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    • 专利摘要:
    The invention relates to a photodiode array (300) comprising: a useful layer (10) of CdxHg1-xTe; first doped zones (151) each forming a PN junction (15) with a second doped zone (152) surrounding the first doped zones. According to the invention, the matrix (300) comprises, between two PN junctions (15), regions (14) having a cadmium concentration gradient decreasing from the upper face (108) to the lower face (109) of the layer useful. The invention also relates to a method for producing such a matrix of photodiodes.
    公开号:FR3020176A1
    申请号:FR1400950
    申请日:2014-04-22
    公开日:2015-10-23
    发明作者:Laurent Mollard；Guillaume Bourgeois；Gerard Destefanis
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] S55100 / SD-T 1 MATRICE OF PHOTODIODS IN CdHgTe. TECHNICAL FIELD The present invention relates to the field of CdHgTe infrared photodiodes used to detect infrared radiation. STATE OF THE PRIOR ART Various types of photodiode arrays are known in the prior art, in particular photodiode arrays made in a semiconductor material layer made of an alloy of cadmium, mercury and tellurium Cd, Cligi, Te , with x a real between 0 and 1, the terminals being excluded. Throughout the text, this entire layer of semiconductor material is called "useful layer". Throughout the text, the useful layer designates the entire semiconductor material layer, including the photon absorption region having a first type of N or P doping, the PN junctions, and the so-called doped zones having a second type of doping. P or N doping. These photodiode arrays are used for example in the spatial field, for the detection of infrared radiation, in particular the Middle Infrared (MWIR), corresponding to wavelengths. between 4 gm and 5 wn at 80 K) and far infrared (or LWIR for English "Long Wave InfraRed" corresponding to wavelengths greater than 8 pm to 80 K).
    [0002] They can also be used for the detection of SWIR "Small Wave Infrared" corresponding to wavelengths between 2 and 3μm at 80 K, and S55100 / SD-T 2 VLWIR "Very Long Wave Infrared" corresponding to lengths of Waves greater than 12 μm to 80 K. For example, rectangular matrices comprising 640 × 5 12 photodiodes are produced for a step 15 μm (width of a photodiode).
    [0003] The quality of a photodiode matrix can be quantified by different indicators. One of these indicators is for example its modulation transfer function (MTF). It is generally represented by a graph representing a ratio between a measured contrast and a theoretical contrast, as a function of a frequency (here the inverse of the pitch of the photodiode array). The FTM illustrates the ability of the photodiode array to faithfully transcribe an incident photon distribution, in the form of a current map measured on the photodiodes. It is therefore advantageous that a matrix of photodiodes has a good FTM, so that it offers an image that faithfully transcribes reality. Another indicator is its current called dark current. The dark current is the residual electric current of a photodetector in the absence of illuminance. An object of the present invention is to provide a matrix of photodiodes CdxHgi, Te having an improved quality with respect to at least one of the indicators commonly used to quantify this quality. Another object of the present invention is to provide a method of manufacturing such a matrix of photodiodes.
    [0004] DISCLOSURE OF THE INVENTION This objective is achieved with a matrix of photodiodes comprising: S55100 / SD-T 3 a so-called useful layer made of a cadmium, mercury and tellurium semiconductor alloy of Cd, Hgi, Te type, the useful layer having an upper face and a lower face; at least two first doped zones located in the useful layer, each forming a PN junction with a second doped zone surrounding the first doped zones, the PN junctions flush with the upper face of the useful layer. According to the invention, characterized in that the matrix comprises at least one region situated between two adjacent PN junctions and having a cadmium concentration gradient decreasing from the upper face to the lower face of the useful layer. Advantageously, the average concentration of cadmium in said region is greater than the average concentration of cadmium in the rest of the useful layer. According to a first embodiment, said region extends between two PN junctions, and outside each first doped zone. According to this first embodiment, said region can extend into the useful layer more deeply than the first doped zones.
    [0005] According to a second embodiment, said region extends between two PN junctions, and in a higher peripheral volume of each of the first doped zones. According to this second embodiment, said region may extend in the useful layer less deeply than the first doped zones.
    [0006] Said region may extend in a first zone doped on less than half of the volume thereof. According to a third embodiment, said region has: a first portion extending outside the first doped zones; and S55100 / SD-T 4 - a second portion extending in an upper peripheral volume of at least one first doped zone; the first portion extending deeper into the useful layer than the second portion, and the first portion being surrounded by the second portion.
