• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    An electronic device (9) comprising: a normally open type power field effect transistor (11) having a control electrode (111) and first and second conduction electrodes (112, 113); ); a control circuit (21) comprising a resistive component (211) connected to the control electrode, the control circuit being configured to apply a potential for blocking the transistor on the control electrode via the resistive component this blocking potential being lower than the potentials of the first and second conduction electrodes; a circuit (31) for detecting a short-circuit between the first and second conduction electrodes, configured to measure the potential of the control electrode during the blocking of the transistor, in order to compare the measured potential with a reference potential , and to generate an anomaly signal according to the result of the comparison.
    公开号:FR3021823A1
    申请号:FR1454808
    申请日:2014-05-27
    公开日:2015-12-04
    发明作者:Francois Tavernier；Pierre Perichon
    申请人:Renault SAS；
    IPC主号:
    专利说明:

    [0001] FIELD EFFECT TRANSISTOR AND ASSOCIATED FAULT DETECTION DEVICE The invention relates to power field effect transistors, and in particular to the detection of a short-circuit failure of a normally open field effect transistor. . Many applications make use of normally open type power field effect transistors used in switching. An increasing number of applications make use of DC voltage sources of power, for example for automobile traction. Power nMos transistors are frequently used for safety functions, for example to isolate a connection terminal with respect to a voltage source. When such a power transistor is confronted with a failure in short-circuit mode, the voltage source can apply a short-circuit current very rapidly reaching a high amplitude. To avoid the occurrence of failures or severe overheating related to such a current, it is essential to detect a transistor failure in a very short time to implement security measures, in particular to control the opening. other transistors or avoid their closure. Among the known failure detection devices, no reasonable cost solution has been identified to detect a failure of a power field effect transistor sufficiently quickly and reliably. The invention aims to solve one or more of these disadvantages. The invention thus relates to an electronic device comprising: a normally open type power field effect transistor having a control electrode and first and second conduction electrodes; a control circuit comprising a resistive component connected to the control electrode, the control circuit being configured to apply a potential for blocking the transistor on the control electrode via the resistive component, this blocking potential; being lower than the potentials of the first and second conduction electrodes; a circuit for detecting a short circuit between the first and second conduction electrodes, configured to measure the potential of the control electrode during the blocking of the transistor, to compare the measured potential with a reference potential, and to generate an anomaly signal based on the result of the comparison. According to a variant, said field effect transistor is chosen from the group comprising CMOS, JFET, IGBT and HEMT transistors.
    [0002] According to another variant, said resistive component is a variable resistor. According to another variant, the detection circuit generates said anomaly signal when said measured potential of the control electrode exceeds the reference potential. According to another variant, the detection circuit is configured to memorize a potential of the control electrode measured and configured to subsequently define this potential measured as said reference potential. According to yet another variant, said power field effect transistor is connected in parallel with another normally open type power field effect transistor and comprises a control electrode and first and second conduction electrodes, said circuit detecting means being configured to measure the potential of the control electrode of the other transistor during its blocking, and configured to generate said abnormal signal when the difference between said measured potentials for the control electrodes exceeds a threshold. According to another variant, the electronic device further includes a power switch, said anomaly signal forcing the opening of said power switch.
    [0003] Other characteristics and advantages of the invention will emerge clearly from the description which is given hereinafter, by way of indication and in no way limiting, with reference to the appended drawings, in which: FIG. 1 is a diagrammatic representation of a first embodiment of an electronic device including a power field effect transistor and a short circuit detection circuit; FIGS. 2 and 3 are schematic representations of the electrical behavior of the transistor and its control circuit, in the absence and in the presence of a malfunction; FIG. 4 illustrates the evolution of parameters of the transistor of FIG. 1 during the appearance of a short circuit; FIG. 5 diagrammatically illustrates an alternative detection circuit; FIG. 6 is a schematic representation of a second embodiment of an electronic device including two power field effect transistors connected in parallel and a short circuit detection circuit; FIG. 7 schematically represents functions of the detection circuit of FIG. 6; FIGS. 8 and 9 illustrate a system including a power field effect transistor and its detection circuit, under two operating conditions; FIG. 10 is a variant of the electronic device of FIG.
