• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
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    • 专利摘要:
    A single-electron transistor (100) having at least: - first semiconductor portions (106, 108) forming source and drain regions, - a second semiconductor portion (110) forming at least one quantum island third semiconductor portions (112, 114) forming tunnel junctions between the second semiconductor portion and the first semiconductor portions; a gate (120) and a gate dielectric (118) disposed; at least on the second semiconductor portion, wherein a thickness of each of the first semiconductor portions is greater than that of the second semiconductor portion, and wherein a thickness of the second semiconductor portion is greater than that of each of the third semiconductor portions.
    公开号:FR3033665A1
    申请号:FR1552005
    申请日:2015-03-11
    公开日:2016-09-16
    发明作者:Sylvain Barraud；Ivan Duchemin；Louis Hutin；Yann-Michel Niquet；Maud Vinet
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD AND PRIOR ART The invention relates to a single electron transistor, also called SET ("Single-Electron Transistor") or single-hole transistor (SHT) ("Single-Hole Transistor"). "), Used for so-called mono-electronic applications (electronic electron or a hole), as well as a method for producing such a transistor. The invention can be applied in particular to the field of quantum electronics, spintronics, or the field of quantum computing when the SET transistor is used as a quantum bit (Obit). The electron electronics uses devices in which the current flow is explained by the quantification of the load. The principle of these devices, called Coulomb blocking, is to associate the tunnel effect and the Coulomb interaction. The simplest single-electron device, called the quantum dot, has two electron / hole reservoirs between which there is a metal or semiconductor island, called a quantum island, isolated from the electron / hole reservoirs. The Coulomb interaction between the loads distributed on the island and in the reservoirs results in a capacitive coupling. A current can be established between the tanks passing through the island if the probability of passage of an electron from a reservoir to the island by tunnel effect is non-zero and if two states of the island with N and N + 1 electrons are energetically accessible. The load carried by the island can therefore only vary in multiples of the elementary charge ± e. Such a quantum dot, which forms an artificial atom, is particularly used in the field of quantum computing to form quantum bits, or qbit, spintronics, and quantum electronics to form SET transistors. A SET transistor consists of a quantum island, forming the channel region of the transistor, isolated from the source and the drain (which form the electron / hole reservoirs) by two tunnel barriers, or tunnel junctions. The quantum island is capacitively coupled with a gate electrode for controlling current flow through the quantum island, such as for a MOSFET transistor. This capacitance is a true electrostatic capacitance and not a tunnel junction, the gate oxide being thick enough to prevent the current from tunneling from gate 5 to the quantum island. The difficulty in making such a SET transistor lies in the fabrication of the quantum island (control of its position and its geometry) and the creation of the tunnel barriers. The quantum island and the tunnel junctions of a SET transistor can be realized by an oxidation of a semiconductor portion, for example a silicon nanowire, forming the channel connecting the source to the drain. Zhuang et al., "Silicon single-electron quantum-dot transistor operating at room temperature switch", APL, 72 (10), pp. 1205-1207, 1998, describes the production of quantum islands based on the use of variations present in the channel width obtained by electron or optical beam lithography. These variations can for example be generated by the roughness of the resin used during the lithography. During oxidation, these variations are amplified. If the oxidation continues long enough, a series of quantum islands separated by constrictions appear. Only the smallest of quantum islands formed seems to control the behavior of the device.
    [0002] The main advantage of such an oxidation is its simplicity of implementation. In addition, this oxidation makes it possible to obtain a reduction in the dimensions of the quantum island, thus decreasing its total capacity, and increasing the operating temperature of the transistor (for example at 300 K). The implementation of such an oxidation makes it possible to obtain islands with a very small capacity.
    [0003] However, the production of quantum islands by oxidation offers no real control over the number of quantum islands created, their position, and their dimensions. This production technique is therefore unsuitable for implementation on an industrial scale. ONO et al., "Manufacturing method for IC-oriented Si single-electron transistors", IEEE TED, pp. 147-153, 2000, discloses another technique of making SET transistors, called the PADOX method ("PAttern-Dependent OXidation") for the formation of quantum islands. This method is based on the fact that oxidation is preferentially formed at the junctions between different structures. It is thus possible to exercise some control over the location of these junctions, and thus on the characteristics of the islands formed. As before, this approach implements a thermal oxidation. In this method, a first portion of silicon whose thickness can typically be a few tens of nanometers is etched. Then, by lithography / etching, the central portion of the portion is thinned, thereby creating junctions at the differences in thicknesses between the central portion and the adjacent portions of the semiconductor portion. An oxidation step is then implemented to reduce the size of the central portion and reveal a silicon quantum island and two tunnel barriers at both ends of this island. While this method provides better control of the position of the quantum island, it remains based on oxidation which is relatively long to obtain small quantum islands. Moreover, whatever the method used for their realization, the SET transistors of the prior art allow to have a Coulomb blocking on few levels, which results in a characteristic ID (Vg) (drain current in gate voltage function) having few or no variations, i.e., corresponding to a monotonic function or having few variations, for example one or two changes in the direction of variation. But this can cause difficulties on the operation of the transistor, especially at room temperature. SUMMARY OF THE INVENTION An object of the present invention is to provide a single electron transistor, or SET transistor, the structure of which is compatible for an embodiment via the implementation of technological steps of the CMOS technology and not involving not necessarily the implementation of an oxidation step to form a quantum island, and having a better operation especially at room temperature.
