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    • 专利摘要:
    Bolometric detector (100) comprising at least: - a substrate (102); a membrane (104) suspended above the substrate (102) by support members (108); an absorber element comprising at least one MIM structure formed of a lower metal element (112), an upper metal element (114) and a dielectric element (110, 116, 118, 120, 122) disposed between lower metal element (112) and the upper metal element (114); a thermometer element comprising at least one thermometric material (116); wherein the membrane (104) has at least the upper metal element (114) of the MIM structure and the thermometric material (116), and wherein the thermometric material (116) is part of the dielectric element (110, 116 , 118, 120, 122) of the MIM structure.
    公开号:FR3017456A1
    申请号:FR1451091
    申请日:2014-02-12
    公开日:2015-08-14
    发明作者:Ujwol Palanchoke；Salim Boutami；Jean-Louis Ouvrier-Buffet；Jean-Jacques Yon
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD AND PRIOR ART The invention relates to the field of thermal detectors, and more specifically that of uncooled thermal detectors such as resistive type bolometric detectors. DETAILED DESCRIPTION OF THE INVENTION The bolometric detectors according to the invention are advantageously used to perform wavelength detection in the infrared range. To perform a detection in the infrared range, an uncooled thermal infrared detector generally comprises a sensitive element whose temperature increases when it receives infrared radiation whose wavelength belongs for example to the band III (between 8 to 12 um) which is characteristic of the temperature and emissivity of the elements observed by this type of detector. The increase in temperature of the sensitive element causes a variation of an electrical property of the material of this sensitive element: appearance of electrical charges in the material of the sensitive element by pyroelectric effect, variation of the capacity of the material of the sensing element by changing its dielectric constant, varying the electrical resistance of the semiconductor or metal material of the sensing element, etc. To obtain an efficient operation of such a thermal infrared detector, the material of the sensitive element must fulfill three main conditions: it must have a low thermal capacity, a good thermal insulation of the active layer (which comprises the sensitive element) vis-à-vis its support (these first two conditions involving an embodiment of the sensitive element thin layer) and finally a high sensitivity of the conversion effect of the heating of the material into an electrical signal.
    [0002] Monolithic infrared imagers operating at ambient temperature are for example manufactured by directly connecting a matrix of sensitive elements to a silicon multiplexing circuit of the CMOS or CCD type. To improve performance, the thermal infrared detector can be encapsulated under vacuum or in an atmosphere comprising a gas that is poorly heat-conductive. The housing in which the thermal infrared detector is encapsulated then comprises a window transparent to infrared radiation intended to be detected by the thermal infrared detector. In a resistive-type bolometric detector, the incident radiation is absorbed by the sensing element of the detector, which causes an increase in its temperature and induces a variation of the electrical resistance of the sensing element of the detector. This variation of resistance generates a variation of voltage or current across the detector, forming the signal delivered by the detector. Figures 1 and 2 respectively show a perspective view and a top view of a thermal detector of electromagnetic radiation 1, that is to say a bolometer. This type of detector 1 comprises a thin membrane 10 suspended above a support substrate 13. This membrane 10 comprises a first layer of material forming the absorber element of the detector 1 and a second layer of material forming the thermometer element of the detector 1. Other detectors, similar to that shown in FIGS. 1 and 2, are generally present on the support substrate 13. The membrane 10 is suspended mechanically above substrate 13 by means of support elements 11 to which heat-insulating arms 12 are attached which are mechanically connected to the membrane 10. Under the effect of the incident radiation received by the detector 1, the first layer of the membrane 10 forming the absorber element heats up and transmits its temperature. at the second layer of the membrane 10 forming the thermometer element. According to the state of the art, different types of thermometer element are possible among which the thermistor is a widely used option. The support substrate 13 comprises an integrated electronic circuit on a silicon wafer, this circuit comprising, on the one hand, devices for stimulating and reading the thermometer element of each of the detectors 1, and on the other hand multiplexing components which allow to put in series the signals from the different thermometer elements to a small number of outputs so that these signals can be operated by a conventional imaging system. The sensitivity of the thermal detectors is notoriously improved thanks to the presence of the heat-insulating arms 12 in the thermal connection between the support substrate 13 and the membrane 10, these arms making it possible to limit the thermal losses of the membrane 10 and consequently to preserve his warm up. The electrical interconnection between the thermometer element of the detector 1 and the reading elements of the electronic circuit is provided by an electrically conductive layer, generally metallic, which is arranged on the heat-insulating arms 12, and by the support elements 11. which are electrically conductive. The sensitive material (absorber element) of the membrane 10 may be a semiconductor material such as polycrystalline or amorphous silicon, of p or n type, weakly or strongly resistive. It can also be a vanadium oxide (V205 or V02) developed in a semiconductor phase. Generally, the sensitive material rests on an insulating support of the membrane 10, for example based on SiO 2, SiO, SiN, or ZnS, which provides the mechanical rigidity of the membrane 10. It can also be totally encapsulated with one of these insulating materials. Different evaluations show that vanadium oxide-based compounds perform better in terms of TCR (relative change in resistance with temperature) and noise in 1 / f than metallic materials such as platinum or other semi-materials. conventional conductors such as amorphous silicon or amorphous germanium or their compounds. However, there are other materials with a high temperature coefficient. Since the size of an imager is fixed by the cost of the component and the optics, the only way to increase the spatial resolution of an imager of a given size is to reduce the step with which the detectors of this imager are made. imager. But with constant technology and architecture, the reduction of the surface of the detector causes a decrease in the thermal resolution of the detector mainly because of the degradation of the response (sensitivity) of the detector. In addition to improving the performance of the thermometric material, it is also necessary to increase, or at least maintain at a high level of performance, the thermal resistance and the filling factor of the detectors. In practice, the system is optimized when the pitch of the elementary detector is between about 1 to 2 times the average wavelength to be detected. This approach presupposes a filling factor close to 100% which is always sought in the field of bolometers because by construction, there is no possibility of inter-modulation by the substrate (crosslinking of the detectors). Thus, for a detector device operating in the 8-14 μm band, the pitch of the detectors can be reasonably reduced to about 10 μm.
