• 专利附录
  • 专利说明
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    • 专利摘要:
    The invention relates to a device for detecting electromagnetic radiation, comprising: - a substrate (3), - at least one thermal detector (2), arranged on the substrate, - an encapsulation structure (5) of the detector, comprising an encapsulation layer (6) extending around and above the detector so as to define with the substrate a cavity (4) in which the detector is located, characterized in that the encapsulation layer comprises a peripheral wall (6a) which surrounds the detector, and which has a section, in a plane parallel to the plane of the substrate, of square or rectangular shape, the corners (6a-3) are rounded.
    公开号:FR3033043A1
    申请号:FR1551491
    申请日:2015-02-20
    公开日:2016-08-26
    发明作者:Geoffroy Dumont；Laurent Carle；Pierre Imperinetti；Stephane Pocas；Jean-Jacques Yon
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The field of the invention is that of devices for detecting electromagnetic radiation, in particular infrared or terahertz radiation, comprising at least one thermal detector, preferably a detector, and a device for detecting radiation. matrix of thermal detectors, and an encapsulation structure which forms at least one hermetic cavity which each houses at least one detector. The invention applies in particular to the field of imaging and thermal thermography. STATE OF THE PRIOR ART A device for detecting electromagnetic radiation, for example infrared or terahertz, usually comprises a matrix of so-called elementary thermal detectors each comprising a portion able to absorb the radiation to be detected. In order to insure the thermal insulation of the thermal detectors, each portion is usually in the form of a membrane suspended above the substrate and thermally insulated from the latter by holding and thermal insulation elements. These holding elements also provide an electrical function by electrically connecting the thermal detectors to a reading circuit generally disposed in the substrate.
    [0002] To ensure optimal detector operation, a low level of pressure is required. For this purpose, the detectors are generally confined or encapsulated, alone or in groups, in hermetic cavities under vacuum or under reduced pressure. FIG. 1 illustrates an example of a detection device 1 adapted to detect infrared radiation, more precisely a pixel of the detection device formed here of a bolometric detector 2 resting on a substrate 3 and disposed alone in a hermetic cavity 4, as described in the publication by Dumont et al., Current Progress on Pixel Level Packaging for Uncooled IRFPA, Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 8353112012. In this example, the detection device 1 comprises an encapsulation structure 5, also called capsule, which defines the cavity 4 in which the bolometric detector 2 is located. encapsulation 5 comprises a thin encapsulation layer 6 which defines with the substrate 3 the cavity 4, and a thin sealing layer 7 which covers the encapsulation layer 6 and ensures the hermeticity of the cavity 4. The layers of Encapsulation 6 and sealing 7 are transparent to the electromagnetic radiation to be detected. The detection device 1 is produced by thin film deposition techniques and in particular sacrificial layers. During the production process, the sacrificial layers are removed and discharged from the cavity through one or more release vents 8 provided in the encapsulation layer 6. The sealing layer 7 ensures, after removal of the layers sacrificial and evacuation of the cavity 4, the closure of the release vents 8. In order to maximize the fill factor (fill factor, in English), that is to say the ratio between the surface of the membrane Absorbent on the entire surface of the pixel, in the plane of the substrate, it is desired to minimize the spacing between the detectors and the edge of the capsules, as well as the spacing between the capsules in the case where the device provides a plurality of capsules. For this, the optimal shape of the capsules, in a plane parallel to the plane of the substrate, is the square or rectangular shape whose corners are at right angles. However, the mechanical strength of the capsules remains to be improved. Indeed, a failure in the mechanical strength of a capsule leads to the rupture of the hermeticity of the cavity and therefore possibly to the functional loss of the detector, or even the matrix of detectors.
    [0003] SUMMARY OF THE INVENTION The object of the invention is to remedy at least in part the disadvantages of the prior art, and more particularly to propose a device for detecting electromagnetic radiation, for example infrared or terahertz, at least one detector. 5 thermal device disposed in a hermetic cavity formed by an encapsulation structure, the mechanical strength is reinforced. To this end, the invention proposes a device for detecting electromagnetic radiation, comprising a substrate, at least one thermal detector disposed on the substrate, an encapsulation structure of the thermal detector, comprising a layer of encapsulation extending around and above the thermal detector so as to define with the substrate a cavity in which the thermal detector is located. According to the invention, the encapsulation layer comprises a peripheral wall which surrounds the thermal detector, and which has a section, in a plane parallel to the plane of the substrate, of square or rectangular shape, whose corners are rounded.
    [0004] The peripheral wall may comprise a rounded portion and two rectilinear portions extending along axes substantially orthogonal to each other and connected to one another by the rounded portion, the rounded portion having a radius of curvature greater than or equal to twice the thickness of one of the rectilinear portions. The radius of curvature of the rounded portion may be measured from the inner surface, facing the cavity, of the rounded portion. The device may comprise an array of detectors arranged in the same cavity, the encapsulation layer further comprising at least one portion, called the internal support portion, located between two adjacent thermal detectors, which bears directly on the substrate.
    [0005] The internal bearing portion may have a profile, in a plane parallel to the plane of the substrate, of oblong shape, preferably at the rounded longitudinal ends.
