gradually ; it comprises an encapsulation layer, for example a negative thermo-optical coefficient material such as TiO 2, covering the region of light propagation except at the level of the at least one zone, encapsulation of the at least one zone being made of a material different from the material of the encapsulation layer, for example of SiO 2; it further comprises a metal electrode arranged on the encapsulation of the at least one zone; It comprises an encapsulation layer covering the whole of the light propagation region, for example a TiO 2 or SiO 2 layer. The invention also extends to a photonic circuit integrating such a waveguide. BRIEF DESCRIPTION OF THE DRAWINGS Other aspects, objects, advantages and features of the invention will become more apparent upon reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made with reference to the accompanying drawings in which: - Figure 1 is a diagram of a Mach-Zehnder interferometer comprising a waveguide according to the first aspect of the invention; FIGS. 2a and 2b are sectional views of the waveguides of each of the arms of the interferometer of FIG. 1, the waveguide of FIG. 2b being in accordance with the invention; FIG. 3 represents the effective index variation of the optical mode TE00 as a function of the implantation depth in the light propagation region of a waveguide according to the invention; FIG. 4 is a diagram of a planar selective network comprising a plurality of waveguides according to the invention; FIG. 5 represents different implantation geometries that can be used in the context of the invention; FIG. 6 represents the effective index variation of the optical mode TE00 as a function of the implantation depth for two implantation geometries; FIG. 7 illustrates various steps, carried out post-fabrication, of formation of a waveguide according to the invention; Figure 8 shows a waveguide according to a possible embodiment of the invention according to which it is provided with a metal electrode forming a heater.
    [0003] DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS The purpose of the invention is to overcome the drifts / uncertainties in the fabrication of a photonic circuit so that it has, or at least approximates, the expected spectral characteristics (for example because it these are standard features). It generally proposes to readjust in a controlled manner the spectral characteristics of a photonic circuit in post-fabrication by coming to carry out one or more ion implantations localized in areas of interest of the circuit.
    [0004] Such implantation results in an increase in the refractive index of the implanted material. This variation of refractive index can thus be controlled so as to achieve a phase adjustment in the photonic circuit. This adjustment is obtained passively by modifying the properties of the constituent materials of the circuit.
    [0005] The invention more specifically relates to a method of adjusting the properties of a photonic circuit to recalibrate them with expected properties. The photonic circuit includes a waveguide that includes a region, generally referred to as the heart, of propagation of light in which the light is strongly confined. The method comprises a step of modifying the refractive index by at least one zone of said region in which the light remains confined, said step being carried out by means of ion implantation in the at least one zoned. The ionic species implanted in the at least one zone of the light propagation region may be ionic group IV species, such as carbon, germanium, tin or lead ions, or ionic noble gas, such as neon, argon, krypton or xenon ions. This post-manufacturing adjustment method can be implemented on the entire photonic circuit, regardless of the shape of the component or type of guides that constitute it. The waveguide may thus be of the edge type 10 (rib), the strip type (strip) or the plate type (slab). The invention also extends to a waveguide for a photonic circuit, comprising a light propagation region, characterized in that said region has at least one region of refractive index modified by ion implantation in which the light remains. confined. The implanted zone thus allows the readjustment of the properties of the circuit. The invention thus also relates to the circuit with the properties thus adjusted. The post-fabrication adjustment process typically begins, before the step of modifying the refractive index of the at least one zone, by a step of detecting spectral properties of the photonic circuit and by a step of determining the photon circuit. implantation conditions as a function of the difference between the detected spectral properties and expected spectral properties. Detection of the spectral properties of the photonic circuit is effected for example by means of a fiber-to-fiber measurement of the transmission spectrum of the photonic circuit. And by implementation conditions, we mean a definition of "where And how to implement, namely mapping the implanted area (s) (location and geometry: length in the direction of propagation of light and width in the direction transverse to the direction of propagation of light), and a setting of the implantation parameters, namely dose and energy. As an illustrative example of the invention, there is shown in FIG. 1 a diagram of a Mach-Zehnder interferometer that can be used in cascade with other interferometers as (de) multiplexer and whose the properties have been adjusted post-manufacture by the implementation of the method according to the invention. In this FIG. 1, the arrow A represents the multiplexed optical flux supplied on the input port of the interferometer, and the arrows B and B 'represent the different wavelengths separated by the interferometer and available on these ports. Release. The interferometer has two arms out of phase with each other in the form of a first and a second waveguide G1, G2 of different lengths. FIGS. 2a and 2b respectively show sectional views, transverse to the propagation direction of the light, of the first and second waveguides G1, G2 at the zones of these guides identified by the references (1) and (2) in Fig. 2. The waveguide 1 of Fig. 2a is a conventional refractive index waveguide unmodified by post-fabrication operations. It comprises a region of propagation of silicon light (here of edge type) formed by etching of the surface layer of a silicon on insulator substrate. Region 2 thus rests on a buried oxide layer 3 interposed between region 2 and a silicon substrate 4. An encapsulation layer 5 covers region 2. Waveguide 10 of FIG. 2b is in accordance with FIG. the invention in that it has undergone a localized implantation of ions in its light propagation region 20 in order to modify its refractive index in a zone 21. This localized modification of the refractive index does not come altering the light-guiding function, the light actually remaining confined in the waveguide, including in the implanted zone, for the operating wavelengths of the photonic circuit.
