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    • 专利摘要:
    light-emitting device and manufacturing method for the light-emitting device. the present invention relates to a light-emitting device (100) which includes: a substrate (1); the metal film (30) in the mounting region (1a) on the substrate (1); a light-emitting part (20) including a plurality of light-emitting elements (2) arranged on the metal film (30); metal members (40) formed on the substrate (1), respectively including the cushion parts (3a, 4a) and the wiring parts (3b, 4b), forming a positive electrode (3) and a negative electrode (4) configured to apply a voltage to the light-emitting element (2) through the wiring parts (3b, 4b), respectively; and a galvanizing wire connected to the metal film (30), extended to a side face of the substrate (1). the metal film (30) and the metal member (40) are independently arranged. the wiring part (3b) of the positive electrode (3) and the wiring part (4b) of the negative electrode (4) are formed in a circumference of the mounting region (1a). the metal members (40) are formed away from the circumferential edge of the substrate (1) on the side of the mounting region (1a) of the substrate (1).
    公开号:BR112012026371B1
    申请号:R112012026371-4
    申请日:2011-04-01
    公开日:2020-12-15
    发明作者:Haruaki Sasano
    申请人:Nichia Corporation；
    IPC主号:
    专利说明:

    TECHNICAL FIELD
    [0001] The present invention relates to a light emitting device usable as a lighting adjustment such as an LED lighting lamp, a display device, lighting equipment, a display and a backlight light source for a liquid crystal display, etc. and a method for producing the same. BACKGROUND TECHNIQUE
    [0002] Recently, several electronic parts have been proposed and used in practice. Thus, the desired performances of these electronic components have become high. This is also true for light-emitting devices, represented by a light-emitting diode (LED: Light-Emitting Diode) and the necessary performances in a general lighting industry field and a vehicle lighting field, etc. become tall every day. Thus, even higher output energy (higher brightness) and higher reliability are required. In addition, light-emitting devices with these characteristics are also required to be supplied at low costs.
    [0003] There is a known light-emitting device from which the light output effectiveness is enhanced (see, for example, Patent Document1). For example, Au plating and Ag plating are formed in different regions on an insulating member and Au plating, which has good contact with an Au wire, is used as an electrode surface and a plating of Ag, which has a high reflectivity, is used as a reflecting surface.
    [0004] As described above, in the case where galvanizing of different materials is formed, two types of conductive layers for Au galvanizing and Ag galvanizing are independently formed as conductive layers for electroplating in regions where galvanizing is to be formed. Only one of the conductive layers is electrified so that the respective conductive layers easily form galvanizing of different materials in different regions. The conductive layers for electroplating are exposed in such a way that electrification with a galvanizing device can easily be done, for example, on a side face or a rear face of the insulating member. PREVIOUS TECHNICAL DOCUMENT PATENT DOCUMENT
    [0005] Patent Document 1: JP 2004-319939A (see Figures 1 and 3) DISCLOSURE OF THE INVENTION PROBLEMS TO BE SOLVED BY INVENTION
    [0006] However, in the prior art, there are the problems described below.
    [0007] Recently, even higher output energy has become necessary for the light-emitting device. It is important to suppress a temperature rise in the light-emitting device to provide a high energy output by inserting a larger current. For example, the light-emitting device is placed in a metal body that has a high heat dissipation. With respect to the prior art light-emitting device described above, a plurality of light-emitting devices are installed on a mounting substrate and the mounting substrate is further installed on a metal body.
    [0008] However, due to the fact that the prior art light-emitting device uses Ag electroplating that has a high reflectivity on a reflection surface, a light output effectiveness may be enhanced, but due to the fact that a conductive layer is exposed to a side face or a rear face of the insulating member, it is impossible to locate the side face and the back face close to the metal body. In a case where the conductive layer is exposed only on the side of the insulating member, when the light emitting device is activated at the same time that the back of the insulating member is in contact with the metal body, a short -circuit occurs due to surface discharge.
    [0009] The invention was developed in consideration of the problems described above and aims to provide a light emitting device capable of increasing the light output of the light emitting device and being directly installed in a metal body and a method for producing the emitting device of light. MEASURES TO SOLVE THE PROBLEMS
    [00010] In order to solve the problems, the light emitting device according to the present invention, comprises: a substrate; a metal film in a substrate mounting region; a light-emitting part which includes a plurality of light-emitting elements arranged on the metal film; metal members formed on the substrate, respectively including pad parts and wiring parts, which form positive and negative electrodes configured to apply a voltage to the light-emitting element through the pad parts and the wiring parts, respectively; and a galvanizing wire connected to the metal film and extended to a side face of the substrate, on which the metal film and metal members are independently arranged; and where the positive electrode wiring part and the negative electrode wiring part are formed at the periphery of the mounting region, and the meral members are formed away from a circumferential edge of the substrate on one side of the mounting region of the substrate.
    [00011] According to this configuration, due to the fact that the metal film is formed in a region where the light-emitting elements are installed, a light output effectiveness (reflective effectiveness) can be accentuated. In addition, the metal film and the metal member (electrode layers) are independently formed respectively and the metal member is formed away from a side face and a back face of the substrate. In this way, a short circuit due to the surface discharge at the moment the light emitting device is activated can be prevented.
    [00012] It is preferable that the galvanizing wire is formed inside the substrate and connected to the metal film through a through hole formed in the substrate.
    [00013] According to the configuration, there is no limit on the arrangement of the metal member, so that the galvanizing wire can be extended to a side face of the substrate without any limitation on the arrangement of the metal member. According to this configuration, due to the fact that the galvanizing wire is not disposed on an upper surface of the substrate, there is no limitation in the design of the light emitting device. In addition, when the galvanizing wire, which has a higher heat conductivity than the substrate on which an insulating member is located, is disposed within the substrate, a heat dissipation can be accentuated.
    [00014] In addition, it is preferable that a part of the galvanizing wire within the substrate is exposed from the side face of the substrate.
    [00015] According to this configuration, the heat dissipation can be even more accentuated.
    [00016] The substrate is formed in a predetermined shape that has a pair of facing sides and another pair of facing sides, in which the positive electrode pad and the negative electrode pad are formed along a pair of facing sides. The galvanizing wire is extended to another pair of the confronting sides. In addition, in plan view, it is preferable that the positive electrode pad and the negative electrode pad do not overlap the galvanizing wires.
    [00017] According to this configuration, the voltage is not discharged to the cushion part through the galvanizing wire as a relay point, so that the short circuit due to this discharge can be prevented.
    [00018] Furthermore, it is preferable that the metal film has a reflectivity with respect to the light emitted by the light-emitting element greater than the metal member and that Ag is used for the metal film and Au is used for the metal member metal.
    [00019] According to this configuration, due to the fact that the metal film has a higher reflectivity than the metal members, then the light output effectiveness can be enhanced. In particular, a light output effectiveness can be further enhanced by the use of Ag, which has a high reflectivity, for the metal film and with the use of Au for the metal member.
    [00020] It is preferred that in the light-emitting device, a light-reflecting resin is formed along a circumferential edge of the mounting region to cover at least the spinning part and a sealing member, which has a translucency, is filled inside the light reflecting resin to cover the light emitting element and the metal film.
    [00021] According to the configuration, the light reflecting resin is formed to surround the mounting region, so that the light towards a circumference of the substrate mounting region is reflected by the light reflecting resin. In this way, a loss in the emitted light can be reduced, so that the light output effectiveness of the light emitting device can be enhanced. In addition, due to the fact that the sealing member is filled within the light reflective resin, then the parts within the light reflective resin are protected.
