专利摘要:
Procedure and device for estimating the equivalent temperature in photovoltaic modules in random conditions of measurement (different from the standard measurement conditions for photovoltaic modules). The equivalent temperature obtained by the method and the device of the invention can be used, together with a curve of current intensity vs. voltage obtained in said random measurement conditions, to obtain/extrapolate the electrical characteristics (curve of current intensity vs. voltage) of a photovoltaic module under standard conditions of measurement with very low uncertainty. (Machine-translation by Google Translate, not legally binding)
公开号:ES2665811A1
申请号:ES201830221
申请日:2018-03-07
公开日:2018-04-27
发明作者:Eduardo Lorenzo Pigueiras;Luis NARVARTE FERNÁNDEZ;Francisco MARTÍNEZ MORENO;José Manuel CARRILLO SALINAS
申请人:Universidad Politecnica de Madrid;
IPC主号:
专利说明:

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Procedure and equivalent temperature estimation device in modules
photovoltaic
DESCRIPTION
Object of the invention
The present invention relates to an equivalent temperature estimation procedure in photovoltaic modules for characterization in real sun with low uncertainty, in its own location.
The present invention also relates to the equivalent temperature estimation device in photovoltaic modules by means of which the said procedure can be implemented.
The procedure and the equivalent temperature estimation device in photovoltaic modules object of the present invention has application in the field of industry dedicated to the design, management and maintenance of photovoltaic panels.
Technical problem to be solved and Background of the invention
The photovoltaic generators consist of multiple photovoltaic modules associated in series and in parallel, to achieve the levels of power, voltage and current required by the applications to which they provide electrical energy.
The electrical behavior of the generators and the modules that compose them is characterized by their electrical response to the so-called Standard Measurement Conditions (EMC).
The so-called Standard Measurement Conditions are equivalent to:
Irradiance: 1,000 W / m2;
Spectral distribution: AM 1.5;
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Incidence of solar rays: perpendicular to the surface of the module;
Cell temperature: 25 ° C.
Normally, the electrical response is understood as the curve IV (current vs. voltage) in the first quadrant (positive voltages and current) and from it the most relevant characteristics such as short-circuit current, open circuit voltage and the power at the point of maximum power.
The standard procedure for measuring the I-V curve in EMF is to use solar simulators, which are equipment capable of imposing precisely the EMC conditions, so, if they are well calibrated, they produce results with low uncertainty.
Both module factories and laboratories specialized in photovoltaic technology have solar simulators among their equipment. From the IV curve thus measured, the characteristic values of some particularly relevant parameters are determined, such as the maximum power delivered by the module in EMC, which we will call P ^, where “M” indicates maximum and “*” indicates standard measurement conditions (EMC ).
Alternatively to cause the standard measurement conditions (EMF) using solar simulators, in principle it is also possible to measure the electrical response to real sun, that is, in any operating condition (irradiance + 1,000 W / m2; spectrum + AM1.5; incidence other than perpendicular and cell temperature different from 25 ° C) and subsequently correct the response thus measured at EMF. A particularly simple way of doing this is to simultaneously measure the IV curves of the module that is intended to be characterized and of another module whose electrical response characteristics in EMF are well known in advance (for example, because it has been previously measured in a solar simulator) and that serves as a reference, taking care that both modules are coplanar. Then, based on the assumptions that both modules receive the same solar irradiance and that both work at the same temperature, the EMC electrical characteristics of the first module can be estimated. For example, following the power, these assumptions translate to:
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pm, c = j1 £ x p * m, r [Equation 1]
Rm.r
Where the subscripts "C" and "R" indicate, respectively, the module to be characterized and the module that serves as a reference.
Another way to obtain the electrical characteristic in EMC of a photovoltaic module from measurements in real sun, this time, without using a reference module, is to directly correct the curve IV measured in the module that is intended to characterize, by Some mathematical procedure, such as that prescribed in IEC 60891.
However, and with total independence of the chosen form, this way of measuring in real sun always entails additional uncertainty due to the difficulties of estimating what are the operating conditions in real sun that, in one way or another, are always present in that correction.
For the purpose of estimating the equivalent operating temperature of the photovoltaic module, in real sun, it should be noted that, on the one hand, the temperature of the module is not homogeneous, nor throughout the same module (the temperature varies from one cell to another of the module) or along the same generator (which means that there is no point at which a temperature can be measured that is representative of the thermal behavior of the module as a whole) and, on the other hand, its own encapsulation of photovoltaic modules prevents measuring that temperature directly.