    [0004] Figure 1 is a schematic representation of an electronic device 9 according to a first embodiment of the invention. The electronic device 9 comprises a power field effect transistor 11, of normally open type. A power transistor may for example be designed for the application of a potential difference between two conduction electrodes at least equal to 50 V, frequently at least 100 V, and to be crossed by a current at least equal to at 5 A, frequently at least equal to 10 A. In this exemplary implementation, the transistor 11 is a N-type MosFET transistor 15. The transistor 11 here comprises, in a manner known per se, a gate 111 forming a control electrode a source 112 forming a first conduction electrode, and a drain 113 forming a second conduction electrode. The source 112 is here connected to a ground potential.
    [0005] The electronic device 9 also comprises a control circuit 21 intended to apply a control potential on the gate 111 enabling selectively to open or close the transistor 11. The electronic circuit 21 thus applies a potential on a node Vc taking either a Von closing value of the transistor 11, a Voff value of opening of the transistor 11. The control circuit 21 comprises a resistive component 211 connected between the node Vc and the gate 111. The resistive component 211 is here purely resistive. In a manner known per se, the resistive component 211 may include two branches, each including a diode and a resistor. The diodes are then connected in antiparallel. The resistances of each branch may have different values to have different opening and closing speeds for the transistor 11. The electronic device 9 also comprises a circuit 31 for detecting a short circuit between the source 112 and the drain 113. The detection circuit 31 comprises a voltmeter 313, configured to measure the potential of the gate 111 (for example by a potential difference measurement between gate 111 and source 112). The detection circuit 31 also comprises a comparator 311 and a processing circuit 312. The voltmeter 313 applies the measured potential to an input of the comparator 311. The comparator 311 also receives a reference value Vref on another input. The comparator 311 generates an output signal as a function of the comparison between the measured potential and the reference value Vref. The processing circuit 312 receives the output signal of the comparator 311 and generates an abnormality signal as a function of the level of this output signal. The anomaly signal can be used in a manner known per se to prevent consequences of the anomaly detected, for example to switch safety switches, open other transistors or prevent their closing. The inventors have set up an aging simulator of normally open type power field effect transistors in MosFet technology. These transistors have been subjected to switching cycles, in the absence of coolers to cause accelerated aging. The inventors have studied the appearances of the failures of these transistors. The inventors systematically found initial failures in the form of a short circuit. The inventors have also found that failures occur systematically when the transistor was in the open state or switched to the open state. The inventors have also found that 99% of the failures result in degradation of the electrical insulation between the gate and the source of the transistors. Therefore, contrary to a technical prior art of the art, the proposed invention aims to detect the occurrence of a fault during the off-state or open state of the field effect transistor. Usually, a field effect transistor is kept open by applying a control potential such that the potential difference between its control electrode and a first conduction electrode is zero, so that this potential difference is less than the voltage of the control electrode. threshold of this transistor. The control circuit 21 is here configured to apply a potential Voff on the node Vc less than the potential of the first and second conduction electrodes 112 and 113. The control circuit 21 is here configured to obtain a negative potential difference between the gate 111 and the source 112 for the blocking of the transistor 11. The potential Voff is for example less than 0.2 V with respect to the potential of each of the conduction electrodes 112 and 113, preferably less than 0.5 V , see lower than at least the value of the threshold voltage but greater than OV relative to the voltage of the conduction electrodes 112 and 113 To facilitate understanding of the use of such a level of blocking potential, FIGS. and 3 schematically represent the electrical behavior of the transistor 11 and its control circuit 21, between the node Vc and the source 112. In FIG. 2, the transistor 11 is free from malfunction. ement.
