• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    An optoelectronic device (40) includes a substrate (42) having opposing first and second faces (44,46), side electrical insulation elements (48) extending from the first face (46) to the second face (44) and delimiting in the support of the first semiconductor or conductive portions (50) electrically insulated from each other. The optoelectronic device further comprises, for each first portion, a first conductive pad (52) on the second face in contact with the first portion and a set (D) of light-emitting diodes resting on the first face and electrically connected to the first portion, the optoelectronic device further comprising a conductive and at least partially transparent electrode layer (66) covering all the light-emitting diodes, an insulating and at least partially transparent encapsulating layer (70) covering the electrode layer and at least one second conductive pad (52) electrically connected to the electrode layer.
    公开号:FR3031238A1
    申请号:FR1463420
    申请日:2014-12-30
    公开日:2016-07-01
    发明作者:Xavier Hugon
    申请人:Aledia；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The present application relates to an optoelectronic device with light-emitting diodes, in particular light-emitting diodes made of inorganic materials, for example a display screen or an image projection device. BACKGROUND ART There are optoelectronic devices, in particular display screens or projection devices, comprising light-emitting diodes based on semiconductor materials comprising a stack of semiconductor layers comprising mainly at least one element of group III and a Group V element, hereinafter called III-V compound, in particular gallium nitride (GaN), gallium indium nitride (GaInN) and gallium aluminum nitride (GaAlN). A pixel of an image corresponds to the unitary element of the image displayed by a display screen or projected by a projection device. When the optoelectronic device is a monochrome image display screen or a monochrome image projection device, it generally comprises a single light source for displaying each pixel of the image. When the optoelectronic device is a color image display screen or a color image projection device, it generally comprises for the display of each image pixel at least three components of the image display device 3031238 B13650 - LED Screen 2 emission and / or regulation of light intensity, also called sub-display pixels, which each emit light radiation substantially in a single color (e.g., red, green and blue). The superposition of the radiation emitted by these three sub-display pixels provides the observer with the color sensation corresponding to the pixel of the displayed image. In this case, the display pixel or the projection device is the display pixel formed by the three display subpixels used for the display of an image pixel. FIG. 1 represents an example of an optoelectronic device 10 with inorganic light-emitting diodes, such as a display screen or a projection device. The optoelectronic device 10 comprises successively from bottom to top in FIG. 1: a support 12; lower electrodes 14, corresponding for example to parallel conductive strips; Inorganic light-emitting diodes 16 resting on the lower electrodes 14 and separated from each other by insulating portions 18; transparent upper electrodes 20 in contact with the upper faces of the organic electroluminescent diodes 16; and a transparent protective layer 22 covering the entire structure. Phosphor layers and / or color filters may be provided on the protective layer 22. Each inorganic light-emitting diode 16 comprises a stack of semiconductor portions comprising successively from bottom to top in FIG. 1: a doped semiconductor portion 24 a first type of conductivity, for example N type, in contact with one of the electrodes 14; An active zone 26, that is to say the zone of the light-emitting diode emitting the majority of the light radiation supplied by the operating light-emitting diode, corresponding to a monolayer or multilayer structure comprising, for example, an undoped semiconductor portion, a single quantum well or multiple quantum wells; and a doped semiconductor portion 28 of a second conductivity type, opposite the first type of conductivity, for example of the P type, in contact with one of the electrodes 20.
    [0002] Such light-emitting diodes 16 are said to be two-dimensional insofar as they are formed of a stack of thin and flat layers. Each display subpixel P of the optoelectronic device 10 comprises a light-emitting diode 16, an insulating portion 18 surrounding the light-emitting diode 16 and portions of one of the electrodes 14 and one of the electrodes 20 in contact with the diode By way of example, the area occupied by each display subpixel P may correspond to a square whose side is between 100 and 1 mm.
    [0003] FIGS. 2A to 2C show the structures obtained at successive stages of an exemplary method of manufacturing the optoelectronic device 10. FIG. 2A represents the structure obtained after forming the lower electrodes 14 on the support 12 and after having deposited on the entire structure a stack 30 of successive semiconductor layers 32, 34, 36. Figure 2B shows the structure obtained after etching openings 38 in the stack 30 to define the semiconductor portions 24, 26, 28 for each diode 16. Figure 2C shows the structure obtained after forming the insulating portions 18 in the openings 38 between the light-emitting diodes 16. This can be achieved by depositing an insulating layer on the entire structure shown in FIG. 2B. insulating layer covering the diodes 3031238 B13650 - LED Screen 4 electroluminescent 16 and re The maximum light intensity that can be emitted by each display subpixel P depends on the area occupied by the light-emitting diode 16, by muting the apertures 38 and etching the insulating layer until reaching the portions 28 of the light-emitting diodes 16. relative to the surface of the display subpixel P and can not be greater than the total area of the display subpixel. The minimum distance between two adjacent LEDs 16 is imposed by the method of etching layers 32, 34, 36 and the insulating portion forming process 18 and is generally greater than 3 pin, or even 5 pin. This reduces the maximum area that can be occupied by each light-emitting diode 16. The lower electrodes 14 can be made by a continuous electrode layer. However, the electrode layer 14 has the drawbacks of being resistive and of conducting light. The resistivity of the lower electrode layer 14 greatly limits the maximum size of the optoelectronic device since the voltage drop between the edge and the center can quickly exceed the correction capabilities of the electronic control system. The conduction of the light has the effect of reinjecting a portion of the light emitted by a sub-pixel in the neighboring sub-pixels strongly limiting the contrast and color saturation of the optoelectronic device. When the lower electrodes 14 are made by separate bands, the necessary distance between sub-pixels is even greater. Another disadvantage of the manufacturing method described above is that the etching steps of the layers 32, 34, 36 can cause a deterioration of the lateral flanks of the active zone 26 of each light-emitting diode 16 and disturb the light radiation emitted by the active zone 26 so that it is difficult to make sub-pixels smaller than 15 fun by 15 fun and of good quality.
    [0004] SUMMARY One object of an embodiment is to overcome all or some of the disadvantages of the inorganic light emitting diode optoelectronic devices described above, in particular display screens or projection devices. SUMMARY OF THE INVENTION Another object of an embodiment is to increase the maximum light intensity that can be provided by each display subpixel. Another object of an embodiment is that the light-emitting diode manufacturing method does not include a step of etching the active layers of the light-emitting diodes. Thus, an embodiment provides an optoelectronic device comprising a substrate comprising first and second opposing faces, lateral electrical insulating elements extending from the first face to the second face and delimiting in the support of the first semiconductor portions or conductive electrically insulated from each other, the optoelectronic device further comprising, for each first portion, a first conductive pad on the second face in contact with the first portion and a light emitting diode or a set of light-emitting diodes resting on the first electrically connected to the first portion, the optoelectronic device further comprising a conductive and at least partially transparent conductive electrode layer covering all the light-emitting diodes, an insulating and at least partially transparent encapsulating layer covering the electrode layer, and at least one second conductive pad electrically connected to the electrode layer.