    [0006] The inner bearing portion may comprise a side wall and a lower portion, said side wall extending substantially vertically over the entire height of the cavity and the lower portion being in contact with the substrate. The encapsulation layer may comprise at least one through orifice, called the release vent, having a transverse profile, in a plane orthogonal to the plane of the substrate, the width of which increases as the distance to the substrate increases. The encapsulation structure may further comprise a sealing layer covering the encapsulation layer so as to make the cavity hermetic, the sealing layer having a border which extends in the direction of the thickness of the layer 10 of sealing, from the edge of the release vent, with a non-zero angle with respect to an axis substantially orthogonal to the plane of the substrate, the transverse profile of the release vent forming an angle p with respect to the same axis orthogonal greater than the angle a. The detection device may comprise a matrix of thermal detectors 15 each comprising a membrane adapted to absorb the radiation to be detected, suspended above the substrate and thermally insulated from it by anchoring nails and heat insulating arms. the encapsulation layer having a plurality of through holes, said release vents arranged such that at least a portion of said thermal detectors each have a single release vent located opposite the corresponding absorbent membrane, preferably at the right from the center of said membrane. Each absorbent membrane may comprise a through orifice, facing the corresponding release vent, of dimensions equal to or greater than those of said vent. The suspended membrane may comprise a stack of a bolometric layer, a dielectric layer structured so as to form two distinct portions, and an electrically conductive layer structured so as to form three electrodes, including two electrodes intended to be worn. at the same electrical potential frame the third said central electrode intended to be brought to a different electrical potential, each electrode being in contact with the bolometric layer, the central electrode being electrically isolated from the other electrodes by the dielectric layer, the orifice passing through the central electrode and the bolometric layer in an area located in the portions of the dielectric layer.
    [0007] The encapsulation structure may further comprise a sealing layer covering the encapsulation layer so as to make the cavity hermetic, the substrate comprising a tie layer disposed opposite the through orifice of the corresponding membrane, and adapted to ensure the adhesion of the material of the sealing layer.
    [0008] The tie layer may extend under the whole of the corresponding membrane and be made of a material adapted to further ensure the reflection of the electromagnetic radiation to be detected. BRIEF DESCRIPTION OF THE DRAWINGS Other aspects, objects, advantages and features of the invention will become more apparent upon reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made with reference to the accompanying drawings in which: Figure 1, previously described with reference to an example of the prior art, is a schematic sectional view of a detection device according to one embodiment; Figure 2 is a diagrammatic representation, in top view, of a detection device according to one embodiment, having an array of detectors where each detector is housed in a separate cavity, the cavities having a rounded-corner shape; Figures 3 and 4 are partial and schematic representations, in top view, of the peripheral wall of the encapsulation layer according to a mode of realization, wherein the wall comprises, at the corners of the cavity, a portion rounded; FIG. 5 is a diagrammatic representation, in top view, of a detection device according to one embodiment, in which a matrix of detectors is housed in the same cavity; Figure 6 is a schematic sectional view along the plane A-A of the detection device shown in Figure 5; Figure 7 is a schematic sectional view along the plane B-B of the detection device shown in Figure 5; Figures 8 to 10 are schematic sectional views of a detection device according to one embodiment, at different stages of the production method; fig. 11 is a schematic representation in plan view of a release vent according to another embodiment, wherein the vent has an oblong shape profile with rounded ends; Fig. 12 is a partial sectional view of a portion of a detection device according to one embodiment; FIG. 13 is a diagrammatic cross-sectional view of a detection device according to one embodiment, in which a single detector evacuation vent disposed opposite the suspended membrane, and wherein the membrane has a through orifice located therein; at the right of the evacuation vent; Figures 14 and 15 are schematic views of a detection device according to another embodiment, wherein the suspended membrane has an intermediate dielectric layer.
    [0009] DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS In the figures and in the remainder of the description, the same references represent identical or similar elements.
    [0010] FIG. 1, previously described in part with reference to an example of the prior art, illustrates here an example of an electromagnetic radiation detection device according to one embodiment. In this example, the electromagnetic radiation detection device 1 is adapted to detect infrared or terahertz radiation. It comprises a matrix of thermal detectors 2, said elementary. Figure 1 is a partial view of the detection device and shows only a single detector disposed in a cavity. It comprises a substrate 3, for example silicon, comprising a read circuit (not shown) for example made in CMOS technology, for applying the polarizations necessary for the operation of the detectors and read the information from them. The thermal detector 2 comprises a portion adapted to absorb the radiation to be detected. This absorbent portion is generally thermally insulated from the substrate and may be disposed at a so-called absorbent membrane 9 suspended above the substrate 3 by holding and thermal insulating elements 11 such as anchoring nails. 11a associated with thermal insulation arms 11b. The membrane 9 is spaced from the substrate 3 by a distance typically between 1 μm and 5 μm, preferably 2 μm when the detector is designed for the detection of infrared radiation whose wavelength is between 8 μm and 14 μm.
    [0011] In the remainder of the description, the thermal detectors 2 are bolometers whose absorbent membrane 9 comprises a thermistor material whose electrical conductivity varies as a function of the heating of the membrane. However, this example is given for illustrative purposes and is in no way limiting. Any other type of thermal detector may be used, for example pyroelectric, ferroelectric, or even thermopile detectors. In an example detailed below with reference to FIG. 5, the detectors 2, arranged in one and the same cavity, can be brought closer to one another, in particular by connecting the heat-insulating arms 11b of different thermal detectors to one and the same nail. An anchor 11a, the reading architecture of the thermal detectors then being adapted, as described in documents EP1106980 and EP1359400. This results in an improvement in the sensitivity of the detectors 2 by the elongation of the isolation arms 11b and an increase in the filling ratio by reducing the area of each pixel not dedicated to the absorption of the electromagnetic radiation. The detection device is thus particularly suitable for small matriculation steps, for example between 25um and 17um, or even 12u.m. The detection device 1 comprises an encapsulation structure 5, or capsule, which defines, with the substrate 3, a sealed cavity 4 inside which the thermal detector 2 is located. The encapsulation structure 5 is formed. a thin encapsulation layer 6 deposited so that it comprises a peripheral wall 6a which surrounds the detector 