    [0004] For this, the present invention proposes a single-electron transistor comprising at least: first semiconductor portions forming source and drain regions, and a second semiconductor portion forming at least one quantum island. third semiconductor portions forming tunnel junctions between the second semiconductor portion and the first semiconductor portions; a gate and a gate dielectric arranged at least on the second semiconductor portion; wherein a thickness of each of the first semiconductor portions is greater than that of the second semiconductor portion, and wherein a thickness of the second semiconductor portion is greater than that of each of the third semi-conductor portions; -driver. Unlike SET transistors of the prior art, the SET transistor according to the invention has a structure that can be realized according to an integration scheme similar to those used for CMOS microelectronics technologies that have a high level of maturity. The SET transistor according to the present invention can thus be easily integrated with MOSFET transistors for example for hybrid SET-FET applications (multi-valued logic for example). Unlike the SET transistors of the prior art, the transistor according to the invention does not necessarily imply the implementation of an oxidation step to form the quantum island and the tunnel junctions, and the position and the geometry of the The quantum island can be perfectly controlled since such a transistor can be made only from deposition, photolithography and etching steps. Such a SET transistor is perfectly compatible with the laws of miniaturization of the CMOS (Moore's Law) technology aimed at reducing both the thicknesses of the used semiconductor films and the gate length, the structure of such a transistor. can be very compact and allow for example to achieve the quantum island with a thickness of a few nanometers and a gate length of a few nanometers. The SET transistor according to the invention can be considered as a basic brick of quantum electronics.
    [0005] In the SET transistor according to the invention, since the thicknesses of the third portions which form the tunnel junctions are smaller than that of the second portion which forms the quantum island, the heights of the barriers formed by these third portions of semiconductor Conductors on either side of the quantum island, which form a quantum well, are thus increased relative to SET transistors of the prior art 10 whose islands are formed by oxidation. This has the effect of increasing the charge energy in the quantum island of the SET transistor and increasing the number of possible energy levels in the quantum island. This also results in a characteristic ID (Vg) of the transistor having a greater number of changes of direction of variation. This has the consequence of improving the operation of the SET transistor at room temperature while perfectly controlling the location of the quantum island. The thicknesses of the various elements of the transistor, and in particular of the different semiconductor portions of the transistor, correspond to the dimensions of these elements which are substantially perpendicular to a main plane of a substrate on which the transistor is made. The thicknesses of the different semiconductor portions of the transistor also correspond to the dimensions of these portions which are substantially perpendicular to a plane which includes the first, second and third semiconductor portions. The first, second and third semiconductor portions may be aligned with each other, and juxtaposed such that the second semiconductor portion is disposed between the third semiconductor portions and such that each of the third portions semiconductor is disposed between the second semiconductor portion and one of the first semiconductor portions. The transistor may further include dielectric spacers 30 disposed on the third semiconductor portions and against sidewalls of the gate, the gate dielectric and a portion of the second semiconductor portion. The thickness of the second semiconductor portion may be between about 2 nm and 15 nm, and advantageously between about 2 nm and 5 nm for optimal operation, and / or the thickness of each of the third portions of semi -conductor can be between about 1 nm and 5 nm, and preferably between about 1 nm and 2 nm for optimal operation, and / or a length of the third semiconductor portions, which corresponds to a distance between the second portion of semiconductor and one of the first semiconductor portions, may be between about 10 nm and 40 nm, and / or a length of the second semiconductor portion, which corresponds to a distance between the third portions. semiconductor, is less than or equal to about 10 nm. With such a length and such a thickness of the third semiconductor portions, the quantum island formed by the second semiconductor portion is well isolated from the source and drain of the transistor 15 formed by the first semiconductor portions, which makes it possible to avoid disturbances caused by the electron reservoirs formed by the source and the drain on electrons present in the quantum island. In addition, such a length and such a thickness of the second semiconductor portion give the transistor good operating efficiency.
    [0006] A difference between the thickness of the second semiconductor portion and the thickness of each of the third semiconductor portions may be between about 1 nm and 10 nm. A width of each of the second and third semiconductor portions may be less than or equal to about 10 nm. The width of the second and third semiconductor portions corresponds to the size of these portions which is perpendicular to the length and thickness of these portions. The semiconductor of the third semiconductor portions may be amorphous. This reinforces the isolation between the quantum island formed by the second semiconductor portion and the source and drain regions formed by the first 30 semiconductor portions.
    [0007] The grid and the gate dielectric may cover lateral flanks, in particular two lateral flanks, of the second semi-conductor portion. In this case, the transistor comprises a structure of the "Tri-Gate" or "Omega-Gate" type in which the gate and the gate dielectric cover three sides, or three faces, of the second semiconductor portion. which facilitates the electrostatic coupling of the gate with the quantum island formed by the second semiconductor portion. The first, second and third semiconductor portions may be disposed on a buried dielectric layer of a semiconductor-on-insulator substrate.
    [0008] The invention also relates to a method for producing a single-electron transistor, comprising at least the following steps: - producing first semiconductor portions forming source and drain regions, - producing a second portion semiconductor device forming at least one quantum island, - producing third semiconductor portions forming tunnel junctions between the second semiconductor portion and the first semiconductor portions, - producing a gate and a gate dielectric disposed at least on the second semiconductor portion, wherein a thickness of each of the first semiconductor portions is greater than that of the second semiconductor portion, and wherein a thickness of the second semiconductor portion semiconductor portion is greater than that of each of the third semiconductor portions.