    [00022] A method for producing the light emitting device according to the present invention comprises: a substrate production process for producing a substrate in which a galvanizing wire is formed; a coating process comprising: forming a metal member that provides positive and negative electrodes on the substrate on which the galvanizing wire is formed by non-electrical galvanizing and forming a metal film by electrogalvanizing in a region of mounting on the substrate; a mold bonding process for installing a light-emitting element on the metal film; a wire bonding process for electrically connecting the positive electrode and the negative electrode to the electrode terminals of the light-emitting element with wires after the mold bonding process.
    [00023] According to the method for producing the light-emitting device, in the galvanizing process, the metal member can be disposed in a location away from the side face and the back face of the substrate by non-electroplating and the metal film it is arranged in the region of assembly of the light-emitting elements by electroplating. This configuration provides a light-emitting device in which short-circuiting due to gradual discharge is prevented at the time when the light-emitting device is being operated and a light output effectiveness is enhanced.
    [00024] The galvanizing process comprises: forming metal members to supply the positive electrode and the negative electrode by non-electroplating as well as in the assembly region, and then forming a metal film on the metal member in the electroplating assembly region. .
    [00025] According to the method for producing the light-emitting device, after forming the metal member by non-electrical galvanizing, the metal film is formed on the metal member in the assembly region, so that there is no need to use a mask, etc. and a flatness of the metal film is accentuated.
    [00026] The method for producing the light emitting device according to the present invention, after the wire bonding process, a light reflective resin forming process is included to form the light reflective resin to cover at least the wiring parts of the positive and negative electrodes together with a circumferential edge of the mounting region.
    [00027] In addition, a sealing member filling process is included to fill a sealing member, which has a translucency, within the light-reflecting resin to cover the light-emitting element and the metal film.
    [00028] According to the method for producing the light-emitting device, due to the fact that the light-reflecting resin and the sealing member can be formed, then the light-emitting device with an even more light output effectiveness accentuated and higher durability can be provided. ADVANTAGE EFFECT OF THE INVENTION
    [00029] According to the light emitting device according to the present invention, due to the fact that the light output efficiency can be enhanced by the metal film formed in the region of assembly of the light emitting elements, the output of light from the light-emitting device may be accentuated. In addition, due to the fact that the positive electrode and the negative electrode are formed at locations away from the side face and the back face of the substrate, short-circuiting due to gradual discharge can be prevented, even if the light emitting device enters in contact with a metal body. In this way, the light-emitting device can be directly installed on the metal body. In addition, due to the fact that the galvanizing wire is extended to the side of the substrate, heat dissipation can be accentuated.
    [00030] According to the method for producing the light-emitting device, the light-emitting device has a high output, which allows the light-emitting device to be directly installed in the metal body. Particularly, after forming the metal member by non-electrical galvanizing, forming the metal film by electrogalvanizing, then the manufacturing process can be made simple, so productivity can be enhanced. BRIEF DESCRIPTION OF THE DRAWINGS
    [00031] Figure 1 is a perspective view showing an entire structure of the light emitting device according to the modalities of the present invention.
    [00032] Figure 2 is a front view showing a configuration of the light emitting device according to the modalities of the present invention.
    [00033] Figure 3 is an enlarged front view showing the configuration of the light emitting element.
    [00034] Figure 4 is a front view showing the configuration of the light emitting device according to the modalities of the present invention.
    [00035] Figure 5 is a schematic view to illustrate an arrangement of galvanizing wire in the light emitting device according to the modalities of the present invention, where (a) is a front view showing the arrangement of the galvanizing wire and (b) is a side view showing the placement of the galvanizing wire.
    [00036] Figure 6 is a side view showing a configuration of a substrate and the arrangement of the galvanizing wire in the light emitting device according to another embodiment of the present invention.
    [00037] Figure 7 is a front view showing the configuration of the light emitting device according to another embodiment of the present invention. WAYS TO CARRY OUT THE INVENTION
    [00038] In the following with reference to the drawings, a light-emitting device and a method for producing the light-emitting device according to the embodiment of the present invention will be described. It is noticed that a size, a location relation, etc. of each member shown in each drawing may have some exaggeration for a clearer explanation. In the description below, the same name or the same sign designates the same member or the same quality member and, therefore, a detailed description will be omitted. In addition, in Figures 2 and 7 that will be referred to in the description below, p-electrodes and n-electrodes (see Figure 3) of the light-emitting elements are shown in only four locations in the mounting region to show a direction for each element light emitting and are not shown at other locations in the mounting region. «Light-emitting device >>
    [00039] With reference to Figures 1 to 5, a light emitting device 100 according to the embodiment of the present invention will be described in detail. In the description that follows, first, a general configuration of the light emitting device 100 will be described and after that, each configuration will be described. In addition, for the purposes of illustration, in the front view in Figure 2, only one exterior of a light reflecting resin 6 is shown with a line in a transparent state. <General configuration>
    [00040] The light emitting device 100 is a device used as a lighting adjustment such as an LED lighting lamp, a display device, lighting equipment, a display and a backlight light source for a display. liquid crystal, etc. and a method for producing the same. The light-emitting device 100 includes, as shown in Figures 1, 2, and 4, a substrate 1, a metal film 30 formed in a mounting region 1a on substrate 1, a plurality of light-emitting elements 2 installed in the film of metal 30, a metal member 40 that forms a positive electrode 3 and a negative electrode 4 formed on the substrate 1, galvanizing wires 31 connected to the metal film 30, electronic components such as the light-emitting elements 2 and a protective element 5, and W wires to connect positive electrode 3 or negative electrode 4 as the main configuration. Furthermore, in the present document, a protective element 5 disposed on the positive electrode 3, the light reflecting resin 6 formed on the substrate 1 and a sealing member 7 sealed in the assembly region 1a. <Substrate>
    [00041] Substrate 1 is provided to arrange electronic components such as light-emitting elements 2 and protective element 5. Substrate 1 is, as shown in Figures 1 and 2, formed in a rectangular plate format. In addition, on substrate 1, the mounting region 1a is sectioned to arrange a plurality of light-emitting elements 2. It is realized that a size of substrate 1 is not specifically limited, but is appropriately selected in accordance with the purpose and use such as the number of light-emitting elements 2.
    [00042] As a substrate 1 material, it is preferable to use an insulating material that hardly transmits the light emitted by the light-emitting element 2 and externally incoming light, etc. In addition, it is preferable to use a material that has a substantially sufficient level of stiffness. more specifically, a ceramic (AhO3sAlN, etc.) and a resin such as phenolic resin, epoxy resin, polyimide resin and BT resin (bismaleimide triazine resin) and polyphthalamide (PPA) are usable. <Mounting region>
    [00043] Mounting region 1a is a region for arranging a plurality of light-emitting elements 2. Mounting region 1a is, as shown in Figure 2, sectioned in a central region of substrate 1. Mounting region 1a is formed in a predetermined shape that has sides facing each other, and more specifically, the corners are rounded to be an approximately rectangular shape. In addition, a size and shape of the mounting region 1a are not specifically limited, but are appropriately selected in accordance with the purpose and use such as the number of light-emitting elements 2 and intervals between the rows and rows of the light-emitting elements light 2.
    [00044] When Figure 2 is seen as a plan view, a part of the wiring part 3b and a part of a wiring part 4b are formed along a left side edge of the mounting region 1a, a part of the part of wiring 4b is formed along a bottom side of the mounting region 1a and an interconnecting wiring portion 8 along a right side edge of the mounting region 1a, on a periphery of the mounting region 1a ,. It can be seen that the periphery of the assembly region 1a here means a periphery spaced in a predetermined span from a circumferential edge of the assembly region 1a as shown in Figure 2.
    [00045] The mounting region 1a is provided to form the metal film 30 to reflect light and to arrange a plurality of the light emitting elements 2 by means of the metal film 30 in the mounting region 1a. Due to the fact that the metal film 30 is formed in the assembly region 1a and a plurality of the light-emitting elements 2 is arranged in the metal film 30, for example, in Figure 4, the light towards a side of the region mounting element 1a of the substrate 1 can be reflected by the metal film 30. In this way, a loss in the emitted light can be reduced, so that a light output effectiveness of the light emitting device 100 can be enhanced. <Metal film>
    [00046] The metal film 30 is a layer to reflect the light emitted by the light-emitting element 2 and formed in the mounting region 1a on the substrate 1.
