• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a memory point comprising a pad (30) consisting of a stack of thin film regions, comprising a first region (40) made of a non-magnetic conductive material; a second region (41) of a magnetic material having a magnetization in a direction perpendicular to the main plane of the stud; a third region (42) of a nonmagnetic conductive material having characteristics different from those of the first region; the stud resting on a conductive track (1) adapted to circulate a selected direction of programming current, wherein the stud has an asymmetrical shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track , and in relation to its center of gravity.
    公开号:FR3031622A1
    申请号:FR1550273
    申请日:2015-01-14
    公开日:2016-07-15
    发明作者:Gilles Gaudin；Ioan Mihai Miron；Olivier Boulle；Hiyil Safeer Chenattukuz；Jean-Pierre Nozieres
    申请人:Centre National de la Recherche Scientifique CNRS；Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The present invention relates to a magnetic memory point, and more particularly to a current-induced reversal type magnetic memory point. STATE OF THE ART French Patent Application No. 2,963,152 describes a magnetic memory point as diagrammatically represented in FIGS. 1A, 1B and 2. FIGS. 1A and 1B respectively represent a sectional view and a perspective view. of a magnetic memory point as described in relation with Figures 1c-1f, 2a-2b and 3a-3d of the French patent application No. 2 963 152. Figure 2 is a simplified perspective view of this memory point . As illustrated in FIGS. 1A and 1B, this memory point comprises, above a conductive track 1, a stud 3. The stud 3 comprises a stack of regions each of which is formed of a portion of a layer thin or stack of several thin layers. The conductive track 1 is for example formed on a substrate 5 consisting of a silicon wafer coated with a silicon oxide layer and is connected between terminals A and B. The stack constituting the pad 3 comprises 3031622 B13979 2 successively from the track 1, a region 10 of a non-magnetic conductive material, a region 11 of a magnetic material, a region 12 of a non-magnetic material, a region 13 of a magnetic material and an electrode 14. The material layer 12 may be conductive; it is preferably an insulating material sufficiently thin to be traversed by electrons tunneling effect. There is a structural difference between the non-magnetic regions 10 and 12 so as to have an asymmetric system in a direction orthogonal to the plane of the layers. This difference may result in particular from a difference in material, thickness, or growth mode of these layers. Lists of materials that can constitute the various layers are given in the aforementioned patent application. The magnetic materials of regions 11 and 13 are formed under conditions such that they have a magnetization directed orthogonally to the plane of the layers. The magnetic material of the layer 13 is formed under conditions such that it retains an intangible magnetization (trapped layer). The upper electrode layer 14 is connected to a terminal C. The programming of the memory point is carried out by circulating a current between the terminals A and B, while a horizontally oriented field H (parallel to the plane of the layers and to the direction of current between terminals A and B) is applied.
    [0002] According to the relative directions of the current between the terminals A and B and the field vector H, the layer 11 is programmed so that its magnetization is oriented upwards or downwards. For the reading of this memory point, a voltage is applied between the terminal C and one or other of the terminals A and B.
    [0003] The resulting current between the terminal C and one or the other of the terminals A and B takes different values according to the relative direction of the magnetizations of the layers 11 and 13: high value if the two magnetizations are in the same direction and low value if the two magnetizations are in opposite directions.
    [0004] An important feature of the memory point described above is that its programming is done only through a current flowing between terminals A and B and a magnetic field applied in the plane of the layers, parallel to the current. No current flows from terminal A or B to terminal C during programming. This has the advantage of completely dissociating the read and write operations of the memory point. Many alternative embodiments are possible. In particular, each layer described above may consist of a stack of layers as is known in the art to acquire the desired characteristics. The layer portion 10 of a non-magnetic conductive material may be omitted, provided that the track 1 is made of a non-magnetic material suitable for the growth of the magnetic layer 11. The track 1 may then have an extra thickness under the pad 3 For the reversal of the magnetization in the layer 11 can be done, it is also necessary that spin-orbit pairs are present in the magnetic layer. To do this, it is necessary for example that the layer in contact with this layer 11 (or separated from it by a thin separating layer) is made of a material or composed of materials with strong spin-orbit coupling. Another solution is, for example, that the contact between the magnetic layer 11 and one or the other of the layers 10 and 12 creates this spin-orbit coupling; this can be achieved, for example, by hybridization of the magnetic layer 11 with the layer 12 if it consists of an insulator (see "Spin-orbit coupling effect by minority interface resonance states in singlecrystal magnetic tunnel junctions" , Y. Lu et al., Physical Review B, Vol 86, p.184420 (2012)).
