• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to a device or apparatus for performing shape measurements on a first surface (13) of a wafer (12) relative to structures (14) present under said first surface (13), which comprises (i) profilometry means (10) arranged to perform shape measurements on said first surface (13) of the wafer (12) according to at least one measuring field; (ii) imaging means (11) facing said profilometry means (10) and arranged to acquire a reference image of said structures (14) on or through a second surface of the wafer (12) opposite to the first surface (13) according to at least one imaging field; said profilometry means (10) and said imaging means (11) being arranged so that the measurement and imaging fields are referenced in position in a common reference frame (15). The invention also relates to a method implemented in this device or this apparatus.
    公开号:FR3026481A1
    申请号:FR1459086
    申请日:2014-09-25
    公开日:2016-04-01
    发明作者:Gilles Fresquet
    申请人:Fogale Nanotech SA；
    IPC主号:
    专利说明:

    [0001] FIELD OF THE INVENTION The present invention relates to a device for performing surface profilometry measurements on wafers during the process. It also relates to a measurement method implemented by the device. The field of the invention is more particularly but in a nonlimiting manner that of measurement and dimensional control of devices in the field of microsystems (MEMs) and in microelectronics. STATE OF PRIOR ART The manufacturing processes used in microelectronics are generally based on successive stages of layer deposition and etching, which lead to the production of components in the form of stacks. A very good flatness of the layers is often necessary. Also it is known to implement techniques, including optical profilometry, to measure this flatness. Among optical profilometry techniques, so-called "open field" techniques are known that make it possible to obtain the shape of a surface directly in one or a small number of measurements. It includes interferometry techniques, which exploit interference between a measurement beam reflected by the surface to be measured and a reference beam. Different architectures of interferometers are possible, some of which are known as interferometers of Linnik, Mirau, Michelson or Fizeau. Optical profilometry techniques based on point distance measurements are also known with a point measuring beam which scans the surface. The detection techniques used in this case can include confocal techniques, chromatic confocal, or based on interferometry or low coherence interferometry (with extended-spectrum sources). However, they have the disadvantage of being much slower than the techniques in the field. A common constraint to all these techniques is that the reflectivity of the surface to be measured at working wavelengths must be high in order to obtain good measurements. It is also necessary that the measurements are not disturbed by parasitic reflections on buried layers. Thus, in general wavelengths which penetrate little or no penetration into the materials (visible wavelengths for silicon) are used, or, when the layers to be measured are transparent in the visible, it is first carried out therein. metal deposit (tantalum). In certain situations, it is necessary to measure and characterize the flatness of layers that cover components or chips already made, with respect to these components. The problem that arises is that these components are not visible from the measurement face. It is therefore difficult to attach or reference the flatness measurements to the exact position of these components, except by using a priori information on the design that is necessarily imprecise. It is an object of the present invention to provide a device and method for profilometry measurements which makes it possible to carry out surface shape measurements identified or referenced in a precise manner with respect to components buried in the wafer or at least located below the surface. surface to be measured. Another object of the present invention is to propose a device and a profilometry measurement method which make it possible to carry out surface shape measurements in a reference system linked to components buried in the wafer or at least located below the surface to be measured. . DESCRIPTION OF THE INVENTION This object is achieved with a device for making shape measurements on a first surface of a wafer with respect to structures present under said first surface, characterized in that it comprises: profilometry means arranged to perform shape measurements on said first surface of the wafer according to at least one measuring field; Imaging means facing said profilometry means and arranged to acquire a reference image of said structures on or through a second surface of the wafer opposite the first surface according to at least one imaging field; said profilometry means and said imaging means being arranged so that the measurement and imaging fields are referenced in position in a common reference frame. The structures may be for example components, tracks or chips that are buried in the layers of the wafer, or possibly made on the face of the wafer opposite to the first surface. These are structures that are not visible on the first surface, and therefore are below this surface from the point of view of profilometry means. The imaging means facing the profilometry means may be located opposite a second surface, opposite to the first, of the wafer to be measured when it is positioned in the device of the invention. They thus make it possible to image the structures, or at least to obtain images which make it possible to locate the structures, and this even if these structures