专利摘要:
high power spray source. The present invention relates to a magnetron sputtering process, with which it is possible to pulverize material from a target surface in such a way that the pulverized material is present in a high percentage in the form of ions. according to the invention, this is achieved by means of a simple generator, the power of which, distributed in time intervals, is fed to several spray sources, i.e. a spray source is supplied with maximum power for a time interval and the next spray source is supplied at full power in the subsequent time interval. in this way, discharge current densities greater than 0.2a/cm2 are realized. during the off time, the spray target has the possibility to cool down, so that the temperature limit is not exceeded.
公开号:BR112013027022B1
申请号:R112013027022-5
申请日:2012-03-30
公开日:2021-09-08
发明作者:Kurt Ruhm;Siegfried Krassnitzer
申请人:Oerlikon Surface Solutions Ag, Pfäffikon;
IPC主号:
专利说明:

[001] The invention relates to a process for coating substrates by magnetron spraying.
[002] In the context of this description, "spray deposition" and "spray" are used interchangeably.
[003] In spraying, a target (cathode) is bombarded with ions, which leads to the fact that material is removed from the target. Acceleration of ions towards the target surface from a plasma is obtained by means of an electric field. In magnetron sputtering, a magnetic field is formed on the surface of the target. In this way, electrons in the plasma are forced onto a spiral path and circulate over the surface of the target. By the extended path, the number of electron collisions with atoms or ions considerably increases, which leads to a higher ionization in this region on the surface of the target. In this way, a higher spray removal occurs on the target immediately below the region. It leads to erosion ditches with the circulation path (racetrack) arranged on top. This erosion trench has the disadvantage that large regions of the target are not substantially removed. But often the target material is an expensive material. Therefore, sometimes the magnetic system that forms the magnetic field behind the target is configured in such a way that this leads to a kidney-shaped circulation path, as depicted in Figure 1. In the case of a round cathode, the The magnetic system is rotated around the central axis of the round cathode, so that substantially uniform removal of target material takes place. But, the disadvantage of conventional spraying remains that the material removed is only ionized to a very small percentage.
[004] The present invention relates, in particular, to a HIPIMS process (HIPIMS = High Power Impulse Magnetron Sputtering, or sputtering with high power impulse magnetron). HIPIMS is an improved process from conventional spraying, utilizing the effect of pulsed discharges, with a duration and pulse in the range of microseconds to milliseconds, with power densities greater than 100W/cm2. The HIPIMS spring technology eliminates the major disadvantage of conventional sputtering, namely the very little ionization of the sputtered atoms. Thus, from the prior art it was shown that by means of the HIPIMS technique, depending on the material, an ionization of up to 100% of the pulverized particles can be obtained. In this case, the large discharge current density, which acts at least briefly on the target, leads to the highest degree of ionization. The higher degree of ionization can modify the growth mechanism of the layers and therefore has an influence on the properties of the layers. Among other things, this leads to higher tack strength.
[005] Typically, average power densities used, both in conventional spraying and also in HIPIMS, are in the range of 20 W/cm2. In case of high loads, it reaches up to 50 W/cm2, under the use of special target cooling devices. The corresponding discharge current densities are then in the range of up to 0.2a/cm2. From the standpoint of plasma physics and electrotechnics, however, much higher power densities and, with them, discharge current densities, would not pose a problem. But substantially the average power that can be used over a spray target is limited by the fact that there are technical limits to cooling the target. For this reason, in the HIPIMS process, spraying power is applied in a pulsed manner, and the pulse duration is selected in such a short way that, due to the average power acting on the target, an excessive temperature is not formed. In that case, it is evident that the target temperature and the maximum allowable target temperature strongly depend on the target material and its thermal conductivity and its mechanical properties.
[006] Disadvantage in this case is that pulse technology leads to considerable complexity in apparatus, since generators need to be used, which are able to divide the power temporally and spatially into pulses of spraying power. This is not achieved with conventional generator technology.
