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    • 专利摘要:
    It is a multi-level converter comprising at least one arm (B) formed of n stages (Et1, Et2, ...., Etn) mounted in cascade. The first stage (Et1) comprises a single switching structure (Ce10) with four voltage levels and an ith stage (i lying between two and n) comprising i four-level switching structures (Cei1, Cei2, ... Ceii). voltage, identical mounted in series. Each four-level switching structure comprises a floating capacitor-type cell (T1, T2, T1 ', T2', C12), two basic switching cells (T3u, T3'u, T3l, T3'l). and a capacitive divider bridge (C9, C10, C11), the base switch cells being connected between the voltage divider bridge and the floating capacitor type cell.
    公开号:FR3021173A1
    申请号:FR1454238
    申请日:2014-05-13
    公开日:2015-11-20
    发明作者:Jean-Paul Lavieville
    申请人:Schneider Toshiba Inverter Europe SAS；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The present invention relates to multilevel power converters more particularly intended to operate in the field of medium voltage. SUMMARY OF THE INVENTION STATE OF THE PRIOR ART Known medium voltage power converters generally use semiconductor switches put in series to allow a rise in voltage. The major difficulty in putting these semiconductor switches in series is to obtain identical voltages across all these semiconductor switches at each instant. If transient or permanent overloads occur, the destruction of semiconductor switches may occur. Techniques based on the interleaving of switch commands associated with the use of transformers have been developed, they make it possible to manage the distribution of voltages and to reconstruct the waveforms. But transformers have a significant cost and they prevent the realization of compact converters. Another solution has appeared, these are the NPC (neutral point clamped or neutral clamping) type cells with two pairs of semiconductor switches in series, two series connected diodes on one side to the point common between the two switches of the first pair and the other at the common point between the two switches of the second pair. In addition, there is a series of two capacitors connected to the terminals of the assembly formed by the pairs of semiconductor switches. The common point between the two diodes in series is connected to the common point between the two capacitors of the series.
    [0002] This type of cell leads to a satisfactory waveform and a reduction in voltage stresses on the semiconductor switches. On the other hand, there may be imbalances in the voltage across the capacitors. Improvements in the original NPC topology have occurred, replacing the two diodes with a pair of semiconductor switches. This topology is called ANPC at 3 voltage levels. To further increase the acceptable voltage level, it has been proposed to put more switches in series and to add capacitors, which leads to the topology called ANPC at 5 voltage levels. ANPC type cells 5 voltage levels are currently limited to voltage levels of the order of 6.9 kV, which is not necessarily sufficient. Modular multi-level converters (MMCs) are also known in which each arm to be mounted at the terminals of a DC voltage source comprises two series assemblies, having a common terminal to be connected to an AC power source. Each set comprises several modules, each formed of at least two elementary switches in series and a capacitor connected in parallel with them. A connection is made between the point common to the two elementary switches of a module and one end of the series of elementary switches of a neighboring module. Depending on the on or off state of the elementary switches of a module, the capacitor is short-circuited or in the circuit. The capacitors have the same value and a voltage withstand identical to the ratio between the DC voltage applied to an arm divided by the number of modules of the arm. The value of the capacitors depends on the frequency of the AC output signal in the case of inverter operation or the input signal in the case of rectifier operation. Their voltage resistance is limited, which makes it possible to limit the overvoltages generated by their parasitic inductances. In the case of a variable speed drive, the supply frequency of a motor varies from zero to the nominal value, so that it is not possible to have a capacitor of reasonable value.
    [0003] It has also been proposed to make floating capacitor type cells, also known as nested elementary cells. Such a floating capacitor type cell makes it possible to connect a voltage source to a current source by associating any number of elementary cells in series. Each elementary cell comprises two semiconductor switches in series and a capacitor interconnects two neighboring elementary cells in the manner of a scale. This solution, however, has drawbacks related to the presence of the floating capacitor between two elementary cells. The more the number of elementary cells increases, the higher the cost related to capacitors increases and the amount of energy stored in these capacitors is important. The capacitors have the same value, but different voltage withstands, the voltage resistance increases with the rank of the elementary cell, it is worth kE / nk being the rank of the elementary cell, n being the total number of elementary cells and E the voltage applied at the input of the elementary cell of rank one. The value of the capacitors is essentially related to the switching frequency. The size of the capacitors is all the greater as their resistance to tension is high. It is the same for the parasitic inductance they possess. These parasitic inductances are at the origin of switching overvoltages, higher overvoltages will thus appear on the elementary cells of high rank.
    [0004] In the articles [1], [2] whose references are at the end of the description, it has been proposed a cell with three semiconductor switches in series to obtain 4 voltage levels including a capacitor-type cell floating. However, it is currently limited, with existing semiconductor switches, to voltage levels of the order of 6.6 kV which is not sufficient in some applications, this level only corresponding to a fraction of the useful range of the medium voltage. The number of voltage levels affects the behavior over time of the insulators of an engine that will be powered by the cell. The lower the number of voltage levels, the shorter the life of the insulation. These are intended to provide a multilevel converter that can work at voltage levels higher than those of the prior art, without having need to use transformers, or to multiply the number of semiconductor switches put in series. Another object of the invention is to provide a multilevel converter which is cheaper and more reliable than the multi-level converters of the prior art, for a given voltage level. Yet another object of the invention is to propose a multi-level converter that uses batches of standard capacitors for limited voltage withstand. A further object of the invention is to propose a multi-level converter which limits the appearance of parasitic inductances and their influence. To achieve this, the present invention proposes to produce a multi-level converter comprising at least one arm formed of several stages of rank one to n (n integer greater than one) cascaded, the tier 1 stage being intended to be connected to a current source and the rank n stage being intended to be connected to a voltage source. The tier one stage has a single switching structure with four voltage levels. A stage of rank i (i between two and n) comprises i switching structures with four identical voltage levels connected in series. Each of these switching structures comprises a float-type capacitor cell having three voltage levels comprising a quadruple of elementary switches in series having a middle node, two base cells each formed of a pair of series elementary switches having two extreme terminals and a mid-point and a capacitive divider bridge having two ends comprising a triplet of energy storage devices connected in series among which two energy storage devices are in extreme position. Each extreme energy storage device is connected to the extreme terminals of a different basic switching cell, a midpoint of each basic switching cell is connected to a different end of the quadruple of elementary switches.
    [0005] The middle node of each floating capacitor type cell of the rank tier i is connected to one end of the capacitive divider bridge of a four-level switching structure of the rank tier i-1. The converter thus defined makes it possible to reach a voltage level of the order of 13.8 kV with current limited voltage withstand switches (6.5 kV), limiting the number of stages to two and therefore in using only six elementary switches in series. To balance the voltage switching structures at four voltage levels, the energy storage devices of the same capacitive divider bridge have the same energy storage capacity and the same voltage withstand.