are not discernible through the first surface. According to the invention, the profilometry means and the imaging means are calibrated or referenced spatially so that the position and the extent of their respective measurement and imaging fields are known relative to one another , or in other words be referenced in the same common repository. Preferably, the measurement and imaging fields can be represented in the form of substantially parallel planes. They can be referenced in a common repository in the form of a reference plane. Thus, it is possible to attach or connect the profilometry measurements to the position of the structures without the need for prior knowledge of the exact position of the wafer in the device of the invention. According to embodiments, the device according to the invention may comprise imaging means capable of producing images at wavelengths in the infrared. Thus, it is possible to image structures that are "buried" in the wafer layers, including through non-transparent materials in visible wavelengths, such as silicon. In particular, it is possible to image structures through the substrate to which they are made. According to embodiments, the device according to the invention may comprise profilometry means with a solid field interferometer. It may include a solid field interferometer of one of the following types: Michelson, Mirau, Linnik, Fizeau. Full-field interferometers are interferometers that process measurement signals or two-dimensional interference structures representative of at least a portion of the surface to be measured. According to embodiments, the profilometry means and the imaging means may have substantially parallel optical axes. According to embodiments, the profilometry means and the imaging means may be aligned along a common optical axis. According to embodiments, the device according to the invention can comprise profilometric means with a point-in-time sensor, and scanning means for scanning the first surface with said point-in-time sensor. It may in particular comprise a distance sensor of one of the following types: confocal sensor, confocal chromatic sensor, interferometry, interferometer with low coherence in the spectral domain, interferometer with low coherence in the time domain, interferometer with low coherence with scanning of frequency, mechanical probe, atomic force microscopy (AFM) probe. In this case, the height of the surface is measured point-to-point, to reconstruct shape information. The distance sensor may include any sensor capable of producing information of height or local altitude of the surface. It can thus be in particular an optical sensor (confocal, interferometric), a mechanical sensor (probe), or a sensor that exploits the interactions at the atomic level between a probe tip and the surface to measure ("atomic force microscope" in English, AFM). The device according to the invention may further comprise a support for positioning a wafer with a first face facing the profilometry means and a second face facing the imaging means. Wafer support may include a "chuck". In another aspect, there is provided a method for performing shape measurements on a first surface of a wafer relative to structures present under said first surface, which comprises steps of: acquiring shape measurements according to at least one measuring field on said first surface of the wafer by implementing profilometry means; - Acquisition of a reference image of the structures according to at least one imaging field on or through a second surface of the wafer 15 opposite the first surface by implementing imaging means facing said means profilometry; which measurement and imaging fields are referenced in position in a common reference frame. According to embodiments, the method of the invention may further comprise a step of identifying the position of the structures in the reference image. It may comprise a step of acquiring shape measurements in a neighborhood of at least one identified structure position. According to embodiments, the method according to the invention may further comprise a preliminary calibration step with a location of the position of the measurement and imaging fields in a common reference frame in the form of a reference plane. . DESCRIPTION OF THE FIGURES AND EMBODIMENTS Other advantages and particularities of the invention will appear on reading the detailed description of implementations and non-limiting embodiments, and the following appended drawings: FIG. 1 illustrates an embodiment of the device according to the invention; FIG. 2 illustrates a profilometer embodiment with a Michelson type solid-field interferometer, FIG. 3 illustrates a profilometer embodiment with a Mirau-type solid-field interferometer; FIG. 4 illustrates a first embodiment of the method according to the invention; FIG. 5 illustrates a second embodiment of the method according to the invention, - FIG. 6 illustrates examples of measurements obtained with the device according to the invention. It is understood that the embodiments which will be described in the following are in no way limiting. It will be possible, in particular, to imagine variants of the invention comprising only a selection of characteristics described subsequently isolated from the other characteristics described, if this selection of characteristics is sufficient to confer a technical advantage or to differentiate the invention with respect to the state of the art. This selection comprises at least one feature preferably functional without structural details, or with only a part of the structural details if this part alone is sufficient to confer a technical advantage or to differentiate the invention from the state of the prior art.
