• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
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    • 专利摘要:
    Pixel comprising three adjacent sub-pixels (P1, P2, P3) formed by respective stacks of semiconductor layers, said pixel being characterized in that: - each said sub-pixel comprises a first active layer (32), adapted for emitting light at a first wavelength (λ1) when traversed by an electric current; another sub-pixel (P2) also comprises a second active layer (52, 52 ') adapted to emit light at a second wavelength (λ2) greater than said first wavelength; another of said sub-pixels (P3) also comprises a third active layer (22, 6), adapted to emit light at a third wavelength (λ3) greater than said first wavelength and different from said second length wave; at least one of said second and third active layers being adapted to emit said light when it is excited by the light at the first wavelength emitted by said first active layer of the same sub-pixel. Semiconductor structures and method for manufacturing such a pixel
    公开号:FR3019380A1
    申请号:FR1452876
    申请日:2014-04-01
    公开日:2015-10-02
    发明作者:Benjamin Damilano；Jean-Yves Duboz
    申请人:Centre National de la Recherche Scientifique CNRS；
    IPC主号:
    专利说明:

    [0001] The invention relates to a semi-conductor pixel, in particular based on inorganic semiconductors and more particularly on the basis of (Al.sub.2), a semiconductor pixel, and a process for producing the same. , Ga, ln) N, as well as on a matrix of such pixels. The invention also relates to semiconductor structures serving as a basis for the production of such pixels, and methods of manufacturing them. The invention applies in particular to the realization of miniaturized color screens and projectors "near the eye", as well as lighting. It is known to produce light emitting devices whose color is obtained and controlled by mixing primary colors. The combination of three light emitting diodes (LEDs) each emitting at a specific wavelength corresponding to blue, green, and red provides any color as long as the intensity ratio between each LED is well controlled. . This property is particularly interesting for making screens or lamps with varying hues and intensities ("intelligent lighting"). For this type of application, three separate LEDs can be assembled, which may if necessary be fabricated from separate semiconductor materials. The most common configuration is for example to use two nitride LEDs (AIInGaN) for blue and green, and a phosphide LED (AIGaInP) for red. The use of three different LEDs, however, has a significant additional cost compared to a single LED. On the other hand, combining three separate LEDs for making each pixel poses miniaturization problems that become insoluble for screen-like applications with a small pixel size. These miniaturization problems can be solved by the use of organic LEDs ("OLEDs"), which make it easy to associate three or four different color emitters in each pixel of an active matrix display. However, the luminance of OLEDs is too low for some applications, such as lighting or "close to the eye" projection. It has also been proposed to produce a stack of inorganic semiconductor layers comprising three or more LEDs, emitting at different wavelengths, which can be controlled independently of one another. In this way, a single stack constitutes a complete pixel, in which the different sub-pixels are superimposed instead of being arranged next to one another. See US 8,058,663. Such a structure is difficult to achieve, and especially to hybridize, because it is necessary to independently interconnect several active layers located at different depths of the stack. Moreover, the structures described by the document US Pat. No. 8,058,663 comprise either a plurality of tunnel junctions intended to be connected in series, or contacts taken on "stair steps" etched in semiconductor layers having p-type doping. ; in both cases, relatively high electrical resistances are obtained, leading to high losses. In addition, the depths to be engraved are relatively large, which limits the achievable miniaturization. The invention aims to overcome at least some of the aforementioned drawbacks of the prior art. More precisely, it aims to provide: a semiconductor pixel structure that can be made from inorganic semiconductors (thus, potentially, at high brightness), in a simple manner and that can be miniaturized, for example up to a lateral size less than or equal to 10 μm; a matrix of such pixels, which can be used in a screen, a projector or a lighting device; monolithic semiconductor structures that can be used to produce such a pixel or matrix of pixels; and methods of making such pixels or pixel arrays.