    [0003] In addition to step reduction, there are also important perspectives for wavelength-selective bolometric detectors matrices with the integration of selective metal filters / absorbers directly on the detector, without the insertion of a spectral filter. between the stage and the detector. Joseph J. Talghader et al., Light: Science & Application (2012), "Spectral selectivity in infrared thermal detection", shows various developments in this field. These prospects for improvement (step reduction, selective absorption of radiation) should not, however, be obtained at the expense of the thermal time constant of these detectors. Periodic metal structures can be used as filters in the infrared. These filters can be logically introduced on the optical path upstream of the bolometric structure. Another possibility is to carry out a selective absorption directly at the level of the bolometric plate, as described in the document FR 2 941 297. In this alternative, periodic metal patterns are made directly on the bolometric plate and correspond to the thermometer material of the detector. The presence of a metallic periodic structure consisting on the one hand of the anchoring structures (nails) and on the other hand of integrated patterns on the board and in the thermal insulation system produces a reflective filter for detecting electromagnetic radiation. according to certain wavelengths. A localized conversion of the semiconductor thermometric material (semiconducting ferrite) into a metallic material (iron) of high conductivity thus makes it possible to add an additional function to the detectors without modifying the manufacturing process of the bolometric detectors. The characteristics of the filter are determined by the pitch of the patterns and their dimensions. The patterns can be circles, squares, triangles, crosses. Depending on the pitch of the pixel and the wavelength to reflect, some patterns must be split into two parts. As long as the break between these parts is of very small size in front of the wavelength, the operation of the filter is not altered. The proportion of semiconductor material converted into metallic material is between 25% and 50% of the initially deposited semiconductor material.
    [0004] However, this has the effect of significantly modifying the current lines in the thermometer material by constriction effect, and thus to introduce additional low frequency noise. In addition, the conversion of the semiconductor material into metallic material which must be carried out limits the materials that can be used to produce this type of structure: for example, it is not possible to use amorphous silicon.
    [0005] The papers "Wavelength-tunable microbolometers with metamaterial absorbs" by Thomas Maier and Hubert Brückl, OPTICS LETTERS / Vol 34, No. 19 / October 1, 2009, and "Multispectral Microbolometers for the Midinfrared" by Thomas Maier and Hubert Brückl, OPTICS LETTERS Vol 34, No. 19 / November 15, 2010, describe a metallic periodic structure disposed on the bolometric plate.
    [0006] The selective absorption is performed in the metamaterial MIM type (that is to say, corresponding to a metal-insulator-metal type stack) developed above the bolometric plate. At identical thermal resistance, however, this configuration has the disadvantage of increasing the thermal time constant by at least a factor of 2, thus limiting the capture frequency that can be obtained with such detectors.
    [0007] This approach is no longer compatible with operation in imaging mode (for example to monitor a cloud of chemical escaping from an industrial site). It is mentioned in these documents that the presence of the continuous metal film in the entire membrane and thus also in the insulating arms makes it possible to keep the heat capacity of the detector constant by reducing the thermal resistance. This approach, which is difficult to implement from a technological point of view, results in a degradation of the signal-to-noise ratio (that is to say an increase in the NEDT, or "Noise Equivalent Differential Temperature") of minus a factor 2. The document FR 2 977 937 A1 describes a bolometric detector comprising a centered MIM structure and of reduced dimensions with respect to the total surface of the detector. Reducing the size of the absorber element thus leaves a larger area for developing the thermal insulation arms of the detector. This type of detector has the characteristic of being selective and small step. However, this structure also generates an increase in the thermal time constant of the detector, which limits the capture frequency that can be obtained with this type of detector. The material constituting the thermometer element of a detector is almost always the source of low frequency noise. This comes from its low-temperature elaboration because of the "above IC" approach widely practiced in the field. Also, to reduce its impact on performance in terms of NEDT, it tends to increase its volume and therefore the heat capacity of the bolometric board. The thermal time constant of the bolometric detectors is determined by the product of the thermal resistance and the heat capacity. Its specification results from "system considerations". This is a design constraint (CAD, technology). In practice, to arbitrate between the thermal resistance and the heat capacity of the detector is to favor the signal at the expense of the noise level or vice versa. It is also more relevant to increase the thermal resistance than the volume of the material constituting the detector.
    [0008] In addition, incorporating an additional structure on the membrane in order to obtain a particular function, such as for example a selective absorption of certain wavelengths, inevitably results in a degradation of one of the parameters constituting the performance of the bolometric detectors. know the thermal time constant or the noise level.
    [0009] SUMMARY OF THE INVENTION An object of the present invention is to propose a new type of bolometric detector that is selective with respect to wavelengths intended to be detected and optimized in terms of low frequency noise and time constant. thermal, which can be achieved with a large number of materials, and whose thermal time constant is compatible with operation of the bolometric detector in imager mode. For this purpose, the present invention proposes a bolometric detector comprising at least: a substrate; a membrane suspended above, or facing, the substrate by support elements; an absorber element comprising at least one MIM structure formed of a lower metal element, an upper metal element and a dielectric element disposed between the lower metal element and the upper metal element; a thermometer element comprising at least one thermometric material; wherein the membrane comprises at least the upper metal element of the MIM structure and the thermometric material, and wherein the thermometric material is part of the dielectric element of the MIM structure. The dielectric element of the MIM structure may correspond to an element comprising at least one portion of insulating material, or semiconductor, of electrical resistivity greater than about 0.1 Q.cm and of permittivity whose value of the real part is positive and whose value of the imaginary part is less than about 20%, or less than about 10%, of that of the real part at a wavelength for which the absorption efficiency of the bolometric detector is maximum. The bolometric detector according to the invention thus proposes to produce an absorbent structure by using the thermometric material as a constituent element of the absorber element which comprises one or more MIM (Metal-Insulator-Metal) type structures in order to realize selective bolometric imagers. Thus, by using the thermometric material to form part of the dielectric element of the MIM structure, the bolometric detector according to the invention has a good thermal time constant which is compatible with a use of the bolometric detector within an imager . In addition, the one or more MIM structures of the bolometric detector make it possible to obtain a good selectivity which is moreover easily parameterizable according to the characteristics with which the MIM structures are made. Finally, the structure of such a bolometric detector does not limit the choice of materials used to form the absorber element of the detector, which does not penalize the performance of such a bolometric detector because of the low frequency noise which remains low. Such a bolometric detector is well suited to perform a detection of wavelengths belonging to the band III, that is to say between about 8 μm and 12 μm. The expression "MIM structure" here designates a stack comprising at least one dielectric element disposed between an upper metal element and a lower metal element, and capable of selectively absorbing certain wavelengths according to its dimensions and the materials of the structure.