    [0002] In particular, all the variants and all the embodiments described are combinable with each other if nothing stands in the way of this combination at the technical level. In the figures, the elements common to several figures retain the same reference.
    [0003] Firstly, with reference to FIG. 1, an embodiment of the device according to the invention. In a preferred embodiment, the device according to the invention is intended to perform shape measurements on a surface 13 of a wafer 12 which furthermore comprises structures 14 in layers 30 buried under the surface 13. device according to the invention can then locate or represent in a common frame 15 the shape of the surface 13 and structures 14 (or their position). Thus, by way of nonlimiting example, the device according to the invention can be used to control the flatness of a contact layer deposited above or so as to cover structures 14 made on the substrate of a wafer 12. These structures 14 may especially be integrated circuits 14.
    [0004] In this case, it is important to control the flatness of the contact layer precisely above the integrated circuits 14. However, this contact layer does not make it possible to visualize the position of the integrated circuits on the side of the surface 13, in particular if it is covered with a metal layer. It is then possible with the device according to the invention to visualize and locate the integrated circuits 14 through the substrate which constitutes the part of the wafer 12 opposite to the surface 13 to be measured, and to perform or locate the shape measurements. relative to the position of the integrated circuits 14. The device according to the invention therefore comprises profilometry means 10 which make it possible to carry out measurements of shape on the surface 13 of the wafer 12, when this wafer 12 is positioned in a support wafer (not shown in Fig. 1). The device according to the invention also comprises imaging means 11 intended to image the structures 14 present in or under the wafer 12 relative to the surface 13. The profilometry means 10 and the imaging means 11 are arranged in a screw configuration. opposite, on both sides of the wafer 12 when it is positioned in the wafer support. The wafer support is provided with displacement and translation and / or rotation means which make it possible to precisely move and position the wafer 12 relative to the profilometry 10 and imaging means 11. The control of the device and the processing of the Data is provided by a computer 28. In the embodiment shown, the profilometry means 10 are made in the form of a microscope with a full-field interferometer 20 at the objective, which thus constitutes a profilometer at field 10. A light source 16, for example based on light-emitting diodes or halogen source generates an illumination beam 19 in visible and / or near-infrared wavelengths. This illumination beam 19 is directed towards the full-field interferometer 20 by a cube or a splitter plate 18. In the full-field interferometer 20, the illumination beam 19 is separated into a reference beam which illuminates a beam. reference mirror and a measuring beam which illuminates the surface 13 of the wafer 12. The light reflected respectively by the surface 13 of the wafer and the reference mirror is redirected to a matrix detector 17, for example of the CCD or CMOS type. The profilometer 10 comprises optics and lenses, including an imaging objective, arranged to image the surface 13 of the wafer on the matrix detector 17. When the difference in optical paths between the measurement beam and the reference beam is less than the coherence length of the light source 16, interference fringes due to interference between the measurement beam and the reference beam are also visible. The demodulation of these interference fringes, according to techniques known to those skilled in the art, makes it possible to reconstruct the shape of the surface 13 according to a measuring field corresponding substantially to the area of this surface 13 imaged on the detector 17. There are different kinds of full field interferometers which can be used in the context of the invention. With reference to FIG. 2, the full-field interferometer 20 can be made according to the Michelson configuration. It then comprises a separator cube 41 (or a splitter plate) disposed between an imaging objective 40 and the surface 13 to be measured. This splitter cube 41 returns a fraction of the incident light beam 19 to a reference mirror 42 to generate the reference beam.
    [0005] With reference to FIG. 3, the full field interferometer 20 can also be made according to the Mirau configuration. It then comprises a semi-reflective splitter plate 51 positioned between an imaging objective 40 and the surface 13 to be measured. This splitter blade returns a portion of the incident light to a reference mirror 52 positioned at the center of the illumination beam. The full-field interferometer can also be performed according to a Linnik configuration. This configuration is a variant of the Michelson configuration in which an imaging objective is introduced into each arm of the interferometer. In this case, the splitter cube 41 is located before the imaging lens in the illumination beam. Of course, other configurations of full field interferometers 20 are also possible within the scope of the invention.