    [0002] According to the invention, these objectives are achieved by virtue of a pixel structure comprising three adjacent sub-pixels, made by etching from the same structure comprising three active layers (light emitting) - or only two layers, a third being reported later. At least one, and preferably two, of these active layers are electrically pumped, the remaining layer (s) being optically pumped to function as wavelength converter (s). Such a pixel structure can be made based on inorganic semiconductors and therefore have a much higher brightness than that achievable by OLEDs. Compared with the devices described in US Pat. No. 8,058,663, the hybridization and much simpler and the losses can be less (only one tunnel junction is necessary to stop all etches on n-doped layers). Moreover, as the structure is etched on both sides, the engraving depth is reduced, which allows a very fine miniaturization of the sub-pixels. An object of the invention is therefore a pixel comprising at least three sub-pixels arranged next to each other, each said sub-pixel comprising a respective stack of semiconductor layers, said pixel being characterized in that that: - each said sub-pixel comprises a first active layer, adapted to emit light at a first wavelength when it is traversed by an electric current; at least one said sub-pixel, said first sub-pixel, also comprises a first and a second electrode arranged on either side of said first active layer to allow an electric current to pass therethrough; another of said sub-pixels, said second sub-pixel, also comprises a second active layer, adapted to emit light at a second wavelength greater than said first wavelength; another of said sub-pixels, said third sub-pixel, also comprises a third active layer, adapted to emit light at a third wavelength greater than said first wavelength and different from said second wavelength ; at least one of said second and third active layers being adapted to emit said light when it is excited by the light at the first wavelength emitted by said first active layer of the same sub-pixel. According to various embodiments of such a pixel: said first active layer may be at least partially transparent at said second wavelength; said second active layer of said second sub-pixel can be arranged on a first side of said first active layer and adapted to emit said light at said second wavelength when it is traversed by an electric current, said second sub-pixel comprising also a third and a fourth electrode arranged on either side of said second active layer to allow an electric current to pass through without passing through said first active layer; and said third active layer of said third sub-pixel can be arranged on a second side of said first active layer, opposite said first side, and adapted to emit said light at said third wavelength when excited by the light at the first wavelength emitted by said first active layer of said third sub-pixel, said third sub-pixel also comprising a fifth and a sixth electrode arranged on either side of said first active layer to allow an electric current of cross it. - Said first wavelength may belong to the blue part of the visible spectrum, said second wavelength to its red part and said third wavelength to its green part. In a variant, said first wavelength may belong to the blue part of the visible spectrum, said second wavelength to its green part and said third wavelength to its red part. Alternatively, said first wavelength may belong to the blue part of the visible spectrum, said second wavelength to its green part and said third wavelength to its red part; said second active layer of said second sub-pixel can be adapted to emit said light at said second wavelength when excited by the light at the first wavelength emitted by said first active layer of the same sub-pixel; and said third sub-pixel may also comprise a second active layer, arranged between said first and said third active layer of the same pixel and adapted to emit said light at said second wavelength when excited by the light at the first wavelength emitted by said first active layer, said third active layer being adapted to emit said light at said third wavelength when excited by light at the second wavelength emitted by said second active layer. Such a pixel may have a monolithic structure. Alternatively, it may have a monolithic structure with the exception of said third active layer, which is then reported. Said active layers may be based on (Al, Ga, In) N. Said first active layers of said sub-pixels may be coplanar, of the same composition and of the same structure. Another object of the invention is a matrix of pixels comprising a plurality of such pixels hybridized on a host substrate carrying a control circuit of said sub-pixels, said first and third active layers being respectively the closest active layer and the further away from said host substrate. Yet another object of the invention is a semiconductor structure comprising a stack of semi-conductive epitaxial layers deposited on a substrate, said stack comprising, from said substrate: a first subset of semiconductor layers comprising at least one photoluminescent layer, said third active layer, adapted to emit light at a wavelength called third wavelength, said layers having a doping of the same type; a second subset of semiconductor layers forming a light emitting diode comprising an electroluminescent layer, said first active layer, adapted to emit light at a wavelength called first wavelength; and a third subset of semiconductor layers forming a light emitting diode comprising an electroluminescent layer, said second active layer, adapted to emit light at a wavelength called second wavelength; said first, second and third wavelengths being different from each other and said first wavelength being lower than said second and third wavelengths. Advantageously, in such a structure, said first