    [0006] In order to respect the rules of connection between voltage source and current source, the middle node of at least one floating capacitor type cell of rank stage i is connected to one end of the capacitive divider bridge of the phase stage. rank i-1 via an inductor. When several inductances connect the stage of rank i to the stage of rank i-1, these inductances have the same value. The two pairs of elementary switches of the two basic switching cells of the same stage have the same switching function. In operation, the elementary switches of the same pair are always in complementary states to a value of dead time.
    [0007] In the quadruple of elementary switches of a floating capacitor type cell, two are in the extreme position and two are in the middle position, the two elementary switches in the extreme position are always in complementary states and the two elementary switches in the middle position. are always in complementary states, one being passing and the other being blocked.
    [0008] The elementary switches each comprise a controllable power electronic switch associated with a diode connected in antiparallel. The energy storage devices are selected from a capacitor, a battery, a fuel cell.
    [0009] The present invention also relates to a speed variator comprising a cascade with a converter thus characterized operating AC / DC rectifier and a converter thus characterized operating DC / AC inverter, interconnected by their continuous sides via a source Of voltage.
    [0010] BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIG. 1A illustrates, very schematically, a multi-level converter arm object of the invention with n cascaded stages, Figure 1B is a single-phase multi-level converter having two arms similar to that of Figure 1A; FIG. 2 shows one of the switching structures with 4 voltage levels of the multi-level converter object of the invention; FIG. 3A shows an arm of a converter object of the invention with two stages in an inverter operation and FIG. 3B shows an arm of a converter object of the invention with two stages in a rectifier operation; FIGS 4.1 to 4.13 illustrate timing diagrams of the reference signal Vref (FIG 4.1), the carriers used with the reference voltage Vref for controlling the elementary switches of the switching structure at 4 voltage levels of FIG. K1, Kr (Fig. 4.2), K2, K2 '(Fig. 4.3), K3u, K3'u, K3I, K3'I (Fig. 4.4), control signals of the elementary switches of the 4-stage switching structure. voltage levels in Figure 2: K1 (Fig. 4.5), Kr (Fig. 4.6), K2 (Fig. 4.7), K2 '(Fig. 4.8), K3u (Fig. 4.9), K3'u (Fig. 4.10), K3I (Fig. 4.11), K3'I (Fig 4.12), the output voltage Vs of the switching structure with 4 voltage levels (Fig 4.13), in a DC / AC conversion operation; FIGS. 5.1 to 5.14 show timing diagrams of the reference signal Vref (FIG 5.1), the carriers used with the reference voltage Vref for controlling the elementary switches of the multi-level converter arm of FIG. 3A: T1, T1 (Fig. 5.2), T2, T2 '(Fig. 5.3), T3u, T3'u, T31, T3'I (Fig 5.4), T4u, T4'u, T41, T4'1 (Fig 5.5) , T5u, T5'u, T51, T5'I (Figure 5.6), T6u, T6'u, T61, T6'1, T7u, T7'u, T71, T7'I (Figure 5.7), functions of switching used to control the elementary switches of the multi-level converter arm of Figure 3A: F10 (Figure 5.8), F20 (Figure 5.9), F30 (Figure 5.10), F40 (Figure 5.11), F50 (Figure Fig. 5.12), F60 (Fig.5.13), the output voltage Vs of the multi-level converter arm of Fig. 3A (Fig. 5.14) in a DC / AC conversion operation; FIG. 6 illustrates an exemplary speed variator associating two multi-level converters according to the invention, one operating as a rectifier and the other as an inverter. DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS Referring to FIG. 1A which shows an electric diagram of an arm B of a multi-level converter object of the invention, in a general structure. It allows working at voltages in the medium voltage range up to around 13.8 kV while the voltage resistance of existing semiconductor switches to date is limited to 6.5 kV. It will be described initially in an example of a DC / AC converter arm.
    [0011] The multi-level converter object of the invention, like that illustrated in Figure 1B, comprises one or more arms B similar to that shown in Figure 1A. They are intended to be connected each between the same two power sources, among which a voltage source VDC and a current source I. Two arms are used in a single-phase converter. Three arms would be used in a three-phase converter. The arm B of FIG. 1A is intended to be connected between the voltage source VDC and the current source I. The converter can then operate as a DC / AC converter (inverter) or as an AC / DC converter (rectifier). In the case of a DC / AC converter, the current source is alternating and can be for example an electric motor for example, and the voltage source is continuous and can be for example a DC bus connected to the output of a rectifier. In the case of an AC / DC converter, the current source is alternating and can be for example the power supply network and the voltage source is continuous and can be for example a capacitor or a battery. The converter arm B has n stages Et1, Et2, .... Eti, .... Etn connected together in cascade. n is an integer greater than or equal to two. The first stage Et1 or output stage, in the inverter application, is intended to be connected to the current source I. It is represented formed of a resistor R and an inductance L in series in FIG. 3A. The n-stage stage Etn or input stage, in the inverter application, is intended to be connected to the voltage source VDC. In an AC / DC converter configuration, the first stage Et1 or input stage would be connected to a current source and the stage of rank n Etn or input stage would be connected to a voltage source. The input and output of the converter are reversed when switching from inverter operation to rectifier operation and vice versa. The following description is based on Figure 1A and operation as a DC / AC converter.
    [0012] The rank one Et1 stage comprises a single switching structure with four voltage levels Ce10. A stage of rank i (i integer between 2 and n) Eti comprises i switching structures at four voltage levels Cell, Cei2 ... Ceii, identical, connected in series. Each of the four-level switching structures Cell, Cei2 ... Ceii of the rank i stage Eti is connected via a Lauxi1 inductor, Lauxi2 'Lauxii to the rank i-1 stage. . Rank tier i-1 is not shown. Thus, in FIG. 1A, the rank 2 stage Et2 comprises two switching structures with four voltage levels Ce21, Ce22 which are connected via two inductors Laux21 and Laux22 to the tier 1 stage Et1.