    [0006] The profilometer also comprises translational means 43, made for example by using a piezoelectric actuator, which make it possible to very accurately move the assembly constituted by the interferometer 20 and the imaging objective 40 by This translational means 43 makes it possible to vary the optical path of the measurement beam between the separating element (for example the separating cube 41 of FIG 2 or the separating plate 51 of FIG. 3) and the surface to be measured 13, without modifying the optical path of the reference beam between this separator element and the reference mirror. It is thus possible to vary the phase of the interference structure obtained on the detector 17 in a known or controlled manner, and to implement phase stepping reconstruction algorithms which make it possible to reconstruct the shape of the surface 13. in a very precise and unambiguous manner on the basis of image sequences acquired with different phase shift conditions.
    [0007] The imaging means 11 are made in the form of an imaging microscope with an illumination source 23, an imaging objective 26, a matrix detector 27 (of the CCD or CMOS type, for example), and an element separator 24 of the blade type or cube separator (for example).
    [0008] The light 25 of the illumination source 23 is directed towards the rear face of the wafer by the separating element 24. The light reflected by the wafer 21 and collected by the imaging objective 26 is transmitted to the matrix detector 27. The optical system with the imaging lens 26 is arranged to allow the formation of an image of the wafer on the matrix detector 22 according to an imaging field. The light source 23 is designed to have an emission spectrum extending in the near infrared to wavelengths greater than 1 micrometer, for which the silicon is no longer completely opaque. This light source 23 may be a halogen source. It is then possible, even with a matrix detector 22 based on silicon, to obtain an image of the structures 14 of the wafer 12 through a silicon layer such as the substrate.
    [0009] As explained above, the profilometry means 10 and the imaging means 11 are arranged so that the measurement and imaging fields are referenced in position in a common reference frame 15. For this, the profilometry means 10 and the means 11 are secured to a support that allows to maintain and / or position them in a precise and stable manner with respect to each other. They are further arranged so that the optical axis 21 of the profilometry means 10 and the optical axis 27 of the imaging means 11 coincide substantially, or at least are close and substantially parallel. In this way, the measurement and imaging fields are substantially superimposed at the level of the wafer 12, and parallax errors due to the thickness of the wafer are avoided. The device is then calibrated, for example by means of a calibration sample or wafer 12 which comprises patterns on both faces whose positions relative to each other are known. It should be noted that since the profilometer 10 is also an imaging system, the calibration can be performed simply by imaging with a wafer 12 which comprises patterns visible on both sides. It is thus possible to locate the measurement and imaging fields in a two-dimensional (X-Y) common referential, or reference plane. In fact, it is not necessary to know the differences in height (relative to the thickness of the wafer 12) between the profilometry and imaging measurements, as long as we took the precaution of positioning the axes. - Optics 21, 27 profilometry and imaging means substantially parallel. For example, it is possible to attach the reference plane 15 to the imaging field which makes it possible to locate the structures 14 of the wafer, and to calculate by calibration a transfer function in the plane (based on translations, rotations and homotheties) which makes it possible to locate the pixels of the measurement field in the imaging field. The device of the invention makes it possible to acquire and process measurements in different ways. By way of example, FIG. 4 presents a method of measuring surface shapes according to the invention which comprises: a step 60 of acquiring a reference image with the imaging means 11; An identification step 61 of the position of the structures 14 of the wafer 12 (and possibly of their shape) in the reference image, for example using techniques for segmenting known images; a step 62 of acquiring with the profilometer 10 the shape of the surface 13 of the wafer in one or more zones corresponding to the position of the structures 14 identified, taking into account the transfer function obtained during the calibration . By way of example also, FIG. 5 presents a profile measurement method according to the invention which comprises: a step 60 of acquiring a reference image 70 according to an imaging field with the imaging means 11; an identification step 61 of the position of the structures 14 of the wafer 12 (and possibly of their shape) in the reference image, using, for example, known image segmentation techniques; a step 63 of acquiring the shape of the surface 13 of the wafer