light emitting device

专利摘要:
LIGHT-EMITTING DEVICE. The present invention relates to a light-emitting device (100, 200, 100A, 200A, 300A, 400A) includes a base member (101, 201), electrical conductive members (102a, 102b) disposed on the base (101, 201), a light-emitting element (104, 104A, 204A, 304A, 404A) mounted on the electrical conductive members (102, 102a, 102b, 202a, 202b, 202c, 202d, 302, 402), a filler insulation (114) covering at least part of the surfaces of the electrically conductive members (102, 102a, 102b, 202a, 202b, 202c, 202d, 302, 402) where the light-emitting element (104, 104A, 204A, 304A, 404A ) is not mounted, and a light transmitting member (108) covering the light emitting element (104, 104A, 204A, 304A, 404A).
公开号:BR112012020317B1
申请号:R112012020317-7
申请日:2011-01-28
公开日:2020-10-13
发明作者:Motokazu Yamada；Ryota Seno；Kazuhiro Kamada
申请人:Nichia Corporation；
IPC主号:

专利说明:

Descriptive Report of the Invention Patent for "SITIVO EMITOR DE LUZ". Fundamentals of the Invention Technique Field
[0001] The present invention relates to a light-emitting device applicable for purposes such as an indicator, a lighting apparatus, a display, a backlight source for liquid crystal display, and a method of manufacturing the device light emitting. Description of the Background Art
[0002] In recent years, several semiconductor devices have been proposed and are being put to practical use, and the demand for high performance is always increasing. In particular, electrical components are required to have high reliability to maintain performance for a long period of time, in other words, to maintain stable operation for a long period of time, even under a harsh environment. The same applies to light-emitting diodes (LEDs) and other light-emitting devices. Demands for higher performance in the area of general lighting, vehicle lighting, and so on, are growing daily, and higher output (higher luminance) and greater reliability are also required. An additional demand is to supply this device at a low price while fulfilling these requirements.
[0003] In order to obtain higher output power, it is efficient to improve the optical efficiency of the light-emitting element (light-emitting semiconductor element) that is to be used. For a method to improve the optical output power of the light-emitting element, for example, a method that uses a small cubic chip (light-emitting element) is employed (for example, see Patent Literature 1). Particularly, in the case where a gallium nitride based LED is used for the light-emitting element, the light emitted from the light-emitting element propagates in the semiconductor layer, and therefore is absorbed when it is reflected in the electrode or something similar (for example, see Patent Literature 2). For this reason, the cube is made as a small chip to allow the emitted light to be drawn out. In this way, light loss through absorption can be reduced. In the case where a small cubic tablet is used, a limited amount of electrical current is allowed to flow through. In this way, employing a multicube structure that has a plurality of small inserts allows to obtain a desired optical output efficiency.
[0004] Additionally, for a structure of the light-emitting element, a chip of the type of direct connection (flip-chip) can be used in which the surface of the electrode to be electrically connected to an external electrode is laid down (hereinafter onwards can be referred to as a face-down element or FD element). (see Patent Literature 1, 3). This structure does not have an electrode and / or wire etc., on the main light extraction surface of the light emitted from the light emitting element. Therefore, it is said that it is capable of further improving the efficiency of optical output (extraction efficiency).
[0005] Also, in order to improve the optical output power of the light emitting element, a silver plating that has a high reflectance is typically applied to the electrical conductive member used for the base member. On the other hand, as the base member material, in the fields of general lighting, vehicle lighting, and backlighting light source, ceramic materials that are resistant to deterioration under high temperature and high optical density are typically used (for example, see Patent Literature 1).
[0006] Additionally, gold (Au) is typically used as a conductive wire used for a protective element or a face-up element (hereinafter referred to as a FU element) that has an electrode surface disposed over the light-emitting element. AU wire is very soft and a ball binding technique can be used, so that very thin wires of 100 pm or less can be used, for example, (diameter) of a few tens of micrometers. Thus, in the case where a plurality of light-emitting elements are mounted, a plurality of conductive wires can be used.
[0007] Typically, a light-emitting device has a base member (an enclosure, that is, a mounting substrate that has a wiring pattern, etc.) on which electrical components such as a light-emitting element and a protective element, and electrical conductive members that provide electrical current (electrical power) for these electrical components. The light-emitting device has traditionally been a sealing member that protects electrical components from the external environment. However, loss due to light absorption (loss of light by absorption) occurs depending on the materials of the base member, electrical conductive members, sealing member, etc. In particular, the surface area of the electrical conductive members is relatively large, loss of light by absorption by the electrical conductive members can reduce the efficiency of light extraction. For higher output power, the efficiency of light extraction must be improved, and for this, the improvement in the optical output efficiency of the light emitting element (semiconductor light emitting element) and the reduction of loss of energy are effective. light by absorption by the base member materials (including the housing), electrical conductive members, and sealing member.
[0008] In order to improve the efficiency of light extraction, for example, it is proposed to apply a galvanization of a metal member that has high reflectance on the inner surface of the enclosure to suppress light absorption by the base member and to effectively extract light outside (see Patent Literature 4).
[0009] Having a member that has high reflectance in the light-emitting device is seen as a way to suppress optical absorption by the members used in the light-emitting device, but among these materials that have high reflectance (such as silver), some materials they are subject to sulfuration or halogenation and can cause long-term reliability problems. That is, there has been a problem in which, discoloration of the material due to sulfuration or halogenation by the sulfur component, etc., contained in the atmosphere causes a reduction in the reflectance of the material, which results in a reduction in the efficiency of light extraction.
[00010] In order to solve this problem, Patent Literature 5 reveals formation of titanium dioxide (TIO 2) etc., as a protective film on the surface of a metal reflection film using sputtering or vapor deposition to improve its gas barrier property. Patent Literature 6 also reveals a reduction in heat problems by a discoloration-free reflector formed by covering the reflector's reflective surface with a high reflection resin layer made of a powder material that has high reflectance mixed with a resin. , and employing a material that has excellent heat dissipation property to the reflector.
[00011] Also, a light-emitting device is known in which, other than as described above, a light-emitting element is mounted in a direct connection insert assembly manner as described in Patent Literature 7. The emitting element of light includes a transparent substrate such as sapphire, and a semiconductor layer stacked on top of it. In the light-emitting element, each electrode is connected in the conductor pattern by means of a corresponding conductive protrusion. With this arrangement, the transparent substrate side of the emitting element qθ | uz can be used as the light extraction side. In addition, a light-emitting device in which a bottom and a side surface are covered with a resin containing a filler (Patent Literature 8 to 11), and an electrodeposition technique qθ titanium dioxide on the light-emitting element (Literature of Patent 12)
[00012] Patent Literature 1: jp 2009-135485A
[00013] Patent Literature 2: jp 2008-112959A
[00014] Patent Literature 3: jp 2005-150484A
[00015] Patent Literature 4: jp 2006-156603A
[00016] Patent Literature 5: jp 2006-351964A
[00017] Patent Literature 6: jp 2007-281260A
[00018] Patent Literature 7: jp 2005-210051A
[00019] Patent Literature 8: jp 2004-172160A
[00020] Patent Literature 9: jp 2007-109948A
[00021] Patent Literature 10: jp 2007-19096A
[00022] Patent Literature 11: jp 2009-130237A
[00023] Patent Literature 12: jp 2004-158843A Disclosure of the Invention Problems Solved by the Invention
[00024] However, these conventional technologies have problems with respect to the extraction of light in light emitting devices as described below. Even the surface of the reflective metal film is coated with titanium dioxide (TiO2) etc., loss of light by portal absorption as the base member and the conductive part occurs depending on the location of the coating, and no further improvement can be achieved. efficient in the light extraction efficiency.
[00025] In order to ensure the insulation between the positive electrode member and the negative electrode member, an insulating region (hereinafter, can be referred to as a groove (groove) in the conductive part) of, for example, is approximately a few hundred microns need to be arranged on the mounting surface of the light-emitting element of the base member and the bottom surface and its part adjacent to the FD element cube, which results in exposure of the base member in the insulating region. Light leakage occurs at the exposed part (wet part) and the direction of the light leak is opposite to the direction of light extraction, resulting in optical loss.
[00026] In the case where a material such as Au is used that has a high absorption optical property in the blue region for the wires that electrically connect the protective element and the light emitting element, a problem may also arise due to the close proximity from the wires to the light emitting element, there is a loss of light by absorption that results in a reduction in the efficiency of light extraction. Additionally, in Patent Literature 4 to 6, there is no description of the solution to these problems. It is also described that the highly reflective resin layer proposed in Patent Literature 6 is a mixture of a resin and a powder material, so that there is a problem in moldability, and there is a tendency for a decrease in moldability particularly in the case where a large amount of the highly reflective powder material is contained (paragraph [0022] etc.).
[00027] In Patent Literature 7, light radiated from the light-emitting element is absorbed by the protrusions and conducting wires. Consequently, the reduction of light absorption by the protrusion and conducting wires is required to improve the efficiency of light extraction. In the field of lighting, the demand for uniform color distribution of light is increasing.
[00028] If a reflective member is applied to the light emitting element, the transparent substrate and the semiconductor layer that constitutes the light emitting element, if all the lateral surfaces and the upper surface of the transparent substrate are covered with the member reflective light such as TiO2, the light extraction efficiency decreases due to the absorption of light by the reflective member. Also, if a resin is applied to coat the electrical conductive member etc., the resin rises to the side surfaces of the transparent substrate and eventually all the side surfaces of the transparent substrate are covered with the resin. When the viscosity of the resin is adjusted to not rise, it is necessary that the content of the light-reflecting material be increased to a higher viscosity, so that it becomes difficult to cover the entire surfaces of the conductive members. In addition, in the case where the reflective member is arranged not to cover the side surfaces of the semiconductor layer and in the case where the light transmitting member includes a fluorescent material, the fluorescent material accommodates and the semiconductor is collected in the fluorescent material. Consequently, the excitation and emission ratio at the bottom of the fluorescent material layer increases, so that light is absorbed by the fluorescent material as it travels through the thick layer of the fluorescent material, resulting in a decrease in the efficiency of light extraction.
[00029] The present invention is designed to solve the problems as described above, and aims to provide a light emitting device capable of efficiently extracting light from the light emitting element outside, and a method of manufacturing it. The present invention also aims to provide a light-emitting device with high reliability and a method of manufacturing it, in which the electrical conductive members etc., on the base member are covered with a reflective member, for example, an insulating filler, which enables to suppress the deterioration of the members that make up the light-emitting device and the absorption of light by these members, and a part of the side surfaces and the upper surface of the transparent substrate of the light-emitting element are exposed. In this way, the light from the light-emitting element can be drawn out efficiently. Means to Solve Problems
[00030] In order to solve the above problems, a light-emitting device according to the present invention includes a light-emitting element that has a semiconductor layer and a transparent substrate, a reflective member that exposes at least a part of side surfaces and a top surface of the transparent substrate that covers lateral surfaces of the semiconductor layer; and a light transmitting member covering a part of the transparent substrate exposed from the reflective member.
[00031] With such construction, at least part of the lateral surfaces and the upper surface of the transparent substrate are exposed, which enables to suppress the absorption of light by the reflective member and thus enables to prevent the reduction in the efficiency of light extraction .
[00032] A light-emitting device according to the present invention may additionally have a base member and electrical conductive members arranged on the base member. The light-emitting element is mounted on the electrical conductive members, and on the surface of the electrical conductive members, at least a part that does not have the light-emitting element mounted on them is covered with an insulating pad which is the reflective member, and the light transmitting member covers the light emitting element. in the specification, the term "a part where the light-emitting element is mounted" refers to a part outside the contour of the light-emitting element in view from the top side surface of the light-emitting device. In other words, in view of the top side surface, the part behind the light-emitting element is not necessarily covered with the insulating filler. However, the part behind the light-emitting element can be covered with the insulating pad.
[00033] According to the construction as described above, the surface of the electrical conductive members formed on the base member is covered with the insulating filler. In this way, the efficiency of light reflection on the electrical conductive member is improved. The surface of the electrically conductive members is also covered with insulating padding. Therefore, a specific member that has a high reflectance is not necessarily used for the electrically conductive member and a stable member resistant to deterioration and corrosion can be employed. In addition, the surface of the electrically conductive members is covered with the filler, so that even a part of the electrically conductive members becomes deteriorated or corroded, reducing the light extraction efficiency of the light emitting device can be avoided.
[00034] A light-emitting device according to the present invention can have a construction in which, the base member has a recess, the electrically conductive members are arranged on the bottom surface and the lateral surface of the recess, and the emitting element light is mounted on the bottom surface of the recess. Additionally, the side surfaces of the recess in a part that touches the edge surface of the top of the recess preferably have a region where an electrical conductive member is not formed, and the side surfaces of the recess in a part that touches the bottom surface of the recess. preferably they have a region where an electrical conductive member is not formed.
[00035] Additionally, it is preferable that on the edge surface on the top side of the recess, the side surfaces of the recess have a step, and a side surface of the step has a region where an electrical conductive member is not formed. In addition, the shortest distance between a higher surface from the bottom surface of the step to a surface of the light transmitting member is preferably 1/5 or less with respect to the height of the recess, and the surface of the light transmitting member preferably has a lowered shape. In addition, the filler is preferably applied to a thickness of 5 µm or greater.
[00036] In the light emitting device, the reflectance of the filler is preferably 50% or greater for light of an emission wavelength. With the construction as described above, the light extraction efficiency of the light emitting device is improved.
[00037] It is preferable that in the light-emitting device, the filler covers the surface of the light-emitting element, and the surface area of a single light-emitting element that is covered with the filler is less than 50% of the entire surface of the single light-emitting element.
[00038] With the construction as described above, the proportion of the emission of the light emitting element that is blocked by the filling is low, so that the decline in the optical output power of the light emitting element can be avoided.
[00039] Additionally, it is preferable that in the light-emitting device, the electrically conductive members have respectively a positive electrode and a negative electrode, the electrodes are arranged apart from each other on the base member, and the filling is applied covering at least one part between the electrodes.
[00040] With the construction as described above, the filling is applied to the groove (groove) in the conductive part created between the electrodes, so that leakage of the light from the bottom of the base member through the groove (groove) in the part conductive. With this arrangement, the efficiency of light extraction can be further improved.
[00041] The distance between the electrodes, which is the width of the groove (groove) in the electrical conductive part is preferably 200 pm or less. The width of the groove (groove) in the conductive part of 200 pm or less facilitates the covering of the groove part with the filling.
[00042] In the light-emitting device, the light-emitting element is preferably mounted in the manner of mounting the direct connection insert. With the construction as described above, a wireless light-emitting element can be employed, so that the optical absorption by the conducting wires can be eliminated and the emission can be extracted efficiently from the side of the light extraction surface. Also, the periphery and bottom of the light-emitting element that is mounted in a direct connection insert way are covered with the filler, so that the light from the light-emitting surface side of the light-emitting element can be extracted out efficiently.
[00043] It is preferable that a protective element is mounted on the light-emitting device and an area of 50% or greater of the surface of the protective element is covered with the filler. With the construction as described above, optical absorption by the protective element can be avoided.
[00044] At least part of the filling is preferably covered with a light blocking member. With this arrangement, the light from the light-emitting element is reflected by the filler and the light-blocking member, so that the efficiency of light extraction can be improved.
[00045] The light blocking member preferably covers the side walls of the base member. With the construction as described above, the light from the light emitting element is reflected by the light blocking member and the efficiency of light extraction can be improved.
[00046] The light transmitting member preferably covers the filling in addition to the light emitting element. With the construction as described above, the filling surface can be protected.
[00047] A light-emitting device according to an aspect of the present invention includes a base member, electrical conductive members arranged on the base member, a light-emitting element mounted on the electrical conductive members, a wire that electrically connects each part of electrode of the electrically conductive members with respective electrode terminals of the light emitting element, an insulating filler that covers the electrical conductive part that does not have the light emitting element mounted on it and the lower surface of the wires, and a light transmitting member which covers the light-emitting element and the filling.
[00048] According to the construction as described above, the bottom surface of the wires is covered with the filler, so that the amount of light that is emitted from the light-emitting element directly on the wires and can be reduced by the wires. In particular, the lower surfaces of the wires are in positions directly irradiated with the light from the light-emitting element, so that the formation of filler on the lower surfaces of the wires allows efficient light absorption by the wires.
[00049] The gaps between the filling are preferably impregnated with a light transmitting member. With the construction as described above, the adhesion between the filler and the light transmitting member can be improved. The light transmitting member is configured so that the light from the light emitting element transmits through it and is drawn out, and also that it seals the light emitting element, thus it can be called a sealing member . In the case where the light emitting device has a light blocking member, the gaps between the filler are impregnated with the light blocking member, so that the adhesion between the filler and the light blocking member can be improved.
[00050] Additionally, in the region covered with the filler, the filler is preferably contained in more than 50 percent of the volume with respect to the volume of the impregnated light transmitting member.
[00051] A light-emitting device according to an aspect of the present invention includes a light-emitting element having a semiconductor layer and a positive electrode and a negative electrode respectively arranged on respective surfaces of the semiconductor layer, electrical conductive members each connected to the positive electrode and negative electrode respectively, a reflective member that covers the side surfaces of the positive and negative electrode and the side surfaces of the electrically conductive members, and a light transmitting member that covers an upper surface opposite to the respective surfaces that have the electrodes arranged on the same and lateral surfaces of the light-emitting element.
[00052] With the construction as described above, the reflective member is formed around the electrodes of the light-emitting element, so that a structure can be obtained that allows a small leakage of light in the downward direction. In this way, optical loss due to light entering under the light-emitting element can be reduced. The reflective member also reflects light that enters under the light-emitting element, so that the efficiency of light extraction can be improved.