    [0013] The stage of rank n Etn comprises n switching structures at four voltage levels Cen1, Cen2, .... Cen (n-1), Cenn which are connected via n inductors Lauxn1, Lauxn2, Lauxn (n-1), .... Lauxnn upstairs n-1. Rank tier i-1 is not shown. Each of these inductances is comparable to a current source to respect the rules of connection between voltage source and power source. The inductances that connect two same stages are of the same value. On the other hand, inductances which do not connect two same stages do not necessarily have the same values, but for the sake of simplification, one can choose them of the same value. It is possible that the connection of a switching structure of a stage of any rank to the stage which precedes it, is done directly without the presence of an inductance. It suffices that there remain one or more inductances between this stage of any rank and the stage which precedes it. The remaining inductance (s) will then have an increased value compared to the one they would have if all the inductances were present between the two stages. It is ensured that the total value of the inductances which connect two successive stages is the same whatever the number of inductances. To illustrate this principle, FIG. 1A shows the dashed Laux22 inductance, which means that it can be omitted. It can be seen that the voltage VDC applied to the stage of rank n Etn has been split into n equal voltages associated in series. These are the input voltages of the switching structures at four voltage levels of the n-rank stage. These voltages are referenced En1, En2, En (n-1), Enn. Each switching structure at four voltage levels Ce10 to Cenn comprises, as will be seen below, with reference to the description of FIG. 3A, a capacitive divider bridge which materializes a voltage source. These capacitive divider bridges are referenced Ca10, for the switching structure with four voltage levels Ce10. As a variant, it is possible for the voltage source VDC to be formed of n elementary voltage sources each connected to one of the n switching structures at four voltage levels Cen1,... Cenn of the stage n Etn, at the terminals of each of the capacitive divider bridges. The voltages En1, En2, En (n-1), En are the voltages at the terminals of the capacitive dividing bridges of the stage of rank n. The outputs of the switching structures at four voltage levels Cen1 to Cenn are considered as floating voltage sources. They are connected via the inductances to the capacitive divider bridges of the switching structures at four voltage levels of the n-1 rank stage. These four-level n-1 stage voltage switching structures are also considered as floating voltage sources. The inductances between the n-rank stage and the n-1 rank stage are comparable to current sources in order to respect a voltage source-source alternation. The components of the nth stage Etn are selected so that the input voltage VDC is split into n equal input voltages applied to each of the n switching structures at four voltage levels Cen1 to Cenn. Thus VDC / n is applied to each of the switching structures at four voltage levels of the nth stage Etn. It is possible to define a conversion function f associated with each switching structure at four voltage levels, it links the input voltage Ve applied to said switching structure at four voltage levels to the voltage Vs present at the output of the same said switching structure. Vs = f * Ve with -1 <f <1 In each stage, the switching structures at four voltage levels are configured and controlled so that their associated conversion functions are equal. In this way, the voltages applied at the input of each of the switching structures at four voltage levels are equal to VDC / n. All switching structures with four voltage levels of the converter must support this voltage VDC / n. This fulfills the original purpose of reducing voltage stresses on semiconductor switches for a given DC voltage applied to the n-rank stage. With reference to FIG. 2, a switching structure with four voltage levels of the multi-level converter object of the invention will be described. This four-level voltage switching structure comprises a floating capacitor type cell 20 with three voltage levels, a first and a second base switching cell 21 and 22 and a capacitive divider bridge 23. The capacitor type cell Float 20 comprises a quadruple of elementary switches connected in series called K1, K2, K1 ', K2'. In this quadruplet, a first elementary switch K2 and a second elementary switch K2 'are in the extreme position and a first elementary switch K1 and a second elementary switch K1' are in the middle position, the two elementary switches K1, K1 'in the middle position are directly connected to each other in a middle node M. In the quadruplet, an elementary switch in the extreme position is directly connected to a basic switch in the middle position. This connection makes it possible to define a first middle point M1 between the first elementary switch K2 in the extreme position and the first elementary switch K1 in the middle position and a second middle point M1 'between the second elementary switch K2' in the extreme position and the second elementary switch. K1 'in the middle position. The ends of the quadruple of switches K1, K2, K1 ', K2' in series are called M2 and M2 ', the end M2 being on the side of the elementary switch K2 and the end M2' being on the side of the elementary switch K2 '. An energy storage device C is connected between the first midpoint M1 and the second midpoint Ml '.
    [0014] Two switching functions are defined in the floating capacitor type cell 20. The first switching function F1 is used for controlling a first pair of switches comprising the first elementary switch K1 in the middle position and the second elementary switch in median position K1 '. The second switching function F2 is used for controlling a second pair of switches comprising the first elementary switch K2 in the extreme position and the second elementary switch K2 'in the extreme position. The two elementary switches of the same pair are always in complementary states, passing or blocking, to a value of dead time. This dead time will be explained later in connection with FIGS.
    [0015] The elementary switches K1, K2, Kr, K2 'of the floating capacitor type cell 20 are semiconductor switches and each comprise a controllable power electronic switch Tr1, Tr2, Tr1', Tr2 ', such as a solid state transistor. IGBT power (lnsulated Gate Bipolar Transistor) for example associated with a diode D1, D2, Dr, D2 'connected in antiparallel. Instead of IGBT transistors, other electronic power switches such as MOSFET transistors or others are conceivable. The switching function F1 is 1 when the elementary switch K1 is on and the elementary switch Kr is off and is 0 when the elementary switch K1 is off and the elementary switch Kr is on. The switching function F2 is 1 when the elementary switch K2 is on and the elementary switch K2 'is off and is 0 when the elementary switch K2 is off and the elementary switch K2' is on. Each of the base switch cells 21, 22 has a pair of elementary switches connected in series. They are referenced K3u, K3'u for the first base switching cell 21 and K3I, K3'I for the second base switching cell 22. In a pair, the two elementary switches have a midpoint. For the base switching cell 21, the midpoint is connected to the M2 end of the quadruple of the floating capacitor type cell 20. For the base switching cell 22, the midpoint is connected to the M2 end The quadruple of the floating capacitor type cell 20. Each base switch cell 21, 22 also has a first and a second end terminal. The first end terminal is called M3, the second end terminal is called M4 for the first base switch cell 21. The first end terminal is called M3 ', the second end terminal is called M4' for the second base switch cell 22. The first two end terminals M3 and M3 'form the two input terminals of the switching structure with four voltage levels, while the terminal M forms the output terminal in a DC / AC conversion operation.
    [0016] The elementary switches K3u, K3'u, K31, K3'I of the two basic switching cells 21, 22 are also semiconductor switches and each comprise a controllable power electronic switch, such as an IGBT power transistor (lnsulated Gate Bipolar Transistor), for example, associated with a diode connected in antiparallel. These diodes and power transistors have not been referenced so as not to overload the figure. Instead of IGBT transistors, other electronic power switches such as MOSFET transistors or others are also conceivable. A third switching function F3 is defined for controlling the elementary switches of the basic switching cells 21 and 22. The elementary switch K3u and the elementary switch K31 are controlled identically. The two elementary switches K3u, K3'u of the basic switching cell 21 are always in opposite states. It is the same for the elementary switches K31, K3'I of the basic switching cell 22.