    [0007] The first doped zone is advantageously P-doped by arsenic atoms. The invention also relates to a method of manufacturing a matrix of photodiodes according to the invention, comprising the following steps: making, on the upper face of the useful layer, a so-called structured layer having at least one through opening, and having a cadmium concentration greater than the cadmium concentration of the useful layer; annealing the useful layer covered with the structured layer, diffusing the cadmium atoms of the structured layer, from the structured layer to the useful layer; performing at least two PN junctions in the useful layer. The production of a structured layer may involve: depositing a reservoir layer on the upper face of the useful layer; and etching at least one through opening in the reservoir layer, the etching being a chemical etching. The steps of producing a structured and annealed layer advantageously form a production cycle, and at least two manufacturing cycles are carried out. The step of performing PN junctions can implement an ion implantation of arsenic.
    [0008] S55100 / SD-T Preferably, annealing is carried out at a temperature between 100 ° C and 500 ° C. The annealing is advantageously carried out for a period of between 1 h and 100 h. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIG. 1 schematically illustrates a first embodiment method embodiment according to the invention; FIG. 2 schematically illustrates a second method embodiment of the invention; FIG. 3 schematically illustrates a first embodiment of a photodiode array according to the invention; FIG. 4 schematically illustrates a second photodiode matrix embodiment according to the invention; and FIG. 5 schematically illustrates a third photodiode matrix embodiment according to the invention.
    [0009] DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS For the sake of clarity, a method of manufacturing a photodiode array according to the invention will first of all be illustrated. The steps of such a method have been illustrated schematically in FIG. 1.
    [0010] Initially, a useful layer 10 made of a semiconductor material made of an alloy of cadmium, mercury and tellurium CdxHgi_je, with x a real between 0 and 1, the terminals being excluded. Typically x is between S55100 / SD-T 0.2 and 0.4, for example x = 0.22. In this example, the composition of the useful layer 10 is initially constant in space. For example, we will try to detect a radiation in the mean infrared said MWIR, which corresponds to a cadmium concentration x = 0.3. In a variant, it is desired to detect a radiation in the far infrared known as LWIR, which corresponds to a cadmium concentration defined by x = 0.22. This useful layer 10 is produced here on a substrate 11, for example a substrate made of an alloy of cadmium, zinc, tellurium. Such an alloy provides a very advantageous mesh arrangement of the useful layer material with the substrate 11.
    [0011] The substrate 11 is advantageously transparent to the wavelengths that it is desired to detect. According to a variant not shown, the substrate is separated from the useful layer before, during or after the implementation of the method according to the invention. The useful layer 10 typically has a thickness of between 0.1 gm and 20 gm, for example 15 pm. The substrate 11 has a thickness of the order of 500 gm. For the sake of clarity of the figures, the thickness of the substrate 11 is undersized in the figures. The useful layer is advantageously made on the substrate 11 by a so-called liquid phase epitaxy technique. Liquid phase epitaxy is a crystal growth technique in which the substrate 11 is brought into contact with a liquid phase of a desired element (here Cd, (1-Ig1, Te) which crystallizes on the substrate Alternatively, the useful layer can be made on the substrate 11 by a technique called molecular beam epitaxy. <br /> <br /> Molecular jet epitaxy is a crystal growth technique in which the elements to be deposited on the substrate 11 They are evaporated and then deposited on the substrate, or any other technique for depositing a crystalline layer on a substrate, for example a chemical vapor deposition, may be considered.
    [0012] S55100 / SD-T 7 The useful layer has for example a parallelepiped shape, in particular a rectangular parallelepiped. In this useful layer is defined an axis z defining the axis of the depth, starting from the upper face 108, and connecting the faces 108 and 109. The face 109 is a lower face, in contact with the substrate 11. The face 108 is an upper face of the opposite side to the lower face 109. Step 100: In step 100, is deposited on the upper face 108 of the useful layer 10 a layer called reservoir layer 12, one of which is cadmium and having a cadmium concentration greater than the cadmium concentration of the useful layer 10. The reservoir layer 12 has a thickness of the order of one micrometer, for example between 0.1 μm and 2 μm, in particular 1 μm.
    [0013] The deposition of the reservoir layer 12 is carried out by any known thin-layer deposition technique. The reservoir layer is made of a binary, ternary, quaternary or even more material, especially from the elements of the columns II and VI: for example and in a nonlimiting manner CdS, CdSe, CdTe, CdZnSe, CdMnSSe ...
    [0014] The reservoir layer 12 thus forms a uniform layer that covers the entire upper face 108 of the useful layer 10. Step 101: The reservoir layer 12 is then etched so as to form through-openings 120. This structuring stage is called or texturing of the reservoir layer 12. The reservoir layer after structuring forms a so-called structured layer 121. The structured layer 121 thus has the same cadmium concentration as the reservoir layer.