Thus, the high uncertainty of direct measurements in real sun and subsequent correction to EMF means that, today, the periodic measurement campaigns of module samples, contemplated in many of the technical quality assurance processes of photovoltaic plants , they are carried out mostly with solar simulators, which forces either to transfer the modules to a specialized laboratory and equipped with this equipment, or to move a portable solar simulator to the photovoltaic plant as described in WO 2014/083212 A1. In both cases, this way of measuring requires disassembling the modules from the location where they work normally, before taking them to the simulator, and reassembling them, once measured. And these manipulations are frankly inconvenient since, in addition to being costly in time and labor, they represent a significant risk to the
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physical integrity of the modules. More specifically, this manipulation is prone to generate cracks in the solar cells that, in turn, can lead to hot spots that affect the life of the modules.
The objective technical problem that arises is therefore to provide a method and means of measurement to characterize the electrical behavior in EMC of a photovoltaic module (or group of modules), from measurements in real sun, without the need to disassemble it from its original location and in such a way that the resulting uncertainty is as low as that corresponding to the measurements made in solar simulators.
Description of the invention
In order to provide a solution to the aforementioned problems, the following procedure and equivalent temperature estimation device in photovoltaic modules is presented.
The equivalent temperature estimation procedure in photovoltaic modules object of the present invention comprises the following phases:
- carry out, simultaneously, and under random measurement conditions, the following measurements:
or current intensity curve vs. voltage of a reference photovoltaic module, of which its current intensity curve is known vs. voltage under standard measurement conditions;
or current intensity curve vs. voltage of at least a first photovoltaic test module, from which its electrical characteristics are desired in standard measurement conditions;
or temperature of a certain zone of the reference photovoltaic module and of the at least one first test photovoltaic module;
- estimate the equivalent temperature of the reference photovoltaic module using the following expression:
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Teq, R = T¡q, R + - l) x / 1 [Equation 2]
where
TeqR is the equivalent temperature of the reference photovoltaic module under the aforementioned random measurement conditions;
TgqR is the equivalent temperature of the reference photovoltaic module under standard measurement conditions (typically 25 ° C);
V0 R is the open circuit voltage of the reference photovoltaic module obtained from the current vs. current curve. tension in the aforementioned random measurement conditions;
Vq R is the open circuit voltage of the reference photovoltaic module obtained from the current vs. current curve. voltage under standard measurement conditions; The V0 * R value of the reference photovoltaic module is known in advance and is not subject to calculation of the present invention.
/ it is a predetermined temperature coefficient of the reference photovoltaic module (typically associated with V0 * R); The P value of the reference photovoltaic module is known in advance and is not subject to calculation of the present invention.
Thus, deriving the module temperature from its open circuit voltage is a way to compensate for the temperature dispersion throughout the module itself and, therefore, results in less uncertainty than measuring the temperature directly at one point.
- estimate the equivalent temperature of the at least one first test photovoltaic module using the following expression:
Teq, c = Teq, R + (TZiC - TZiR) [Equation 3]
where
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TeqC is the equivalent temperature of the at least one first photovoltaic test module under the aforementioned random measurement conditions;
Tzc is the measured temperature of a given area of the at least one first photovoltaic test module;
Tzr is the measured temperature of a certain area of the reference photovoltaic module.
The difference in temperature between zones makes it possible to compensate for temperature dispersion throughout the generator, which results in minimizing uncertainty.
Preferably, the equivalent temperature estimation procedure in photovoltaic modules comprises using at least one infrared pointer temperature sensor to measure the temperature of a certain area of the reference photovoltaic module and at least one first photovoltaic module. test.
More preferably, the process of the invention comprises focusing, respectively, each of the aforementioned infrared pointers to the center of the rear face of each photovoltaic module.
In any case, preferably, the determined area of the reference photovoltaic module and the at least one first photovoltaic test module where the temperature measurement is performed is an area of said photovoltaic modules accessible and free of obstacles in a location of permanent work of said modules.
According to a possible embodiment, the process of the invention comprises associating an effective solar irradiance value with the estimated equivalent temperatures of the reference photovoltaic module and the at least one first photovoltaic test module.