[00053] In a light emitting device according to the present invention, the reflective member is preferably exposed on the side surfaces of the light emitting device. With the structure as described above, absorption of light under the light-emitting element can be avoided.
[00054] In a light emitting device according to the present invention, the interface between the light transmitting member and the reflective member is located on the side of the side surface of the light emitting element. With the construction as described above, light can be extracted from the upper and side surfaces of the light-emitting element.
[00055] It is preferable that in a light-emitting device according to the present invention, the thickness of the upper surface of the light-emitting element to the upper surface of the light-transmitting member is approximately the same as the thickness of a lateral surface of the light-emitting element for a lateral surface of the light-transmitting member. With the construction as described above, a preferred optical distribution can be obtained in the near field. On the other hand, by forming the thickness of a lateral surface of the light-emitting element on a lateral surface of the light-transmitting member less than the thickness of the upper surface of the light-emitting element on the upper surface of the light-transmitting member, it can be obtained preferential optical distribution in the distant field. In this way, this construction can also be employed.
[00056] In the light emitting device according to the present invention, the light transmitting member preferably contains a wavelength converter member. According to the construction as described above, the light emitting device capable of emitting light having a desired wavelength can be obtained. The structure as described above also allows color selection before it is arranged on the mounting substrate, so that the performance ratio after mounting the light-emitting element is improved.
[00057] A method of manufacturing a light-emitting device according to the present invention includes a step of connecting the electrodes of a plurality of light-emitting elements to a support substrate, a step of forming a reflective member by less around the electrodes of the light-emitting elements using an electrolytic electroplating technique, an electroplating coating technique, or an electrostatic coating technique.
[00058] According to the procedure as described above, a reflective member is formed around the electrodes of the light-emitting elements so that the optical loss due to the light that travels down from the light-emitting elements can be reduced. In addition, the reflective member is easily formed for the electrical conductive parts that are exposed just before the stage of forming the reflective member.
[00059] A method of manufacturing a light-emitting device according to the present invention includes a step of forming the electrical conductive members into a base member which is a supporting substrate, a step of mounting a light-emitting element on the electrical conductive members by micro-welding, apply an insulating filler, which is a reflective member, to cover part of a surface of the electrical conductive members where the light-emitting element is not disposed, using an electrolytic galvanizing technique, an electroplating technique, or an electrostatic coating technique, and a step of covering the light-emitting element with a light-transmitting member.
[00060] According to the method of manufacturing a light-emitting device, a light-emitting device capable of exerting a predetermined effect as described above can be provided.
[00061] It is preferable that the base member has a recess, electrical conductive members are formed on the bottom surface and on a lateral surface of the recess, and a light-emitting element is mounted on the bottom surface of the recess. In addition, the filler is preferably applied to a thickness of 5 µm or greater.
[00062] It is preferable that after micro-welding the method additionally includes a wire connection step that electrically connects a part of the conductive member, which serves as an electrode, and an electrode terminal of the light emitting element using a wire, and in step of applying a filler, the filler is applied to cover a lower part of the threads. Also, a step of covering the filling with a light blocking member is preferably included. [00063] A method of manufacturing a light-emitting device according to another aspect of the present invention can include a step of arranging a light-transmitting member on the reflective member to cover a side surface and an upper surface of the light-emitting element, and a step of dividing the light-emitting element into individual units which includes removing the support substrate and dividing the reflective member and light transmitting member.
[00064] Also, in a method of manufacturing a light emitting device according to an aspect of the present invention, it is preferable that, in the step of arranging the light transmitting member, the light transmitting member is impregnated in the reflective member. With the arrangement as described above, the reflective member can be fixed efficiently.
[00065] In a method of manufacturing a light emitting device according to an aspect of the present invention, the light transmitting member preferably contains a wavelength converter member. With the arrangement described above, at the time of separating the light-emitting elements individually, the thickness of the light-transmitting member that contains a wavelength-covering member can be adjusted so that a light-emitting device that has less color irregularity. Effects of the Invention
[00066] As the light-emitting device according to the present invention, light absorption due to conductive parts such as the electrical conductive member can be suppressed, so that the light from the light-emitting element can be efficiently extracted , allowing higher output. In addition, according to the light-emitting device according to the present invention, light leakage from the bottom surface of the base member can be prevented by coating the groove in the conductive part with the filling, so that the light from the emitting element of light can be extracted more efficiently and thus higher optical output power can be obtained.
[00067] In the light emitting device described above, the insulating filler capable of reflecting light is applied so that the efficiency of light extraction can be improved without using a specific material that has a high reflectance for the electrical conductive member. In addition, the insulating filler is formed with a greater thickness, so that discoloration and corrosion of the electrical conductive member can be suppressed. With this arrangement as described above, reliability can be improved.
[00068] Additionally, with the light-emitting device according to the present invention, the reflective member is formed around the electrodes of the light-emitting element, so that a structure can be obtained that allows small light leakage in the direction to low. In this way, the optical loss due to the light that enters under the light emitting element can be reduced. The reflective member also reflects light that enters under the light-emitting element, so that the efficiency of light extraction can be improved.
[00069] According to a method of manufacturing a light-emitting device in accordance with the present invention, a high-output and high-reliability light-emitting device can be manufactured. According to a method of manufacturing a light-emitting device according to the present invention, a reflective member is formed around the electrodes of the light-emitting elements so that the optical loss due to the light that spreads to the light can be reduced. below the light-emitting elements. The reflective member also reflects light that enters under the light-emitting element, so that the efficiency of light extraction can be improved. Brief Description of Drawings
[00070] Figure 1 (a) is a perspective view of the transmitting part of an example of a light emitting device according to a first embodiment of the present invention, and figure 1 (b) is a plan view of a transmissive part, seen from the side of the light emitting surface of the light emitting device shown in figure 1 (a).
[00071] Figure 2 (a) is a sectional view of the light emitting device, taken along the arrow line X2-X2 in figure 1 (b), and figure 2 (b) is a schematic diagram of a light-emitting element of the light-emitting device shown in figure 1.
[00072] Figures 3 (a) and 3 (b) are sectional views that illustrate steps for manufacturing a light-emitting device according to the first embodiment of the present invention, and figures 3 (a) and 3 (b ) each correspond to the section view of the light emitting device, taken along the arrow line X2-X2 in figure 1 (b).
[00073] Figures 4 (a) and 4 (b) are sectional views that illustrate steps of manufacturing a light emitting device according to the first embodiment of the present invention. Figure 4 (a) corresponds to the section view of the light emitting device, taken along the line of arrow X2-X2 in figure 1 (b) and figure 4 (b) corresponds to the section view of the light emitting device , taken along the arrow line X1-X1 in figure 1 (b).
[00074] Figures 5 (a) and 5 (b) are sectional views that illustrate steps of manufacturing a light emitting device according to the first embodiment of the present invention. Figure 5 (a) corresponds to the section view of the light emitting device, taken along the line of arrow X2-X2 in figure 1 (b) and figure 5 (b) corresponds to the section view of the light emitting device , taken along the arrow line X3-X3 in figure 1 (b).
[00075] Figures 6 (a) and 6 (b) are sectional views that illustrate steps of manufacturing a light emitting device according to the first embodiment of the present invention. Figure 6 (a) corresponds to the section view of the light-emitting device, taken along the arrow line X1-X1 in figure 1 (b) and figure 6 (b) corresponds to the section view of the light-emitting device , taken along the arrow line X2-X2 in figure 1 (b).
[00076] Figure 7 (a) is a perspective view of the transmissive part of an example of a light emitting device according to a second embodiment of the present invention, and figure 7 (b) is a plan view of a transmissive part, seen from the light emitting surface side of the light emitting device shown in figure 7 (a).
[00077] Figure 8 (a) is a sectional view of the light emitting device, taken along the arrow line YY in figure 7 (b), and figure 8 (b) is a schematic diagram of an emitting element of the light emitting device shown in figure 7.
[00078] Figures 9 (a) and 9 (b) are sectional views that illustrate steps of manufacturing a light emitting device according to the second embodiment of the present invention, and figures 9 (a) and 9 (b ) each correspond to the section view of the light emitting device, taken along the line of arrow YY in figure 7 (b).
[00079] Figures 10 (a) and 10 (b) are sectional views that illustrate steps for manufacturing a light-emitting device according to the second embodiment of the present invention, and figures 10 (a) and 10 (b ) each correspond to the section view of the light emitting device, taken along the line of arrow YY in figure 7 (b).
[00080] Figures 11 (a) and 11 (b) are sectional views that illustrate steps for manufacturing a light-emitting device according to the second embodiment of the present invention, and figures 11 (a) and 11 (b ) each correspond to the section view of the light emitting device, taken along the line of arrow YY in figure 7 (b).
[00081] Figure 12 is a sectional view that illustrates a step of manufacturing a light-emitting device according to the second embodiment of the present invention, and corresponds to the sectional view of the light-emitting device, taken along the line arrow YY in figure 7 (b).
[00082] Figure 13 is a schematic perspective view of a light source device according to a second embodiment of the present invention.
[00083] Figure 14 (a) is a perspective view of the transmissive part of an example of a light emitting device according to a third embodiment of the present invention, and figure 14 (b) is a plan view of a transmissive part, seen from the light emitting surface side of the light emitting device shown in figure 14 (a).
[00084] Figure 15 (a) is a sectional view of the light emitting device, taken along the arrow line X2-X2 in figure 14 (b), and figure 15 (b) is a schematic diagram of a light-emitting element of the light-emitting device, taken along the line of arrow XIXI in figure 14 (b).
[00085] Figure 16 is a schematic perspective view of another example of a light emitting device in accordance with the third embodiment of the present invention.
[00086] Figures 17 (a) and 17 (b) are section views of yet another example of a light-emitting device according to a fourth embodiment of the present invention.
[00087] Figure 18 (a) is a perspective view of the transmissive part of an example of a light-emitting device according to a fourth embodiment of the present invention, and figure 18 (b) is a plan view of a transmissive part, seen from the side of the light-emitting surface of the light-emitting device shown in figure 18 (a).
[00088] Figure 19 is a sectional view of the light emitting device, taken along the arrow line Y-Y in figure 18 (b).
[00089] Figure 20 is a schematic cross-sectional view showing a semiconductor device according to a fifth embodiment of the present invention.
[00090] Figure 21 is a diagram that illustrates a step of manufacturing a light emitting device according to the fifth embodiment of the present invention.
[00091] Figures 22 (a) and 22 (b) are diagrams that illustrate a step of manufacturing a light-emitting device according to the fifth embodiment of the present invention.
[00092] Figures 23 (a) and 23 (b) are diagrams that illustrate a step of manufacturing a light emitting device according to the fifth embodiment of the present invention.
[00093] Figures 24 (a) and 24 (b) are diagrams that illustrate a stage of manufacturing a light emitting device according to the fifth embodiment of the present invention.
[00094] Figures 25 (a) and 25 (b) are schematic cross-sectional views showing a semiconductor device according to a sixth embodiment of the present invention.
[00095] Figure 26 is a schematic sectional view showing an example of a variant of the semiconductor device according to the fifth and sixth embodiments of the present invention.
[00096] Figures 27 (a) and 27 (b) are schematic cross-sectional views in which each shows another example of a variant of the semiconductor device according to the present invention.
[00097] Figures 28 (a) and 28 (b) are schematic cross-sectional views in which each shows another example of a variant of the semiconductor device according to the present invention.
[00098] Figures 29 (a) and 29 (b) are SEM (Electron Scanning Microscope) images in which each shows a partially enlarged image of cross-sectional example of deposition deposition, close to the bottom surface the recess of the light-emitting device.
[00099] Figure 30 is an SEM image according to a third modality.
[000100] Figures 31 (a) and 31 (b) are each partially enlarged image close to a side surface of the light emitting device shown in figure 30.
[000101] Figures 32 (a) and 32 (b) are SEM images according to other examples of variants. Detailed Description of the Modalities
[000102] Preferred embodiments of the support member and the light-emitting device according to the present invention will be described below with reference to the drawings. The sizes and arrangement relationships of members in each of the drawings are occasionally shown exaggerated for ease of explanation. In the description below, the same designations or reference numerals denote the same or similar members and duplicate descriptions will be properly omitted. In the fifth and sixth modalities and the examples of variants thereof, different reference numerals can be used for convenience.
[000103] First, provisions that include a base member will be described in the first to fourth modalities. In the first to fourth modes, a light-emitting device that has an FD element is indicated by reference numeral 100 (first and third modalities) and a light-emitting device that has an FU element is indicated by reference numeral 200 (the second and fourth modalities). First Mode
[000104] In a first embodiment, a light emitting device that uses an FD element will be described. First, a general construction of a light-emitting device will be described with a description of each component, then the material or the like of each member will be described. General Construction
[000105] As shown in figure 1 and figure 2, the light-emitting device 100 includes a light-emitting element 104 that has a semiconductor layer 11 and a transparent substrate (hereinafter can be referred to as a substrate) 10, a reflective member 114 applied so that at least part of a side surface and the upper surface of the transparent substrate 10 are exposed and a side surface of the semiconductor layer 11 is covered with it, and the light transmitting member 108 that covers the parts exposed limb 114.
[000106] In the present embodiment, as shown in figure 1 and figure 2, the light-emitting device 100 is a light-emitting device 100 that has at least one light-emitting element 104 (two are shown in the figures) mounted on the same, and primarily has a base member 101, electrical conductor members 102a, 102b arranged on base member 101, a light-emitting element 104 mounted on electrical conductor members 102a, 102b, a reflective member (in the embodiment, a filler is used insulation 114) that covers at least a part of the surfaces of the electrical conducting members 102a, 102b that do not have the light-emitting element mounted on them, and a light-transmitting member 108 that covers the light-emitting element 104. Additionally in the modality , a metal member 103 which is arranged on the electrically conductive members 102a and 102b on the base member 101, a protective member 105, and wires 106 are arranged. Base Member
[000107] The base member 101 serves to house and protect the electrical components such as the light-emitting element 104 and the protective element 105.
[000108] As shown in figure 2 (a), the base member 101 has a recess 109 that opens upwards, and with the recess 209a, the bottom surface 220a and the side surface 230a are formed. The electrically conductive members 102a, 102b are arranged on the bottom surface 120 of the recess 109.
[000109] For the material of the base member 101, an insulating member is preferable and a member that allows little light emitted from the light emitting element 104 and external light to pass through is preferred. Also, a material that has a certain degree of mechanical strength is preferable. Specific examples of the same include ceramics (AI2O3, AIN etc.,) and a resin such as a phenol resin, an epoxy resin, a polyimide resin, a BT resin (bismaleimide triazine resin), and a polyphthalamide (PPA) . In the case where a resin is used for the material of the base member 101, inorganic fillers such as glass fiber, SiO2, THOO2, AI2O3 can be mixed in the resin to improve mechanical strength, decrease the coefficient of thermal expansion, and improve optical reflectance. Electrical Conductor Member
[000110] The electrical conductive members 102a, 102b are for electrically connecting the external and electronic components such as the light emitting element 104 and the protective element 105, and for supplying current (power) from an external source to those electronic components, and also the surfaces of the same are to be covered with the insulating filler. That is, the electrically conductive members serve as the electrodes or a part of them to supply electricity from outside.
[000111] As shown in figure 2 (a), the conductive members 102a, 102b are also arranged on the rear surface 140 of the base member 101 to be respectively electrically connected to the conductive members 102a, 102b (respectively to be a single member) electrically) on the base member 101. With this structure as described above, the electrically conductive members 102a, 102b are used as the electrode material to provide electricity and also serve as heat dissipating members. The electrically conductive members 102a, 102b can also be arranged respectively extended to a side surface (side wall) 130 in the recess 109 of the base member 101.
[000112] Additionally, in the present embodiment, the electrically conductive members 102a, 102b have a positive electrode or a negative electrode respectively, which are arranged on the base member 101 apart from each other, and at least a part between the electrodes is covered with The filling 114. That is, the electrically conductive members 102a, 102b are arranged separately on the base member 101 in a horizontal (laterally) manner with respect to the base member 101, so that the electrically conductive member 102a serves as a positive electrode (anode) and the electrically conductive member 102b serves as a negative electrode (cathode). With the arrangement as described above, a groove (groove) G is formed between the electrodes (between the electrically conductive members 102a and 102b). Next, the light-emitting element 104 is arranged to cover the electrical conductive members 102a and 102b.
[000113] At least one part between the electrodes (electrical conductive members 102a, 102b), that is, the groove (groove) G in the conductive part is preferably covered with filler 114 as will be described later (see figure 5 (b) ). With this arrangement, light leakage through groove G can be prevented. In the case where groove G is completely covered with filler 114, the downward movement of light through groove G can be prevented more effectively. It is further preferable that the groove G is completely covered with the filler and an 80% or greater part of the area in the light-emitting device irradiated with light that is different from the light-emitting element 104 is covered with the filler. The width of groove G is preferably 200 pm or less. The width of the G groove of 200 pm or less makes it easier to cover the groove part with the filler 114. It is more preferable than the width of the G groove of 100 pm or less makes it easier to cover the part of the groove with the filler. It is additionally preferable that the groove G is completely covered with the filling.
[000114] The lower limit is not limited, but in terms of preventing contact between the electrodes, 30 pm or greater is preferable. The filling 114 can extend and cover the groove G located under (below) the light emitting element 104. The groove G located under (below) the light emitting element 104 and the area between the connecting member 111 is covered with a light transmitting member 108 in addition to filler 114. Groove G may not be covered with filler 114 and may not be filled with light transmitting member 108. In addition, in the case where groove G is not covered with filler 114, groove G can be covered by applying a coating of a resin that blocks light.
[000115] The materials of the electrical conducting members 102a, 102b can be selected appropriately based on the material used for the base member 101 and the method of manufacturing the light emitting device 100. For example, in the case where ceramics are used for the material of the base member 101, the materials of the electrically conductive members 102a, 102b preferably have a high melting point to be able to withstand the cooking temperature of the ceramic sheets, and, for example, a metal having a high melting point such as tungsten and molybdenum.
[000116] In the case where an epoxy glass resin or the like is used for the material of the base member 101, it is preferable that the electrically conductive members 102a, 102b are made respectively of a material that is easy to process. In the case where an injection molded epoxy resin is used for the base member material 101, the electrically conductive members 102a, 102b are respectively made of a material that is easy to process by means of drilling, corrosion, bending, or the like, and also that it has relatively high mechanical strength. Examples of the same include a metal such as copper, aluminum, gold, silver, tungsten, iron, and nickel or a ferro-nickel alloy, a bronze phosphor, an iron containing copper and molybdenum. Metal Member