[007] To circumvent this disadvantage, it is proposed in the prior art to move to a clearly reduced circulation path compared to the total size of the target and let this circulation path move over the target surface. For example, in US 6,413,382 to Wang et al. A magnetic system is proposed, which leads to a magnetron that covers less than 20% of the target's surface. The magnetic system is rotatably mounted behind the surface of the target so that the circulation path can magnetize substantially the entire surface of the target. In fact, this proposal simplifies generators, but nevertheless, pulse technology cannot be completely dispensed with. Correspondingly, a pulse/pause ratio of less than 10% is indicated.
[008] However, in this case it is disadvantageous that a correspondingly designed apparatus is exclusively suitable for HIPIMS applications. Due to the greatly reduced size of the circulation path, the amount of spraying is correspondingly small. If it is desired to alternate between HIPIMS layers and conventional spray layers, then also the amount of conventional spray for these layers is reduced.
[009] A similar proposal is sought by Nyberg et al. In WO 0300703A1. They describe that a higher discharge current density is achieved by a reduced spray region. To compensate for higher local heating, the spray region is moved. Nyberg et al. further describe that in an industrial application, the reduced spray region needs to be moved at high speed over the target to prevent surface melting. This technique allows you to use any conventional generator. One possibility is seen in the division of a target into several parts, which are electrically separated from each other. Henceforth, these parts are called partial targets. A partial target must, in this case, be a completely independent target, which is isolated, particularly with regard to the request with power, from other partial targets, with the surfaces of several identical partial targets adding up to the total surface of the target. Since all the power is concentrated on one of these partial targets at one point, it is therefore possible to control the location from which the spraying is currently being carried out. By connecting and disconnecting the parts, it is possible to do without moving components.
[0010] A disadvantage of disposition and Nyberg et al. It is because this structure cannot be operated in conventional magnetron sputtering mode, as it is not possible or technically very complex to distribute the power of a generator evenly over the various parts. It is also particularly disadvantageous in the proposal by Nybedg et al. that on each of the partial targets to be connected or disconnected there is a fixed erosion trench. This means that the targeting is markedly worse than compared to the rotating magnetron described by Wang et al.
[0011] It would therefore be desirable to have an apparatus available that allows to carry out a HIPIMS process, without complex pulse generator technology, but to be able to switch in a simple way to a conventional spraying mode.
[0012] According to the invention, this task is solved by the fact that a target is divided into several independent, electrically isolated partial targets, which are powered by a power supply unit, which in HIPIMS mode is configured as a unit of master-slave. By configuration and master-slave is meant the connection of the outputs of two or more generators, with the power to be adjusted in one of the generators (the master) is selected and the other generators are electronically connected in such a way that they accompany the master in your settings. Preferably, at least as many generators as the individual electrically isolated partial targets are connected to each other in master-slave configuration. Power is transmitted to partial targets in hi mode for as long as their refrigeration allows. In HIPIMS mode, partial targets are connected and disconnected successively. The power supply unit in master-slave configuration, therefore, never needs to present the full power on all partial targets simultaneously. In this way, a cheaper generator can be used. When conventional spraying has to be carried out, then the master-slave configuration is undone and for each partial target its own generator is available. A partial target can then be operated with a generator as an independent spray source. If, after dissolving the master-slave configuration, there are not as many generators available as there are sub-targets, some sub-targets may remain permanently disconnected or alternately disconnected. In this way, it is obtained that switching from HIPIMS mode to conventional spray mode can be done in a simple way.
[0013] Preferably, behind the partial targets are, in each case, mobile magnetic systems, which ensure that the respective circulation path moves over the respective partial target. If the installation is operated in HIPIMS mode, the magnetic systems behind the partial targets, preferably rotating, move according to the invention with a frequency, which preferably has no relationship with the frequency of the recurring power pulse rational. In this way it is ensured that material is removed evenly from the target surface.
[0014] The invention is now explained more precisely in detail and exemplified by means of the figures.
[0015] Figure 1 shows the surface of a target, along with the circulation path that is moving, as used in conventional spraying in the prior art.
[0016] Figure 2 shows a first modality of the present invention with partial targets, which, in each case, present a mobile magnetic system, and the power supply unit consists of several generators, which are connected in master-slave configuration .