subset of semiconductor layers may have an n-type doping and in which a tunnel junction is interposed between said second subset and said third subset of semiconductor layers. Yet another object of the invention is a semiconductor structure comprising a stack of semiconductor epitaxial layers deposited on a substrate, said stack comprising, from said substrate: a first subset of semiconductor layers comprising at least one photoluminescent layer; said third active layer, adapted to emit light at a wavelength called third wavelength; a second subset of semiconductor layers comprising at least one photoluminescent layer, called the second active layer, adapted to emit light at a wavelength called second wavelength; and a third subset of semiconductor layers forming a light emitting diode comprising an electroluminescent layer, said first active layer, adapted to emit light at a wavelength called first wavelength; said first wavelength being lower than said second and third wavelengths and said second wavelength being less than said third wavelength; said second active layer being adapted to emit said light at said second wavelength when excited by light at said first wavelength, and said third active layer being adapted to emit said light at said third length of light; wave when excited by light at said second wavelength. Yet another object of the invention is a method of manufacturing a pixel comprising the following steps: a) providing a semiconductor structure as mentioned above; b) etching said structure to define first, second and third pads for forming respective sub-pixels by etching extending at least through said first and second active layers; c) etching said first pad and said third pad, but not said second pad, to remove said second active layer; d) producing a pair of electrical contacts located on either side of said second active layer of said third, and two pairs of electrical contacts located on either side of said first active layer of said first and second pads; E) removing said substrate; and f) etching the structure to remove said third active layer in correspondence of said first and second pads, but not said third pad. Yet another object of the invention is a method of manufacturing a pixel comprising the steps of: a) providing a semiconductor structure comprising: a first subset of semiconductor layers forming a light emitting diode comprising a electroluminescent layer, called first active layer, adapted to emit light at a wavelength called first wavelength; and a second subset of semiconductor layers forming a light-emitting diode comprising an electroluminescent layer, said second active layer (52 '), adapted to emit light at a wavelength called second wavelength, greater than said first wavelength; b) etching said structure to define first, second and third pads for forming respective sub-pixels by etching extending through said first and second active layers; c) etching said first pad and said third pad, but not said second pad, to remove said second active layer; d) providing a pair of electrical contacts located on either side of said second active layer of said third, and two pairs of electrical contacts located on either side of said first active layer of said first and second pads; e) removing said substrate; and f ') relate, in place of said substrate, a photoluminescent layer said third active layer adapted to emit light at a third wavelength when excited by light at said first wavelength, then etching said third active layer in correspondence of said first and second pads; or bring said third active layer in correspondence of said third pad and excluding said first and second pads. Yet another object of the invention is a method of manufacturing a pixel comprising the following steps: A) providing a semiconductor structure as mentioned above; B) etching said structure to define first, second and third pads for forming respective sub-pixels by etching extending at least through said first active layer; C) providing three pairs of electrical contacts located on either side of said first active layer of said first, second and third pads D) removing said substrate; and E) etching said first pad to remove said second and third active layer, and said first pad to remove said third active layer therefrom. Generally speaking, the term "light" or "light radiation" means electromagnetic radiation of wavelength between 380 and 780 nm. "Blue light" or "blue radiation" means electromagnetic radiation having a wavelength between 380 and 490 nm, and preferably between 430 nm and 470 nm; - "green light" or "green radiation" means electromagnetic radiation of wavelength between 500 nm and 560 nm, and preferably between 510 nm and 530 nm; "Red light" or "red radiation" means electromagnetic radiation of wavelength between 600 and 780 nm, and preferably between 610 nm and 640 nm; "Partially transparent layer" means a layer having a transmittance greater than or equal to 25%, more preferably greater than or equal to 50%, preferably greater than or equal to 75%, more preferably greater than or equal to 90%, or even greater than 95%. Other features, details and advantages of the invention will emerge on reading the description given with reference to the accompanying drawings given by way of example and which represent, respectively: FIGS. 1A-1E, the various steps of FIG. a method of manufacturing a semiconductor pixel according to a first embodiment of the invention; FIGS. 2A-2E, the various steps of a method of manufacturing a semiconductor pixel according to a second embodiment of the invention; FIGS. 3A-3D, the various steps of a method for manufacturing a semiconductor pixel according to a third embodiment of the invention; and - Figure 4, a side view of a matrix of semi-conductive pixels according to said first embodiment. FIG. 1A shows a monolithic epitaxial structure that can be used as a starting point