• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
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    • 专利摘要:

    公开号:FR3017743A1
    申请号:FR1451233
    申请日:2014-02-17
    公开日:2015-08-21
    发明作者:Dominique Ausserre；Khachfe Refahi Abou；Guillaume Brotons
    申请人:Centre National de la Recherche Scientifique CNRS；Universite du Maine；
    IPC主号:
    专利说明:

    [0001] The invention relates to an electrochemical device, to an apparatus comprising such a device and to the use of such an apparatus for the in situ study of at least one device. electrochemical reaction and / or electrochemical deposition process. Solid-liquid interfaces are home to many types of chemical and physicochemical reactions. In particular, the interfaces between conducting solids (in particular metals) and electrolytes are the seat of electrochemical reactions which may have numerous applications: generation and storage of electrical energy, production of chemical and biochemical sensors, catalysis, etc. These reactions are complex phenomena, involving several stages, particularly difficult to understand and control. Because of this complexity, studies in this field essentially consider the case of planar surfaces; similarly planar surfaces are used predominantly in applications. With the progressive integration of complex analytical devices, the consideration of the local character of electrochemical phenomena is of increasing importance. In addition, the real-time study of reaction kinetics provides essential information about these mechanisms. For these reasons, there is a growing need for tools combining local electrochemical measurements and imaging. The simplest imaging techniques are of the optical type; unfortunately, it is difficult to combine them with local electrochemical measurements. Indeed, the electrochemical reactions take place on the surface of electrodes, which are generally opaque, in contact with an electrolyte; therefore, in accordance with the prior art, an optical imaging device used to study such a reaction must be arranged in the half-space containing the active surface of the electrode and the electrolyte. But the local electrochemical measurements must also be performed in the same half-space, for example by means of a local contact probe sweeping the electrode; such a probe may be interposed between the optical imaging device and the surface, hindering the observation of the latter. Even in the absence of these congestion constraints, the observation of a surface through an electrolyte can be difficult. Moreover, the modifications of the electrode surface induced by an electrochemical reaction often have a low optical contrast - which is for example thought at the first moments of the deposition of an electrolytic layer, when said layer has an average thickness of the order of one nanometer or less.
    [0002] The invention aims to overcome, in whole or in part, these disadvantages of the prior art. According to the invention, such an object is achieved by using a conductive thin layer deposited on the inner face of a transparent wall of an electrochemical cell. This conductive thin layer 15 performs a dual function: it constitutes a working electrode, on the surface of which the electrochemical reaction to be studied takes place; it also constitutes an optical contrast enhancing layer, optimized for illumination and observation by its rear face (opposite to the face in contact with the electrolyte contained in the electrochemical cell). Thus the observation of the electrode is made with a high contrast and its back side, so as not to be hindered by the simultaneous presence of a local electrochemical characterization means on the front face. The invention also aims to provide a new method of manufacturing structured thin layers, implementing a photoelectrochemical printing process. According to this aspect of the invention, a light pattern can be projected onto the back side of a conductive thin layer as mentioned above. Under appropriate chemical conditions (see for example the document WO 2009/037311), a deposit occurs selectively in the only illuminated (or, conversely, unlit) regions, or in any case with a growth rate of the deposition dependent on the 'light intensity. A structured thin film is thus obtained whose structure reproduces that of the projected optical pattern. The growth of this layer can be followed in real time, and with a high optical contrast, by observation of the rear face of the thin layer. An object of the invention is therefore an electrochemical device comprising a fluidic cell having an internal volume that can be filled by a fluid and at least a first and a second electrode in contact with said internal volume, characterized in that at least said first electrode comprises a thin layer of conductive and optically absorbing material at at least one wavelength X in the