[0017] Figure 3 shows a first modality of the present invention with electrically isolated partial targets, which, in each case, have a mobile magnetic system, and the power supply unit consists of several generators, which are not connected in configuration of master-slave, so that each partial target is associated with a generator and with it can be operated as an independent spray source.
[0018] Figure 4 shows the simulated cooling behavior of various target materials, after an action for 50 ms of a power pulse.
[0019] Figure 5 shows spectroscopic measurements in an arc-flash discharge as compared to these measurements in the plasma discharge according to the invention.
[0020] Figure 6 shows spectroscopic measurements at the discharge of a DC spray plasma, in comparison with those measurements at the plasma discharge according to the invention.
[0021] According to a first embodiment of the present invention, as shown schematically in Figure 2, a power supply unit 3 supplies through switch S1 voltage and current to the spray source q1 arranged in a vacuum chamber 4, to spray device operation in HIPIMS mode. The power supply unit 3 is formed by several generators g1 to g6, which are connected in master-slave configuration. As a DC generator, it can be conceived as a pulsed DC generator. The spray source a1 is formed as a magnetron spray source with partial target, whereby, according to a preferred variant of this modality, a mobile, mounted, magnetic system ms1 is provided via the partial target of the spray source a1 preferably in a rotary mode. In the use, by movement, preferably rotation, of the ms1 magnetic system, the circulation path is moved over almost the entire surface of the target surface of the spray source q1.
Noble gas and/or reactive gas, such as, for example, N2, O2, C2H4, C2H2, among other reasons, are fed to the vacuum chamber 4 in order to be able to hold the plasma for the spray discharge. The power supply unit 3 provides a spray power which, when continuously present at q1, is above the thermal limit of the spray source q1. But, the spraying power is suitable for generating a magnetron discharge, at which the current density with respect to the magnetron's circulation path surface is greater than 0.2A/cm2.
[0023] Via switches S2 to 6 voltage and current can also be applied to spray sources q2 to q6 arranged in vacuum chamber 4. These spray sources are substantially the same in construction as spray source q1.
[0024] In total, the average power over an individual spray source cannot exceed the value of by the thermal limit. To achieve this, after a certain time, one spray source is successively switched off and the next one is switched on, which leads to pulse sequences. When all spray sources have been in operation, then the first spray source can be turned back on and the cycle can be started again, which takes periodic operation. Any pulse sequences, which allow the observation of the maximum average power on the target, are possible.
[0025] Mobile magnetic systems, preferably rotating behind the spray sources, move with a frequency that preferably applied with the frequency of the recurrent power pulse to a spray source, does not form any rational relationship with this ensures that material is evenly removed from the target surface.
[0026] When you want to migrate to conventional spraying, then the master-slave configuration is undone. Each spray source is then associated with at least one generator. The corresponding configuration is shown in Figure 3. If there are more generators than spray sources, then the more generators can be attached as a slave to generators already associated with spray sources.
[0027] If there are fewer generators than spray sources, then the additional spray sources can be left inactive or the various spray sources are successively and periodically applied a power break, so that for this time of the power break, they release a generator.
[0028] In the concrete example, in a master-slave configuration, for example, 2DC AE Pinacle generators with, in each case, 20 kW, were connected. Therefore, 40 kW were available as maximum spray power. A round magnetron of the type as shown in Figure 1, with a target diameter of 150 mm. A time-adjustable pulse of 40 kW of spray power was connected to the target. For a target of this size the thermal limit is reached when it is called, on average with about 5kW. A calculation of the temporal evolution of the surface temperature depending on the target material is shown in Figure 4. For a pulse power of 40 kW, using the above mentioned magnetron, a power density of 600 W/cm2 should be expected. with respect to the surface of the circulation path. At a discharge voltage of 600 V, a current density of 1.67 A/cm2 is therefore achieved. As the finite element simulation in Figure 4 shows, at a spray power density of 1000 W/cm2 and a pulse duration of 50 ms, a temperature rise of around only approximately 50°C to 100 should be expected. °C for copper or aluminium, as well as around 350°C for titanium. A surface melting and surface evaporation, as is often mentioned, can be excluded, as is concluded from the simulation.