for a method of manufacturing a semiconductor pixel according to a first embodiment of the invention. This structure comprises, from the bottom: - a substrate 1, for example made of sapphire; this substrate will be removed during the manufacturing process, therefore its nature is of little importance, provided that it allows the epitaxial growth of the other layers constituting the structure. Thus instead of sapphire could be used, for example, a Si, SiC or ZnO substrate. - A first subset of semiconductor layers 2 comprising, in order, a n-type doped GaN layer 21, for example of thickness equal to 2 μm, having only an electrical conduction function, and a "active" (i.e., light emitting) layer 22 comprising a quantum well stack (Ga, ln) N / (A1, Ga, In) N, also having n-type doping or unintentionally doped and capable of emitting green light radiation when excited by blue light radiation. The active layer may comprise, for example, 50 periods In0.25Ga0.75N (2 nm) / GaN (10 nm). A second subset of semiconductor layers 3 forming a light-emitting diode and comprising a n-doped GaN layer 31 (for example having a thickness equal to 1 μm), an "active" layer 32 comprising a quantum well stack (G 1, n) N / (A1, Ga, In) N doped or unintentionally doped (for example comprising 5 periods Ino, 15 Ga 0.85 N (2 nm) / GaN (10 nm)) capable of emitting blue radiation when electrically pumped and another layer 33 of p-doped GaN (e.g., 200 nm thick), so as to form a pn junction. A tunnel junction 4 (p ++ / n ++, for example of thickness equal to 50 nm). A third subset of semiconductor layers 5 forming a light emitting diode and comprising a n-doped GaN layer 51 (1 μm), an "active" layer 52 comprising a quantum well stack (Ga, ln) N / ( A1, Ga, In) N doped or unintentionally doped (for example, 5 periods In0.40Ga0.60N (2 nm) / GaN (10 nm),) capable of emitting red radiation when electrically pumped, another layer 53 of p-doped GaN (200 nm), so as to form a pn junction and a p ++ doped contact layer 54 (20 nm). It will be noted that the tunnel junction 4 makes it possible to prevent the layers 33 and 51 from forming a parasitic p-n junction which would be inversely polarized when the diodes 3 and 5 are directly polarized. In principle, one could change the structure to not use a tunnel junction, but it would require to stop etching steps on p-doped layers, which is not desirable for technological reasons. As will be explained later, the layers 31 and 51 will serve as etch stop layers; in general, they will be thicker than the other layers of the structure. In principle, it would be possible to invert the doping of all the layers of FIG. 1A, but this would not be advantageous because the p-doped GaN is substantially more resistive than the n-doped GaN. According to the invention, the structure of FIG. 1A is then processed by conventional photolithography and metal evaporation steps, as will be explained in detail with reference to FIGS. 1B-1E. FIG. 1B shows the structure after: A first etching step defining three pads P1, P2 and P3 intended to form respective sub-pixels, separated by two grooves S1 and S2 which extend, in depth, up to at layer 31; a third groove S3 of the same depth is etched on the side of the pad P3. It is important that these grooves pass through at least the active layers 32 and 52, but not the entire structure to the substrate. - A second etching step, removing the layers 52, 53, 54, and a portion of the layer 51, pads P1 and P3, and performing a "step" at the layer 52 of the pad P2. - A metal deposition step making electrical contacts at the top of the pads Pl, P2 and P3, the bottom of the grooves S2 and S3 and on the "step" above. These electrical contacts are identified by references C11, C12, C21, C22, C31, C32. Then, the structure is turned over and the substrate removed (Figure 1C). Follows a "back face" etching step, which removes the layer 21 and the "green" active layer 22 from the pads P1 and P2, but not from the pad P3 (FIG. 1D). The order in which certain steps are implemented can be modified. For example, the electrical contacts can be deposited before or after the removal of the substrate and the etching of the green active layer. The pixel structure P thus obtained is hybridized on a substrate 7 carrying a control circuit of the pixel by means of contact balls BC, generally indium (Figure 1 E). The substrate 7 may be constituted by a printed circuit, or even an integrated circuit; reference 70 identifies conductive tracks of the control circuit. The contacts C11, C12 form electrodes for directly polarizing the blue light emitting diode 3 of the pad P1, which thus forms a "blue" sub-pixel, emitting light B at a first wavelength λ 1. The contacts C21, C22 form electrodes for directly polarizing the red light emitting diode 5 of the pad P2, which thus forms a "red" sub-pixel emitting a light R at a second wavelength X2> X1. It should be noted that the entire stack of semiconductor layers above active layer 52 is transparent to red light. The contacts C31, C32 form electrodes for directly polarizing the blue light emitting diode 3 of the pad P3; the blue light emitted by the active layer 32 optically pumps the active layer 22, which re-emits a green light V, at a third wavelength X3> X1. The pad P3 thus forms a "green" sub-pixel. The three sub-pixels can therefore be driven independently, to form a pixel type "red-green-blue" (RGB). In a known manner, it is possible to make pixels comprising more than three sub-pixels. These may have any shape and any arrangement known in the art. The method has been described with reference to the manufacture of a single isolated pixel, but it is easily generalized to the manufacture of a matrix of 15 pixels, possibly monolithic, which can be used to produce a display screen. Figure 4 shows a side view of such a matrix. Although the term "pixel" suggests a display application, an