visible spectrum, near infrared or near ultraviolet, said thin layer being arranged on or in an inner surface of a wall of said fluidic cell at least partially transparent to said wavelength X. According to various embodiments of such a device: said thin film may have a thickness less than or equal to 150 nm, preferably less than or equal to 40 nm, and still more preferably less than or equal to 20 nm. Said wall may form, with said thin layer, a window having, at said wavelength λ, a transmittance of greater than or equal to 30%, preferably greater than or equal to 60% and more preferably greater than or equal to 80%. %. Said thin layer may be made of a material chosen from: a metal; a semiconductor; graphene; boron doped diamond; a layer of nanoparticles; a metal oxide; a conductive polymer. Said thin layer may be produced by implantation and in particular by ion implantation in said wall. At least the portion of said wall in direct contact with said thin layer may be made of transparent conductive material at said wavelength X. The device may comprise a probe probe of local microscopy of which a conductive tip constitutes said second electrode. . Alternatively, said second electrode may have a flat surface arranged facing said thin layer parallel to the latter. Said wall carrying said thin layer can be removable. The device may also comprise a third reference electrode in contact with said internal volume. Another object of the invention is an electrochemical apparatus comprising such an electrochemical device, as well as an optical reflection imaging device, arranged to illuminate said thin layer through said wall at at least said wavelength λ, and to observe it also through said wall. According to various embodiments of such an apparatus: said optical reflection imaging device may comprise an optical microscope. The apparatus may also comprise a local probe microscope having a local probe, arranged to scan said thin layer, a conductive tip of which forms said second electrode. - The apparatus may also include a potentiostat or amperostat connected to said electrodes. Said internal volume may contain a fluid at least partially transparent to said wavelength X, the thickness e1 of said thin layer being between one half and one half of a thickness corresponding to a first minimum of reflectivity when it is illuminated at said wavelength X through said wall. Said optical reflection imaging device may, furthermore, be adapted to illuminate said thin film at at least one wavelength X minimizing the reflectivity in correspondence of said first minimum, with a tolerance of plus or minus 10% and of preference of plus or minus 5%. The apparatus may also include an optical projection device arranged to project a light pattern onto said thin layer through said wall. Yet another object of the invention is a method of in situ study of an electrochemical reaction comprising the following steps: applying a potential difference between two electrodes of such an electrochemical apparatus, a fluid capable of causing a reaction electrochemical being contained in said internal volume, whereby a so-called electrochemical reaction takes place on the surface of said first electrode; and - illuminating and observing said first electrode through said wall by means of said optical imaging device. Yet another object of the invention is an electrochemical printing process comprising the steps of: - applying a potential difference between said first and said second electrode of such an electrochemical apparatus, a fluid capable of causing a deposition reaction photoelectrochemical being contained in said internal volume; simultaneously, projecting a light pattern onto said thin layer through said wall by means of said optical projection device, whereby a photoelectrochemical deposition reaction takes place on the surface of said first electrode, controlled by the local lighting of said surface by said light pattern; and - observing said first electrode through said wall by means of said optical imaging device. Advantageously, said optical projection device can be used to project on said thin layer a light pattern 30 corresponding to a first wavelength or a first set of wavelengths and said optical imaging device can be used to illuminating said thin layer at at least said wavelength λ, different from said first wavelength or not belonging to said first wavelength set. Other characteristics, details and advantages of the invention will emerge on reading the description given with reference to the appended drawings given by way of example and which represent, respectively: FIG. 1, the contrast with which is observed a sample deposited on an absorbing layer amplifying contrast at different wavelengths; FIG. 2A, a device and an apparatus according to an embodiment of the invention; FIG. 2B a detailed view of a fluidic cell of a device