    [0006] The light propagation region 20 also rests on a buried oxide layer 30 interposed between the region 20 and a silicon substrate 40, an encapsulation layer 50 coming to cover the region 20. As shown in FIG. 2b, the implanted zone 21 may be an upper portion of the region 20. The thickness of the implanted zone is then less than or equal to the total height of the region 20. Furthermore, as shown in FIG. 1, the implanted region extends a determined distance (length) d in the direction of propagation of the light. This distance is typically greater than half the wavelength of light, and less than a few tens of micrometers. When the waveguide is of the strip type, the width of the implanted zone 21 typically corresponds to the width of the band. When the waveguide is of the edge type, the width of the implanted zone may or may not coincide with the width of the edge. In particular, as will be described in more detail later, the width of the implanted area may be greater than the width of the edge, at least in part of the implanted area.
    [0007] FIG. 3 shows the variation of effective index neff of the optical mode TE00 as a function of the implantation depth P in an area of the region of propagation of light of a ridge waveguide in accordance with FIG. the invention. This variation was simulated with a pitch of 5 nm for a germanium ion implantation depth varying from 5 to 100 nm and a wavelength of light of 1.31 μm. The implanted dose is 1015 ions / cm 2. By way of example, an implantation energy of 30 keV leads to an implantation depth of 50 nm, whereas an implantation energy of 70 keV leads to an implantation depth of 100 nm. The waveguide has a height of 300 nm, an etching depth of 150 nm, and a width of 400 nm. It is encapsulated by a layer of SiO2.
    [0008] It can be seen from FIG. 3 that a very large variation in the effective index of 0.1 is obtained with a reasonable implantation depth of less than 100 nm and a low implanted dose typically of between 1014 and 1015 ions / cm 2. Such an effective index variation could be achieved by means of a temperature rise of several hundred degrees, which means that the area implanted to perform spatio-frequency readjustments is very short in comparison to the size of a equivalent heating element. By way of example, the length of the implanted zone necessary to generate a phase shift of n on the arm of a MachZehnder interferometer is established, for the wavelength of 1.31 .mu.m, at 6.55 .mu.m.
    [0009] The propagation losses associated with the defects created by this type of implantation are relatively low, so that for such lengths of implantation, they can practically be neglected. However, it is possible to further reduce the impact of these readjustments on propagation losses by micro-nano-structuring the ion implantations. Indeed, in addition to the losses associated with the defects created in the silicon, it is necessary to count on the modal losses associated with the localized variations of index. To do this, the at least one implanted zone may have, in the light propagation direction, an input transition section whose size increases progressively, a central section of constant size, and a transition section of exit whose size gradually decreases. In a preferred embodiment, the different sections can be made with the same implantation conditions (dose / energy) so that one encounters the same concentration profile of species implanted deep within the implanted zone. the entire length of the implanted area. The sections can then be formed during a single implantation, the difference in geometry being due to the shape of a mask at the location delimiting each of the sections. Alternatively, it is possible to perform multiple implantations by varying the implantation conditions, so as to affect the implantation depth and / or the concentration profile of species implanted within the implanted zone. FIG. 5 represents in this respect different implantation geometries obtainable by the implementation of the preferred embodiment mentioned above.
    [0010] In the scheme referenced (a), the implanted area 21 does not have transition sections: it has a single geometry along its length extending over the entire width of the edge or the strip in the case of a ridge or strip type guide, or a predetermined distance transversely to the direction of light propagation in the case of a plate type guide.