    [0005] It should be noted that the memory point of FIGS. 1A and 1B can be decomposed into two elements: a storage element comprising track 1 provided with terminals A and B and layer portions 10, 11 and 12, and a reading element comprising in the example given above the layers 13 and 14 and the electrode C.
    [0006] With the same storage element, various reading modes could be envisaged, for example an optical reading. Figure 2 is a simplified view of a perspective view of the memory point of Figure 1B. Only track 1 and 5 the stack of layers or pad 3 are represented, as well as the electrodes A and B connected to contacts 20 and 21. As previously indicated, this memory point is programmable by the application of FIG. a current between terminals A and B simultaneously with the application of a magnetic field having a non-zero component in the direction of the current. Examples of means for generating a magnetic field are given in the aforementioned patent application. The application of an external field or the realization of specific magnetic layers suitable for creating the field H poses problems of practical realization.
    [0007] SUMMARY An object of the present application is to provide a magnetic memory point of the same type as that described above and in which the programming of the memory point is simplified. More particularly, it is provided here that the memory point can be programmed by simply applying a current in the absence of a magnetic field. To achieve this object, it is planned to replace the symmetrical stud described in the aforementioned patent application by an asymmetrical stud. It can be seen that the memory point 25 can be programmed by the simple application of an electric current in the track on which the memory pad rests, in the absence of any magnetic field. More particularly, there is provided here a memory dot comprising a pad consisting of a stack of thin layer regions, comprising: a first region of non-magnetic conductive material; a second region of a magnetic material having a magnetization in a direction perpendicular to the main plane of the stud; a third region of non-magnetic conductive material of different characteristics from that of the first region; said stud resting on a conductive track adapted to circulate a selected direction of programming current, wherein the pad has an asymmetrical shape on the one hand with respect to any plane perpendicular to the plane of the layers and parallel to the axis center of the track, and secondly relative to its center of gravity, from which it follows that the direction of magnetization in the second layer is programmable by the direction of circulation of said programming current, in the absence of external magnetic field. According to one embodiment, the first region 10 corresponds to a portion of the track underlying the stud or to an extra thickness of this underlying portion. According to one embodiment, the stud has a triangular shape with a first side parallel to the direction of the programming current and two other sides making for example an angle of ± 20 ° to ± 70 ° with respect to the first side. According to one embodiment, the stud has a triangular shape with rounded corners. According to one embodiment, the stud extends only over part of the width of the track.
    [0008] According to one embodiment, the second region comprises an alloy having a proper perpendicular magnetic anisotropy, namely, in particular FePt, FePd, CoPt or even a rare earth / transition metal alloy, in particular GdCo, TbFeCo.
    [0009] According to one embodiment, the second region comprises a metal or an alloy having in the stack a perpendicular magnetic anisotropy induced by the interfaces, in particular Co, Fe, CoFe, Ni, CoNi. According to one embodiment, at least the first region or third region is conductive and is made of a non-magnetic metal, such as Pt, W, Ir, Ru, Pd, Cu, Au, Bi, Hf or an alloy thereof. these metals, or is formed of a stack of several layers of each of these metals.
    [0010] According to one embodiment, the third region is a dielectric oxide such as SiOx, AlOx, MgOx, TiOx, TaOx, HfOx or a dielectric nitride such as SiNx, BNx. According to one embodiment, the thickness of the first and third regions is between 0.5 and 200 nm, more particularly between 0.5 and 100 nm, and preferably less than 3 nm. According to one embodiment, the third region is covered with a read layer of magnetic material and a reading electrode. According to one embodiment, the thickness of the second region is less than 3 nm. According to one embodiment, the first region is made of a conductive antiferromagnetic material.