    [00047] The metal film 30 formed in the assembly region 1a can be formed by electroplating. A metal film material 30 is not specifically limited as long as the material can be used for galvanizing. For example, Au (gold) can be used. Au has a feature of ease of absorbing light, however, a reflectivity of light can be increased by additional formation of TiO2 on an Au galvanizing surface.
    [00048] However, it is preferable to form metal film 30 with a material that has a higher reflectivity than metal member 40 with respect to the light emitted by the light-emitting element 2. For example, it is preferable to use Au for the metal member 40 and Ag (silver) for metal film 30. Due to the fact that Ag has a higher reflectivity than Au, the light output effectiveness can be enhanced. It is realized that a thickness of the metal film 30 formed in the assembly region 1a is not specifically limited and can be appropriately selected in accordance with the purpose and use. In addition, metal film 30 and metal member 40 are independently supplied. More specifically, they are not electrically connected.
    [00049] In the embodiment, as shown in Figures 1 and 4, in a top part of the assembly region 1a a sealing member 7 is filled to protect a plurality of the light-emitting elements 2 and the W wires connected to the light-emitting elements 2 of dust, water and external forces, etc. <Light-emitting element>
    [00050] The light-emitting element 2 is a semiconductor element that emits light by itself when a voltage is applied to it. A plurality of the light-emitting elements 2 is, as shown in Figure 2, arranged on the substrate 1 in the mounting region 1a and becomes one to form a light-emitting part 20 in the light-emitting device 100. In addition, the emitting element light 2 is adhered with an adhesive member (not shown) to the mounting region 1a. The connection method using resin paste or solder as the adhesive member can be used. In addition, the light-emitting part 20 shown in the drawing only indicates a region for installing the light-emitting elements 2. The emitting light in the light-emitting part 20 means the light emitted by the light-emitting element 2.
    [00051] As shown in Figure 3, each of the light-emitting elements 2 is formed in a rectangular shape. In addition, the light-emitting element 2 is, as shown in Figure 3, a face-up element (FU) in which a p-electrode 2A is formed on one side of an upper face and an n-electrode B is formed on the other side of the upper face of the light-emitting element 2. In the modality, to arrange the metal film 30 to mount the light-emitting element 2 and the metal members 40 that form the positive electrode 3 and the negative electrode 4 separately, as shown in Figure 3, it is preferable to use the light emitting element 2 in which the p-electrode and the n-electrode are formed on the same side to connect a surface opposite the electrode forming surface to the metal film 30.
    [00052] A p-electrode 2A and an n-electrode 2B respectively include, as shown in Figure 3, a p-side electrode pad (p-pad electrode) 2Aa and the n-side electrode pad (n electrode) -cushion) 2Ba, which are electrode terminals and the extended conductive parts 2Ab and 2Bb, which are auxiliary electrodes to diffuse the current inserted in the light-emitting element 2 throughout. In addition, in the light-emitting element 2, it is sufficient that the p-pad electrode 2Aa and the n-pad electrode 2Ba are on the same side and the extended conductive parts 2Ab and 2Bb may not be arranged. Furthermore, although not shown, the light-emitting element 2 has a configuration in which a plurality of semiconductor layers including n-type semiconductor layers and p-type semiconductor layers when viewed from the side.
    [00053] As the light emitting element 2, it is preferable to use a light emitting diode especially and one that has a desired wavelength can be selected according to the usage. For example, as the light-emitting element 2 of blue color (light having a wavelength from 430 nm to 490 nm) and green color (light having a wavelength of 490 nm to 570 nm), ZnSesum semiconductor based in nitride (InxAlYGai-x-YNsODXsODYsX + YDl) sGaP, etc. can be used. In addition, as the red light-emitting element 2 (light that has a wavelength from 620 nm to 750 nm), GaAlAs, AlInGaP, etc. can be used.
    [00054] In addition, as described below, when a fluorescent substance is introduced into the sealing member 7 (see Figure 1), it is preferable to use a nitride semiconductor (InxAlYGai-x-YNsθDXsθDYsX + YDl) that can emit light that has such short wavelength that the fluorescent substance is effectively excited. However, the elemental composition or the color of light emitted from the light-emitting element 2, a size, etc. are not limited to the above description, but can be selected in accordance with the objective. In addition, the light-emitting element 2 can be configured with an element that emits an ultraviolet ray or an infrared ray in addition to the light in the visible region of the spectrum. In addition, to increase the output energy, the number of light-emitting elements 2 is, for example, ten or more and at a level of 20 to 150.
    [00055] The light-emitting elements 2 are arranged in the assembly region 1a in vertical and horizontal directions in an equidistant manner, respectively in Figure 2. In this example, eight vertically by five horizontally, that is, 40 in total, of elements light emitters 2 are arranged. In addition, the light-emitting elements 2 contiguous with each other in the horizontal and vertical directions of the mounting region 1a are, as shown in Figure 2, connected with electrical conductive wires W for series connection and parallel connection. In addition, the series connection here means such a state in which the p-electrode 2A and the n-electrode 2B in the contiguous light-emitting elements 2 are electrically connected with the W wire. In addition, the parallel connection means such a state in that the p-electrodes 2A or the n-electrode 2B in the contiguous light-emitting elements 2 are electrically connected to each other with wires W, respectively.
    [00056] As shown in Figure 2, between the wiring part 3b of the positive electrode 3 and the interconnecting wiring part 8, the light-emitting elements 2 are arranged so that the p-electrodes 2A of the light-emitting elements 2 are directed on a left side which is a direction of the mounting region 1a and the n-electrodes 2B of the light-emitting elements 2 are directed on a right side which is the other direction of the mounting region 1a.
    [00057] In addition, as shown in Figure 2, between the wiring part 4b of the positive electrode 4 and the interconnecting wiring part 8, the light-emitting elements 2 are arranged so that the p-electrodes 2A of the emitting elements light 2 are directed on a right side which is a direction of the mounting region 1a and the n-electrodes 2B of the light emitting elements 2 are directed on a left side which is the other direction of the mounting region 1a. In other words, the light-emitting elements 2 are arranged in such a way that a direction of them is covered through the interconnecting wiring part 8.
    [00058] In the light-emitting device 100 according to the modality, as described above, the interconnecting wiring part 8 is formed at a periphery of the mounting region 1a and the light-emitting elements 2 are arranged so that the direction of the light-emitting elements 2 is reversed through the interconnecting wiring part 8, so that the number of light-emitting elements 2 connected in series and in parallel can be increased within a limited area of the assembly region 1a without the complexity in the wiring connection of the light-emitting elements 2 to each other. In addition, this provides the arrangement of a plurality of light-emitting elements 2 at a high density within the limited area of the assembly region 1a, so that the light-emitting device 100 which has a marked energy consumption for the same brightness or the light emitting device 100 which has a light emission efficiency for the same energy consumption. In addition, in the light emitting device 100, as shown in Figure 2, four light emitting elements 2 are connected in parallel as well as ten lines of the series connection are connected in series. <Metal member (positive and negative electrodes)>
    [00059] Metal members 40 are provided to form positive electrode 3 and negative electrode 4 to electrically connect electronic components such as a plurality of light-emitting elements 2, protective element 5 on substrate 1 to a power supply to apply the voltage from the external power supply to these electronic components. In other words, the metal members 40 (the positive electrode 3 and the negative electrode 4) serve as electrodes or parts of the electrodes to supply electricity from the outside.