    [0015] S55100 / SD-T In the example shown in FIG. 1, the structured layer 121 consists of studs 122 or lines, for example having a width Li 1 of 1 and distributed in a square mesh having a pitch P1 of 15 [lm . The structured layer can draw a mesh having any type of elemental shape, for example a round, a square, or any other shape. By abuse of language, we can say that each shape is intended to surround a photodiode (see below). Each shape intended to surround a photodiode may be continuous or discontinuous (for example continuous round or dashed). The structured layer may also be such that only certain photodiodes will be surrounded by an elemental shape. This structured layer may also be of variable width from one place to another along a shape intended to surround a photodiode, for example from a width of 2 μm to 4 μm. Depending on the desired characteristics of the structure, the skilled person will adapt the conditions of deposition and etching. Step 101 is broken down for example into two steps 101a and 101b. Step 101a: In a first step 101a, depositing a layer of resin on the reservoir layer 12, then is etched in this resin through openings 130. It is preferably a photolithography etching. Thus, a resin mask 13 is formed on the reservoir layer 12. Step 101b: In a second step 101b, the reservoir layer 12 is etched through the resin mask 13. Thus, the reservoir layer 12 is etched only at locations not covered by the resin. The etching is advantageously a chemical etching, typically a chemical etching using a bromine solution (Br2 bromine solution).
    [0016] S55100 / SD-T 9 The engraving depth is adjusted by adjusting the duration of the chemical etching. In practice, the reservoir layer may have a different aspect of the useful layer, so it is possible to identify optically the moment from which the chemical etching can be stopped.
    [0017] Other methods of structuring the cadmium reservoir are also conceivable such as a selective chemical etching stopping on the useful layer or dry etching of ionic or plasma type. Any other technique of structuring the tank is also possible. The following steps: - deposit 100, on the upper face 108 of the useful layer, a reservoir layer 12 having a cadmium concentration greater than the average cadmium concentration of the useful layer 10; and etching 101 of at least one through opening 120 in the reservoir layer, thus forming a so-called structured layer 121; together form a step of producing, on said upper face 108, a structured layer 121 having at least one through opening 120, and a cadmium concentration greater than the average cadmium concentration in the useful layer 10.
    [0018] It is also conceivable to make the structured layer 121 by a lift-off technology. This involves, for example, depositing a structured layer of resin on the upper face 108, and covering the whole by the reservoir layer 12. The reservoir layer is therefore deposited on the resin, where the resin is present, and on the useful layer 10 at the through openings in the resin. By removing the resin, the structured layer 121 is obtained. Step 102: The assembly formed by the useful layer 10 and the structured layer 121 is then annealed. This annealing will, for example, be carried out at a temperature S55100 / SD-T. Between 100 ° C and 500 ° C, preferably between 300 ° C and 500 ° C, and for a period ranging from a few minutes to several hours, for example between 1h and 40h. In the example shown in FIG. 1, the annealing corresponds to heating at 430 ° for 50 h.
    [0019] For all the necessary anneals, the skilled person will be able to carry out annealing under conditions of pressure and temperature which limit the degradation of the material. During this annealing, the cadmium atoms of the structured layer 121 will diffuse to the useful layer 10. We can therefore speak of a diffusion annealing.
    [0020] Thus, in the useful layer, regions 14 each having a descending cadmium concentration gradient are formed from the upper face 108 to the lower face 109 of the useful layer. The graphs 102a and 102b show a concentration of cadmium Cd in the useful layer (abscissa axis) as a function of the depth in the useful layer (ordinate axis). The graph 102b corresponds to a section in the useful layer along the axis BB 'not passing through a region 14 as described above. It is clear that the cadmium concentration then has a constant value, and corresponding to the initial cadmium concentration of the useful layer.
    [0021] The graph 102a corresponds to a section in the useful layer along the axis AA 'passing through a region 14 as described above. The cadmium concentration has a gradually decreasing profile from the upper face 108 and towards the lower face 109. For example, this gradient takes a maximum value defined by x = 0.5 in CdXHgi_Je, and a minimum value defined by x = 0.22 and corresponding to the initial cadmium concentration of the useful layer. The gradient, and therefore the region 14, extends into the useful layer up to A. Throughout the text, a constant concentration of cadmium does not define a concentration gradient.
    [0022] S55100 / SD-T 11 Surfaces can be considered in the useful layer, parallel to the upper face 108, and defined by a depth z in the useful layer. Having passed a predetermined depth z = zo (see FIG. 3) in the useful layer 10, the intersection of such a surface with the regions 14 has a mean cadmium concentration greater than the average cadmium concentration of the intersection of this same surface with the rest of the useful layer. In particular, zo = 0. In other words, the average cadmium concentration in the regions 14 is greater than the average cadmium concentration in the remainder of the useful layer, especially in a region intended to form an absorption region of the useful layer, in which the photons at the wavelength that one wishes to detect will form minority carriers. Regions 14 "hetero-3D structure" can be named. The regions 14 all open on the upper face 108.