    [0011] According to one embodiment, the memory point comprises a conductive buffer layer between the first region and the track. According to one embodiment, the thickness of the first region of antiferromagnetic material is between 1 and 200 nm, and preferably less than 10 nm. One embodiment provides a method of programming a memory point as above, including the step of passing in the track, and consequently in the first region of antiferromagnetic material, a current of own intensity to heat this material so as to disorganize its magnetization, the direction of this current being chosen to program the magnetization of the material of the storage layer in a desired orientation. BRIEF DESCRIPTION OF THE DRAWINGS These and other features and advantages will be set forth in detail in the following description of particular embodiments in a non-limiting manner with reference to the accompanying figures, in which: FIGS. 1A; 1B and 2 are schematic representations of a memory point as described in French Patent Application No. 2,963,152; Fig. 3 is a schematic perspective view of an embodiment of a memory point; Figure 4 is a schematic top view of the stud of Figure 3; Figures 5A-5J are schematic top views of contours of various embodiments of a memory point; Fig. 6 is a schematic perspective view of another embodiment of a memory point; and FIG. 7 shows various curves illustrating the operation of the memory point of FIG. 6. For the sake of clarity, the same elements have been designated with the same references in the various figures and, moreover, as is customary in the representation of FIGS. integrated components, the various figures are not drawn to scale. DETAILED DESCRIPTION As shown in FIG. 3, a memory point embodiment 20 comprises, on a conductive track 1 comprising at its ends connection layers 20 and 21 connected to terminals A and B, a pad 30 comprising the same stack. layers that the pad 3 described above. Thus the stud 30 comprises a region 40 made of a non-magnetic conductive material, a region 41 25 made of a magnetic material, a region 42 made of a non-magnetic material, this region 42 having a difference with respect to the region 40, a region 43 with a magnetic material and an electrode 44. The same variants as those described above and in the aforementioned French patent application apply.
    [0012] Unlike pad 3 of FIG. 2, stud 30 has a doubly asymmetrical configuration. On the one hand, it is asymmetrical with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track 1. On the other hand, it is asymmetrical with respect to its centroid which corresponds to the point C in As can be seen better in the top view of FIG. 4, this stud has for example a triangular shape. A first side is parallel to the direction of the programming current (from A to B). The other two sides, for example, form an angle of ± 20 ° to ± 70 ° and preferably ± 30 ° to ± 60 ° to the first side. Due to photolithography defects, the corners of the triangle will generally be rounded. We can voluntarily seek to obtain such a rounded form. It has been found that with a pad having such a doubly asymmetrical shape (with respect to a plane and with respect to its center of gravity), the only application of a programming current between terminals A and B makes it possible to program the layer 41 so that its magnetization is directed upwards or downwards according to the direction of the programming current. This is done without applying an external magnetic field. Of course, if a conductive region 40 is provided, its resistivity and that of the track 1 are chosen so that a substantial portion of the current between the terminals A and B flows in the region 40. It will be recalled that if the track 1 is in non-magnetic material, the region 40 may correspond to the portion of the track underlying the stud or to an extra thickness of this region. Figures aA-5J illustrate, by way of example, various shapes of asymmetric studs that may be used on a track 1. These figures will be considered an integral part of the present description.
    [0013] The studs 50 and 51 of FIGS. AA and 5B have triangular shapes like the stud of FIG. 4, but with different proportions and centering. The stud 52 of FIG. 5C has an elongated crescent shape in the direction of the track. In other words, the stud 52 has a trapezoidal shape provided with two tapered protuberances 52A and 52B at the ends of the base of the trapezium. It is now considered that the presence of tapered protuberances facilitates the triggering of the reversal of the magnetization during the passage of the programming current.
    [0014] The studs 53 to 55 of FIGS. 5D to 5F have chevron shapes, the tip of the chevron being turned towards one side of the track 1, the rafters having different dimensions and positions with respect to the width of the track. .
    [0015] The studs 56 to 59 of FIGS. 5G to 5J are studs in the form of triangles and chevrons with rounded corners. The various forms described above are combinable and modifiable as long as the double asymmetry rule mentioned here is respected. In particular, all contemplated shapes may be "rounded" or extend only over a portion of the width of track 1. With respect to the materials and thicknesses of the various regions of the stud, reference may be made to the aforementioned French patent application.