    [00060] The positive electrode 3 and the negative electrode 4 include, as shown in Figure 2, the pad parts (power supply parts) 3a and 4a in approximately rectangular shapes and the wiring parts 3b and 4b in a shape of lines that are configured to apply tension between the pad parts 3a and 4a to a plurality of the light-emitting elements 2 that form the light-emitting part 20 through the wiring parts 3b and 4b. In addition, as shown in Figure 2, on the wiring part 4b of the negative electrode 4, a cathode mark CM indicating that a cathode is formed.
    [00061] Pad parts 3a, 4a are those to which a voltage must be applied from an external power supply. Pad parts 3a, 4a are formed as a pair at locations on a diagonal line at the corners on substrate 1 as shown in Figure 2. Pad parts 3a, 4a are electrically connected to the external power supply (not shown) with wires electrically conductive.
    [00062] Wiring parts 3b, 4b are those for transmitting the voltage applied to the pad parts 3a, 4a from the external power source to the light-emitting elements 2 in the mounting region 1a. As shown in Figures 2, the spinning parts 3b, 4b are formed to extend from the pad parts 3a, 4a as well as and approximately L-shaped peripheries of the assembly region 1a.
    [00063] An end part of the wiring part 3b and an end part of the wiring part 4b are formed to be contiguous with each other at a periphery of the mounting region 1a as shown in Figure 2. As described above, the parts of wiring 3b, 4b of positive electrode 3 and negative electrode 4 are formed at the periphery of the mounting region 1a and the ends of them are formed to be contiguous with each other. This allows a protective element 5, mentioned below, to be arranged in an appropriate location even though a plurality of the light-emitting elements 2 is arranged on the substrate 1 such as the light-emitting device 100. In this way, the voltage between both positive and negative electrodes become equal to or greater than a Zener voltage, which appropriately prevents light-emitting elements 2 from breaking into elements and performance degradation due to the application of excessive voltage.
    [00064] Furthermore, the metal member 40 is formed on an upper surface of the substrate 1 on the side of the mounting region 1 as well as formed separately with a space from the circumferential edge of the support 1 on one side of the mounting region 1a. In other words, the metal member 40 is formed slightly away from the circumferential edge of the substrate 1 on one side of the mounting region 1a. Forming the metal member 40 on the upper surface of the substrate 1 and away from the circumferential edge of the substrate 1 makes the positive electrode 3 and the negative electrode 4 away from the side and back face of the substrate 1, which prevents short-circuiting due to gradual discharge when the light emitting device 100 is activated.
    [00065] More specifically, it is preferred that the spinning parts 3b, 4b are formed so that the end parts of them are formed being contiguous with each other within a region of one side of the mounting region 1a in an approximately rectangular shape in Figure 2. As described above, forming the wiring parts 3b, 4b contiguous within the region on one side of the mounting region 1a can hold a mounting area for wire W to electronically connect the wiring parts 3b, 4b to the light-emitting element 2. Thus, the number of light-emitting elements 2 connected to the wiring parts 3b, 4b, more specifically the number of the light-emitting elements 2 at a start point and an end point for the connection in series and the parallel connection, can be increased, so that the number of lines in the series connection or parallel connection of the light emitting elements 2 can be increased. As described above, the increase in the number of lines and rows in the series connection and parallel connection allows a plurality of the light-emitting elements 2 to be arranged thicker, which provides the light-emitting device 100 which has an energy consumption enhanced for the same brightness or increased light emission efficiency for the same electricity consumption.
    [00066] In addition, it is more preferable that the ends of the wiring parts 3b, 4b are formed contiguous at one midpoint within one side of the mounting region 1a in the approximately rectangular shape shown in Figure 2. This equalizes the number from the lines in the serial connection between the wiring part 3b and the interconnecting wiring part 8 to the number of lines in the serial connection between the wiring part 4b and the interconnecting wiring part 8, so that a plurality of elements light emitters 2 can be arranged thicker within the limited area of the mounting region 1a. Thus, the light-emitting device 100 which has a marked electrical energy consumption for the same constant brightness or an increased light emission efficiency for the same electrical energy consumption.
    [00067] It is preferable to use Au as the material of metal member 40 that forms positive electrode 3 and negative electrode 4. This is due to the fact that when Au, which has an increased callus conductivity, is used as a material of the W wire as described below, the W wires, which have the same material, can be strongly bonded.
    [00068] One method for forming metal member 40 that forms positive electrode 3 and negative electrode 4 is non-electroplating. A thickness of the metal member 40 forming the positive electrode 3 and the negative electrode 4 is not specifically limited and can be appropriately selected in accordance with its purpose and use.
    [00069] Parts of the wiring parts 3b, 4b are, as shown in Figures 1 and 2, covered with the light reflecting resin 6 described below. Thus, even though the wiring parts 3b, 4b are formed with Au which easily absorbs the light as described above, the light emitted from the light-emitting element 2 does not reach the wiring part 3b, 4b, but is reflected by the light reflective resin 6. In this way, a loss of light output can be reduced, so that the light output effectiveness of the light emitting device 100 can be increased.
    [00070] In addition, due to the fact that the parts of the spinning parts 3b, 4b are covered with light reflective resin 6, the wires can be protected from dust, water, an external force, etc. In addition, the parts of the wiring parts 3b, 4b are, as shown in Figure 2, the part, outside the wiring parts 3b, 4b, formed along the side of the mounting region 1a on a periphery of the mounting region 1a . <Galvanizing wire>
    [00071] The galvanizing wire 31 is provided to form the metal film 30 by electroplating, one end of each is connected to the metal film 30 just as the other end is extended to the side face of the substrate 1.
    [00072] This provides connection to an external electrical current source from the side face of the substrate 1, so that electroplating can be carried out by a current flowing through the galvanizing wire 31. A material of the galvanizing wire 31 is not specifically limited as long as the material is electrically conductive. For example, W, Ag can be used.
    [00073] As shown in Figure 5, the galvanizing wires 31 are disposed within the substrate 1 and conducted to the metal film 30 through the through hole SH formed in the substrate 1 (see Figure 2). Due to the fact that the galvanizing wires 31 are disposed within the substrate 1, the galvanizing wires 31 can be extended to the side face of the substrate 1 without any limitation in the arrangement of the metal member 40 on the substrate 1. Furthermore, due to due to the fact that the galvanizing wires 31 which have a higher heat dissipation than substrate 1, which is an insulating member, are disposed within substrate 1, a heat dissipation can be accentuated. As shown in Figure 5 (b), the galvanizing wire 31 and the metal film 30 are connected with a conductive member 32 filled in the through hole SH. In Figure 5 (b), the conducting members 32 are shown only on the dotted line part for purposes of illustration. As the driving member 32, W, Ag, etc. can be used. The conductive member 32 can be formed with the same material as the galvanizing wire 31 in its entirety. In addition, a width of the galvanizing wire 31 can be the same as a width of the through hole SH as shown in Figure 5 (b). However, the width of the through hole SH may be less than the width of the galvanizing wire 31.
    [00074] In this document, the exposure of the side face means, as shown in Figure 5, that a cross section of the galvanizing wire 31, more specifically, only a cross section parallel to the side face of the substrate 1 is exposed, that the galvanizing wire 31 is exposed in a slightly excavated location from the side face of substrate 1 into substrate 1 (for example, about 1 to 8 μm), or that part of the galvanizing wire 31 is exposed from the side face of the substrate 1. Among these, in particular, it is preferred that the part of the galvanizing wire 31 is exposed from the side face of the substrate 1. For example, one end of the galvanizing wire 31 is arranged in the same plane as the face side of the substrate 1. Thus, due to the fact that the side face of the galvanizing wire 31 is also exposed to ambient air, the heat dissipation can be even more accentuated. In addition, from the point of view of avoiding short-circuits, as shown in Figure 5, it is preferable to arrange the galvanizing wires 31 within the substrate 1, which is an insulating member. Thus, when a posterior face of the substrate 1 is placed in a metal body, a short circuit through the galvanizing wire 31 is prevented due to the fact that the metal body is not in contact with the galvanizing wires 31.