    [0005] According to one embodiment, each electroluminescent diode comprises at least one wired, conical or frustoconical semiconductor element, integrating or covered at the top and / or at least on a part of its lateral faces by a shell comprising at least one active layer. adapted to provide the majority of the radiation of the light emitting diode.
    [0006] According to one embodiment, the optoelectronic device further comprises a conductive layer covering the electrode layer around the light-emitting diodes of each assembly.
    [0007] According to one embodiment, the lateral electrical insulation elements comprise at least one insulating wall extending in the substrate from the first face to the second face. According to one embodiment, the lateral electrical insulation elements delimit, in addition, in the support, a second electrically insulated semiconducting or semiconducting portion of the first semiconductor or conductive portions and electrically connected to the electrode layer. According to one embodiment, the second conductive pad is in electrical contact with the second semiconductor or conductive portion on the side of the second face. According to one embodiment, the second conductive pad is located on the side of the first face. According to one embodiment, the substrate is silicon, germanium, silicon carbide, a compound III-20 V, such as GaN or GaAs, or ZnO. According to one embodiment, the substrate is of monocrystalline silicon and comprises a dopant concentration of between 5 * 1016 atoms / cm3 and 2 * 1020 atoms / cm3. According to one embodiment, each semi-conductive element is predominantly a III-V compound, especially gallium nitride, or a compound II-VI. According to one embodiment, the optoelectronic device comprises lenses on the encapsulation layer.
    [0008] According to one embodiment, the optoelectronic device is a display screen or a projection device. One embodiment also relates to a method of manufacturing an optoelectronic device comprising the following steps: Screen LED 7 a) forming, in a substrate comprising first and second opposite faces, lateral electrical insulation elements; extending from the first face to the second face and delimiting in the support of the first semiconductor portions 5 or conductive electrically insulated from each other and form, for each first portion, a first conductive pad on the second face in contact with the first portion ; b) forming, for each first portion, a light-emitting diode or a set of light-emitting diodes 10 resting on the first face and electrically connected to the first portion; and c) forming, for each first portion, a conductive and at least partially transparent electrode layer covering all the light-emitting diodes, an encapsulation layer 15 of at least partially transparent dielectric material covering the electrode layer, and least a second conductive pad electrically connected to the electrode layer. According to one embodiment, step a) comprises the following 20 steps: before step b), forming, in the substrate, lateral electrical insulation elements extending from the first face over part of the depth substrate; and after step c), thinning the substrate to form the second face and exposing the lateral electrical insulators on the second face. According to one embodiment, the method further comprises depositing phosphors on at least some of the light-emitting diodes, in particular by photolithography or printing techniques. According to one embodiment, each light-emitting diode comprises at least one wired, conical or frustoconical semiconductor element, integrating or covered at the top and / or at least on a portion of its lateral faces by a B13650-LED Screen 8 shell comprising at least an active layer adapted to provide the majority of the radiation of the light emitting diode. BRIEF DESCRIPTION OF THE DRAWINGS These and other features and advantages will be set forth in detail in the following description of particular embodiments in a non-limiting manner with reference to the accompanying drawings, in which: FIG. is a sectional, partial and schematic view of an example of an inorganic light emitting diode optoelectronic device; FIGS. 2A to 2C, previously described, are sectional, partial and schematic views of structures obtained at successive stages of an exemplary method of manufacturing the optoelectronic device of FIG. 1; FIGS. 3A, 3B and 3C are respectively a top view, a sectional front view and a bottom view, partial and schematic, of an embodiment of an optoelectronic light-emitting diode device; FIGS. 4A to 4C are respectively a top view, a front view with sectional view and a bottom view, partial and schematic, of another embodiment of an optoelectronic light-emitting diode device; and FIGS. aA and 5B are respectively a top view and a sectional, partial and schematic front view of another embodiment of an optoelectronic light-emitting diode device. DETAILED DESCRIPTION For the sake of clarity, the same elements have been designated with the same references in the various figures and, in addition, the various figures are not drawn to scale. In addition, only the elements useful for understanding the embodiments have been shown and are described. In particular, the control device of an optoelectronic light-emitting diode device is known to those skilled in the art and is not described hereinafter. In the remainder of the description, except for 3031238 B13650 - LED Screen 9, the terms "substantially", "about" and "of the order of" mean "to within 10%". The embodiments described hereinafter relate to optoelectronic devices, in particular display screens or projection devices, comprising light-emitting diodes formed from three-dimensional semiconductor elements, for example microwires, nanowires, conical elements. or frustoconical elements. In the remainder of the description, embodiments are described for light-emitting diodes formed from microfilts or nanowires. However, these embodiments can be implemented for three-dimensional elements other than microwires or nanowires, for example three-dimensional pyramid-shaped elements.
    [0009] In addition, in the following description, embodiments are described for light-emitting diodes each comprising a shell which at least partially surrounds the microfil or nanowire. However, these embodiments may be implemented for light-emitting diodes 20 for which the active area is located in the height or at the top of the microfilament or nanowire. The term "microfil" or "nanowire" refers to a three-dimensional structure of elongated shape in a preferred direction of which at least two dimensions, called minor dimensions, are between 5 nm and 2.5 μm, preferably between 50 nm and 2, 5 μm, the third dimension, called major dimension, being at least equal to 1 time, preferably at least 5 times and even more preferably at least 10 times, the largest of the minor dimensions. In some embodiments, the minor dimensions may be less than or equal to about 1 μm, preferably between 100 nm and 1 μm, more preferably between 100 nm and 300 nm. In some embodiments, the height of each microfil or nanowire may be greater than or equal to 500 nm, preferably from 1 to 50 gm.