    [0023] Depending on the desired characteristics of the profile of the cadmium concentration gradient in the regions 14, those skilled in the art will be able to adapt the temperature and the duration of the annealing. The diffusion of atoms, in particular of cadmium atoms, can be approximated by a standard Fick diffusion law: 2 1 tn (z, t) rD i 4Dt, with - n (z, t) the volume concentration in atomic atoms. a given species as a function of depth z and time t; - the duration of the annealing; Ea - D the diffusion coefficient of the atom, with D = Doe-kT, T the temperature of the annealing and Ea the activation energy of the diffusion (quantity of energy necessary to start the diffusion process of the atoms) . It can be seen in the graph 102a that the cadmium concentration gradient follows a decreasing curve starting from the upper face 108 (point A) S55100 / SD-T 12 and toward the lower face 109 (to the point A ". ) step 103: During step 103, at least two PN junctions 15 are made in the useful layer, each PN junction forms a photodiode, the PN junctions are made between the regions 14, by for example by ion implantation between pads 122. Each photodiode corresponds to a first doped zone 151. Each PN junction separates a first doped zone 151 from a second doped zone 152 common to each of the photodiodes, while the second doped zone 152 surrounds the first doped zone 152. doped zones 151, and has a different type of doping (N or P) Each PN junction forms a convex surface in the useful layer between one of the first doped zones 151 and the second doped zone 15 2.
    [0024] The PN junctions are flush on the upper face 108 of the useful layer. It will be possible to envisage making a PN junction according to one of the many techniques known in the prior art. Advantageously, a P-doped zone (excess "holes", or in other words an electron defect) is produced in an N-doped material (excess of electrons). For this purpose, a dopant element P is implanted in the useful layer, preferably arsenic. An annealing is then carried out at around 400 ° C. to activate the dopant P. This annealing creates mercury gaps throughout the useful layer 10. This results in a strongly doped area P (thanks to the implantation of arsenic) and a weakly doped zone P (because of the mercury gaps). An annealing is then carried out at about 220 ° C. under saturating mercury pressure to fill the mercury gaps. The weakly-doped area P becomes N-doped. The heavily doped area P is referenced 151 and corresponds to a first doped zone according to the invention. The doped zone N is referenced 152 and corresponds to the second doped zone according to the invention. S55100 / SD-T 3020176 13 The doping density in the second doped zone 152 is then of the order of 1.1016 atoms / cm3. The doping density in the first doped zones 151 is of the order of 1018 atoms / cm3. In a variant, a heavily doped zone N (first doped zone 151) can be produced in a doped material P (second doped zone 152). For this, an annealing is carried out to adjust the level of mercury gaps, so as to dope P the remainder of the useful layer and then implanting an N doping element in the useful layer, preferably boron. These first two exemplary embodiments of a PN junction correspond to an ion implantation. A photodiode having a planar structure is thus obtained, without an etching step capable of impacting the dark current. In a variant, an avalanche photodiode can be produced in the useful layer. Annealing is first carried out to adjust the level of mercury gaps so as to dope the useful layer and then, by a suitable technological method, an N doped zone is created. Any other type of diode could be produced. The step 103 of producing PN junctions is advantageously implemented after the regions 14 are made. However, it is also possible to envisage carrying out the PN junctions before making the regions 14, in particular in the case where the first doped zones 151 The diffusion annealing of the cadmium atoms can also carry out the activation of a dopant P. It will then be possible to carry out conventional steps of installation of at least one electrical contact element in contact with the useful layer. . This electrical contact element makes it possible to electrically polarize the photodiode. The corresponding layer, after annealing, can be removed from the structured layer 121. For example, a chemical etching as described with reference to step 101b of FIG. 1 will be used.
    [0025] S55100 / SD-T 14 A matrix of photodiodes 300 as shown in FIG. 3 is thus obtained. The regions 14 have a cadmium concentration gradient and extend deep into the useful layer, more or less deeply than the first ones. These regions 14 with a composition gradient can also pass entirely through the useful layer, that is to say extend down to the lower layer 109. In the example represented in FIG. extend more deeply into the useful layer than the first doped zones 151. For example, the first doped zones 151 extend over a depth of 1 cm into the useful layer 10, and the regions 14 extend over 3 μm. In addition, the regions 14 extend outside the first doped zones 151. These two characteristics are obtained thanks to the use: of a long annealing and at high temperature, allowingthe diffusion of cadmium deep into the useful layer; and - a structured layer having narrow pads 122, which prevents the diffusion of the cadmium atoms in the useful layer spreads the regions 14 and no longer allows these regions to remain outside the first doped areas 151. A plot is said narrow for example when the width of the pads is less than the difference between the pixel pitch and the width of the first doped regions 151 (the first doped regions being assumed fixed width for the same matrix). In particular, the width of the pads may be at least 1.2 times smaller than the difference between the pixel pitch and the width of the first doped regions 151, for example two times smaller.