    [0016] By way of example: the magnetic region (41) can comprise an alloy having a proper perpendicular magnetic anisotropy, namely, in particular FePt, FePd, CoPt or even a rare earth / transition metal alloy, in particular GdCo, TbFeCo, 20 - the magnetic region (41) may comprise a metal or an alloy having in the stack a perpendicular magnetic anisotropy induced by the interfaces, in particular Co, Fe, CoFe, Ni, CoNi, - at least the region (40) or the region (42) may be conductive, of a non-magnetic metal such as Pt, W, Ir, Ru, Pd, Cu, Au, Bi, Hf or an alloy of these metals or in the form of a stacking of several layers of each of these metals, the region (42) may be a dielectric oxide such as SiOx, AlOx, MgOx, TiOx, TaOx, HfOx or a dielectric nitride such as SiNx, BNx, a thickness to allow a tunnel effect, - the thickness of one of the regions (40) and (42) can be com taken between 0.5 nm and 200 nm, more particularly between 0.5 nm and 100 nm, and preferably less than 3 nm, the upper region (42) can be covered with a reading layer (43) formed of a magnetic material, or a compound of magnetic materials, or of multiple layers of magnetic and non-magnetic materials and a reading electrode (44), and - the thickness of the magnetic region may be less than at 3 nm. In plan view, the lateral dimensions of the pad may be of the order of 10 to 100 nm.
    [0017] The memory points described above may be assembled into a memory array, as described in the aforementioned French patent application. Embodiment with high thermal stability The memory points described above have satisfactory functions. However, so that the intensity of the current required for programming is not excessive, storage layers should be as thin as possible. Memory layers having a thickness of less than 3 nanometers, having even a thickness of less than one nanometer, for example, can be produced. Such a reduction in thickness, if it favors the reduction of the intensity of the programming current, causes a defect of stability of the memory points. Indeed, memory cells comprising a storage layer as thin, may change accidentally, especially as a result of disturbances such as thermal agitation or parasitic magnetic fields. Thus, these memory points have, on average, a limited thermal stability, which leads to plan to reprogram them periodically.
    [0018] To overcome this disadvantage, it is intended to couple the magnetic, generally ferromagnetic, storage region to a region of antiferromagnetic material. FIG. 6 shows an embodiment of a memory point with increased thermal stability, corresponding to the embodiment of FIG. 3. In FIG. 6, the non-magnetic conductive layer 40 of FIG. 3 is replaced by a conductive layer 60 of antiferromagnetic material. This antiferromagnetic material is coupled by exchange interaction with the magnetic material, for example ferromagnetic, of the storage layer 41. This makes it possible to trap the magnetization of this magnetic layer and to ensure thermal stability. This structure is susceptible of various variants. In particular, under the layer of antiferromagnetic material 60 may be provided a conductive buffer sub-layer (not shown), intended in particular to allow satisfactory deposition of the layer of antiferromagnetic material 60. In addition, a thin layer of a conductive material Non-magnetic, for example copper may be disposed between the ferromagnetic and antiferromagnetic regions to reduce, if necessary, the coupling between these regions. As illustrated by the curves of FIG. 7, the programming of the memory point is carried out as follows. From a time t0, a current pulse I is sent between the terminals A and B, this current having a direction suitable for ensuring the reversal of the magnetization of the magnetic layer 41. In the first place, nothing occurs due to the coupling between the magnetic 41 and antiferromagnetic 60 layers. However, the temperature Taf of the antiferromagnetic material increases by Joule effect and the magnetization organization of this material is degraded, whereby the coupling between the magnetic material 41 and antiferromagnetic 60 decreases. From a time t1, this coupling becomes sufficiently weak so that magnetization "pol" of the layer 41 is reversed under the effect of the part of the current I flowing in the ferromagnetic and antiferromagnetic layers of the stud. Once the current pulse between the terminals A and B ceases, at a time t2, the temperature Taf of the antiferromagnetic material decreases and it resumes, at a time t3, an organized state that reconciles with the modified polarization of the magnetization in the storage layer 41 and ensures its stability. In order to avoid any writing errors due to thermal agitation during the cooling of the memory point, the current I can be decreased in a gradual and controlled manner in order to control the temperature of the pad and the amplitude. couples responsible for the reversal 5 of the magnetization more independently. The current I will for example be gradually decreased over a time interval of less than 1 μs, more particularly less than 100 ns and preferably less than or equal to 10 ns. A layer of antiferromagnetic material 10 of a nature such as the temperature TR for which the reduction of the exchange coupling with the magnetic layer, which allows the magnetization in the latter to be more free to turn, is chosen. significantly greater than the operating temperatures intended for the operation of the memory point or of the memory in which this memory point is incorporated. The temperature TR is for example of the order of 140 ° C for slow writes and of the order of 220 to 300 ° C for fast writes. By way of example of antiferromagnetic materials that may be used herein, mention may be made of alloys such as those based on Mn such as IrMn, FeMn, PtMn, or alloys of these compounds, such as PtFeMn, or materials obtained by rolling these materials. compounds or oxides such as CoOx or NiOx, the magnetic material, preferably ferromagnetic, used for the storage layer then being a material as described previously for the layer 41. In general, the electrical conductivity of the antiferromagnetic material must be sufficient for current to pass during the write phase and any antiferromagnetic material meeting this condition, coupling by exchange with the ferromagnetic material and having a blocking temperature between 120 and 450 ° C, may be used. Thus, the memory point described above can be stabilized even by providing a very thin magnetic layer having a thickness of less than 3 nm and preferably less than 13 nm. The layer of antiferromagnetic material 60 will have a thickness of between 1 and 200 nm, more particularly between 1 and 50 nm and preferably less than 10 nm. This thickness will depend on the material used, for example of the order of 10 nm for FeMn, and of the order of 4 to 5 nm for IrMn. The turning time of such a magnetic point can be very small. The current pulses I shown in FIG. 7 may, for example, have a duration of less than 15 nanoseconds.