    [0010] The thermometric material may have an electrical resistivity greater than about 0.1 0.cm and a permittivity of which a value of the real part is positive and a value of the imaginary portion is less than about 20%, or less than about 10% , that of the real part at a wavelength for which the absorption efficiency of the bolometric detector is maximal. Thus, the thermometric material may be a semiconductor such as a-si, a-SiGe, vanadium oxide, FeO, Fe304, more generally a metal oxide. A distance between the lower metal element and the upper metal element may be less than or equal to about V (4n), or advantageously equal to about V (10n), with λ corresponding to a wavelength for which the output of absorption of the bolometric detector is maximal and n corresponding to the effective refractive index of the MIM structure. According to a first embodiment, the membrane may comprise the lower metal element of the MIM structure. In this configuration, the MIM structure is formed entirely by the membrane of the bolometric detector. In this case, the bolometric detector may further comprise a reflector disposed on the substrate, and a reflective cavity formed between the reflector and the lower metal element of the MIM structure such as a distance between the reflector and the lower metal element. of the MIM structure is equal to about half a wavelength for which the absorption efficiency of the bolometric detector is maximal. According to another embodiment, the lower metal element of the MIM structure may be disposed on the substrate such that a void space forming part of the dielectric element of the MIM structure is disposed between the membrane and the lower metal element. . In this configuration, the membrane forms only part of the MIM structure of the bolometric detector. The membrane may further comprise a first dielectric layer electrically insulating the upper metal element vis-à-vis the thermometric material, and a second dielectric layer electrically insulating the thermometric material vis-à-vis the lower metal element, and the first dielectric layer and the second dielectric layer may be part of the dielectric element of the MIM structure. The absorber element may comprise several MIM structures each comprising an upper metal element distinct from the upper metal elements of the other MIM structures, and in which the thermometric material is common to the MIM structures. In this case, each MIM structure may comprise a lower metal element distinct from the lower metal elements of the other MIM structures, or the MIM structures may comprise a lower metal element common to all the MIM structures.
    [0011] The thermometric material may be electrically connected to an electronic circuit of the substrate by at least one electrically conductive layer of the membrane and by the support members. The membrane can be mechanically and electrically connected to the support members by heat insulating arms. These heat insulating arms can be formed by materials present in the membrane. The invention also relates to a thermal detection device comprising a plurality of bolometric detectors as described above, said bolometric detectors being arranged forming a matrix.
    [0012] The bolometric detectors can be arranged by forming several sub-matrices, the bolometric detectors of each of said sub-matrices being able to perform a detection of a range of wavelengths different from those intended to be detected by the bolometric detectors of the sub-arrays. other sub-matrices.
    [0013] The matrix may comprise at least one bolometric debasing detector comprising a membrane suspended above the substrate and thermally connected to the substrate. The matrix may comprise at least one reference bolometric detector having no MIM structure.
    [0014] BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIGS. 1 and 2 schematically represent a thermal infrared detector according to the prior art; - Figures 3A and 3B respectively show a sectional sectional view and a schematic top view of a bolometric detector object of the present invention, according to a first embodiment; FIG. 4 represents the absorption efficiency as a function of the wavelength of a bolometric detector according to the first embodiment; - Figures 5 and 6 show schematically a profile sectional view of a bolometric detector object of the present invention, respectively according to a second and a third embodiment; - Figure 7 schematically shows a portion of a multispectral detection device, object of the present invention, according to a particular embodiment. Identical, similar or equivalent parts of the different figures described below bear the same numerical references so as to facilitate the passage from one figure to another. The different parts shown in the figures are not necessarily in a uniform scale, to make the figures more readable. The different possibilities (variants and embodiments) must be understood as not being exclusive of each other and can be combined with one another. DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS Referring firstly to FIGS. 3A and 3B, which respectively represent a profile sectional view and a top view of a bolometric detector 100, or an infrared thermal detector, according to a first embodiment of FIG. production. The sectional sectional view shown in FIG. 3A is made along an axis AA 'shown in FIG. 3B. The bolometric detector 100 corresponds to a bolometer or micro-bolometer for performing a detection in the infrared range, especially in the band III, that is to say a detection of wavelengths between about 8 μm and 12 μm. The bolometric detector 100 comprises a substrate 102, comprising for example a wafer, or wafer, of silicon, forming a mechanical support of the bolometric detector 100. The substrate 102 comprises in particular an integrated electronic circuit (not visible in FIGS. 3A and 3B) allowing to supply the bolometric detector 100 with electricity and also to read the signals delivered by the bolometric detector 100. This electronic circuit may also comprise a multiplexing circuit for processing signals delivered by several bolometric detectors 100, similar to that shown in the figures 3A and 3B, made above the substrate 102. Each bolometric detector 100 corresponds to a pixel of a detection matrix formed above the substrate 102 and which is electrically connected to the electronic circuit. The bolometric detector 100 comprises a membrane 104 suspended above, or facing, the substrate 102 via heat-insulating arms 106 to which the membrane 104 is mechanically connected and via support elements 108, forming anchoring pads, or nails, ensuring the mechanical maintenance of the membrane 104 and the heat-insulating arms 106 above the substrate 102. A void space 110, forming a cavity of thickness e (this thickness corresponding to the dimension between the membrane 104 and the substrate 102) is present between the substrate 102 and the membrane 104, as well as between the substrate 102 and the heat-insulating arms 106. The thermal insulation between the membrane 104 and the substrate 102 is ensured by the arms of thermal insulation 106 as well as by the empty space 110. The membrane 104 comprises elements forming both the absorber element