    [0026] It has been observed that in a CdxHgi_Je semiconductor material, the bandgap, called "gap", depends on the cadmium concentration. The higher this concentration, the higher the gap. Because of the difference between an average cadmium concentration in a region 14 and in the remainder of the useful layer, each region 14 forms a deep potential barrier between two neighboring first doped zones 151. or in other words between two neighboring photodiodes. In operation, a photon 370 at a wavelength that it is desired to detect enters the matrix of photodiodes on the side of its lower face, and with respect to a given photodiode. This photon causes the appearance of a minority carrier 371 in the useful layer 10. This minority carrier 371 diffuses into the useful layer, until it recombines with a carrier of a different nature. If said minority carrier crosses a PN junction before recombining, it allows the creation of a measurable current. The minority carrier has a diffusion length that corresponds to the distance traveled before recombining. When the diffusion length is high, there is therefore a risk that the minority carrier recombines after crossing the PN junction of a neighboring photodiode. This risk is even higher than the pitch of the matrix of photodiodes is low compared to the diffusion length. However, according to the invention, the photodiode array has, between two neighboring photodiodes, a potential barrier for the minority carriers. Minority carriers are thus prevented from passing through this potential barrier, which prevents a minority carrier from entering the photodiode array with respect to a first photodiode, and passes through the PN junction of a neighboring photodiode. Thus, a minority carrier that enters the photodiode array with respect to a first photodiode remains enclosed in a corridor between a plurality of regions 14, and therefore can not cross the PN junction of another photodiode. This avoids a photon incident: does not cause the appearance of a current in the photodiode to which it enters the matrix of photodiodes; and S55100 / SD-T 16 causes the appearance of a current in a photodiode other than the one in front of which it enters the matrix of photodiodes. Thus, the matrix of photodiodes 300 according to the invention has an improved MTF. This aspect of the invention is particularly advantageous when it is desired that the matrix of photodiodes has a pitch smaller than the diffusion length of the minority carriers. This aspect of the invention is therefore particularly advantageous in the case where the first doped zone 151 is P-doped, and the second doped zone 152 is N-doped (so-called "P on N" technology). In fact, in this technology, the minority carriers have a long lifetime which gives them long diffusion lengths (in comparison with the so-called "N over P" technology corresponding to an N-doped zone 151 and a P-doped zone 152). ).
    [0027] By varying the temperature and / or the duration of the annealing, a desired profile of the gap gradient is obtained in each region 14. It is also noted that the regions 14, since they have the same doping as the second doped zone 152, prevent polarization of all the photodiodes of the same matrix by means of the same electrical contact point. The invention is particularly interesting in the context of regions 14 completely crossing the useful layer. In this case, the diodes are completely isolated from each other and the MTF is optimal. In this configuration and in order to limit the impact of lateral scattering of cadmium during the formation of regions 14, the useful layer is advantageously reduced to a thickness of 1 to 2 gm for example. It will also be noted that the invention makes it possible to produce a useful layer offering excellent crystalline quality since the cadmium gradients are produced by diffusion annealing which preserves the crystalline arrangement of the S55100 / SD-T Cdx1-Igije. It would not be possible to obtain the same crystalline quality by localized epitaxial recovery techniques. The invention is particularly advantageous in the case of a useful layer 10 produced by epitaxy in the liquid phase. Indeed, an advantage of this technique is to offer the best crystalline quality. It would be counterproductive to privilege this technique of growth of the useful layer, if one would then strongly deteriorate the crystalline quality of the useful layer (either by contaminations of the external environment, or by creating a gap gradient by a technique that does not preserve the high crystalline quality of the useful layer). Figure 2 schematically illustrates a second embodiment of the method according to the invention. The embodiment illustrated in FIG. 2 will only be described for its differences with respect to the embodiment represented in FIG.
    [0028] Numerals 10, 11, 13, 100, 108, 109, 101, 101a, 101b, 120, 121, 122, 102, 102a, 102b, 14, 15, 151, 152 respectively correspond to the numerals 20, 21, 23 , 200, 208, 209, 201, 201a, 201b, 220, 221, 222, 202, 202a, 202b, 24, 25, 251, 252. In step 201, the structured layer 221 forms pads 222 having a width L2 of 12 gm, and distributed in a square mesh with a pitch P1 of 1511m. In step 202, an annealing is carried out corresponding, for example, to heating at 430 ° for 50 hours. The graph 202b corresponds to the graph 102b of FIG. 1. The graph 202a corresponds to a section in the useful layer along the axis DD 'passing in a region 24. The gradient, and thus the region 24, extends in the layer It can be used up to D.sub.2, the photodiode 400 as shown in FIG.