2 and an upper wall 6b which extends above the detector 2. The upper wall 6b is substantially flat and extends over the suspended membrane 9 at a distance, for example, of between 0.5 μm and 5 μm, preferably 1.5 μm. FIG. 2 is a diagrammatic representation, in plan view, of a matrix of detectors 2 in which each detector is disposed in a hermetic cavity distinct from the neighbors. The encapsulation layer 6 is deposited so as to extend around and above each detector. Thus, a plurality of capsules 5 is formed. Each capsule 20 here has a section, in a plane parallel to the plane of the substrate, of square or rectangular shape with rounded corners. The inventors have observed that the production of rounded portions at the corners of the capsule improves the adhesion of the latter to the substrate. It has indeed been observed that the adhesion of the capsule is not homogeneous along the peripheral wall and that the corners of the capsule have a reinforced adhesion when rounded portions are made. As shown in FIGS. 3 and 4, the peripheral wall 6a of the encapsulation layer 6 is formed, at each corner of the capsule, with two portions 6a-1, 6a-2 extending substantially rectilinearly, each along an axis X 1, X 2, which is substantially orthogonal to each other. The rectilinear portions 6a-1 and 6a-2 do not meet at a right angle but are connected to each other by a rounded portion 6a-3. By rounded portion is meant a portion having at least one curved segment, for example circular or elliptical, or at least one straight segment, and preferably several straight segments, extending along a non-collinear axis to the respective axis of the straight portions. FIG. 3 shows an example of a rounded portion 6a-3 in the form of an arcuate segment connecting the rectilinear portions 6a-1 and 6a-2. The radius of this arc of a circle, measured from the outer surface of the rounded portion 6a-3, that is, oriented towards the outside of the cavity (excluded circle), may be greater than or equal to twice the width L of the peripheral wall. Preferably, the dimension of the rounded portion is such that the radius of an inscribed circle, that is to say tangent to the inner surface, facing the cavity, of the rounded portion is greater than or equal to twice the width L. The width L is defined as the average width of a substantially rectilinear portion 6a-1, 6a-2 of the peripheral wall 6a. The rounded portion 6a-3 preferably has a width substantially equal to that of the rectilinear portions. FIG. 4 shows another example of the rounded portion, which is a variant of that of FIG. 3. In this example, the rounded portion 6a-3 is formed by the succession of two straight segments inclined to each other. the other. It is possible to define an exisiting circle, tangent to the outer surface of each segment. The orientation of the segments may be such that the radius of the ex-marked circle is greater than or equal to twice the width L of the peripheral wall. Preferably, the orientation of the segments is such that the radius of an inscribed circle, that is to say tangent to the inner surface of the segments, is greater than or equal to twice the width L.
    [0012] By way of example, the width L of the peripheral wall of the encapsulation layer may be between about 200 nm and about 2 μm. The radius of the circle exinscribed or inscribed is greater than or equal to a value between 400 nm and 4 μm as a function of the width L, for example 2 μm in the case of a width L equal to 800 nm.
    [0013] According to an embodiment shown in FIGS. 5 to 7, the detection device comprises a matrix of detectors 2 which houses in the same hermetic cavity, with rounded corners. The encapsulation structure 5 comprises at least one internal support portion 12 located between two adjacent detectors 2, and preferably a plurality of internal support portions. Some internal bearing portions may also be disposed at the periphery of the detector array 2, at the edge of the cavity 4. The internal support portions 12 are formed by the thin encapsulation layer 6, which thus comprises continues the peripheral wall 6a, the upper wall 6b and the internal support portions 12.
    [0014] The inner bearing portions 12 rest, or bear, directly on the substrate 3. In other words, they are in direct contact with the substrate. These internal support portions 12 thus make it possible to reinforce the mechanical strength of the capsule 5. The adhesion of the capsule 5 to the substrate 3 is thus ensured on the one hand by a lower part of the peripheral wall 6a of the outer layer encapsulation 6 which rests on the substrate on the periphery of the cavity, and on the other hand by the internal support portion or portions 12 disposed in the cavity. This multiplicity of contact surfaces, distributed along the edge of the cavity and inside thereof, makes it possible to reinforce the mechanical strength of the capsule. In addition, since the capsule additionally comprises rounded corners, the overall adhesion of the capsule to the substrate is particularly enhanced by a synergistic effect between the multiplicity of the bearing surfaces disposed in the cavity and the localized reinforcement of adhesion at the corners of the cavity. By directly resting on or bearing directly on the substrate, it is meant that the internal bearing portions 12 are in direct contact with the substrate 3, whether with the material constituting the substrate or with a thin layer deposited on the substrate. surface of the substrate, for example a passivation layer or a tie layer, whether these thin layers extend continuously or not. The internal support portions therefore do not rest on the substrate via three-dimensional elements such as the holding elements of the suspended membranes.
    [0015] The inventors have indeed found that when support portions of the encapsulation layer rest, not on the substrate, but on the holding elements of the suspended membranes, more specifically on the anchoring nails, adhesion problems of the capsule on the substrate appear, which can lead to detachment or even destruction of the capsule. It seems indeed that the anchoring nails provide insufficient contact surface and flatness to ensure good adhesion of the support portions of the encapsulation layer. The detection device according to the invention thus reduces the risks of detachment of the capsule due to the mechanical stresses that sit in the thin layers of the capsule, whether intrinsic stresses of said thin layers or extrinsic stresses resulting from the differential thermal expansion of the capsule relative to the substrate. Thus, the encapsulation structure 5 defines a hermetic cavity 4 which houses the matrix of thermal detectors 2, this cavity 4 having a form of network of sub-cavities, or cells, communicating with each other, which each house a subset of 15 thermal detectors. The cells are separated from each other by the internal support portions. As explained above, this network of cells is delimited by the same encapsulation layer 6 which extends continuously so as to form the peripheral walls 6a and 6b of the upper cavity 4 and the inner support portions 12 .
    [0016] Thus, the radiation detection device 1 comprises a hermetic cavity 4 which houses a plurality of thermal detectors 2 while having a cavity mechanical strength reinforced by the presence of the internal support portion or portions 12 which rest directly on the substrate 3. The fact of accommodating a plurality of thermal detectors 2 in the cavity makes it possible to increase the degree of filling, for example by reducing the pitch of stamping or enlarging the absorbent membranes 9, or by pooling the anchoring nails 11a. Furthermore, parasitic electrical coupling between detectors 2 is avoided insofar as the internal bearing portions 12 are not in contact with the anchoring nails. This device also allows the elongation of the heat-insulating arms 11b to improve the thermal insulation of the absorbent membranes 9.