    [0009] Such a method can be implemented without having a semiconductor oxidation step to form the quantum island and tunnel junctions of the transistor. The various semiconductor portions can in particular be made by deposition, photolithography and etching steps. The method may further comprise a step of producing dielectric spacers disposed on the third semiconductor portions and against the lateral flanks of the gate, the gate dielectric and a portion of the second semi-conductor portion. -driver. In a first embodiment, the method may further comprise a first step of producing a semiconductor element of thickness equal to that of the second semiconductor portion, comprising first and third parts from which the first and third semiconductor portions are intended to be made, and of which a second part forms the second semiconductor portion, and wherein: the gate and the gate dielectric can be made at least on the second portion of the semiconductor portion; semiconductor, then - the first and third parts of the semiconductor element may be partially etched such that their thicknesses are equal to those of the third semiconductor portions, the third etched portions of the semiconductor element forming the third semiconductor elements semiconductor portions, and then the dielectric spacers can be made on the third semiconductor portions, then - the first semiconductor portions are made from the first portions of the semiconductor element. In a second embodiment, the method may further comprise a first step of producing a semiconductor element of thickness equal to that of the second semiconductor portion, comprising first and third parts from which the first and third semiconductor portions are intended to be made, and a second part of which forms the second semiconductor portion, and wherein: - the gate and the gate dielectric can be made at least on the second portion of the semiconductor semiconductor, then - temporary spacers can be made on the third parts of the semiconductor element, then - the first semiconductor portions can be made from the first parts of the semiconductor element, then 3033665 9 - the temporary spacers can be removed, then - the third parts of the semiconductor element can be removed t be partially etched such that their thicknesses are equal to those of the third semiconductor portions, the third etched portions of the semiconductor element forming the third semiconductor portions, then - the dielectric spacers can be made on the third portions of semiconductor. The method according to this second embodiment has the advantage, compared to the first embodiment, of not etching the first 10 parts of the semiconductor element during etching forming the third portions of semiconductor which represents a constraint because the remaining thickness of the first parts of the semiconductor element must be sufficient to then achieve, for example by epitaxy, the first semiconductor portions. Such a method therefore makes it possible to achieve thinner tunnel junctions, for example with a thickness of between approximately 1 nm and 5 nm, conferring better isolation of the quantum island with respect to the source and drain of the transistor. In the method according to this second embodiment, the first semiconductor portions are made before the third semiconductor portions. In a third embodiment, the method may further comprise a first step of producing a semiconductor element of greater thickness than that of the second semiconductor portion, comprising first, second and third portions of the semiconductor element. from which the first, second and third semiconductor portions are intended to be made, and wherein: - a temporary gate can be made at least on the second part of the semiconductor element, then - temporary spacers can be made on the third parts of the semiconductor element, then - the first semiconductor portions can be made from the first portions of the semiconductor element, and then the temporary grid can be removed, then the second part of the semiconductor element can be partially etched so that its thickness is equal to it of the second semiconductor portion, the second etched portion of the semiconductor element forming the second semiconductor portion, then the gate and the gate dielectric can be made at least on the second portion of the semiconductor element. semiconductor, then - the temporary spacers can be removed, then - the third parts of the semiconductor element can be partially etched such that their thicknesses are equal to those of the third semi-conductor portions, the third parts etched of the semiconductor element forming the third semiconductor portions, then - the dielectric spacers can be made on the third semiconductor portions. As for the second embodiment, the method according to this third embodiment has the particular advantage, compared to the first embodiment, of not etching the first parts of the semiconductor element during the etching forming the third portions of semiconductor. Such a method therefore makes it possible to achieve thinner tunnel junctions, for example with a thickness of between approximately 1 nm and 3 nm, conferring better isolation of the quantum island with respect to the source and drain of the transistor. In addition, the method according to this third embodiment also has the advantage of defining the thickness of the second semiconductor portion during a specific step, for example by a thinning, not affecting the first and third portions of semi. -conducteur, which allows to control the thickness of the quantum island realized.
    [0010] In a variant of this third embodiment, the steps of removing the temporary gate, etching the second part of the semiconductor element and producing the gate and the gate dielectric can be implemented after the step of producing dielectric spacers. For the second or the third embodiment (or variant of the third embodiment), the method may further comprise a step of amorphisation of the third parts of the semiconductor element implemented between the step of removing the temporary spacers and the step of partially etching the third parts of the semiconductor element or between the step of partially etching the third parts of the semiconductor element and the step of producing the spacers 5 dielectrics. In a fourth embodiment, the method may further comprise a first step of producing a semiconductor element of greater thickness than that of the second semiconductor portion, comprising first, second and third parts from of which the first, second and third semiconductor portions are intended to be made, and wherein: - a temporary gate can be made at least on the second part of the semiconductor element, then - the first and third parts of the semiconductor element may be partially etched such that their thicknesses are equal to those of the third semiconductor portions, the third etched portions of the semiconductor element forming the third semiconductor portions, and then the dielectric spacers can be made on the third portions of semiconductor, and then first semiconductor portions may be made from the first portions of the semiconductor element, then - the temporary gate may be removed, and then the second part of the semiconductor element may be partially etched such that its thickness is equal to that of the second semiconductor portion, the second etched portion of the semiconductor element forming the second semiconductor portion, and then - the gate and the gate dielectric can be realized at least on the second semiconductor portion. The method according to this fourth embodiment has the advantage of defining the thickness of the second semiconductor portion during a specific step, for example a thinning, not affecting the first and third 3033665 12 portions of semi -conducteur, which allows to control the thickness of the quantum island realized. The first semiconductor portions can be made by epitaxy.