with the profilometer 10 in a measurement field at least partially superimposed on the imaging field used at the level of the wafer 12; a step 64 of mapping the shape measurements and structures 14 using the transfer function obtained during the calibration. In this embodiment, the identification step 61 of the structures can be omitted if only a visual correspondence is sought. Fig. 6 illustrates measurement results that can be obtained with the invention, particularly in the embodiment described with reference to FIG. 5. It presents: an image 70 obtained with the imaging means 11 with a representation 73 of the structures 14 of the wafer 12; a representation 71 of the shape of the surface 13 of the wafer 12, obtained with the profilometry means 10 and in which the surface shape 10 is represented in contour lines 74; an image 72 combining the contour representation 74 of the shape of the surface, after registration in the reference frame 15 of the image 70, and the representations 73 of the structures 14. It is thus possible to clearly visualize the planarity defects of the 13 of the wafer 12 relative to the structures 14. Of course, the invention is not limited to the examples which have just been described and many adjustments can be made to these examples without departing from the scope of the invention. 20
    权利要求:
    Claims (12)
    [0001]
    REVENDICATIONS1. Device for making shape measurements on a first surface (13) of a wafer (12) relative to structures (14) present under said first surface (13), characterized in that it comprises: - means of profilometry (10) arranged to perform shape measurements on said first surface (13) of the wafer (12) according to at least one measuring field; imaging means (11) facing said profilometry means (10) and arranged to acquire a reference image of said structures (14) on or through a second surface of the wafer (12) opposite to the first surface (13) according to at least one imaging field; said profilometry means (10) and said imaging means (11) being arranged so that the measurement and imaging fields are referenced in position in a common repository (15).
    [0002]
    2. The device of claim 1, which comprises imaging means (11) capable of producing images at infrared wavelengths. 20
    [0003]
    3. The device of one of claims 1 or 2, which comprises profilometry means (10) with a solid field interferometer (20).
    [0004]
    The device of claim 3 which comprises a solid field interferometer (20) of one of the following types: Michelson, Mirau, Linnik, Fizeau.
    [0005]
    5. The device of one of claims 3 or 4, wherein the profilometry means (10) and the imaging means (11) have optical axes (21, 27) substantially parallel. 30
    [0006]
    6. The device of one of claims 1 or 2, which comprises profilometry means (10) with a point distance sensor, and scanning means for scanning the first surface (13) with said point distance sensor. -14-
    [0007]
    7. The device of claim 6, which comprises a distance sensor of one of the following types: confocal sensor, confocal chromatic sensor, interferometry, interferometer with low coherence in the spectral domain, interferometer with low coherence in the time domain, Low coherence scanning frequency interferometer, mechanical probe, Atomic Force Microscopy (AFM) probe.
    [0008]
    8. The device of one of the preceding claims, which further comprises a support for positioning a wafer (12) with a first face (13) facing the profilometry means (10) and a second face facing the means. imaging (11).
    [0009]
    9. A method for making shape measurements on a first surface (13) of a wafer (12) relative to structures (14) present under said first surface (13), characterized in that it comprises steps: acquiring shape measurements according to at least one measuring field on said first surface (13) of the wafer (12) by using profilometry means (10); acquisition of a reference image of the structures (14) according to at least one imaging field on or through a second surface of the wafer (12) opposite to the first surface (13) by implementing imaging means (11) facing said profilometry means (10); Which measurement and imaging fields are referenced in position in a common reference frame (15).
    [0010]
    The method of claim 9, which further comprises a step of identifying the position of the structures (14) in the reference image. 30
    [0011]
    11. The method of claim 10, which comprises a step of acquiring shape measurements in a neighborhood of at least one identified structural position.
    [0012]
    The method of one of claims 9 to 11, which further comprises a preliminary calibration step with a location of the position of the measurement and imaging fields in a common reference frame (15) in the form of a reference plan.5
    类似技术:
    公开号 | 公开日 | 专利标题
    EP3198220A1|2017-08-02|Device and method for surface profilometry for the control of wafers during processing
    EP2888552B1|2019-04-03|Method and device for controllably revealing structures buried in objects such as wafers
    FR2959305A1|2011-10-28|OPTICAL DEVICE AND METHOD FOR INSPECTING STRUCTURED OBJECTS.