and the thermometer element of the bolometric detector 100. The absorber element is formed of several elements. MIM structures realized next to each other, advantageously in the form of a two-dimensional matrix of N MIM structures. In the example of FIGS. 3A and 3B, the membrane 104 comprises 9 MIM structures arranged in the form of a 3 × 3 matrix. Alternatively, it is for example possible to have a matrix of 4x4 or 5x5 MIM structures. In general, the membrane 104 has a number N of MIM structures between 1 and 25. Each of the MIM structures comprises a lower metal element 112, made in the form of a portion of a metal layer which, in the first embodiment embodiment, is common to all the MIM structures of the membrane 104, which allows to maximize the selective absorption achieved by the MIM structures of the bolometric detector 100. Each of the MIM structures also comprises an upper metal element 114. Each element higher metal 114 here has a section, in a plane parallel to one side of the substrate 102 opposite which is the membrane 104 (parallel to the plane (X, Y) in Figures 3A and 3B), square. Alternatively, the shape of the upper metal members 114 could be different, for example round, rectangular, triangular, cruciform, etc. The metal elements 112 and 114 are advantageously based on one or more materials used for the interconnections of the integrated circuits, such as for example aluminum, tungsten, copper, titanium, etc. With respect to an absorber element which would be formed of a single MIM structure, the use of several upper metal elements 114 to form several MIM structures not only makes it possible to improve the selectivity of the detection performed by the bolometric detector 100, but also to capture more light, i.e. to improve the absorption efficiency of the bolometric detector 100, because of the greater amount of incident light that is filtered / absorbed by the larger number of MIM structures. The thicknesses of the lower metal element 112 and the upper metal elements 114 are low so as not to increase the heat capacity of the membrane 104, and are in addition greater than about 2 times the skin thickness of the materials used. The thicknesses (dimensions along the Z axis) of the metal elements 112 and 114 are for example between about 40 nm and 100 nm. In addition, to prevent these metal elements 112 and 114 achieve non-selective absorption of wavelengths, the metal elements 112 and 114 advantageously comprise a resistance per square less than about 1 Ohm / square. Finally, the MIM structures also comprise, between the lower metal element 112 and the upper metal elements 114, dielectric elements enabling the MIM structures to excite plasmonic resonances at given wavelengths intended to be detected by the bolometric detector. 100, thus conferring good spectral selectivity on the bolometric detector 100. The plasmonic resonances occur laterally (in the (X, Y) plane) in the dielectric elements of the MIM structures, opposite the upper metallic elements 114, as in a cavity of Fabry-Perot type. These dielectric elements comprise a thermometric material 116 thus serving as both a thermometer element of the bolometric detector 100 and a dielectric element, or an insulator, of the MIM structures which together form the absorber element of the bolometric detector 100. The thickness (dimension along the Z axis) of the thermometric layer 116 is for example between about 20 nm and 300 nm. The dielectric elements of the MIM structures are also formed by a first dielectric layer 118, here common to all the MIM structures and which also acts as an electrical insulator between the upper metallic elements 114 and the thermometric material 116, and therefore between the thermometer element and the absorber element of the bolometric detector 100, as well as a second dielectric layer 120 which furthermore acts as an electrical insulator between the lower metal element 112 and the thermometric material 116. The first dielectric layer 118 and the second dielectric layer 120 each correspond to a dielectric layer or a stack of several very thin dielectric layers whose thickness is for example between about 5 nm and 100 nm, or between about 5 nm and 20 nm, and comprising, for example, Si02, ZnS or SiN to ensure the best possible electrical insulation between the thermometric material 116 and metal elements 112 and 114. The material or materials and thicknesses of these dielectric layers 118, 120 are also chosen such that these layers are transparent or weakly absorbent vis-à-vis the wavelengths to be detected by the bolometric detector 100. The values of the wavelengths that are detected depend in particular on the dimensions, in the plane (X, Y), and the period (or not) of the upper metal elements 114 of the MIM structures. Thus, each of the upper metal elements 114 may comprise, in the plane (X, Y), dimensions (corresponding for example to the dimensions of the sides or the diameter, according to the shape of the elements) equal to approximately V (2n), with  corresponding to the wavelength for which the absorption efficiency of the bolometric detector 100 is maximum, and n corresponding to the effective refractive index of the MIM structure and whose value is close to the mean refractive index of the layers between the metal elements of the MIM structure, or an odd multiple of V (2n). In addition, the upper metal elements 114 may be arranged next to each other with a period less than X. In each of the MIM structures, the total thickness of the dielectric elements disposed between the upper metal element 114 and the metal element lower 112, that is to say the sum of the thicknesses of the first dielectric layer 118, the second dielectric layer 120 and the thermometric material 116, and corresponding to the distance between the metal elements 112 and 114, is smaller or equal to about V (4n). Advantageously, this total thickness of the dielectric elements of the MIM structures is less than or equal to approximately V (10n). The detector 100 further comprises a third dielectric layer 122 which is common to the membrane 104 and to the heat-insulating arms 106, and on which is disposed an electrically conductive layer 124 which is also common to the membrane 104 and to the arms. thermal insulation 106. The electrically conductive layer 124, which is for example based on Ti, TiN or Pt, has for example a thickness between about 5 nm and 100 nm and has a resistance per square of between about 100 and 1000. Ohm by square. The third dielectric layer 122 is for example based on SiO 2 or SiON, and has a thickness for example of between about 5 nm and 50 nm. Finally, dielectric portions 126 cover portions of the electrically conductive layer 124 in the heat-insulating arms 106. The material and the thickness of the dielectric portions 126 are for example similar to those of the third dielectric layer 122. In FIG. the membrane 104, portions of the electrically conductive layer 124 are in electrical contact with the thermometric material 106, thus ensuring the power supply of the membrane 104 and the reading of the detection signals produced. In addition, in the heat insulating arms 106, portions of the electrically conductive layer 124 are in electrical contact with the support members 108. Thus, because the support members 108 are based on an electrically conductive material , as for example of the AI, Cu or WSi, and are electrically connected to the input stage of the integrated electronic circuit to the substrate 102, and the fact that the portions of the electrically conductive layer 124 of the membrane 104 and heat insulating arms 106 form a continuous electrical connection, the thermometric material 116 is electrically connected to the integrated electronic circuit of the substrate 102 via the support members 108 and the electrically conductive layer 124. The materials and thicknesses of the elements forming the membrane 104 are also chosen such that the membrane 104 has a good mechanical strength above the substrate 102 in order to avoid a bend In the bolometric detector 100, the thermometric material 116 is advantageously used both as a thermometer element of the bolometric detector 100 and as a dielectric element of the absorber element of the bolometric detector 100, within the MIM structures of the detector. 