according to another embodiment of the invention; and FIGS. 3A and 3B two possible embodiments of a contrast amplifying absorbing layer. The use of antireflection layers (or layers "214") to increase the optical contrast of an object observed by optical microscopy by reflection is a technique known for many years and very powerful; in particular, it enabled the first observation of molecular marches by Langmuir and Blodgett in 1937 and, more recently, the visualization of graphene layers by Novoselov et al. Let / be the luminous intensity reflected by the object to be observed, deposited on a support, and Is that reflected by the support alone; then, the contrast with which the sample is observed is worth C = (/ - / s) / (/ + / s). It is understood that the absolute value of this contrast takes its maximum value (equal to 1) when / 5 = 0, that is to say when the support has a zero reflectivity, or when the object supported at a reflectivity nothing. In the simplest case, the condition Is = 0 is satisfied by using as a carrier a transparent substrate on which is deposited a thin layer, also transparent, whose thickness and refractive index are selected timely. In the case of a single antireflection layer illuminated at normal incidence with an incident medium (from which the illumination comes) and a transparent and semi-infinite emerging medium (the substrate), the following conditions are obtained: n12 = no3 (1a ) niei = L / 4 (1b) where n1 is the refractive index (real) of the layer, no and n3 the refractive indices (also real) of the incident and emerging media, e1 the thickness of the layer and X the wavelength of illumination. Some authors have also considered the use of absorbent materials for producing antireflection or contrast enhancement layers. For example - The article by SG Moiseev and SV Vinogradov "Design of Antireflection Composite Coating Based on Metal Nanoparticle", Physics of Wave Phenomena, 2011, Vol 10, No. 1, pages 47-51 discusses the conditions that a weakly absorbing thin layer deposited on a transparent substrate to cancel reflection at normal incidence at the air-substrate interface, the lighting being effected by air. This document also describes an absorbent thin layer of composite material containing metal nanoparticles that satisfies these conditions in an approximate manner. This study is based on an analytical study limited to materials with very low absorption and difficult to generalize. - The following articles: - Mr A. Kats et al. "Nanometer optical coatings based on strong interference effects in higly absorbing media", Nature Materials, Vol. 12, January 2013, pages 20 - 24; and - R. M. A. Azzam et al. "Antieflection of an absorbing substrate by an absorbing thin film at normal incidence", Applied Optics, Vol. 26, No. 4, pages 719-722 (1987) disclose absorbent antireflection layers deposited on substrates which are in turn absorbent. Here again, only particular cases are described which are difficult to generalize. Document US Pat. No. 5,216,542 discloses an antireflection coating for a glass substrate comprising, on a front face of the substrate (intended to be illuminated), a multilayer structure comprising transparent layers and absorbent TiNX layers and, on a rear face of said substrate. , a single absorbent TiNX layer whose thickness is such as to ensure a low reflectivity. An idea underlying the present invention is to provide an absorbent and conductive antireflection layer (knowing that most conductive materials absorb light, the reciprocal is not true), deposited on a transparent substrate and sized to serve as a layer contrast amplifier when used in an "inverted" or "reverse" configuration, ie with illumination and observation through said substrate, the latter having a refractive index greater than that of the emerging medium ( or "ambient").
    [0003] Another idea underlying the present invention is to use such an absorbent and conductive antireflection layer as the working electrode of an electrochemical cell, said transparent substrate of which forms a wall. The modifications of the absorbing and conducting antireflection layer induced by the electrochemical reactions which take place on its surface induce significant changes in its reflectivity when it is illuminated and observed through the substrate, which makes it possible to follow the progress of said reactions at the surface. using an optical device such as a microscope. Since the observation of the conductive layer serving as a working electrode is done by its rear face (in contact with the transparent wall), electrochemical imaging techniques using a local conductive probe (Electrochemical Scanning Microscopy, or SECM "Scanning ElectroChemical Microscopy", Electrochemical Tunneling Scanning Tunneling Microscopy (ECSTM), etc.) can be performed simultaneously without disturbing said observation.