    [0017] The switching function F3 is equal to 1 when the elementary switches K3u, K31 are on and the elementary switches K3'u, K3'I are blocked and equal to 0 when the elementary switches K3u, K31 are blocked and the elementary switches K3'u, K3 'Are passersby. The capacitive divider bridge 23 comprises a triplet of energy storage devices C100, C200 and C300 connected in series. The first energy storage device C100 is mounted across the first basic switching cell 21, between its end terminals M3, M4. The third energy storage device C300 is mounted across the second base switch cell 22, between its first and second end terminals M3 ', M4'. The second energy storage device C200 is connected between the first base switch cell 21 and the second base switch cell 22, between the second end terminals of these basic switch cells. The capacitive divider bridge 23 has two end terminals M3 and M'3 which are common respectively to the first base switch cell 21 and the second base switch cell 22.
    [0018] The energy storage devices of this switching structure at four voltage levels are selected from a capacitor, a battery, a fuel cell. The storage devices of the capacitive divider bridge 23 have the same storage capacity and the same voltage withstand.
    [0019] According to the states of the elementary switches of the switching structure of FIG. 2, the switching structure with four voltage levels can take eight different states which lead to four different voltage levels: 0, Ve / 3, 2 Ve / 3, Ve . The following table groups these eight different states numbered from 1 to 8.
    [0020] The switching function f evoked above depends on the switching functions Fi, F2 and F3. Condition Fi F2 F3 Vs 1 0 0 0 0 2 1 0 1 Ve / 3 3 0 1 0 Ve / 3 4 1 1 1 2 Ve / 3 5 0 0 0 Ve / 3 6 1 0 1 2 Ve / 3 7 0 1 0 2 Ve With the foregoing, the input voltage Ve which applies to the terminals of the capacitive divider bridge 23 is subdivided into three equal voltages E1, E2, E3 which each apply respectively to the terminals of the capacitor. one of the energy storage devices C100, C200, C300. The output voltage Vs is expressed by: Vs = (Fl + F2 + F3) Ve / 3 The voltage Vs is taken between the node M and the node M'3.
    [0021] FIG. 4.1 shows the appearance of the reference signal, also called the reference voltage Vref, which will serve in particular to determine the switching times of all the elementary switches of the switching structure with four voltage levels illustrated in FIG. This setpoint voltage Vref will be used in several comparisons, as will be seen later. It is sinusoidal and the voltage output voltage Vs, which is illustrated in FIG. 4.13, is in phase with this setpoint voltage Vref. FIG. 4.2 shows a chronogram of the Carrier Cari used with the setpoint voltage Vref to perform the switching function F1 and determine the switching times of the elementary switches K1, K1 'of the floating capacitor type cell 20. It is a triangular carrier whose amplitude is between -1 and +1. FIG. 4.3 shows a chronogram of the carrier Car2 used with the setpoint voltage Vref to perform the switching function F2 and to determine the switching times of the elementary switches K2, K2 'of the floating capacitor type cell 20. It is a triangular carrier whose amplitude is between -1 and +1. The two carriers Cari and car 2 are out of phase with a half-period of cutting. The switching frequency is much higher than the frequency of the output voltage Vs illustrated in FIG. 2. FIG. 4.4 shows a chronogram of the Car3 carrier used with the reference voltage Vref to perform the switching function F3. and determining the switching times of the elementary switches K3u, K3'u, K3I, K3'I of the basic switching cells 21, 22 It is a constant signal of amplitude 0.6. The switching moments of the elementary switches are obtained by comparison between the triangular carriers and constant and the reference signal Vref. It can be defined as a rule, for example, that a switching moment of an elementary switch occurs as soon as the reference signal is strictly greater than the carrier. It could of course be set as a rule that a switchover moment of an elementary switch occurs as soon as the setpoint signal is greater than or equal to the carrier. FIG. 4.5 is a timing diagram of the control signal of the elementary switch K1 of the floating capacitor type cell 20. It is a slot signal whose period is equal to that of the reference signal Vref. The elementary switch K1 is on as long as the setpoint voltage Vref is greater than the carrier Cari. FIG. 4.6 is a timing diagram of the control signal of the elementary switch Kr of the floating capacitor type cell 20. This is a a phase-locked signal in phase opposition with respect to the control signal of the elementary switch K1 to a near-dead time value. FIG. 4.7 is a timing chart of the control signal of the elementary switch K2 of the floating capacitor type cell 20. It is a square wave signal whose period is equal to that of the reference signal Vref. The elementary switch K2 is on as long as the setpoint voltage Vref is greater than the carrier Car2. FIG. 4.8 is a timing diagram of the control signal of the elementary switch K2 'of the cell of the floating capacitor type cell 20. It is a square wave signal in phase opposition with respect to the control signal of the elementary switch K2 to a near dead time value. FIG. 4.9 is a timing diagram of the control signal of the elementary switch K3u of the basic switching cell 21. It is a slot signal whose period is equal to that of the reference signal Vref. The elementary switch K3u is on as long as the setpoint voltage Vref is greater than the carrier Car3. It is only passing once per period of the reference signal Vref. FIG. 4.10 is a timing diagram of the control signal of the elementary switch K3'u of the basic switching cell 21. It is a phase-locked signal in opposition to the control signal of the elementary switch K3u at a near dead time value. FIG. 4.11 is a timing diagram of the control signal of the elementary switch K3I of the basic switching cell 22. It is a nested signal whose period is equal to that of the reference signal Vref. The elementary switch K3I is on as long as the setpoint voltage Vref is greater than the carrier Car3. It is only passing once per period of the reference signal Vref.
    [0022] FIG. 4.12 is a timing diagram of the control signal of the elementary switch K3'I of the basic switching cell 22. It is a square wave signal in phase opposition with respect to the control signal of the elementary switch K3I at a near dead time value.