[0029] After the pulse duration of 50 ms, all the power is fed to another round magnetron of the same construction. In the construction according to the present example, the vacuum chamber 6 comprises round magnetrons of equal construction, which in each case are connected successively. After a time delay of 300 ms, the first round magnetron is turned on again. Round magnetrons can be arranged in a circular shape around a turntable on which the substrates to be coated are mounted. The connection of the individual magnetrons can take place in a sequence, in the opposite direction to the direction of rotation of the turntable, with which a faster rotation of the turntable is simulated.
[0030] The magnetic system behind the target surface rotates with a frequency of 180 U/min. This means that at a pulse repetition that occurs every 300 ms, the two frequencies do not form any rational relationship.
[0031] With the configuration according to the invention, a strong increase in the discharge current is obtained within a short time, for example 500 μs, which remains at a stable level throughout the duration of the pulse. Disadvantageous transient procedures, such as typically occur in HIPIMS processes, due to high frequency pulsation are avoided with the process according to the invention. This is because in the process according to the invention the pulse duration is several milliseconds and the transient procedures are negligible.
[0032] According to a second example of the process according to the invention, a pulse power of 40 kW and a pulse duration of 10 ms were applied to the system described above, at a repetition frequency of 10 Hz. 4 kW average power per round magnetron. Here, 10 round magnetrons can be mounted in the vacuum chamber, all of which can be fed with the master-slave configuration mentioned above. The discharge plasma was evaluated spectroscopically and compared with the plasma from an arc-flash evaporation. In the example, the target was a titanium target. Figure 5 shows the two spectra in comparison, and they, in each case, are standardized for their intensity of the Ti(0) line at 365.35 nm. The two discharges show strong optical emissions for Ti+at 336.12 nm, 368.52 nm and unresolved double line at 375.93 nm and 376.132 nm. This allows the conclusion that the spraying process according to the invention leads to a high ionization of the material removed from the target, comparable to arc-flash evaporation.
[0033] According to a third example, a titanium-aluminium with a ratio of 50at% Ti and 50%at Al was used as target material. To compare the process according to the invention with the spray technique The conventional plasma, the conventional spray coating and the plasma of the process according to the invention were entered spectroscopically and compared to each other. For the conventional spray coating the configuration as shown in Figure 3 was used. As, however, for the experiment only 2 DC generators were available, in each case a spray source was fed with a generator, i.e. two spray sources were simultaneously powered and, after a predetermined time interval, the powers were successively guided to two other spray sources. The corresponding comparison is shown in Figure 6. In both cases, the average spray power amounted to 4 kW. The spectra were standardized for the Al(0) lines at 394.4 nm and 396.15 nm. It is noteworthy that in the case of conventional DC discharge, the lines for ions such as Al+ at 390.07 nm, Ti+ at the double line 375.93 nm and 376.132, as well as at 368.52 nm and 336.12 nm are substantially absent. This also makes it possible to conclude that in the process according to the invention a high degree of ionization of the material removed from the target is present.
[0034] According to another embodiment of the present invention, the process is configured as a double magnetron process. In that case, the spray power, during a pulse lasting several microseconds, alternates between at least two spray magnetrons, with a switching frequency of typically between 2060 kHz, in each case alternately on the target surface becomes cathode or anode. In order not to exceed the thermal load of the target, the power applied to the magnetron pairs is, in each case, limited in time, by the fact that after the pulse, the switch is made to another pair of magnetrons.
[0035] All examples were described using round cathodes. But for the technician it is directly evident that the same inventive concept can be simply transferred to rectangular cathodes. A special advantage of the present invention resides in the fact that a simple DC generator can be used, whose total power of, for example, 40 kW can be introduced into the coating chamber. Due to the connection according to the invention of the generator with the individual spray sources, a degree of ionization can be obtained which in the context of a spraying process can typically only be obtained with highly complex pulse generators. In preferred embodiments of the present invention, in each case, there is provided, in each case, behind the spraying targets a system with a driven magnetic field, which ensures a movement of the flow path over the target.