    [0010] In the remainder of the description, the term "wire" is used to mean "microfil or nanowire". Preferably, the mean line of the wire which passes through the centers of the straight sections, in planes perpendicular to the preferred direction of the wire, is substantially rectilinear and is hereinafter referred to as the "axis" of the wire. According to one embodiment, there is provided an optoelectronic device, in particular a display screen or a projection device, comprising an integrated circuit comprising a substrate, for example a conductive or semiconductor substrate, divided into electrically insulated portions of the substrate. each other and comprising, for each display sub-pixel, sets of light-emitting diodes formed on the front face of the substrate. Each set of light-emitting diodes 15 comprises a light-emitting diode or a plurality of light-emitting diodes connected in parallel. By connecting light-emitting diodes in parallel, it is meant that the anodes of the light-emitting diodes are connected together and that the cathodes of the light-emitting diodes are connected together. Each set of elementary light-emitting diodes is equivalent to a global light-emitting diode comprising an anode and a cathode. FIGS. 3A to 3C show an embodiment of an optoelectronic device 40, in particular a display screen or a projection device, comprising: a conductive or semiconductor substrate 42 comprising a lower face 44 and an opposite upper face 46 the upper face 46 being preferably flat at least at the sets of light-emitting diodes; Electrical isolation elements 48 which extend in the substrate 42 between the faces 44 and 46 and which divide the substrate 42 into conductive or semiconducting portions 50; conductive pads 52 in contact with the lower face 44, each portion 50 being in contact with one of the conductive pads 52; B13650 - LED Screen 11 - germination pads 54 promoting the growth of threads, each seed pad 54 being in contact with the face 46 on one of the conductive or semiconducting portions 50; wires 56, each wire 56 being in contact with one of the seed pads 54, each wire 56 comprising a lower portion 58, in contact with the seed pad 54 and an upper portion 60, extending the lower portion 58 ; an insulating layer 62 extending on the face 46 of the substrate 42 and extending on the lateral flanks of the lower portion 58 of each wire 56; a shell 64 comprising a stack of semiconductor layers covering the upper portion 60 of each wire 56; a conductive and at least partially transparent layer 66 forming an electrode covering each shell 64, and extending on the insulating layer 62 between the wires 56; a conductive layer 68 covering the electrode layer 66 between the wires 56 but not extending over the wires 56, the conductive layer 68 being, in addition, in contact with one of the semiconductor portions 50 through an opening 69 provided in the electrode layer 66 and in the insulating layer 62; and a transparent encapsulation layer covering the whole of the structure.
    [0011] The optoelectronic device 40 may further comprise a phosphor layer, not shown, and / or colored filters, not shown, in the encapsulation layer 70 or the encapsulation layer 70. According to one embodiment phosphors are especially distributed between the wires 56. Each wire 56 and the associated shell 64 constitute an elementary light-emitting diode. The elementary light-emitting diodes located on the same semiconducting portion 50 form a set D of light-emitting diodes. Each set D thus comprises a plurality of elementary electroluminescent diodes 3031238 B13650 - LED Screen 12 connected in parallel. The number of elementary light-emitting diodes per set D can vary from 1 to several thousand, typically from 25 to 100. The number of elementary light-emitting diodes per set D can vary from one set to another. Each pixel display pixel Pix of the optoelectronic device 40 comprises one of the conductive or semiconducting portions 50 and the set D of light-emitting diodes resting on this portion 50. In FIG. 3A, there is shown diagrammatically the separation between the pixel display subpixels with dashed lines 72. According to one embodiment, the area occupied by each pixel Pix in a view from above can vary from 3 fun per 3 fun to several mm 2 and typically 10 at 100 pm2.
    [0012] Each elemental light-emitting diode is formed of a shell at least partially covering a wire. The developed surface of the active layers of the elementary light-emitting diodes of a set D is greater than the surface of the display sub-pixel comprising this set D. The maximum light intensity that can be supplied by the display sub-pixel can therefore be greater than that of a display subpixel made with a two-dimensional inorganic light emitting diode technology. According to one embodiment, the substrate 42 corresponds to a monolithic semiconductor substrate. The semiconductor substrate 42 is, for example, a substrate made of silicon, germanium, or a III-V compound such as GaAs. Preferably, the substrate 42 is a monocrystalline silicon substrate. Preferably, the semiconductor substrate 42 is doped so as to lower the electrical resistivity to a resistivity close to that of the metals, preferably less than a few mohm.cm. The substrate 42 is preferably a highly doped semiconductor substrate with a dopant concentration of between 5 * 1016 atoms / cm3 and 2 * 1020 atoms / cm3, preferably between 1 * 1019 atoms / cm3 and 2 * 1020 atoms / cm3. by 3031238 B13650 - LED Screen 13 example 5 * 1019 atoms / cm3. At the beginning of the manufacturing process of the optoelectronic device, the substrate 42 has a thickness of between 275 and 1500 gm, preferably 725 gm. Once the optoelectronic device is made, after a thinning step described in more detail later, the substrate 42 has a thickness between 1 fun and 100 pin. In the case of a silicon substrate 42, examples of P type dopants are boron (B) or indium (In) and examples of N type dopants are phosphorus (P), arsenic ( As), or antimony (Sb). Preferably, the substrate 42 is doped N-type phosphorus. The face 44 of the silicon substrate 42 may be a face (100). The germination pads 54, also called germination islands, are made of a material that promotes the growth of the yarns 56. A treatment can be provided to protect the lateral flanks of the seedlings and the surface of the parts of the substrate not covered by the blocks. of germination to prevent the growth of the son on the lateral flanks of the seed pads and on the surface of the parts of the substrate not covered by the seed pads. The treatment may include forming a dielectric region on the lateral flanks of the seed pads and extending on and / or in the substrate and connecting, for each pair of pads, one of the pads of the pair to the pair. other stud of the pair, the wires not growing on the dielectric region. Said dielectric region may overflow over the seed pads 54. Alternatively, the seed pads 54 may be replaced by a seed layer covering the face 46 of the substrate 42. A dielectric region may then be formed. above the seed layer to prevent the growth of threads in unwanted locations. By way of example, the material constituting the seed pads 54 may be a transition metal of column IV, V or VI of the periodic table of the elements or a nitride, a carbide or a boride of a transition metal of the column IV, V 3031238 B13650 - LED Screen 14 or VI of the periodic table of the elements or a combination of these compounds. By way of example, the seed pads 54 may be made of aluminum nitride (AlN), boron (B), boron nitride (BN), titanium (Ti) or titanium nitride (TiN). tantalum nitride (TaN), hafnium (Hf), hafnium nitride (HfN), niobium (Nb), niobium nitride (NbN), zirconium (Zr), tantalum nitride (TaN), of zirconium borate (ZrB 2), zirconium nitride (ZrN), silicon carbide (SiC), nitride and tantalum carbide (TaCN), magnesium nitride in the form MgxNy, where x is about equal to 3 and y is approximately equal to 2, for example magnesium nitride according to the form Mg3N2 or gallium and magnesium nitride (MgGaN), tungsten (W), tungsten nitride (WN) or a combination of those -this.