    [0011] In contrast, in the schemes referenced (b), (c) and (d), the implanted area has transition sections that can be developed from analytical or numerical models. In the diagrams referenced (b) and (c), the input transition section 22, 25 and the output transition section 24, 26 have a width, transverse to the direction of propagation of the light, which varies from in a linear manner, respectively so-called adiabatic way in that the index variation does not generate losses in the direction of propagation of light. The center section 23 extends the full width of the edge or web in the case of a ridge or strip type guide, or a predetermined distance transverse to the direction of propagation of the light. the case of a plate type guide. With a linear transition of 2 μm in input / output, a 99.2% transmission of the fundamental mode is observed through the implanted region, against 92% in the case without transition of the referenced scheme (a).
    [0012] In the referenced diagram (d), the input and output transition sections 27, 29 have a width which varies progressively in the direction of propagation towards, respectively, the central section 28 which, when the guide is of type in edge extends over a distance greater than the width of the edge. FIG. 6 shows the effective index variation of the optical mode TE00 as a function of the implantation depth for two implantation geometries, namely those corresponding to the diagrams referenced in (c) and (d) in FIG. 5. This figure illustrates the impact of the width of the implantation area on the effective index variation. It can be seen that an implantation according to the scheme referenced (d) in FIG. 5 makes it possible to reduce the implantation depth with a constant effective index variation (variation of 0.1 for 65 nm of implantation versus 85 nm in the case of a implantation according to the scheme referenced (c) in Figure 5). FIG. 7 shows various steps, carried out post-fabrication, of formation of a waveguide according to the invention allowing a readjustment of the properties of the photonic circuit integrating this waveguide.
    [0013] After its manufacture, and with reference to the diagram (a) of FIG. 7, the photonic circuit is encapsulated by an encapsulation layer 50 which is conventionally made of SiO 2. The invention is however limited to this material, but extends to the case of an encapsulation layer of a negative thermo-optical coefficient material which has the advantage of counterbalancing the thermo-optical sensitivity of silicon and therefore to make guides insensitive to changes in temperature. Such a layer is for example made of titanium dioxide (TiO 2). The formation of the waveguide according to the invention is carried out by removal of the encapsulation layer at the region of the light propagation region 10 whose refractive index is to be modified, implantation of said zone , and encapsulation of the implanted area. The removal of the encapsulation layer is typically accomplished by lithography and etching. When the encapsulation layer 50 is made of SiO 2, it can act as a hard mask. Referring to Figure 5 (b), a resin layer 60 is deposited on the encapsulation layer 50 and then lithographed to define the pattern of the region of the propagation region to be modified. refractive index. Referring to Scheme (c), the exposed region of hard mask 50 is etched to expose the area to be implanted. The resin layer is then removed. Then, with reference to Scheme (d), ion implantation is then performed to form zone 21 with a modified refractive index. And with reference to Scheme (e), zone 21 with a modified refractive index is encapsulated again by an SiO 2 layer. When the initial encapsulation layer is made of TiO 2, it will be noted that a step of deposition of a hard mask layer, typically made of SiO 2, on the encapsulation layer is necessary before proceeding with the deposition of the coating layer. resin. And the encapsulation step of the zone 21 with a modified refractive index may consist in encapsulating it with TiO2 or with another encapsulating material, for example SiO 2. Thus, in one possible embodiment, the guide includes an encapsulation layer covering the entire light propagation region, i.e. the material encapsulating the modified refractive index area. is identical to the material constituting the initial encapsulation of the waveguide. In another possible embodiment, the waveguide according to the invention comprises an encapsulation layer covering the light propagation region except at the level of the at least one zone, an encapsulation of the at least one an area being made of a material different from the material of the encapsulation layer. An illustrative example is that of a TiO2 encapsulation layer, and encapsulation of the modified Si02 refractive index region. This other possible embodiment can in particular be implemented when one or more locations of interest to readjust the properties of the circuit are predefined and incorporated into the circuit during its manufacture. With reference to FIGS. 1 and 4, the circuit may thus comprise one or more locations of interest Z1, Z2 where the encapsulation is made of a material different from the encapsulation of the remainder of the circuit. A location of interest may be associated with a single guide as is the case for the Mach-Zehnder interferometer shown in FIG. 1. It may also be associated with a plurality of