100. These MIM structures confer a high selectivity of the wavelengths detected by the bolometric detector 100, this selectivity being easily adjusted via the choice of dimensions, and therefore also the number, of MIM structures present in the membrane 104. the thermometric material 116 can fulfill these two functions, it is advantageously chosen from materials whose electrical resistivity is greater than or equal to about 0.1 Ohm.cm and whose dielectric constant, or permittivity, at the wavelength for which the absorption efficiency of the bolometric detector 100 is maximum, has a positive real part and an imaginary part zero or very small in front of the real part, for example less than about two tenths (20%) or one tenth (10%) of the real part. Thus, the thermometric material 116 is for example an amorphous or polycrystalline semiconductor such as Si, a-Si, a-Si: H, Ge, a-Ge, a-Ge: H, SiGe, α-SiGe, α-SiGe: H, SiC, α-SiC, α-SiC: H, or vanadium oxide, FeO, Fe304, or more generally a metal oxide. These examples of materials all have a resistivity sufficient to not alter the optical operation of the MIM structure and a TCR for example between about 1% and 5%, unlike a thermometric material corresponding to Ti, Pt or manganite of lantane which have too low resistivity, less than about 0.1 Ohm.cm. In addition, the examples of materials previously mentioned for the thermometric material 116 are transparent or weakly absorbent vis-à-vis the wavelengths to be detected by the bolometric detector 100, and have a high temperature coefficient and low noise low frequency. Depending on the nature of the thermometric material 116, its thickness is for example between about 50 nm and 200 nm. In this first embodiment, the thickness, or height, e of the empty space 110 does not intervene in the absorption efficiency of the bolometric detector 100. Thus, this thickness e can be of any value, but at least such that the membrane 104 and the substrate 102 are spaced from each other by a distance sufficient to avoid contact between them because of the mechanical and electrostatic stresses that may be experienced by the membrane 104. This thickness e can also be adjusted so as to limit the parasitic absorption from the heat insulating arms 106 and the contact regions formed by the portions of the electrically conductive layer 124 in contact with the thermometric material 116. This thickness e is for example between about 1 μm and 5 μm. FIG. 4 represents the absorption efficiency as a function of the wavelength, here around 10 μm, obtained with the bolometric detector 100 previously described, comprising a thermometer material 116 made of amorphous silicon having a thickness of about 150 nm, metal elements 112 and 114 having a thickness of about 100 nm, the upper metal members 114 being each square-shaped with a side equal to about 1.375 μm and arranged relative to one another with a period or step equal to about 2.75 μm (i.e. made with a filling rate of the surface of the membrane 104 of the order of 25%). By adjusting the dimensions and the pitch of the upper metal elements 114 of the MIM structures, it is possible to modify the value of the wavelength for which the absorption made by the detector 100 is maximum, thus making it possible to produce multispectral detectors. In FIG. 4, the detection is carried out around a wavelength equal to approximately 10 μm over a width of approximately 1 μm (for an absorption efficiency of at least 0.5). The detection peak, which is approximately 10 μm in FIG. 4, can be displaced in a range of values, for example between approximately 2 μm and 16 μm. Referring now to Figure 5 which shows a sectional sectional view of the bolometric detector 100 according to a second embodiment. With respect to the first embodiment previously described, the membrane 104 does not comprise a single lower metal element 112 common to all of the MIM structures. Here, each of the MIM structures of the absorber element of the bolometric detector 100 comprises a distinct lower metal element 112.
    [0015] Each of the lower metal elements 112 is arranged opposite one of the upper metal elements 114 and here comprises dimensions, in the plane (X, Y), substantially similar to those of the upper metal element 114 opposite which it is arranged. . The spacing between the lower metal elements 112, ie the pitch of these elements 112, is also similar to that between the upper metal elements 114. In a variant, the dimensions and / or the shape and / or the not lower metal elements 112 could be different from those of the upper metal elements 114. The thicknesses of the lower metal elements 112 are here similar to each other, and for example of the same value as that of the lower metal element 112 previously described for the first embodiment. In addition, portions of the second dielectric layer 120 are disposed between the lower metal members 112 to isolate them from each other. The other elements of the bolometric detector 100 according to this second embodiment are similar to those of the bolometric detector 100 according to the first embodiment.
    [0016] With respect to a single lower metal element 112 common to all the MIM structures of the absorber element of the bolometric detector 100, as in the first embodiment, the use of several different lower metal elements 112 for each of the MIM structures of the bolometric detector 100 according to this second embodiment makes it possible to reduce the thermal constant of the bolometric detector 100, to the detriment of a less good selectivity. Thus, the choice concerning the structure of the lower metal element (s) 112 is made according to the constraints to be fulfilled by the bolometric detector 100 with regard to the desired time constant and selectivity. In addition, the use of several distinct lower metal elements 112 is not disadvantageous with respect to the residual absorption obtained insofar as this configuration makes it possible to limit the regions likely to dissipate the electromagnetic energy received outside. the desired resonance, and prevents electrically conductive areas with high square resistance from being exposed to the incident radiation.