    [0017] Figure 6 is a sectional view along the plane AA of the detection device 1 shown in Figure 5. It shows in more detail the encapsulation layer 6 extending continuously around and above the matrix. detectors 2 so as to form the cavity 4. The peripheral wall 6a forms the edge of the cavity and the upper wall 6b extends above the detectors 2. The peripheral wall 6a has a peripheral lower portion 6c which is support, or rests, directly on the substrate, so as to ensure the adhesion of the capsule on the substrate. FIG. 7 is a sectional view along the plane BB of the detection device 1 shown in FIG. 3. In this figure, the internal bearing portions 12 each have a peripheral lateral wall 12a and a lower portion 12b, and take support directly on the substrate 3 at the bottom wall 12b. In other words, each inner support portion 12 is in direct contact with the substrate 3, either with the constituent material of the substrate 3 or, as mentioned above, with a thin layer deposited on the surface of the substrate.
    [0018] As shown in FIG. 5, the internal bearing portions 12 may have a profile, in the plane of the substrate, of oblong, that is elongated, shape. They can be arranged each between two adjacent suspended membranes and two neighboring anchoring nails, so as to optimize the filling rate. The ends of the oblong profile of the internal bearing portions 12 may be rounded, so as to enhance the adhesion thereof to the substrate 3 by a better distribution of mechanical stresses. The width of the internal support portions may be less than 1.5 μm, for example between 0.5 μm and 0.8 μm, and the length may be adjusted as a function of the space available between the sensors and in particular the nails. anchorage. In the example of FIG. 5, the heat-insulating arms 11b extend mainly along a first axis perpendicular here to the cutting plane BB, and the internal bearing portions 12 of the capsule 5 extend along a second axis orthogonal to the first axis, here collinear with the cutting plane AA, between two adjacent membranes 9 and two neighboring anchoring nails 11a. The width and the length of the internal support portions can be optimized by benefiting from the area left free in this area by the absence of heat-insulating arm 3033043 13. The surface of the internal bearing portions in contact with the substrate can thus be large, which improves the adhesion and the mechanical strength of the capsule. An example embodiment method is now detailed, with reference to FIGS. 8 to 10 which are views, in section along the axis CC, of the detection device represented in FIG. 5. The detection device 1 comprises a substrate 3 in which a circuit for reading and controlling the thermal detectors 2 is provided. The substrate 3 may comprise a passivation layer 13, for example made of silicon oxide SiO or silicon nitride SiN.
    [0019] According to an embodiment detailed below, the substrate 3 may also comprise a tie layer 14, continuous or not, deposited on the passivation layer 13. The attachment layer 14 may be made of titanium or chromium , and have a thickness for example between about 100nm and 300nm. In a manner known per se, a first sacrificial layer 15 is deposited and the anchoring nails 11a, the heat-insulating arms 11b and the absorbent membranes 9 are made in and on this sacrificial layer 15. The sacrificial layer can be produced polyimide or even a mineral material such as silicon oxide, polysilicon or amorphous silicon. As illustrated in FIG. 9, a second sacrificial layer 16 is then deposited on the first sacrificial layer 15, the anchoring elements 11a and thermal insulation 11b and the absorbent membranes 9. It is preferably made in the same material as that of the first sacrificial layer 15 and has a thickness for example between 0.5um and 5u.m. Photolithography and etching steps, for example RIE etching, are carried out so as to form, preferably during a sequence of common steps, trenches 17, 18 through the entire thickness of the sacrificial layers. , that is to say up to the substrate 3, more precisely here up to the attachment layer 14. A first trench 17 is made to extend continuously around the detector matrix 3033043 14 2 and is intended for the subsequent production of the peripheral wall of the encapsulation structure. The trench 17 is made so that the final shape of the capsule, in a plane parallel to the plane of the substrate, has a square or rectangular shape with rounded corners.
    [0020] At least one second trench 18, and preferably several, is formed between two adjacent detectors 2 for the purpose of subsequently forming the internal bearing portion. The first and second trenches 17, 18 have a substantially identical depth, so that the peripheral wall of the encapsulation structure and the side walls of the support portions have in fine a substantially identical height. The method is thus simplified, especially as regards the control of the etching depth. In the case where the sacrificial layers 15, 16 are made of polyimide, the process for producing the trenches may involve the deposition of a mineral protection layer (not shown), for example of SiN or SiO, or of amorphous silicon, on the surface 15 of the second sacrificial layer 16. A photolithography step then makes it possible to define openings in a resin layer where the trenches are to be etched. The etching of the trenches is then carried out in 2 steps, a first step during which the protective layer is etched, for example by RIE etching, at the right of the openings of the resin, a second step during which the first and 20 the second sacrificial layer are etched, for example by RIE etching, to the substrate at the level of the openings obtained in the protective layer at the first etching step. At this point, the protective layer can be removed. This sequence of steps is justified by constraints of chemical compatibility of the layers in the presence and by geometrical constraints (shape factor of the trenches). Indeed, the resin layer disappears during the second step of etching the polyimide because these layers are all organic in nature, therefore similarly sensitive to the etch chemistry implemented in the second step. The opening of the protective layer is then used as a relay to continue to limit the etching to the areas where it is desired to make the trenches. The method of the second etching step is moreover adapted to guarantee a great etching anisotropy, which makes it possible to obtain high form factors and vertical etching flanks (orthogonal to the plane of the substrate) without the presence of overhang. . It is further adapted to ensure high selectivity on the one hand with respect to the protective layer 5 (in SiN or SiO) and on the other hand with respect to the surface of the substrate, generally covered with an insulating passivation layer of SiO or SiN. This high selectivity is advantageous because it makes it possible to reduce the thickness of the protective layer (typically at 30 nm), which is likely to facilitate its subsequent removal. The trenches 17, 18, in particular the second trenches 18 intended for producing the internal support portions, have a high aspect ratio. By way of example, trenches with a width less than or equal to 1.5 μm, for example between 0.5 μm and 0.8 μm, may be produced in a layer of polyimide with a thickness of between 2 μm and 6 μm, for example 4 μm. m. The length of the second trenches 18 can be adapted according to the constraints of compact integration and strength of the capsule, and can be of the order of a few microns to a few millimeters. These