[000117] A metal member can be arranged to cover the surface of the electrically conductive member. In the present specification, the term "filler covering the surface of the electrical conductive members" includes the state in which the electrical conductive members are covered with a material filler which is disposed on a metal member disposed on the respective electrical conductive members. The metal member can be omitted.
[000118] Metal member 103 is used to cover the surfaces of electrical conductive members 102a, 102b to improve the efficiency of light reflection on electrical conductive members 102a, 102b. The metal member 103 can be omitted. The metal member 103 is not necessarily made of a material that has high reflectance and can be integrally arranged on the respective electrical conductive members 102a, 102b.
[000119] As shown in figure 2 (a), above the base member 101, that is, the metal member 103 is disposed in the respective electrical conductive members 102a, 102b on the bottom surface 120 of the recess 109. Also, as shown in figure 2 (a), the surfaces of the electrically conductive members 102a, 102b exposed on the rear surface 140 of the base member 101 can be respectively covered with the metal member 103. The metal member 103 is not necessarily displaced in the members electrical conductors 102a, 102b which are embedded in the base member 101.
[000120] The material of the metal member 103 is not specifically limited since the material can be plated, and, for example, silver alone can be used, or an alloy of silver and a metal that has high reflectance such as copper, gold , aluminum, or rhodium, or a multilayer film made with silver and the alloys described above. It is preferable to use gold alone, which has excellent thermal conductivity. The metal member 103 is preferably a thin sheet of metal with a thickness of approximately 0.05 pm to 50 pm, and in the case where the metal member 103 is formed with a multilayer, the total thickness is preferably in this range. For the method of forming metal member 103, a sputtering method, a vapor deposition method or the like can be employed, as well as a galvanizing method. Even without a use of silver which has excellent reflectance for the metal member 103, the insulating filler 114 with light reflectivity is used for the covering, so that deterioration in the light extraction efficiency can be avoided. Light Emitting Element
[000121] The light-emitting element 104 is an FD element that has standardized electrodes on a main surface, and is connected by the connecting member 111, mounted (in a direct connection insert assembly way) on the bottom surface 120 of the recess 109, and connected to electrical conductive members 102a, 102b through connecting member 111 and metal member 103.
[000122] The light-emitting element 104 has, as shown in figure 2 (b), a base member 10 and a semiconductor layer 11 stacked on the base member 10. The semiconductor layer 11 includes an n-type semiconductor layer, a layer active, and a p-type semiconductor layer stacked in that order. A type n electrode 16 is formed in the type n semiconductor layer and a type p electrode 14 is formed in the type p semiconductor layer. In the case of an FD element that is mounted in a downward mounting manner, the electrodes formed in the semiconductor layer 11 are attached to the conductive members 102a, 102b. For the method of assembling the light emitting element 104, assembly is employed with the use of a solder paste as the connecting member 111 as shown in figure 4 (a) or with the use of a projection made of a solder or the like . The semiconductor layer 11 of the light-emitting element 104 is, as shown in figure 2 (b), preferably covered with an insulating protective film 13. The light-emitting element 104, which is an FD element shown in figure 2 (b ), is further simplified in other figures.
[000123] For the light emitting element 104, a light emitting diode is preferably used, and an appropriate wavelength can be selected. For example, for the light emitting element 104 of blue color (wavelength range light from 430 nm to 490 nm) or green color (wavelength range light from 490 nm to 570 nm), ZnSe, can a nitride-based semiconductor (InxAlyGai-x-YN, 0 <X, 0 <Y, X + Y <1), GaP or similar be used. For the red light emitting element 104 (wavelength range light from 620 nm to 750 nm), GaA-IAs, AHnGaP, or the like can be used. In addition, a light-emitting semiconductor element made of a material other than that described above can also be used.
[000124] In the case where the light emitting device 100 employs a fluorescent material, a nitride semiconductor (InxAlyGai-x-YN, 0 <X, 0 <Y, X + Y <1) capable of emitting light of a length of small wave that can efficiently excite the fluorescent material is used properly. The emission wavelength of the light-emitting element can be selected variously by adjusting the materials and their mixed crystal of the semiconductor layer 11. The structure of the light-emitting element 104 can be selected from a structure in which both electrodes are arranged in the layer semiconductor 11 which is arranged on the base member 10, or a structure in which the electrodes are arranged in a top-down direction, on the upper surface of the semiconductor layer 11 and on the surface of the base member 10 respectively. A light-emitting element 104 made of a material other than the above can also be used. The composition, emission color, size, quantity, or the like, of the light emitting element 104 can be selected appropriately according to the purpose. In addition, a light-emitting element 104 capable of emitting ultraviolet light or infrared light, as well as a light-emitting element 104 capable of emitting visible light, can also be employed. Filling (Reflective Member)
[000125] The filler 114 is insulating and is used to cover the conductive parts of the light emitting device 100, and serves to prevent the deterioration of the efficiency of light extraction. The reflective member 114 is preferably a white filler, and preferably primarily made of an inorganic compound.
[000126] As shown in figure 2 (a), between the surfaces of the metal member 103 in the electrically conductive members 102a, 102b formed on the bottom surface 120 of the recess 109, the parts that do not have the light-emitting element 104 and the protective member 106 mounted on them are covered with filler 114. The region around the light-emitting element 104, the side surfaces of the connecting member 111, and the part exposed to the groove in the electrically conductive part are covered with filler 114 .
[000127] As described above, covering the electrical conductive members with filler 114 enables to suppress the absorption of light. The regions that are covered with the filler 114 are, on the side of the light extraction surface of the light emitting device 100, mainly the regions where the electrical conductive part (electrical conductive body) is exposed. It is preferable to cover at least 50% of the exposed part of the electrical conductive body. In addition, it is preferable that substantially the entire area of the exposed surface of the conductive body is covered. The parts covered with the insulating member do not allow treatments such as an electrodeposition coating to be described later, so that the filler 114 is hardly applied over them.
[000128] Furthermore, it is preferable that the protective element 105 and the electrical conductive wires 105 are covered with the filler 114. The electrical conductive members 102a, 102b that are exposed on the rear surface of the base member 101 are not covered with the filling 114.
[000129] In the light-emitting element 104, the semiconductor layer 11 is covered with the protective film (insulating film) 13. In the present invention, at least part of the side surfaces and the upper surface of the transparent substrate 10 are exposed, and the side surfaces of semiconductor layer 11 are covered with padding 114. That is, in this specification, all side surfaces of semiconductor layer 11 are covered with padding 114 and a portion of the side surfaces of base member 10 is covered with padding 114 , and another part of the side surfaces and the upper surface of the base member 10 are exposed from the filling 114.
[000130] At least part of the side surfaces and the upper surface of the base member 10 are exposed, so that the absorption of light by the filler (reflective member) 114 can be suppressed, and consequently, the deterioration of the extraction efficiency of light can be avoided. That is, at least a part of the side surfaces and the upper surface are exposed from the filling 114, so that the emission of the light-emitting element 104 is not blocked by the filling 114, and thus the deterioration of the output power of the light from the light-emitting element 104 can be avoided.
[000131] Also, if a resin is applied to the coating of the electrically conductive members 102a, 102b etc., the resin rises to the side surfaces of the base member 10 and eventually all the side surfaces of the base member are covered with the resin. In the case where the viscosity of the resin is adjusted to prevent the resin from rising, the amount of light-reflecting material contained is increased to increase the viscosity, which makes it difficult to finely cover the entire surfaces of the electrically conductive members. In the present invention, this resin is not used. In this way, the filler 114 can be applied to the electrically conductive members 102a, 102b, or the like, without covering all parts of the side surfaces of the base member 10. The side surfaces of the semiconductor layer 11 are covered with the filler 114, and from there so the efficiency of light extraction can be improved. In addition, in the case where the light transmitting member 108 contains a fluorescent material, it can be prevented that the semiconductor layer 11 is embedded in the precipitated fluorescent material. Therefore, absorption of light by the fluorescent material can be avoided and deterioration in the efficiency of light extraction can be avoided. Conversion of light by the fluorescent material on the light extraction side can be performed as far as possible, and this can also contribute to suppress the deterioration of the light extraction efficiency.
[000132] Electrodeposition coating and the like to be described later is not applicable to an insulating substrate such as a sapphire substrate. Therefore, the base member 10 is generally not covered with the filler 114 by means of electrodeposition coating and the like, but according to the amount of coating or the thickness of the filler 114, the surfaces (a part of the side surfaces of the base 10 (bottom of base member 10)) can be covered with filler 114. The semiconductor layer 11 that was not covered with protective film 13 is covered with filler 114. As shown in figure 8 (b), in case where a FU element is used for the light-emitting element 204 and where a connection layer 123, which is an electrical conductor, is arranged on a lower part (rear surface) of the base member 20, a part of the filler 114 also adheres to the bonding layer 123 on the back surface of the substrate 20.
[000133] For filler 114, a white filler additionally makes it easier to reflect light, so that the efficiency of light extraction can be improved. Also, for filler 114, an inorganic compound is preferably used. The term "white color", as used here, refers to the filling itself having a white color, or even in the case where the filling is transparent, the filling appears white when there is a difference in the refractive index between the filling and the materials around the filler.
[000134] Here, the reflectance of filler 114 is preferably 50% or greater, more preferably 70% or greater with respect to the light emitting wavelength. With the construction as described above, the light extraction efficiency of the light emitting device 100 can be improved.
[000135] Furthermore, the surface area of a single light-emitting element 104 that is covered with padding 114 is preferably less than 50% of the entire surface area of the single light-emitting element 104. With this arrangement, the the emission ratio of the light-emitting element 104 which is blocked by the filling 114 can be low, so that the deterioration of the optical output power of the light of the light-emitting element 104 can be avoided. In the case where a plurality of light emitting elements 104 are assembled, each of all light emitting elements has a surface area covered with padding 114 which is less than 50% of the entire surface area of a single emitting element of light 104. Also, the filler 114 preferably covers 50% or larger surface (exposed part) of the protective element 105. With this arrangement, the loss of light by absorption by the protective element 105 can be avoided.
[000136] Examples of the material contained in filler 114 made of an inorganic compound include an oxide such as SiO2, AI2O3, AI (OH) 3, MgCOs, TIOO, Zrθ2, Znθ2, Nb2θ5, MgO, Mg (OH) 2, SrO, ln2O3, Taθ2. HfO, SeO, and YnOs, a tai nitride like SiN, AIN, and AION, and a tai fluoride like MgF2. These can be used alone or as a mixture. These can be used in a stacked configuration.
[000137] The particle diameter of the filler 114 is preferably approximately 0 1 nm at 10 pm. Adjusting the particle diameter of the filler 114 in this range, which is the suitable particle diameter for coverage, facilitates the application of the filler 114. The particle diameter of the filler 114 is preferably 0 100 nm at 5 pm, additionally preferably 0 200 nm at 2 pm. The shape of the filler particles can be a spherical shape or a scale shape.
[000138] Here, in figures 29 (a), (b), as an example of the state where the filler is deposited, a partially enlarged SEM image of a cross-section is shown near the bottom surface 120 of the recess 109 of the light emitting device 100. In figure 29 (a), a scale is 2 pm, and in figure 29 (b), a scale is 0.2 pm.
[000139] In the images, the filler 114 (including a spherical shape and a scale shape) with a particle diameter of approximately 0 250 nm is deposited on the conductive member 102a (here, on the metal member 103, because the member of metal 103 is formed) using electrophoresis, and light transmitting member 108 is impregnated in filler 114. At this time, filler 114 is preferably contained in more than 50 volume%, additionally preferably more than 65 volume% with respect to the member light transmitter 108 which is impregnated in filler 114. From another point of view, when looking at the cross section in a part where the filler 114 has the light transmitting member 108 impregnated in it, the filler 114 is preferably exposed at 50% or more , more preferably 65% or more, in the cross-sectional area.
[000140] Here, in the case where the filler 114 is contained in a resin material and is applied to the coating, if more than 65% of the volume of the filler 114 with respect to the resin material is contained, the moldability decreases. Even in the case of 65% of the volume or less, the amount of resin is difficult to control, and in addition, properly disposing a predetermined amount of resin to a predetermined position is also difficult. However, according to the manufacturing method according to the present modality that will be described later, the filler 114 can be applied with high density while reducing the thickness. Light Transmitting Member
[000141] The light transmitting member 108 is to protect the light emitting element 104, the protective element 105, the wire 106, the filler 114, and the like, from dust, moisture, external force, or the like. As shown in figure 2 (a), the inner part of the recess 109 of the base member 101 is covered (closed) with the light transmitting member 108. Also, in order to improve the adhesion between the filler 114 and the transmitting member of light 108, the light transmitting member 108 is preferably impregnated between the filler particle 114 and the filler particle 114, that is, the gaps between the filler 114. In the case where the light-emitting element 104 is an FD element, and the periphery of the light emitting element 104 is covered with a light blocking member, the light transmitting member 108 can be omitted.
[000142] The material of the light transmitting member 108 preferably has a transparent property capable of allowing light from the light emitting element 104 to pass through it. Examples of such a material include a silicone resin, an epoxy resin, and a urea resin. In addition to these materials, a coloring agent, a light diffusing agent, a filler, a fluorescent material or the like can also be contained when necessary. The light transmitting member 108 can be made of a single member, or made of two or more of the plurality of layers. The filling quantity of the light transmitting member 108 is sufficient to cover the light emitting element 104 mounted on the recess of the base member 101, the protective element 105, the wires 106, or the like. In the case where the light transmitting member 108 functions as a lens, the surface of the light transmitting member 108 may be protruded to form a shell shape, a convex lens shape, or similar. Thread
[000143] Wires 106, 206 (see figure 8) are used to electrically connect the electrode terminals of the FU elements or the protective element 105 to the respective parts that serve as the electrodes of the electrically conductive members 102a, 102b arranged in the recess 109 of the base member 101. Examples of the wire material 106, 206 include a metal such as gold, copper, platinum, and aluminum, and an alloy thereof, but particularly, gold which has excellent thermal conductivity is preferably used. Protective Element
[000144] The protective element 105 serves as, for example, a Zener diode, and is arranged when necessary. As shown in figure 4 (b), the protective element 105 is mounted on the bottom surface 120 of the recess 109 through a connecting member 110, for example, an Ag paste, and connected to the electrical conducting member 102a through the metal (not shown) and metal member 103 which are arranged on the bottom surface of protective element 105. Additionally, a wire 106 is connected to the upper surface of protective element 105. Wire 106 is connected to electrical conductive member 102b through the metal member 103, and thus, protective element 105 and electrical conductive member 102b are electrically connected. Liaison Member
[000145] The connecting member (micro-welding member) 111 is for electrically connecting the electrodes of the light-emitting element 104 and the electrical conducting members 102a, 102b respectively, and also for connecting the light-emitting element 104 to the base member 101 For connecting member 111, an electrical conductive member is used. Examples of the material include an alloy containing Au, an alloy containing Ag, an alloy containing Pd, an alloy containing In, an alloy containing Pb-Pb, an alloy containing Au-Ga, an alloy containing Au-Sn, an alloy containing Sn, an alloy containing Au-Ge, an alloy containing Au-Sr, an alloy containing Al, an alloy containing Cu-ln, and a mixture of a metal and a flux.
[000146] In the case where the light-emitting device is mounted in a face-up mounting manner, an electrical conductive member is not necessarily used for the binding member 111, and an insulating resin (a resin composition can be used such as an epoxy resin, a resin, silicone or the like).
[000147] Also, the link member 111 can be used in a liquid, paste or solid form (in a sheet form, a brick form, or a powder form), which can be selected appropriately according to the composition, the shape of the base member 101, or the like. The connecting member 111 described above can be made up of a single member or a combination of some types of members. In addition, in the case where a transmissive link member, in particular, is used, a fluorescent member capable of absorbing light from the light-emitting semiconductor element and emitting light of different wavelength can be contained in the link member. Wavelength Converter Member
[000148] The light transmitting member 108 and / or a light blocking member 207 (see figure 8 (a)) may include a fluorescent member such as the wavelength converter member that absorbs at least part of the light emitted from the light-emitting element 104 and emits light of different wavelength.
[000149] A fluorescent member capable of converting light from a light-emitting element 104 into light of a longer wavelength has a greater efficiency. The fluorescent member may be formed from a single layer of a type of fluorescent material, etc., or a single layer of a mixture of two or more types of fluorescent materials, etc. Or, a stacked layer of two or more single layers containing one type of fluorescent material can be employed, or a stacked layer of two or more single layers each containing a mixture of two or more types of fluorescent materials, etc.
[000150] It is sufficient for the fluorescent member to be able to absorb the light from the light-emitting semiconductor element that has a nitride-based semiconductor as its semiconductor layer and emit light of different wavelengths. For example, a nitride-based fluorescent material or oxynitride-based fluorescent material, activated mainly with a lanthanoid element such as Eu, Ce can be used. More specifically, the fluorescent member is preferably at least one selected from the broadly grouped in (1) to (3) described below. (1) Fluorescent materials such as an alkaline earth halide fluorescent material, an alkaline earth halide metal halide fluorescent material, an alkaline earth metal aluminate fluorescent material, an alkaline earth earth sulphide fluorescent material, an alkaline earth earth sulphide fluorescent material , an alkaline earth nitride silicon fluorescent material, and a germinate each activated mainly with a lanthanoid element such as Eu and / or a transition metal element such as Mn; (2) Fluorescent materials such as a rare earth aluminate, a rare earth silicate, an alkaline earth rare earth silicate metal, each activated mainly with a lanthanoid element such as Ce; and (3) Fluorescent materials such as an organic asana compound or an organic complex each activated mainly with a lanthanoid element such as Eu.
[000151] Among these, as in (2), a fluorescent material based on YAG (Yttrium Aluminum Granada) which is a rare earth aluminate activated fluorescent material with a lanthanoid element such as Ce is preferable. YAG-based fluorescent materials are represented by the composition formulas such as in (21) to (24) shown below. (21) Y3AI50i2: Ce (22) (Yo, .8Gdo, 2) 3AlsOi2: Ce (23) Y3 (Alo, 8Gao, 2) 5Al50i2: Ce (24) (Y, Gd) 3 (AI, Ga) 50i2: Ce
[000152] In addition, for example, a part or all of Y can be replaced with Tb, Lu, or the like. Specifically, Tb3AlsOi2: Ce, Lu3AlsOi2: Ce, or the like can be used. In addition, a fluorescent material other than those described above can also be used, which has similar properties, performance, and effects. Light Emitting Device Manufacturing Method
[000153] A method of manufacturing the light emitting device according to the first embodiment of the present invention will be described below. In the present embodiment, a single light-emitting device is illustrated, but the base member is processed as an aggregate until divided into individual units in the final step, and thus the external side surfaces of the base member are created by the division.