    [0006] The structure between the gate 111 and the source 112 of the transistor 11 includes an electrical insulator and can be modeled by a capacitor 114. In FIG. 3, the transistor 11 has a malfunction, due to the degradation of the electrical insulator between the gate 111 and the source 112. The structure between the gate 111 and the source 112 of the transistor 11 can then be modeled by a resistor 115. A voltage divider bridge is then formed between the node Vc and the source 112. the state illustrated in FIG. 3, because of the application of a non-zero potential difference between the node Vc and the source 112, the resistor 115 induces a difference between the potential applied to the control node 21 and the potential applied to the gate 111. If the gate potential measured on the gate 111 exceeds the value Vref, the comparator 311 provides a corresponding output signal. When the processing circuit 312 determines that the measured gate potential exceeds the Vref value when the transistor 11 is open (and thus differs from the potential of the control node 21), it generates an abnormality signal. The processing circuit 312 may take into account other conditions before generating an anomaly signal, for example requiring that the comparator 311 signal the crossing of the value Vref for a sufficient duration, in order to avoid nuisance tripping during periods of time. transient phases.
    [0007] The diagram of FIG. 4 represents, on the one hand, the current flowing through a solid-state field effect transistor and, on the other hand, the gate potential of this transistor during several successive switches. The curve in dashed line corresponds to the gate potential of the transistor in the absence of malfunction. The dashed line corresponds to the gate potential of the transistor in the presence of a short circuit. During an opening switching of the transistor shown in the diagram, a short circuit appears and the transistor supposed to be open is crossed by a current. During the phase where the control circuit applies an opening potential to the gate of this transistor, the potential actually applied to the gate is greater than it should be in the absence of a short circuit, because of the resistive behavior between the gate and the source. This abnormal gate potential is detected by the device detection circuit. During a subsequent switching of closing of the transistor, the gate potential is on the other hand lower than it should be in the absence of short-circuit. Such an electronic device 9 makes it possible to use a power field effect transistor in safety applications, since the appearance of a short circuit can be detected extremely quickly and reliably. In addition, the detection is carried out during the opening phase of the transistor rather than in the closing phases, which makes it possible to detect as early as possible the short circuit, which appears statistically essentially during the phases of opening.
    [0008] The grid potential measurement used by the invention avoids false detections that could be encountered by using the potential difference between the two conduction electrodes to detect a short circuit, and also makes it possible to avoid measuring a difference. high potential. Measuring the gate potential used by the invention is much less expensive than gate current measurement for rapid detection of a short circuit. Furthermore, the measurement of the gate potential used by the invention can be integrated into the control circuit 21. The resistance value of the resistive component 211 influences the sensitivity of the short circuit detection. The higher this load resistance, the more the variation of the gate potential during a malfunction is high, and thus the more this malfunction is easy to detect. On the other hand, a high resistance value slows down the switching of the transistor. By using two branches with different resistance values as detailed previously, a higher resistance value can be used for the branch intended to generate the opening of the transistor, only this opening then being slowed down. FIG. 5 illustrates a variant of the detection circuit 31. In this variant, a filter 314 is interposed between the voltmeter 313 and the comparator 311.
    [0009] This filter 314 is intended to eliminate transient voltage spikes, in order to avoid false short circuit detections. The filter 314 is for example a low pass filter. The cutoff frequency of the filter is then less than the equivalent switching frequency of the transistors and low enough to allow a reduced fault detection time. A cutoff frequency of 500 kHz can for example be used, for a detection time of the order of 10ps. Figure 6 is a schematic representation of an electronic device 9 according to a second embodiment of the invention. The electronic device 9 comprises a transistor 12 and a transistor 13, having a power field effect and of a normally open type. Transistors 12 and 13 here have a structure identical to transistor 11 of FIG. 1. Transistors 12 and 13 are connected in parallel, their respective sources 122 and 132 being connected to a same potential and their respective drains 123 and 133 being connected to the same potential.