[0036] The process according to the invention and the apparatus allow in a simple way to change the spraying according to the invention, which leads to a high concentration of ions, to the conventional spraying, with a lower concentration of ions.
[0037] Within the scope of the present description, a process for generating a plasma discharge with a discharge current density, which at least in some regions is locally greater than 0.1A/cm2, with the steps:- put available a power supply unit with a predetermined maximum power; - make available at least two magnetron spray sources with, in each case, a predetermined circulation path and predetermined thermal limit, the circulation path being designed of such a small mode that at the maximum power action of the power supply unit on, in each case, one of the magnetron spray sources, the discharge current density is greater than 0.1A/cm2;- through the unit power supply, supplying a first power to a first of the at least two magnetron spray sources for a first time interval, the first power being selected. set sufficiently large that the magnetron spray source results in at least one region, locally, a discharge current density greater than 0.2A/cm2e with the first time interval selected sufficiently small of so that the thermal limit of the first magnetron spray source is not exceeded; - by means of the power supply unit, supplying a second power to a second of the magnetron spray sources for a second time interval, whereby the second power is selected large enough that the magnetron spray source results in at least one region, locally, a discharge current density greater than 0.2A/cm2e with the second time interval selected so small enough so that the thermal limit of the second magnetron spray source is not exceeded; the power supply unit comprising at least two generators, which are connected to each other in master-slave configuration, and the two time slots do not completely overlap.
[0038] A third and preferably other magnetron spray sources can be made available, in each case, with predetermined circulation path and, in each case, predetermined thermal limit, with the circulation paths being designed from such that at the maximum power action of the power supply unit on, in each case, one of the magnetron spray sources, the discharge current density is greater than 0.2A/cm2 and the power supply unit comprises at least fewer slave generators than the number of slave generators and the master generator lead to a number of generators which is equal to or greater than the number of magnetron spray sources.
[0039] The time intervals can be composed of periodically recurring intervals and, therefore, form periodic pulses.
[0040] Behind at least one of the targets of the magnetron sputtering sources, a mobile magnetic system, preferably rotating, can be provided, which leads to a mobile circulation path, the extent of which is clearly smaller than the surface of the target, but greater than 20% of the target surface.
[0041] A magnetron spraying installation with two or more magnetron spraying sources and a power supply unit has been described, the power supply unit comprising a number of generators corresponding at least to the number of sources of spraying and magnetron and means are provided which, on the one hand, allow to configure the generators existing in the power supply unit for a master and at least one slave and to provide a connection with which the power of the configured power supply unit of that mode can be applied successively on the magnetron spray sources, and the means, on the other hand, allow to configure the power supply unit as number of isolated generators and with the connection, the power of, in each case, at least one generator, can be brought in each case to a magnetron spray source.
权利要求:
Claims (5)
[0001]
1. Process for producing a plasma discharge with a discharge current density, which, at least in some areas, is locally greater than 0.2A/cm2, with the steps, - providing a power supply unit ( 3) with a predetermined maximum power, - provide at least two magnetron spray sources (q1 - q6) with a circulation path, in each case predetermined and predetermined thermal limit, with the circulation path configured in such a small way that in the actuation of the maximum power of the power supply unit (3) on, in each case, one of the magnetron spray sources (q1 - q6), the discharge current density is greater than 0.2A/cm2; - by means of the power supply unit (3), supplying a first power to a first of the at least two magnetron spray sources (q1 - q6) for a first time interval, the first power being selected from one size only sufficient, so that the magnetron spray source (q1 - q6) results, at least in one region, locally, a discharge current density greater than 0.2A/cm2 with the first time interval selected from sufficiently small size so that the predetermined thermal limit of the first magnetron spray source (q1 - q6) is not exceeded; - by means of the power supply unit (3) supplying a second power to a second of the sources of magnetron sputtering (q1 - q6) for a second time interval, the second power being selected of a sufficient size so that in the second magnetron sputtering source (q1 - q6) at least one area results , locally, a discharge current density greater than 0.2A/cm2e with the second time interval selected sufficiently small so that the thermal limit of the second magnetron spray source (q1 - q6 ) is not exceeded; the two time intervals do not completely overlap, characterized by the fact that the power supply unit (3) comprises at least two generators (g1 - g6) that are connected to each other in a configuration of master-slave.