    [0023] FIG. 4.13 shows a timing diagram of the output voltage Vs of the four-level switching structure of FIG. 2 on which the four voltage levels are clearly visible: OV, 2000V, 4000V, 6000V. We are now interested in an example of the converter arm B object of the invention having only two stages Etl, Et2 and therefore three switching structures at four voltage levels Ce10, Ce21, Ce22 as described in Figure 2. This arm is briefly described with reference to FIG. 3A. This arm is configured to perform a DC / AC conversion. In the following description for simplicity, energy storage devices have been called capacitors. This is not limiting. The single four-level voltage switching structure Ce10 of the one-rank stage Etl comprises a floating capacitor type cell formed of the extreme elementary switches T2, T2 ', medial elementary switches T1, T1', and capacitor. C12, a first basic switching cell with the elementary switches T3u and T3'u, a second basic switching cell with the elementary switches T3I and T3'1, a capacitive divider bridge with the capacitors C9, C10, C11. The capacitor C9 and the capacitor C10 have a common node N7, the capacitor C10 and the capacitor C11 have a common node N8. The first four-level voltage switching structure Ce21 of the second stage Et2 connected via the inductance Laux21 to the first base switching cell of the first stage Et1 at the node N6 comprises a floating capacitor type cell formed of the elementary switches. extremes T5u, T5'u, medial elementary switches T4u, T4'u, and capacitor C7, a first basic switching cell with the elementary switches T6u and T6'u, a second basic switching cell with the elementary switches T7u and T7'u, a capacitive divider bridge with capacitors C1, C2, C3. The capacitor C1 and the capacitor C2 have a common node Ni, the capacitor C2 and the capacitor C3 have a common node N2. The second four-level voltage switching structure Ce22 of the second stage Et2 connected via the inductance Laux22 at the node N9 to the second base switching cell of the first stage Et1 comprises a floating capacitor type cell formed of the elementary switches. extremes T5I, T5'1, medial elementary switches T4I, T4'1, and capacitor C8, a first basic switching cell with the elementary switches T7I and T7'1, a second basic switching cell with the elementary switches T6I and T6'1, a capacitive divider bridge with capacitors C4, C5, C6. The capacitor C3 and the capacitor C4 have a common node N3, the capacitor C5 and the capacitor C6 have a common node N5. The two capacitive divider capacitors C1-C3, C4-C6 of the second stage Et2 are connected in series.
    [0024] The voltage source VDC is intended to be connected between the end terminals of the two capacitive divider bridges. Thus the terminal E + corresponds to a terminal of the capacitor C1 not connected to another capacitor and the terminal E- corresponds to a terminal of the capacitor C6 not connected to another capacitor. Subsequently, for the sake of simplification, the reference VDC will represent both the voltage source and the voltage across this voltage source. The voltage VDC has been split into two groups of three equal voltages E1-E3 and E4-E6, the voltage E1 applying to the capacitor terminals C1, the voltage E2 applying to the capacitor terminals C2, the voltage E3 being applying to the capacitor terminals C3, the voltage E4 applied to the capacitor terminals C4, the voltage E5 applied to the capacitor terminals C5, the voltage E6 applied to the capacitor terminals C6. The voltage across the capacitor C7 is called E7. The voltage across the capacitor C8 is called E8. The voltage across the capacitor C12 is called E12.
    [0025] A floating voltage Ef is available between the terminals N6, N9 of the inductors Laux21, Laux22, on the switching structure side with four voltage levels of the first stage Et1. This floating voltage Ef is used as the input voltage of the first stage Et1, it is subdivided into three equal floating voltages E9, E10, E11 respectively applicable across capacitors C9, C10, C11. The conversion function which links the input voltage Ef and the output voltage Es of the four-level switching structure Ce10 of the first stage Et1 is called fc1. The input voltage Ef of the switching structure Ce10 corresponds to E9 + E10 + E11. The output voltage Es of the switching structure Ce10 is taken between the node N9 and the node S. The function fc2 is the conversion function which links the input voltage VDC / 2 and the output voltage VN3N6 of the first structure of switchover at four voltage levels Ce21 of the second stage Et2. The input voltage VDC / 2 of the switching structure at four voltage levels Ce21 corresponds to E1 + E2 + E3. The output voltage VN6N3 of the conversion structure Ce21 is taken between the node N3 and the node N6. Fc3 is the conversion function which links the input voltage VDC / 2 and the output voltage VE_Ng of the second switching structure C at four voltage levels e22 of the second stage Et2. The input voltage VDC / 2 of the switching structure at four voltage levels Ce22 corresponds to E4 + E5 + E6. The output voltage VNgE_ of the conversion structure Ce22 is taken between the node E- and the node N9. By choosing the components of the two voltage switching structures Ce21 and Ce22 of the second stage Et2 so that the voltages which apply across the two capacitive divider bridges are equal to VDC / 2 and by choosing functions of conversion fc2 and fc3 equal, the input voltages of each of the three switching structures at four voltage levels Ce10, Ce21, Ce22 are equal to VDC / 2. There is a balanced distribution of voltages between each switching structure at four voltage levels. These switching structures at four voltage levels then have to support only half of the input voltage, which corresponds to the fixed objective.
    [0026] On the arm illustrated in FIG. 3A, the commands of the elementary switches T3u and T3I are identical, the commands of the elementary switches T4u and T4I are identical, the commands of the elementary switches T5u and T5I are identical, the commands of the elementary switches T6u and T6I are identical, the commands of the elementary switches T7u and T7I are identical. Moreover, as stated above in the description of FIG. 2, the commands of the elementary switches T6u and T7u are identical and the commands of the elementary switches T6I and T7I are identical. With its three switching structures with four voltage levels, such an arm B has six switching functions F10, F20, F30, F40, F50, F60. The switching function F10 is used to control the pair of elementary switches T1, T1 'in the middle position of the floating capacitor type cell of the four-level voltage switching structure of the first stage Et1.
    [0027] The switching function F20 is used to control the pair of elementary switches T2, T2 'in the extreme position of the floating capacitor type cell of the four-level voltage switching structure of the first stage Et1. The switching function F30 is used for the control of the elementary switches T3u, T3'u, T3i, T3'I of the basic switching cells of the switching structure with four voltage levels of the first stage Et1. The switching function F40 is used for controlling the pairs of elementary switches T4u, T4'u, T4I, T4'I in the middle position of the two floating capacitor type cells located in the switching structures at four voltage levels. second floor Et2. The switching function F50 is used for controlling the pairs of elementary switches T5u, T5'u, T5I, T5'I in the extreme position of the two floating capacitor type cells located in the switching structures at four voltage levels of the second floor Et2.
    [0028] The switching function F60 is used for the control of the elementary switches T6u, T6'u, T7u, T7'u, T7I, T7'1, T6I, T6'I of the basic switching cells of the four-level switching structures. second stage voltage Et2. Reference can be made to the description of FIG. 2 with regard to the values taken by these switching functions as a function of the on or off state of the elementary switches. The converter of FIG. 3A makes it possible to obtain at the output 7 different voltage levels 0, VDC / 6, 2VDC / 6, 3VDC / 6, 4VDC / 6, 5VDC / 6, VDC between the nodes S and E- and 64 states. depending on the on or off state of its elementary switches.