    [0010] The electronic device 9 further comprises a control circuit 22 for applying a control potential to the gate 121 of the transistor 12, and a control circuit 23 for applying a control potential to the gate 131 of the transistor 13. The circuits 22 and 23 are synchronized to simultaneously apply a Voff or Von closure potential to respective nodes Vc. The control circuits 22 and 23 respectively comprise resistive components 221 and 231 connected between the gates 121 and 131 and the nodes Vc. The control circuits 22 and 23 can of course be replaced by a single control circuit.
    [0011] The electronic device 9 also comprises a measuring circuit 32 comprising a voltmeter 323 intended to measure the potential of the gate 121, and a measuring circuit 33 comprising a voltmeter 333 intended to measure the potential of the gate 131. The electronic device 9 furthermore comprises a detection circuit 34 receiving the potentials respectively measured by the voltmeters 323 and 333. FIG. 7 schematically represents various functions of an example of a detection circuit 34 of the electronic device 9 of FIG. 6. The detection circuit 34 here comprises a filter circuit 341 on the input of which the potential measured by the voltmeter 323 is applied, and a filter circuit 342 20 on the input of which the potential measured by the voltmeter 333 is applied. The filter circuits 341 and 342 are intended to eliminate transient voltage peaks that can be the cause of false false detections. The detection circuit 34 further comprises a circuit 343 receiving as input the potentials filtered by the filters 341 and 342. The circuit 343 outputs the difference between these filtered potentials. The function of the circuit 344 is to provide on its output the absolute value of the difference between the filtered potentials. The absolute value of the difference is applied to a first input of a comparator 345. A threshold value Ref is applied to another input of the comparator 345. When the absolute value of the difference exceeds the threshold 30 Ref, the comparator output 345 generates a fault signal. Thus, according to this second embodiment, it is considered extremely low the probability that transistors 12 and 13 have a short-circuit failure simultaneously. Therefore, the gate potential of the non-fault transistor serves as a comparison reference for detecting an abnormal gate potential of the short-circuit transistor. It can be noted that when one of these transistors is destroyed, it protects the other because all the current passes through it. This second embodiment makes it possible in particular to provide reliable short-circuit detection by eliminating the dispersions between the transistors and aging-related dispersions of such transistors.
    [0012] FIGS. 8 and 9 illustrate a system including a normally open type power field effect transistor 11 and its detection circuit 31. The system further includes a DC voltage source 4 (such as a battery d electrochemical accumulators) and a controlled switch 14, for example a power field effect transistor. The system comprises two poles 41 and 42, and two branches connected in parallel between the poles 41 and 42. A first branch includes the transistor 11 and the DC voltage source 4 connected in series. A second branch includes switch 14, for example configured to be of normally closed type. The switch 14 and the transistor 11 are connected via a node 43. In FIG. 8, the system is in a storage configuration, in which the positive terminal of the source 4 is isolated from the pole 42 by the transistor 11 in the open state. The negative terminal of the source 4 remains connected to the pole 41. In order for the potential difference between the poles 41 and 42 to be zero, the switch 14 is closed. In Figure 9, the system is in a power supply configuration of an electrical load. In this configuration, the positive terminal of the source 4 is connected to the pole 42 by the transistor 11 in the closed state. The pole 42 and the node 43 are isolated from the pole 41 via the switch 14 in the open state. In the configuration of FIG. 8, the risk is that the transistor 11 experiences a short-circuit failure, the DC voltage source 4 then delivering a short-circuit current through the transistor 11 and the switch 14 closed. To avoid this, when the control circuit 31 detects the occurrence of a short circuit on the transistor 11, it generates a fault signal controlling the opening of the switch 14 or the prohibition of the closing of this switch. Thus, the system can be maintained in the configuration of FIG. 9, which makes it possible to prevent the DC voltage source 4 from delivering a short-circuit current. In the first embodiment, the value Vref may be variable. The value Vref can then be set in different ways. The example of FIG. 10 illustrates a variant of an electronic device 9 according to the first embodiment. In this variant, the detection device 31 includes a buffer memory 315. The buffer memory 315 receives a potential measured by the voltmeter 313 during an opening phase of the transistor 11. The buffer memory 315 applies this measured value to its output with a time lag. Thus, the value Vref is defined by an earlier measurement of the potential on the gate 111.