    [0004] A layer of absorbent material having a thickness E1 having a complex dielectric constant E1 = E1-I1 "between two transparent semi-infinite media, called" incident medium "and" emerging medium "having real dielectric constants, is considered. Co and E2, respectively, A plane light wave of wavelength X is incident on the layer coming from the incident medium It is considered that this wavelength X belongs to the visible spectrum (390 nm - 750 nm), near infrared ( 750 - 3000 nm) or near ultraviolet (300 - 390 nm) The dielectric constant values are at the wavelength X. No real material is perfectly transparent, therefore any dielectric constant has an imaginary component not however, it is conventionally considered that a dielectric constant is "real", corresponding to a "transparent" material, when the imaginary part of its refractive index at this wavelength is less than 10-4 or even 10-6. It is recalled that, considering non-magnetic materials, the index of refraction - possibly complex - is given by the square root of the dielectric constant. Advantageously, the imaginary part El "of the dielectric constant of the absorbent thin layer may be greater than or equal to 10-4, or even 10-3, or even 10-2, in which case it is found that the reflection of the wave The electromagnetic plane is zero when: if '= E "(:" 2 and () - / M el- = 2n El "Equation (2) is reduced to the well-known condition n12 = no2, valid for the transparent antireflection layers, when it tends to 0 and in the case of non-magnetic materials. (2) (3) lo A simple inspection of equation (3) makes it possible to notice very important points: - First, the fact that the refractive index no = .F) of the incident medium must be greater than that n2 = '/, otherwise the thickness e1 5 would be negative, so the absorbance of the thin film introduces asymmetry into the system. in the case of a highly absorbent material such as a metal, the thickness e1 is very small, of the order of one nanometer. a is not surprising since suppression of reflection results from destructive interference between the light amplitudes reflected by the front and rear faces of the thin layer; if it were too thick, the light incident on one side would be completely absorbed before reaching the opposite side, and this interference effect could not occur. It is difficult to find a material satisfying condition (2) because normally it is negative. However, even if this condition is not satisfied, the reflectivity is minimized when the condition (3) is minimized. A timely choice of the wavelength may eventually make it possible to approach the condition (2). By way of example, the case of a layer of gold deposited on a substrate (incident medium) made of glass and in contact with an aqueous medium (emergent medium) is considered, the whole being illuminated at a wavelength. X through the incident medium. For X = 488 nm we have co = 2.31, e1 = 1.8, e1 = 4.32, e2 = 1.77 We choose a thickness e1 = 3 nm, which is reasonably close to the ideal value - 2.5 nm - calculated using equation (3) for X = 488 nm, then deposited on the thin gold layer an object consisting of a small disk of dielectric material with a subscript n3 = 1.46 (e3 = 1.208) Figure 1 shows the contrast with which this object is observed, as a function of its thickness e3, and for several wavelengths of illumination: 300 nm, 350 nm, 400 nm, 450 nm, 488 nm, 550 nm, 600 nm, 650 nm It can be verified that in the case X = 488 nm, for thicknesses e3 less than 20 nm the contrast is negative (dark object on a background clear) and its absolute value increases by about 4% for each additional nanometer of thickness.As a contrast on the one hand out of 10.000 (0.01%) remains easily observable, it is understood that the absorbent antireflective layer allows to observe objects of average thickness less than 10 μm (such an "object" is composed of scattered molecules on the surface of the absorbent antireflection layer). Figure 1 shows that the wavelength λ = 488 nm optimizes the contrast, but the observation is possible, with a satisfactory contrast, at other wavelengths.