[000154] Figures 3 to Figure 6 are sectional views that illustrate steps for manufacturing a light-emitting device according to the first embodiment of the present invention, and Figures 3 (a) and 3 (b) correspond each in section view of the light emitting device, taken along the arrow line X2-X2 in figure 1 (b). Figure 4 (a) corresponds to the section view of the light emitting device, taken along the line of arrow X2-X2 in figure 1 (b) and figure 4 (b) corresponds to the section view of the light emitting device , taken along the arrow line X1-X1 in figure 1 (b). Figure 5 (a) corresponds to the section view of the light emitting device, taken along the line of arrow X2-X2 in figure 1 (b) and figure 5 (b) corresponds to the section view of the light emitting device , taken along the arrow line X3-X3 in figure 1 (b). Figure 6 (a) corresponds to the section view of the light emitting device, taken along the line of arrow XIXI in figure 1 (b). Figure 6 (b) corresponds to the section view of the light emitting device, taken along the line of arrow X2-X2 in figure 1 (b). Figure 3 to Figure 6 show a sequence of manufacturing steps for a light emitting device 100, which are basically performed from Figure 3 (a) to Figure 6 (b). Here, figures 5 (a), (b), and figure 6 (a) illustrate a step of applying a filler and are carried out at approximately the same time.
[000155] A method of manufacturing a light-emitting device 100 according to the present invention includes a step of forming electrical conductive members, a micro-weld step, a step of applying a filler, and a step of forming a transmitting member of light. In the first embodiment, a metal member 103 and a protective element 105 are arranged, so that a step of forming a metal member, a step of connecting a protective element, and a step of connecting wires are included. Hereafter, each step will be described below. Step of Forming the Electric Conductive Member
[000156] As shown in figure 3 (a), the step of forming electrical conductive member is a step of forming electrical conductive members 102a, 102b into a base member 101. In the case where electrical conductive members 102a, 102b are to be formed on the rear surface 140 of the base member 101, they are formed in this step. That is, this step is a step for arranging the electrically conductive members 102a, 102b on the base member 101.
[000157] Electric conductive members 102a, 102b can be obtained by, for example, in the case where a base member 101 made of ceramic, a conductive paste is applied which contains fine particles of high melting metal such as tungsten or molybdenum in a predetermined pattern on the green ceramic sheet stage before cooking, then cooked. Alternatively, the electrically conductive members 102a, 102b can be formed on a ceramic plate that is already baked, using a technique, for example, such as vacuum vapor deposition, sputtering, or galvanizing.
[000158] The recess 109 of the base member can be formed by, for example, forming a hollow hole of various sizes in each corresponding green ceramic sheet and stacking them. In the case of the side surfaces 130 of the recess, the electrically conductive members 102a, 102b can be formed on the side surfaces 130 in the same way as on the bottom surface 120.
[000159] In the case where a base member 101 made of an epoxy glass resin is used, the electrically conductive members 102a, 102b can be formed by fixing a copper plate to a prepreg which is obtained by semi-hardening of fabric of one containing an epoxy resin or an epoxy resin, then standardizing the metal member such as copper in a predetermined form using a photolithographic technique. Metal Member Formation Stage
[000160] As shown in figure 3 (a), the step of forming a metal member is a step of forming a metal member 103, which allows connection, in the electrical conductive members 102a, 102b formed in the base member 101. In the case where the metal member 103 is also formed on the electrically conductive members 102a, 102b which are on the rear surface 140 of the base member 101, they are formed in this step. That is, in this step, the metal member 103 is disposed on the electrically conductive members 102a, 102b.
[000161] To arrange the metal member 103, a technique such as a galvanizing technique, a sputtering technique, a vapor deposition technique, or a technique of bonding a thin film can be used. When a galvanizing technique is employed, a technique such as electrolytic or non-electrolytic galvanizing can be used. For example, the most simplified technique is to perform electrolytic galvanization after electrically connecting the corresponding parts that are in the conductive members 102a, 102b. In the case where a non-electrolytic galvanizing technique, a sputtering technique, or a vapor deposition technique is employed, deposition can be obtained only on the electrically conductive members 102a, 102b using a photolithographic technique. Also, after arranging the metal member 103 on the electrically conductive members 102a, 102b that are not formed into a pattern, standardization can be performed on the electrically conductive members 102a, 102b and the metal member 103 to obtain a predetermined shape. In the case where wire connection is performed on the metal member 103 or where the electrodes of the light emitting element 104 are directly connected, it is necessary that the metal material such that the wire connection assembly or direct connection insert can be applied about them. But if those are not performed on the conductive members 102a, 102b, it is not necessary for the types of metal to be specifically limited. Micro-welding step
[000162] As shown in figure 4 (a), the micro-welding step is a step in which a light-emitting element 104 is mounted and connected to the base member 101 (in the conductive members 102a, 102b in the case where the metal 103 is not formed) after forming metal member 103.
[000163] The micro-welding step includes the step of mounting the light-emitting element in which a light-emitting element 104 is mounted on the base member 101 and the heating step in which, after the light-emitting element 104 is mounted, the element light emitter 104 is turned on by heating. Stage of Assembly of the Light Emitting Element
[000164] The step of assembling the light-emitting element is a step in which it is mounted on the base member 101, a light-emitting element 104, through a connecting member 111.0 connecting member 111 contains, for example, rosin ( pine resin) or a thermoactivated resin, and in addition, when necessary, a solvent for viscosity control, various additives, an activator such as an organic acid can be contained. In addition, a metal (for example, in a powder form) can be contained.
[000165] The light-emitting element 104 is connected with the electrically conductive members 102a, 102b (metal member 103) on the base member 101 via the connecting member 111. A flux can be applied in advance to the rear surface of the emitting element light 104.
[000166] Here, it is sufficient that the connecting member 111 is disposed between the electrical conducting members 102a, 102b and the light-emitting element 104 through the metal member 103. Therefore, of the parts in the electrical conducting members 102a, 102b, the connecting member 111 can be arranged in a region where the light emitting element 104 is mounted, or the connecting member 111 can be arranged on the side of the light emitting element 104. Or the connecting member 111 can be arranged in both. Now, the connection method of the light emitting element 104 will be described below.
[000167] Figure 4 (a) illustrates a state in which a resin composition (bonding member) 111 in liquid or paste form is disposed on the conductive members 102a, 102b. In the case where a connection member 111 in liquid or paste form is disposed on the electrically conductive members 102a, 102b, the technique can be appropriately selected from a filling technique, a printing technique, a transfer technique, or the like, according to viscosity. Then, the light-emitting element 104 is mounted to the part where the connecting member 111 is arranged. The electrodes are formed on the junction surface of the light-emitting element 104, and the electrodes and the electrically conductive members 102a, 102b are respectively electrically connected. In the case where a solid link member is used, after arranging the link member 111 in solid form, the light-emitting element 104 can be mounted on the electrical conductive members 102a, 102b in the same way as in the case where the link member bond 111 in liquid or paste form is used. This can be so that the binding member 111 in solid form or paste is temporarily melted by heating etc. so that the light-emitting element 104 is fixed in a desired position on the electrical conductive members 102a, 102b.
[000168] The amount of the resin composition is preferably adjusted so that after the light-emitting element 104 is connected, the connection area of the resin composition is approximately the same or greater than the connection area of the light-emitting element 104. In the case where a plurality of light-emitting elements are assembled using a resin composition in liquid or paste form, in order to prevent the light-emitting elements from moving from positions due to surface tension, each of the light-emitting elements light 104 is preferably connected via an individually supplied connecting member 111. The thickness of the connecting member is adjusted due to the appropriate thickness of the connecting member being different depending on the types of the connecting members, or in view of the case where the connecting member expands in the lateral direction by pressing on the light-emitting element assembly time, or the case where the connecting member follows irregular contour of the member base. Heating Step
[000169] The heating step is a step in which, after the light-emitting element 104 is positioned, the connecting member 111 is heated and the light-emitting element 104 is connected to the base member 101.
[000170] As shown in figure 10 (a), in the case where a FU element is used for the light emitting element, the connecting member 111 can be an insulating member, and heating is performed in the heating step at a higher temperature than the temperature at which at least a part of the connecting member 111 is volatilized. In the case where the bonding member 111 contains a thermosetting resin, heating to a temperature higher than the curing temperature is preferable. With this, the light emitting element 104 can be connected and fixed by the thermoactivated resin.
[000171] Also, for example, in the case where a rosin-containing resin composition and a low melting metal are used as the bonding member 111, and where the low melting metal is positioned in the conductive members 102a 102b (on metal member 103), heating to a temperature greater than melting of the low melting metal is preferable.
[000172] Here, particularly in the case where the connecting member 111 contains rosin and the metal is disposed on the side of the light-emitting element, for example, in the case where a metal film is formed on the sapphire plane of a semiconductor based on gallium in nitride element using a sapphire substrate, or in the case where a metal film is formed on the silicon plane of a semiconductor based on gallium in nitride element using a silicone substrate, due to the action of the rosin composition on the limb of heat bonding and the phenomenon of interdiffusion in the metallic metal bond between the electrical conductive members and the metal film can be formed while removing the insulating member. With this, the light-emitting element can be fixed more firmly and electrical continuity can also be achieved.
[000173] In the heating step, which follows heating, a washing step can additionally be performed. For example, in the case where a resin composition is used for bonding member 111, after removing a part of the resin composition by volatilization during heating, the residual resin composition can be removed by additionally washing or similar (residual bonding member washing step). Specifically, in the case where the resin composition contains rosin, the washing is preferably carried out after heating. For the washing solution, an organic solvent of ether glycol system or the like is preferably used. Protective Element Connection Step
[000174] As shown in figure 4 (a), in the connection step of the protective element, after forming the metal member 103 (after forming the electrical conductive members 102a, 102b, in the case where the metal member 103 is not formed) in base member 101, a protective element 105 is positioned and connected to the base member 101. That is, in the step of connecting the protective element, the protective element 105 is disposed in the electrical conductive member 102a through the metal member 103 and connected. Wire Connection Step
[000175] As shown in figure 4 (b), in the wire connection step, an electrode terminal the upper part of the protective element 105 and a part of the electrically conductive member 102b that serves as an electrode are connected with a wire 106. The technique for connecting wires 106 is not specifically limited and any techniques common in the art can be used. Filling Application Stage
[000176] As shown in figure 5 (a), in the filling application step, between the surfaces of the metal member 103 in the electrical conductive members 102a, 102b, the parts where the light-emitting element 104 is not arranged are covered with the filler 114 using an electrolytic galvanizing technique, an electroplating coating technique, or an electrostatic coating technique. With this step, after assembling the light-emitting element 104 using the connecting member 111, the exposed surfaces of the metal member 103 on the base member 101 (on the electrically conductive members 102a, 102b, in the case where the metal member 103 does not is formed) are covered with the filler 114. At this time, at least part of the side surfaces and the upper surface of the transparent substrate 10 are exposed, and the side surfaces of the semiconductor layer 11 are covered with the filler 114.
[000177] Also, as shown in figure 5 (b), in the filling application step, it is preferable to also cover the groove G between the electrodes (between the electrically conductive members 102a, 102b), and additionally, as shown in figure 6 (a), it is also preferable to cover the protective element 105 and the wires 106. To apply the filler 114, a deposition technique such as an electrolytic galvanizing technique, an electrostatic coating technique, or a coating technique may be used. electrodeposition.
[000178] The filling application step includes, for example, a step of positioning a light emitting device 100 in a solution containing filler and a step of depositing the filling on the light emitting device 100 using electrophoresis in the solution. In this technique of depositing filler, in a solution, an electrode is placed that is to be disposed opposite the light emitting device 100, and a voltage is applied to the electrode. Thus, using electrophoresis to electrically drive charged filler particles into the solution to deposit filler 114 on the parts where metal member 103 is exposed on electrical conductive members 102a, 102b. The thickness of the deposited filler 114 can be appropriately adjusted by the conditions and time of deposition, and is preferably at least 5 pm. Additionally, preferably the thickness is 10 pm or more. Using a material that has a high reflectance, a light reflective layer is formed by the deposited filler 114. After a step of forming the filler 114 using electrodeposition as described above, a different member of the filler 114 can be formed using electrodeposition.
[000179] For the electrolytic solution for electrodeposition, a mixed liquid is used in which the filling is dispersed. The material of the electrolytic solution is not specifically limited as long as it allows the electrically charged filler to move in the solution by electrostatic force. For example, acidic or alkaline capable of dissolving the filler, for example, nitric acid containing alkaline earth metal ion (such as Mg2 +) can be contained in the electrolytic solution. In the electrolytic solution, a metal alkoxide can be contained. More specifically, an organic material containing an element selected from Al, Sn, Si, Ti, Y, Pb, or an alkaline earth metal element, as its constituent element. For the material contained in the electrolytic solution, other than as described above, a mixed solution in which the filler is dispersed in a colloidal solution made with a metal alcoholate or a metal alkoxide and a mixed organic solution in a predetermined proportion, can be used as the electrolyte solution. Unlike the above, the electrolyte solution can be a mixed solution in which, acetone as an organic solvent, and colloidal aluminum solution and filler as an organic metal material, are contained in a solution whose base solution is isopropyl alcohol. In the present embodiment, the base member remains in an aggregate state until it is divided in the final step, the filler liner 114 can be applied at once in a plurality of light-emitting devices and thus leads to excellent mass productivity . Light Transmitting Member Arrangement Stage
[000180] As shown in figure 6 (b), in the light transmitting member arrangement step, a light transmitting member 108 is arranged on the base member 101 to cover the light transmitting element 104 with the light transmitting member 108 That is, the light transmitting member 108 to cover the light emitting element 104, the protective element 105, the wires 106, and the like, is applied in the step so that a molten resin is injected into the recess 109 of the light limb. base 101, then cured by applying heat or optical radiation.
[000181] One embodiment of the present invention is described above, but the present invention is not limited to the same, several changes can be made without departing from the scope of the invention. That is, the light-emitting device and the method of manufacturing the light-emitting device described above are understood as illustrative of a light-emitting device and a method of manufacturing the light-emitting device to present a concrete form for the technical ideas of the the present invention, and the scope of the present invention is not limited to the light-emitting device and the method of manufacturing the light-emitting device described above. In addition, it must be assessed that the members shown in the attached claims are not specifically limited to members in the modalities. In particular, the sizes, materials, shapes and disposition relationships of the members described in the preferred embodiments are given as an example and not as a limitation on the scope of the invention.
[000182] For example, in the above description, a light-emitting device that uses an FD element is mainly illustrated, but in the present invention, a light-emitting device that uses an FU element can also be made. The quantity of the light-emitting elements mounted on the light-emitting device is adjusted accordingly and a light-emitting device can include a plurality of three or more light-emitting elements. Hereinafter, it will be described as an example of a typical variant, a light-emitting device that uses an FU element and a method of manufacturing the light-emitting device as a second embodiment. Second Mode
[000183] A light emitting device that uses an FU element will be described in a second mode. Figure 13 shows a perspective view of an example of a light emitting device in accordance with the present embodiment. First, a general construction of a light emitting device with description of each component will be described, then the material or the like of each member will be described. In the following, the different points of the modality above the light emitting device 100 will be described mainly. General Construction
[000184] As shown in figure 7 and figure 8, a light-emitting device 200 is a device on which at least one light-emitting element 204 (two in the figures) is mounted, and mainly includes a base member 201, members electrical conductors 202a, 202b, 202c arranged on the base member 201, light-emitting element 204 mounted on respective parts of the electrical conductive members 202a, 202b, 202c, a wire 206 that connects a part of the electrical conductive member 202b, which serves as a electrode, with an electrode terminal of the light-emitting element 204, an insulating filler 114 that covers a metal member 103, which does not have the light-emitting element 204 mounted on it, and a lower surface of the wire 206, and a light transmitting member 108 covering light emitting element 204 and filling 114. In addition, in this case, a light blocking member 207 is arranged. Base Member
[000185] As shown in figure 8 (a), the base member 201 has a recess 209a that opens upwards, and additionally has recesses 209b, 209c in the recess 209a, and with the recess 209a, the bottom surface 220a is formed. and the side surface 230a. In addition, with the recesses 209b, 209c, the bottom surfaces 220b, 220c and the side surfaces 230b, 230c are formed respectively, and between the bottom surfaces 220b and 220c, a step is formed. Next, the electrically conductive member 202a, the electrically conductive member 202b, the electrically conductive member 202b, and the electrically conductive member 2209c, the electrically conductive member respectively are arranged on the bottom surface 220a of the recess 209a, 202c. Electrical Conductor Member
[000186] As shown in figure 8 (a), the electrically conductive members 202b, 202c are also arranged on the rear surface 240 of the base member 201 so that on the base member, they are respectively electrically connected to the electrically conductive members 202b , 202c (respectively to be a single member electrically) of the bottom surfaces 220b, 220c of the recesses 209b, 209c. Metal Member
[000187] As shown in figure 8 (a), in the base member 201, that is, in the electrical conductive members 202a, 202b, 202c of the bottom surfaces 220a, 220b, 220c of the recesses 209a, 209b, 209c, the member of metal 103 is arranged respectively. Also, as shown in figure 8 (a), the surface of the electrically conductive members 202a, 202b arranged on the rear surface 240 of the base member 201 can also be covered with the metal member 103. The metal member 103 is not disposed on the electrical conductive members 202b, 202c which are embedded in the base member 201. The metal member 103 can be integrally arranged in the electrical conductive members 202b, 202c, or the metal member 103 can be omitted. Light Emitting Element
[000188] The light-emitting element 204 is, as shown in figures 8 (a), 8 (b), a FU element that has electrodes on its upper surface, and on the lower surface of the light-emitting element 204, a bonding layer 123. Bonding layer 123 formed in the light emitting layer 204 is connected to bonding member 111 which is on a surface of electrical conductive member 202a, metal member 103, and bonding member 111 arranged therein. order on the bottom surface 220a of the recess 209a. Although, the connecting member 111 is not shown in the figures which illustrate a light emitting device 200 of the second embodiment.
[000189] As shown in figure 8 (b), the light-emitting element 204 has, a base member 20 and a semiconductor layer 21 stacked on the base member 20. Additionally, on the rear surface of the base member 20, it can be a pattern of Ag / Pt / AuSn (stacked in this order, from the left) with a pattern. Also, on one side of the semiconductor layer 21, an electrode n (electrode holder n) 25b which is an electrode terminal is arranged, and on the other side, an electrode holder p 25a which is an electrode terminal is arranged through the electrode 24. The electrode supports 25a, 25b are arranged on the same side of the semiconductor layer 21, and are electrically connected by wires 206 to the respective parts of the electrical conductive members 202b, 202c that serve as electrodes (see figure 7 (b)) . Then, the parts of the semiconductor layer 21 of the light-emitting element 204 are covered with the insulating protective film (insulating film) 23, except for the parts to connect to each of the electrode supports 25a, 25b with the respective wires 206. The light-emitting element 204, which is an FD element shown in figure 8 (b), is further simplified in other figures.