waveguides as it is the case for the planar selective grating (AWG for Arrayed Wayeguide Gratin g) represented in FIG. 4. A location of interest includes one or more zones to be implanted and has a dimension greater than or equal to that of the zone or zones to be implanted. . This dimension can in particular correspond to that of a heating electrode. These locations Z1, Z2 can thus be encapsulated in Si02, where the rest of the circuit is protected against temperature changes by a Ti02 encapsulation layer. After possible implantation of a zone within one of these zones Z1, Z2, the implanted region is re-encapsulated in Si02 so as not to differ, except by the modification of the refractive index. of the implanted region, the circuit whose spectral characteristics have been measured. In such a case, the locations of interest used for spatio-frequency readjustments are significantly smaller than the total size of the circuit in order to insure its temperature insensitivity (indeed the sites of interest encapsulated in SiO 2 do not are not protected against temperature changes). As shown in FIG. 8, it is also possible to arrange a metal electrode 60 on the encapsulation 50 of Si02 of the implanted zone 21, which therefore remains sensitive to temperature changes. In such a case, one can proceed to a first readjustment of high amplitude by implantation, followed by a second extremely fine readjustment by the control of the heating electrode. Due to the first passive readjustment by implantation, the second active readjustment of the Joule effect phase errors has a reduced energy consumption compared to a situation where it would be used alone. This type of hybridization of readjustment techniques is advantageous in the case of very dense Wavelength Division Multiplexing (WDM) signals (DWDM) where the channels are very close together and therefore very sensitive to production uncertainties. Thus, manufacturing errors are roughly corrected by post-manufacturing implantation and finely by joule effect during use of the circuit. The invention thus makes it possible to reduce or even cancel the energy consumption previously required to carry out spatio-frequency readjustments. In one embodiment, it effectively proposes an athermic photonic circuit that does not require active controls to overcome manufacturing uncertainties and temperature variations, or at the very least only minimal controls. The approach of the invention is further versatile in that post-manufacturing readjustments by implantation remain compatible with the active control methods used today. The invention can also be implemented in post-manufacturing with CMOS compatible technologies. Finally, the stability of this post-manufacturing readjustment process is guaranteed for temperatures below the recrystallization temperature of silicon, which is the case since the implantation is carried out after manufacture. Beyond 550 ° C., the effect of germanium implantation is canceled. This effect can be exploited to come, by local heating, decrease or cancel the effect of implantation, for example if it has been overestimated. 5
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. A method of adjusting the properties of a photonic circuit to recalibrate them with expected properties, the photonic circuit comprising a waveguide (10) which comprises a region (20) for propagating light, characterized in that comprises a step of modifying the refractive index of at least one zone (21) of said region (20), said step being implemented by means of an ion implantation in the at least one zone (21) .
    [0002]
    2. Method according to claim 1, comprising, before the step of modifying the refractive index of the at least one zone, a step of detecting spectral properties of the photonic circuit and a step of determining implantation conditions. depending on the difference between the detected spectral properties and expected spectral properties.
    [0003]
    3. Method according to one of claims 1 and 2, comprising, before the step of modifying the refractive index of the at least one zone, a step of removing an encapsulation (50) of the least one zone, and, after the step of modifying the refractive index of the at least one zone, a step of encapsulating the at least one zone.
    [0004]
    4. Method according to claim 3, comprising, following the encapsulation step of the at least one zone, the deposition of a metal electrode on the encapsulation of the at least one zone.
    [0005]
    A waveguide (10) for a photonic circuit, comprising a region (20) for propagating light, characterized in that said region has at least one area (21) with refractive index modified by ion implantation in which the light remains confined. 3034875 16
    [0006]
    The waveguide (10) according to claim 5, wherein the ionic species implanted in the at least one region are ionic Group IV species, such as germanium ions. 5
    [0007]
    7. waveguide (10) according to one of claims 5 and 6, wherein the at least one zone extends in the direction of propagation of light over a length (d) greater than half of the wavelength of light.
    [0008]
    The waveguide (10) according to one of claims 5 to 7, wherein the light propagation region is of the edge or strip type and wherein the at least one zone (21) is an upper portion of the edge or the strip which extends over a determined distance in the direction of propagation of the light.