[0002]
2. Process according to claim 1, characterized in that a third and preferably other magnetron spray sources (q1 - q6) are made available, in each case, with a predetermined circulation path and, in each case, with predetermined thermal limit, and the circulation paths are configured in such a way that when the maximum power of the power supply unit (3) acts on, in each case, one of the magnetron spray sources (q1 - q6), the discharge current density is greater than 0.2A/cm2 and the power supply unit (3) has at least such a number of slave generators (g1 - g6) as the number of generators (g1 - g6 ) slave and master generator leads to a number of generators (g1 - g6) which is equal to or greater than the number of magnetron spray sources (q1 - q6).
[0003]
3. Process according to claim 1 or 2, characterized in that the time intervals are composed of periodically recurring intervals and, therefore, form periodic pulses.
[0004]
4. Process according to any one of claims 1 to 3, characterized in that behind at least one target of the magnetron sputtering sources (q1 - q6) a mobile, preferably rotating magnetic system is provided, which leads to a moved circulation path whose length is markedly less than the target surface but greater than 20% of the target surface.
[0005]
5. Magnetron spray installation with two or more magnetron spray sources (q1 - q6) and a power supply unit (3), characterized in that the power supply unit (3) comprises a number of generators (g1 - g6), which corresponds at least to the number of magnetron spray sources (q1-q6) and means are provided that, on the one hand, allow the configuration of the generators (g1 -g6) on the power supply unit (3) with a master and at least one slave and a switch (S1 - S6) is provided with which the power of the power supply unit (3) configured in this way can be applied successively to the magnetron spray sources ( q1 - q6) and the means, on the other hand, allow to configure the power supply unit (3) as the number of generators (g1 - g6) isolated and with the switch, the power of, in each case, a generator, can be taken to, in each case, a source of powder. magnetronization.
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引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题

RU1828142C|1991-01-31|1995-06-27|Научно-исследовательский институт энергетического машиностроени МГТУ им.Н.Э.Баумана|Method and apparatus for applying complex-composition vacuum coatings|
DE19651615C1|1996-12-12|1997-07-10|Fraunhofer Ges Forschung|Sputter coating to produce carbon layer for e.g. magnetic heads|
US6183614B1|1999-02-12|2001-02-06|Applied Materials, Inc.|Rotating sputter magnetron assembly|
US6413382B1|2000-11-03|2002-07-02|Applied Materials, Inc.|Pulsed sputtering with a small rotating magnetron|
SE521095C2|2001-06-08|2003-09-30|Cardinal Cg Co|Reactive sputtering process|
JP4393158B2|2003-11-11|2010-01-06|新電元工業株式会社|Power supply for sputtering|
EP1580298A1|2004-03-22|2005-09-28|Materia Nova A.S.B.L|Process and apparatus for pulsed magnetron sputtering|
UA77692C2|2004-04-19|2007-01-15|Taras Shevchenko Kyiv Nat Univ|Magnetron spraying mechanism|
EP1943370B1|2005-11-01|2019-08-21|Cardinal CG Company|Reactive sputter deposition processes and equipment|
DE102006017382A1|2005-11-14|2007-05-16|Itg Induktionsanlagen Gmbh|Method and device for coating and / or treating surfaces|
JP4648166B2|2005-11-24|2011-03-09|新電元工業株式会社|System power supply and power supply system|
US20080197015A1|2007-02-16|2008-08-21|Terry Bluck|Multiple-magnetron sputtering source with plasma confinement|
DE102008021912C5|2008-05-01|2018-01-11|Cemecon Ag|coating process|