    [0013] The insulating layer 62 may be of a dielectric material, for example silicon oxide (SiO2), silicon nitride (SixNy, where x is about 3 and y is about 4, for example Si3N4), silicon oxynitride (SiOxNy where x may be about 1/2 and y may be about 20 1, eg Si2ON2), aluminum oxide (Al2O3), hafnium oxide (HfO2), or in diamond. For example, the thickness of the insulating layer 62 is between 5 nm and 800 nm, for example equal to about 30 nm. The wires 56 are at least partly formed from at least one semiconductor material. The semiconductor material may be silicon, germanium, silicon carbide, a III-V compound, a II-VI compound or a combination thereof. The wires 56 may be at least partly formed from semiconductor materials predominantly comprising a III-V compound, for example III-N compounds. Examples of group III elements include gallium (Ga), indium (In) or aluminum (Al). Examples of III-N compounds are GaN, AlN, InN, InGaN, AlGaN or AlInGaN. Other Group V elements may also be used, for example, phosphorus or arsenic. In general, the elements in compound III-V can be combined with different mole fractions. The wires 56 may be at least partly formed from semiconductor materials predominantly comprising II-VI. Examples of group II elements include elements of the HA group, notably beryllium (Be) and magnesium (Mg) and elements of group IIB, in particular zinc (Zn) and cadmium (Cd). Examples of group VI elements include elements of the VIA group, including oxygen (O) and tellurium (Te). Examples of compounds II-VI are ZnO, ZhMg0, CdZnO or CdZnMgO. In general, the elements in II-VI can be combined with different mole fractions. The wires 56 may comprise a dopant. By way of example, for III-V compounds, the dopant may be selected from the group consisting of a Group II P-dopant, for example magnesium (Mg), zinc (Zn), cadmium ( Cd) or mercury (Hg), a group IV P type dopant, for example carbon (C) or a group IV N dopant, for example silicon (Si), germanium (Ge), selenium (Se), sulfur (S), terbium (Tb) or tin (Sn). The cross section of the yarns 56 may have different shapes, such as, for example, an oval, circular or polygonal shape, in particular triangular, rectangular, square or hexagonal. By way of example, in FIG. 3A, the wires are represented with a hexagonal cross-section. Thus, it is understood that when the "diameter" in a cross-section of a wire or a layer deposited on this wire is mentioned here, it is a quantity associated with the surface of the structure referred to in this section. Cross section, corresponding, for example, to the diameter of the disc having the same area as the cross section of the wire. The average diameter of each wire 56 can be between 50 nm and 5 pin. The height of each wire 56 can be between 250 nm and 50 pin. Each wire 56 may have an elongate semiconductor structure 35 along an axis substantially perpendicular to the face 46. Each wire may have a generally cylindrical shape. The axes of two adjacent wires 56 may be 0.5 to 10 fun and preferably 1.5 to 5 gm apart. By way of example, the wires 56 may be regularly distributed, in particular along a hexagonal network.
    [0014] By way of example, the lower portion 58 of each wire 56 consists for the most part of compound III-N, for example doped gallium nitride of the same type as substrate 42, for example N-type, for example silicon. . The lower portion 58 extends over a height that can be between 100 nm and 25 gm. By way of example, the upper portion 60 of each wire 56 is at least partially made of a III-N compound, for example GaN. The upper portion 60 may be N-doped, possibly less heavily doped than the lower portion 58, or may not be intentionally doped. The upper portion 60 extends over a height that can be between 100 nm and 25 gm. The shell 64 may comprise a multilayer stack comprising in particular: - an active layer covering the upper portion 60 of the associated wire 56; an intermediate layer of conductivity type opposite to the lower portion 58 and covering the active layer; and a bonding layer covering the intermediate layer and covered by the electrode 66. The active layer is the layer from which the majority of the radiation provided by the elementary light emitting diode is emitted. In one example, the active layer may include means for confining the charge carriers, such as multiple quantum wells. It consists, for example, of an alternation of GaN and InGaN layers having respective thicknesses of 5 to 20 nm (for example 8 nm) and 1 to 15 nm (for example 2.5 nm). The GaN layers may be doped, for example of the N or P type. According to another example, the active layer may comprise a single layer of InGaN, for example with a thickness greater than 10 nm. The intermediate layer, for example doped P-type, may correspond to a semiconductor layer or a stack of semiconductor layers and allows the formation of a PN or PIN junction, the active layer being between the intermediate layer of type P and the upper N-type portion 60 of the PN or PIN junction. The bonding layer may correspond to a semiconductor layer or a stack of semiconductor layers and allows the formation of an ohmic contact between the intermediate layer and the electrode 66. By way of example, the bonding layer may be doped very strongly of the type opposite to the lower portion 58 of each wire 56, until degenerate the semiconductor layer or layers, for example doped P type at a concentration greater than or equal to 1020 atoms / cm3. The semiconductor layer stack may comprise an electron blocking layer formed of a ternary alloy, for example gallium aluminum nitride (A1GaN) or indium aluminum nitride (.AlInN). in contact with the active layer and the intermediate layer, to ensure a good distribution of the electric carriers in the active layer. The electrode 66 is adapted to polarize the active layer of each wire 56 and to allow the electromagnetic radiation emitted by the light-emitting diodes to pass. The material forming the electrode 66 may be a transparent and conductive material such as indium tin oxide (ITO), zinc oxide doped with aluminum, gallium or indium, or graphene. By way of example, the electrode layer 66 has a thickness of between 5 nm and 200 nm, preferably between 20 nm and 50 nm. The conductive layer 68 preferably corresponds to a metal layer, for example aluminum, copper, gold, ruthenium or silver, or to a stack of metal layers, for example titanium-aluminum, silicon-aluminum , made of titanium- 3031238 B13650 - LED Screen 18 nickel-silver, copper or zinc. By way of example, the conductive layer 68 has a thickness of between 20 nm and 1500 nm, preferably between 400 nm and 800 nm. The conductive layer 68 is present only between the wires and does not cover the emissive surface thereof. The conductive layer 68 makes it possible to reduce the resistive losses during the flow of the current. It also has a reflector role to send out the rays emitted by the light-emitting diodes in the direction of the substrate.