    [00075] Furthermore, it is preferred that the substrate is formed having one pair of facing sides and the other pair of facing sides, the pad part 3a of the positive electrode 3 and the pad part 4a of the negative electrode 4 are formed along from one pair of the confronting sides and the galvanizing wires 31 are extended towards another pair of the confronting sides. More specifically, as shown in Figure 2, for example, substrate 1 is formed in a rectangular shape, the pad parts 3a, 4a are formed in a substantially rectangular shape of which the longitudinal direction is along (in parallel to) a pair of confronting sides of the substrate 1. In addition, as shown in Figure 5, the galvanizing wires 31 are extended to the other pair of confronting sides that is perpendicular to the sides, which is formed along (in parallel to) a direction longitudinally of the pad parts 3a, 4a.
    [00076] In addition, the arrangement is preferably made so that the pad part 3a of the positive electrode 3 and the pad part 4a of the negative electrode 4 are arranged without overlapping the galvanizing wires 31. In other words, when the device light emitter 100 is seen from an upper position, the pad parts 3a, 4a are preferably formed in laterally offset locations of the galvanizing wires 31.
    [00077] This configuration eliminates the possibility of discharging to the cushion parts 3a, 4a via the galvanizing wire 31 as relay points when the light emitting device 100 is activated, so that the short circuit due to the discharge is prevented. <Protective element>
    [00078] The protective element 5 is an element to protect the light-emitting part 20 which includes a plurality of the light-emitting elements 2 against rupture of the elements and degradation of performance due to an application of excessive tension. The protective element 5 is disposed on an end part of the wiring part 3b of the positive electrode 3 as shown in Figure 2. However, the protective element 5 can be disposed on an end part of the wiring part 4b of the negative electrode 4 .
    [00079] The protective element 5 is formed with, more specifically, a Zener diode (Zener diode) that enters a conductive state when a voltage greater than a prescribed voltage is applied. Although the illustration of the protective element 5 in detail is omitted, the protective element 5 is a semiconductor that has a p-electrode and an n-electrode like the light-emitting element 2 mentioned above and is electrically connected with wires to the part of wiring 4b of negative electrode 4 to have an inverse parallel connection to p-electrode 2A and n-electrode 2B of the light emitting element 2.
    [00080] According to this configuration, although a voltage between positive electrode 3 and negative electrode 4 exceeds a Zener voltage of the Zener diode due to the fact that an excessive voltage is applied to it, the voltage between the positive electrodes and negatives of the light-emitting element is maintained at the Zener voltage and does not exceed the Zener voltage. Thus, the installation of the protective element 5 prevents the voltage between the positive and negative electrodes from being higher than the Zener voltage, which prevents the rupture of elements in the light-emitting element 2 or degradation in the characteristics due to the application of excessive voltage .
    [00081] As shown in Figure 2, the protective element 5 is covered with the light reflective resin 6 described below. In this way, the protective element 5 and the W wires connected to the protective element 5 are protected against dust, water, external forces, etc. In addition, a size of the protective element 5 is not specifically limited and can be appropriately selected in accordance with the purpose and use. <Light reflective resin>
    [00082] The light reflecting resin 6 is a member to reflect the light emitted from the light emitting element 2.
    [00083] The light reflecting resin 6 is formed, as shown in Figure 2, to cover the parts of the wiring parts 3b, 4b, the interconnecting wiring part 8, the protective element 5 and the wires connected to these parts . According to this configuration, even in a case where the wiring parts 3b, 4b, the interconnecting wiring part 8, and the wires are formed with Au which easily absorbs the light as described above and below, the light emitted by the light-emitting element 2 is reflected by the light-reflecting resin 6 without the light reaching the wiring parts 3b, 4b, the interconnecting wiring part 8 and the wires. This reduces a loss in the light emitted, so that the light output effectiveness of the light emitting device 100 may be enhanced. In addition, due to the fact that the light reflecting resin 6 covers the parts of the wiring parts 3b, 4b, the interconnecting wiring part 8, the protective element 5 and the W wires connected to these parts, these parts can be protected from dust, water, external forces, etc.
    [00084] The light-reflecting resin 6 is formed in a rectangular frame shape to surround the mounting region 1a, as shown in Figures 1 and 2, in which the light-emitting part 20 is formed on substrate 1, that is, along a circumferential edge of the assembly region 1a. As described above, due to the fact that the light reflecting resin 6 is formed to surround the mounting region 1a, the light towards a circumference of the mounting region 1a such as, for example, the light emitted from the emitting elements of light 2 arranged on both the right and left sides in Figure 4 can be reflected by the light reflecting resin 6. In this way, a loss in the emitted light can be reduced, so that the light output effectiveness of the light emitting device 100 can be increased.
    [00085] In addition, as shown in Figure 2, it is preferable to form the light reflective resin 6 to cover part of the circumferential edge of the assembly region 1a. As described above, the formation of the light-reflecting resin 6 to cover a part of the circumferential edge of the mounting region 1a eliminates a possibility in the formation of a region in which a part of the substrate is exposed between the spinning parts 3b, 4b and the metal film 30 in the assembly region 1a. Thus, due to the fact that the light emitted by the light-emitting element 2 is all reflected in a region within which the light-reflecting resin 6 is formed, the loss in the emitted light can be reduced to the maximum, so that the Light output effectiveness of the light emitting device 100 can be enhanced.
    [00086] As a light reflective resin material 6, an insulation material is preferably used. In addition, to ensure the same level of rigidity, for example, a thermostable resin, a thermoplastic resin, etc. can be used. More specifically, phenolic resin, epoxy resin, BT resin, PPA, a silicon resin, etc. are usable. In addition, a powder of a reflective material (for example, TiO2, Al2O3, ZrO2, MgO, etc.), which hardly absorbs the light from the light-emitting element 2 and has a greater difference in a refractive index of the resin as a matrix material, is dispersed in the resin as the matrix material, so that the light can be reflected effectively. A size of the light-reflecting resin 6 is not specifically limited, but can be selected according to the purpose and use. In addition, at a location of the light-reflecting resin 6, a light-reflecting member made of a material other than the resin can be formed. <Sealing member>
    [00087] The sealing member 7 is a member to protect the light-emitting element 2, the protective element 5, the metal film 30, and the wires arranged on substrate 1 against dust, water, external forces, etc. The sealing member 7 is formed by filling a resin into the light reflecting resin 6, that is, within the mounting region 1a surrounded by the light reflecting resin 6 as shown in Figures 1, 2 and 4.
    [00088] As a material of the sealing member 7, a material that has a translucency of light from the light-emitting element 2 is preferred. As a more specific material, silicone resin, epoxy resin and urea resin, etc. are usable. In addition to those described above, if necessary, a coloring agent, a light diffusing agent, filler, fluorescence members, etc. may be contained.
    [00089] The sealing member 7 can be formed with a single member or as a plurality of (more than two) layers. A quantity of the sealing member 7 is as much as the sealing member 7 can cover the light-emitting element 2, the protective element 5, the metal film 30 and the wire W, etc., which are arranged within the mounting region 1a surrounded by light-reflecting resin 6. In addition, in a case where the sealing member 7 is made to have a lens function, the sealing member 7 can be formed into a pump shape or a convex lens by protrusion of a surface of the sealing member 7. <Fluorescence member>
    [00090] It is also possible for the sealing member 7 to contain a fluorescence member in it to emit light that has a different wavelength from the light of the light-emitting element 2 by absorbing a part of the light from the light-emitting element 2 Like the fluorescence member, a member that can convert the light from the light-emitting element 2 into a longer wavelength is preferred. In addition, the fluorescence member can be formed with a single layer of a type of fluorescence material, etc. or as a single layer in which more than one type of fluorescence materials, etc. are mixed. Alternatively, more than one single layer that contains a type of fluorescence material, etc. are laminated or more than a single layer in which more than one type of fluorescence material are mixed respectively, can be laminated. As a more specific material of the fluorescence member, for example, a YAG-based fluorescence substance having a garnet structure including yttrium and aluminum, a nitrate-based fluorescence substance that are mainly activated by lanthanide elements such as Eu and Ce, etc., and an oxynitride-based fluorescence substance are usable. <Interconnection wiring part>
    [00091] Interconnect wiring part 8 is an interconnect member for wiring between positive electrode 3 and negative electrode 4. Interconnect wiring part 8 is formed with a metal member on substrate 1 as shown in Figure 2 The interconnecting wiring portion 8 is formed, as shown in Figure 2, at a periphery of the mounting region 1a in a line shape along one side of the mounting region 1a.