[000190] In the embodiment, the width of the bonding layer (the reflective layer 22a, the barrier layer 22b, and the adhesive layer 22c) is less than the width of the light-emitting element 204, that is, the width of the substrate 20. As described above, when the width of the bonding layer is less than the width of the substrate 20, the bonding layer is not cut in the step of dividing a chip into individual light-emitting elements, and therefore, the separation of the bonding layer in the split step can be avoided. The bonding layer 123, in the case where a FU element is used for the light emitting element, can be formed with a multilayer structure that includes a reflective layer 22a and a barrier layer 22b in addition to the adhesive layer 22c that connects the light-emitting element 204 to the base member 201.
[000191] The reflective layer 22a is a layer to reflect light emitted by the light-emitting element 204 into the substrate 20 and the semiconductor layer 21. With this arrangement, the light can be extracted outside the end surfaces of the light-emitting element 204 different from those with the reflective layer 22a formed on them. Specifically, a material such as Ag, Al, Rh, Pt, or Pd is preferably used. For example, with an use of Ag or an Ag alloy, an element that has high reflectance and good light extraction can be obtained.
[000192] Barrier layer 22b is layered to prevent diffusion of other materials, particularly the material of adhesive layer 22c. Specifically, a material that has a high melting point such as W, Mo, or such as Pt, Ni, Rh, Au is preferably used.
[000193] Adhesive layer 22c is for adhering the light-emitting element 204 to the base member 201. Examples of its material include an In alloy, Pb-Pd system, Au-Ga system, Au alloy system with Ge , Si, In, Zn, or Sn, Al alloy system with Zn, Ge, Mg, Si, or IN, Cu alloy system with Ge or In, Ag-Ge system, and Cu-ln system. A preferred example of this includes a eutectic alloy film such as an alloy whose main components are Au and Sn, an alloy whose main components are Au and Si, and an alloy whose main components are Au and Ge. Among these, AuSn is specifically preferable. Filling
[000194] As shown in figure 8 (a), of the surfaces of the metal member 103 in the electrical conductive members 202a, 202b, 202c respectively arranged on the respective bottom surfaces 220a, 220b, 220c of the recesses 209a, 209b, 209c, the parts where a light-emitting element 204 is not assembled are covered with filler 114. Additionally, filler 114 covers the entire surface, such as the areas peripheral to the light-emitting elements and the side surfaces of the connecting layer 123 under the emitting elements of light, as well as the bottom surface of the wires 206. That is, of the parts of the electrical conductive members 202a, 202b, 202c, unlike the regions where the light-emitting elements 204 are mounted, are covered with the filler 114. Light Transmitting Member
[000195] As shown in figure 8 (a), the inner part of the recess 209a of the base member 201 is closed with the light transmitting member 108. Although the light transmitting member 108 is not arranged in the parts where the light blocking member light 207 is recessed, in the case where the light blocking member is not disposed, the light transmitting member 108 is disposed in those parts (recesses 209b, 209c). The light transmitting member 108 can be arranged when necessary. Light Blocking Member
[000196] The light blocking member 207 is preferably a member capable of reflecting light, and embedded in the recesses 209b, 209c of the base member 201 to cover the exposed parts of the base member 201 that are exposed on the side surfaces 230a, 230b, 230c of recesses 209b, 209c. The exposed parts (side surfaces 230a, 230b, 230c) of the base member 201 can become a source of loss of optical transmission that causes optical loss while allowing light to pass through them. Therefore, arranging the light blocking member 207 that has a light reflection function in those parts enables to prevent loss due to light transmission and absorption. As described above, the side walls of the base member 201 and at least part of the filler 114 are preferably covered with the light blocking member 207. With this arrangement, the light from the light-emitting elements 204 is reflected by the light blocking member 207, and in this way the efficiency of light extraction can be improved. The light blocking member 207 is not limited to that described in the present embodiment, and can be used in the light emitting devices according to the first embodiment.
[000197] As shown in figure 8 (a), inside the recesses 209b and 209c of the base member 201, the light blocking member 207 is embedded. The light blocking member 207 is preferably arranged so that the recesses 209b , 209c are fully recessed, and additionally it is preferably arranged so that the exposed parts of the side surfaces 230a are entirely covered.
[000198] The light blocking member 207 is a member capable of efficiently reflecting light emitted from the light emitting element 204 and preferably made of an insulating material that absorbs little light and has high resistance against light and heat. Examples of this material include a silicone resin, an epoxy resin, and a urea resin. In addition to these materials, a coloring agent, a light diffusing agent, a light reflecting material, a filler, a fluorescent material or the like can also be contained when necessary. The light blocking member 207 can be made of a single member, or made of two or more of the plurality of layers.
[000199] With the light-emitting device 200 described above, while the light-emitting device 200 is in operation, between light from the light-emitting element 204 that spreads in all directions, light is extracted that spreads upward outward above the light-emitting device 200. Light that spreads downwards or laterally is reflected on the bottom surfaces 220a, 220b, 220c or on the side surfaces 230a, 230b, 230c of the recesses 209a, 209b, 209c of the base member 201, or on the light blocking members 207, and extracted outside above the light emitting device 200. At this time, due to the filling 114 being applied to the metal members 103 in the electrical conductive members 202a, 202b, 202c and in the conductive part (conducting body) of the wires 206 and the like, the absorption of light by those parts can be suppressed and the light can also be reflected by the filling 114. In this way, the light from the light-emitting element 204 can be extracted efficiently. Light Emitting Device Manufacturing Method
[000200] In the following, a method of manufacturing a light-emitting device according to the second embodiment of the present invention will be described with reference to the attached drawings. In the present embodiment, a single light-emitting device is illustrated, but the base member is processed as an aggregate until it is divided into individual units in the final step, and thus the external side surfaces of the base member are created by the division.
[000201] Figures 9 to 12 are sectional views illustrating manufacturing steps of a light emitting device 200, and correspond to the sectional view of the light emitting device, taken along the arrow line YY in figure 7 (b) . Figure 9 to Figure 12 illustrate a sequence of steps for manufacturing a light-emitting device 200, and basically, the fabrication is performed in the sequence of Figure 9 (a) to Figure 12.
[000202] A method of manufacturing a light-emitting device 200 according to the present invention includes a step of forming the electrical conductive member, a micro-welding step, a filling application step, and a step of forming the transmitting member of light. In the second embodiment, an FU element is used, so that a wire connection step is included. Also, in the second embodiment, a light blocking member 207 is arranged, so that a stage of forming a light blocking member is included. Hereafter, each step will be described below. Electrical Conductor Member Formation Stage
[000203] As shown in figure 9 (a), the step of forming the electrical conductive member is a step of forming the electrical conducting members 202a, 202b, 202c on the base member 201. In the case where the electrical conducting members 202b, 202c are formed on the rear surface 240 of the base member 201, they are formed in this step. That is, in this step, the electrically conductive members 202a, 202b, 202c are disposed in the base member 201. Those different as described above are performed in the same way as in the first embodiment. Metal Member Formation Stage
[000204] As shown in figure 9 (a), the step of forming the metal member is a step of forming the metal member 103, which allows the connection to the electrical conductive members 202a, 202b, 202c formed in the base member 201. In the case where the electrically conductive members 202b, 202c are also formed on the rear surface 240 of the base member 201, they are formed in this step. That is, in this step, the metal member 103 is disposed on the surfaces of the electrical conductive members 202a, 202b, 202c. Those other than as described above are performed in the same way as in the first modality. Micro-welding step
[000205] As shown in figure 10 (a), the micro-welding step is a step of assembling a light-emitting element 204, in the micro-welding step, a light-emitting element 104 is assembled and connected to the base member 201 (in the conductive members 202a) which has the metal member 103 formed thereon. That is, in this step, the light-emitting element 204 is assembled and connected through the connecting member 111 on the bottom surface 220a of the recess 209a of the base member 201. Those other than as described above are performed in the same way as in the first modality. Wire Connection Step
[000206] As shown in figure 10 (b), the wire connection step includes, using a wire 206, which electrically connects a part in the electrical conductive member 202b that serves as an electrode and an electrode terminal (electrode support) in an upper part of the light-emitting element 204. Likewise, the step includes using a wire 206, which electrically connects an electrode terminal (electrode support) to an upper part of the light-emitting element 204 and a part in the limb electrical conductor 202c that serves as an electrode (not shown). Those other than as described above are performed in the same way as in the first modality. Filling Application Stage
[000207] As shown in figure 11 (a), the filling application step includes, applying a filler 114 between the surfaces of the metal member 103 on the electrical conductive members 202a, 202b, 202c, to cover the parts where the emitting element of light 204 is not disposed, using an electrolytic galvanizing technique, an electroplating coating technique, or an electrostatic coating technique. In this step, after the light-emitting elements 204 are connected, the surfaces of the metal member 103 respectively formed in the electrical conductive members 202a, 202b, 202c, and electrical conductive parts of the other members are covered with the filler 114. Also, the surfaces such as the electrically conductive parts of the light-emitting elements 204 and the lower surface of the wires 206 are preferably covered with filler 114. Those other than as described above are performed in the same manner as in the first embodiment. Stage of Light Blocking Member Formation
[000208] As shown in figure 11 (b), a light blocking member formation step includes forming a light blocking member 207 in the recess 209b, 209c of the base member 201 to cover the filler 114. This step is to cover the exposed parts of the base member 201 which are exposed on the side surfaces 230a, 230b, 230c of the recesses 209b, 209c with the light blocking member 207. In addition, the light blocking member can be formed to cover entire exposed parts of the surface side 230a of recess 209. Covering those regions with the light blocking member 207 allows, as described above, to prevent optical loss caused by the passage of light from the exposed parts of the base member 201. The light blocking member 207 can be omitted accordingly with the configuration or combination of other members. A resin is preferably used for this light blocking member 207, and can be formed using a potting technique, a printing technique, or the like. Stage of Formation of the Light Transmitting Member
[000209] As shown in figure 12, in the deformation step of the light transmitting member includes forming a light transmitting member 108 in the base member 201 and covering the light emitting elements 204 with the light transmitting member 108. That is, in this step, the light transmitting member 108 to cover the light emitting elements 204, wires 206, or the like, is formed in the recess 209a of the base member 201 and cured. The step of forming the light transmitting member is carried out in the same manner as described in the first embodiment except that, in the case where a light blocking member (for example, a resin capable of reflecting light of an emission wavelength) 207 is formed, the light transmitting member 108 is formed in the recess 209a of the base member 201 after the light blocking member 207 is formed. Third Mode
[000210] A light emitting device that uses an FD element will be described in a third embodiment. First, a general construction of a light emitting device with description of each component will be described, then the material or the like of each member will be described. In the following, the different points of the above mode of the light emitting device 100 will be described mainly. General Construction
[000211] As shown in figure 14 and figure 15, the light emitting device 100 includes a light emitting element 104 that has a semiconductor layer 11 and a transparent substrate 10, a reflective member 114 applied so that at least a portion a side surface and the top surface of the transparent substrate 10 are exposed and a side surface of the semiconductor layer 11 is covered with it, and the light transmitting member 108 covering the exposed parts of the transparent substrate 10 from the reflective member 114.
[000212] In the present embodiment, as shown in figure 14 and figure 15, the light emitting device 100 has at least one light emitting element 104 (one is shown in the figures), and mainly equipped with a base member 101 that has a recess 109, electric conducting members 102a, 102b arranged on the bottom surface of recess 109, electric conducting member 102b arranged on the side surfaces of recess 109, a light-emitting element 104 mounted on the bottom surface of recess 109, a member reflective (in the modality, an insulating filler 114 is used) that covers at least part of the surfaces of the electrical conducting members 102a, 102b that do not have the light-emitting element mounted on them, and a light-transmitting member 108 that covers the light-emitting element 104. Additionally, in this case, a protective element 105 and a wire 106 are arranged. Base Member
[000213] As shown in figure 15 (a), the base member 101 has a recess 109 that opens upwards, and the bottom surface 120 and the side surface 130 are formed by the recess 109. The electrically conductive members 102a, 102b they are arranged on the bottom surface 120 of the recess 109, and the electrically conductive member 102b is disposed on the side surfaces of the recess 109.
[000214] Also, the light-emitting element 104, the conductive wire 106, and the like, are arranged in the recess 109. Consequently, the recess 109 must be of a size that allows the light-emitting element to be directly mounted using a micro-welding or the like, and which allows to establish the electrical connection with the light emitting element using such as wire connection, but the shape of the recess 109 is not specifically limited. Examples of the shape of the recess opening include, when viewed from the opening side, an approximately square shape and a circular shape. Also, the angle of the side surfaces 130 is not specifically limited. For example, the side surfaces can be tapered to a larger dimension towards the opening, they can have a paraboloid surface, or they can be configured approximately perpendicular to the bottom surface 120. Electrical Conductor Member
[000215] As shown in figure 15 (a), the electrical conductive member disposed on the side surfaces (side walls) 130 of the recess 109 can be such that one of the electrical conductive members 102a, 102b is extended to the side surfaces (walls 130 in recess 109, or another electrically conductive member is arranged. That is, the electrically conductive members 102a and 102b disposed on the bottom surface 120 are generally to function as electrodes, but the electrically conductive member disposed on the side surface 130 may not necessarily serve as an electrode.
[000216] The electrically conductive member 102a is arranged in an island shape on the bottom surface 120 of the base member 101, and the electrically conductive member 102b is arranged so that the peripheral part of the electrically conductive member 120a and the side surfaces 130 are covered continuously. That is, in the light emitting device according to the present embodiment, the electrical conducting member 102b disposed on the side surfaces 102b has negative polarity.
[000217] According to the light-emitting device of the present invention, the electrical conductive member is disposed on the side surfaces 130 of the recess 109, so that using a technique such as electroplating coating, the filler 114 can be disposed on the side surfaces. of the recess 109 evenly and with a high density. Also, placing the electrically conductive member on the side surfaces enables to prevent light from leaking out of the side surfaces of the recess. Filling
[000218] In addition, the filler 114 is also arranged on the surface of the electrically conductive members 102b arranged on the side surfaces 130 of the recess 109. The exposed parts of the semiconductor layer 11 of the light-emitting element 104 and the side surfaces of the connecting member 111 , and the groove (G) of the groove in the conductive part are covered with filler 114.
[000219] As shown in figure 15 (a), in the case where the electrically conductive member 102b is arranged for the top edge part of the side surfaces 130 of the recess 109, using the electroplating coating technique that will be described later, the filler 114 can be arranged to cover the electrical conductive members 102b that are exposed on the upper surface of the base member. In addition, when the light transmitting member 108 is filled, the light transmitting member is impregnated in the filler 114 located on the upper surface of the base material. The filler 114 and the light transmitting member 108 bulged out on the top surface as described can be left as is, or the upper surface of the base member 101 can be polished so that the light transmitting member 108 and the filler 114 do not. are bulged out of the higher surface of the base member 101. Also, as shown in figure 15 (b), as described in the first embodiment, the protective element 105 is also covered with the filler 114. Light Emitting Device Manufacturing Method
[000220] Next, a method of manufacturing the light emitting device according to a third embodiment of the present invention will be described. A method of manufacturing a light-emitting device 100 according to the present invention includes a step of forming the electrically conductive member, a micro-welding step, a filling application step, and a forming step of the light transmitting member. In the first embodiment, the metal member 103 and the protective element 105 are arranged, so that a metal member forming step, a protective element bonding step, and a wire bonding step are included. In the following, the different points of the manufacturing method of the first modality will be described mainly.
[000221] In this embodiment, an electrically conductive member is disposed on the bottom surface and on the side surfaces of the recess and the light-emitting element 104 is mounted on the bottom surface of the recess. In the step of forming the metal member, a technique such as galvanizing technique, sputtering technique, vapor deposition technique, or a technique of bonding a thin film can be used. Also, in the filling application step, between the surfaces of the electrically conductive members 102a, 102b, the parts that do not have the light-emitting element 104 mounted, including the side surfaces 130 of the recess 109, are covered with the filling 114. Those other than as described above are executed in the same way as in the first modality, their description will be omitted below.
[000222] Next, SEM images of the light emitting device 100 of the third modality will be shown in figure 30, in figure 31. Figures 31 (a), 31 (b) are partially enlarged views of the areas indicated as a1, a2 in figure 30, respectively. Here, figure 30 is a secondary electron image and figure 31 is an electron reflection image. As shown in figure 30, figure 31, at least part of the side surfaces and the upper surface of the transparent substrate 10 are exposed, and the side surfaces of the semiconductor layer 11 are covered with the reflective member (filler) 114. In the image , "KT" indicates a fluorescent material. Fourth Mode
[000223] A light emitting device that uses an FU element will be described in a fourth modality. Figure 18 (a) shows a perspective view of an example of a light emitting device in accordance with the present embodiment. First, a general construction of a light-emitting device will be described with a description of each component, then the material or the like of each member will be described. In the following, the different points of the light emitting device mode 200 above will be described mainly. Although, metal member 103 and connecting member 111 are not shown in the figures illustrating a light emitting device 200 of the fourth embodiment. General Construction
[000224] As shown in figure 18 and figure 19, a light-emitting device 200 is a device on which at least one light-emitting element 204 (two in the figures) is mounted, and mainly includes a base member 201, members electrical conductors 202a, 202b, 202c which are arranged on the base member 201, light-emitting elements 204 mounted on respective parts of the electrical conductive members 202a, 202b, 202c, a wire 206 that connects a part of the electrical conductive member 202, which serves as an electrode, with an electrode terminal of the light-emitting element 204, insulating filler 114 that covers the electrical conductive members that do not have the light-emitting element 204 mounted on them, and a lower surface of the wire 206, and a member light transmitter 108 covering light emitting element 204 and filling 114. Base Member
[000225] As shown in figure 19, the base member 201 has a recess 209 that opens upwards, and the bottom surface 220 and the side surface 230 are formed by the recess 209. The electrically conductive member 202a, the electrically conductive member 202b, and the electrically conductive member 202c are arranged on the bottom surface 220 of the recess 209. Also, the electrically conductive member 202d is disposed on the side surfaces 230 of the recess 209. Electrical Conductor Member
[000226] As shown in figure 19, the conductive members 202a, 202b are also arranged on the rear surface of the base member 201 to be respectively electrically connected to the conductive members 202a, 202b (respectively to be a single member electrically) on the member base 202. In addition, the electrically conductive member 202c does not serve as an electrode, and is removed from the bottom surface 220 and covers the side surfaces of the recess 209. Filling
[000227] As shown in figure 19, between the surfaces of the metal member in the electrical conductive members 202a, 202b, 202c arranged on the bottom surface 220 of the recess 209, the parts that do not have the light-emitting element 204 mounted on them are covered with padding 114. In addition, electrical conductive member 202d disposed on side surfaces 230 of recess 209 is also covered with padding 114. Additionally, padding 114 covers the entire surface of wire 206, and also covers the peripheral region of the light-emitting elements 204 and also the side surfaces of the connecting layer 123 under the light-emitting elements 204. That is, the parts of the electrical conducting members 202a, 202b, 202c, different from the regions where the light-emitting elements 204 are assembled, are covered with filler 114. Light Emitting Device Manufacturing Method