    [0011] The semiconductor element can be made by etching a semiconductor surface layer of a semiconductor-on-insulator substrate. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIG. 1 schematically represents a sectional view of profile of a single electron transistor, object of the present invention, according to a particular embodiment; FIG. 2 diagrammatically represents a profile sectional view of a plurality of single electron transistors, objects of the present invention, made on the same substrate and connected in series with each other; FIGS. 3A to 3F show schematically the steps of a method for producing a single electron transistor, object of the present invention, according to a first embodiment; FIGS. 4A to 4G show schematically the steps of a method for producing a single-electron transistor, object of the present invention, according to a second embodiment; FIGS. 5A to 5E show schematically the steps of a method for producing a single electron transistor, object of the present invention, according to a third embodiment. Identical, similar or equivalent parts of the different figures described below bear the same numerical references so as to facilitate the passage from one figure to another.
    [0012] The different parts shown in the figures are not necessarily in a uniform scale, to make the figures more readable. The different possibilities (variants and embodiments) must be understood as not being exclusive of each other and can be combined with each other. DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS Referring firstly to FIG. 1, which represents a profile sectional view of a single electron transistor 100, or SET, according to a particular embodiment.
    [0013] The transistor 100 is made from a semiconductor-on-insulator type substrate, for example of the SOI type, and comprising a solid semiconductor layer 102, for example made of silicon and forming the mechanical support of the transistor 100, on which is disposed a buried dielectric layer 104, also called BOX for "Buried OXide", comprising for example silicon oxide. The substrate initially comprises a semiconductor surface layer disposed on the buried dielectric layer 104 and from which an active region of the transistor 100 is formed. The active region of the transistor 100 comprises: - first semiconductor portions 106 and 108 respectively forming the source and the drain of the transistor 100; a second semiconductor portion 110 corresponding to a quantum island of the transistor 100; third semiconductor portions 112 and 114 each forming a tunnel junction between the second semiconductor portion 110 and one of the first semiconductor portions 106 and 108. The semiconductor portions 106 to 114 for example comprise silicon and / or germanium and / or SiGe and / or InGaAs and / or InP and / or any other III-V material.
    [0014] The transistor 100 also comprises a gate dielectric 118 disposed in particular on the second semiconductor portion 110. The gate dielectric 118 comprises, for example, SiO 2 or a high-permittivity dielectric ("HighK") such as HfO 2, ZrO 2, TiO 2, Al 2 O 3, etc. A gate 120, for example metallic, is arranged on the gate dielectric 118. In the example of FIG. 1, the gate 120 and the first semiconductor portions 106, 108 are covered by silicide portions 122 forming the electrical contacts of the transistor 100. The transistor 100 further comprises dielectric spacers 124 comprising, for example, nitride or silicon oxide, or SiBCN, and which are arranged on the third semiconductor portions 112, 114 These dielectric spacers 124 cover the lateral flanks of the gate 120 and the gate dielectric 118 as well as those of a portion of the second semiconductor portion 110. Although this is not visible in FIG. of grid 118 and gate 120 extend along the Y axis such that the lateral flanks of the second semiconductor portion 110 which are perpendicular to this axis are covered by the dielectric gate 118 and gate 120 forming a structure of the type "Tri-Gate" or "Omega-Gate". The second semi-conductor portion 110 has a length LD (dimension along the axis X) equal to the length of the gate 120 and which is for example between about 3 nm and 15 nm, and for example equal to about 7 nm. The shorter this length, for example less than or equal to about 10 nm, the higher the charge energy of the quantum island formed by the second semiconductor portion 110. The second semiconductor portion 110 also has a thickness TD (dimension along the Z axis) which is for example between about 2 nm and 15 nm, and for example equal to about 6 nm. This thickness TD may be equal to or less than the initial thickness of the surface semiconductor layer of the substrate from which the active region of the transistor 100 is made. Each of the third semiconductor portions 112, 114 has a length Ts equal to the width of each dielectric spacer 124 and which is for example between about 10 nm and 40 nm, and for example equal to about 15 nm, and a thickness Tc for example between about 1 nm and 5 nm, and for example equal to 2 nm. These third semiconductor portions 112, 114 thus form tunnel junctions enabling the quantum island formed by the second semiconductor portion to be well isolated from the sources 106 and drain 108 of the transistor 100, thereby allowing to avoid disturbances generated by the electron reservoirs formed by the sources 106 and drain 108 on electrons present in the quantum island 110. The first semiconductor portions 106 and 108 comprise a thickness TE that is for example between about 10 nm and 40 nm, and for example equal to about 25 nm. Such a thickness TE makes it possible to reduce the access resistances to the source and drain regions of the transistor 100 which are, for example, between about 200 n.u.m and 300 n.u.m. The width (dimension along the Y axis) of the second semiconductor portion 110 is here equal to that of the third semiconductor portions 112, 114, and is advantageously less than or equal to about 10 nm. The buried dielectric layer 104 comprises, for example, a thickness Timm of between approximately 10 nm and 400 nm, and for example equal to approximately 145 nm. This thickness Timm could be reduced, for example between about 10 nm and 20 nm, and for example equal to about 15 nm, especially when the transistor 100 comprises a rear gate formed in the solid layer 102 and making it possible to carry out a polarization. rear face of the transistor for modulating the charge in the quantum island 110 of the transistor 100. The gate dielectric 118 comprises for example a thickness ToX_GRILLE between about 1 nm and 10 nm.
    [0015] The different elements of the transistor 100 are dimensioned to obtain in particular a charge energy of the quantum island 100 which is about 100 meV greater than the thermal activation energy kT of the electrons in the quantum island 110, which is for example equal to about 25 meV, and thus avoid unwanted changes in electron energy levels in the quantum island 110 that may occur when the charge energy remains close to 25 meV.