    [0029] S55100 / SD-T 18 The regions 24 and the first doped areas 251 are here partially superimposed. More precisely, the regions 24 extend in an upper peripheral volume 255 of each of the first doped zones 251. For example, each first doped zone 251 has a width W of 8 μm (width at the upper face 208), and its upper peripheral volume 255 has a width y of 2 μm (width at the upper face 208). The regions 24 extend, in a first doped zone 251, about a quarter of the volume thereof. In addition, the regions 24 extend here shallow in the useful layer, less deeply than the first doped zones 251. For example, the first doped zones 251 extend over a depth of 1 μm in the useful layer 20, and the regions 24 extend 0.5 '1m deep into the useful layer 20. Typically, the first doped areas 251 extend into the useful layer deeper than the regions 24, for example 1.5 times deeper. According to this embodiment, the optimal performance is obtained for first 251 through-doped zones (i.e. extending to the lower face 209). These two characteristics are obtained through the use of: - a lower temperature annealing (280 ° C, against 430 ° C in the first embodiment of the method according to the invention), allowing the diffusion of cadmium not deeply into the useful layer, and / or a shorter annealing time (10 hours instead of 50 hours); and - a structured layer having relatively wide pads 222, which allows the regions 24 to extend into the first doped areas 251. A pad is said to be wide, for example when the width of the pads is greater than the difference between the pixel pitch and the width of the first doped regions 251 (the first doped regions being assumed to have a fixed width for the same matrix), for example 1.2 times greater than this difference. The matrix of photodiodes 400 thus has a cadmium concentration gradient decreasing from its upper face 208 to its lower face 209, and present only between the first doped areas 251 and on the edges thereof. Thus, the edges of the first doped zones 251 are positioned in a larger gap material making it possible to reduce the generation-recombination of the carriers in the ZCE (Space Charge Zone). Indeed, according to this embodiment, a large part of the ECA (on the edges of the photodiode) is included in a larger gap material. This local decrease in generation-recombination will cause a drop in the dark current of the photodiode. The matrix of photodiodes 400 then has a reduced dark current, compared with a matrix of photodiodes according to the prior art. In particular, for the same technique for producing a PN junction, there is obtained a photodiode having a reduced dark current, for example halved. These observations can be explained as follows: A photodiode only makes it possible to detect wavelengths whose energy corresponds substantially to the gap of the material of the second doped zone 252. As indicated with reference to FIG. a material in CdxHgi, Te has a gap that depends on the concentration of cadmium. A low concentration of cadmium ensures a small gap and therefore the detection of long-wave radiation, and vice versa. In practice, preference is given to detecting infrared radiation, which corresponds to a small gap in the material of the second doped zone 252. A disadvantage of a material with a small gap, however, is that it exhibits an increased sensitivity to the photodiode. Indeed, the smaller the gap, the more likely it is that defects in the material introducing an intermediate S55100 / SD-T energy level into the material will favor a spontaneous crossing of the gap by an electron. As a result, electron-hole pairs are formed spontaneously in the material. An electron-hole pair corresponds to the appearance in the useful layer of a minority carrier (the electron or the hole). When the minority carrier passes through a PN junction, an electrical current is measured which does not correspond to the absorption of electromagnetic radiation. For this reason we speak of a current of darkness. The dark current will thus be a limit to the detection of very low radiation in the infrared. The defects in the useful layer are more numerous at the surface, near the upper face 208. This is explained by the fact that the crystalline quality of an interface can not be as high as the crystalline quality at the center of the useful layer. . In addition, the upper face 208 is the side exposed to the environment, in particular to the different treatments undergone by the useful layer 20, may introduce impurities. These treatments correspond in particular to the steps of making PN junctions. For example, in the case cited above of the realization of a PN junction by ion implantation of arsenic defects in the useful layer are thus more numerous in the vicinity of both the upper face 208 and PN junctions, especially when the PN junctions are performed by arsenic implantation. The regions 24 of the photodiode array 400 according to the invention each have a cadmium gradient, which corresponds to a gap gradient called gap opening. According to the invention, the matrix of photodiodes has: a high surface gap and between the PN junctions, which decreases the sensitivity of the useful layer to the defects present at the surface and between the PN junctions, a high gap in surface and at the PN junctions, in higher peripheral volumes 255 of the first doped zones 251, which S55100 / SD-T 21 decreases the sensitivity of the useful layer to the defects resulting from ion implantation, and a gap which remains reduced in depth, in a so-called absorption region, which makes it possible to detect electromagnetic radiation at the desired wavelength. Moreover, the first doped zones 251 are not enclosed within a region 24, making it possible not to limit the quantum yield. These first doped zones 251 extend into the useful layer more deeply than the regions 24, which further improves the quantum efficiency. Each gap opening also forms a potential barrier which prevents minority carriers formed deep in the useful layer from recombining on the surface defects, without crossing a PN junction and thus without forming a current. Note that it is not a problem that the cadmium concentration gradient is not present in a central volume of the first doped zones 251. In fact, the doping density in these first doped zones is generally sufficiently high to limit the impact of the present defects.