    [00092] Interconnect wiring part 8 is covered with light reflective resin 6 as shown in Figure 2. Thus, as described below, even in a case where Au easily absorbs light it is used as the metal member forming the interconnect wiring part 8, the light emitted from the light emitting element 2 does not reach the interconnect wiring part 8, but is reflected by the light reflecting resin 6. This configuration can reduce the loss in the output, so that the light output effectiveness of the light emitting device 100 can be enhanced. In addition, covering interconnect wiring part 8 with light reflective resin 6 protects interconnect wiring part 8 from dust, water, external forces, etc.
    [00093] As the material of the metal member that forms the interconnecting wiring part 8, Au is preferred as the positive electrode 3 and the negative electrode 4. This is due to the fact that when the Au, which has a conductivity of increased heat, is used as a material of the W wire as described below, the W wires, which have the same material, can be strongly bonded.
    [00094] One method for forming the metal member that forms the interconnecting wiring part 8 is non-electrical galvanizing like the positive electrode 3 and the negative electrode 4. A thickness of the metal member forming the interconnecting wiring part 8 is not specifically limited and can be appropriately selected in accordance with its purpose and use.
    [00095] In the light emitting device 100 according to the modality, as described above, the interconnecting wiring part 8 is formed at a periphery of the mounting region 1a and the light emitting elements 2 are arranged so that the direction of the light-emitting elements 2 is reversed through the interconnecting wiring part 8, so that the number of light-emitting elements 2 connected in series and in parallel can be increased within a limited area of the assembly region 1a without the complexity in the wiring connection of the light-emitting elements 2 to each other. In addition, this provides the arrangement of a plurality of light-emitting elements 2 at a high density within the limited area of the assembly region 1a, so that the light-emitting device 100 which has a marked energy consumption for the same brightness or the light emitting device 100 which has a light emission efficiency for the same energy consumption. <Yarn>
    [00096] W wire is an electrically conductive wiring for electrically connecting electronic components such as light-emitting element 2 and electronic components such as protective element 5, to positive electrode 3 and negative electrode 4 and the wiring part interconnect 8, etc. As a material of wire W, a metal such as Au, Cu (copper), Pt (platinum), Al (aluminum) and an alloy thereof can be used. In particular, it is preferable to use Au which has a higher heat conductivity. In addition, a wire diameter W is not specifically limited, but can be appropriately selected in accordance with the purpose and use.
    [00097] The connection parts between the W wire and the positive electrode 3, the negative electrode 4 and the interconnecting wiring part 8 are covered with the light-reflecting resin 6 as shown in Figure 2. Thus, as described above , even in a case where Au, which easily absorbs light, is used as a material of the W-wire, the light emitted by the light-emitting elements 2 is not absorbed by the W-wires, but is reflected by the light-reflecting resin 6. This configuration can reduce the loss in the output light, so that the light output effectiveness of the light emitting device 100 can be enhanced. In addition, I have covered interconnect wiring part 8 with light reflective resin 6 protects interconnect wiring part 8 from dust, water, an external source, etc. The light emitted from the light emitting device 100 is the light emitted on a surface of the sealing member 7 surrounded by the light-reflecting resin 6 as shown in Figures 1 and 4. In other words, the surface of the sealing member 7 is a surface light emitting device 100. [Operation of the light emitting device]
    [00098] According to the light-emitting device 100 as described above, when the light-emitting device 100 is activated, the light that advances upwards out of the light emitted from the light-emitting element 2 that advances in all directions it is emitted towards the outside above the light emitting device 100. In addition, the light that advances downwards or lateral directions is reflected by a bottom or side wall in the mounting region 1a on the substrate 1 and it is emitted upwards by the emitting device light 100. In this operation, the bottom of the substrate 1, that is, the metal film 30 covers the mounting region 1a and the light reflecting resin 6 is formed around the mounting region 1a, so that the absorption of light that is suppressed as well as the light is reflected by the metal film 30 and the light reflective resin 6. In this way, the light from the light-emitting element 2 is emitted from the light-emitting elements 2 in a high efficiency. << Method for producing the light-emitting device >>
    [00099] In the following, with reference to the drawings, a method will be described for producing the light emitting device according to the embodiment of the invention in which an example shown in Figures 1 to 5 is taken.
    [000100] The method for producing the light emitting device 100 according to the present invention includes a substrate production process, a galvanizing process, a mold bonding process and a wire bonding process. In addition, after the wire bonding process, a light reflective resin forming process and a sealing member filling process can be included. In addition, the method includes a protective element connection process here.
    [000101] Each process will be described below. Due to the fact that the configuration of the light emitting device has been described above, an additional description may be omitted from time to time. <Substrate production process>
    [000102] The substrate production process is a process for producing substrate 1 in which the galvanizing wire 31 is formed.
    [000103] In the substrate production process, parts to be made as the assembly region 1a, the positive electrode 3, and the negative electrode 4 on the substrate 1 are formed by standardizing the parts in predetermined formats. In addition, in the substrate production process, the galvanizing wires 31 to form the metal film 30 in the assembly region 1a on the substrate 1 are formed by electroplating. The galvanizing wires 31 can be formed within substrate 1, i.e., on an upper face of the lower substrate 1B by a printing method, etc.
    [000104] In addition, in the parts to receive galvanization such as the parts to be made in the assembly region 1a, the positive electrode 3 and the negative electrode 4, Ni films are previously formed as support layers by an electrogalvanizing method, non-electrical galvanizing, dripping, etc. In the galvanizing process, galvanizing is performed on the Ni support layer.
    [000105] In addition, as shown in Figure 2, on the substrate 1, a through hole SH to electrically connect the galvanizing wire 31 inside the substrate 1 to the metal film 30. In addition, the through hole SH is filled with W in it and connected to the galvanizing wire 31 and then covered with metal film 30. As shown in Figure 5 (b), the upper substrate 1A is rolled over the lower substrate 1B and the upper substrate 1A on the lower substrate 1B is made as a substrate 1. <Galvanizing process>
    [000106] The galvanizing process is a process for forming metal member 40 to supply positive electrode 3 and negative electrode 4 by non-electrical galvanizing on substrate 1 on which the galvanizing wires 31 were formed as well as forming the film of metal 30 in the mounting region 1a on substrate 1 by electroplating. In a case where the interconnecting wiring part 8 is installed, a metal member is formed in a process similar to the process that forms the positive electrode 3 and the negative electrode 4.
    [000107] In the present document, an order of formation of the metal member 40 by non-electric galvanization and the metal film 30 by electrogalvanization is undefined. However, it is preferable that first the metal members 40 for the positive electrode 3 and the negative electrode 4 are formed as well as another metal member 40 is also formed in the assembly region 1a and then the metal film 30 is formed by electroplating on metal member 40 in assembly region 1a.