    EP0985902A1|2000-03-15|Interferometric device for picking up optical subsurface reflexion and/or transmission characteristics of an object
    WO2017108400A1|2017-06-29|Device and method for measuring height in the presence of thin layers
    WO2015071116A1|2015-05-21|Three-dimensional focusing device and method for a microscope
    FR3014212A1|2015-06-05|DEVICE AND METHOD FOR POSITIONING PHOTOLITHOGRAPHY MASK BY OPTICAL NON-CONTACT METHOD
    EP3443295A1|2019-02-20|Method and system for inspecting and measuring optically a face of an object
    EP1934552B1|2016-12-14|Method and device for measuring heights of patterns
    FR3026836A1|2016-04-08|METHOD AND OPTICAL DEVICE FOR TELEMETRY
    EP3388779A1|2018-10-17|System and method for nanometric super-resolution optical metrology in the far-field
    EP3749919A1|2020-12-16|Method and device for inspecting a surface of an object comprising non-similar materials
    EP3268728A1|2018-01-17|Device and method for detecting defects in bonding zones between samples such as wafers
    FR2936614A1|2010-04-02|SETTING A REFLECTION MICROSCOPE
    WO2020245511A1|2020-12-10|Device and method for measuring interfaces of an optical element
    EP3935341A1|2022-01-12|Method and device for measuring interfaces of an optical element
    WO2020109486A9|2021-03-25|Method and system for measuring a surface of an object comprising different structures using low-coherence interferometry
    FR2950425A1|2011-03-25|Three-dimensional contactless nanotopography method for measurement of altitude of nanostructured object in e.g. micro-optical field by interferometric altitude sensor, involves fixing reference surface and inspected object with each other
    WO2016091983A1|2016-06-16|Method for determining the thickness of a thin layer by multi-wavelength interferometry and corresponding computer program package, storage means and system
    同族专利:
    公开号 | 公开日
    SG11201702440VA|2017-04-27|
    FR3026481B1|2021-12-24|
    JP2017530358A|2017-10-12|
    WO2016046072A1|2016-03-31|
    KR20170059450A|2017-05-30|
    CN106796099B|2020-11-03|
    EP3198220A1|2017-08-02|
    US20170299376A1|2017-10-19|
    US9958261B2|2018-05-01|
    TW201614191A|2016-04-16|
    CN106796099A|2017-05-31|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US20070148792A1|2005-12-27|2007-06-28|Marx David S|Wafer measurement system and apparatus|
    US20130038863A1|2010-04-26|2013-02-14|Nanotec Solution|Optical device and method for inspecting structured objects|
    WO2014029703A1|2012-08-21|2014-02-27|Fogale Nanotech|Device and method for making dimensional measurements on multilayer objects such as wafers|
    US6847458B2|2003-03-20|2005-01-25|Phase Shift Technology, Inc.|Method and apparatus for measuring the shape and thickness variation of polished opaque plates|
    JP2008083059A|2006-09-26|2008-04-10|David S Marx|Measuring system and measuring device for wafer|
    JP2009049122A|2007-08-17|2009-03-05|Fujifilm Corp|Optical semiconductor device, wavelength variable light source using the same and optical tomographic image acquiring apparatus|
    DE102010015944B4|2010-01-14|2016-07-28|Dusemund Pte. Ltd.|A thinning apparatus having a wet etcher and a monitor, and methods for in-situ measuring wafer thicknesses for monitoring thinning of semiconductor wafers|
    CN101915547B|2010-07-28|2012-05-02|深圳市斯尔顿科技有限公司|Time domain OCT measurement method and time domain OCT system|
    KR101422971B1|2010-12-17|2014-07-23|파나소닉 주식회사|Surface shape measurement method and surface shape measurement device|