    [0030] Advantageously, the regions 24 cover the first doped areas 251 only on a reduced volume, and therefore cover the PN junctions only on a reduced area of each of them. For example, the regions 24 cover less than 20% of the total area of each PN junction. The quantum yield is thus maximized by limiting the PN junction portions to which the minority carriers will not have access because of the potential barrier associated with a region 24. Preferably, the regions 24 are present even before any embodiment step. of a PN junction. Thus, when making a PN junction, the useful layer is protected on a major part of its upper face 208 by S55100 / SD-T 22 cadmium gradients. In other words, the useful layer is made less sensitive to any contamination by the environment. Moreover, during the realization of a PN junction, the defects related to the ion implantation will be localized in a larger gap material.
    [0031] It can thus be seen that the invention is particularly advantageous for the detection of long wavelengths, in the far-infrared (LWIR), or very far-off (VLWIR, for the English "Very Long Wave InfraRed", corresponding to lengths waveforms greater than 8μm at 80K). Indeed, for the detection of these wavelengths, a low cadmium concentration must be achieved in the second doped zone 252 (x <0.3, for example x = 0.22), which corresponds to a high sensitivity of the photodiodes to the defects of the useful layer, in photodiode matrices according to the prior art. According to a variant not shown, the regions 24 with a high cadmium concentration extend deeper into the useful layer than the first doped zones 151. The regions can extend over a portion of the thickness of the useful layer or pass through the useful layer throughout its thickness. As explained with reference to FIGS. 1 and 3, a matrix of photodiodes having an optimal MTF is obtained (the regions 24 completely separate the pixels from the matrix). In addition, a reduced dark current is obtained because of the presence of the box edges 251 in regions 24. It should be noted, in view of the explanations above, that in the embodiment of the photodiode matrix such that illustrated in Figure 3, the regions 14 stabilize a portion of the surface of the useful layer which can reduce the dark current. FIG. 5 shows a third embodiment of a matrix of photodiodes 500 according to the invention. FIG. 5 will only be described for its differences with respect to FIG. 4. The reference numerals 20, 21, 24, 222, 251, 252, 255 of FIG. 4 S55100 / SD-T 23 respectively correspond to the numerical references 50, 51 , 54, 522, 551, 552, 555 of FIG. 5. The photodiode array 500 was made using a method according to the invention implementing: steps 100 to 102 as described with reference in Figure 1, so that each region 54 has a first portion 560 having a cadmium concentration gradient as described with reference to Figures 1 and 3, which extends deep into the useful layer and outside first doped areas 551; a step of removing the corresponding layer, after annealing, from the structured layer formed in step 101; then - steps 200 to 202 as described with reference to Figure 2, so that each region 54 has a second portion 561 having a cadmium concentration gradient as described with reference to Figures 2 and 4, which extends slightly into the useful layer and partially overlaps first doped areas 551. A step of forming a PN junction is implemented, for example before step 100, or after step 202, or between steps 102 and 200.
    [0032] Thus, the photodiode array 500 combines the advantages mentioned with respect to the photodiode array 300 illustrated in FIG. 3 and the photodiode array 400 illustrated in FIG. 4. It is possible to imagine all sorts of variants, using one or more cycles. comprising the steps as described with reference to Figures 1 or 2, of producing a structured layer rich in cadmium and annealed. Between two cycles, the corresponding layer, after annealing, is advantageously removed from the previously formed structured layer. Each of the cycles can implement a structured layer of different shape.
    [0033] S55100 / SD-T The invention is not limited to the examples which have just been mentioned, and all kinds of variants can be envisaged, in particular different forms of regions having a cadmium gradient. These forms may be obtained using methods according to the invention, by a suitable structured layer and the possible use of several cycles as described above. Moreover, these regions can be traversing over the entire thickness of the useful layer.
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. A photodiode array (300; 400; 500) comprising: - a so-called useful layer (10; 20; 50) of a cadmium, mercury and tellurium semiconductor alloy of the type CdxHgi_xTe, the useful layer having an upper face (108; 208) and a lower face (109; 209); at least two first doped zones (151; 251; 551) located in the useful layer, each forming a PN junction (15; 25) with a second doped zone (152; 252; 552) surrounding the first doped zones; PN junctions flush with the upper face (108; 208) of the useful layer; characterized in that the matrix (300; 400; 500) comprises at least one region (14; 24; 54) located between two adjacent PN junctions (15; 25) and having a cadmium concentration gradient decreasing from the face upper (108; 208) to the lower face (109; 209) of the useful layer.