RU2371514C1|2008-08-20|2009-10-27|Государственное образовательное учреждение высшего профессионального образования "Томский политехнический университет"|Dual magnetron spray-type system|
JP2010065240A|2008-09-08|2010-03-25|Kobe Steel Ltd|Sputtering apparatus|
DE202010001497U1|2010-01-29|2010-04-22|Hauzer Techno-Coating B.V.|Coating device with a HIPIMS power source|US9267200B2|2011-04-20|2016-02-23|Oerlikon Surface Solutions Ag, Trubbach|Method for supplying sequential power impulses|
DE102011116576A1|2011-10-21|2013-04-25|Oerlikon Trading Ag, Trübbach|Drill with coating|
DE102011117177A1|2011-10-28|2013-05-02|Oerlikon Trading Ag, Trübbach|Method for providing sequential power pulses|
DE102011121770A1|2011-12-21|2013-06-27|Oerlikon Trading Ag, Trübbach|Homogeneous HIPIMS coating process|
WO2014105819A1|2012-12-28|2014-07-03|Sputtering Components, Inc.|Plasma enhanced chemical vapor depositionsource|
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WO2015000581A1†|2013-07-03|2015-01-08|Oerlikon Trading Ag, Trübbach|Tixsi1-xn layers and the production thereof|
DE102013011072A1|2013-07-03|2015-01-08|Oerlikon Trading Ag, Trübbach|target preparation|
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GEP201606512B|2015-05-28|2016-07-11|Planar magnetron sputter|
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RU2619460C1|2015-11-25|2017-05-16|Федеральное государственное бюджетное учреждение науки Институт электрофизики Уральского отделения Российской академии наук |Method of ion-beam processing of products with a large surface area|
RU2657275C2|2016-11-17|2018-06-09|Государственное бюджетное образовательное учреждение высшего образования Московской области "Университет "Дубна" |Method of producing films of cadmium telluride by magnetron sputtering at a constant current|
法律状态:
2018-12-18| B06F| Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]|
2019-10-29| B06U| Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]|
2021-06-15| B09A| Decision: intention to grant [chapter 9.1 patent gazette]|
2021-08-10| B25D| Requested change of name of applicant approved|Owner name: OERLIKON SURFACE SOLUTIONS AG, PFAEFFIKON (CH) |
2021-08-17| B25G| Requested change of headquarter approved|Owner name: OERLIKON SURFACE SOLUTIONS AG, PFAEFFIKON (CH) |
2021-09-08| B16A| Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 30/03/2012, OBSERVADAS AS CONDICOES LEGAIS. |
2021-10-05| B25L| Entry of change of name and/or headquarter and transfer of application, patent and certificate of addition of invention: publication cancelled|Owner name: OERLIKON TRADING AG, TRUEBBACH (CH) Free format text: ANULADA A PUBLICACAO CODIGO 25.4 NA RPI NO 2640 DE 10/08/2021 POR TER SIDO INDEVIDA. |
2021-10-19| B25L| Entry of change of name and/or headquarter and transfer of application, patent and certificate of addition of invention: publication cancelled|Owner name: OERLIKON TRADING AG, TRUEBBACH (CH) Free format text: ANULADA A PUBLICACAO CODIGO 25.7 NA RPI NO 2641 DE 17/08/2021 POR TER SIDO INDEVIDA. |
2021-11-03| B25D| Requested change of name of applicant approved|Owner name: OERLIKON SURFACE SOLUTIONS AG, TRUEBBACH (CH) |
2021-11-16| B25D| Requested change of name of applicant approved|Owner name: OERLIKON SURFACE SOLUTIONS AG, PFAEFFIKON (CH) |
2021-11-30| B25G| Requested change of headquarter approved|Owner name: OERLIKON SURFACE SOLUTIONS AG, PFAEFFIKON (CH) |
优先权:
申请号 | 申请日 | 专利标题
DE102011018363.9|2011-04-20|
DE102011018363A|DE102011018363A1|2011-04-20|2011-04-20|Hochleistungszerstäubungsquelle|
PCT/EP2012/001414|WO2012143087A1|2011-04-20|2012-03-30|High-power sputtering source|
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