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Said effective solar irradiance is calculated from the current vs. current curve. voltage, of the reference photovoltaic module, under the aforementioned random measurement conditions, and depending on the current intensity curve vs. voltage, of the reference photovoltaic module, under standard measurement conditions, by means of the following expression:
G = C * x ^ [Equation 4]
! sc, r
where
G is the effective solar irradiance to be associated with the estimated equivalent temperatures of the reference photovoltaic module and at least one first photovoltaic test module;
G * is the effective solar irradiance associated with the standard measurement conditions;
jsc, r is the short-circuit current intensity of the reference photovoltaic module obtained from the current vs. current curve. voltage under standard measurement conditions;
ISCR is the short-circuit current intensity of the reference photovoltaic module obtained from the current vs. current curve. voltage in the aforementioned random measurement conditions.
As already mentioned, the present invention also relates to an equivalent temperature estimation device in photovoltaic modules.
The equivalent temperature estimation device in photovoltaic modules object of the present invention includes:
- a first plotter of current curves vs. current. voltage, configured to measure the current vs. current curve. voltage of a reference photovoltaic module, under random measurement conditions;
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- at least a second current intensity vs. plotter. voltage, configured to measure the current vs. current curve. voltage of at least a first test photovoltaic module, under random measurement conditions;
- a first temperature measuring device, configured to measure a temperature in an area of the reference photovoltaic module;
- at least a second temperature measuring device, configured to measure a temperature in an area of the at least one first photovoltaic test module;
- means of synchronization of the plotters of currents of current intensity vs. tension, and;
- processing means configured to estimate the equivalent temperature of the reference photovoltaic module and of the at least one first test photovoltaic module under the aforementioned random measurement conditions.
Preferably, at least one of the temperature measuring devices is an infrared pointer temperature sensor.
According to a possible embodiment, the plotters of currents current intensity vs. Voltage are capacitive loads, optionally with the same load capacity with each other.
Also, the synchronization means may include a push button, configured to send a simultaneous trigger signal to the current intensity vs. curve recorder modules. tension.
According to a specific embodiment of the device of the invention, the processing means are configured to calculate an effective solar irradiance value associated with the estimated equivalent temperatures of the reference photovoltaic module and the at least one first photovoltaic test module.
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Additionally, according to a possible embodiment of the device, the processing means are configured to calculate the electrical characteristics of the at least one first photovoltaic test module under standard measurement conditions, from the curve obtained (under the aforementioned random conditions of measurement) of current vs. current voltage of said at least one first photovoltaic test module and from the estimated equivalent temperature (under the aforementioned random measurement conditions) of said at least one first photovoltaic test module.
Also, according to a possible embodiment, the processing means are configured to calculate the electrical characteristics of the at least one first photovoltaic test module under standard measurement conditions, based on the value of effective solar irradiance associated with the estimated equivalent temperature of the photovoltaic module. test.
Once the current vs. current curve is obtained. voltage in the random measurement conditions, and once the equivalent temperature of the at least one first photovoltaic test module is obtained under the random measurement conditions, the electrical characteristics of the at least one first photovoltaic test module can be obtained as prescribed in the standard IEC 60891
Alternatively, the electrical characteristics of the at least one first photovoltaic test module can be obtained starting from the [Equation 1] indicated above, but adding a correction factor that takes into account the described way of calculating the equivalent temperature of the photovoltaic module, such and as described by the following equation:
n * _
rM, C ~
PM, C
PM, R
xP
M, R
[l + Y X (req R- T * qR) [l + yx [Teq C- T * qCjj
[Equation 5]
where T * qR = T * qC, which is equal to the temperature under standard measurement conditions (typically 25 ° C), and where the gamma coefficient “y” is the coefficient of variation of the photovoltaic module's power with temperature , which is known in advance and is not subject to calculation of the present invention.
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Brief description of the figures
As part of the explanation of at least one preferred embodiment of the process and the equivalent temperature estimation device in photovoltaic modules, the following figure has been included, where the following is represented by way of illustration and not limitation.
Figure 1: Shows a set of photovoltaic modules arranged in the same plane, which constitute a photovoltaic generator, and with a simultaneous measurement device of the I-V curves of three modules and the temperatures of the center of its rear face.
Detailed description
The present invention relates, as already mentioned above, to a method and an equivalent temperature estimation device in photovoltaic modules.
Figure 1 shows a diagram of a photovoltaic generator consisting of multiple modules, including a reference photovoltaic module (1), whose characteristics under standard measurement conditions (EMC) are well known in advance and which will serve as a reference, and a first photovoltaic test module (2) and a second photovoltaic test module (3), whose characteristics in EMC are to be determined.
Previously, the operation of the generator is interrupted, so that no current flows through it, and the connections of the three photovoltaic modules (1, 2, 3) are opened, so that the respective poles (positive and negative of each module).