    [0009]
    The waveguide (10) according to one of claims 5 to 8, wherein the at least one zone has an input transition section (22, 25) in the light propagation direction. , 27) whose size increases progressively, a central section (23, 28) of constant size, and an output transition section (24, 26, 29) whose size gradually decreases. 20
    [0010]
    10. Waveguide (10) according to one of claims 5 to 9, comprising an encapsulation layer covering the light propagation region except at the level of the at least one zone, a encapsulation of the least one zone being made of a material different from the material of the encapsulation layer. 25
    [0011]
    The waveguide (10) of claim 10, wherein the encapsulation layer is of negative thermo-optical coefficient material.
    [0012]
    12. Waveguide (10) according to claim 10, wherein the encapsulation layer is TiO2 and the encapsulation of the at least one zone (21) is made of SiO 2. 3034875 17
    [0013]
    13. Waveguide (10) according to one of claims 11 and 12, further comprising a metal electrode arranged on the encapsulation of the at least one zone.
    [0014]
    14. Waveguide according to one of claims 5 to 9, comprising an encapsulation layer 5 covering the entire light propagation region, for example a layer of TiO2 or SiO2.
    [0015]
    15. Photonic circuit comprising a waveguide according to any one of claims 5 to 14. 10
    类似技术:
    公开号 | 公开日 | 专利标题
    EP3078996B1|2019-09-18|Method for adjusting the properties of a photonic circuit by ion implantation after manufacturing, waveguide and photonic circuit thus adjusted
    EP2411863B1|2014-06-25|Semiconductor-on-insulator broadband optical modulator
    EP0451047B1|1997-10-29|Environmentally protected integrated optical component and method of manufacturing the same
    JP6383590B2|2018-08-29|Optical receiver
    EP0851252A1|1998-07-01|Temperature independent optical multiplexer and/or demultiplexer
    EP0323317A1|1989-07-05|Method of manufacturing micro light guides having a low optical propagation loss by depositing multiple layers
    WO2011056817A2|2011-05-12|Optical device for wavelength locking
    FR2933502A1|2010-01-08|OPTICAL WAVEGUIDE STRUCTURE MICRONANOSTRUCTURE FOR THE CONTROL OF BIREFRINGENCE
    EP0968446B1|2001-12-12|Device for demultiplexing light paths contained in an optical spectrum
    EP0916977A1|1999-05-19|Square spectral response demultiplexer
    EP1326104A1|2003-07-09|Optical filter and method of filtering
    EP2410361B1|2015-07-08|Planar nanophotonic waveguide comprising a structure for optical coupling with an optical fibre
    EP2843451A1|2015-03-04|Method for producing a ridge-shaped PIN junction with spaced-apart doped regions, and its use in the production of photodetectors and electro-optic modulators
    EP2311160B1|2013-01-02|Device with laser source and waveguidefor collecting the light emitted by the laser source
    EP0986737B1|2003-09-24|Device for reading spectral rays contained in an optical spectrum
    EP2811593B1|2016-04-27|Tunable laser emitting device
    EP1377857A2|2004-01-07|Integrated high spectral resolution optical spectrometer and method for making same
    EP2746826B1|2020-03-25|Optical frequency filter and detector comprising such a filter
    EP3389097A1|2018-10-17|Photodiode
    EP0707224A1|1996-04-17|Wavelength selective optical coupler
    EP1621906B1|2011-10-26|Device including a flush-mounted optoelectronic element covered by a waveguide
    KR101759727B1|2017-07-20|Apodized Gratings for Polymeric Waveguide Tunable Wavelength Filters in the manufacturing method
    FR2794858A1|2000-12-15|Optical spectrum analyzer, has input coupler connected to incoming wave guide or optical fibre, wave guides of incrementally increasing length, image production optics and means of photo detection
    WO2021130149A1|2021-07-01|Optoelectronic transmitter with phased array antenna comprising an integrated control device