    [0017] As a variant of the first and second embodiments previously described, the bolometric detector 100 may further comprise a reflector disposed on the substrate 102, opposite the membrane 104, so that the cavity 110 forms a reflective cavity. In this case, the thickness e of the cavity 110 is chosen so that the distance between the reflector, corresponding for example to a metal layer disposed on the upper face of the substrate 102, and the or one of the lower metal elements 112 is equal to about V2 so that the cavity 110 forms a reflective cavity to maximize the reflection between the reflector and the membrane 104. Whatever the embodiment, such a reflective cavity V2 is advantageous. FIG. 6 represents a profile sectional view of the bolometric detector 100 according to a third embodiment. As in the first embodiment, a single lower metal element 112 is common to all the MIM structures of the absorber element of the bolometric detector 100. By cons, unlike the first embodiment in which the lower metal element 112 is disposed in the membrane 104 suspended above the substrate 102, the lower metal element 112 is here arranged not in the suspended membrane 104, but on the substrate 102 such that the cavity 110 is formed between the lower metal element 112 and the In this third embodiment, the MIM structures of the absorber element of the bolometric detector 100 therefore each comprise an upper metal element 114 and the lower metal element 112 (here common to all the MIM structures). In addition, the dielectric elements of the MIM structures are formed by the thermometric material 116, the first dielectric layer 118, the second dielectric layer 120 (which may alternatively be omitted), the third dielectric layer 122 and the cavity 110. In this third embodiment, the thickness e of the cavity 110 is taken into account in the calculation of the dielectric thickness of the MIM structures which may be less than or equal to V4n, or advantageously less than or equal to V1On. In this third embodiment, the thickness of the lower metal element 112 is chosen to be sufficiently thick to limit losses by Joule effect within it, and for example such that the resistivity of the lower metal element 112 is at least equal to at about 0.1 Ohm / square. With respect to the first embodiment, this third embodiment has the advantage of lowering the time constant of the bolometric detector 100. In addition, the bolometric detector 100 according to this third embodiment can be realized at lower cost because the method implemented to realize this bolometric detector 100 follows the process of the conventional steps of the methods used to produce bolometers. In addition, with respect to the bolometers of the prior art, only one additional level of photolithography can be realized to form the upper metallic elements 114. As a variant of this third embodiment, several lower metal elements 112, each forming the element lower metal of one of the MIM structures, may be arranged on the substrate 102. Whatever the embodiment, the membrane 104 of the bolometric detector 100 is advantageously made of thin layers and the thermal insulation arm 106 of the bolometric detector 100 are finely defined to achieve effective thermal insulation of the membrane 104 relative to the substrate 102 and to the electronic circuit formed in the substrate 102. The membrane 102 and the heat-insulating arms 106 are for example made on a sacrificial layer disposed on the substrate 102, preferably made of polyimide and having a thickness of between 1 and 5 μm. The thickness of this sacrificial layer corresponds to the thickness e of the cavity 110 which will be formed between the membrane 104 and the substrate 102, and for example equal to about half the wavelength for which the absorption efficiency The bolometric detector 100 is maximum when a reflector is present on the substrate 102 so as to form a reflective cavity under the membrane 104. In the case of the third embodiment, the lower metal element 112 is formed on the substrate 102 prior to the sacrificial layer which is then deposited by covering the lower metal element 112. The thin dielectric layers of the membrane 104, that is to say the first dielectric layer 118, the second dielectric layer 120 and the third dielectric layer 122, are for example made by low temperature deposition such as sputter deposition or plasma decomposition (PECVD). The etching of these layers, carried out after their deposition, can be performed by plasma etching. The electrically conductive layer 124 is formed by deposition, for example by sputtering, and then structured by etching, for example by chemical etching or by plasma etching. The thermometric material 116 is for example deposited at low temperature, for example by sputtering, thermal decomposition (LPCVD) or plasma (PECVD). The optional doping of the thermometric material 116 is carried out by introducing a doping gas (for example BF3 or PH3) into the reactor used for its deposition, or by ion implantation. The etching of the thermometric material 116 is generally performed by a plasma assisted etching process. Whatever the embodiment, several bolometric detectors 100 are advantageously made collectively next to each other in the form of a matrix, each bolometric detector 100 forming a pixel of this detection matrix. In each bolometric detector 100, the resistance of the thermometric material varies as a function of the temperature of the imaged scene. However, the variations of the temperature of the scene which are intended to be measured are very small. In order to detect these variations more easily, the electronic circuit integrated in the substrate 102 may comprise a high-gain amplifier or integrator stage in order to amplify the signals delivered by the bolometric detectors 100. In order to increase the reading sensitivity of the bolometric detectors 100 , it is possible to derive the invariant fraction of the measured current, corresponding to the background temperature of the imaged scene, in a so-called "basement" branch of the detectors, to send only the variable part of the current, corresponding to the variations of temperatures to be measured, to the amplifier or integrator stage of the electronic circuit to avoid saturating it. For this, one solution may be to use as baseloading resistor so-called bashing bolometers, made from the same materials as those used to make the bolometric detectors 100, possibly thermalised at the temperature of the focal plane and which do not realize stage of the detection of temperature of the scene because these basecasting bolometers do not comprise heat insulating arm and therefore comprise their membrane thermally connected to the substrate by the support elements.