The measuring device (4) (represented only by a box in Figure 1) consists of three identical IV curve currents (current vs. voltage) (for example, capacitive loads with the same load capacity) that are connect to their respective modules, and three temperature sensors (for
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for example, infrared (IR) pointers each focused on the center of the rear face of each of the modules).
In general, there are as many curve plotters and as many temperature sensors as test photovoltaic modules plus one (for the reference photovoltaic module).
The measuring device (4) also includes a synchronization means (for example, a push button that sends a single trigger signal to the switches of the three capacitive loads) that allows simultaneously recording both the IV curves of the three photovoltaic modules (1 , 2, 3) as the temperatures observed in their respective centers of the back face.
Finally, the device (4) includes processing means (a microcontroller or similar device) in which the algorithm / estimation procedure is implemented with low uncertainty of the equivalent temperature of the photovoltaic modules (1,2, 3) to be measured .
The application of this algorithm is followed by the application of another algorithm (for example, the one described by [Equation 5], the one prescribed in IEC 60891 or any other one with the same purpose) to transfer the measured IV curves to EMC the photovoltaic test modules (2, 3), which is the context in which the temperature estimation algorithm object of the present invention shows its usefulness, minimizing the uncertainty associated with the translation.
The procedure as a whole includes the following steps:
- Determination of the effective irradiance on the reference photovoltaic module (1) from the value of the short-circuit current obtained from the V-I curve of this module. Assume that this irradiance is the same as that of the first test photovoltaic module (2) to be characterized. By way of example, the procedure for determining effective irradiance may be that described by [Equation 4].
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- Determination of the equivalent temperatures, TeqR, TeqC, of the reference photovoltaic module (1) and of the first photovoltaic test module (2). For it:
o The equivalent temperature, TeqR, of the reference photovoltaic module (1) is determined from the open circuit voltage, V0 R, obtained from the I-V curve of this module, for example, by [Equation 2].
o The equivalent temperature, TeqC, of the first test photovoltaic module (2) is determined assuming that the equivalent temperature results from correcting that of the reference photovoltaic module (1) with the difference between the temperatures observed in the centers of the rear faces of the reference photovoltaic module (1) and the first test photovoltaic module (2) according to [Equation 3].
- Correction of the I-V curve of the first photovoltaic test module (2) to EMC, following the requirements of IEC 60891 or any other similar procedure, taking as equivalent temperature the one calculated in the previous step.
- Extract the EMC characteristics of the first test photovoltaic module (2) (maximum power, short-circuit current and open circuit voltage) from the curve thus corrected. As an example, [Equation 5] allows you to perform this step and the previous one together.
- Repeat the procedure described in the previous points for the second photovoltaic test module (3).
权利要求:
Claims (12)
[1]
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1. Procedure for estimating equivalent temperature in photovoltaic modules characterized by comprising:
- carry out, simultaneously, and under random measurement conditions, the following measurements:
or current intensity curve vs. voltage of a reference photovoltaic module (1), of which its current intensity curve is known vs. voltage under standard measurement conditions;
or current intensity curve vs. voltage of at least a first test photovoltaic module (2), of which it is desired to obtain its electrical characteristics under standard measurement conditions;
or temperature of a certain zone of the reference photovoltaic module (1) and of the at least one first photovoltaic test module (2);
- estimate the equivalent temperature of the reference photovoltaic module (1) using the following expression:
Teq, R = T; q, R + i) x / r1
where
TeqR is the equivalent temperature of the reference photovoltaic module (1) under the aforementioned random measurement conditions;
TgqR is the equivalent temperature of the reference photovoltaic module (1) under standard measurement conditions;
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V0 R is the open circuit voltage of the reference photovoltaic module (1) obtained from the current vs. current curve. tension in the aforementioned random measurement conditions;
y0 * R is the open circuit voltage of the reference photovoltaic module (1) obtained from the current vs. current curve. voltage under standard measurement conditions;
/ it is a predetermined temperature coefficient of the reference photovoltaic module (1);
- estimate the equivalent temperature of the at least one first test photovoltaic module (2) using the following expression:
Teq, c = Teq tR + (Tzc - Tz, r)
where
TeqC is the equivalent temperature of at least a first test photovoltaic module (2) under the aforementioned random measurement conditions;
Tz¡c is the measured temperature of a given area of the at least one first test photovoltaic module (2);
Tzr is the measured temperature of a certain area of the reference photovoltaic module (1).