    [0015] The encapsulation layer 70 is made of at least partially transparent insulating material. The minimum thickness of the encapsulation layer 70 is between 250 nm and 50 μm so that the encapsulation layer 70 completely covers the electrode layer 66 at the top of the sets D of light-emitting diodes. The encapsulation layer 70 may be made of at least partially transparent inorganic material. For example, the inorganic material is selected from the group consisting of silicon oxides of the SiOx type where x is a real number between 1 and 2 or SiOyNz where y and z are real numbers between 0 and 1 and aluminum oxides, for example A1203. The encapsulation layer 70 may be made of at least partially transparent organic material. For example, the encapsulation layer 70 is a silicone polymer, an epoxy polymer, an acrylic polymer, or a polycarbonate. The electrical insulating elements 48 may comprise trenches extending over the entire thickness of the substrate 42 and filled with an insulating material, for example an oxide, especially silicon oxide, or an insulating polymer.
    [0016] Alternatively, the walls of each trench 48 are covered with an insulating layer, the remainder of the trench being filled with a semiconductor or conductive material, for example silicon. Polycrystalline. According to another variant, the electrical insulating elements 48 comprise doped regions of a type of polarity opposite the substrate 42 and extending over the entire depth of the substrate 42. By way of example each trench 48 has a width greater than 1 pin, which varies in particular from 1 μm to 10 μm, for example about 2 μm. The distance between the two trenches 48 of a pair of adjacent trenches 48 is greater than 5 gm, for example about 6 gm. In FIGS. 3B and 3C, the electrical insulation elements 48 comprise pairs of adjacent trenches 48 which delimit the portions 50 of the substrate 42. By way of example, a single trench 48 may be provided to electrically isolate each portion 50.
    [0017] In general, such fine trenches can only be made with a limited depth, between about ten micrometers and one hundred micrometers depending on the etching and insulation technique chosen. It is therefore necessary to thin the substrate 42 until the electrical insulation elements 48 are flush with one another. To do this, a handle made of a rigid material can be fixed temporarily or permanently to the encapsulation layer 70. the case where the handle is permanently attached to the encapsulation layer 70, the handle is at least partially transparent material. It may be glass, especially a borosilicate glass, for example glass known under the name pyrex, or sapphire. After thinning the rear face 44 of the substrate can be treated, and if the gluing is temporary, the handle can be peeled off.
    [0018] Each conductive pad 52 may correspond to a layer or a stack of layers covering the face 44. As a variant, an insulating layer may partially cover the face 44, each conductive pad 52 being in contact with the semiconductive portion 50 associated with the through etched openings in this insulating layer. In the present embodiment, the optoelectronic device 40 is fixed to another circuit by fusible conductor elements, not shown, for example solder balls or indium balls fixed to the conductive pads 52.
    [0019] The assembly of the optoelectronic device 40 on another circuit, in particular on a control circuit, is carried out by means of conventional techniques of matrix hybridization, by means of fusible balls, for example indium, or SnAg, or copper columns or gold studs (Stud Bump technology) or 5 conductive molecular bonding (copper on copper). The metal stack forming the conductive pads 52 is chosen to be compatible with the chosen assembly technology. For example, conductive pads 52 may be Cu or Ti-Ni-Au, Sn-Ag or Ni-Pd-Au.
    [0020] The active layer of the shell 64 of the elementary light-emitting diodes of at least one of the sets of light-emitting diodes D may be manufactured in a different way from the active layer of the shell of the elementary light-emitting diodes of at least one other set of electroluminescent diodes. 15 light-emitting diodes. For example, the active layer of the shell 64 of a first set may be adapted to emit light at a first wavelength, for example a blue light, and the active layer of the shell 64 of a second set may be adapted to emit light at a second wavelength different from the first wavelength, for example a green light. This can be achieved, for example, by adapting in each set the pitch and size of the son, which has the effect of modifying the thickness and the composition of the quantum wells composing these active layers.
    [0021] In addition, a third set may be adapted to emit light at a third wavelength different from the first and second wavelengths, for example a red light. Thus the composition of the blue, green, and red lights can be chosen so that an observer perceives a white light by color composition, each diode, or set of diodes, emitting at a first, second, and third wavelength be addressed independently of others in order to adjust the color. In another embodiment, a phosphor is deposited between and on light emitting diodes of a pixel. The phosphor can absorb the deep blue light emitted by the light-emitting diodes and transform it into green or red, or even blue. The advantage of using a blue phosphor and not the natural emission of the light-emitting diodes is an insensitivity of the quality of the blue to the color variations of the spontaneous emission of the wires, from one batch to another or within of the same substrate. One method of selective phosphor deposition is to mix the phosphor grains of a first color with the photosensitive silicone resin and then after spreading over the entire substrate and light-emitting diodes, to fix phosphors on the sub-pixels. wanted by photolithography. The operation is repeated with a second phosphor and as many times as there are subpixels of different colors.
    [0022] Another method is to use inkjet type printing equipment with an "ink" composed of the silicone-phosphor blend and specific additives. By printing, from mapping and orientation and subpixel referencing, the phosphors are deposited at the required locations. Lenses may be provided on the encapsulation layer 70. For example, a lens may be provided for each subpixel or sets of subpixels.
    [0023] In the embodiment described above, the insulating layer 62 covers the entire periphery of the lower portion 58 of each wire 56. Alternatively, a portion of the lower portion 58, or even the whole of the lower portion 58, may not be covered by the insulating layer 62. In this case, the shell 64 may cover each wire 56 over a height greater than the height of the upper portion 60, or over the entire height of the wire 56. in the embodiment described above, the insulating layer 62 does not cover the periphery of the upper portion 60 of each wire 56. Alternatively, the insulating layer 62 may cover a portion of the wire 60. upper portion 60 of each wire 56. In addition, according to another variant, the insulating layer 62 may, for each wire 56, partially cover the lower portion of the shell 64. According to another embodiment, the or 62 may not be present, especially in the case where the seed pads 54 are replaced by a seed layer covered with a dielectric layer and the son are formed on the seed layer in openings provided in the layer dielectric.
    [0024] The optoelectronic device 40 may be attached to another integrated circuit, in particular a control circuit, comprising electronic components, in particular transistors, used for controlling the light-emitting diode assemblies of the optoelectronic device 40.
    [0025] In operation, the conductive pads 52 electrically connected to the conductive layer 68 may be connected to a source of a first reference potential. The conductive pad 52 in contact with the portion 50 of the substrate 42 on which the elementary light-emitting diodes of a set D of 20 light-emitting diodes to be activated can be connected to a source of a second reference potential so as to circulate a current through the elementary light emitting diodes of the set D considered. Since each conductive pad 52 can extend over a large portion of the associated portion 50, a homogeneous distribution of the current can be obtained. In FIGS. 3A-3C, the conductive layer 68 is shown in contact with portions 50 along one side of the optoelectronic device 40. Alternatively, the conductive layer 68 may be in contact with portions 50 of all 30 the periphery of the optoelectronic device 40. According to one embodiment, the optoelectronic device 40 is at least partly made according to the method described in the patent application FR13 / 59413 which is considered to be an integral part of the present description.