    [0005] If the incident medium or the emerging medium are composite media (for example if the incident medium is a multilayer structure), the dielectric constants et and E2 may be effective dielectric constants. If the incident medium and / or the emerging medium are partially absorbent, replace co and E2 with the real parts of their complex dielectric constants. If we consider magnetic materials, we must consider refractive indices instead of dielectric constants. In general, a very thin layer of an absorbent material forms an antireflection layer when it is deposited on a transparent or semi-transparent substrate, illuminated through this substrate and brought into contact with a transparent, semi-transparent emerging medium. transparent or even turbid. Such a layer can cancel the reflection or have a minimum of non-zero reflectivity. In any case, it allows the formation of high-contrast optical images of objects that can be very thin and transparent, such as molecular layers (referred to as a "contrast enhancer layer"). In practice, for a given wavelength of illumination and incident and emergent media, it will be possible to determine - by means of an analytical model or a numerical computation - the first minimum of reflectivity (i.e. say at the smallest thickness minimizing the reflectivity). The thickness of the layer may coincide with this minimum, or deviate voluntarily as will be explained later. More advantageously, it will be possible to minimize the reflectivity with respect to the thickness e1 and the wavelength λ, which can be obtained by well-known numerical techniques. Alternatively, we can base ourselves on equation (2) by choosing the illumination wavelength X which minimizes (E; _ - ./E,:)2, then apply equation (3) to determine e1 . When such a thin layer is made of a conductive material, such as a metal, such a configuration is very suitable for electrochemical applications, as will be explained with reference to FIG. 2A. This figure, which is not to scale, illustrates a device and an apparatus according to one embodiment of the invention. The device comprises a fluidic cell, possibly microfluidic, CF, with two ports P1, P2 allowing the introduction and the evacuation - possibly continuously, in the form of a circulation - of a fluid EL, which can notably be an electrolyte. In the following we will consider the case where the fluid EL is a transparent liquid; however, it may be a partially absorbent liquid, even turbid or even a gas. The CF cell can be completely closed or partially open, for example at its upper part. The bottom of the cell is formed by a transparent wall PT, typically glass, on the inner face (that is to say in contact with the liquid) which is deposited a thin metal layer CMM. The PT wall 20 can also be semi-transparent; advantageously, this wall and the CMM thin film form a transmittance window greater than or equal to 30%, preferably greater than or equal to 60% and more preferably greater than or equal to 80%. Advantageously, the PT wall and the CMM thin film 25 may constitute or be part of a removable assembly, intended to be replaced after having been used to study an electrochemical reaction or after a photoelectrochemical printing operation. It is then a "consumable" of the apparatus of Figure 2A. The wall PT preferably has a thickness of less than or equal to 1 mm or even 250 μm.
    [0006] The thickness of the CMM layer is chosen, according to the refractive indices of the fluid EL and the wall PT so as to reduce the reflectivity of the window compared to the case where it would be absent. For example, the equation (3) can be satisfied at least approximately and for a wavelength X in the visible spectrum, near infrared or near ultraviolet. In this case, regardless of the fluid EL, there will be: λ / 3 el - 27 - / - El "corresponding to the limiting case e2 = 0. In addition, in this case, the refractive index of the wall PT must be greater than that of the fluid EL The thin metal layer CMM constitutes the working electrode of an electrochemical cell formed inside the fluidic cell CF, this electrochemical cell comprises at least one second electrode (counter-electrode) and preferably a third electrode (reference electrode) In the embodiment of Fig. 2A, the counter-electrode CE is constituted by the conductive tip of a local probe SLC of a MSL local probe microscope - such as an atomic force or tunnel effect microscope - scanning the surface of the CMM layer, according to the principles of electrochemical scanning microscopy Alternatively, (FIG. 2B) it could be a planar electrode, fixed for example to an upper wall of the cell f next to the CMM working electrode. The reference electrode ER has, in this embodiment, the shape of a needle immersed in the fluid EL; in other embodiments it could be, for example, a pellet integrated into the PT wall but isolated from the CMM electrode. The MSL local probe microscope moves the SLC probe onto the surface of the CMM layer; a potentiostat PS (which, in the embodiment of FIG. 2, is integrated in the MSL microscope) or an amperostat keeps said probe at a potential V1, said layer at a potential V2 and the reference electrode at a potential VR and measures the current flowing between said probe and said layer. Typically, in a manner known per se, the potential of the reference electrode ER and of the counter-electrode CE is set and the current between said counterelectrode and the working electrode CMM is measured, but other ways of proceed are possible. An optical reflection imaging device such as an optical microscope MO is arranged on the outer face of the transparent wall PT to acquire an optical image of the electrochemical reactions taking place on the CMM metal layer serving as working electrode. Indeed these reactions alter said layer, or the composition of the EL electrolyte in its vicinity, whether by corrosion, electrochemical