dimensions of the trenches make it possible to produce a matrix of thermal detectors with a particularly low matriculation step, for example 17 μm or even 12 μm. The tie layer 14 is preferably made of a material with respect to which the etching of the trenches is selective, so as to avoid any etching of the substrate. The material may be titanium, chromium and the tie layer may have a thickness of the order of 100 nm to 300 nm. As shown in FIG. 10, a thin encapsulation layer 6, transparent to the radiation to be detected, is then deposited according to a conformal deposition technique adapted to obtain a good overlap of the vertical sides of the trenches 17, 18, with a thickness of substantially constant layer. It may be for example a layer of amorphous silicon developed by CVD or iPVD, a thickness typically between about 200nm and 2000nm when measured on a flat surface. The deposition of the encapsulation layer 6 on a surface structured by trenches of which at least one peripheral trench 17 continues (closed perimeter of square or rectangular shape, 3033043 16 with rounded corners) leads to the formation of the capsule 5, made with the material of the encapsulation layer and forming, in contact with the substrate 3, a cavity 4 in which is housed the matrix of detectors. The covering of the sides of the internal trenches 18 by the encapsulation layer 6 makes it possible to reproduce the shape of the internal trenches so as to form internal support portions 12, preferably of oblong shape with rounded ends. Note that these internal support portions 12 may be solid or hollow (consisting of two spaced walls) depending on whether the width of the inner trenches 18 is respectively small or large in front of the thickness of the encapsulation layer 6. Through holes, forming release vents 8 to allow evacuation of the sacrificial layers 15, 16 out of the cavity 4, are then carried out by photolithography and etching in the encapsulation layer 6. Each vent 8 may be square, rectangular circular, even oblong. The sacrificial layers 15, 16 are then removed by chemical etching, preferably in the gas phase or in the vapor phase, depending on the nature of the sacrificial layers (gaseous phase in the case of the polyimide described here), so as to form the cavity 4 housing the matrix. detectors 2, and the internal support portions 12. A sealing layer (not shown in Figure 10) is then deposited on the encapsulation layer 6 with a thickness sufficient to seal or plug the air vents. Release 8. The sealant layer is transparent to the electromagnetic radiation to be detected and may exhibit an antireflection function to optimize the transmission of radiation through the encapsulation structure. As such, it may be formed of sublayers of germanium and zinc sulfide in the case of a radiation to be detected in the wavelength range from 8um to 12um, for example a first underlayer of germanium of about 1.7um then a second zinc sulphide underlayer of about 1.2um. The sealing layer is preferably deposited by a vacuum thin-film deposition technique, such as vacuum evaporation of an electron beam heated source (EBPVD) or as cathode sputtering or ion beam sputtering. A sealed cavity 3033043 17 4 is thus obtained under vacuum or reduced pressure in which is housed the matrix of thermal detectors 2. According to another embodiment, not shown, which is different from the example of FIG. internal support 12 is formed between two adjacent detectors 25, in that a plurality of internal support portions, here two elongated profile internal support portions, extend longitudinally along the same axis, and are located between two detectors 2 adjacent. As in the example of FIG. 5, the longitudinal axis of the internal bearing portions 12 may be substantially perpendicular to the axis along which the insulation arms 11b extend mainly. Increasing the number of internal support portions 12 makes it possible to reinforce the adhesion of the capsule 5 to the substrate 3 and thus to reinforce the mechanical strength of the latter. According to another embodiment not shown, each detector 2 may be connected to four anchoring nails 11a, some of which are common to two directly adjacent detectors located on the same column (or on the same line). This architecture makes it possible both to improve the mechanical strength of the suspended membranes 9 and allows a sequential reading line by line (respectively column after column) of the array of detectors as is customary to do by using localized reading means end of column (respectively at the end of line) in a read circuit made in the substrate of the device. This architecture with shared anchoring nails provides an improvement in the sensitivity of the detectors because the heat insulating arms 11b can be lengthened and the filling ratio is improved by pooling the anchoring points 11a which do not contribute to capturing. the infrared signal. In this example, the internal support portions 12 of the capsule 5 are preferably positioned at the repeat pitch of the detectors, in the two dimensions of the matrix 25 of the detectors. The shape of the support portions 12 is essentially linear and those which are collinear with the isolation arms 11b are advantageously arranged between the arms of the detectors 2 of the same line. The positioning of the support portions along two axes is likely to enhance the adhesion of the capsule to the substrate.
    [0021] Advantageously, internal support portions 12 may also be made between the edge detectors and the peripheral wall 6a of the capsule 5. These additional support portions essentially have the function of restoring, for the edge detectors, a environment (especially from an optical point of view) comparable to that of the 5 core detectors. Another possibility to reduce these edge effects would be to provide, at the periphery of the matrix, crowns of false detectors, not contributing to the video signal of the matrix device. Crowns from one to a few detectors, typically two, perform this function satisfactorily. According to an embodiment shown in FIG. 11, the profile of the release vents 10 8, in a plane parallel to the plane of the substrate, has an oblong shape, that is to say an elongated shape. Its small dimension X, measured in the direction of the width of the vent, is chosen so as to ensure an effective sealing of the vent, and its large dimension Y, measured in the direction of the length of the vent, can be adjusted to facilitate the transit of reactive species and reaction products of the etching of the sacrificial layers 15, 16 being eliminated, which makes it possible to optimize the evacuation time of the sacrificial layers. As such, the width X may typically be between about 150 nm and 600 nm, while the large dimension Y may be of the order of a few microns, for example 5 μm. Advantageously, the vents 8 have an oblong shape with rounded longitudinal ends. For example, the rounded shape of one end may have a radius of curvature equal to half the width X of the vent. More generally, it may correspond to a continuous curved shape, as in the example of FIG. 11, circular or elliptical, or to a succession of straight or substantially curved segments. The inventors have shown that this form of vent makes it possible to avoid the risks of formation of cracks starting from the encapsulation layer 6 and propagating in the sealing layer 7. It is indeed essential to avoid any risk of cracks likely to break the hermeticity of the cavity, insofar as a local defect of hermeticity could lead to the functional loss of the complete device.