optoelectronic device of the type illustrated in FIG. 1E may also serve as a variable color illumination element whose active surface may be of the order mm2, typical of inorganic white LEDs. The structure of FIG. 1A presents, from the substrate, an active layer 22 "green" (emitting a green light), an active layer 32 "blue" and an active layer 52 "red". In principle, it would be possible to invert the positions of the green and blue active layers, but this would lead to pumping a red emitter with a green light, which can not be achieved efficiently, at least not with the family (AI, Ga, ln) N due to the weak absorption of green light by quantum wells (Ga, ln) N / (A1, Ga, In) N emitting in the red. It is also possible to invert the positions of the red and green active layers. However, in this case it is not advisable to make a monolithic structure based on (Ga, ln) N / (A1, Ga, In) N. Indeed it is known that the red emitters in (Ga, ln) N / (A1, Ga, In) N are very sensitive to temperature. By depositing such a transmitter before the blue and green active layers, it could damage it. Therefore, it is preferable to use a reported wavelength converter, emitting in the red. To be able to miniaturize the pixel, it is preferable to use, as a converter, a semiconductor such as (Al, Ga, ln) P rather than a phosphorus, which should be relatively thick (on the order of 100 μm to ensure good absorption of the excitation light). FIGS. 2A-2E illustrate the fabrication of a pixel according to a second embodiment of the invention, having a reported red-wavelength converter. The starting point of such a process (FIG. 2A) is a structure similar to that of FIG. 1A but not including layers 21 and 22; in this structure, the layer 31 is directly deposited on the substrate. In addition, the active layer farthest from the substrate (reference 52 ') is adapted to emit green radiation, instead of red radiation as the active layer 52 of Figures 1A - 1E. In FIG. 2A, the reference 3 'identifies a first stack of semiconductor layers, comprising the layers 31, 32 and 33, and substantially identical to the second stack 3 of FIG. the reference 5 'identifies a second stack of semiconductor layers comprising the layers 51, 52', 53 and 54. The first etching steps (FIG. 2B), reversal and elimination of the substrate (FIG. 2C) are substantially identical to the steps 25 corresponding of the method described above; the three pads are identified by the references P1 ', P2' and P3 'to distinguish them from those of the first embodiment. Then, as illustrated in FIG. 2D, the method comprises a step of reporting (for example by gluing) a red-emitting wavelength converter (reference 6) - for example based on (Al, Ga , ln) P - and an etching step to eliminate this converter except in correspondence of the third pad P3 '. Alternatively, it could relate the converter 6 only in correspondence of said third pad, but in practice it would be very difficult. The hybridization step on a substrate carrying a control circuit, not shown, is as in the case of the first embodiment. The order in which certain steps are implemented can be modified. For example, the electrical contacts can be deposited before or after the removal of the substrate and the bonding of the wavelength converter.
    [0003] A wavelength converter reported (green, in this case) could also be used in the embodiment of Figure 1 E. In this case, the converter could advantageously be made in type 11-V1 semiconductor. The embodiments so far considered employ two electroluminescent active layers and a photoluminescent active layer (wavelength converter). FIGS. 3A-3D illustrate the fabrication of a pixel structure according to a third embodiment, using a single electroluminescent active layer and two photoluminescent active layers, and thus comprising one LED and two wavelength converters. Figure 3A shows a semiconductor structure serving as a starting point for such a method. This structure comprises a substrate 1, of the same type as that used in the embodiments described above, on which is deposited the following stack of semiconductor layers: a first "passive" (non-luminescent) layer 310, for example GaN (2 μm); this layer is intended to separate the active layer 320 (see below) from the impurities on the surface of the substrate and, if the latter is not GaN, to ensure a good crystalline quality of said active layer; a first "active" (photoluminescent) layer 320, for example a stack of quantum wells in (Ga, ln) N / (A1, Ga, In) N, capable of emitting at a wavelength λ3 located in the red part of the visible spectrum; a second passive layer 330, for example GaN (500 nm); a second active (photoluminescent) layer 340, for example a stack of quantum wells in (Ga, ln) N / (A1, Ga, In) N, capable of emitting at a wavelength λ2 situated in the green part visible spectrum; a third passive layer 350, which is thicker than the previous ones because it is intended to serve as an etch stop layer, exhibiting an n-type doping, for example GaN (1 μm); a second active (photoluminescent) layer 360, for example a stack of quantum wells in (Ga, ln) N / (A1, Ga, In) N, capable of emitting at a wavelength λ2 located in the green part the visible spectrum; a third (electroluminescent) active layer 360, for example a stack of quantum wells in (Ga, In) N / (A1, Ga, In) N, capable of emitting at a wavelength Xi located in the blue part visible spectrum; A fourth passive layer 370 having a p-type doping, for example GaN (200 nm thick); and a contact layer 380, for example made of GaN, having a p ++ type doping (20 nm thick). References 10, 20, 30 indicate a first subset of layers 10, including layers 310 and 320, a second subset 20, including layers 330 and 340, and a third subset 30, including layers 350. at 380. The latter subassembly constitutes a light emitting diode, while the subsets 10 and 20 constitute wavelength converters.