    [0016] Simulations for calculating the charge energy in the quantum island 110 of the transistor 100 are carried out below to determine the influence of the dimensions of the different elements of the transistor 100 on this energy. In these simulations, the dielectric spacers 124 comprise silicon nitride. The gate dielectric 118 is here composed of 2 nm of SiO 2 and 2 nm of HfO 2. The elements 106, 108, 110, 112 and 114 are made of silicon. The gate 120 is a metal gate. A first simulation is carried out by fixing the dimensions LD = TD = 8 nm, Ts = 10 nm and TOX_GRILLE = 2 nm in order to evaluate the influence of the thickness Tc of the tunnel junctions 112, 114 on the charge energy of the quantum island 110 of transistor 100. Tc (nm) 2 3 4 5 6 7 E load (meV) 47.4 46.4 44.9 42.3 37.6 30.7 The table above shows a a clear increase in charge energy when the thickness Tc of the tunnel junctions 112, 114 decreases because a reduction of this thickness Tc of the tunnel junctions 112, 114 on each side of the quantum island 110 increases the barrier height on each side of the quantum island 110. A second simulation is carried out by fixing the dimensions LD = TD = 8 nm, Tc = 3 nm and TOX_GRILLE = 3 nm in order to evaluate the influence of the length Ts of the Tunnel junctions 112, 114 on the charge energy of the quantum island 110 of the transistor 100. Ts (nm) 4 5 6 7 8 9 10 11 E load (meV) 45.3 46.46 47.17 47, 7 48.1 48.37 48.56 48.71 Ts (nm) 12 13 14 3033665 17 E load (meV) 48.82 48.9 48.97 The table above shows an increase in charge energy when the length Ts of the tunnel junctions 112, 114 increases because an increase of this length Ts of the tunnel junctions 112, 114 on each side of the quantum island 110 increases the isolation of the quantum island 110 with respect to the electron reservoirs formed by the source 106 and drain 108 regions of the transistor 100. This increase however becomes very small from Ts = 10 nm. A third simulation is carried out by fixing the dimensions LD = 8 nm, TD = 5 nm, Tc = 3 nm and Ts = 10 nm in order to evaluate the influence of the thickness TOX_GRILLE of the gate dielectric 118 on the energy of charge of the quantum island 110 of the transistor 100. ToX_GRILLE (nm) 1 2 3 4 5 6 7 8 E load (meV) 54.78 64.51 71 75.1 78.37 80.57 82.48 83, The table above shows that the greater the TOX_GRILLE thickness, the higher the charge energy in the quantum island 110 increases. The thickness Tox_GRILLE is therefore preferably chosen to be large enough to avoid a disturbance of the electrons present in the quantum island 110 by the gate 120, and to favor the mono-electronic effect in the transistor 100. Several transistors 100 may advantageously be made. next to each other on the same substrate and as they are electrically connected in series with each other. FIG. 2 represents four transistors 100 each similar to that previously described in connection with FIG. 1. In this configuration, the first semiconductor portions 106, 108 lying between two transistors 100 arranged side by side are common to these two transistors. and thus form both the drain region of one of the two transistors and the source region of the other of the two transistors. The length (dimension along the X axis) of such a first portion 106, 108 is for example between about 50 nm and several hundreds of nm, and for example equal to about 50 nm.
    [0017] A method of making transistor 100 according to a first embodiment is described below with reference to FIGS. 3A to 3F. This method is implemented from an SOI substrate comprising the solid semiconductor layer 102 (not visible in FIGS. 3A to 3F), the buried dielectric layer 104 and the semiconductor superficial layer referenced 105 on FIG. 3A and comprising, for example, silicon and / or germanium and / or SiGe and / or InGaAs and / or InP and / or any other III-V material. The thickness of the surface layer 105 is here equal to the thickness of the quantum island of the transistor 100 to be realized, that is to say equal to the thickness TD of the second semiconductor portion 10 110 of the transistor 100 previously described in connection with FIG. 1. The layer 105 is etched so that the remaining portions of this layer 105 form semiconductor nanowires 126, that is to say portions each of elongate shape comprising their largest dimension (length) in the main plane of the substrate (plane (X, Y)). In FIG. 3B, the length of the nanowires 126 corresponds to the dimension parallel to the X axis, the width of the nanowires 126 corresponds to the dimension parallel to the Y axis and the thickness of the nanowires 126 (equal to that of the TD thickness of the second semiconductor portion 110) corresponds to the dimension parallel to the Z axis. Advantageously, the width W of the nanowires 126, which is equal to that of the second semiconductor portion 110 and to those of the third semiconductor portions 112, 114, is less than or equal to about 10 nm, and for example equal to about 5 nm. In the example described here, the etching used to etch the layer 105 also etches part of the thickness of the buried dielectric layer 104 according to the pattern of the nanowires 126, also forming a slight shrinkage of the dielectric material of the layer 104 under the edges of the nanowires 126. This over-etching is not mandatory but improves the electrostatic coupling of the gate 120. Each of the nanowires 126 is here intended to be used for producing a single electron transistor 100, and comprises first portions 128, 130 from which the first semiconductor portions 106, 108 are intended to be made, third portions 132, 134 from which the third semiconductor portions 112, 114 are intended. to be made, and a second portion forming the second semiconductor portion 110 (these different parts are visible from Figure 3C). In the following description, the realization of a single transistor 100 is described. After this etching, the materials of the gate dielectric 118 and the gate 120 are deposited. A hard mask 116 is then produced on these layers of materials which are then etched according to the pattern of the hard mask which corresponds to that of the gate of the transistor 100 (FIG. 3C). The grid thus produced is arranged in particular on the second semiconductor portion 110 intended to form the quantum island of the transistor 100. These steps forming the gate of the transistor 100 are identical to the conventional steps of producing a gate of a CMOS transistor. Although not visible in FIG. 3C, the gate dielectric 118 and the gate 120 extend along the Y axis such as the lateral flanks of the second semiconductor portion 110 which are perpendicular to the this axis are covered by the gate dielectric 118 and the gate 120 forming a structure of the type "Tri-Gate" or "Omega-Gate". The portions of the nanowire 126 which are not covered by the grid 120 and the gate dielectric 118, i.e., the portions 128, 130, 132 and 134, are then partially etched in the direction of their thicknesses. so as to keep only a semiconductor thickness equal to the thickness Tc of the third semiconductor portions 112, 114 formed by this etching (FIG. 3D). The third semi-conductor portions 112, 114 thus formed form constrictions to serve as tunnel barriers between the quantum island 110 and the source 106 and drain 108 regions of the transistor 100. This remaining semiconductor thickness is also selected so that the first etched portions 128, 130 are of sufficient thickness that epitaxy can be carried out from these etched portions 128, 130 to form the first semiconductor portions 106, 108.