    [0002]
    2. Matrix (300; 400; 500) according to claim 1, characterized in that the average cadmium concentration in said region (14; 24; 54) is greater than the average cadmium concentration in the remainder of the useful layer ( 10; 20; 50).
    [0003]
    3. Matrix (300) according to claim 1 or 2, characterized in that said region (14) extends between two PN junctions (15), and outside each first doped zone (151). 25
    [0004]
    4. Matrix (300) according to claim 3, characterized in that said region (14) extends in the useful layer (10) deeper than the first doped areas (151). 20S55100 / SD-T 26
    [0005]
    5. Matrix (400; 500) according to claim 1 or 2, characterized in that said region (24; 54) extends between two PN junctions (25), and in an upper peripheral volume (255; 555) of each first doped zones (251; 551).
    [0006]
    6. Matrix (400) according to claim 5, characterized in that said region (24) extends in the useful layer (20) less deeply than the first doped areas (251).
    [0007]
    7. Matrix (400; 500) according to claim 5 or 6, characterized in that said region (24; 54) extends in a first doped zone (251; 551) on less than half of the volume thereof. .
    [0008]
    8. Matrix (500) according to claim 1 or 2, characterized in that said region (54) has: a first portion (560) extending outside the first doped areas (551); and a second portion (561) extending in an upper peripheral volume (555) of at least one first doped area (551); the first portion (560) extending deeper into the useful layer (50) than the second portion (561), and the first portion (560) being surrounded by the second portion (561).
    [0009]
    9. Matrix (300; 400; 500) according to any one of claims 1 to 8, characterized in that the first doped region (151; 251; 551) is P-doped by arsenic atoms. T 27
    [0010]
    10. A method of manufacturing a photodiode array (300; 400; 500) according to any one of claims 1 to 9, characterized in that it comprises the following steps: - embodiment (100, 101; 200, 201 a top layer (121; 221) having at least one through opening (120; greater than the cadmium concentration of the useful layer; annealing (102; 202) the useful layer (10; 20) covered with the structured layer (121; 221), diffusing the cadmium atoms of the structured layer from the structured layer (121; 221) to the layer; useful (10; 20); - Making (103; 203) at least two PN junctions (15; 25) in the useful layer.
    [0011]
    11. Method according to claim 10, characterized in that the embodiment (100, 101; 200, 201) of a structured layer (121; 221) implements: a deposit (100; 200) of a layer of reservoir (12; 22) on the upper face (108; 208) of the useful layer (10; 20); and etching (101; 201) at least one through opening in the reservoir layer, the etching being a chemical etching.
    [0012]
    Method according to claim 10 or 11, characterized in that the steps of producing (100, 101, 200, 201) a structured and annealed layer (102; 202), form a manufacturing cycle, and in that at least two manufacturing cycles are implemented.
    [0013]
    13. Method according to any one of claims 10 to 12, characterized in that the step of performing PN junctions (103; 203) implements an ion implantation of arsenic.S55100 / SD-T 28
    [0014]
    14. Method according to any one of claims 10 to 13, characterized in that the annealing is carried out at a temperature between 100 ° C and 500 ° C.
    [0015]
    15. The method of claim 14, characterized in that the annealing (103; 303) is carried out for a period of between 1h and 100h.
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    WO2021205102A1|2020-04-09|2021-10-14|Commissariat A L'energie Atomique Et Aux Energies Alternatives|Process for manufacturing a low-noise photodetector device in a cdhgte substrate|
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    2016-04-28| PLFP| Fee payment|Year of fee payment: 3 |
    2017-04-07| CL| Concession to grant licences|Name of requester: L'ETAT FRANCAIS, MINISTERE DE LA DEFENSE, FR Effective date: 20170306 |
    2017-04-28| PLFP| Fee payment|Year of fee payment: 4 |
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1400950A|FR3020176B1|2014-04-22|2014-04-22|MATRICE OF PHOTODIODS IN CDHGTE|FR1400950A| FR3020176B1|2014-04-22|2014-04-22|MATRICE OF PHOTODIODS IN CDHGTE|
    US14/686,084| US9397244B2|2014-04-22|2015-04-14|CdHgTe photodiodes array|
    IL238310A| IL238310A|2014-04-22|2015-04-15|Cdhgte photodiodes array|
    EP15164172.7A| EP2937902B1|2014-04-22|2015-04-20|Cdhgte photodiode array|
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