    [0004] As in the embodiments described above, the structure of FIG. 3A is etched so as to individualize three pads P1 ", P2" and P3 "by means of three etching grooves S1, S2. and S3, extending through the layers 380, 370, 360 and a portion of the thickness of the layer 350. Electrodes C11, C12, C21, C22, C31, C32 are deposited at the bottom of the grooves (in contact with each other). with the layer 350) and at the top of the pads (in contact with the layer 380), the structure thus obtained is illustrated in FIG 3B, then the structure is turned over and the substrate removed (FIG. etching "back face" to remove the layers 310, 320 in correspondence of the pad P2 "and the layers 310 to 340 in correspondence of the pad P3" (it will be noted that, like the layer 350, the layer 330 plays a layer function The structure thus obtained, ready to be hybridized, is illustrated in FIG. This figure also explains how it works. In the three pads (sub-pixels), the layer 360, through which an electric current injected by the electrodes passes, emits blue radiation at a wavelength λ 1. In the case of the pad / sub-pixel P1 ", this radiation is emitted by the upper surface of the device In the case of the pads / sub-pixels P2" and P3 ", the radiation at the wavelength λ 1 is absorbed by the layer 340, which re-emits green radiation at a wavelength λ 2. In the sub-pixel P2 ", this green radiation is emitted; in the sub-pixel P3 ", it is absorbed by the layer 320, which re-emits a red radiation at a wavelength λ3 The order in which certain steps of the method are implemented can be modified. Electrical contacts may be deposited before or after substrate removal and "backplane" etching operations. A notable disadvantage of this embodiment is that red light is generated by double wavelength conversion, and Thus, in the case of the materials based on (Al, Ga, In) N, a green light does not effectively excite a transmitter in the red, so it may be preferable to Other materials and / or a non-monolithic embodiment, using at least one reported wavelength converter The invention has been described with reference to a number of embodiments, essentially using mate However, the use of other semiconductor materials, in particular inorganic materials, can be envisaged without departing from the scope of the invention. The use in the active layers of quantum confinement structures (wells or quantum boxes) is advantageous but not essential. Furthermore, depending on the intended application, a device according to the invention may comprise more than three active layers. In addition, especially in applications other than the display (lighting, for example), said active layers can emit radiation colors other than red, green and blue. The values and compositions indicated above are given solely by way of non-limiting examples.
    权利要求:
    Claims (16)
    [0001]
    REVENDICATIONS1. Pixel comprising at least three sub-pixels (P1, P2, P3; P1 ', P2', P3 '; P1' ', P2' ', P3' ') arranged next to each other, each said sub-pixel comprising a respective stack of semiconductor layers, said pixel being characterized in that - each said sub-pixel comprises a first active layer (32, 360) adapted to emit light at a first wavelength (Xi) when it is traversed by an electrical current; at least one said sub-pixel, said first sub-pixel (P1, P1 ', P1 "), also comprises a first (C11) and a second (C12) electrode arranged on both sides another of said first active layer for allowing an electric current to flow therethrough; another of said sub-pixels, said second sub-pixel (P2, P2 ', P2 "), also comprises a second active layer (52, 52') adapted to emit light at a second wavelength (X2 ) greater than said first wavelength; another of said sub-pixels, said third sub-pixel (P3, P3 ', P3 "), also comprises a third active layer (22, 6, 320) adapted to emit a light at a third wavelength (X3) greater than said first wavelength and different from said second wavelength, at least one of said second and third active layers being adapted to emit said light when it is excited by the light at the first wavelength emitted by said first active layer of the same sub-pixel.