    [0018] In conventional thin-film CMOS technologies (such as the FDS01 technology for example), such etching of the semiconductor active layer is, on the contrary, to be avoided since this would pose problems of access resistances that could degrade the performances of the devices. MOSFET.
    [0019] After this etching, the dielectric spacers 124 are made on the third portions 112, 114, around the hard mask 116, the gate 120, the gate dielectric 118 and a portion of the second portion 110, by deposition and etching one or more dielectric materials (Figure 3E). A semiconductor epitaxy is then implemented from the portions 128, 130 of the nanowire 126 not covered by the gate 120 and by the dielectric spacers 124, thus forming the first semiconductor portions 106, 108 corresponding to the regions source and drain of transistor 100 (FIG. 3F). The transistor 100 is then completed by etching the hard mask 116 as well as the portions of the dielectric spacers 124 covering the lateral flanks of the hard mask 116. The silicide portions 122 are then made on the gate 120 as well as on the source regions 106. and drain 108. A method of making transistor 100, according to a second embodiment, is described below with reference to FIGS. 4A-4G. The steps previously described in connection with FIGS. 3A to 3C are first implemented in order to arrive at the structure shown in FIG. 4A. At this stage, unlike the first embodiment previously described in which a partial etching of the thickness of the semiconductor not covered by the gate is carried out, temporary spacers 136, 25 comprising for example nitride such as SiN or SiBCN, are made on the third portions 132, 134 of the nanowire 126, around the hard mask 116, the gate 120, the gate dielectric 118 and a portion of the second portion 110 (Figure 4B). The first semiconductor portions 106, 108 are then made by semiconductor epitaxy from the portions of nanowire 126 not covered by gate 120 and by temporary spacers 136, i.e. first portions 128 and 130, thereby forming the first semiconductor portions 106, 108 corresponding to the source and drain regions of the transistor 100 (Figure 4C). After this epitaxy, a dielectric material 138, for example semiconductor oxide, is deposited on the entire structure produced and then a planarization step such as a CMP ("Chemical Mechanical Planarization" or planarization mechanical-chemical) is implemented so as to planarize this dielectric material 138 with a stop on the hard mask 116 (Figure 4D). The temporary spacers 136 are then selectively withdrawn from the dielectric material 138, for example by selective etching against the dielectric material 138, with the semiconductor 132 of the third portions 132, 134 of the nanowire 126 being stopped (FIG. 4E). The temporary spacers 136 are thus made with one or more dielectric materials that can be etched selectively with respect to the dielectric material 138. The withdrawal of the temporary spacers 136 forms empty spaces 140 allowing access to the third portions 132, 134 of the nanowire 126.
    [0020] The third portions 132, 134 of the nanowire 126 are then thinned by etching to obtain the desired thickness Tc (without being limited, as in the first method of embodiment previously described, to a thickness making it possible to produce an epitaxy to form the source and drain regions of the transistor) and thus form the third semiconductor portions 112, 114 which have for example a thickness Tc equal to about 2 nm (Figure 4F). At this stage of the process, it may be advantageous to perform a local amorphization of the third semiconductor portions 112, 114, for example by an ion implantation of silicon or germanium in the semiconductor of the third portions 112, 114, from the empty spaces 140, which makes it possible to reinforce the confinement potential of the quantum island 110 of the transistor 100. Apart from these amorphous semiconductor portions 112, 114, the other portions 106, 108 and 110 comprise semiconductors. lens. The dielectric material 138 is then removed and the dielectric spacers 124 are then made by deposition and etching at the free locations 3033665 22 formed by the removal of the temporary spacers 136 on the third semiconductor portions 112, 114 (Figure 4G). The transistor 100 is then completed by etching the hard mask 116 as well as the portions of the dielectric spacers 124 covering the lateral flanks of the hard mask 116. The silicide portions 122 are then made on the gate 120 as well as on the source regions 106. and drain 108. A method of making transistor 100, according to a third embodiment, is described below with reference to FIGS. 5A-5E. The steps previously described in connection with FIGS. 3A to 3C are first implemented in order to arrive at the structure shown in FIG. 5A. However, unlike the two previous embodiments in which the nanowire 126 is made such that its thickness corresponds to that of the second portion 110, the nanowire 126 here has a thickness greater than the thickness TD desired for the quantum island. In addition, contrary to the two previous embodiments in which the gate 120 and the gate dielectric 118 are made on the second portion 110, a false gate ("dummy gate") formed of a dielectric portion 142, for example in SiO 2, and a polysilicon portion 144, is made on the second portion 146 of the nanowire 126 (this second portion 146 having a thickness greater than the desired TD thickness for the quantum island).