[000228] In the following, a method of manufacturing the light-emitting device according to a fourth embodiment of the present invention will be described. A method of manufacturing a light-emitting device 200 according to the present invention includes a step of forming electrical conductive members, a micro-weld step, a step of applying filler coating, and a step of forming a transmitting member of light. In the fourth embodiment, an FU element is used, so that a wire connection step is included. In the following, The different points of the manufacturing method of the second modality will be described mainly.
[000229] In the stage of forming an electrical conductive member, the conductive members 202a, 202b, 202c, and 202d are formed in the base member 201. In the stage of forming a metal member, the metal member is formed in the electrical conductive members 202a, 202b, and 202c on the base member 201. In the case where the metal member is also formed on the electrical conductive members 202a, 202b which are on the rear surface 240 of the base member 201, they are formed in this step . In the micro-welding step, the light-emitting element 204 is mounted through the connecting member 111 on the metal member on the bottom surface 220 of the recess 209 of the base member 201. In the wire connecting step, a part of the member electrical conductor 202a that serves as an electrode and an electrode terminal (electrode holder) at an upper part of the light-emitting element 204 are electrically connected by a wire 206. Likewise, in this step, the electrode terminal (electrode holder) electrode) on the light-emitting element 204 and a part on the electrically conductive members 202b, 202c that serve as electrodes are respectively electrically connected by wires 206.
[000230] In the step of applying the filler coating, between the surfaces on the electrical conductive members 202a, 202b, 202c, 202d, the parts that do not have the light-emitting element 204 mounted on them are covered with filler 114. According to this step, after the light-emitting element 204 is switched on, the surfaces of the electrically conductive members 202a, 202b, 202c, 202d, and the conductive parts of other members are covered with filler 114. Also, surfaces such as conductive parts of the light-emitting elements 204 and the surface of the wire 206 are preferably covered with the filler 114. Also, it may be so that the surfaces of the electrical conductive members are covered with the metal member and the filler cover 114 is applied to them. Those other than as described above are executed in the same way as in the first modality and in the second modality, their description will be omitted below. Other Examples of Variants of the Third and Fourth Modalities
[000231] As an example of other examples of variants of the third and fourth embodiments, a construction will be described below, wherein, the upper end part of the recess of the base member has a region in which an electrically conductive member is not disposed. For example, in the third embodiment and in the fourth embodiment, examples are described in which the electrically conductive member is disposed on the entire side surfaces of the recesses 109, 209, but the electrically conductive member may not be disposed on a part of the lateral surfaces 130, 230 recesses.
[000232] Particularly, on the side surfaces of the recess, a part that touches the top edge surface of recesses 109, 209 preferably has a region in which the electrically conductive member is not disposed. With this arrangement, in the time of this electrodeposition coating, deposition of the filling on the upper surface of the base member 101, 201 can be avoided, so that it can be prevented from becoming a cause of height irregularity. In the case where the filling is arranged on the upper surface of the base member 101, 201, at the time of filling of the light transmitting member 108 in the recess, the light transmitting member can be impregnated in the filling, which can result in the resin bulging out on the upper surface of the base member. In particular, a resin that has adhesion properties such as a silicone resin can cause problems where, for example, light-emitting devices come together, or external substances can be attached to the domed resin on the upper surface of the base member during manufacturing steps. Therefore, it is preferable that the resin is not disposed on the upper surface of the base member.
[000233] Additionally, it is preferable that on the edge surface of the top side of the recess, a step is formed on the side surface of the recess 130, 230 and the side surface of the step has a region where the electrical conductive member is not formed. In the following, an example will be described in which a step is placed in the third modality.
[000234] In the light emitting device 100 of figure 16, on the edge surface of the top side of the recess 109, a step 150 is formed on the side surfaces 130 of the recess 109, and the side surfaces 160 of the step 150 have a region where the electrically conductive member 102b is not formed. As described above, the electrical conductive member is formed on the bottom surface 170 of the steps while a region is formed where the electrical conductive member is not formed on the upper end portions of the recess 109. In this way, the filler cover can also be applied close to the upper end portion of the recess 109. The padding to cover the electrically conductive member is arranged in step 150, and in this way it can be prevented that the padding 114 and the light transmitting member 108 protrude from the upper surface of the base 101.
[000235] At this point, the shortest distance between the bottom surface 170 of the step and the surface of the light transmitting member 180 is preferably 1/5 or less with respect to the height of the recess 109. If the distance between the bottom surface 170 of the step and the edge surface of the top of the recess 109 is large, the region where the electrical conductive member is not formed increases. Here, padding 114 is not formed in the region where the electrical conductive member is not formed, so that the light radiated on the side surface 160 of the step is absorbed into the base member 101. Particularly, an electrical conductive member that has a low reflectance such as tungsten is typically used for the interface between the electrical conductive member and the base member in terms of adhesion, so that the light that leaks into the base member reflects diffusely on the base member and is absorbed on the member electrical conductor that has a low reflectance.
[000236] For this reason, the side surface 160 of the step is arranged so that the minimum of light is radiated over it. The light propagates in the light transmitting member 180, so that in the recess 109, from the part where the light-emitting element 104 is mounted to the part on the side surface 160 of the step is formed narrower to narrow the light path. With this arrangement, even if the amount of filled light transmitting member is increased, light leakage can be reduced to a minimum. Here, as shown in figure 16, the shortest distance K1 between the bottom surface 170 of the step and the surface of the light transmitting member 180 is 1/5 or less with respect to the height K3 of the recess 109. With this arrangement, it is little light is allowed to spread out. Here, on the bottom surface 170 of the step, a distance K2 is determined which is the thickness of the electrically conductive member 102b (in some cases, additionally with a metal member) plus the deposition thickness of the filler 114. The smaller the K1 -K2, less light spreads outside, so it is preferable, and K1 = K2 is more preferable. In addition, K2 is preferably determined so that it is not larger than the upper surface. Also, the surface of the light transmitting member 108 preferably has a recessed shape. With the recessed shape, the upper surface of the resin will not become higher than the upper surface of the base member 101 or 201, so problems such as joining the light emitting devices with one another can be avoided.
[000237] In figure 17 (a), the shape of the electrical conductive member of the light-emitting device shown in figure 16 is changed, and other parts are the same as in figure 16. In the light-emitting device 100, an electrical conductive member it is arranged on a part of the bottom surface of the step 150. In other words, the bottom surface of the step has a region where the upper surface of the electrical conductive member is exposed, and a region where the electrical conductive member is not exposed. Additionally, through the connecting member 111, the light-emitting element 104 is mounted in a transposed manner on the electrical conductive members 102a and 102b formed on the bottom surface of the recess. Additionally, on the side surfaces of the recess, the electrically conductive member 102c is formed to be separated from the electrically conductive members 102a, 102b on the bottom surface. The electrically conductive member on the side surfaces can be formed using any technique, for example, using a metallization technique.
[000238] Also in figure 17 (a), the shape of the electrical conductive members of the light-emitting device shown in figure 16 is changed, and other parts are the same as in figure 16. In the light-emitting device 100, a conducting member electrical conductor is not formed below the electrical conductive member 102d formed on the side surfaces, so that electrical insulation can be maintained with respect to the electrical conductive members formed on the bottom surface of the recess. For example, a base material made from simultaneously fired ceramics can be used. Other Examples of Variants
[000239] For example, base members 101, 201 having a recess 109 or recesses 209, 209a, 209b, 209c are illustrated, but in other examples of variants, a planar base member that does not have recess 109 or recesses 209, 209a, 209b, 209c can be used. In this case, it is sufficient that the light transmitting member 108 is deposited on the upper surface of the planar base member. In addition, in this case, a configuration can be employed in which the light transmitting member 108 is not arranged.
[000240] In the first and third embodiments, a protective element 105 is provided, but in the second and fourth embodiments, a construction that has a protective element can be employed, and additionally, in the first and fourth embodiments, a protective element such as like a Zener diode. In addition, in the first to fourth embodiments, constructions having one or two light-emitting elements 104, 104 (204, 204) being arranged, but respectively, three or more of the light-emitting elements can be arranged. Also, in the case where two or more of the plurality of light-emitting elements are provided for a single light-emitting device, each of the light-emitting elements may have a different emission wavelength. For example, a light-emitting device can have three light-emitting elements respectively emitting the three primary colors of RGB.
[000241] In the light emitting device 200, the width of the connecting layer 123 (reflective layer 22a, barrier layer 22b, and the adhesion layer 22c) disposed on the underside side of the light emitting element 204 is less than the width of the light-emitting element 204, however, the present invention is not limited to this. For example, the width of the connecting layer 123 disposed on the lower surface side of the light-emitting element 204 and the width of the light-emitting element 204 can be modified thereon. This facilitates covering the side surfaces of the connecting layer 123 with the filler 114.
[000242] Additionally, the light emitting device 100 (200), according to the modalities described above, has a light emitting element 104 (204) capable of emitting light from the visible region, but a construction that has a light-emitting element capable of emitting ultraviolet light or infrared light. Additionally, in the present embodiment, the light transmitting member 108 is filled to cover (seal) the entire recess, but the light transmitting member 108 can be applied to cover each single light emitting element 104 (204) or to cover a plurality of light-emitting elements at once.
[000243] In the method of manufacturing the light-emitting device, to carry out the present invention, a step different from those described above may be included between, before, or after each step in a way that does not adversely affect each step . For example, other steps such as a step of washing the base member in which the base member 101 or 201 is washed, a step of removing unwanted substances such as dust, and a step of adjusting the mounting position where the The mounting position of the light emitting element 104, 204 or protective element 105 is adjusted. The examples of variants described above can be used appropriately according to the fifth and sixth modalities that will be described later and their examples of variants.
[000244] In the following, as those modalities that do not use the base member, the fifth and sixth modalities will be described and then examples of variants according to the fifth and sixth modalities will be described. The light emitting device according to those modalities will be indicated by reference numerals 100A to 300A. In the following, the different points regarding the first to fourth modalities will be described mainly. Fifth Mode
[000245] Figure 20 is a schematic sectional view showing a light-emitting device according to a fifth embodiment of the present invention. Light Emitting Device Manufacturing Structure
[000246] In the present embodiment, a light-emitting device 100A includes a light-emitting element 104A having electrodes 104c arranged on the surface of the semiconductor layer 104b, electrical conductive members 102 respectively connected to corresponding electrodes 104c of the light-emitting element 104A, a reflective member 114 that covers the peripheral parts of the electrodes 104c of the light-emitting element 104A and the electrical conductive members 102, and a light-transmitting member 108 that covers an upper surface that is opposite the surface where the electrodes 104c are arranged, and the side surfaces of the light-emitting element 104A.
[000247] The light-emitting element 104A includes a semiconductor layer 104b formed on a main surface of a transparent substrate 104a that has a pair of main surfaces on opposite sides. In addition, the positive electrode and negative electrode (hereinafter referred to as electrodes) are formed on the surface of the semiconductor layer 104b. In the light emitting device 100A of the present invention, the light emitting element 104A is arranged so that the side of the transparent substrate 104a, which is the side opposite the electrode forming surface. More specifically, in the light emitting element 100A shown in figure 20, the upper surface of the transparent substrate 104a serves as the upper surface of the light emitting element 104A. On the lower surface of the transparent substrate 104a, the semiconductor layer 104b which includes a first semiconductor layer, an active layer, and a second semiconductor surface is stacked in that order. The negative electrode or the positive electrode are arranged in the first semiconductor layer or the second semiconductor layer, respectively. The electrodes 104c of the light-emitting element 100A are preferably formed with a metal with high reflectivity, and, for example, the electrodes containing Ag or Al are suitable. With this arrangement, the light from the light-emitting element 104A can be reflected on the electrodes 104c and extracted from the side of the transparent substrate 104a.
[000248] The electrical conductive members 102 are, for example, formed using galvanization, and adhered respectively to the positive or negative electrode of the light-emitting element 104A through an electrically conductive micro-welding member 111. The electrical conducting members 102 are respectively connected to the light-emitting element 104A and serve as the electrode terminals of the light-emitting device 100A. The lower surface of the electrical conductive members 102 is exposed to the outside and forms a part of the external surface of the light emitting device 100A.
[000249] The reflective member 114 has an insulating property and covers at least the lateral surfaces of the conductive parts such as the electrical conductive members 102 and micro-welding members 111. In the present embodiment, the reflective member 114 additionally covers the lateral surfaces of the electrodes 104c of the light emitting element 104A. Additionally, the reflective member 114 is arranged extended at the bottom to be exposed on the side surfaces of the light emitting device 100A.
[000250] The light transmitting member 108 is disposed on the light emitting element 104A and on the reflective member 114 which is disposed in the peripheral area of the light emitting element 104A. The light transmitting member 108 may contain a fluorescent material or the like. In the present embodiment, the light transmitting member 108 covers the top surface and side surfaces of the transparent substrate 104a and the side surfaces of the semiconductor layer 104b of the light emitting element 104A. The interface between the light transmitting member 108 and the reflective member 114 is arranged at approximately the same height or higher than the interface between electrodes 104c and semiconductor layers 104b.
[000251] As described above, in the light emitting device 100A according to the present embodiment, the side surfaces of the electrical conducting members 102 and the micro-welding members 111 are covered with the reflective member 114. With these provisions, it can be reduced to optical loss due to light from the light-emitting element 104a entering electrical conductive members 102 and micro-welding members 111. As shown in figure 20, it is preferable that approximately the entire surface of the lower surface of the light transmitting member 108 is covered with the reflective member 114. The light that travels down from the light-emitting element 104A is reflected by the reflective members 114 that have high reflectance or by the electrodes 104c, in this way the light can be extracted efficiently. Also, generally, in a light source using a light-emitting element and a wavelength converter member, the light-emitting element is mounted in a shell made of a ceramic or a resin, and then a wavelength converter member. But arranging the light-emitting device according to the present invention for several shells allows to select the color before the assembly of these shells, so that the performance after assembly increases. Light Emitting Device Manufacturing Method
[000252] A method of manufacturing a light-emitting device according to the present invention will be described below. Figures 21 to 24 are schematic cross-sectional views showing steps for manufacturing a light-emitting device in accordance with the present embodiment. A method of manufacturing a light-emitting device according to the present embodiment mainly includes a step (first step) of connecting electrodes 104c of a plurality of light-emitting elements 104A to a support substrate 101 and a step (second step) ) to arrange a reflective member 114 on the support substrate 101 at a height so that at least peripheral parts of the electrodes 104c of the light-emitting elements 104A are covered, using an electrolytic galvanizing technique, an electroplating coating technique, or a electrostatic coating technique. In addition, the present embodiment includes a step (third step) of forming a light transmitting member 108 on the reflective member 114 to cover an upper surface and side surfaces of the light-emitting elements 104A, and a step (fourth step) of removing the substrate support 101 and divide the reflective member 114 and the light transmitting member 108 to separate the light-emitting elements 104A individually. First step
[000253] First, the support substrate 101 is prepared. The support substrate 101 is a plate-shaped or leaf-shaped member and serves to hold the light emitting device in the steps of manufacturing the light emitting device according to the present embodiment. The support substrate 101 is removed before dividing the light-emitting devices individually, so that it is not included in the light-emitting device.
[000254] The support substrate 101 is preferably a substrate that has electrical conductivity. For support substrate 101, a single layer or stacked layers of metal or alloy can be used. The support substrate 101 can be formed with a stacked layer of resin and metal. Examples of the metal used for the support substrate 101 include SUS and Cu.
[000255] On the support substrate 101, a photosensitive resistance is fixed as a protective film. On top of it, a photomembrane that has a predetermined pattern is arranged directly or indirectly, and ultraviolet light is used to expose it. Then, photo-processing is performed to form a resistor that has a plurality of openings that are spaced apart from each other. In a case where the protective film (resistance) is formed using photolithography, the protective film (resistance) can be either positive or negative.
[000256] Next in the openings of the resistor, electrical conductive members 102 are selectively arranged. The electrically conductive members 102 are preferably formed with a thickness of 0.1 to 500 µm. The electrically conductive members 102 are preferably formed using an electrolytic technique. Galvanizing materials, stacked structure, conditions or the like can be appropriately adjusted using a technique known in the art. After the conductive members 102 are formed, the resistor, which is a protective film, is removed. In this way, electrical conductive members 102 which are spaced apart from one another are formed.
[000257] Next, in the respective electrical conductive members 102, the light-emitting elements 104A are respectively connected using a micro-welding member 111. Examples of the micro-welding member include a welding material such as Au-Sn, a metal protrusion such as like Au. The micro-welding member 111 can be formed interposed between the electrical conducting members 102 and the corresponding light-emitting element 104A. For this, the micro-welding member 111 can be arranged: (A) on the side of the electrical conductive member 102; (B) on the electrode side 104c of the light emitting element 104A; or (C) on both electrical conductive members 102 and on electrode 104c of the light-emitting element 104A.
[000258] Binding member 111 in a paste form or a solder (a sheet, a brick, or powder) can be used, and it can be appropriately selected according to the composition of the micro-welding member 111, the shape of the electrical conductive members 102, or the like.
[000259] Here, a connection method will be described in the case where the part where the micro-welding member 111 is to be formed is on the side of the electrical conductive member 102 as in (A) described above and a solder paste material is used as the micro-soldering member 111. First, in the electrically conductive members 102, a solder paste material 111 is disposed. The technique of disposing the solder material 111 can be appropriately selected from dispensing, printing, galvanizing, electro-coating, electrostatic coating , etc. Then, the electrodes 104c of the light emitting element 104A are adhered to the parts where the weld material 111 is disposed. Thereafter, the temperature is raised to where the weld material 111 melts and held for a given period of time, then lowered to room temperature. Then, flux or the like, remaining around the weld material 111 is washed away. Second stage
[000260] Next, a reflective insulating member 114 is arranged to cover the electrical conductive members 102 exposed in the first stage and the conductive part of the micro-welding member 111 etc. Figure 22 (b) shows a finished state of the second stage.