    [0002]
    The pixel of claim 1 wherein - said first active layer (32) is at least partially transparent to said second wavelength (X2); said second active layer (52, 52 ') of said second sub-pixel is arranged on a first side of said first active layer and adapted to emit said light at said second wavelength (X2) when traversed by a current electrical, said second sub-pixel also comprises a third (C21) and a fourth (C22) electrode arranged on either side of said second active layer to allow an electric current to pass through without passing through said first active layer; and said third active layer (22, 6) of said third sub-pixel is arranged on a second side of said first active layer, opposite said first side, and adapted to emit said light at said third wavelength (X3) when it is excited by the light at the first wavelength emitted by said first active layer of said third sub-pixel, said third sub-pixel also comprising a fifth (C31) and a sixth (C32) electrode arranged on both sides other of said first active layer to allow an electric current to flow therethrough.
    [0003]
    3. The pixel of claim 2 wherein said first wavelength belongs to the blue portion of the visible spectrum, said second wavelength to its red portion and said third wavelength to its green portion.
    [0004]
    4. A pixel according to claim 2 wherein said first wavelength belongs to the blue part of the visible spectrum, said second wavelength to its green part and said third wavelength to its red part.
    [0005]
    The pixel of claim 1 wherein: said first wavelength belongs to the blue portion of the visible spectrum, said second wavelength to its green portion and said third wavelength to its red portion; said second active layer (340) of said second sub-pixel (P2 ") is adapted to emit said light at said second wavelength when it is excited by light at the first wavelength emitted by said first active layer (360) of the same sub-pixel; and - said third sub-pixel (P3 ') also comprises a second active layer (320), arranged between said first and said third active layer of the same pixel and adapted to emit said light to said second wavelength when excited by light at the first wavelength emitted by said first active layer, said third active layer being adapted to emit said light at said third wavelength when excited by the light at the second wavelength emitted by said second active layer.
    [0006]
    6. Pixel according to one of the preceding claims, having a monolithic structure.
    [0007]
    7. The pixel of claim 4 having a monolithic structure with the exception of said third active layer (6), which is reported.
    [0008]
    8. Pixel according to one of the preceding claims wherein said active layers are made based on (AI, Ga, ln) N.
    [0009]
    9. Pixel according to one of the preceding claims wherein said first active layers of said sub-pixels are coplanar, same composition and same structure.
    [0010]
    10. A pixel array comprising a plurality of pixels according to one of the preceding claims hybridized on a host substrate (7) carrying a control circuit of said sub-pixels, said first and third active layer being respectively the nearest active layer and the furthest from said host substrate.
    [0011]
    A semiconductor structure comprising a stack of semiconductor epitaxial layers deposited on a substrate (1), said stack comprising, from said substrate: a first subset of semiconductor layers (2) comprising at least one photoluminescent layer (22), said third active layer, adapted to emit light at a wavelength called third wavelength (X3), said layers having a doping of the same type; a second subset of semiconductor layers (3) forming a light-emitting diode comprising a light-emitting layer (32), said first active layer, adapted to emit light at a wavelength called first wavelength (X1) ; and a third subset of semiconductor layers forming a light-emitting diode, comprising a light-emitting layer (52), said second active layer, adapted to emit light at a wavelength called second wavelength. (X2); said first, second and third wavelengths being different from each other and said first wavelength being lower than said second and third wavelengths. 10
    [0012]
    The semiconductor structure of claim 11 wherein said first subset of semiconductor layers has n-type doping and wherein a tunnel junction (4) is interposed between said second subset and said third subset. set of semi-conductive layers.
    [0013]
    A semiconductor structure comprising a stack of semiconductor epitaxial layers deposited on a substrate (1), said stack comprising, from said substrate: a first subset of semiconductor layers (10) comprising at least a photoluminescent layer (320), said third active layer, adapted to emit light at a wavelength called third wavelength (X3); a second subset of semiconductor layers comprising at least one photoluminescent layer (340), called the second active layer, adapted to emit light at a wavelength called second wavelength (X2); ; and a third subset of semiconductor layers (30) forming a light-emitting diode comprising an electroluminescent layer (360), said first active layer, adapted to emit light at a wavelength called first wavelength. (X1), said first wavelength being lower than said second and third wavelengths and said second wavelength being less than said third wavelength; said second active layer being adapted to emit said light at said second wavelength when excited by light at said first wavelength, and said third active layer being adapted to emit said light at said third length of light; wave when excited by light at said second wavelength.