deposition or other redox reactions; these alterations, however small, are visualized with a high contrast thanks to the optical properties of the CMM layer, discussed above. In this respect, it may be advantageous to choose a thickness of the CMM layer voluntarily deviating from the minimum reflectivity so as to have a quasi-linear variation of the reflectivity with the thickness. For example, the thickness of the layer may correspond to the "nominal" thickness minimizing the reflectivity with a tolerance of ± 10% or even ± 30%, or even ± 50%, or even be between half and twice this nominal thickness. In the example of FIG. 2A, the microscope MO comprises a light source SL generating a light beam FL, an objective OBJ focusing this beam on the rear face of the CMM layer and collecting the light backscattered by the latter, a separator of LSF beam to separate the light directed to the CMM layer and the one coming from it and a CIM image sensor. The FL beam light can be monochromatic or polychromatic, spatially coherent or incoherent, polarized or unpolarized. The CMM layer may optionally be functionalized, for example to produce an electrochemical sensor, such as a glucose sensor. In this case, it will be necessary to take into account the presence of a functionalization layer when sizing the thickness of the CMM layer and possibly the illumination wavelength and observation X which, like this has been indicated above, can be done numerically using the general theory of thin optical layers. The apparatus of Figure 2A can be used for the in-situ study of an electrochemical reaction. For example, it may be able to correlate the electrical currents flowing in the electrodes under the applied voltage conditions and the mass changes of the CMM layer or its neighborhood estimated from the optical reflection observations. This allows in particular to control the quality or the progress of an electrochemical process, for example surface treatment, etching, deposition, etc. and / or measure the kinetics. It is also possible to control such a process by modifying the voltage values of the electrodes according to the optical observation. Intermediate layers may be present between the PT wall and the CMM thin metal layer. For example, as shown in FIG. 3A, which is not to scale, a relatively thick intermediate layer C1 (of the order of 200 nm, for example) of transparent conductive material may be provided, allowing standardize the electrical voltage of the CMM layer; indeed, because of its small thickness, the latter has a fairly high electrical resistance per unit area, leading to a non-uniform voltage when a current flows through it. Here again, it will be necessary to take into account the possible presence of one or more intermediate layers during the design of the thin metal layer CMM. FIG. 3B illustrates another alternative embodiment of the invention, in which the CMM layer is implanted (for example by ion implantation) into the PT wall, and is therefore a few nanometers below the surface of the latter. . The embodiments of FIGS. 3A and 3B can be combined by implanting an absorbent and conductive layer into a thicker layer of transparent conductive material 30 deposited on a wall, for example made of glass. So far only the case of a metallic CMM layer has been considered. This stress can however be released, and the metal be replaced by any other absorbent conductor suitable for electrochemical applications, for example graphene or a highly doped (degenerate) semiconductor, in particular boron-doped diamond. The latter material, in particular, has interesting properties of chemical inertness, hardness and conductivity, as well as a very good surface state. It may also be a layer of nanoparticles, a layer of a metal oxide or a conductive polymer. The optical microscope MO may be of a type different from that illustrated in FIG. 2A. For example, it may comprise a polarizer and a crossover analyzer, or more generally orientable, for an observation in polarized light. It may also be a differential interference contrast microscope with two Wollaston prisms and a cross polarizer and analyzer. The apparatus of FIG. 2A also includes a DPO optical projection device arranged to project a light pattern onto said thin layer through said wall. This device comprises a second light source SLP for generating a projection light beam, an optical intensity mask or modulator MOI arranged on the path of said projection light beam to define said light pattern and an optical system SO forming with the objective OBJ an afocal system. A second beam splitter LSFP makes it possible to superimpose the projection light beam on the illumination light beam FL upstream of the objective OBJ. Advantageously, the projection light beam has a wavelength (or wavelengths) different from that (s) used (s) for the observation of the layer. It is not important that the reflectivity reduction condition be satisfied for the wavelength (s) used for projection of the light pattern. As explained above, the illumination by the light pattern makes it possible to spatially modulate the electrochemical reactivity of the surface of the CMM electrode. This can be exploited to create structured, absorbed or covalently grafted thin layers on said electrode, the PT wall serving as a substrate. To do this, it is possible to use a planar counter-electrode parallel to the CMM layer (see FIG. 2B) or, on the contrary, a tip sweeping said layer. In this second case, the structuring is obtained both electrically and optically. The structured layer reported on the surface of the CMM electrode may have chemical, electrical and / or optical properties different from those of said electrode. By the repetition of optically controlled electrochemical growth steps three-dimensional structures can be constructed in stages, for example providing electronic functions for microelectronic applications.