    [0026] One embodiment of a method of manufacturing the optoelectronic device 40 may comprise the following steps: (1) etching, for each electrical isolation element 48, an opening in the substrate 42 of the the front face 46. The opening may be formed by a reactive ion etching type etching, for example a DRIE etching. The depth of the opening is strictly greater than the targeted thickness of the substrate 42 after a thinning step described below. By way of example, the depth of the opening is between 10 μm and 200 μm, for example about 35 μm or 60 μm. (2) Formation of an insulating layer, for example silicon oxide, on the side walls of the opening, for example by a thermal oxidation process. The thickness of the insulating layer may be between 100 nm and 3000 nm, for example about 200 nm. (3) Filling the opening with a filler material, for example polycrystalline silicon, tungsten or a refractory metal material compatible with the steps of the manufacturing process carried out at elevated temperatures, deposited for example by chemical vapor deposition Low Pressure Chemical (LPCVD). The polycrystalline silicon advantageously has a coefficient of thermal expansion close to silicon and thus makes it possible to reduce the mechanical stresses during the steps of the manufacturing process carried out at high temperatures. (4) Mechano-chemical polishing (CMP) to find the silicon surface and eliminate any relief. (5) Formation of seed portions 54, yarns 56, insulating layer 62 and shells 64, by epitaxial growth, as described in patent applications WO2014 / 044960 and FR13 / 59413 which are considered as integral part of this description.
    [0027] 3031238 B13650 - LED Screen 24 (6) Formation of the electrode 66 over the entire structure, for example by chemical vapor deposition (CVD) type deposition, in particular atomic layer deposition (ALD, English acronym for Atomic Layer Deposition), or Physical Vapor Deposition (PVD). (7) Formation of the opening 69 through the insulating layer 62 and the electrode layer 66. (8) Formation of the conductive layer 68, for example 10 by PVD over the entire structure obtained at the step (7) and etching of this layer to expose the portion of the electrode layer 66 covering each wire 56. (9) Thermal annealing treatment of the contacts following the stacking of the layer 68. (10) Deposit of the encapsulation layer 70 over the entire structure obtained in step (8). (11) Thinning of the substrate 42 until reaching the elements 48 of lateral insulation. (12) Formation of conductive pads 52.
    [0028] The active zone of each elemental light-emitting diode is formed by epitaxial growth steps on a portion of the wire 56. The manufacturing method of the optoelectronic device 40 therefore does not include etching steps liable to damage the active zones of the diodes. 25 electroluminescent. Advantageously, the delimitation of the pixels Pix display subpixels is performed only by the electrical insulation elements 48 and does not lead to changes in the manufacturing steps of the elementary light emitting diodes. According to one embodiment, the elementary light-emitting diodes may be uniformly distributed on the face 46 of the substrate 42. Even if elementary light-emitting diodes may be in line with electrical insulation elements 48 and not be functional, this has the advantage that the steps of making the elementary light emitting diodes are identical regardless of the shape of the display subpixels. In the embodiments shown in FIGS. 3A to 3C, the optoelectronic device 40 is electrically connected to an external circuit by solder balls provided on the lower face 44 side of the substrate 42. However, other modes of connection electric can be considered. In the embodiments described above, the substrate 42 is a substrate made of a semiconductor or conductive material. According to another embodiment, the substrate 42 is wholly or partly made of an insulating material, for example silicon dioxide (SiO 2) or sapphire. The electrical connection between the conductive pads 52 and the conductive layer 68 or the seed pads 54 can be achieved by using conductive elements passing through the substrate 42 over its entire thickness, for example via vias or TSV (acronym for Through Silicon Via). FIGS. 4A, 4B and 4C are similar figures respectively to FIGS. 3A, 3B and 3C of another embodiment of an optoelectronic device 80, in particular a display screen or a projection device, in which at least a conductive pad 82 is provided in contact with the conductive layer 68 on the side of the front face 46. The encapsulation layer 70 then comprises an opening 84 which exposes the conductive pad 82. The opening 69 described above is not present. Neither the conductive layer 68 nor the electrode layer 66 are in electrical contact with the semiconductor substrate 42. In addition, there may be no conductive pads 52 in contact with the portions 50 of the semiconductor substrate 42 which are not electrically conductive. electrically connected to elementary light-emitting diodes. The conductive pad 82 is electrically connected to an external circuit, not shown, by a not shown wire. A single conductive pad 82 is shown in FIG. 4A. Alternatively, a plurality of conductive pads 82 may be distributed across the conductive layer 68, for example at the periphery of the optoelectronic device 80. FIGS. 5A and 5B are figures similar to FIGS. 3A and 3B, respectively. another embodiment of an optoelectronic device 90, in particular a display screen or a projection device. The optoelectronic device 90 comprises all the elements of the optoelectronic device 40 and furthermore comprises opaque portions 92 resting on the conductive layer 68 between adjacent display sub-pixels 10, that is to say substantially in the extension of the electrical insulating elements 48. The height of each opaque portion 92 may be greater than or equal to the height of the wires 56. Preferably, the width of each opaque portion 92 is less than or equal to the smallest difference between two elementary light emitting diodes of adjacent D-arrays. By way of example, each opaque portion 82 may be in a resin colored in black. This resin is preferably adapted to absorb electromagnetic radiation over the entire visible spectrum. The presence of the opaque portions 92 advantageously allows the contrast of the optoelectronic device 90 to be increased. Various embodiments with various variants have been described above. It will be appreciated that those skilled in the art can combine various elements of these various embodiments and variants without demonstrating inventive step. By way of example, the structure of the optoelectronic device 90 shown in FIGS. AA and 5B can be implemented with the structure of the optoelectronic device 80 shown in FIGS. 4A, 4B and 4C.
    权利要求:
    Claims (16)
    [0001]
    REVENDICATIONS1. An optoelectronic device (40; 80; 90) comprising a substrate (42) having first and second opposing faces (44,46), lateral electrical insulation elements (48) extending from the first face (46) to the second face (44) and delimiting in the support of the first semiconductor or conductive portions (50) electrically insulated from each other, the optoelectronic device further comprising, for each first portion, a first conductive pad (52) on the second face in contact with the first portion and an electroluminescent diode or a set (D) of light-emitting diodes resting on the first face and electrically connected to the first portion, the optoelectronic device further comprising a conductive electrode layer (66) and at least partially transparent covering all the light-emitting diodes, an encapsulating layer (70) insulating and at least partially transparent e covering the electrode layer, and at least one second conductive pad (52; 82) electrically connected to the electrode layer.