    权利要求:
    Claims (16)
    [0001]
    REVENDICATIONS1. A memory dot comprising a pad (30) consisting of a stack of thin film regions, comprising: a first region (40; 60) of a conductive material; a second region (41) of a magnetic material having a magnetization in a direction perpendicular to the main plane of the pad; a third region (42) of a nonmagnetic conductive material having characteristics different from those of the first region; Said pad resting on a conductive track (1) adapted to circulate a selected direction of programming current, wherein said pad has an asymmetrical shape, on the one hand with respect to any plane perpendicular to the plane of the layers 15 and parallel to the central axis of the track, and secondly with respect to its centroid, from which it follows that the direction of magnetization in the second layer is programmable by the direction of circulation of said programming current, in the absence of external magnetic field.
    [0002]
    2. memory point according to claim 1, wherein the first region (40) corresponds to a portion of the track (1) underlying the stud or an extra thickness of this underlying portion. 25
    [0003]
    3. memory point according to claim 1 or 2, wherein the stud has a triangular shape with a first side parallel to the direction of the programming current and two other sides making for example an angle of ± 20 ° to ± 70 ° with respect to the first side. 30
    [0004]
    4. memory point according to claim 3, wherein the stud has a triangular shape with rounded corners.
    [0005]
    A memory point according to any one of claims 1 to 4, wherein the stud extends only a portion of the width of the track (1). 3031622 B13979 15
    [0006]
    6. memory point according to any one of claims 1 to 5, wherein the second region (41) comprises an alloy having a clean perpendicular magnetic anisotropy, namely, including FePt, FePd, CoPt or a rare earth alloy / transition metal, especially GdCo, TbFeCo.
    [0007]
    7. memory point according to any one of claims 1 to 5, wherein the second region (41) comprises a metal or an alloy having in the stack a perpendicular magnetic anisotropy induced by the interfaces, in particular Co, Fe, CoFe, Ni, CoNi.
    [0008]
    The memory tag of any one of claims 1 to 7, wherein at least the first region (40) or third region (42) is conductive and is of a non-magnetic metal, such as Pt, W, Ir, Ru, Pd, Cu, Au, Bi, Hf or an alloy of these metals, or is formed of a stack of several layers of each of these metals.
    [0009]
    The memory dot of any one of claims 1 to 7, wherein the third region (42) is a dielectric oxide such as SiO x, AlO x, MgO x, TiO x, TaO x, HfO x or a dielectric nitride such as SiNx , BNx.
    [0010]
    The memory tag of any one of claims 1 to 9, wherein the thickness of the first (40) and third (42) regions is between 0.5 and 200 nm, more particularly between 0.5 and 100. nm, and preferably less than 3 nm.
    [0011]
    The memory tag of any one of claims 1 to 10, wherein the third region (42) is covered with a read layer (43) of magnetic material and a read electrode (44).
    [0012]
    Memory dot according to any one of claims 1 to 11, wherein the thickness of the second region (41) is less than 3 nm. 3031622 B13979 16
    [0013]
    The memory tag of any one of claims 1, 3 to 7, 11 and 12, wherein the first region (60) is a conductive antiferromagnetic material.
    [0014]
    The memory tag of claim 13, comprising a conductive buffer layer between the first region (60) and the track (1).
    [0015]
    The memory tag of claim 13 or 14, wherein the thickness of the first region (60) of antiferromagnetic material is from 1 to 200 nm, and preferably less than 10 nm.