    [0022] As shown in FIG. 12, the inventors have observed that the sealing layer 7, bordering the vents 8, has a tendency to extend vertically, that is to say in the direction of the thickness of the layer 7, with a non-zero angle with respect to the normal, that is to say with respect to an axis orthogonal to the plane of the substrate, in particular when a vacuum thin-film deposition technique, such as evaporation or low pressure spraying is used. The average width X of the vents can be chosen as a function of the thickness e of the sealing layer 7 deposited, the thickness fraction B of the sealing layer effectively ensuring the hermeticity, and the angle of growth a. From the relation: X = 2.e. (1-B) .tan (a) By way of example, for a technique of deposition of the evaporation seal layer, the angle a is typically the order of 15 ° to 20 °. For a thickness e of sealing layer of 1800 nm and if it is desired that 1200 nm layer provides hermeticity (B = 2/3), we obtain an average width X of the vent of the order of 320 nm to 15 nm. 410nm. Furthermore, it is advantageous that the release vent 8 has a cross section, in a plane orthogonal to that of the substrate, which has a shape whose opening widens as one moves away from the substrate 3. In other words, the vent 8 has a transverse profile flared towards the outside of the cavity. It is narrower at its lower orifice 20 opening on the cavity and wider at its upper orifice opening out of the cavity. By way of example, the width Xe at the level of the lower orifice may be of the order of 100 nm to 350 nm while the width X5 at the level of the upper orifice may be of the order of 250 nm to 800 nm. In this example, the encapsulation layer 6 has a thickness of the order of 800 nm. As a result of this shape of the cross-section of the vent 8, it makes it possible to improve the sealing quality of the vent. More precisely, for the same thickness e of sealing layer, the inventors have observed that the fraction B of layer that effectively ensures the seal is greater than the case where the vent has a straight cross section, which improves the quality of sealing.
    [0023] Such a cross-section of the vent may be obtained by generating a slope on the sidewalls of the resin before etching the vent either by post-development creep or by modifying the conditions of exposure and / or development of the vent. the resin (exposure dose, focus, temperature and duration of post-exposure annealing) in a manner known to those skilled in the art. Such a cross section of the vent can also be obtained during the dry etching of the vent by adding an isotropic component to the etching for example by adding oxygen in the chemistry used to etch the vent. In the case where the encapsulation layer 6 is made of silicon, the addition of fluorinated gases in the etch chemistry such as SF6 or CF4 will also contribute to increasing the isotropic component of the etching. The beneficial effect of this particular profile of the vent is particularly apparent when the angle 3 that the profile of the vent with the normal to the substrate is greater than the angle a defined above. By way of example, for an encapsulation layer thickness of 800 nm and for a width Xe of the lower orifice of 100 nm, the width Xsup of the upper orifice may be greater than 530 nm ((3 = 15 °). or even greater than 680 nm W = 20 °). In the embodiment of Figure 12, the vent 8 is disposed at the edge of the cavity 4 but may be located at other locations in the cavity. As such, according to an embodiment illustrated in FIG. 13, the encapsulation layer 6 comprises at least one release vent 8 arranged such that at least one thermal detector 2 present in the cavity 4 has a single vent release 8 located opposite its absorbent membrane 9, preferably to the right of the center of the absorbent membrane 9. Thus, the realization of the vent is simplified by its distance from high-topographic areas that are the trenches, which provides a good dimensional control of the shape of the vent. In addition, the inventors have found that this positioning of a single vent opposite the absorbent membrane of the thermal detector makes it possible to overcome, after elimination of the sacrificial layers, the presence of sacrificial layer residues attached to the membrane. The presence of these residues has in particular been observed when at least two vents per detector are arranged on either side of the membrane. The residues are generally located in a zone equidistant from the different vents, in which the suspended membrane is located. They can modify the optical and / or electrical and / or thermal properties of the membrane (for example by increasing the mass of the membrane which induces a decrease in the response time of the detector), or even modify the level of residual pressure under the membrane. effect of progressive degassing. In addition, the step of eliminating the sacrificial layers is optimized, especially in terms of the elimination time of the sacrificial layers, by a conjugated effect between the oblong shape of the vent and the central position thereof vis-à-vis -vis the detector. In the case where the cavity 4 houses a single thermal detector 2, the encapsulation layer 106 then comprises a single release vent 8 located opposite the absorbent membrane 9 of the thermal detector. In general, the detector device comprises a matrix of thermal detectors 2 where each detector is encapsulated in a single cavity. The encapsulation structure then comprises a matrix of cavities all formed by the same encapsulation layer. At each cavity, the encapsulation layer 15 comprises a single release vent disposed opposite the absorbent membrane of the detector housed in the cavity. In the case where the cavity 4 houses a plurality of thermal detectors 2, the encapsulation layer then comprises at least one release vent, and preferably a plurality of release vents arranged so that at least a portion of said detectors 2 each have a single release vent 8 located opposite the corresponding absorbent membrane 9. Each thermal detector of the matrix may have a single vent arranged opposite the corresponding absorbent membrane. Alternatively, only a portion of the thermal detectors may each have a single release vent located opposite the corresponding membrane. It is then advantageous that, for a line or a column of thermal detectors, the release vents are arranged all the N odd detectors. This makes it possible to prevent sacrificial layer residues from being present at the level of the absorbent membrane of a detector not provided with a release vent. By way of example, in the case where N = 3, two adjacent detectors not provided with a release vent are arranged between two detectors each provided with a single release vent. In this example, none of the thermal detectors, whether or not provided with a release vent, will see its absorbent membrane degraded by the presence of sacrificial layer residues. This variant embodiment is particularly advantageous in the case of small stamping steps, for example when the detector layout pitch is of the order of 12 μm or less.