    [0013] The value Vref can also be generated via a capacitance for modeling the structure between the gate 111 and the source 112. The resistive components 211, 221 and 231 can be implemented in the form of variable resistors. . Their resistance value may, for example, be adjusted according to the desired detection sensitivity, without systematically sacrificing the switching dynamics of the power transistor.
    [0014] In the previously detailed examples, the normally open type power field effect transistor is a MosFET type transistor. The invention is also applicable to any other type of normally open type power field effect transistor, for example in HEMT, IGBT or JFET technology. For all of these transistor types, a failure of the insulator of the control electrode can lead to a short circuit. The invention has been mainly detailed in an application to a system including a battery, with a normally open type power transistor used as a serial switch for this battery. However, an electronic device according to the invention may include many other applications, for example by connecting such transistors in the inverter bridge arms, for example for electric motorization applications. 25
    权利要求:
    Claims (7)
    [0001]
    REVENDICATIONS1. Electronic device (9), characterized in that it comprises: - a normally open type power field effect transistor (11), comprising a control electrode (111) and first and second conduction electrodes (112, 113); a control circuit (21) comprising a resistive component (211) connected to the control electrode, the control circuit being configured to apply a potential for blocking the transistor on the control electrode via the resistive component this blocking potential being lower than the potentials of the first and second conduction electrodes; a circuit (31) for detecting a short-circuit between the first and second conduction electrodes, configured to measure the potential of the control electrode during the blocking of the transistor, in order to compare the measured potential with a reference potential , and to generate an anomaly signal according to the result of the comparison.
    [0002]
    An electronic device (9) according to claim 1, wherein said field effect transistor (11) is selected from the group consisting of CMOS, JFET, IGBT and HEMT transistors.
    [0003]
    An electronic device (9) according to claim 1 or 2, wherein said resistive component (211) is a variable resistor.
    [0004]
    An electronic device according to any one of the preceding claims, wherein the detection circuit generates said abnormality signal when said measured potential of the control electrode exceeds the reference potential.
    [0005]
    An electronic device (9) according to claim 4, wherein the detection circuit is configured to store a potential of the measured and configured control electrode to subsequently define that measured potential as said reference potential.
    [0006]
    An electronic device (9) according to any one of claims 1 to 3, wherein said power field effect transistor (12) is connected in parallel with another power field effect transistor (13) of the type normally open and having a control electrode (131) and first and second conduction electrodes (132, 133), said detection circuit being configured to measure the potential of the control electrode of the other transistor during its blocking, and configured to generate said anomaly signal when the difference between said measured potentials for the control electrodes exceeds a threshold.
    [0007]
    An electronic device (9) according to any one of the preceding claims, further including a power switch (14), said abnormal signal forcing the opening of said power switch (14).
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1454808A|FR3021823B1|2014-05-27|2014-05-27|FIELD EFFECT TRANSISTOR AND ASSOCIATED FAILURE DETECTION DEVICE|FR1454808A| FR3021823B1|2014-05-27|2014-05-27|FIELD EFFECT TRANSISTOR AND ASSOCIATED FAILURE DETECTION DEVICE|
    US15/314,216| US10161989B2|2014-05-27|2015-05-26|Field-effect transistor and associated fault detection device|
    CN201580033123.8A| CN106461723B|2014-05-27|2015-05-26|Field effect transistor and related fault detection device|
    JP2016569851A| JP2017523636A|2014-05-27|2015-05-26|Field effect transistor and failure detection apparatus thereof|
    EP15727333.5A| EP3149853B1|2014-05-27|2015-05-26|Field-effect transistor and associated fault detection device|
    PCT/EP2015/061502| WO2015181112A1|2014-05-27|2015-05-26|Field-effect transistor and associated fault detection device|
    KR1020167035959A| KR20170012378A|2014-05-27|2015-05-26|Field-effect transistor and associated fault detection device|
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