    [0016]
    A method of programming a memory point according to any one of claims 13 to 15, comprising the step of passing in the track, and consequently in the first region (60) of antiferromagnetic material, a A current of clean intensity to heat this material so as to disorganize its magnetization, the direction of this current being chosen to program the magnetization of the material of the storage layer (41) in a desired orientation.
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    FR2914482A1|2007-03-29|2008-10-03|Commissariat Energie Atomique|MAGNETIC MEMORY WITH MAGNETIC TUNNEL JUNCTION|
    FR2924851A1|2007-12-05|2009-06-12|Commissariat Energie Atomique|MAGNETIC ELEMENT WITH THERMALLY ASSISTED WRITING.|
    EP2278589A1|2009-07-14|2011-01-26|Crocus Technology|Magnetic element with a fast spin transfer torque writing procedure|
    FR2963152A1|2010-07-26|2012-01-27|Centre Nat Rech Scient|MEMORY MEMORY MEMORY|
    US20140010004A1|2011-03-22|2014-01-09|Renesas Electronics Corporation|Magnetic memory|
    FR2976113A1|2011-06-06|2012-12-07|Commissariat Energie Atomique|MAGNETIC DEVICE WITH COUPLING EXCHANGE|US10833249B2|2017-09-18|2020-11-10|Centre National De La Recherche Scientifique|Magnetic memory cell of current programming type|FR1550273A|1966-10-26|1968-12-20|
    US5532643A|1995-06-23|1996-07-02|Motorola, Inc.|Manufacturably improved asymmetric stripline enhanced aperture coupler|
    GB9908179D0|1999-04-09|1999-06-02|Univ Cambridge Tech|Magnetic materials|
    US6538921B2|2000-08-17|2003-03-25|Nve Corporation|Circuit selection of magnetic memory cells and related cell structures|
    FR2829868A1|2001-09-20|2003-03-21|Centre Nat Rech Scient|Magnetic memory with spin-polarized current writing for storage and reading of data in electronic systems includes a free magnetic layer made from an amorphous or nanocrystalline alloy of a rare earth and a transition metal|
    FR2829867B1|2001-09-20|2003-12-19|Centre Nat Rech Scient|MAGNETIC MEMORY HAVING SELECTION BY WRITING BY INHIBITION AND METHOD FOR WRITING SAME|
    US6798691B1|2002-03-07|2004-09-28|Silicon Magnetic Systems|Asymmetric dot shape for increasing select-unselect margin in MRAM devices|
    JP3769241B2|2002-03-29|2006-04-19|株式会社東芝|Magnetoresistive element and magnetic memory|
    US7189583B2|2003-07-02|2007-03-13|Micron Technology, Inc.|Method for production of MRAM elements|
    US6833573B1|2003-07-18|2004-12-21|International Business Machines Corporation|Curvature anisotropy in magnetic bits for a magnetic random access memory|
    FR2866750B1|2004-02-23|2006-04-21|Centre Nat Rech Scient|MAGNETIC MEMORY MEMORY WITH MAGNETIC TUNNEL JUNCTION AND METHOD FOR ITS WRITING|
    JP4337641B2|2004-06-10|2009-09-30|ソニー株式会社|Nonvolatile magnetic memory device and photomask|
    US7355884B2|2004-10-08|2008-04-08|Kabushiki Kaisha Toshiba|Magnetoresistive element|
    US7545602B1|2005-07-26|2009-06-09|Sun Microsystems, Inc.|Use of grating structures to control asymmetry in a magnetic sensor|
    US8004374B2|2005-12-14|2011-08-23|Hitachi Global Storage Technologies Netherlands B.V.|Increased anisotropy induced by direct ion etch for telecommunications/electronics devices|
    FR2904724B1|2006-08-03|2011-03-04|Commissariat Energie Atomique|MAGNETIC DEVICE IN THIN LAYERS WITH HIGH PERPENDICULAR SPIN POLARIZATION IN THE LAYER PLAN, MAGNETIC TUNNEL JUNCTION AND SPIN VALVE USING SUCH A DEVICE|
    TWI449040B|2006-10-06|2014-08-11|Crocus Technology Sa|System and method for providing content-addressable magnetoresistive random access memory cells|
    JP2008098523A|2006-10-13|2008-04-24|Toshiba Corp|Magneto-resistance effect element, and magnetic memory|