    [0002]
    Optoelectronic device according to claim 1, in which each light-emitting diode comprises at least one wired, conical or frustoconical semiconductor element (56) integrating or covered at the top and / or at least on a part of its lateral faces by a shell ( 64) comprising at least one active layer adapted to provide the majority of the radiation of the light-emitting diode.
    [0003]
    An optoelectronic device according to claim 1 or 2, further comprising a conductive layer (68) covering the electrode layer (66) around the light emitting diodes of each assembly.
    [0004]
    Optoelectronic device according to any one of claims 1 to 3, wherein the elements (48) of lateral electrical insulation comprise at least one insulating wall extending in the substrate (42) of the first face (46) to the second face (44). 3031238 B13650 - LED Screen 28
    [0005]
    Optoelectronic device according to any one of claims 1 to 4, wherein the elements (48) of lateral electrical insulation delimit, in addition, in the support (42), a second semiconductor or conductive portion 5 (50) isolated electrically of the first semiconductor or conductive portions (50) and electrically connected to the electrode layer (66).
    [0006]
    Optoelectronic device according to claim 5, wherein the second conductive pad (52) is in electrical contact with the second semiconductor or conductive portion (50) on the side of the second face (44).
    [0007]
    Optoelectronic device according to any one of claims 1 to 4, wherein the second conductive pad (82) is located on the side of the first face (46). 15
    [0008]
    An optoelectronic device according to any one of claims 1 to 7, wherein the substrate (42) is silicon, germanium, silicon carbide, a III-V compound, such as GaN or GaAs, or in ZnO.
    [0009]
    Optoelectronic device according to claim 8, wherein the substrate (42) is of monocrystalline silicon and comprises a dopant concentration of between 5 * 1016 atoms / cm3 and 2 * 1020 atoms / cm3.
    [0010]
    10. Optoelectronic device according to any one of claims 1 to 9, wherein each semiconductor element (56) is predominantly a compound III-V, in particular gallium nitride, or a compound II-VI.
    [0011]
    Optoelectronic device according to any one of claims 1 to 10, comprising lenses on the encapsulation layer (70). 30
    [0012]
    Optoelectronic device according to any one of claims 1 to 11, wherein the optoelectronic device is a display screen or a projection device.
    [0013]
    13. A method of manufacturing an electronic opto-device (40; 80; 90) comprising the steps of: 3031238 B13650 - LED Screen 29 a) forming in a substrate (42) having opposite first and second faces (44,46); ), elements (48) of lateral electrical insulation extending from the first face (46) to the second face (44) and delimiting in the support of the first 5 semiconductor or conductive portions (50) electrically insulated from each other and forming, for each first portion, a first conductive pad (52) on the second face in contact with the first portion; b) forming, for each first portion, a light-emitting diode or a set (D) of light-emitting diodes resting on the first face and electrically connected to the first portion; and c) forming, for each first portion, a conductive and at least partially transparent electrode layer (66) covering all the light-emitting diodes, an encapsulation layer (70) of at least partially transparent dielectric material covering the electrode layer, and at least one second conductive pad (52; 82) electrically connected to the electrode layer. 20
    [0014]
    The method of claim 13, wherein step a) comprises the steps of: prior to step b) forming, in the substrate (42), elements (48) of lateral electrical insulation extending from the first face (46) on a portion of the depth of the substrate; and after step c), thinning the substrate (42) to form the second face (44) and exposing the lateral electrical insulation elements (48) on the second face.
    [0015]
    15. The method of claim 13 or 14, further comprising depositing phosphors onto at least some of the light emitting diodes, including photolithography or printing techniques.
    [0016]
    16. A method according to any one of claims 13 to 15, wherein each light emitting diode comprises at least one wired, conical or conical frustoconical semiconductor element (56) incorporating or covered at the top and / or least on a portion of its lateral faces by a shell (64) comprising at least one active layer adapted to provide the majority of the radiation of the light emitting diode.
    类似技术:
    公开号 | 公开日 | 专利标题
    FR3031238A1|2016-07-01|OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES
    EP3479408B1|2020-08-05|Optoelectronic device with pixels of improved contrast and brightness
    EP3161865B1|2018-07-25|Optoelectronic device comprising light-emitting diodes on a control circuit
    EP3455882B1|2021-08-11|Method for producing an optoelectronic device comprising a plurality of gallium nitride diodes
    US10388691B2|2019-08-20|Light emitting diodes | with stacked multi-color pixels for displays
    EP3347917B1|2019-10-30|Electroluminescent device with integrated light sensor
    EP3529834B1|2020-09-16|Display device and method for producing such a device
    FR3061608A1|2018-07-06|OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES
    US10923530B2|2021-02-16|Optoelectronic device with light-emitting diodes
    EP3347916B1|2019-08-14|Electroluminescent device with integrated light sensor
    EP3394882B1|2021-08-11|Electronic circuit comprising electrically insulating trenches
    FR3068514B1|2019-08-09|OPTOELECTRONIC DEVICE
    FR3087580A1|2020-04-24|METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE COMPRISING HOMOGENEOUS LIGHT-EMITTING LIGHT-EMITTING DIODES
    EP3895216A1|2021-10-20|Optoelectronic device comprising pixels which emit three colours
    FR3096508A1|2020-11-27|Light-emitting diode optoelectronic device
    EP3750189A1|2020-12-16|Optoelectronic device with electronic components on the rear face of the substrate and method of production
    FR3061607A1|2018-07-06|OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES
    WO2019243733A1|2019-12-26|Optoelectronic device comprising light-emitting diodes
    同族专利:
    公开号 | 公开日
    WO2016108021A1|2016-07-07|
    BR112017012829A2|2018-01-02|
    EP3241245A1|2017-11-08|
    US20170373118A1|2017-12-28|
    JP2018503258A|2018-02-01|