    [000108] If metal film 30 is formed by electroplating previously, it is necessary to use a mask, etc. to prevent metal film 30 from being covered with metal member 40 in a case where metal member 40 is formed by non-electroplating after the formation of metal film 30. In this way, the production process becomes complicated. On the other hand, if metal film 30 is formed by electroplating, after metal member 40 is formed by non-electrical galvanizing, it is unnecessary to use a mask, etc. due to the fact that the metal film 30 is formed on the metal member 40 in the assembly region 1a. In addition, due to the fact that the metal film 30 is formed through the metal member 40, the flatness of the metal film 30 is enhanced, so that the light output efficiency emitted by the light emitting elements 2 can be accentuated.
    [000109] The method of non-electroplating and electroplating is not specifically limited, but can be performed by the conventional known method. <Mold bonding process>
    [000110] The mold bonding process is a process for installing the light-emitting elements 2 on the metal film 30. The mold bonding process includes an installation process for the light-emitting element and a heating process. [Installation process for the light-emitting element]
    [000111] The installation process for the light-emitting element is a process for installing the light-emitting element 2 through a connecting member (not shown) on substrate 1 (in the metal film 30).
    [000112] The light-emitting element 2 is connected to the metal film 30 on the substrate 1 with the connecting member. In addition, on a back face of the light-emitting element 2 it can be pre-coated with flux. In the present document, due to the fact that this is insufficient to provide the connecting member so that the connecting member intervenes between the metal film 30 and the light-emitting element 2, the connecting member can be formed only in one region in which the light-emitting elements 2 are placed outside the area of the metal film 30 or just on the side of the light-emitting elements 2. Alternatively, the connecting member can be formed on both sides.
    [000113] When a bonding member in a liquid state or a paste state is formed on metal film 30, one is appropriately selected from a potting method, a printing method, a transfer method, etc. Then, the light-emitting elements 2 are placed in the parts where the connecting members are formed. In addition, when a solid state bonding member is used, after the solid state bonding member is placed, the light-emitting elements 2 can be placed on metal film 30 in the same way as the solid state bonding member. liquid or paste. In addition, the light-emitting element 2 can be fixed at a desired location on the metal film 30 by that binding member in the solid state or in the paste state which is once melted by heating, etc. [Heating process]
    [000114] The heating process is a process for connecting the light-emitting element 2 to the substrate 1 (in the metal film 30) by heating the connecting member after the light-emitting element 2 is placed.
    [000115] The connecting member can be an insulating member and heating in the heating process is carried out at a temperature higher than a temperature at which at least a part of the connecting member vaporizes. In addition, when the bonding member includes a thermostable resin, it is preferable to heat the bonding member to a temperature higher than a temperature at which the hardening of the thermostable resin begins. In this way, the light-emitting element 2 can be connected and fixed with the thermostable resin. In addition, for example, in a case where resin components that include, for example, pitch and a metal that has a low melting temperature are used, when the metal that has a low melting temperature is placed on the metal 30, it is preferable to heat them to a temperature higher than a temperature at which the metal which has a low melting temperature melts.
    [000116] In addition to heating in the heating process, a cleaning process can be done successively after the heating process.
    [000117] For example, when resin components are used as the bonding member, after a part of the resin components are vaporized by heating, the remaining resin components can be removed by a cleaning process after a part of the resin components. resin is lost by vaporization (remaining from the bonding member cleaning process). Particularly, when resin components include pitch, it is preferable to perform cleaning after heating. As a cleaning liquid, it is preferable to use an organic solvent of glycol ether series. <Protective element connection process>
    [000118] The protective element bonding process is a process for placing the protective element 5 on the wiring part 3b of the positive electrode 3 and for connecting the protective element 5.
    [000119] The connection of the protective element 5 can be performed at the same time as the connection of the light-emitting elements 2, but it can be done before or after the connection of the light-emitting elements 2. Due to the fact that the method for installing and connecting the protective element 5 is the same as the mold connection process, the description is omitted here. <Wire connection process>
    [000120] The wire bonding process is a process for electrically connecting the positive electrode 3 of the metal member 40 to the terminal electrode (pad electrode) in an upper part of the light-emitting element 2 with the W wires after the process of mold connection. Similarly, the wire bonding process is a process for electrically connecting the electrode terminals (pad electrode) on an upper surface of the light-emitting element 2 to the negative electrode 4 of the metal member 40 with the wires. in this process, a plurality of the light-emitting elements 2 are connected via the electrode terminals (pad electrodes), respectively. In addition, the electrical connection between the protective element 5 and the negative electrode 4 is carried out by this process. In other words, the electrode terminal at the top of the protective element 5 is connected to the negative electrode 4 with the W wire. A method for connecting the W wire is not specifically limited, but it can be performed by a method used in general. <Light-reflecting resin formation process>
    [000121] The light reflective resin forming process is a process for forming the light reflective resin 6 along a circumferential edge of the mounting region 1a to cover at least the wiring parts 3b, 4b of the positive electrode 3 and negative electrode 4 after the wire connection process.
    [000122] The formation of the light-reflecting resin 6 can be performed with, for example, a resin dispenser (not shown) movable up and down or horizontally with respect to substrate 1 above fixed substrate 1 (see JP2009-182307 THE).
    [000123] In other words, the light-reflecting resin 6 is formed in the vicinity of the light-emitting elements 2 by movement of the resin dispenser filled with a resin with liquid resin that is released from a nozzle at one end of the resin dispenser. A movement speed of the resin dispenser can be appropriately adjusted according to a viscosity or a temperature, etc. of the resin used. In order that a plurality of light-reflecting resins 6 have substantially the same widths, a constant speed movement is preferred at least during the release of the resin. When the release of the resin is interrupted during movement, the movement speed during the period can be changed. In addition, it is preferable to produce a constant amount of released resin. In addition, it is preferred that the movement speed of the resin dispenser and the amount of resin release are made constant. The amount of resin released can be controlled by making it constant pressure, etc. during release. <Filling member filling process>
    [000124] The sealing member filling process is a process for filling the sealing member 7 which has a translucency to cover the light-emitting elements 2 and the metal film 30 within the light-reflecting resin 6.
    [000125] More specifically, the sealing member 7 to cover the light-emitting element 2, the protective element 5, the metal film 30, the wire W, etc. it is formed by injection of a molten resin into the walls made of the light reflecting resin 6 formed on the substrate 1 and the hardening of the resin by heating or emitting light, etc. then.
    [000126] The modalities of the present invention have been described. However, the present invention is not limited to the modalities and can be modified without departing from the meaning of the present invention.
    [000127] In other words, the modalities are only examples to incorporate the technical concept of the present invention, but the present invention is not limited to the modalities of the light emitting device. In addition, the members described in the claims are not limited to the members described in the modalities. Particularly, sizes, material qualities, shapes and relative arrangement etc. they are not limiting the scope of the invention to only those shown in the examples, but are examples for illustration only, unless otherwise specified.
    [000128] For example, the following configuration is also possible like other modalities. [Other modalities]
    [000129] As shown in Figure 6, substrate 1 can be formed with a substrate blade. Galvanizing wire 31 is formed inside substrate 1 in the above embodiment, but galvanizing wire 31 can be formed in a lower part of substrate 1. When substrate 1 is formed with a substrate blade, there is no need to roll two substrate slides (the upper substrate 1A, the lower substrate 1B), but formed with a substrate slide, and thus the production process can be simplified. Furthermore, due to the fact that the galvanizing wire 31 is formed at the bottom of the substrate 1, then this heat dissipation can be accentuated.
    [000130] Furthermore, as shown in Figure 7, the light-emitting device 101 can have such a configuration that the galvanizing wire 31 is arranged on an upper face of the substrate 1. Such a configuration allows the galvanizing wire 31 to be formed in a way simple. In that case too, substrate 1 can be formed with a substrate blade. For the sake of explanation, only the exterior of a light reflecting resin 6 is shown in the front view of Figure 7 with lines in a transparent state.