    [0024] It is then advantageous to provide a through orifice 19 at the membrane 9 of the detector, located at the right of the corresponding vent 8, and whose dimensions are equal to or greater than those of the vent 8, with a margin of safety to account for any misalignment of the vent and / or the orifice of the membrane which can be of the order of 200nm to 500nm. Thus, during the deposition of the sealing layer, a portion of the sealant material likely to fall through the vent will not settle on the membrane but will pass through the orifice of the membrane and settle on the substrate. It is then advantageous to provide (at the level of the substrate) a tie layer, under the membrane 9, at the level of the through-orifice 19, in order to ensure that the sealing agglomeration which has fallen down is gripped. Advantageously, this attachment layer may be a portion of the attachment layer 14 mentioned above, the material of which is then adapted to further ensure the attachment of the sealing material. Thus, during the step of sealing the cavity, in the case where a quantity of material of the sealing layer would pass through the vent, it would settle and adhere to the tie layer. This allows in particular to overcome the type of material present on the surface of the substrate, and more specifically the material used to passivate the upper face of the substrate. This attachment layer 14 may extend, continuously or discontinuously, at different areas of the cavity, more precisely under the membrane 9 and opposite its through hole 19 to ensure the attachment of the material of seal capable of falling through the vent 8; under the assembly of the membrane 9 to provide an optical reflection function of the radiation to be detected; at the level of the different trenches 17, 18 for the protection of the substrate 3 during the etching step during the formation of the trenches and to improve the grip of the encapsulation layer 6 on the substrate 23; and at the anchoring nails 11a to improve the grip of the nails on the substrate and to improve the electrical conduction between the nails and the read circuit disposed in the substrate. The thickness of this attachment layer is preferably constant over its entire extent, and especially at the different zones mentioned above. This tie layer may be made of chromium or titanium, aluminum, titanium nitride, or other suitable material, for example in the form of a stack of the materials mentioned, and have a thickness of the order of 100 nm to 400 nm. According to an embodiment shown in FIGS. 14 and 15, the detectors 2, the membrane 9 of which has a through orifice 19, have a membrane architecture with intermediate electrical insulation, as described in the document EP1067372. FIG. 14 is a view from above of an absorbent membrane 9 of a bolometric detector according to this type of architecture. It is connected to four anchoring nails 11a and is suspended by means of two heat insulating arms 11b. FIG. 15 is a sectional view along the plane A-A of FIG. 14. The membrane 9 comprises a layer of a bolometric (thus resistive) material, for example doped amorphous silicon or vanadium oxide. It also comprises a layer of a dielectric material 21 deposited on the bolometric layer 20 and which covers the latter on two distinct zones 21a, 21b.
    [0025] It also comprises a layer of an electrically conductive material 22 deposited on the dielectric layer 21 and the bolometric layer 20 and etched locally over the entire width of the membrane to the dielectric layer so as to form three distinct conductive portions 22a. , 22b, 22c. The conductive layer 22 extends over the isolation arms 11b to electrically connect the three portions 22a, 22b, 22c to the read circuit. Among the three conductive portions, two portions 22a, 22c located at the ends of the membrane 9 are electrically connected to two parts of the same isolation arm 11b and thus form two electrodes intended to be carried at the same electrical potential. These two end portions 22a, 22c surround a central portion 22b connected to another isolation arm which forms an electrode intended to be taken to another electrical potential. The dielectric layer 21 is etched so that each electrode 22a, 22b, 22c is in electrical contact with the bolometric material 20 and the end electrodes 22a, 22c are electrically isolated from the center electrode 22b. In this embodiment, the absorbent membrane 9 has a through hole 19, here of oblong profile, disposed in the center of the central electrode 22b. Preferably, the orifice 19 is disposed at the level where the dielectric layer 21 is etched. The orifice 19 thus passes only through the central electrode 22b and the bolometric layer 20. Preferably, the distance, measured in the width direction of the orifice 19, between the edge of the orifice and the edge of the dielectric layer 21, facing the orifice, is greater than or equal to the thickness of the bolometric layer 20 in contact with the central electrode 22b in this area. By this positioning of the orifice, any influence thereof on the electrical properties of the absorbent membrane is minimized or even eliminated.
    [0026] The example described with reference to FIGS. 14 and 15 shows a bolometric layer 20 in the lower part of the membrane 9, on which the dielectric layer 21 and the electrodes 22a, 22b, 22c rest. However, an inverted arrangement of the layers is also possible, in which the electrodes 22a, 22b, 22c are situated in the lower part of the membrane 9, on which the dielectric layer 21 and then the bolometric layer 20 rest.
    权利要求:
    Claims (13)
    [0001]
    REVENDICATIONS1. Electromagnetic radiation detection device (1), comprising: a substrate (3), at least one thermal detector (2), disposed on the substrate (3), an encapsulation structure (5) of the thermal detector (2), having an encapsulation layer (6) extending around and above the detector (2) so as to define with the substrate (3) a cavity (4) in which the thermal detector (2) is located, characterized in that the encapsulation layer (6) comprises a peripheral wall (6a) surrounding the thermal detector (2), and which has a section, in a plane parallel to the plane of the substrate, of square or rectangular shape, the corners of which (6a-3) are rounded.
    [0002]
    2. Detection device according to claim 1, wherein the peripheral wall (6a) comprises a rounded portion (6a-3) and two portions (6a-1, 6a-2) rectilinear extending along axes (X1, X2). ) substantially orthogonal to each other and connected to each other by the rounded portion, the rounded portion having a radius of curvature greater than or equal to twice the thickness of one of the rectilinear portions (6a -1, 6a-2).
    [0003]
    3. Detection device according to claim 2, wherein the radius of curvature of the rounded portion (6a-3) is measured from the inner surface, facing the cavity, of the rounded portion.