[000261] Covering the exposed parts of the electrically conductive members 102 and the conductive part of the micro-welding member 111 etc. with the reflective member 114, the optical loss caused by the light entering those parts can be reduced. Therefore, in the second stage, the reflective member 114 is preferably formed to cover the region of at least 40% of the area of the entire exposed area of the electrically conductive members. Additionally, among the exposed regions of the conductive parts at this stage, approximately the entire area is preferably covered with the reflective member 114. Here, the term "exposed region" refers to a region that is visible from the outside except for a region on the surface of the 104A light-emitting element where insulating protective film is applied. The reflective member 114 is preferably formed on the support substrate 101 for a height that covers the periphery of the electrodes 104c of the light-emitting element 104A. In the present embodiment, the reflective member 114 is formed to a height that covers the side surfaces of the semiconductor layer 104b of the light-emitting element 104A.
[000262] For the technique of forming filler 114, an electrolytic electroplating technique, an electrostatic coating technique, or an electroplating coating technique can be used. Using these techniques, for example, reflective member 114 can be deposited efficiently and selectively with respect to conductive parts such as electrical conductive members 102 and micro-weld members 102. Additionally, in order to secure reflective member 114, such a binder such as a resin or an inorganic material can be added or impregnated in the reflective member 114 which is disposed. Also, the light transmitting member 108, which is used in the third step that will be described later, can be impregnated in the reflective member 114. Third Stage
[000263] Next, the light transmitting member 108 to cover the light emitting element 104A is formed and cured. 23 (a) is a diagram illustrating the light transmitting member 108 being formed in the reflective member 114 and covering the light emitting element 104A. The light transmitting member 108 is preferably formed to a height that covers the upper surface and the side surfaces of the light emitting element 104A exposed from the reflective member 114. For the technique of forming the light transmitting member 108, potting , printing, compression molding, transfer molding, thermal spraying, electro-coating, casting, rotational coating, etc. can be used. The light transmitting member 108 formed in this way can be cured by heating or optical irradiation. The light transmitting member 108 can be made of a single member, or made of two or more of a plurality of layers.
[000264] In the case where the light transmitting member 108 is cured by heating, the time of raising or lowering the temperature, and atmosphere etc. can be appropriately selected. In the case where the light transmitting member 108 is cured by optical irradiation, the irradiation time and wavelength of the radiating light can be appropriately selected according to the materials to be used. The light transmitting member 108 can be cured using both heating and optical radiation.
[000265] Also, a coloring agent, a light diffusing agent, filler, a wavelength converter member (fluorescent member), or the like, can be contained in the light transmitting member 108. The thickness of the light transmitting member 108 can be adjusted by polishing etc., or a lens shape including a matrix or formation of microlenses with uneven surface etc., an optical function of controlling the optical alignment can be provided for the light transmitting member 108. Fourth Stage
[000266] After the third step, the support substrate 101 is removed. With this, the bottom surface of the electrical conductive members 102 is exposed. Fig. 23 (b) is a diagram illustrating a state in which the support substrate 101 is removed. For the technique of removing support substrate 101, physical removal or selective removal of support substrate 101 can be used with a use of corrosion, etc.
[000267] The cut sheet 112 is attached to the aggregate obtained from the light-emitting devices (Figure 24 (a)). Thereafter, in the parts of division 118 as shown in 24 (b), that is to say, cut in positions capable of dividing the reflective member 114 and the light transmitting member 108 between the light-emitting elements 104A, to obtain elements emitting from individual lights 104A, in this way to obtain the light emitting devices 100A as shown in figure 20. Several known methods can be employed to separate the individual devices, such as a cutting method using a blade and a cutting method using a beam laser. Figure 24 (b) illustrates a state where the light-emitting elements 104A are individually divided, but according to the purpose, division can be performed to obtain a matrix or an aggregate of a group of two or four light-emitting elements 104A .
[000268] Hereinafter, each construction member of the light-emitting device will be described in detail. Also, descriptions of similar parts as in the first to fourth modalities will be appropriately omitted. Light Emitting Element
[000269] The light-emitting elements used in the present modality are preferably made by stacking semiconductor materials on a transparent substrate and divided into individual tablets. For substrate materials for stacking nitride semiconductors, for example, an insulating substrate such as sapphire or spinel, or an electrically conductive substrate such as GaN, SiC, Si, ZnO or the like can be used preferably.
[000270] For the material suitable for the positive and negative electrodes, any material that has electrical conductivity can be used properly, for example, one of the metals between Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Ag, and Al, or an alloy thereof, or a combination thereof. Particularly, it is preferably contained Ag or Al, which have high reflectance. Forming the electrodes using a metal that has high reflectance allows the light blocked by the electrodes to be reflected and extracted from the side of the substrate, so that the light extraction efficiency of the light emitting device can be improved, and therefore preferable. Also, an insulating protective film can be formed substantially on the entire surfaces of the light-emitting element except for the electrode surfaces that serve as connecting regions with the electrical conductive members or the micro-welding members. For the protective film, SiO2, TiO2, AI2O3, a polyimide can be used.
[000271] The emission wavelength of the light emitting element can be selected varied according to the materials and the ratio of the mixed crystal content of the semiconductor layer. In the case where the light emitting device includes a light transmitting member containing a fluorescent material, the semiconductor used for the light emitting layer is preferably a nitride semiconductor (YGai-x-yN, 0 <X, 0 < Y, X + Y <1) capable of emitting short wavelength light.
[000272] A light-emitting element capable of emitting ultraviolet light or infrared light can also be employed as well as a light-emitting element capable of emitting visible light. In addition, a protective element such as a Zener diode or a light-receiving element or the like can be mounted with the light-emitting element. Electrical Conductor Member
[000273] The electrically conductive member is attached to the positive and negative electrodes of the light emitting element and serves as the electrodes of the light emitting element that are electrically connected to the respective external electrodes. In at least one electrically conductive member, the positive electrode of the light-emitting element is disposed directly or through the micro-welding member, etc. Also, in at least one electrically conductive member, the negative electrode of the light-emitting element is disposed directly or through the micro-welding member, etc.
[000274] In the case where a material easily separated from the support substrate or where the support substrate is removed using corrosion, it is necessary that the electrically conductive members are made of a material that has a selectivity for the solution and are arranged in one part which is in contact with the support substrate. More specifically, a noble metal such as Au, Pt, Rh, Ir, and Pd or an alloy thereof is preferable. In addition, a film of another metal can be formed on them. More specifically, Ni, Cu, Ag, Cr, W etc. can be used. The electrically conductive members preferably have a thickness of approximately 0.1 pm to 500 pm.
[000275] Each of the electrically conductive members has, for example, an upper surface on which the electrode of the light-emitting element is disposed, and a lower surface that forms an external surface of the light-emitting device. The upper surface of the electrical conductive members is larger than the area capable of arranging the electrode of the light-emitting element. The lower surface of the electrical conductive members is exposed outwards without being covered with the reflective member etc. The side surfaces of the electrically conductive members may be flat, or they may have tiny irregularities. Also, the side surfaces of the electrically conductive members can be shaped with a slope or curve on the side of the bottom surface. With this arrangement, the separation between the reflective member and the electrically conductive members can be avoided. Micro Welding Member
[000276] A micro-welding member is preferably used to adhere the electrical conductive members with the electrodes of the light-emitting element. Using a micro-welding member that has electrical conductivity allows the electrical conducting members and the light-emitting element to be electrically connected. Examples of the micro-welding member include a weld material such as Au-Sn, a metal protrusion such as Au. In particular, a material that has a high melting point such as Au-Sn is preferably used. The thickness of the micro-welding member is preferably approximately 0.5 pm to 500 pm. Reflective Member
[000277] The reflective member has an insulating property, and is arranged to cover mainly the lateral surfaces of the electrically conductive members. In the case where the electrically conductive members are adhered to the electrodes of the light-emitting element through a micro-welding member, the reflective member is preferably arranged to also cover the lateral surfaces of the micro-welding member. The reflective member serves to reflect the light emitted from the light emitting element or the light whose wavelength is converted by a wavelength converter member. In this way, the optical loss due to the light that enters the electrical conductive members can be reduced. The reflective member is preferably arranged to cover all around the electrodes of the light emitting element. Also on the lower surface of the light-emitting device, the reflective member is disposed in a part that does not have an electrically conductive member disposed on it. The provision of this reflective member enables to prevent light from the light-emitting element from leaking out from the bottom surface of the light-emitting device, so that the efficiency of light extraction in one direction from the top surface can be improved. The reflective member preferably has a reflectance of 50% or more with respect to light in the wavelength range from 430 nm to 490 nm (blue light). The filler having a particle size in the range of 10 nm to 10 pm is used preferably. Additionally, the thickness is preferably in the range of approximately 100 nm at 5 pm. With this arrangement, good light scattering can be obtained. Light Transmitting Member
[000278] The light transmitting member covers the upper surface and the lateral surfaces of the light emitting element. The interface between the light transmitting member and the reflective member is placed on the side element of the light emitter. The thickness of the upper surface of the light-emitting element for the upper surface of the light-transmitting member is preferably approximately the same as the thickness of the side surfaces of the light-emitting element for the side surfaces of the light-transmitting member. In this way, good optical distribution can be obtained in the near field, and uniform emission in several directions on the light-emitting surface of the light-emitting element can be obtained. Alternatively, the thickness of the side surfaces of the light-emitting element to the side surfaces of the light-transmitting member may be less than the thickness of the upper surface of the light-emitting element for the upper surface of the light-transmitting member. In this way, good optical distribution in the distant field can be obtained, and uniform emission in several directions on the light-emitting surface of the light-emitting element can be obtained. The light transmitting member preferably has a thickness of at least 10 pm. Additionally, the thickness is preferably in the range of approximately 30 pm to 300 pm. Sixth Mode
[000279] Figure 25 (a) is a schematic sectional view showing a light emitting device according to a sixth embodiment of the present invention. Repeated descriptions as in the fifth modality can be omitted.
[000280] In the present embodiment, the light-emitting device 200A includes a light-emitting element 204A that has electrodes arranged in the semiconductor layer 204b, electrical conducting members 102 respectively directly connected or through the micro-welding member 111a corresponding electrodes 204c of the element light emitter 204A, a reflective member 114 that covers peripheral parts of the electrodes 204c of the light emitting element 204A and the electrical conductive members 102, and a light transmitting member 108 that covers an upper surface that is opposite the surface where the electrodes 204c are arranged, and the side surfaces of the light-emitting element 204A. That is, the construction also includes a light-emitting element 204A that has a semiconductor layer 204b and a transparent substrate 204a, a reflective member 114 applied so that at least part of a side surface and the upper surface of the transparent substrate 204a are exposed and a side surface of the semiconductor layer 204A is covered with it, and the light transmitting member 108 that covers the exposed parts of the reflective member 114.
[000281] The reflective member 114 covers at least the side surfaces of the conductive parts such as the electrical conductive members 102 and micro-welding members 111. In the present embodiment, the reflective member 114 additionally covers the side surfaces of the electrodes 104c and the side surfaces of the semiconductor layer 204b of the light emitting element 104A. The light transmitting member 108 covers the upper surface and the lateral surfaces of the transparent substrate 204a of the light emitting element 204A. The interface between the light transmitting member 108 and the reflective member 114 is arranged at approximately the same height or greater than the interface between the semiconductor layer 204b and the transparent substrate 204a. The light that propagates in the semiconductor layer 204b is emitted through the transparent substrate 204a exposed from the reflective member 114.
[000282] As described above, the light emitting device 200A according to the present embodiment has the side surfaces of the electrical conducting members 102 and the micro-welding members 111 covered with the reflective member 114, so that the optical loss due to light of the light-emitting element 104A entering electrical conductive members 102 and micro-weld members 111 can be reduced. The light that propagates below the light-emitting element 204A is reflected by the reflective member 114 which has high reflectance or the electrode 204c, in this way the light can be extracted efficiently. Also, in the present embodiment, the reflective member 114 is formed to a height that covers the lateral surfaces of the semiconductor layer 204b, so that the light that propagates below the light-emitting element 204A can be reduced and thus the efficiency of light extraction can be improved.
[000283] In the above, the fifth and sixth modalities of the invention are described, it should be understood that the present invention is not limited to these, but can be materialized in a variety of ways for practice within the scope of the present invention. For example, the reflective member can directly cover the side surfaces of the light-emitting element, but in the case where an insulating protective film is applied to the side surfaces of the electrodes and in the semiconductor layer of the light-emitting element, the reflective member can cover indirectly the light-emitting element through the protective film.
[000284] Also, as shown in figure 25 (b), the upper surface of the reflective member 114 disposed around the light-emitting element 304A can be formed as an outward sloping or curved surface. The light-emitting device 300A according to the present variant example has the reflective member 114 which covers at least the side surfaces of the electrical conducting members 102 and micro-welding members 111.0 reflective member 114 can additionally cover the side surfaces of the electrodes 304c and layer semiconductor 304b of the light emitting element. The light transmitting member 108 covers the top surface and side surfaces of the transparent substrate 304a of the light emitting element 304A. The interface between the light transmitting member 108 and the reflective member 114 is formed with an inclined or curved surface that decreases with distance to the light emitting element 304A. As with the 300A light-emitting device shown in the variant example described above, arranging the upper surface of the reflective member 114 in a curved or angled shape out of the light-emitting device enables easy extraction of the light that is reflected in the transmitting member. light 108 and on the wavelength converter member and then proceeds towards the side of the reflective member 114 to the outside.
[000285] Also, in the light-emitting element, on the side of the surface where the electrodes are formed, the surfaces of the exposed semiconductor layer of the electrodes are preferably covered with the reflective member, but as shown in figure 26, at least part of the surfaces the semiconductor layer 404b exposed from the electrodes 404c can be exposed from the reflective member 114. In the light emitting device 400A of the variant example, the reflective member 114 is formed as a thin film covering the lateral surfaces of the conductive part such such as the electrically conductive members 102, the micro-weld member 111 and the electrodes 404c. By forming the reflective member 114 as a thin film as described above, light can be prevented from entering the electrical conductive members 102 and the micro-welding member 111 with the small amount of reflective member 114. On the bottom surface of the light emitting device 400A, a thin film of the reflective member 114 is preferably arranged in the part where the electrically conductive members 102 are not arranged. With this, it can be prevented that the light from the light-emitting element 404A leaks out from the bottom surface side of the light-emitting device 400A, so that the efficiency of light extraction in one direction from the upper surface can be improved.
[000286] Additionally, in the specification, the members shown in the appended claims are not specifically limited to members in the modalities. Unless otherwise indicated, the sizes, materials, shapes and disposition relationships of the members described in the modalities are presented as an example and not as a limitation on the scope of the invention. The sizes and arrangement relationships of members in each of the drawings are occasionally shown exaggerated for ease of explanation.
[000287] As described above, the present invention includes a modality in which a base member is employed, and a modality in which no base member is employed. In addition, for example, in the light emitting device of the fifth and sixth modes in which the base member is removed, the base member can be divided instead of being removed. For example, as shown in figures 27 (a), 27 (b), the light-emitting device 300B or 300C can be formed with the substrate 101a which is the base member or the substrate Si 101b that serves as a protective element can be used in addition to the construction of the 300A light emitting device (see figure 25 (b)). Examples of the material used for the base member (substrate 101a, substrate Si 101b) include, unlike an epoxy glass substrate, a phenol paper, a liquid crystal polymer, a polyimide resin, a BT resin, a Teflon ( trademark), silicone, alumina, aluminum nitride, silicone nitride, and an LTCC. Additionally, like Si, the base member can have an active element or a passive element function. Additionally, as shown in figures 28 (a), 28 (b), a Si 101b substrate is employed as the base member that is made within a conical substrate using anisotropic Si corrosion. With the substrate that has a trapezoidal shape like shown in figure 28 (a), the angle of light intensity distribution of the light emitted from the 300D light emitting device can be enlarged. Also, employing a reflector shape as shown in figure 28 (b) narrows the angle of light intensity distribution of the light emitted from the 300E light emitting device, and in this way the frontal luminosity can be improved, and the amount of light taken for within a secondary optical system can be increased.
[000288] In the following, SEM images of the light emitting device 300B are shown in figure 32. Figure 32 (b) is a partially enlarged view of the areas indicated as "a3" in figure 32 (a). As shown in figures 32 (a), 32 (b), at least part of the side surfaces and the upper surface of the transparent substrate 304a are exposed, and the side surfaces of the semiconductor layer 304b are covered with the reflective (filler) member 114 Here, the images shown above illustrate the states in which reflective member 114 is not in contact with electrode 304c and reflective member 114 is formed around electrodes 304c, but a state in which reflective member 114 is in contact with the 304c electrode can also be used. In the image, "KT" indicates a fluorescent material. Industrial Applicability
[000289] The light emitting device according to the present invention is capable of efficiently reflecting light from the light emitting element without the use of a reflective material which can be subject to corrosion and thus has excellent light extraction efficiency. Also, even in the case where a corrosive reflective material such as silver is used, the deterioration of the reflective material can be avoided, so that excellent light extraction efficiency can be obtained. The light-emitting devices according to the present invention can be used in applications such as various indicators, lighting apparatus, displays, backlight sources for liquid crystal displays, and in addition, facsimile image reading systems , copiers, scanners or the like, and projector devices. Meaning of Reference Numerals 10, 20, 104a, 204a, 304a, 404a ••• 11,21,104b, 204b, 304b, 404b ••• 13, 23 ••• 14 ... 16 - 22a »• reflective layer 22b »• barrier layer 22c» • connection layer 24 ••• electrode 25a, 25b ••• electrode support 100, 200, 100A, 200A, 300A, 400A »• light emitting device 101,201 ••• base member ( support substrate) 101a »* substrate (base member) 101b *» Si substrate (base member) 102,102a, 102b, 202a, 202b, 202c, 202d, 302,402 ••• member drive 103 »• electric tor metal 104, 104A, 204A, 304A, 404A »• light-emitting element 104c, 204c, 304c, 404c» • electrode 105 »• protective element 106, 206» • wire (conductive wire) 108 »• light transmitting member 118» * separation part 109, 209, 209a, 209b, 209c »• recess Ho connecting member for it rn, 203, 303, 403» • protective linking member (112 »member * micro-welding (welding material)) sheet cutting edge 114 ». reflective member (padding) 120, 220, 220a, 220b, 220c *** bottom surface of recess 123 »• bonding layer 130, 230, 230a, 230b, 230c *** side surface of recess 96/96 rear surface of base member light blocking member groove fluorescent material