    [000131] In addition, although not shown in the drawings, there may be a series connection to electrically connect contiguous light-emitting elements 2 in the lateral direction of the mounting region 1a with the electrically conductive wires W. In other words, the p -electrode 2A and n-electrode 2B of the contiguous light-emitting elements 2 are electrically connected with the W wire. This configuration makes the production of the light-emitting device easy and simple. In addition, a connection situation between the light emitting element 2 and the wire W, a connection situation between the light emitting element 2 to the positive electrode 3 and the negative electrode 4, etc. it can be modified in any connection situation as long as the modification is possible as the configuration of the light emitting device.
    [000132] When a galvanizing wire formation location 31 or the configuration of substrate 1 is modified, substrate 1 is produced to have the configurations described above in the production method of the light emitting device.
    [000133] In addition, in the production method of the light-emitting device, additional processes in addition to the process described above can be included between, before or after the processes described above as long as there is no adverse effect on the respective processes. For example, another process can be included such as a substrate cleaning process to clean the substrate, an unwanted substance removal process to remove unwanted substances such as dust, an installation location adjustment process to adjust the installation location of the light-emitting element, the protective element. DESCRIPTION OF REFERENCE NUMBERS 1 substrate 1A upper substrate 1B lower substrate 1st mounting region 2 light-emitting element 2A p-electrode 2Aa p-pad electrode 2Ab extended conductive part 2B n-electrode 2Ba n-pad electrode 2Bb extended conductive part 3 positive electrode 3rd pad part 3b wiring part 4 negative electrode 4a pad part 4b wiring part 5 protective element 6 light reflecting resin 7 sealing member 8 interconnecting wiring part 20 light emitting part 30 metal film 31 galvanizing wire 32 conducting member 40 metal member 100, 101 CM light emitting device SH cathode mark through hole W wire
    权利要求:
    Claims (12)
    [0001]
    1. Light-emitting device (100) comprising: a substrate (1) having an upper face, a rear face opposite to the upper face and side faces, characterized by the fact that it still comprises: a metal film (30) supplied in a mounting region (1a) on the upper surface of the substrate (1); a light-emitting part (20) including a plurality of light-emitting elements (2) arranged on the metal film (30); metal members (40) formed on the upper face of the substrate (1), including, respectively, cushion parts (3a, 4a) and wiring parts (3b, 4b), forming positive and negative electrodes (3, 4) configured for apply a voltage to the light-emitting element (2) through the wiring parts (3b, 4b), respectively; and a galvanizing wire (31) connected to the metal film (30) and extended to a side face of the lateral faces of the substrate (1), in which the metal film (30) and the metal members (40) are arranged separated from each other, where the wiring part (3b) of the positive electrode (3) and the wiring part (4b) of the negative electrode (4) are formed on the periphery of the mounting region (1a) and where the members metal (40) are formed separate from all the side faces of the substrate (1) and where the positive and negative electrodes (3, 4) are separated from the side faces and the back face of the substrate (1).
    [0002]
    2. Light-emitting device (100) according to claim 1, characterized by the fact that the galvanizing wire (31) is installed inside the substrate (1) and connected to the metal film (30) by means of a through hole (SH) formed in the substrate (1).
    [0003]
    3. Light-emitting device (100) according to claim 2, characterized in that a part of the galvanizing wire (31) installed on the substrate (1) is exposed on a side face of the substrate (1).
    [0004]
    4. Light-emitting device (100) according to any one of claims 1 to 3, characterized in that the substrate (1) is formed in a predetermined shape that has a pair of facing sides and another pair of facing sides , in which the pad (3a) of the positive electrode (3) and the pad (4a) of the negative electrode (4) are formed along a pair of confronting sides, and where the galvanizing wire (31) is extended to another pair of the confronting sides.
    [0005]
    Light-emitting device (100) according to any one of claims 1 to 3, characterized in that the pad (3a) of the positive electrode (3) and the pad (4a) of the negative electrode (4) do not overlap the galvanizing wire (31).
    [0006]
    6. Light-emitting device (100) according to any one of claims 1 to 3, characterized in that the metal film (30) has a reflectivity with respect to the light emitted by the light-emitting element (2) more high than the metal member.
    [0007]
    7. Light-emitting device (100) according to claim 6, characterized by the fact that Ag is used as the metal film (30) and Au is used as the metal member (40).
    [0008]
    Light-emitting device (100) according to any one of claims 1 to 3, characterized in that a light-reflecting resin (6) is formed along a circumferential edge of the mounting region (1a) for cover at least the spinning part (3b, 4b), and in which a sealing member (7) that has a translucency is filled into the light-reflecting resin (6) to cover the light-emitting element (2) and the metal film (30).
    [0009]
    9. A method for producing the light emitting device (100) comprising: a substrate production process for producing a substrate (1) that has an upper face, a rear face opposite the upper face and side faces, where a galvanizing wire (31) extending to a side face of the side faces of the substrate (1) is formed within the substrate; a galvanizing process characterized by the fact that it comprises: forming a metal member (40) providing positive and negative electrodes (3, 4) on the substrate (1) by non-electrical galvanization, in which the metal member (40) is formed on the top face of the substrate (1) and separated from the side faces and the back face of the substrate (1), so that the positive and negative electrodes (3, 4) are away from the side faces and the back face of the substrate (1) and forming a metal film (30) by electroplating in a mounting region (1a) on the top face of the substrate using the galvanizing wire (31) provided inside the substrate (1); a mold bonding process for installing a light-emitting element (2) on the metal film (30); a wire bonding process for electrically connecting the positive electrode (3) and the negative electrode (4) to the electrode terminals of the light-emitting element (2) with the wires after the mold bonding process.
    [0010]
    10. Method according to claim 9, characterized by the fact that the galvanizing process comprises: forming metal members (40) to supply the positive electrode (3) and the negative electrode (4) by non-electrical galvanization as well as in the mounting region (1a), and then forming a metal film (30) on the metal member (40) in the mounting region (1a) by electroplating.
    [0011]
    11. Method according to claim 9 or 10, characterized in that it further comprises a process for forming a light-reflecting resin (6) to form a light-reflecting resin (6) to cover at least the parts wiring (3b, 4b) of the positive electrode (3) and negative electrode (4) along a circumferential edge of the mounting region (1a).
    [0012]
    12. Method according to claim 11, characterized by the fact that it further comprises a sealing member filling process (7) to fill a sealing member (7) that has a translucency within the light-reflecting resin (6) to cover the light-emitting element (2) and the metal film (30).
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    同族专利:
    公开号 | 公开日
    JPWO2011129202A1|2013-07-18|
    CN103098247B|2015-10-21|
    TW201203631A|2012-01-16|
    KR101593740B1|2016-02-12|
    EP2560219A1|2013-02-20|
    US9153561B2|2015-10-06|
    BR112012026371A2|2016-08-02|
    EP2560219B1|2018-10-24|
    KR20130087374A|2013-08-06|
    TWI513063B|2015-12-11|
    CN103098247A|2013-05-08|
    JP5842813B2|2016-01-13|
    US20130038246A1|2013-02-14|
    EP2560219A4|2014-11-26|
    WO2011129202A1|2011-10-20|
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    法律状态:
    2019-01-08| B06F| Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]|
    2019-10-01| B06U| Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]|
    2020-06-02| B06A| Patent application procedure suspended [chapter 6.1 patent gazette]|
    2020-09-24| B09A| Decision: intention to grant [chapter 9.1 patent gazette]|
    2020-12-15| B16A| Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 01/04/2011, OBSERVADAS AS CONDICOES LEGAIS. |
    优先权:
    申请号 | 申请日 | 专利标题
    JP2010-094717|2010-04-16|
    JP2010094717|2010-04-16|
    PCT/JP2011/058422|WO2011129202A1|2010-04-16|2011-04-01|Light-emitting device and manufacturing method for light-emitting device|
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