    [0014]
    14. A method of manufacturing a pixel according to one of claims 2 to 4 comprising the steps of: a) providing a semiconductor structure according to one of claims 11 or 12; b) etching said structure to define first (P1), second (P2) and third (P3) pads for forming respective subpixels by etching extending at least through said first and second sub-pixels; second active layers; c) etching said first pad and said third pad, but not said second pad, to remove said second active layer; d) producing a pair of electrical contacts (C31, C32) located on either side of said second active layer of said third, and two pairs of electrical contacts (C11, C12, C21, C22) located on either side said first active layer of said first and second pads; e) removing said substrate; and f) etching the structure to remove said third active layer in correspondence of said first and second pads, but not said third pad.
    [0015]
    A method of manufacturing a pixel according to claim 7 comprising the steps of a) providing a semiconductor structure comprising: a first subset of semiconductor layers (3 ') forming a light emitting diode comprising a light emitting layer said first active layer (32), adapted to emit light at a wavelength called first wavelength; and a second subset of semiconductor layers (5 ') forming a light-emitting diode comprising a light-emitting layer, said second active layer (52'), adapted to emit light at a wavelength called second wavelength greater than said first wavelength; b) etching said structure to define a first (P1 '), a second (P2') and a third (P3 ') pads for forming respective sub-pixels, by means of an etching extending therethrough and second active layers; c) etching said first pad and said third pad, but not said second pad, to remove said second active layer; d) producing a pair of electrical contacts (C21, C22) located on either side of said second active layer of said second, and two pairs of electrical contacts (C11, C12; C31, C32) located on either side said first active layer of said first and third pads; e) removing said substrate; and V) is to report, in place of said substrate, a so-called third active layer photoluminescent layer adapted to emit light at a third wavelength when excited by light at said first wavelength, and then to withdraw by etching said third active layer in correspondence of said first and second pads; to bring said third active layer in correspondence of said third pad and excluding said first and second pads.
    [0016]
    The method of manufacturing a pixel according to claim 5 comprising the following steps: A) providing a semiconductor structure according to claim 13; B) etching said structure to define a first (P1 "), a second (P2") and a third (P3 ") pads for forming respective sub-pixels, by means of etching extending at least through said first active layer C) producing three pairs of electrical contacts (C31, C32, C11, C12, C21, C22) located on either side of said first active layer of said first, second and third pads D) removing said substrate andE) etching said first pad to remove said second and third active layer, and said first pad to remove said third active layer.
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    同族专利:
    公开号 | 公开日
    US10103195B2|2018-10-16|
    EP3127159A1|2017-02-08|
    FR3019380B1|2017-09-01|
    JP6653665B2|2020-02-26|
    WO2015150281A1|2015-10-08|
    EP3127159B1|2019-04-24|
    JP2017513225A|2017-05-25|
    US20170213868A1|2017-07-27|
    KR20160139004A|2016-12-06|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1452876A|FR3019380B1|2014-04-01|2014-04-01|PIXEL SEMICONDUCTOR, MATRIX OF SUCH PIXELS, SEMICONDUCTOR STRUCTURE FOR CARRYING OUT SUCH PIXELS AND METHODS OF MAKING SAME|FR1452876A| FR3019380B1|2014-04-01|2014-04-01|PIXEL SEMICONDUCTOR, MATRIX OF SUCH PIXELS, SEMICONDUCTOR STRUCTURE FOR CARRYING OUT SUCH PIXELS AND METHODS OF MAKING SAME|
    JP2016560409A| JP6653665B2|2014-04-01|2015-03-27|Semiconductor pixels, matrices of such pixels, semiconductor structures for manufacturing such pixels, and methods of making them|
    KR1020167029679A| KR20160139004A|2014-04-01|2015-03-27|Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication|
    EP15741856.7A| EP3127159B1|2014-04-01|2015-03-27|Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication|
    PCT/EP2015/056779| WO2015150281A1|2014-04-01|2015-03-27|Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication|
    US15/129,679| US10103195B2|2014-04-01|2015-03-27|Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication|
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