权利要求:
Claims (16)
[0001]
1. Light-emitting device (100, 200, 100A, 200A, 300A, 400A) characterized by the fact that it comprises: a light-emitting element (104, 104A, 204A, 304A, 404A) that has a semiconductor layer (11, 21, 104b, 204b, 304b, 404b) and a transparent substrate (10, 20, 104a, 204a, 304a, 404a); a reflective member (114) which exposes at least part of the side surfaces and a top surface of the transparent substrate (10, 20, 104a, 204a, 304a, 404a) and which covers side surfaces of the semiconductor layer (11, 21, 104b , 204b, 304b, 404b), the reflective member comprising insulating filler particles; a light transmitting member (108) covering a part of the transparent substrate (10, 20, 104a, 204a, 304a, 404a) exposed from the reflective member (114), a base member; and, electrical conductive members arranged on the base member, on which the light-emitting element is mounted on the electrical conductive members, on a surface of the electrical conductive members, at least a portion of which does not have the light-emitting element mounted on it is covered with the insulating filler particles and the light transmitting member covers the light transmitting member, in which the light transmitting element is impregnated between the insulating filler particles.
[0002]
2. Light-emitting device according to claim 1, characterized in that the base member (101, 201) has a recess (109, 209, 209a, 209b, 209c) and the electrical conductive members are arranged in a bottom surface (120, 220, 220a, 220b, 220c) and side surfaces (130, 230, 230a, 230b, 230c) of the recess, and the light-emitting element (104, 104A, 204A, 304A, 404A) is mounted on the bottom surface of the recess (120, 220, 220a, 220b, 220c).
[0003]
3. Light-emitting device according to claim 2, characterized in that the side surfaces of the recess (130, 230, 230a, 230b, 230c) have, in a part that touches an edge surface of the top of the undercut (109, 209, 209a, 209b, 209c) a region where an electrically conductive member (102, 102a, 102b, 202a, 202b, 202c, 202d, 302, 402) is not formed.
[0004]
4. Light-emitting device according to claim 2, characterized in that the side surfaces of the recess (130, 230, 230a, 230b, 230c) in a part that touches the bottom surface of the recess (120, 220 , 220a, 220b, 220c) have a region where an electrically conductive member (102, 102a, 102b, 202a, 202b, 202c, 202d, 302, 402) is not formed.
[0005]
Light-emitting device according to any one of claims 2 to 4, characterized in that on an edge surface on the top side of the recess (109, 209, 209a, 209b, 209c), lateral surfaces of the recess (130, 230, 230a, 230b, 230c) have a step, and a side surface of the step has a region where an electrically conductive member (102, 102a, 102b, 202a, 202b, 202c, 202d, 302, 402) is not formed.
[0006]
6. Light-emitting device according to claim 5, characterized in that the shortest distance between a higher surface of the bottom surfaces of the step to a surface of the light transmitting member (108) is 1/5 or less with respect to the height of the recess (109, 209, 209a, 209b, 209c).
[0007]
Light-emitting device according to any one of claims 1 to 6, characterized in that the surface of the light-transmitting member (108) is recessed in shape.
[0008]
8. Light-emitting device according to any one of claims 1 to 7, characterized in that the insulating filler particles are applied to a thickness of 5 pm or greater.
[0009]
Light emitting device according to any one of claims 1 to 8, characterized in that the reflectance of the insulating filler particles is 50% or greater for light of an emission wavelength.
[0010]
10. Light-emitting device according to any one of claims 1 to 9, characterized in that the insulating filler particles cover a surface of the light-emitting element (104, 104A, 204A, 304A, 404A), and a surface area of a single light-emitting element (104, 104A, 204A, 304A, 404A) that is covered with the insulating filler particles is less than 50% of the entire surface area of the single light-emitting element (104, 104A, 204A, 304A, 404A).
[0011]
11. Light-emitting device according to any one of claims 1 to 10, characterized by the fact that the electrically conductive members have a positive electrode (14) and a negative electrode (16) respectively, the electrodes (14, 16) they are arranged apart from each other on the base member (101, 201), and the insulating filler particles are applied covering at least a part between the electrodes (14, 16).
[0012]
12. Light-emitting device according to claim 11, characterized in that the distance between the electrodes (14, 16) is 200 pm or less.
[0013]
13. Light-emitting device according to any one of claims 1 to 12, characterized in that the light-emitting element (104, 104A, 204A, 304A, 404A) is mounted in a connection insert assembly way direct (flipchip).
[0014]
14. Light-emitting device according to any one of claims 1 to 13, characterized in that a protective element (105) is mounted on the light-emitting device (100, 200, 100A, 200A, 300A, 400A), and 50% or more of the surface area of the protective element (105) is covered with insulating filler particles.
[0015]
Light-emitting device according to any one of claims 1 to 14, characterized in that at least a part of the insulating filler particles is covered with a light-blocking member (207).
[0016]
16. Light-emitting device according to claim 15, characterized in that the light-blocking member (207) covers the side walls of the base member (101,201).

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法律状态:
2019-01-08| B06F| Objections, documents and/or translations needed after an examination request according art. 34 industrial property law|

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2019-09-17| B06U| Preliminary requirement: requests with searches performed by other patent offices: suspension of the patent application procedure|

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2020-05-19| B09A| Decision: intention to grant|

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2020-10-13| B16A| Patent or certificate of addition of invention granted|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 28/01/2011, OBSERVADAS AS CONDICOES LEGAIS. |

优先权:

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申请号 | 申请日 | 专利标题

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JP2010026607|2010-02-09|

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JP2010-026607|2010-02-09|

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JP2010-044771|2010-03-01|

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JP2010044771|2010-03-01|

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JP2010-159434|2010-07-14|

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JP2010159434|2010-07-14|

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JP2010186504|2010-08-23|

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JP2010-186504|2010-08-23|

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PCT/JP2011/051742|WO2011099384A1|2010-02-09|2011-01-28|Light emitting device and method for manufacturing light emitting device|

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