    [0004]
    4. Detection device according to any one of claims 1 to 3, the device comprising a matrix of detectors (2) disposed in the same cavity, wherein the encapsulation layer (6) further comprises at least a portion ( 12), said internal support portion, located between two adjacent detectors (2), which bears directly on the substrate (3).
    [0005]
    5. Detection device according to claim 4, wherein the inner bearing portion (12) has a profile in a plane parallel to the plane of the substrate (3), oblong shape, preferably at the ends rounded longitudinal. 3033043 26
    [0006]
    6. Detection device according to claim 4 or 5, wherein the inner bearing portion (12) has a side wall (12a) and a lower portion (12b), said side wall (12a) extending substantially vertical over the entire height of the cavity (4) and the lower part (12b) being in contact with the substrate (3). 5
    [0007]
    7. Detection device according to any one of claims 1 to 6, wherein the encapsulation layer (6) comprises at least one through hole (8), said release vent having a transverse profile, in an orthogonal plane at the plane of the substrate (3), whose width increases as the distance to the substrate (3) increases.
    [0008]
    8. Detection device according to claim 7, wherein the encapsulation structure (5) further comprises a sealing layer (7) covering the encapsulation layer (6) so as to make the cavity (4) hermetic the sealing layer (7) having a border extending in the direction of the thickness of the sealing layer (7) from the edge of the release vent (8) with an angle of non-zero with respect to an axis substantially orthogonal to the plane of the substrate, and wherein the transverse profile of the release vent (8) forms an angle (3 with respect to the same orthogonal axis greater than the angle a.
    [0009]
    9. Detection device according to any one of claims 1 to 8, comprising a matrix of thermal detectors (2) each having a membrane (9) adapted to absorb the radiation to be detected, suspended above the substrate (3) and thermally insulated therefrom by anchoring nails (11a) and heat insulating arms (11b), the encapsulation layer (6) having a plurality of through holes (8), said release vents disposed so that at least a portion of said thermal detectors (2) each have a single release vent (8) located opposite the corresponding absorbent membrane (9), preferably at the center of said membrane (9). 25
    [0010]
    10. Detection device according to claim 9, wherein each absorbent membrane (9) has a through orifice (19), facing the corresponding release vent (8), of dimensions equal to or greater than those of said vent (8). 3033043 27
    [0011]
    11. Detection device according to claim 10, wherein the suspended membrane comprises a stack of a bolometric layer (20), a dielectric layer (21) structured so as to form two distinct portions (21a, 21b), and an electrically conductive layer (22) structured so as to form three electrodes (22a, 22b, 22c), of which two electrodes (22a, 22c) intended to be carried at the same electrical potential frame the third electrode (22b) said central unit intended to be brought to a different electrical potential, each electrode being in contact with the bolometric layer (20), the central electrode (22b) being electrically isolated from the other electrodes (22a, 22c) by the dielectric layer (21), the orifice passing through the central electrode (22b) and the bolometric layer (20) in an area in the portions (21a, 21b) of the dielectric layer (21).
    [0012]
    12. Detection device according to claim 10 or 11, wherein the encapsulation structure (5) further comprises a sealing layer (7) covering the encapsulation layer (6) so as to make the cavity (4) hermetic, and wherein the substrate 15 (3) comprises a tie layer (14) disposed facing the through hole (19) of the membrane (9) corresponding, and adapted to ensure the adhesion of the material of the sealing layer (7).
    [0013]
    13. Detection device according to claim 12, wherein the attachment layer (14) extends under the entire membrane (9) corresponding and is made of a suitable material to further ensure the reflection of the radiation electromagnetic to detect.
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    同族专利:
    公开号 | 公开日
    FR3033043B1|2020-02-28|
    US9831371B2|2017-11-28|
    EP3067676A2|2016-09-14|
    JP2016194508A|2016-11-17|
    US20160247955A1|2016-08-25|
    CA2920642A1|2016-08-20|
    EP3067676A3|2016-11-23|
    EP3067676B1|2020-09-16|
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    FR3033045B1|2015-02-20|2020-02-28|Commissariat A L'energie Atomique Et Aux Energies Alternatives|ELECTROMAGNETIC RADIATION DETECTION DEVICE WITH HERMETIC ENCAPSULATION STRUCTURE WITH RELEASE VENT|US10113915B1|2015-05-19|2018-10-30|Maxim Integrated Products, Inc.|Non-contact temperature measurement sensor|
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    法律状态:
    2016-02-29| PLFP| Fee payment|Year of fee payment: 2 |
    2016-08-26| PLSC| Search report ready|Effective date: 20160826 |
    2017-02-28| PLFP| Fee payment|Year of fee payment: 3 |
    2018-02-26| PLFP| Fee payment|Year of fee payment: 4 |
    2019-02-28| PLFP| Fee payment|Year of fee payment: 5 |
    2020-02-28| PLFP| Fee payment|Year of fee payment: 6 |
    2021-02-26| PLFP| Fee payment|Year of fee payment: 7 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1551491A|FR3033043B1|2015-02-20|2015-02-20|RADIATION DETECTION DEVICE COMPRISING AN ENCAPSULATION STRUCTURE WITH IMPROVED MECHANICAL HOLD|
    FR1551491|2015-02-20|FR1551491A| FR3033043B1|2015-02-20|2015-02-20|RADIATION DETECTION DEVICE COMPRISING AN ENCAPSULATION STRUCTURE WITH IMPROVED MECHANICAL HOLD|
    CA2920642A| CA2920642A1|2015-02-20|2016-02-10|Electromagnetic radiation detection device comprising an encapsulation structure with improved mechanical resistance|
    EP16156191.5A| EP3067676B1|2015-02-20|2016-02-17|Device for detecting radiation comprising an encapsulation structure with improved mechanical strength|
    US15/048,177| US9831371B2|2015-02-20|2016-02-19|Device for detecting radiation including an encapsulating structure having an improved mechanical strength|
    JP2016029632A| JP2016194508A|2015-02-20|2016-02-19|Radiation detector having encapsulation structure with improved mechanical strength|
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