    [0029] In the following table are grouped the 64 different states as well as the 7 corresponding voltage levels Vs at the output of the first stage Et1. The voltage Vs is taken between the node S and the terminal E-. The output voltage, Vs, is expressed by: Vs = [F10 + F20 + F30 + F40 + F50 + F60] VDC / 2 State F10 F20 F30 F40 F50 F60 Vs 1 0 0 0 0 0 0 0 VDC / 6 2 0 0 0 0 0 1 3 0 0 0 0 1 0 VDC / 6 4 0 0 0 0 1 1 2VDC / 6 5 0 0 0 1 0 0 VDC / 6 6 0 0 0 1 0 1 2VDC / 6 7 0 0 0 1 1 0 2VDC / 6 8 0 0 0 1 1 1 3VDC / 6 9 0 0 1 0 0 0 VDC / 6 10 0 0 1 0 0 1 2VDC / 6 11 0 0 1 0 1 0 2VDC / 6 12 0 0 1 0 1 1 3VDC / 6 13 0 0 1 1 0 0 2VDC / 6 14 0 0 1 1 0 1 3VDC / 6 0 0 1 1 1 0 VDC / 6 16 0 0 1 1 1 1 3VDC / 6 17 0 1 0 0 0 0 VDC / 6 18 0 1 0 0 0 1 2VDC / 6 19 0 1 0 0 1 0 2VDC / 6 20 0 1 0 0 1 1 2VDC / 6 21 0 1 0 1 0 0 2VDC / 6 22 0 1 0 1 0 1 3VDC / 6 23 0 1 0 1 1 0 3VDC / 6 24 0 1 0 1 1 1 4VDC / 6 25 0 1 1 0 0 0 2VDC / 6 26 0 1 1 0 0 1 3VDC / 6 27 0 1 1 0 1 0 3VDC / 6 28 0 1 1 0 1 1 4VDC / 6 29 0 1 1 1 0 0 3VDC / 6 30 0 1 1 1 0 1 4VDC / 6 31 0 1 1 1 1 0 4VDC / 6 32 0 1 1 1 1 1 4VDC / 6 33 1 0 0 0 0 0 VDC / 6 34 1 0 0 0 0 1 2VDC / 6 35 1 0 0 0 1 0 2VDC / 6 36 1 0 0 0 1 1 3VDC / 6 37 1 0 0 1 0 0 2VDC / 6 38 1 0 0 1 0 1 3VDC / 6 39 1 0 0 1 1 0 3VDC / 6 40 1 0 0 1 1 1 4VDC / 6 41 1 0 1 0 0 0 2VDC / 6 42 1 0 1 0 0 1 3VDC / 6 43 1 0 1 0 1 0 3VDC / 6 44 1 0 1 0 1 1 4VDC / 6 45 1 0 1 1 0 0 3VDC / 6 46 1 0 1 1 0 1 4VDC / 6 47 1 0 1 1 1 0 4VDC / 6 48 1 0 1 1 1 1 4VDC / 6 49 1 1 0 0 0 0 2VDC / 6 50 1 1 0 0 0 1 3VDC / 6 51 1 1 0 0 1 0 3VDC / 6 52 1 1 0 0 1 1 4VDC / 6 53 1 1 0 1 0 0 3VDC / 6 54 1 1 0 1 0 1 4VDC / 6 55 1 1 0 1 1 0 4VDC / 6 56 1 1 0 1 1 1 4VDC / 6 57 1 1 1 0 0 0 3VDC / 6 58 1 1 1 0 0 1 4VDC / 6 59 1 1 1 0 1 0 4VDC / 6 60 1 1 1 0 1 1 5VDC / 6 61 1 1 1 1 0 0 4VDC / 6 62 1 1 1 1 0 1 5VDC / 6 63 1 1 1 1 1 0 5VDC / 6 64 1 1 1 1 1 1 VDC By analyzing this table, one realizes that several states and thus several configurations of the elementary switches lead to the same voltage Vs. This degree of freedom is interesting to maintain the balancing of floating tensions. This degree of freedom will be used to maintain the balancing of capacitor voltages. FIG. 5.1 shows the shape of the setpoint voltage Vref which will serve in particular to determine the switching times of all the elementary switches of the arm B illustrated in FIG. 3A. It corresponds to that shown in Figure 4.1. It is in phase with the voltage Vs at the output of the stage Et1 taken between the node S and the node E-, illustrated in FIG. 5.14. FIG. 5.2 shows a chronogram of the Car10 carrier used with the reference voltage Vref to perform the switching function F10 and to determine the switching times of the elementary switches T1, T1 'of the switching structure with four voltage levels Ce10 of the first floor Et1. It is a triangular carrier whose amplitude is between -1 and +1. FIG. 5.3 shows a chronogram of the carrier Car20 used with the setpoint voltage Vref for performing the switching function F20 and determining the switching times of the elementary switches T2, T2 'at the end position of the capacitor type cell Floating of the four-level voltage switching structure Ce10 of the first stage Et1. It is a triangular carrier whose amplitude is between -1 and +1. The Car20 carrier is shifted n or 1 / 2fsw from the Car10 carrier. The magnitude fsw represents the switching frequency, it is much higher than the frequency of the output voltage Vs shown in Figure 5.14. FIG. 5.4 shows a chronogram of the carrier Car30 used with the setpoint voltage Vref to perform the switching function F30 and to determine the switching times of the elementary switches T3u, T3'u, T3I, T3'I of the cells of FIG. basic switching of the switching structure at four voltage levels Ce10 of the first stage Et1. The Car30 carrier is shifted by n / 2 or 1 / fsw from the Car10 carrier. FIG. 5.5 shows a chronogram of the carrier Car40 used with the setpoint voltage Vref to perform the switching function F40 and to determine the switching times of the elementary switches T4u, T4'u, T4I, T4'I in the median position. two floating capacitor-type cells located in the four-level voltage switching structures Ce21, Ce22 of the second stage Et2. It is a constant signal of amplitude -2/3. FIG. 5.6 shows a chronogram of the carrier Car50 used with the setpoint voltage Vref to perform the switching function F50 and to determine the switching times of the elementary switches T5u, T5'u, T5I, T5'I in the extreme position two floating capacitor-type cells located in the four-level voltage switching structures Ce21, Ce22 of the second stage Et2. It is a constant signal of zero amplitude.
    [0030] FIG. 5.7 shows a chronogram of the carrier Car60 used with the setpoint voltage Vref to perform the switching function F60 and to determine the switching times of the elementary switches T6u, T6'u, T7u, T7'u, T7I, T7'1, T6I, T6'I basic switching cells of the switching structures at four voltage levels Ce21, Ce22. It is a constant signal of amplitude +2/3. The switching moments of the elementary switches are obtained by comparison between the triangular and constant carriers and the reference signal Vref. It can be defined as a rule, for example, that a switching moment of an elementary switch occurs as soon as the reference signal is strictly greater than the carrier. It could of course be set as a rule that a switchover moment of an elementary switch occurs as soon as the setpoint signal is greater than or equal to the carrier. Figure 5.8 is a timing diagram of the switching function F10 used for controlling the pair of elementary switches T1, T1 'in the center position of the floating capacitor type cell of the four-voltage switching structure of the first one. floor Et1. It is a niche signal whose period is equal to that of the switching frequency fsw. The switching function F10 is at a level 1 as long as the setpoint voltage Vref is greater than the carrier Ca r10.