    JP6701205B2|2020-05-27|
    KR20170101923A|2017-09-06|
    CN107112344A|2017-08-29|
    CN107112344B|2021-02-09|
    US10084012B2|2018-09-25|
    FR3031238B1|2016-12-30|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US20070080360A1|2005-10-06|2007-04-12|Url Mirsky|Microelectronic interconnect substrate and packaging techniques|
    US20090261356A1|2008-04-17|2009-10-22|Samsung Electro-Mechanics Co., Ltd.|Sub-Mount, light emitting diode package and manufacturing method thereof|
    US20110012164A1|2009-07-20|2011-01-20|Yu-Sik Kim|Light-emitting element and method of fabricating the same|
    US20120074441A1|2010-09-24|2012-03-29|Seoul Semiconductor Co., Ltd.|Wafer-level light emitting diode package and method of fabricating the same|
    US20120248408A1|2011-03-30|2012-10-04|Paek Ho-Sun|Light-emitting device and method of manufacturing the same|
    WO2014044960A1|2012-09-18|2014-03-27|Aledia|Optoelectronic device having semi-conductive microwires or nanowires and method for producing same|
    WO2014140505A1|2013-03-14|2014-09-18|Commissariat A L'energie Atomique Et Aux Energies Alternatives|Process for forming light-emitting diodes|
    WO2014184487A1|2013-05-14|2014-11-20|Aledia|Optoelectronic device and method for manufacturing same|US20170059110A1|2015-08-07|2017-03-02|Valeo Vision|Lighting and/or signaling device for an automotive vehicle|
    FR3053530A1|2016-06-30|2018-01-05|Aledia|PIXEL OPTOELECTRONIC DEVICE WITH IMPROVED CONTRAST AND LUMINANCE|
    EP3267096A1|2016-07-05|2018-01-10|Valeo Vision|Lighting and/or signalling device for a motor vehicle|
    WO2018234160A1|2017-06-21|2018-12-27|Osram Opto Semiconductors Gmbh|Semiconductor display, optoelectronic semiconductor component and method for producing same|
    WO2020002578A1|2018-06-28|2020-01-02|Aledia|Light emitting device, associated display screen and method for fabricating a light emitting device|
    WO2020002544A1|2018-06-28|2020-01-02|Aledia|Emitting devices, associated display panel and methods for producing an emitting device|
    FR3087580A1|2018-10-23|2020-04-24|Aledia|METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE COMPRISING HOMOGENEOUS LIGHT-EMITTING LIGHT-EMITTING DIODES|
    WO2021009426A1|2019-07-15|2021-01-21|Aledia|Optoelectronic device in which the pixels contain light-emitting diodes that emit several colors and manufacturing method|FR1359413A|1963-04-04|1964-04-24|Shell Int Research|Process for preparing oxygenated organic compounds|
    GB1060051A|1965-01-11|1967-02-22|Rolls Royce|Improvements in or relating to gas turbine engines|
    US8624968B1|2007-04-25|2014-01-07|Stc.Unm|Lens-less digital microscope|
    TW200937574A|2007-09-28|2009-09-01|Toshiba Kk|Semiconductor device and method for manufacturing same|
    DE102008011848A1|2008-02-29|2009-09-03|Osram Opto Semiconductors Gmbh|Optoelectronic semiconductor body and method for producing such|
    EP2297794B1|2008-07-07|2017-09-06|Glo Ab|Nanostructured light emitting diode|
    WO2010022064A1|2008-08-21|2010-02-25|Nanocrystal Corporation|Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques|
    JP4930548B2|2009-06-08|2012-05-16|サンケン電気株式会社|Light emitting device and manufacturing method thereof|
    US8889455B2|2009-12-08|2014-11-18|Zena Technologies, Inc.|Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor|
    KR101192181B1|2010-03-31|2012-10-17|포인트엔지니어링|Optical Element Device and Fabricating Method Thereof|
    DE102010034665A1|2010-08-18|2012-02-23|Osram Opto Semiconductors Gmbh|Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips|US10535709B2|2014-12-30|2020-01-14|Aledia|Optoelectronic device with light-emitting diodes|
    US10170455B2|2015-09-04|2019-01-01|PlayNitride Inc.|Light emitting device with buffer pads|
    FR3061608B1|2016-12-29|2019-05-31|Aledia|OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES|
    DE102017129326A1|2017-12-08|2019-06-13|Osram Opto Semiconductors Gmbh|Method for producing semiconductor light sources and semiconductor light source|
    KR20190118435A|2018-04-10|2019-10-18|삼성전자주식회사|Light emitting diode apparatus and manufacturing method thereof|
    FR3087581B1|2018-10-22|2021-01-15|Aledia|OPTOELECTRONIC DEVICE, ASSOCIATED DISPLAY SCREEN AND METHOD FOR MANUFACTURING SUCH OPTOELECTRONIC DEVICE|
    JP2020166191A|2019-03-29|2020-10-08|株式会社ジャパンディスプレイ|Display device|
    CN109935614B|2019-04-09|2021-10-26|南京大学|Micron full-color QLED array device based on deep silicon etching template quantum dot transfer process and preparation method thereof|
    CN111816729B|2019-04-11|2021-08-31|中国科学院半导体研究所|LED/ZnO nanowire array integrated photoelectric transistor chip and preparation method thereof|
    FR3111236A1|2020-06-03|2021-12-10|Aledia|Electronic device for capturing or transmitting a physical quantity and manufacturing process|
    法律状态:
    2015-12-23| PLFP| Fee payment|Year of fee payment: 2 |
    2016-07-01| PLSC| Publication of the preliminary search report|Effective date: 20160701 |
    2016-12-22| PLFP| Fee payment|Year of fee payment: 3 |
    2017-12-21| PLFP| Fee payment|Year of fee payment: 4 |
    2019-12-17| PLFP| Fee payment|Year of fee payment: 6 |
    2020-12-29| PLFP| Fee payment|Year of fee payment: 7 |
    2021-12-24| PLFP| Fee payment|Year of fee payment: 8 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1463420A|FR3031238B1|2014-12-30|2014-12-30|OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES|FR1463420A| FR3031238B1|2014-12-30|2014-12-30|OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES|
    PCT/FR2015/053754| WO2016108021A1|2014-12-30|2015-12-24|Optoelectronic device with light-emitting diodes|
    JP2017535333A| JP6701205B2|2014-12-30|2015-12-24|Photoelectric device including light emitting diode|
    CN201580071371.1A| CN107112344B|2014-12-30|2015-12-24|Optoelectronic device with light-emitting diodes|
    EP15823720.6A| EP3241245A1|2014-12-30|2015-12-24|Optoelectronic device with light-emitting diodes|
    BR112017012829-2A| BR112017012829A2|2014-12-30|2015-12-24|optoelectronic device with LEDs|
    KR1020177017962A| KR20170101923A|2014-12-30|2015-12-24|Optoelectronic device with light-emitting diodes|
    US15/539,373| US10084012B2|2014-12-30|2015-12-24|Optoelectronic device with light-emitting diodes|
    US16/112,490| US10535709B2|2014-12-30|2018-08-24|Optoelectronic device with light-emitting diodes|
    US16/706,327| US10923530B2|2014-12-30|2019-12-06|Optoelectronic device with light-emitting diodes|
    [返回顶部]