[2]
2. Procedure for estimating equivalent temperature in photovoltaic modules according to claim 1, characterized in that it comprises using at least one infrared pointer temperature sensor to perform temperature measurement of a certain area of the reference photovoltaic module (1) and of the at least a first test photovoltaic module (2).
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[3]
3. Equivalent temperature estimation procedure in modules
Photovoltaic according to claim 2, characterized in that, respectively, focusing each of the infrared pointers to the center of the rear face of each photovoltaic module.
[4]
4. Procedure for estimating equivalent temperature in modules
Photovoltaic according to any of the preceding claims, characterized in that the determined zone of the reference photovoltaic module (1) and of the at least one first photovoltaic test module (2) where the temperature measurement is performed is an area of said modules Accessible and obstacle-free photovoltaic in a permanent working location of said modules.
[5]
5. Equivalent temperature estimation procedure in modules
Photovoltaic according to any of the preceding claims, characterized in that it comprises associating an effective solar irradiance value with the estimated equivalent temperatures of the reference photovoltaic module (1) and the at least one first photovoltaic test module (2), wherein said solar irradiance Effective is calculated from the current vs. current curve. voltage, of the reference photovoltaic module (1), in the aforementioned random measurement conditions, and in function of the current vs. current curve. voltage, of the reference photovoltaic module (1), under standard measurement conditions, by means of the following expression:
G = G * x
hc, R
where
G is the effective solar irradiance to be associated with the estimated equivalent temperatures of the reference photovoltaic module (1) and the at least one first photovoltaic test module (2);
G * is the effective solar irradiance associated with the standard measurement conditions;
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¡SC'R is the short-circuit current intensity of the reference photovoltaic module (1) obtained from the current vs. current curve. voltage under standard measurement conditions;
ISCR is the short circuit current intensity of the reference photovoltaic module (1) obtained from the current vs. current curve. voltage in the aforementioned random measurement conditions.
[6]
6. Equivalent temperature estimation device (4) in modules
photovoltaic characterized by comprising:
- a first plotter of current curves vs. current. voltage, configured to measure the current vs. current curve. voltage of a reference photovoltaic module (1), under random measurement conditions;
- at least a second current intensity vs. plotter. voltage, configured to measure the current vs. current curve. voltage of at least a first test photovoltaic module (2), under random measurement conditions;
- a first temperature measuring device, configured to measure a temperature in an area of the reference photovoltaic module (1);
- at least a second temperature measuring device, configured to measure a temperature in an area of the at least one first photovoltaic test module (2);
- synchronization means of the current intensity curve vs. register modules. tension, and;
- processing means configured to estimate the equivalent temperature of the reference photovoltaic module (1) and of the at least one first photovoltaic test module (2) under the aforementioned random measurement conditions.
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[7]
7. An equivalent temperature estimation device in photovoltaic modules according to claim 5, characterized in that at least one of the temperature measurement modules is an infrared pointer temperature sensor.
[8]
8. Device for estimating equivalent temperature in photovoltaic modules according to any one of claims 5 or 6, characterized in that the current intensity vs. vs. intensity curve recorder modules. Voltage are capacitive loads.
[9]
9. Equivalent temperature estimation device in photovoltaic modules according to any of claims 5 to 7, characterized in that the synchronization means comprise a button, configured to send a simultaneous trigger signal to the current intensity vs. curve plotter equipment. tension.
[10]
10. Device for estimating equivalent temperature in photovoltaic modules according to any of claims 5 to 9, characterized in that the processing means are configured to calculate an effective solar irradiance value associated with the estimated equivalent temperatures of the reference photovoltaic module (1 ) and at least one first test photovoltaic module (2).
[11]
11. Device for estimating equivalent temperature in photovoltaic modules according to any of claims 5 to 10, characterized in that the processing means are configured to calculate the electrical characteristics of at least a first test photovoltaic module (2) under standard conditions of measured, from the current intensity curve vs. voltage of said first test photovoltaic module (2) under said randomized measurement conditions and from the estimated equivalent temperature of said at least one first photovoltaic test module (2) under said randomized measurement conditions.
[12]
12. Device for estimating equivalent temperature in photovoltaic modules according to claims 10 and 11, characterized in that the processing means are configured to calculate the electrical characteristics of the at least one first photovoltaic test module (2) under standard measurement conditions. , based on the effective solar irradiance value
associated to the estimated equivalent temperature of the test photovoltaic module (2).
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EP19733091.3A| EP3764540A1|2018-03-07|2019-03-06|Method and device for estimating equivalent temperature in photovoltaic modules|
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