    [0031] The controls of the two switches T1 and T1 'of the pair are obtained from the switching function F10. The control of the elementary switch T1 is similar to the switching function F10, with the difference that the rising edge of the slots is delayed by a dead time with respect to the rising edge of the slots of the switching function F10. On the other hand, the falling edge of the slots for the control of the elementary switch T1 is synchronized with that of the slots of the switching function F10. The control of the elementary switch T1 'is similar to a function complementary to the switching function F10, with the difference that the rising edge of the slots is delayed by the dead time with respect to the rising edge of the slots of the complementary function.
    [0032] On the other hand, the falling edge of the slots for the control of the elementary switch T1 'is synchronized with that of the slots of the function complementary to the switching function F10. The two elementary switches T1, T1 'of the pair are in states complementary to the value of the dead time. FIG. 5.9 is a timing diagram of the switching function F20 used for controlling the pair of elementary switches T2, T2 'of the four-level voltage switching structure Ce10 of the first stage Et1. It is a niche signal whose period is equal to that of the switching frequency fsw. The switching function F20 is at a level 1 as long as the setpoint voltage Vref is higher than the carrier Car20. What has just been explained about the control of the elementary switches T1, T'1 and the dead times applies for the control of the pair of elementary switches T2, T'2 on the basis of the signal in slots of the F20 switching function. The two elementary switches T2, T2 'of the pair are in states complementary to the value of the near dead time. FIG. 5.10 is a timing diagram of the switching function F30 used for controlling the pairs of elementary switches (T3u, T3'u) and (T3I, T3'1) of the basic switching cells of the four-way switching structure. Ce10 voltage levels of the first stage Et1. It is a niche signal whose period is equal to that of the switching frequency fsw. The switching function F30 is at a level 1 as long as the setpoint voltage Vref is higher than the carrier Car30. What has just been explained about the control of the elementary switches T1, T'1 and dead times applies for the control of the pairs of elementary switches (T3u, T3'u) and (T3I, T3 '1) on the basis of the slot signal of the switching function F30. The two elementary switches of each pair (T3u, T3'u) and (T3I, T3'1) are in states complementary to the value of the near dead time.
    [0033] FIG. 5.11 is a timing diagram of the switching function F40 used for controlling the pairs of elementary switches (T4u, T4'u) and (T4I, T4'1) in the middle position of the two floating capacitor type cells located in the switching structures at four voltage levels Ce21, Ce22 of the second stage Et2. It is a slot signal whose period is equal to that of the set signal Vref. The switching function F40 is at a level 1 as long as the setpoint voltage Vref is greater than the carrier Car40. What has just been explained about the control of the elementary switches T1, T'1 and dead times applies for the control of the pairs of elementary switches (T4u, T4'u) and (T4I, T4 '1) based on the slot signal of the switching function F40. The two elementary switches of each pair (T4u, T4'u) and (T4I, T4'1) are in states complementary to the value of the dead time. FIG. 5.12 is a timing diagram of the switching function F50 used for controlling the pairs of elementary switches (T5u, T5'u) and (T5I, T5'1) in the extreme position of the two floating capacitor type cells located in the switching structures at four voltage levels Ce21, Ce22 of the second stage Et2. It is a slot signal whose period is equal to that of the set signal Vref. The switching function F50 is at a level 1 as long as the setpoint voltage Vref is higher than the carrier Car50. What has just been explained about the control of the elementary switches T1, T'1 and dead times applies for the control of the pairs of elementary switches (T5u, T5'u) and (T5I, T5 '1) on the basis of the slot signal of the switching function F50. The two elementary switches of each pair (T5u, T5'u) and (T5I, T5'1) are in states complementary to the value of the dead time.
    [0034] Figure 5.13 is a timing diagram of the switching function F60 used to control the pairs of elementary switches (T6u, T6'u), (T7u, T7'u) and (T6I, T6'1), (T7I, T7 1) base switching cells of the switching structures at four voltage levels Ce21, Ce22 of the second stage Et2. It is a slot signal whose period is equal to that of the set signal Vref. The switching function F60 is at a level 1 as long as the setpoint voltage Vref is greater than the carrier Car60. What has just been explained about the control of the elementary switches T1, T'1 and the dead times applies for the control of the pairs of elementary switches (T6u, T6'u), (T7u, T7 u) and (T61, T6'1), (T71, T7'1) on the basis of the square wave signal of the switching function F60. The two elementary switches of each pair (T6u, T6'u), (T7u, T7'u) and (T61, T6'1), (T71, T7'1) are in states complementary to the value of the dead time close to . FIG. 5.14 shows a timing diagram of the output voltage Vs of the converter arm illustrated in FIG. 3A on which the seven voltage levels are clearly visible: OV, 1000V, 2000V, 3000V, 4000V, 5000V, 6000V. The voltage varies in stages from 1000V in the example described. We will not describe in more detail the converter arm of Figure 3B. It has the same structure as that of FIG. 3A except that the node S which corresponded to the output in FIG. 3A is now called node E since it now corresponds to the input. It is intended to be connected to an AC power source (not shown). Similarly, the input terminals E +, E- in FIG. 3A, at which the voltage source VDC is to be connected, are now called S + and S-in FIG. 3B, they correspond to the output of the converter and are intended to to supply a DC voltage source (not shown). In rectifier operation, a current IE flows from the node E to the output terminals S + and S- while in the inverter operation of the currents 1E + and 1E- circulated terminals E +, E- to the node S. In rectifying operation of the currents IS + and IS- appearing at the terminals S + and S- are output currents, and in inverter operation the output current called Is appears at the node S. Several types of control can be used to make passersby or blocked the elementary switches and thus ensure the conversion. Traditional control based on PWM pulse width modulation can be used. Of course, the corresponding elementary switches of the two switching structures with four voltage levels Ce21, Ce22 of the second stage Et2 are controlled in the same way.
    [0035] In Figures 3A, 3B, there is shown a single DC voltage source VDC. It is understood that this DC voltage source VDC could consist of several independent DC voltage sources, each mounted across at least one energy storage device C1 to C6. These DC voltage sources can be rectifiers. This configuration is interesting in a non-reversible conversion system with a transformer with several windings. Referring to FIG. 6, there is shown a speed variator which comprises in cascade a converter 1 object of the invention operating as an AC / DC rectifier and a converter 2 object of the invention operating in DC / AC inverter by placing between the two, on the DC side a voltage source 3 such as an energy storage device. The rectifier 1 is intended to be connected as input to an alternating electrical supply network Re comparable to a current source. The inverter 2 is intended to be connected at the output to a user device similar to a current source such as an AC motor Mo. FIG. 6 illustrates an example where the two converters 1 and 2 are three-phase. They would each have three arms such as those shown in Figures 3A, 3B. The multi-level converter object of the invention is much more compact and lightweight than the converters of the prior art with transformer. It is much easier to install and transport. It can be used with or without isolation transformer. It minimizes the harmonic pollution of the power grid and the correction of the power factor when using a regenerative active rectifier. The converter object of the invention is compatible with the AC network up to 13.8 kV given the voltage withstand of existing semiconductor components today, whether it operates as inverter or rectifier. Therefore, it is not mandatory to use a voltage level matching transformer, conventionally used solution. The DC / AC converter object of the invention can be used to power asynchronous or synchronous motor parks whether they are new or existing.