    [0021] As in the second embodiment, the temporary spacers 136 are then made (FIG. 5B), then the sources 106 and drain 108 are made by epitaxy, the assembly then being covered by the dielectric material 138 which is planarized with a stop on the hard mask 116 (FIG. 5C). The hard mask 116 is then removed. The polysilicon portion 144 is then removed for example by chemical etching with a TMAH solution. A slight deoxidation is finally performed to remove the dielectric portion 142 (Figure 5D). An empty space 148 then forms an access to the second portion 146 of the nanowire 126. Thinning of the semiconductor of the second portion 146 is then implemented in order to form the second portion 110 of desired thickness TD.
    [0022] This thinning may be performed to provide an island thickness of some 23 nanometers if necessary, for example between about 1 nm and 5 nm. This thinning made solely to form the second portion 110 makes it possible to control the thickness of the quantum island of the transistor 100. The gate dielectric 118, the gate 120 and the hard mask 116 are then made in the empty space. (Figure 5E). The transistor 100 is then completed as in the second embodiment by implementing the steps previously described in connection with FIGS. 4E to 4G, then by etching the hard mask 116 as well as the portions of the dielectric spacers 124 covering the lateral flanks of the hard mask 116, and making the silicide portions 122 on the gate 120 as well as the source regions 106 and drain 108. The amorphization of the semiconductor of the third portions 112, 114 may or may not be implemented . In a variant of this third embodiment, the steps of removing the temporary gate (142 + 144), the etching of the second part 146 and the making of the gate 120 and the gate dielectric 118 can be implemented. after the steps of removing the temporary spacers 136, thinning the third portions 132, 134 and making the dielectric spacers 124, that is to say after the steps previously described in connection with Figures 4A to 4G. Transistor 100 can also be realized by a method according to a fourth embodiment. In this fourth embodiment, the structure previously described in connection with FIG. 5A, comprising in particular the temporary gate 142 + 144, is realized. Then, in place of making the temporary spacers 136, the dielectric spacers 124 (i.e., the definitive dielectric spacers of the transistor 100) are realized. The steps previously described in connection with FIGS. 5C to 5E consisting in making the dielectric material 138, removing the temporary gate and producing the gate dielectric 118 and the gate 120, are then implemented. The transistor 100 is then completed by removing the dielectric material 138, etching the hard mask 116 as well as the portions of the dielectric spacers 124 covering the lateral flanks of the hard mask 116, and making the silicide portions 122 on the grid 120 as well as only on the source 106 and drain 108 regions.
    [0023] According to another method, it is possible first of all to carry out an epitaxy on the entire nanowire to obtain a thickness corresponding to that desired for the source and drain, then to produce a temporary gate and temporary spacers, and to terminate the process. by a first thinning to make the island and a second thinning to form the tunnel junctions.
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. A single-electron transistor (100) having at least: - first semiconductor portions (106, 108) forming source and drain regions, - a second semiconductor portion (110) forming at least one quantum island third semiconductor portions (112, 114) forming tunnel junctions between the second semiconductor portion (110) and the first semiconductor portions (106, 108), - a gate (120), and a gate dielectric (118) disposed at least on the second semiconductor portion (110), wherein a thickness of each of the first semiconductor portions (106, 108) is greater than that of the second semiconductor portion (110); -conductor (110), and wherein a thickness of the second semiconductor portion (110) is greater than that of each of the third semiconductor portions (112, 114).
    [0002]
    A single electron transistor (100) according to claim 1, further comprising dielectric spacers (124) disposed on the third semiconductor portions (112, 114) and against sidewalls of the gate (120), the gate dielectric (118) and a portion of the second semiconductor portion (110).
    [0003]
    3. Single electron transistor (100) according to one of the preceding claims, wherein the thickness of the second semiconductor portion (110) is between about 2 nm and 15 nm and / or the thickness of each third semiconductor portions (112, 114) are between about 1 nm and 5 nm and / or a length of each of the third semiconductor portions (112, 114), which corresponds to a distance between the second portion of one semiconductor portion (106, 108) is between about 10 nm and 40 nm 110), which corresponds to a distance between the third semiconductor portions (112, 114), is less than or equal to about 10 nm. 5
    [0004]
    4. Single electron transistor (100) according to one of the preceding claims, wherein the semiconductor of the third semiconductor portions (112, 114) is amorphous.
    [0005]
    The single electron transistor (100) according to one of the preceding claims, wherein the gate (120) and the gate dielectric (118) overlap sidewalls of the second semiconductor portion (110).
    [0006]
    6. Single electron transistor (100) according to one of the preceding claims, wherein the first (106, 108), second (110) and third (112, 114) semiconductor portions are disposed on a dielectric layer. buried (104) of a semiconductor-on-insulator substrate.
    [0007]
    7. A method of producing a single-electron transistor (100), comprising at least the following steps: - producing first semiconductor portions (106, 108) forming source and drain regions; a second semiconductor portion (110) forming at least one quantum island, - producing third semiconductor portions (112, 114) forming tunnel junctions between the second semiconductor portion (110) and the first semiconductor portions (106, 108), - producing a gate (120) and a gate dielectric (118) arranged at least on the second semiconductor portion (110), wherein a thickness of each of the first semiconductor portions (106, 108) is greater than that of the second semiconductor portion (110), and wherein a thickness of the second semiconductor portion (110) is superior to that of each of the third semiconductor ports (112, 114).
    [0008]
    8. The method of claim 7, further comprising a step 5 of making dielectric spacers (124) disposed on the third semiconductor portions (112, 114) and against the lateral flanks of the gate (120), the gate dielectric (118) and a portion of the second semiconductor portion (110).