    [0018] In addition, it is possible for a matrix of bolometric detectors 100 to be formed of several sub-matrices each comprising one or more bolometric detectors 100 as previously described, these bolometric detectors comprising MIM structures of different dimensions and / or shapes. a sub-matrix to another such that each sub-matrix is able to perform a detection of a range of wavelengths different from those able to be detected by the other sub-matrices, thus forming a detection matrix multispectral. FIG. 7 schematically represents a portion of a detection device 1000 comprising a multispectral detection matrix. This multispectral detection matrix comprises eight sub-matrices 1002.1 to 1002.4 and 1002.6 to 1002.9 each comprising one or more bolometric detectors 100 as previously described. In the example described here, each of these sub-matrices 1002.1 to 1002.4 and 1002.6 to 1002.9 comprises n * n bolometric detectors arranged in a square matrix, with n integer included for example between 1 and 10. Each of the sub-matrices 1002.1 to 1002.4 and 1002.6 to 1002.9 is able to perform a detection of a range of wavelengths defined by the parameters (dimensions, shape, pitch) of the MIM structures of the bolometric detectors of each sub-matrix. In the example of FIG. 7, the detector (s) of the submatrix 1002.5 serve as a reference for the bolometric detectors of the other sub-matrices 1002.1 to 1002.4 and 1002.6 to 1002.9. The detector (s) of the submatrix 1002.5 are not sensitive to the radiation received by the detection device 1000, for example by making this or these detectors such that they do not comprise a MIM structure, such as the bolometric detectors of the other sub-units. matrices. Thus, by subtracting the value or values of the signal (s) delivered by the detector (s) from the submatrix 1002.5 to the values of the signals delivered by the bolometric detectors of the other sub-matrices, it is possible to suppress the common mode present in the signals delivered by the detectors of the other sub-matrices 1002.1 to 1002.4 and 1002.6 to 1002.9. In addition, one or more sub-matrices 1002.1 to 1002.4 and 1002.6 to 1002.9 may include so-called bashing bolometers as previously described. Whatever the embodiment, the dimensions of the bolometric detectors 100 are a function of the size of the pixel to be formed by the bolometric detectors 100.20
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. A bolometric detector (100) comprising at least: a substrate (102); a membrane (104) suspended above the substrate (102) by support members (108); an absorber element comprising at least one MIM structure formed of a lower metal element (112), an upper metal element (114) and a dielectric element (110, 116, 118, 120, 122) disposed between lower metal element (112) and the upper metal element (114); a thermometer element comprising at least one thermometric material (116); wherein the membrane (104) has at least the upper metal element (114) of the MIM structure and the thermometric material (116), and wherein the thermometric material (116) is part of the dielectric element (110, 116 , 118, 120, 122) of the MIM structure.
    [0002]
    The bolometric detector (100) according to claim 1, wherein the thermometric material (116) has an electrical resistivity greater than about 0.1 Ω · cm and a permittivity of which a value of the real part is positive and a value of the imaginary part is less than about 20% of that of the real part at a wavelength for which the absorption efficiency of the bolometric detector (100) is maximum.
    [0003]
    The bolometric detector (100) according to one of the preceding claims, wherein a distance between the lower metal element (112) and the upper metal element (114) is less than or equal to V (4n), with λ corresponding to a wavelength for which the absorption efficiency of the bolometric detector (100) is maximum and n corresponding to the effective refractive index of the MIM structure.
    [0004]
    4. bolometric detector (100) according to one of the preceding claims, wherein the membrane (104) comprises the lower metal element (112) of the MIM structure.
    [0005]
    The bolometric detector (100) according to claim 4, further comprising a reflector disposed on the substrate (102), and a reflective cavity (110) formed between the reflector and the lower metal member (112) of the MIM structure such as that a distance between the reflector and the lower metal element (112) of the MIM structure is equal to about half a wavelength for which the absorption efficiency of the bolometric detector (100) is maximum.
    [0006]
    The bolometric detector (100) according to one of claims 1 to 3, wherein the lower metal element (112) of the MIM structure is disposed on the substrate (102) such as a void space (110) forming part the dielectric element (110, 116, 118, 120, 122) of the MIM structure is disposed between the membrane (104) and the lower metal element (112).
    [0007]
    7. bolometric detector (100) according to one of the preceding claims, wherein the membrane (104) further comprises a first dielectric layer (118) electrically insulating the upper metal element (114) vis-à-vis the thermometric material (116), and a second dielectric layer (120) electrically isolating the thermometric material (116) from the lower metal member (112), and wherein the first dielectric layer (118) and the second dielectric layer (120) are part of the dielectric element (110, 116, 118, 120, 122) of the MIM structure.
    [0008]
    8. bolometric detector (100) according to one of the preceding claims, wherein the absorber element comprises a plurality of MIM structures each comprising an upper metal element (114) distinct from the higher metal elements (114) of other MIM structures, and wherein the Thermometric material (116) is common to MIM structures.
    [0009]
    The bolometric detector (100) according to claim 8, wherein each MIM structure comprises a lower metal element (112) distinct from the lower metal elements (112) of the other MIM structures, or wherein the MIM structures comprise a lower metal element ( 112) common to all MIM structures.
    [0010]
    10. A bolometric detector (100) according to one of the preceding claims, wherein the thermometric material (116) is electrically connected to an electronic circuit of the substrate (102) by at least one electrically conductive layer (124) of the membrane (104). ) and by the support elements (108).
    [0011]
    11. bolometric detector (100) according to one of the preceding claims, wherein the membrane (104) is mechanically and electrically connected to the support members (108) by heat insulating arms (106).
    [0012]
    12. Thermal detection device (1000) comprising a plurality of bolometric detectors (100) according to one of the preceding claims, said bolometric detectors (100) being arranged forming a matrix.
    [0013]
    Device (1000) according to claim 12, wherein the bolometric detectors (100) are arranged forming several sub-matrices (1002.1 - 1002.4; 1002.6 - 1002.9), the bolometric detectors (100) of each of said sub-matrices ( 1002.1 - 1002.4; 1002.6 - 1002.9) being capable of detecting a range of wavelengths different from those intended to be detected by the bolometric detectors (100) of the other sub-matrices (1002.1 - 1002.4; 1002.6 - 1002.9 ).30
    [0014]
    14. Device (1000) according to one of claims 12 or 13, wherein the matrix comprises at least one bolometric debasing detector having a membrane suspended above the substrate and thermally connected to the substrate.
    [0015]
    15. Device (1000) according to one of claims 12 to 14, wherein the matrix comprises at least one bolometric reference detector having no MIM structure.