    GB2489722B|2011-04-06|2017-01-18|Precitec Optronik Gmbh|Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer|US10757394B1|2015-11-09|2020-08-25|Cognex Corporation|System and method for calibrating a plurality of 3D sensors with respect to a motion conveyance|
    CN109672878A|2017-10-13|2019-04-23|康耐视公司|To the field calibration system and method for the vision system of calibration object two opposite sides imaging|
    US10812778B1|2015-11-09|2020-10-20|Cognex Corporation|System and method for calibrating one or more 3D sensors mounted on a moving manipulator|
    FR3045813B1|2015-12-22|2020-05-01|Unity Semiconductor|DEVICE AND METHOD FOR MEASURING HEIGHT IN THE PRESENCE OF THIN FILMS|
    FR3052869B1|2016-06-17|2018-06-22|Unity Semiconductor|DEVICE FOR POSITIONING AN INTEGRATED CIRCUIT PLATE, AND APPARATUS FOR INSPECTING AN INTEGRATED CIRCUIT PLATE COMPRISING SUCH A POSITIONING DEVICE|
    KR102280558B1|2018-07-10|2021-07-23|울산과학기술원|A raman-atomic force microscope|
    KR102256790B1|2018-07-10|2021-05-28|울산과학기술원|Optical aligner of the raman-atomic force microscope|
    CN109916347A|2019-04-16|2019-06-21|合肥工业大学|One kind being based on near-infrared low-coherent light doped silicon wafer surface topography measuring method|
    DE102019114167A1|2019-05-27|2020-12-03|Precitec Optronik Gmbh|Optical measuring device and method|
    CN111664802A|2020-06-03|2020-09-15|中国科学院西安光学精密机械研究所|Semiconductor wafer surface morphology measuring device based on dynamic quantitative phase imaging|
    法律状态:
    2015-06-24| PLFP| Fee payment|Year of fee payment: 2 |
    2016-04-01| PLSC| Publication of the preliminary search report|Effective date: 20160401 |
    2016-09-22| PLFP| Fee payment|Year of fee payment: 3 |
    2017-09-25| PLFP| Fee payment|Year of fee payment: 4 |
    2018-04-20| TP| Transmission of property|Owner name: UNITY SEMICONDUCTOR, FR Effective date: 20180316 |
    2018-09-24| PLFP| Fee payment|Year of fee payment: 5 |
    2019-09-27| PLFP| Fee payment|Year of fee payment: 6 |
    2020-09-28| PLFP| Fee payment|Year of fee payment: 7 |
    2021-09-27| PLFP| Fee payment|Year of fee payment: 8 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1459086A|FR3026481B1|2014-09-25|2014-09-25|SURFACE PROFILOMETRY DEVICE AND METHOD FOR IN-PROCESS WAFER CONTROL|FR1459086A| FR3026481B1|2014-09-25|2014-09-25|SURFACE PROFILOMETRY DEVICE AND METHOD FOR IN-PROCESS WAFER CONTROL|
    US15/513,524| US9958261B2|2014-09-25|2015-09-18|Device and method for surface profilometry for the control of wafers during processing|
    EP15778220.2A| EP3198220A1|2014-09-25|2015-09-18|Device and method for surface profilometry for the control of wafers during processing|
    SG11201702440VA| SG11201702440VA|2014-09-25|2015-09-18|Device and method for surface profilometry for the control of wafers during processing|
    CN201580052115.8A| CN106796099B|2014-09-25|2015-09-18|Apparatus and method for wafer-controlled surface profiling during processing|
    JP2017516376A| JP2017530358A|2014-09-25|2015-09-18|Apparatus and method for surface profile measurement for control of wafers during processing|
    PCT/EP2015/071407| WO2016046072A1|2014-09-25|2015-09-18|Device and method for surface profilometry for the control of wafers during processing|
    KR1020177009213A| KR20170059450A|2014-09-25|2015-09-18|Device and method for surface profilometry for the control of wafers during processing|
    TW104131407A| TW201614191A|2014-09-25|2015-09-23|Surface profilometry device and method for monitoring wafers during processing|
    [返回顶部]