    [0009]
    The method of claim 8, further comprising a first step of providing a semiconductor element (126) of a thickness equal to that of the second semiconductor portion (110), including first semiconductor elements (128). 130) and third (132, 134) parts from which the first (106, 108) and third (112, 114) semiconductor portions are intended to be made, and a second portion of which forms the second portion of semi -conductor (110), and wherein: - the gate (120) and the gate dielectric (118) are made at least on the second semiconductor portion (110), then - the first (128, 130) and third (132, 134) portions of the semiconductor element (126) are partially etched such that their thicknesses are equal to those of the third semiconductor portions (112, 114), the third etched portions of the semiconductor element (126) forming the third port semiconductor ions (112, 114), then - the dielectric spacers (124) are formed on the third semiconductor portions (112, 114) and then the first semiconductor portions (106, 108). are made from the first portions (128, 130) of the semiconductor element (126).
    [0010]
    The method of claim 8, further comprising a first step of providing a semiconductor element (126) of a thickness equal to that of the second semiconductor portion (110), including first semiconductor elements (128). , 3033665 28 130) and third (132, 134) parts from which the first (106, 108) and third (112, 114) semiconductor portions are intended to be made, and a second portion forms the second portion semiconductor (110), and wherein: - the gate (120) and the gate dielectric (118) are formed at least on the second semiconductor portion (110), and then - temporary spacers (136); ) are formed on the third portions (132, 134) of the semiconductor element (126), and then - the first semiconductor portions (106, 108) are made from the first portions (128, 130). of the semiconductor element (126), and then - the temporary spacers (136) ) are removed, and then - the third parts (128, 130) of the semiconductor element (126) are partially etched such that their thicknesses are equal to those of the third semiconductor portions (112, 114), the third portions etched portions of the semiconductor element (126) forming the third semiconductor portions (112, 114), then - the dielectric spacers (124) are formed on the third semiconductor portions (112, 114) . 20
    [0011]
    11. The method of claim 8, further comprising a first step of producing a semiconductor element (126) of greater thickness than that of the second semiconductor portion (110), comprising first (128, 130), second (146) and third (132, 134) parts from which the first (106, 108), second (110) and third (112, 114) semiconductor portions are to be made, and wherein: - a temporary gate (142, 144) is formed at least on the second portion (146) of the semiconductor element (126), then - temporary spacers (136) are provided on the third portions ( 132, 134) of the semiconductor element (126), then the first semiconductor portions (106, 108) are made from the first portions (128, 130) of the semiconductor element. (126), then - the temporary grid (142, 144) is removed, then - the second part (146) of the semiconductor element (126) is partially etched so that its thickness is equal to that of the second semiconductor portion (110), the second etched portion of the semiconductor element (126) forming the second semiconductor portion (110), then - the gate (120) and the gate dielectric (118) are formed at least on the second semiconductor portion (110), and then the temporary spacers (136) are withdrawn, then - the third portions (132, 134) of the semiconductor element (126) are partially etched such that their thicknesses are equal to those of the third semiconductor portions (112, 114), the third portions etched electrodes of the semiconductor element (126) forming the third semiconductor portions (112, 114), and then the dielectric spacers (124) are formed on the third semiconductor portions (112, 114).
    [0012]
    12. The method of claim 11, wherein the steps of removing the temporary gate (142, 144), etching the second portion (146) of the semiconductor element (126) and making the gate (120) and the gate dielectric (118) are implemented after the step of forming the dielectric spacers (124). 25
    [0013]
    13. Method according to one of claims 10 to 12, further comprising a step of amorphisation of the third parts (132, 134) of the semiconductor element (126) implemented between the step of withdrawal of temporary spacers ( 136) and the step of partially etching the third portions (132, 134) of the semiconductor element (126) or between the step of partially etching the third portions (132, 134) of the semiconductor element. (126) and the step of forming the dielectric spacers (124).
    [0014]
    The method of claim 8, further comprising a first step of providing a semiconductor element (126) of greater thickness than that of the second semiconductor portion (110), including first semiconductor elements (128). , 130), second (146) and third (132, 134) parts from which the first (106, 108), second (110) and third (112, 114) semiconductor portions are to be made, and wherein A temporary gate (142, 144) is formed at least on the second portion (146) of the semiconductor element (126), then - the first (128, 130) and third (132, 134) parts of the semiconductor element (126) are partially etched such that their thicknesses are equal to those of the third semiconductor portions (112, 114), the third etched portions of the semiconductor element (126) forming the third portions of semiconductor (112, 114), and then Dielectric spacers (124) are formed on the third semiconductor portions (112, 114), and then the first semiconductor portions (106, 108) are made from the first portions (128, 130) of the semiconductor portions (112, 114). semiconductor element (126), - the temporary gate (142, 144) is removed, and then - the second portion (146) of the semiconductor element (126) is partially etched so that its thickness is equal to that of the second semiconductor portion (110), the second etched portion of the semiconductor element (126) forming the second semiconductor portion (110), and - the gate (120) and the dielectric of gate (118) are formed at least on the second semiconductor portion (110).
    [0015]
    15. Method according to one of claims 7 to 14, wherein the first 30 semiconductor portions (106, 108) are produced by epitaxy.
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1552005|2015-03-11|
    FR1552005A|FR3033665B1|2015-03-11|2015-03-11|SINGLE ELECTRONIC TRANSISTOR AND METHOD FOR MAKING SAME|FR1552005A| FR3033665B1|2015-03-11|2015-03-11|SINGLE ELECTRONIC TRANSISTOR AND METHOD FOR MAKING SAME|
    US15/066,590| US9911841B2|2015-03-11|2016-03-10|Single-electron transistor and its fabrication method|
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