    [0036] The converter object of the invention has a modular structure through the use of switching structures at four voltage levels as those of Figure 2. As a result, maintenance costs are reduced and reliability is good.
    [0037] The feed waveform of the load is of good quality and the surges on the power source side are limited and are only related to the connection cables. The common DC bus can be used to power several inverters object of the invention.
    [0038] CITES DOCUMENTS [1] "A novel hybrid-clamped four-level converters", Kui Wang et al, Applied Power Electronics Conference and Exhibition (APEC), 2012 Twenty-Seventh Annual IEEE, 5-9 Feb. 2012, pages 2442-2447. [2] "Voltage Balancing Control of a Four-Level Hybrid-Clamped Inverter Using Modified Phase-Shifted PWM" Kui Wang et al, Power Electronics and Applications (EPE), 2013 15th European Conference on Power Electronics Applications, 2-6 Sept 2013, pages 1-10.
    权利要求:
    Claims (10)
    [0001]
    REVENDICATIONS1. Multi-level converter comprising at least one arm (B) consisting of several stages of rank one to n (n integer greater than one) (Et1, Et2, ...., Etn) cascaded, the tier 1 stage (Et1) being intended to be connected to a current source (1) and the n-rank stage (Etn) being intended to be connected to a voltage source (VDC), characterized that the tier one stage (Et1 ) comprises a single switching structure with four voltage levels (Ce10) and a stage of rank i (i lying between two and n) comprises i switching structures with four identical voltage levels (Cell, Cei2, ... Ceii). in series, each of these switching structures comprising a floating capacitor type cell (T1, T2, Tr, T2 ', C12) with three voltage levels comprising a quadruple of elementary switches in series (T1, T2, T1 ', T2') having a middle node (S), two base cells (T3u, T3'u, T31, T3'1) each formed of a pair of interrupts elementary probes (T3u, T3'u, T31, T3'1) in series having two extreme terminals (N6, N7; N8, N9) and a center point and a capacitive divider bridge (C9, C10, C11) having two ends formed of a triplet of energy storage devices (C9, C10, C11) connected in series, two of which are energy storage (C9, C11) in extreme position, each end energy storage device (C9, C11) being connected to the end terminals (N6, N9) of a different basic switching cell, a point middle of each basic switching cell being connected to a different end of the quadruple of elementary switches (T1, T2, T1 ', T2'), the middle node of each floating capacitor type cell of the rank tier i , being connected at one end of the capacitive divider bridge of a switching structure with four voltage levels of the rank tier i-1.
    [0002]
    2. Multi-level converter according to claim 1, wherein the energy storage devices (C9, C10, C11) of the same capacitive divider bridge have the same energy storage capacity and the same voltage withstand.
    [0003]
    A multi-level converter according to one of claims 1 or 2, wherein the middle node of at least one floating capacitor type cell of rank stage i is connected to an end of the capacitive divider bridge of a switching structure of the rank i-1 stage via an inductor (Laux21, Laux22).
    [0004]
    4. Multilevel converter according to claim 3, wherein when several inductances connect the stage of rank i to the stage of rank i-1, these inductances have the same value.
    [0005]
    5. Multilevel converter according to one of claims 1 to 4, wherein the two pairs of elementary switches (T3u, T3'u, T3I, T3'1) of the two basic switching cells of the same floor have the same switching function.
    [0006]
    6. Multi-level converter according to one of claims 1 to 5, wherein in operation, the elementary switches of the same pair are in complementary states to a value of dead time.
    [0007]
    Multilevel converter according to one of claims 1 to 6, wherein in the quadruple of elementary switches (T1, T2, T1 ', T2') of a floating capacitor type cell two are in the extreme position. and two are in the middle position, the two elementary switches (T2, T2 ') in the extreme position are always in complementary states and the two elementary switches (T1, T1') in the middle position are always in complementary states, one being passing and the other being blocked.
    [0008]
    8. multi-level converter according to one of claims 1 to 7, wherein the elementary switches (T1, T2, T1 ', T2') each comprise a controllable power electronic switch with a diode connected antiparallel.
    [0009]
    9. Multi-level converter according to one of claims 1 to 8, wherein the energy storage devices (C1-C12) are selected from a capacitor, a battery, a fuel cell.
    [0010]
    10. Variable speed drive comprising a cascade with a converter (1) according to one of the preceding claims operating as an AC / DC rectifier and a converter (2) according to one of the preceding claims operating in DC / AC inverter, interconnected by their continuous sides via a voltage source (3).
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    RU2015117057A|2016-11-27|
    ES2735723T3|2019-12-20|
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    法律状态:
    2015-04-17| PLFP| Fee payment|Year of fee payment: 2 |
    2015-11-20| PLSC| Publication of the preliminary search report|Effective date: 20151120 |
    2016-04-11| PLFP| Fee payment|Year of fee payment: 3 |
    2017-04-20| PLFP| Fee payment|Year of fee payment: 4 |
    2018-04-06| PLFP| Fee payment|Year of fee payment: 5 |
    2019-04-05| PLFP| Fee payment|Year of fee payment: 6 |
    2021-02-12| ST| Notification of lapse|Effective date: 20210105 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1454238A|FR3021173B1|2014-05-13|2014-05-13|MULTI-LEVEL POWER CONVERTER|FR1454238A| FR3021173B1|2014-05-13|2014-05-13|MULTI-LEVEL POWER CONVERTER|
    US14/683,431| US9571004B2|2014-05-13|2015-04-10|Multi-level power converter|
    ES15163313T| ES2735723T3|2014-05-13|2015-04-13|Multilevel Power Converter|
    EP15163313.8A| EP2945272B1|2014-05-13|2015-04-13|Multi-level power concerter|
    RU2015117057A| RU2663822C2|2014-05-13|2015-05-05|Multilevel power converter|
    BR102015010508-8A| BR102015010508B1|2014-05-13|2015-05-08|Multilevel power converter and variable speed drive|
    CN201510236125.9A| CN105099244B|2014-05-13|2015-05-11|More level power converters|
    AU2015202564A| AU2015202564B2|2014-05-13|2015-05-12|Multi-level power converter|
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