    [0007] Simultaneous observation through the wall, using the MO microscope, allows monitoring of this process, or even its enslavement.
    权利要求:
    Claims (20)
    [0001]
    REVENDICATIONS1. An electrochemical device comprising a fluidic cell (CF) having a fluid-filled internal volume (EL) and at least a first (CMM) and a second (CE) electrode in contact with said internal volume, characterized in that at least said first electrode comprises a thin layer of conductive and optically absorbing material at at least one wavelength λ in the visible spectrum, near infrared or near ultraviolet, said thin layer being arranged on or in an internal surface of a wall (PT) of said fluidic cell at least partially transparent to said wavelength X.
    [0002]
    2. Electrochemical device according to claim 1 wherein said thin layer has a thickness less than or equal to 150 nm, preferably less than or equal to 40 nm and more preferably less than or equal to 20 nm.
    [0003]
    3. Electrochemical device according to one of the preceding claims wherein said wall forms, with said thin layer, a window having, at said wavelength X, a transmittance greater than or equal to 30%, preferably greater than or equal to 60% and more preferably greater than or equal to 80%.
    [0004]
    4. Electrochemical device according to one of the preceding claims wherein said thin layer is made of a material selected from: - a metal; a semiconductor; graphene; Boron doped diamond; a layer of nanoparticles; a metal oxide; a conductive polymer.
    [0005]
    5. Electrochemical device according to one of the preceding claims wherein said thin layer is made by implantation 5 in said wall.
    [0006]
    6. Electrochemical device according to one of the preceding claims wherein at least the portion of said wall in direct contact with said thin layer is made of transparent conductive material at said wavelength X.
    [0007]
    7. Electrochemical device according to one of the preceding claims comprising a probe of local probe microscopy (SLC), a conductive tip constitutes said second electrode. 15
    [0008]
    8. Electrochemical device according to one of claims 1 to 6 wherein said second electrode has a flat surface arranged opposite said thin layer parallel to the latter. 20
    [0009]
    9. Electrochemical device according to one of the preceding claims wherein said wall carrying said thin layer is removable.
    [0010]
    10. Electrochemical device according to one of the preceding claims also comprising a third electrode (ER), called reference, in contact with said internal volume.
    [0011]
    An electrochemical apparatus comprising an electrochemical device according to one of the preceding claims, and an optical reflection imaging (MO) device arranged to illuminate said thin film through said wall at at least said length of film. X wave, and to observe it also through said wall.
    [0012]
    The electrochemical apparatus of claim 11 wherein said reflective optical imaging device comprises an optical microscope.
    [0013]
    13. Electrochemical apparatus according to one of claims 11 or 12 also comprising a local probe microscope (MSL) having a local probe (SLC), arranged to scan said thin layer, a conductive tip forms said second electrode.
    [0014]
    14. Electrochemical apparatus according to one of claims 11 to 13 also comprising a potentiostat or amperostat connected to said electrodes. 15
    [0015]
    Electrochemical apparatus according to one of claims 11 to 14 wherein said internal volume contains a fluid at least partially transparent to said wavelength X, the thickness e1 of said thin layer being between half and double the a thickness corresponding to a first minimum of reflectivity when illuminated at said wavelength X through said wall.