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    FR3017456B1|2017-06-23|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    EP0869341A1|1997-03-31|1998-10-07|Nec Corporation|Thermal infrared detecting device|
    WO2001081879A2|2000-04-25|2001-11-01|Raytheon Company|Microbolometer and manufacturing method|
    WO2002008707A1|2000-07-25|2002-01-31|Kevin Liddiard|Active or self-biasing micro-bolometer infrared detector|
    US20060060784A1|2004-09-17|2006-03-23|Korea Institute Of Science And Technology|Infrared absorption layer structure and its formation method, and an uncooled infrared detector using this structure|
    FR2977937A1|2011-07-15|2013-01-18|Centre Nat Rech Scient|BOLOMETRIC DETECTOR WITH IMPROVED PERFORMANCES|
    US5021663B1|1988-08-12|1997-07-01|Texas Instruments Inc|Infrared detector|
    EP0526551B1|1990-04-26|1996-12-11|The Commonwealth Of Australia|Semiconductor film bolometer thermal infrared detector|
    JP3839487B2|1995-11-15|2006-11-01|ロッキードマーティンアイアールイメージングシステムズインク|Dual-band multilevel microbridge detector|
    WO2000012986A1|1998-08-31|2000-03-09|Daewoo Electronics Co., Ltd.|Bolometer including a reflective layer|
    JP3597069B2|1999-01-12|2004-12-02|日本電気株式会社|Thermal infrared array sensor for detecting multiple infrared wavelength bands|
    US6307194B1|1999-06-07|2001-10-23|The Boeing Company|Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method|
    US6507021B1|2000-11-15|2003-01-14|Drs Sensors & Targeting Systems, Inc.|Reference bolometer and associated fabrication methods|
    US7145143B2|2002-03-18|2006-12-05|Honeywell International Inc.|Tunable sensor|
    JP3944465B2|2003-04-11|2007-07-11|三菱電機株式会社|Thermal infrared detector and infrared focal plane array|
    US7622717B2|2007-08-22|2009-11-24|Drs Sensors & Targeting Systems, Inc.|Pixel structure having an umbrella type absorber with one or more recesses or channels sized to increase radiation absorption|
    FR2941297B1|2009-01-19|2011-02-11|Commissariat Energie Atomique|METHOD FOR MANUFACTURING A BOLOMETRIC DETECTOR|
    DE102009045302A1|2009-10-02|2011-04-07|Robert Bosch Gmbh|Microstructured sensor e.g. infra red thermometer for detection of infra red radiation, has thermopile measuring structure for measuring temperature difference between measuring membrane and reference membrane|
    JP5644121B2|2010-01-26|2014-12-24|セイコーエプソン株式会社|Thermal type photodetector, thermal type photodetector, electronic device, and method for producing thermal type optical detector|
    CN102564601A|2010-12-22|2012-07-11|精工爱普生株式会社|Thermal detector, thermal detection device, electronic instrument, and thermal detector manufacturing method|
    US8748808B2|2012-05-16|2014-06-10|Institut National D'optique|Detection and correction of a loss of calibration of microbolometer thermal imaging radiometers|
    EP2893770A4|2012-09-06|2016-07-06|Vaisala Oyj|Optical layered structure, manufacturing method, and use|
    FR3026483A1|2014-09-26|2016-04-01|Commissariat Energie Atomique|BOLOMETRIC DETECTOR WITH MIM STRUCTURES OF DIFFERENT DIMENSIONS|FR3026497B1|2014-09-25|2016-10-28|Commissariat Energie Atomique|OPTICAL COUPLER INTEGRATED ON A SUBSTRATE AND COMPRISING THREE ELEMENTS|
    FR3026483A1|2014-09-26|2016-04-01|Commissariat Energie Atomique|BOLOMETRIC DETECTOR WITH MIM STRUCTURES OF DIFFERENT DIMENSIONS|
    WO2016197010A1|2015-06-05|2016-12-08|Flir Systems, Inc.|Systems and methods for enhanced dynamic range infrared imaging|
    FR3042272B1|2015-10-09|2017-12-15|Commissariat Energie Atomique|BOLOMETER WITH HIGH SPECTRAL SENSITIVITY.|
    FR3045148B1|2015-12-15|2017-12-08|Ulis|DETECTION DEVICE WITH SUSPENDED BOLOMETRIC MEMBRANES WITH HIGH ABSORPTION EFFICIENCY AND SIGNAL-TO-NOISE RATIO|
    FR3059824B1|2016-12-07|2019-06-21|Ulis|INFRARED IMAGE SENSOR|
    CN110476416B|2017-01-26|2021-08-17|菲力尔系统公司|System and method for infrared imaging in multiple imaging modes|
    CN109282903B|2017-07-20|2020-11-13|南京大学|High-performance CMOS infrared micro-bolometer based on surface electromagnetic wave resonance|
    FR3072458A1|2017-10-12|2019-04-19|Commissariat A L'energie Atomique Et Aux Energies Alternatives|SOURCE OF INFRARED RADIATION|
    法律状态:
    2016-02-29| PLFP| Fee payment|Year of fee payment: 3 |
    2017-02-28| PLFP| Fee payment|Year of fee payment: 4 |
    2018-11-30| ST| Notification of lapse|Effective date: 20181031 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1451091A|FR3017456B1|2014-02-12|2014-02-12|BOLOMETRIC DETECTOR WITH MIM STRUCTURE INCLUDING A THERMOMETER ELEMENT|FR1451091A| FR3017456B1|2014-02-12|2014-02-12|BOLOMETRIC DETECTOR WITH MIM STRUCTURE INCLUDING A THERMOMETER ELEMENT|
    US14/617,042| US20150226612A1|2014-02-12|2015-02-09|Bolometric detector with a mim structure including a thermometer element|
    JP2015023943A| JP2015152597A|2014-02-12|2015-02-10|Radiation detector including mim structure having temperature measurement element|
    EP15154421.0A| EP2908109A1|2014-02-12|2015-02-10|Bolometric detector with MIM structure including a thermometer element|
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