    EP0198735A1|1986-10-22|Opto-electronic transducer and process for its manufacture
    同族专利:
    公开号 | 公开日
    FR3034875B1|2018-03-02|
    US9766400B2|2017-09-19|
    US20160299292A1|2016-10-13|
    EP3078996A1|2016-10-12|
    EP3078996B1|2019-09-18|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    EP0285499A1|1987-03-25|1988-10-05|ETAT FRANCAIS représenté par le Ministre Délégué des Postes et Télécommunications|Method for increasing locally the refractive indices of an electro-optic material for use in optical guide and material obtained by this method|
    EP1074865A2|1999-08-06|2001-02-07|Waseda University|Waveguide grating and method and apparatus for forming same|
    US20020150337A1|2001-04-11|2002-10-17|Makoto Fujimaki|Optical waveguide grating and method and mask for forming same|
    US20030118271A1|2001-12-03|2003-06-26|Makoto Fujimaki|Optical waveguide coupler and its characteristic adjusting method|
    US5708739A|1996-09-09|1998-01-13|The United States Of America As Represented By The Secretary Of The Navy|Method and apparatus for photobleaching patterns in irradiated optical waveguides|
    US6221565B1|1998-02-09|2001-04-24|University Of New Mexico|Tunable bragg gratings and devices employing the same|
    JP2000180640A|1998-12-16|2000-06-30|Mitsubishi Cable Ind Ltd|Gain equalizer, light amplifier and optical fiber communication system|
    US6393185B1|1999-11-03|2002-05-21|Sparkolor Corporation|Differential waveguide pair|
    FR2933502B1|2008-07-02|2011-04-22|Commissariat Energie Atomique|OPTICAL WAVEGUIDE STRUCTURE MICRONANOSTRUCTURE FOR BIRTEFRINGENCE CONTROL|
    FR2933503B1|2008-07-02|2010-09-10|Commissariat Energie Atomique|COMPENSATED BIREFRINGENCE COUPLING DEVICE.|
    WO2013119981A1|2012-02-10|2013-08-15|Massachusetts Institute Of Technology|Athermal photonic waveguide with refractive index tuning|FR3056306B1|2016-09-20|2019-11-22|Commissariat A L'energie Atomique Et Aux Energies Alternatives|OPTICAL GUIDE HAVING A PSEUDO-GRADIENT INDEX RISE|
    US10386660B2|2017-03-31|2019-08-20|Huawei Technologies Co., Ltd.|Optical phase shifter, optical interferometer based thereupon, and method of manufacture thereof|
    FR3066617A1|2017-05-17|2018-11-23|Commissariat A L'energie Atomique Et Aux Energies Alternatives|PHOTONIC CHIP WITH REFLECTING STRUCTURE FOR OPTICAL PATH FOLDING|
    FR3066616B1|2017-05-18|2019-06-14|Commissariat A L'energie Atomique Et Aux Energies Alternatives|GUIDED LIGHT SOURCE, MANUFACTURING METHOD AND USE THEREOF FOR SINGLE PHOTON TRANSMISSION|
    FR3074587B1|2017-12-06|2020-01-03|Commissariat A L'energie Atomique Et Aux Energies Alternatives|PHOTONIC CHIP WITH OPTICAL PATH FOLDING AND INTEGRATED COLLIMATION STRUCTURE|
    法律状态:
    2016-04-28| PLFP| Fee payment|Year of fee payment: 2 |
    2016-10-14| PLSC| Publication of the preliminary search report|Effective date: 20161014 |
    2017-04-28| PLFP| Fee payment|Year of fee payment: 3 |
    2018-04-26| PLFP| Fee payment|Year of fee payment: 4 |
    2019-04-29| PLFP| Fee payment|Year of fee payment: 5 |
    2020-04-30| PLFP| Fee payment|Year of fee payment: 6 |
    2022-01-07| ST| Notification of lapse|Effective date: 20211205 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1553024|2015-04-08|
    FR1553024A|FR3034875B1|2015-04-08|2015-04-08|METHOD OF ADJUSTING THE PROPERTIES OF A PHOTONIC CIRCUIT BY POST-MANUFACTURING ION IMPLANTATION, WAVEGUIDE AND PHOTONIC CIRCUIT THUS ADJUSTED|FR1553024A| FR3034875B1|2015-04-08|2015-04-08|METHOD OF ADJUSTING THE PROPERTIES OF A PHOTONIC CIRCUIT BY POST-MANUFACTURING ION IMPLANTATION, WAVEGUIDE AND PHOTONIC CIRCUIT THUS ADJUSTED|
    US15/090,977| US9766400B2|2015-04-08|2016-04-05|Method for adjusting properties of a photonic circuit by post fabrication ion implantation, and adjusted waveguide and photonic circuit|
    EP16164200.4A| EP3078996B1|2015-04-08|2016-04-07|Method for adjusting the properties of a photonic circuit by ion implantation after manufacturing, waveguide and photonic circuit thus adjusted|
    [返回顶部]