    [0016]
    An electrochemical apparatus according to claim 15 wherein, furthermore, said reflection optical imaging device is adapted to illuminate said thin film at at least one X wavelength minimizing the reflectivity in correspondence of said first minimum, with tolerance of plus or minus 10% and preferably plus or minus 5%.
    [0017]
    17. Electrochemical apparatus according to one of claims 11 to 16 further comprising an optical projection device (DPO) 30 arranged to project a light pattern on said thin layer through said wall. 10
    [0018]
    18. A method for in situ study of an electrochemical reaction comprising the following steps: - applying a potential difference between two electrodes of an electrochemical apparatus according to one of claims 11 to 17, a fluid capable of causing an electrochemical reaction being contained in said internal volume, whereby a so-called electrochemical reaction takes place on the surface of said first electrode; and - illuminating and observing said first electrode through said wall by means of said optical imaging device. 10
    [0019]
    19. An electrochemical printing process comprising the following steps: applying a potential difference between said first and said second electrode of an electrochemical apparatus according to claim 17, a fluid capable of causing a photoelectrochemical deposition reaction being contained; in said internal volume; simultaneously, projecting a light pattern onto said thin layer through said wall by means of said optical projection device, whereby a photoelectrochemical deposition reaction takes place on the surface of said first electrode, controlled by the local lighting of said surface by said light pattern; and - observing said first electrode through said wall by means of said optical imaging device. 25
    [0020]
    The electrochemical printing method according to claim 19 wherein said optical projection device is used to project on said thin layer a light pattern corresponding to a first wavelength or a first set of wavelengths and wherein said optical imaging device is used to illuminate said thin film at at least said wavelength λ, different from said first wavelength or not belonging to said first wavelength set.
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    同族专利:
    公开号 | 公开日
    EP3108038B1|2018-08-08|
    US20170173577A1|2017-06-22|
    EP3108038A1|2016-12-28|
    FR3017743B1|2017-10-20|
    WO2015121462A1|2015-08-20|
    CN106029953A|2016-10-12|
    CN106029953B|2019-03-01|
    US10189019B2|2019-01-29|
    JP2020079791A|2020-05-28|
    JP2017506758A|2017-03-09|
    JP6836257B2|2021-02-24|
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    法律状态:
    2016-01-25| PLFP| Fee payment|Year of fee payment: 3 |
    2017-01-26| PLFP| Fee payment|Year of fee payment: 4 |
    2018-01-29| PLFP| Fee payment|Year of fee payment: 5 |
    2020-02-28| PLFP| Fee payment|Year of fee payment: 7 |
    2021-02-26| PLFP| Fee payment|Year of fee payment: 8 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1451233A|FR3017743B1|2014-02-17|2014-02-17|ELECTROCHEMICAL DEVICE AND APPARATUS AND METHODS USING SUCH APPARATUS|FR1451233A| FR3017743B1|2014-02-17|2014-02-17|ELECTROCHEMICAL DEVICE AND APPARATUS AND METHODS USING SUCH APPARATUS|
    EP15704551.9A| EP3108038B1|2014-02-17|2015-02-16|Electrochemical device and apparatus and methods implementing such an apparatus|
    CN201580009208.2A| CN106029953B|2014-02-17|2015-02-16|Electrochemical apparatus and device and the method for implementing such device|
    US15/118,379| US10189019B2|2014-02-17|2015-02-16|Electrochemical device and apparatus and methods implementing such an apparatus|
    PCT/EP2015/053181| WO2015121462A1|2014-02-17|2015-02-16|Electrochemical device and apparatus and methods implementing such an apparatus|
    JP2016569018A| JP2017506758A|2014-02-17|2015-02-16|Electrochemical device and apparatus and method for implementing such an apparatus|
    JP2019234307A| JP6836257B2|2014-02-17|2019-12-25|Electrochemical devices and equipment and how to implement such equipment|
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