    KR100855105B1|2007-06-14|2008-08-29|한국과학기술연구원|Spin transistor using perpendicular magnetization|
    WO2009074411A1|2007-12-13|2009-06-18|Crocus Technology|Magnetic memory with a thermally assisted writing procedure|
    JP2009164390A|2008-01-08|2009-07-23|Renesas Technology Corp|Magnetic recording device|
    FR2929041B1|2008-03-18|2012-11-30|Crocus Technology|MAGNETIC ELEMENT WITH THERMALLY ASSISTED WRITING|
    EP2124228B1|2008-05-20|2014-03-05|Crocus Technology|Magnetic random access memory with an elliptical junction|
    US8031519B2|2008-06-18|2011-10-04|Crocus Technology S.A.|Shared line magnetic random access memory cells|
    KR100982660B1|2008-08-01|2010-09-17|한국과학기술연구원|Magnetic memory device and method for reading magnetic memory cell using spin hall effect|
    US8559214B2|2008-12-25|2013-10-15|Nec Corporation|Magnetic memory device and magnetic random access memory|
    EP2276034B1|2009-07-13|2016-04-27|Crocus Technology S.A.|Self-referenced magnetic random access memory cell|
    FR2955942B1|2010-01-29|2013-01-04|Centre Nat Rech Scient|INTEGRATED MAGNETOMETER AND METHOD FOR MANUFACTURING THE SAME|
    FR2963153B1|2010-07-26|2013-04-26|Centre Nat Rech Scient|INDEXABLE MAGNETIC ELEMENT|
    JP5565238B2|2010-09-24|2014-08-06|Ｔｄｋ株式会社|Magnetic sensor and magnetic head|
    FR2966636B1|2010-10-26|2012-12-14|Centre Nat Rech Scient|INDEXABLE MAGNETIC ELEMENT|
    US8198919B1|2011-02-23|2012-06-12|The Regengs of the University of California|Spin transfer torque triad for non-volatile logic gates|
    JP5736836B2|2011-02-23|2015-06-17|Tdk株式会社|Spin conduction type magnetic sensor|
    JP2013232497A|2012-04-27|2013-11-14|Renesas Electronics Corp|Magnetic material device and manufacturing method thereof|
    KR101958420B1|2012-06-21|2019-03-14|삼성전자 주식회사|Magnetic memory device and method of operating the same|
    US9076537B2|2012-08-26|2015-07-07|Samsung Electronics Co., Ltd.|Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction|
    JP5645181B2|2012-11-08|2014-12-24|独立行政法人科学技術振興機構|Spin valve element|
    WO2014089182A1|2012-12-04|2014-06-12|Carnegie Mellon University|A nonvolatile magnetic logic device|
    US9524767B2|2013-06-21|2016-12-20|Carnegie Mellon University|Bitcell wth magnetic switching elements|
    EP3016287B1|2014-11-03|2017-04-26|IMEC vzw|A spin torque majority gate device|
    US9379162B2|2014-11-18|2016-06-28|Virginia Commonwealth University|Magneto-elastic non-volatile multiferroic logic and memory with ultralow energy dissipation|FR3042634B1|2015-10-16|2017-12-15|Centre Nat Rech Scient|MAGNETIC MEMORY POINT|
    US10418545B2|2016-07-29|2019-09-17|Tdk Corporation|Spin current magnetization reversal element, element assembly, and method for producing spin current magnetization reversal element|
    WO2021140934A1|2020-01-10|2021-07-15|国立大学法人東北大学|Magnetic laminated film, magnetic memory element, magnetic memory, and artificial intelligence system|
    US20210234090A1|2020-01-23|2021-07-29|Everspin Technologies, Inc.|Magnetoresistive devices and methods therefor|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1550273|2015-01-14|
    FR1550273A|FR3031622B1|2015-01-14|2015-01-14|MAGNETIC MEMORY POINT|FR1550273A| FR3031622B1|2015-01-14|2015-01-14|MAGNETIC MEMORY POINT|
    US15/540,159| US10224085B2|2015-01-14|2016-01-13|Magnetic memory cell with asymmetrical geometry programmable by application of current in the absence of a magnetic field|
    EP16702188.0A| EP3245653B1|2015-01-14|2016-01-13|Magnetic memory slot|
    JP2017537349A| JP6751397B2|2015-01-14|2016-01-13|Magnetic memory slot|
    PCT/FR2016/050058| WO2016113503A1|2015-01-14|2016-01-13|Magnetic memory slot|
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